JPH0336754A - Ic package and manufacture thereof - Google Patents
Ic package and manufacture thereofInfo
- Publication number
- JPH0336754A JPH0336754A JP1172157A JP17215789A JPH0336754A JP H0336754 A JPH0336754 A JP H0336754A JP 1172157 A JP1172157 A JP 1172157A JP 17215789 A JP17215789 A JP 17215789A JP H0336754 A JPH0336754 A JP H0336754A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- green sheet
- package
- base
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 238000005245 sintering Methods 0.000 claims abstract description 3
- 230000017525 heat dissipation Effects 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 9
- 239000000843 powder Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000000465 moulding Methods 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 4
- 239000002002 slurry Substances 0.000 abstract description 3
- 230000004075 alteration Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000005394 sealing glass Substances 0.000 description 2
- 241001182632 Akko Species 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 102220467129 Runt-related transcription factor 1_L13V_mutation Human genes 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、工０パッケージ、特にセラミック製のＩＣ
パッケージ及びその製造方法に関するものである。[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to an industrial package, especially a ceramic IC.
The present invention relates to a package and its manufacturing method.
Ｌ８工の集積度の増加や高速バイポーラロジックなどの
採用により半導体チップの発熱量が増大し、その冷却に
は多大の努力が払われている←空冷の場合には、第３図
に示す如く、ペース基板に熱伝導性レジンなどによＦ）
Ａｔ放熱フィンを取ジつけて熱抵抗を下げるのが一般的
である・第３図は従来より多用されているセラミック製
工０パッケージの一例として、Ａｔ放熱フィン付きパッ
ケージを示す断面図である。図にかいて、（１）は例え
ばＡｌの放熱フィン、（２）はＡｔフィン（１）トベー
スであるセラミック基板（３）を接着する熱伝導性シリ
コーンゴム、（３）はＬ１３Ｉを搭載するベースセラミ
ック基板、（４）はリードフレームを接着する封止ガラ
ス、（５）は半導体チップであるＬ８工であシ。Due to the increase in the degree of integration of L8 chips and the adoption of high-speed bipolar logic, etc., the amount of heat generated by semiconductor chips has increased, and great efforts are being made to cool them.In the case of air cooling, as shown in Figure 3, Using thermally conductive resin etc. on the paste boardF)
It is common to attach At heat radiating fins to lower the thermal resistance. Figure 3 is a sectional view showing a package with At heat radiating fins as an example of a ceramic package that has been widely used in the past. In the figure, (1) is, for example, an Al heat dissipation fin, (2) is a thermally conductive silicone rubber that adheres the ceramic substrate (3) to the At fin (1), and (3) is the base on which L13I is mounted. The ceramic substrate, (4) is the sealing glass to which the lead frame is bonded, and (5) is the L8 process which is the semiconductor chip.
（６）はＬ８工（５）をベース基板（３＞に接着するた
めの例えばムｕｗ８着剤、（７）はセラミックキャップ
、（８）は電気信号を外部へ取シ収すための金属性リー
ドフレーム、（９）はＬ８工（５）とリードフレーム（
８）トを電気的に結合させるためのワイヤである。この
ような構成のＩＣパッケージにかいて、ベース基板（３
）に高熱伝導性のセラミックを用りる場合には、放熱フ
ィン（１）ｆベース基板ｒ３）と一体的に作って、金属
性放熱フィンと同一効果を付与させることが考えられ、
ＳｉＣを材料とするものに対しては、初出。(6) is a muw8 adhesive for adhering the L8 process (5) to the base substrate (3), (7) is a ceramic cap, and (8) is a metal material for receiving electrical signals to the outside. Lead frame (9) is L8 construction (5) and lead frame (
8) A wire for electrically coupling the In an IC package with such a configuration, a base substrate (3
), if a highly thermally conductive ceramic is used, it may be possible to make it integrally with the heat dissipation fin (1) f base board r3) to provide the same effect as a metal heat dissipation fin.
This is the first time for products made from SiC.
菱田編「セラミック基板材料データ集」（サイエンス
フォーラム、填１７頁）などによって、ベースと放熱フ
ィンを一体にした構造が示されている。このように、ベ
ース基板（３）と放熱フィン（１）を一体化することに
よって１部品点数を減らし、ペース基板（３）と放熱部
品（１）を接着する工程が省略できるメリットがある。Edited by Hishida “Ceramic Substrate Material Data Collection” (Science
A structure in which the base and the heat dissipation fins are integrated has been shown in, for example, Forum, p. 17). In this way, by integrating the base substrate (3) and the heat dissipation fins (1), there is an advantage that the number of parts can be reduced and the step of bonding the pace board (3) and the heat dissipation component (1) can be omitted.
