JPH0334534A - Manufacture of phosphorus-doped ii-vi compound semiconductor - Google Patents
Manufacture of phosphorus-doped ii-vi compound semiconductorInfo
- Publication number
- JPH0334534A JPH0334534A JP1170113A JP17011389A JPH0334534A JP H0334534 A JPH0334534 A JP H0334534A JP 1170113 A JP1170113 A JP 1170113A JP 17011389 A JP17011389 A JP 17011389A JP H0334534 A JPH0334534 A JP H0334534A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- phosphorus
- doped
- molecular beam
- zinc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011701 zinc Substances 0.000 claims abstract description 17
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011574 phosphorus Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000011669 selenium Substances 0.000 claims abstract description 9
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 7
- 239000002994 raw material Substances 0.000 claims abstract description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 5
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- 229910021476 group 6 element Inorganic materials 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000006011 Zinc phosphide Substances 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- HOKBIQDJCNTWST-UHFFFAOYSA-N phosphanylidenezinc;zinc Chemical compound [Zn].[Zn]=P.[Zn]=P HOKBIQDJCNTWST-UHFFFAOYSA-N 0.000 claims 1
- 229910052717 sulfur Inorganic materials 0.000 claims 1
- 239000011593 sulfur Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 229940048462 zinc phosphide Drugs 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 13
- 239000010409 thin film Substances 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 abstract description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- OMSYGYSPFZQFFP-UHFFFAOYSA-J zinc pyrophosphate Chemical compound [Zn+2].[Zn+2].[O-]P([O-])(=O)OP([O-])([O-])=O OMSYGYSPFZQFFP-UHFFFAOYSA-J 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 150000003342 selenium Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は新しいオプトエレクトロニクス材料として期待
されるＩＩ−ＶＩ族化合物半導体に関し 特にｐ型伝導
を示す燐添加ＩＩ−ＶＩ族化合物半導体の製造方法に関
するものであも
従来の技術
ＩＩ−ＶＩ族化合物半導体は一部を除いてほとんど伝導
型を制御できなく、例えばテルル化亜鉛ではｐ型のへ
またセレン化亜鉛（ＺｎＳｅ）や硫化亜鉛（ＺｎＳ）で
はｎ型のみしか得られな賎 従って例えば 青色領域に
おける発光ダイオードやレーザーダイオードなどの発光
素子を構成する材料として有望であるＺｎ５ｅ半導体は
一般にｐ型伝導を示す結晶を得ることが難しく、その
ため高効率のｐｎ接合発光素子は実現していな賎一方従
ｉｐ型のＺｎ５ｅ半導体を得る試みとして、分子線エピ
タキシー法による結晶過程においてｐ型化のための不純
物として燐（Ｐ）が注目されていも その添加方法とし
ては固体燐を用いた方法負 二燐化三亜鉛（Ｚ ｎｓＰ
＊）を用いた方法が知られている（例えば ジャパニー
ズ ジャーナル オプ アプライド フィジックス 第
２５巻 第６殊 ８２１−８２７ページ、１９８６年）
。これ（友 真空中でＺｎ、Ｓｅおよび固体２ｎＳＰ２
をそれぞれ加熱蒸発させて基板上に燐添加Ｚｎ５ｅ結晶
薄膜を形成する方法であも発明が解決しようとする課題
しかしながら上述のような従来の方法でｃ上 固体燐
や固体Ｚ ｎ＊Ｐ＊を加熱蒸発していられるＰ４はＺｎ
５ｅ膜に対する付着係数が小さくほとんど取り込まれな
かったり、取り込まれても活性化しないためにｐ型Ｚｎ
５ｅを得ることは不可能であもまた固体Ｚｎ＊Ｐ＊を加
熱蒸発したときＰ４の他にＺｎ５Ｐａ型の分子線も生じ
も しかしこのＺｎ５Ｐ２分子はＺｎ５ｅ結晶にないＺ
ｎ原子並びを有していることや分子が大きいことのため
に有効に活性化する燐を十分にＺｎ５ｅ膜に添加するこ
とができなかった
本発明はかかる点に鑑みてなされたちの玄 燐を有効に
添加することによりｐ型伝導を示すＺｎ５ｅやＺｎＳ半
導体等のＩＩ−ＶＩ族化合物半導体を製造する方法を提
供することを目的としていも課題を解決するための手段
上記課題を解決するための本発明の技術的手段ｉ；Ｌ
ＩＩ−ＶＩ族化合物半導体を成長すると同時に二燐化
亜鉛または二燐化カドミウムを加熱蒸発して得られた成
分を照射もしくは輸送することにより燐添加ＩＩ−ＶＩ
族化合物半導体を作製するものであも例えば上述の分子
線エピタキシー法を用いた２ｎＳｅ半導体戒長において
（上 基板上に亜鉛（Ｚｎ）とセレン（Ｓｅ）のビーム
を照射すると同時に 二燐化亜鉛（ＺｎＰ＊）を加熱蒸
発により生じた成分を照射することにより、燐添加Ｚｎ
５ｅ半導体を作製するものであも
作用
固体ＺｎＰａを加熱蒸発して得られるＺｎＰａ型の成分
４１ ＶＩ族元素サイトにはいるべき燐原子がちょう
どＩＩ族元素である亜鉛原子と隣合っているた△ ＩＩ
−ＶＩ族化合物半導体結晶と原子並びが近くなり、燐が
アクセプタとして有効に取り込まれやすいことを発見し
ｔラ その結電 燐添加ＩＩ−ＶＩ族化合物半導体は
ｐ型伝導を示し１゜
実施例
本発明を実施例により説明すも
なお以下述べる本実施例ではＩＩ−ＶＩ族化合物半導体
の具体例としてまずセレン化亜鉛（ＺｎＳｅ）薄膜結晶
に燐（Ｐ）を添加する場合を取り上げｔもまた製造に用
いる装置は低温で結晶成長することのできる分子線エピ
タキシー装置または有機金属気相成長装置が適切であも
結晶成長の基板にはＺｎ５ｅと格子定数が近い砒化ガリ
ウム（ＧａＡｓ）を用いた なおＧａＡＳ基板は有機溶
剤で洗浄し 硫酸と過酸化水素水と水よりなるエツチン
グ液によって表面をエツチングした後に成長装置に導入
した
実施例１
第１図に本実施例で用いた分子線エピタキシー装置の概
念原理図を示も
分子線エピタキシー装置は真空排気装置１１を備えた真
空容器１２内に複数の分子線源２１、２２．２３と基板
支持機構（基板ホルダー１３）とシャッター１４を備え
た一種の真空蒸着装置であも まず原料となる高純度の
亜鉛（Ｚｎ）、 セレン（Ｓｅ）及び二燐化亜鉛（Ｚ
ｎ Ｐａ）をそれぞれ個別の分子線源２１．２２、２
３に充填すも 前述したように清浄にした基板１５を基
板ホルダー１３に第１図のごとく装着すも 第１図にお
いて、２１ａはＺｎ分子１ｉＬ ２２ａはＳｅ分子＄１
Ｌ ２３ａは固体ＺｎＰ象を加熱蒸発して得られる分
子線であも
次に 真空容器１２を超高真空に排気すも 導入された
ＧａＡｓ基板１５に６００ｔ、１０分間のサーマルエツ
チングを行い基板表面を清浄化すも そして基板１５を
ＩＩ−ＶＩ族化合物半導体の成長に適当な２００ｔから
５００ｔの範囲の温度に安走化させも 基板１５にＺｎ
分子線２１ａ、Ｓｅ分子線２２ａ及びＺｎＰ２分子線２
３ａを同時に照射することにより燐添加Ｚｎ５ｅ薄膜結
晶１６の形成することができｔら
実施例２
第２図に本実施例で用いた有機金属気相成長装置の概念
原理図を示も
有機金属気相成長装置は真空排気装置１１を備えた真空
容器１２内に複数の原料ガス導入バイブ３１、３２と基
板ホルダー１３より戒もま哄 原料となる高純度のＺｎ
（ＣｅＨｓ） ２（略称： ＤＥＺ）ガスと水素化
セレン（Ｈ２Ｓｅ）を水素で希釈しそれぞれパイプ３２
、３１から真空容器１２に供給すも またＺｎＰｇはル
ツボ３３に充填する。ＧａＡｓ基板１５は基板ホルダー
１３に第２図のごとく装着す、Ｌ３１ａはＨ２Ｓ ｅを
含むガスであり、 ３４はＺｎＰａの蒸発成分を含むＤ
ＥＺガスであａ このようにＺｎＰａの蒸発成分をＤＥ
Ｚガスで基板に輸送するの（よ ルツボ３３の穴付近で
Ｈ＝ＳｅとＺｎＰａが反応してＺｎ５ｅを形成しないよ
うにするためである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to II-VI group compound semiconductors that are expected to be used as new optoelectronic materials, and particularly relates to a method for producing phosphorus-doped II-VI group compound semiconductors exhibiting p-type conductivity. Amo Conventional technology Group II-VI compound semiconductors have almost no control over their conductivity type, with some exceptions; for example, zinc telluride has a p-type conduction type.