他方、もう一つの高熱伝導性セラミックである窒化アル
ミニウムについては、ベース基板（３）と放熱フィン（
１）の一体型構造は開示されていないｎｖ７！公昭６３
−１９５７４５号公報には窒化アルミニウムによシ放熱
フィンを形成することが示されているが。On the other hand, regarding aluminum nitride, which is another highly thermally conductive ceramic, the base substrate (3) and the heat dissipation fin (
1) The integral structure of nv7! is not disclosed. Kosho 63
Japanese Patent Application No. 195745 discloses that heat dissipation fins are formed from aluminum nitride.
放熱フィンがベース基板とは逆サイドに取シ付けて冷却
する構造となってＱｆｉ、Ｉ８工実装のように。The heat dissipation fin is installed on the opposite side of the base board for cooling, similar to Qfi and I8 mounting.
ワイヤボンデインクなどを必要とする素子には不都合で
ある０
〔発明が解決しようとする課題〕
従来の工０パッケージは以上のように！１４威されてか
り、上記ＳｉＯの場合の具体的な製造方法は明らかにさ
れていないが、ａｉｏｏ成形にはホットプレスが必要で
あることからすれば、形状が複雑になるに従い工Ｃパッ
ケージの製造が困難となシ。This is inconvenient for devices that require wire bonding ink, etc. [Problem to be solved by the invention] The conventional process-free package is as described above! 14, and the specific manufacturing method for the above-mentioned SiO has not been disclosed, but given that hot pressing is required for AIOO molding, it is said that as the shape becomes more complex, the manufacturing method of the C-package will increase. It is difficult.
コスト高になることが予想される〇
複雑形状のセラミックスを成形する一般的な方法として
射出成形が挙げられる。上記の例のような櫛形構造の場
合には、押し出し成形や鋳込み成形も可能である―しか
し射出成形や押し出し成形の場合は高価な金型やノズル
を必要とし、放熱フィン形状の変更に対応するには費用
が多くかかる。Injection molding is a common method for molding ceramics with complex shapes, which is expected to increase costs. In the case of a comb-shaped structure like the example above, extrusion molding or casting molding is also possible - however, injection molding or extrusion molding requires expensive molds and nozzles, and it is difficult to accommodate changes in the shape of the heat dissipation fins. costs a lot of money.
また、耐水性が悪く、底形が困難な窒化アルミニウム粉
末を対象としたとき、成形のための多くの制御因子の最
適条件を決定しなければならないが。In addition, when dealing with aluminum nitride powder, which has poor water resistance and is difficult to shape, it is necessary to determine the optimal conditions for many control factors for molding.
上記製造方法では多くの粉末が試料として必要であシ、
高価な粉末を多量に消費しなければならない０さらに、
これらの製造す法は有機結合剤の含有量が多いため、焼
成時の脱脂には多大の二ネＮギーと注意深い配慮が必要
となる□さらに、上記製造方法では１次段の焼成過程で
セラミックのメタライズが同時に施せないという問題点
があった０この発明は、上記のような問題点を解消する
ためになされたもので、大発熱量のチップ搭載が可能で
あう、パッケージ形状の変更に対応し易く。The above manufacturing method requires a large amount of powder as a sample;
In addition, large amounts of expensive powder must be consumed.
Since these manufacturing methods contain a large amount of organic binder, degreasing during firing requires a large amount of energy and careful consideration.Furthermore, in the above manufacturing methods, ceramics are removed during the first firing process. There was a problem that metallization could not be applied at the same time.0 This invention was made to solve the above problem, and it is compatible with changes in the package shape that would allow mounting of chips with a large heat output. Easy.
セラミックとメタＭの焼成が同時に可能な工０パッケー
ジ及びその製造方法を提供することを目的としている０
（Ｈ題を解決するための手段〕
この発明に係るＩＣパッケージＶ！、半導体チップ。It is an object of the present invention to provide a package capable of firing ceramic and meta-M at the same time, and a manufacturing method thereof. (Means for Solving Problem H) An IC package V! and a semiconductor chip according to the present invention.
この半導体チップを搭載するセラミック製のベース、及
びこのベースと一体化されたセラミック製の放熱フィン
を備え、ベース及び放熱フィンとなるセラミックはグリ
ーンシート成形可能であると共に常圧焼結可能なもので
あることを特徴とするものであるへ
また。この発明に係るＩＣパッケージの製造方法は、ベ
ースと放熱フィンをセラミックグリーンシート法によう
一体化して製造したものである０〔作用〕
この発明にかけるベースと放熱フィンは、グリーンシー
ト成形可能であると共に常圧焼結可能なセラミックによ
り、一体化してｔｌｌｄされてカシ。It has a ceramic base on which this semiconductor chip is mounted, and a ceramic heat dissipation fin integrated with this base.The ceramic that forms the base and heat dissipation fin can be formed into a green sheet and can be pressure-pressure sintered. Hemata, which is characterized by certain things. The method for manufacturing an IC package according to the present invention is to manufacture the base and the heat dissipating fins by integrating them using the ceramic green sheet method.0 [Function] The base and the heat dissipating fins according to the present invention can be formed into a green sheet. It is made of pressureless sinterable ceramic and is tlld together with oak.
セラミックグリーンシート法で製造可能であり。It can be manufactured using the ceramic green sheet method.
大箔熱量のチップ搭載が可能となる０また。このセラミ
ックグリーンシート法によれば、複雑な形状のセラミッ
クも成形でき、効率良く冷却できる構造の放熱フィンを
得ることが可能となる。It is also possible to mount a chip with large foil heat capacity. According to this ceramic green sheet method, it is possible to mold ceramics with complicated shapes, and it is possible to obtain heat dissipation fins with a structure that allows efficient cooling.
以下、この発明の一実施例を図について説明する０第１
図（ａ）〜（Ｃ）はこの発明の一実施例によるセラミッ
ク製の工０パッケージの製造方法を工程順に示す斜視図
である０図にかいて、（１０は放熱フィンとなる打ち抜
きグリーンシート、０は半導体チップを搭載するベース
となるグリーンシート、園はグリーンシート圓の裏面に
施したタングステンのメタル印刷面、Ｕはグリーンシー
ト積層体を切断するためのカッター、α鴇は放熱フィン
（１）と一体化したベースであるｎ
會ず、窒化アルミニウム粉末と酸化イットリウム、又は
酸化力〃シウムなどの焼結助剤と有機結合剤及び可塑剤
、溶剤から成るスラリーをドクターブレード法により成
形して厚さ１ｍｍ程度のグリーンシートを得た。このグ
リーンシートをパッケージ形状に応じて、収り扱い易い
大きさに切断した。次に＠１図（ＪＬ）に示すように、
グリーンシートに縞状の角穴を打ち抜き、この同じ穴あ
きシートαＯを例えば５枚準備し九〇一方、穿孔してい
ない別のグリーンシート（２）分用意し、別に準備した
タングステン粉末のメタライズペーストをグリーンシー
ト（２）の一方の面の所定位置にスクリーン印刷した。Hereinafter, one embodiment of the present invention will be explained with reference to the drawings.
Figures (a) to (C) are perspective views showing the manufacturing method of a ceramic package according to an embodiment of the present invention in the order of steps. 0 is the green sheet that is the base on which the semiconductor chip is mounted, Sono is the tungsten metal printing surface on the back of the green sheet circle, U is the cutter for cutting the green sheet laminate, and α is the heat dissipation fin (1) A slurry consisting of aluminum nitride powder, a sintering aid such as yttrium oxide or oxidizing oxidizer, an organic binder, a plasticizer, and a solvent is formed by a doctor blade method to form a thick base. A green sheet with a diameter of about 1 mm was obtained.This green sheet was cut into a size that was easy to fit and handle according to the package shape.Next, as shown in Figure @1 (JL),
Punch striped square holes in a green sheet and prepare, for example, five sheets of the same perforated sheet αO.Meanwhile, prepare another green sheet (2) without perforations, and metallize separately prepared tungsten powder. The paste was screen printed at a predetermined position on one side of the green sheet (2).
このメタル印刷面０１）裏面とし、その上に５枚のグリ
ーンシートα０を位置合せして置き、これを積層接着し
た＾この接着には、トルエン、アＭコー７１／類などの
スラリー用の溶剤又はテルピネオニＭなどの印刷ペース
ト用の溶剤を塗布するか。This metal printed surface 01) was used as the back surface, and 5 green sheets α0 were aligned and placed on top of it, and these were laminated and bonded. For this bonding, a solvent for slurry such as toluene and Akko 71/type was used. Or apply a printing paste solvent such as Terpineoni M.
別に準備した窒化アＭミニウム粉末のペーストを塗布し
、僅かに加圧すると効果的であった０次にこの積層物の
角穴の短片ｆｌｌｌ ｆ第１図（ｂ）に示すようにカッ
ター（２）で切断分離した０このような成形物を窒素雰
囲気中で１８５０℃で焼成することによう。Applying a paste of aluminum nitride powder prepared separately and applying slight pressure was effective. ) The molded product thus cut and separated was fired at 1850° C. in a nitrogen atmosphere.