Furthermore, with zinc selenide (ZnSe) and zinc sulfide (ZnS), only n-type can be obtained. Therefore, for example, Zn5e semiconductor, which is a promising material for forming light-emitting devices such as light-emitting diodes and laser diodes in the blue region, is generally p-type. It is difficult to obtain a crystal that exhibits conduction, and as a result, a highly efficient p-n junction light emitting device has not been realized.On the other hand, in an attempt to obtain a conventional IP-type Zn5e semiconductor, a method for converting it to a p-type in the crystallization process using molecular beam epitaxy was used. Although phosphorus (P) is attracting attention as an impurity, the method of adding it is one using solid phosphorus.
*) is known (for example, Japanese Journal of Applied Physics, Vol. 25, No. 6, pp. 821-827, 1986).
. This (Friend) Zn, Se and solid 2nSP2 in vacuum
However, the problem to be solved by the invention is to form a phosphorous-doped Zn5e crystal thin film on a substrate by heating and evaporating each of them. P4 that can be evaporated is Zn
P-type Zn
It is impossible to obtain Zn5e, but when solid Zn*P* is heated and evaporated, Zn5Pa type molecular beams are also generated in addition to P4.
It was not possible to add enough phosphorus to the Zn5e film to effectively activate it due to the arrangement of n atoms and the large size of the molecule.The present invention was made in view of these points, and it is possible to add phosphorus to the Zn5e film. The purpose of this book is to provide a method for manufacturing II-VI group compound semiconductors, such as Zn5e and ZnS semiconductors, which exhibit p-type conductivity by effective doping. Technical means of invention i;L
Phosphorus is added to II-VI by irradiating or transporting the component obtained by heating and evaporating zinc diphosphate or cadmium diphosphide while growing a II-VI group compound semiconductor.
For example, when manufacturing a group compound semiconductor, for example, in a 2nSe semiconductor using the above-mentioned molecular beam epitaxy method (above), zinc diphosphate ( Phosphorus-added Zn
A ZnPa-type component 41 obtained by heating and evaporating a working solid ZnPa for producing a 5e semiconductor.The phosphorus atom that should be in the group VI element site is exactly adjacent to the zinc atom, which is a group II element. II
- It was discovered that the atomic arrangement becomes close to that of the VI group compound semiconductor crystal, and phosphorus is more likely to be effectively taken in as an acceptor.The phosphorus-doped II-VI group compound semiconductor exhibits p-type conduction; The invention will be explained by way of examples.In this example, which will be described below, we first take up the case where phosphorus (P) is added to zinc selenide (ZnSe) thin film crystal as a specific example of a II-VI group compound semiconductor. The appropriate equipment to use is a molecular beam epitaxy equipment or an organometallic vapor phase growth equipment that can grow crystals at low temperatures; however, gallium arsenide (GaAs), which has a lattice constant close to that of Zn5e, was used as the substrate for crystal growth. Example 1 Figure 1 shows the conceptual principle of the molecular beam epitaxy apparatus used in this example. The molecular beam epitaxy apparatus is a type of vacuum evaporation apparatus equipped with a plurality of molecular beam sources 21, 22, 23, a substrate support mechanism (substrate holder 13), and a shutter 14 in a vacuum chamber 12 equipped with a vacuum evacuation device 11. First, the raw materials, high-purity zinc (Zn), selenium (Se), and zinc diphosphide (Z