断面が櫛形構造の、ベース基板（３）と放熱フィン（１
）が一体化した窒化アルミニウム焼結体α４が得られた
。この焼結体α４に、Ｎｉ−Ｆｅ合金のリードフレーム
と、別に作製したセラミックフレームを封着ガラスで接
合して、ペースと放熱フィンが一体化された工Ｃパッケ
ージを得た、
以上の製造方法によれば、放熱フィン付き窒化７〜ミニ
ウム焼結体が、いわばグリーンシートテクノロジーのみ
で得られる。従って汎用のシート成形機以外の装置は必
須でなく、シート厚さ、切断寸法の変更のみで形状の変
更に容易に対応できるｎまた窒化アルミニウム粉末１０
０ｇ８度であってもシート成形が可能であるため、高価
な粉末を多量に消費せずに条件決定ができる有利さがあ
る。A base substrate (3) and a heat dissipation fin (1) with a comb-shaped cross section.
) was obtained. An aluminum nitride sintered body α4 was obtained. A Ni-Fe alloy lead frame and a separately manufactured ceramic frame were bonded to this sintered body α4 using a sealing glass to obtain a C package in which the paste and heat dissipation fins were integrated.The above manufacturing method According to the publication, a sintered body of 7-minium nitride with heat dissipating fins can be obtained using only green sheet technology. Therefore, no equipment other than a general-purpose sheet forming machine is required, and the shape can be easily changed by simply changing the sheet thickness and cutting dimensions.In addition, aluminum nitride powder 10
Since sheet molding is possible even at 0 g and 8 degrees, there is an advantage that conditions can be determined without consuming large amounts of expensive powder.
以上は同一間隔、同一高さの放熱フィンを有するものに
ついて示したが、これに限るものではないＣ％ｓｇ２図
（ａ） 、 （ｂ）はそれぞれこの発明の他の実施例に
よる製造方法の工程途中のグリーンシート積層体を示す
断面図である。図にかいて、（２）は放熱フィンとなる
グリーンシート積層体である０この実施例では角穴の数
や位置を変更してカう。Although the above description has been made for the case where the radiation fins have the same spacing and the same height, the C%sg2 diagrams (a) and (b) are not limited to this, respectively. It is a sectional view showing a green sheet laminate in the middle. In the figure, (2) is a green sheet laminate that becomes a radiation fin. In this embodiment, the number and position of the square holes are changed.
半導体チップの発熱状況や放熱状態を考慮した放熱フィ
ンの高さ９幅などの部分的変更が可能である０
また、タングステンのメタライズ層は表面のみを想定し
たものであったが、ベースとなる部分のグリーンシート
（２）を複数枚使い、これらにタングステンの表面印刷
とヴイアホー〃を施せば、放熱フィン付き多層配線板が
可能であるＯさらに、枠状のグリーンシートを用いるこ
とによって、半導体チップを収納するキャビティをつく
ることができる。It is possible to partially change the height and width of the heat dissipation fin, taking into account the heat generation and heat dissipation conditions of the semiconductor chip.0 In addition, the tungsten metallized layer was intended only for the surface, but the base part By using multiple green sheets (2) and applying tungsten surface printing and via holes, it is possible to create a multilayer wiring board with heat dissipation fins.Furthermore, by using frame-shaped green sheets, semiconductor chips can be fabricated. You can create a cavity for storage.
！た。上記実施例では、熱伝ＩＪ！率が高く、放熱効果
の大きい窒化アルミニウムについて説明したが、セラミ
ック材料はこれに限定されるものでなく、アＭミナ、ム
ライトなどグリーンシート成形が可能で、常圧焼結でき
るものであれば適用できることは言う１でもないＯ
〔発明の効果〕
以上のように、この発明によれば、半導体チップ この
半導体チップを搭載するセラミック製のベース、及びこ
のペースと一体化されたセラミック製の放熱フィンを備
え、上記ベース及び放熱フィンとなるセラミックはグリ
ーンシート成形可能であると共に常圧焼結可能なもので
あることを特徴とすることによう、比較的簡便に製造で
きると共に、大発熱量のチップ搭載が可能である工Ｃパ
ッケージが得られる効果がある。! Ta. In the above example, Netsuden IJ! Although we have explained aluminum nitride, which has a high heat dissipation rate and has a large heat dissipation effect, ceramic materials are not limited to this, and any material that can be formed into a green sheet and can be sintered under pressure, such as amina or mullite, can be applied. [Effects of the Invention] As described above, according to the present invention, a semiconductor chip, a ceramic base on which the semiconductor chip is mounted, and a ceramic heat dissipation fin integrated with the pace. The ceramic that forms the base and heat dissipation fins can be formed into a green sheet and sintered under normal pressure, making it relatively easy to manufacture and equipped with a chip that generates a large amount of heat. This has the effect of providing an engineering C package that allows for.