n Pa) with individual molecular beam sources 21, 22, 2
3. The substrate 15 cleaned as described above is mounted on the substrate holder 13 as shown in FIG. 1. In FIG.
L 23a is a molecular beam obtained by heating and evaporating a solid ZnP particle.Next, the vacuum chamber 12 is evacuated to an ultra-high vacuum, and the introduced GaAs substrate 15 is thermally etched at 600 tons for 10 minutes to coat the substrate surface. After cleaning, the substrate 15 is heated to a temperature in the range of 200 t to 500 t, which is suitable for the growth of II-VI group compound semiconductors.
Molecular beam 21a, Se molecular beam 22a and ZnP2 molecular beam 2
A phosphorous-doped Zn5e thin film crystal 16 can be formed by simultaneous irradiation with phosphorus-doped Zn5e. The phase growth apparatus is a vacuum container 12 equipped with a vacuum evacuation device 11, in which a plurality of raw material gas introduction vibes 31, 32 and a substrate holder 13 are used to introduce high-purity Zn as a raw material.
(CeHs) 2 (abbreviation: DEZ) gas and hydrogenated selenium (H2Se) are diluted with hydrogen and each pipe 32
, 31 to the vacuum container 12, and the crucible 33 is filled with ZnPg. The GaAs substrate 15 is mounted on the substrate holder 13 as shown in FIG.
In this way, the evaporated components of ZnPa are DE
This is to prevent H=Se and ZnPa from reacting near the hole of the crucible 33 to form Zn5e.
次に 真空容器１２を超高真空に排気すも 導入された
ＧａＡｓ基板１５に６００ｔ、 １０分間のサーマル
エツチングを行い基板表面を清浄化すも そして基板１
５をＩＩ−ＶＩ族化合物半導体の成長に適当な２００℃
から５００℃の範囲の温度に安定化させ＆ Ｖ１元素
とＩＩ族元素の供給モル比（ＶＩ／ＩＩ）を５０程度に
保ちなが板 真空容器１２内の圧力が０．３Ｔｏｒｒ程
度になるように原料を基板１５に照射し 燐添加Ｚｎ５
ｅ薄膜結晶１６を形成することができｔら
以上 第１図及び第２図に基づいて説明したように分子
線エピタキシー法や有機金属気相成長法を用いて燐添加
Ｚｎ５ｅ薄膜結晶を作製することができた このように
ＺｎＰ２を利用して得られた燐添加Ｚｎ５ｅ薄膜結晶（
友 ホールを供給するアクセプタとして燐を十分取り込
んでいｔも以上に述べた実施例は燐添加Ｚｎ５ｅを作製
するものであるＩＪ＜、 ＺｎｕＣｄｗＴｅｘＳｅｙ
Ｓｚ （Ｖ＋Ｗ＝１．Ｘ＋Ｙ＋Ｚ＝１）の組成を有す
る２元結晶から５元の混晶に至るＩＩ−ＶＩ族化合物半
導体またはそれらＩＩ−ＶＩ族化合物半導体の超格子に
おいてＺｎＰ２またはＣａＦ２を利用した燐添加をする
事ができた ただしＺｎを含むＩＩ−ＶＩ族化合物半導
体においてはＺｎＰ２を使用り、、Ｃｄを含む場合はＣ
ａＦ２を、ＺｎとＣｄ両方を含む場合はＺｎＰｅとＣｄ
Ｐｇのいずれを用いてもよ（１
このような手段によってＩＩ−ＶＩ族化合物半導体中の
燐はホールを供給するアクセプタとして十分な量取り込
まれてい九
またこのようなＺｎｕＣｄＩＩＴｅ×５ｅＹＳ２ （ｖ
＋Ｗ＝１．Ｘ＋Ｙ＋Ｚ＝１）の組成を有する２元結晶か
ら５元の混晶に至るｕ−ＶＩ族化合物半導体またはそれ
らＩＩ−ＶＩ族化合物半導体の超格子は硫化亜鉛または
セレン化亜鉛またはテルル化亜鉛または硫化カドミウム
またはセレン化カドミウムまたはテルル化カドミウムを
組み合わせたり、それらの元素単体と組み合わせても作
製可能であも発明の効果
以上述べたように 本発明はＩＩ族元素もしくはＶＩ族
元素の内少なくとも１種含む化合物半導体を形成する際
に 二燐化亜鉛もしくは二燐化カドミウムを基板上に照
射または輸送したことによって、アクセプタとして活性
化する燐を十分に添加したＩＩ−ＶＩ族化合物半導体を
得ることができ、従来困難であったｐ型伝導が実現され
も その結電 高効率のｐｎ接合発光素子が実現でき、
実用的にきわめて有用であもNext, the vacuum chamber 12 was evacuated to an ultra-high vacuum, and the introduced GaAs substrate 15 was thermally etched at 600 tons for 10 minutes to clean the surface of the substrate.
5 at 200°C, which is suitable for the growth of II-VI group compound semiconductors.
to 500° C. and keep the supply molar ratio (VI/II) of V1 element and Group II element at about 50, while maintaining the pressure inside the vacuum vessel 12 at about 0.3 Torr. The raw material is irradiated onto the substrate 15 to form phosphorus-added Zn5.
As explained based on FIGS. 1 and 2, a phosphorus-doped Zn5e thin film crystal can be formed using a molecular beam epitaxy method or an organometallic vapor phase epitaxy method. The phosphorus-doped Zn5e thin film crystal (
The above-mentioned example is for preparing phosphorus-doped Zn5e with sufficient incorporation of phosphorus as an acceptor to supply the holes.
Sz (V + W = 1. However, for II-VI group compound semiconductors containing Zn, ZnP2 is used, and when Cd is included, C is used.
If aF2 contains both Zn and Cd, ZnPe and Cd
Either Pg (1) By such means, a sufficient amount of phosphorus is incorporated into the II-VI group compound semiconductor as an acceptor that supplies holes.
+W=1. The superlattice of u-VI group compound semiconductors ranging from binary crystals to quinary mixed crystals or those II-VI group compound semiconductors having the composition of Alternatively, it can be produced by combining cadmium selenide or cadmium telluride, or by combining these elements alone, but the effects of the invention As stated above, the present invention provides a compound containing at least one group II element or group VI element. By irradiating or transporting zinc diphosphide or cadmium diphosphide onto a substrate when forming a semiconductor, it is possible to obtain a II-VI group compound semiconductor sufficiently doped with phosphorus, which is activated as an acceptor. Even if p-type conduction, which was difficult to achieve, was achieved, high-efficiency p-n junction light emitting devices could be realized.
Although it is extremely useful in practical terms.