また、ペースと放熱フィンをセラミックグリーンシート
法によう一体化して製造したことにより。In addition, the pace and heat dissipation fins are manufactured by integrating them using the ceramic green sheet method.
パッケージ形状の変更に対応し易く、セラミックとタン
グステンメタルの同時焼成が可能で、ドータＭ的に低コ
ストにできるＩＣパッケージの製造方法が得られる効果
がある。This has the effect of providing an IC package manufacturing method that is easily adaptable to changes in package shape, allows simultaneous firing of ceramic and tungsten metal, and can reduce costs in terms of daughter M.
第１図（ａ）〜（Ｃ）はこの発明の一実施例によるＩＣ
パッケージの製造方法を工程順に示す断面図、第２図（
ａ）、ω）はそれぞれこの発明の他の実施例による製造
す法の工程途中のグリーンシート積層体を示す断面図、
第３図Ｖｉ従来のＸａパッケージを示す断面図である、
（１）・・・放熱フィン５（３）・・・ベース、（５）
・・・半導体チップ、α０ 、 Ｃ１１ｌ・・・グリー
ンシート、（至）・・・グリーンシート ｆζｔ＃体。
なか１図中、同一符号は同一 又は相当部分を示す。FIGS. 1(a) to 1(C) show an IC according to an embodiment of the present invention.
Figure 2 is a cross-sectional view showing the package manufacturing method step by step.
a) and ω) are cross-sectional views showing green sheet laminates in the middle of the manufacturing process according to other embodiments of the present invention, respectively;
FIG. 3 is a cross-sectional view showing a conventional Xa package. (1)...radiating fin 5 (3)...base, (5)
...Semiconductor chip, α0, C11l...Green sheet, (to)...Green sheet fζt# body. Among the figures, the same reference numerals indicate the same or equivalent parts.
Claims (2)
ミック製のベース、及びこのベースと一体化されたセラ
ミック製の放熱フィンを備え、上記ベース及び放熱フィ
ンとなるセラミックはグリーンシート成形可能であると
共に常圧焼結可能なものであることを特徴とするＩＣパ
ッケージ。(1) A semiconductor chip, a ceramic base on which the semiconductor chip is mounted, and a ceramic heat dissipation fin integrated with the base, and the ceramic that forms the base and heat dissipation fin can be molded into a green sheet and is An IC package characterized by being capable of pressure sintering.
法により一体化して製造したＩＣパッケージの製造方法
。(2) A method for manufacturing an IC package in which a base and a heat dissipation fin are integrated by a ceramic green sheet method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1172157A JPH0336754A (en) | 1989-07-03 | 1989-07-03 | Ic package and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1172157A JPH0336754A (en) | 1989-07-03 | 1989-07-03 | Ic package and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0336754A true JPH0336754A (en) | 1991-02-18 |
Family
ID=15936627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1172157A Pending JPH0336754A (en) | 1989-07-03 | 1989-07-03 | Ic package and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0336754A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330483A (en) * | 1995-05-31 | 1996-12-13 | Seiko Seiki Co Ltd | Heat sink |
| US6967844B2 (en) * | 2003-08-29 | 2005-11-22 | Abc Taiwan Electronics Corp. | Ceramic heat sink with micro-pores structure |
| US20100089625A1 (en) * | 2007-04-24 | 2010-04-15 | Claus Peter Kluge | Component having a ceramic base with a metalized surface |
-
1989
- 1989-07-03 JP JP1172157A patent/JPH0336754A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08330483A (en) * | 1995-05-31 | 1996-12-13 | Seiko Seiki Co Ltd | Heat sink |
| US6967844B2 (en) * | 2003-08-29 | 2005-11-22 | Abc Taiwan Electronics Corp. | Ceramic heat sink with micro-pores structure |
| US20100089625A1 (en) * | 2007-04-24 | 2010-04-15 | Claus Peter Kluge | Component having a ceramic base with a metalized surface |
| US8980398B2 (en) * | 2007-04-24 | 2015-03-17 | CeramTee GmbH | Component having a ceramic base with a metalized surface |
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