第１図は本発明の実施例１で用いた分子線エピタキシー
装置を用いた燐添加Ｚｎ５ｅ半導体の作製を示す概略原
理阻 第２図は本発明の実施例２で用いた有機金属気相
成長装置を用いた燐添加２ｎＳｅ半導体の作製を示す概
略原理図であも１１・・・真空排気装置 １２・・・真
空容銖１３・・・基板ホルダー、 １４・・・シャッタ
ー、１５・・・基板 １６・ ・Ｚｎ５ｅ薄膜結晶２１
．２２．２３・ ・分子線温 ２１ａ・・Ｚｎ分子ＩＬ
２２ａ・・・Ｓｅ分子撒 ２３ａ・・・ＺｎＰａ分子
［３１，３２・・・原料ガス導入バイス ３１ａ
ルツベ ３４・・
スFig. 1 shows a schematic principle of manufacturing a phosphorous-doped Zn5e semiconductor using the molecular beam epitaxy apparatus used in Example 1 of the present invention. Fig. 2 shows the organometallic vapor phase epitaxy apparatus used in Example 2 of the present invention. This is a schematic principle diagram showing the production of a phosphorous-doped 2nSe semiconductor using 11... Vacuum exhaust device 12... Vacuum chamber 13... Substrate holder, 14... Shutter, 15... Substrate 16・ ・Zn5e thin film crystal 21
．． 22.23・・Molecular beam temperature 21a・・Zn molecule IL
22a... Se molecules spray 23a... ZnPa molecules [31, 32... Raw material gas introduction vice 31a Rutbe 34... S
Claims (4)
含む物質、または I I −Ｖ I 族化合物を主原料とし
て含む物質を基板上に I I −Ｖ I 族化合物半導体を
形成する状態において、二燐化亜鉛または二燐化カドミ
ウムを前記基板上に照射または輸送することによって燐
を添加することを特徴とする、燐添加 I I −Ｖ I 族
化合物半導体の製造方法。(1) A substance containing a Group II element, a substance containing a Group VI element, or a substance containing a Group II-VI compound as a main raw material is used to form a Group II-VI compound semiconductor on a substrate. A method for producing a phosphorus-doped II-VI compound semiconductor, characterized in that phosphorus is added by irradiating or transporting zinc phosphide or cadmium diphosphide onto the substrate.
れか一つ以上を用いた特許請求の範囲第一項記載の燐添
加 I I −Ｖ I 族化合物半導体の製造方法。(2) A method for producing a phosphorus-doped II-VI group compound semiconductor according to claim 1, in which at least one of zinc or cadmium is used as the group II element.
ルのいずれか一つ以上を用いた特許請求の範囲第一項記
載の燐添加 I I −Ｖ I 族化合物半導体の製造方法。(3) A method for producing a phosphorus-doped II-VI group compound semiconductor according to claim 1, in which one or more of sulfur, selenium, or tellurium is used as the VI element.
レン化亜鉛またはテルル化亜鉛または硫化カドミウムま
たはセレン化カドミウムまたはテルル化カドミウムのい
ずれか一つ以上を用いた特許請求の範囲第一項記載の
I I −Ｖ I 族化合物半導体の製造方法。(4) The claim described in claim 1 in which one or more of zinc sulfide, zinc selenide, zinc telluride, cadmium sulfide, cadmium selenide, or cadmium telluride is used as the II-V I group compound.
II-V Method for manufacturing a group I compound semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170113A JPH0334534A (en) | 1989-06-30 | 1989-06-30 | Manufacture of phosphorus-doped ii-vi compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1170113A JPH0334534A (en) | 1989-06-30 | 1989-06-30 | Manufacture of phosphorus-doped ii-vi compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0334534A true JPH0334534A (en) | 1991-02-14 |
Family
ID=15898881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1170113A Pending JPH0334534A (en) | 1989-06-30 | 1989-06-30 | Manufacture of phosphorus-doped ii-vi compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0334534A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872022A (en) * | 1994-09-02 | 1999-02-16 | Mitsubishi Denki Kabushiki Kaisha | Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser |
| EP1189290A1 (en) * | 2000-09-13 | 2002-03-20 | Director-General Of National Institute Of Advanced Industrial Science And Technology | Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same |
-
1989
- 1989-06-30 JP JP1170113A patent/JPH0334534A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872022A (en) * | 1994-09-02 | 1999-02-16 | Mitsubishi Denki Kabushiki Kaisha | Method for etching a semiconductor method for fabricating semiconductor device method for fabricating semiconductor laser and semiconductor laser |
| EP1189290A1 (en) * | 2000-09-13 | 2002-03-20 | Director-General Of National Institute Of Advanced Industrial Science And Technology | Semiconductor device having ZnO based oxide semiconductor layer and method of manufacturing the same |
| JP2002094114A (en) * | 2000-09-13 | 2002-03-29 | National Institute Of Advanced Industrial & Technology | SEMICONDUCTOR DEVICE COMPRISING ZnO-BASED OXIDE SEMICONDUCTOR LAYER AND ITS FABRICATING METHOD |
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