JPH03285321A - Solid electrolytic capacitor - Google Patents
Solid electrolytic capacitorInfo
- Publication number
- JPH03285321A JPH03285321A JP8792690A JP8792690A JPH03285321A JP H03285321 A JPH03285321 A JP H03285321A JP 8792690 A JP8792690 A JP 8792690A JP 8792690 A JP8792690 A JP 8792690A JP H03285321 A JPH03285321 A JP H03285321A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- film
- dielectric film
- electrolyte
- sulfuric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 31
- 239000007787 solid Substances 0.000 title claims abstract description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 13
- 229920000128 polypyrrole Polymers 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 2
- 229920000123 polythiophene Polymers 0.000 claims abstract 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 239000003792 electrolyte Substances 0.000 abstract description 6
- 239000011888 foil Substances 0.000 abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000008151 electrolyte solution Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 229910052799 carbon Inorganic materials 0.000 abstract description 3
- 239000010439 graphite Substances 0.000 abstract description 3
- 229910002804 graphite Inorganic materials 0.000 abstract description 3
- 230000000379 polymerizing effect Effects 0.000 abstract description 2
- 239000000178 monomer Substances 0.000 abstract 1
- 239000002120 nanofilm Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 8
- 238000007743 anodising Methods 0.000 description 7
- 229920001940 conductive polymer Polymers 0.000 description 6
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000003115 supporting electrolyte Substances 0.000 description 5
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 230000000977 initiatory effect Effects 0.000 description 3
- 239000011244 liquid electrolyte Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- -1 TCNQ salt Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- NHQVTOYJPBRYNG-UHFFFAOYSA-M sodium;2,4,7-tri(propan-2-yl)naphthalene-1-sulfonate Chemical compound [Na+].CC(C)C1=CC(C(C)C)=C(S([O-])(=O)=O)C2=CC(C(C)C)=CC=C21 NHQVTOYJPBRYNG-UHFFFAOYSA-M 0.000 description 2
- QICLCANLYBJHCF-UHFFFAOYSA-N sodium;tetrabutylazanium Chemical compound [Na+].CCCC[N+](CCCC)(CCCC)CCCC QICLCANLYBJHCF-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229930192474 thiophene Natural products 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical class CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical compound CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電解質として固体電解質を用いた固体ＫＭコン
デンサに関するものでアル。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a solid KM capacitor using a solid electrolyte as an electrolyte.
従来の技術
近年、電気機器のデジタル化にともない、そこで使用さ
れるコンデンサは小型大容量で高周波領域においてのイ
ンピーダンスが低いものが要求されている。このような
中、導電性固体を電解質として用いた固体電解コンデン
サの開発が盛んである。2. Description of the Related Art In recent years, with the digitalization of electrical equipment, capacitors used therein are required to be small, large in capacity, and have low impedance in a high frequency range. Under these circumstances, solid electrolytic capacitors using conductive solids as electrolytes are being actively developed.
従来、固体電解質としては二酸化マンガンが用いられて
きたが、二酸化マンガンの抵抗が高いために高周波領域
で十分低いインピーダンスを得ることはできなかった。Conventionally, manganese dioxide has been used as a solid electrolyte, but due to the high resistance of manganese dioxide, it has not been possible to obtain sufficiently low impedance in the high frequency range.
これに対し、導電性が高く陽極酸化性の優れた有機半導
体、７．７．８．８゜デトラノアノキノジメタンコンブ
レノクス塩（以下ＴＣＮＱ塩と略す）を固体電解質とし
て用いることが提案されている（特開昭５６−１０７７
７号公報）。このよりなＴＣＮＱ塩を用いた固体電解コ
ンデンサでは、周波数特性及び温度特性が著しく改善さ
れ低い漏れ電流特性も達成されている。さらに最近では
、ビロール、チオフェンなどの複素環式化合物上ツマ−
を支持電解質を用いて電解重合することにより、支持電
解質のアニオンをドーパントとして含む高導電性高分子
を陽極体上に形成し、これを電解質として用いる固体電
解コンデンサが提案されている（特開昭６０−３７１］
／１号公報）。また、導電性高分子の電解型合力法とじ
ては誘電体皮膜上に金属または導電性を有する金属化合
物を付着させた後、重合開始電極を前記金属または金属
酸化物に近接させ電解重合により導電性高分子を形成す
る固体電解コンデンサの製造方法が提案されている（特
開昭６４−３２６１９号公報あ発明が解決しようとする
課題
しかしながら、固体電解質は陽極酸化性が液体電解質よ
り劣り誘電体皮膜の修復能力が低いため、固体電解質を
用いて作製したコンデンサの耐電圧は一般に液体電解質
を用いた場合に比べかなり低くなってしまうという欠点
がある。このため、固体電解質で誘電体皮膜を被覆する
前に良質な誘電体皮膜を形成しておく必要がある。なお
、電解重合で形成した導電性高分子を固体電解してとし
て使う場合には、電解重合中に酸化皮膜が腐食されるこ
とがあり良質な誘電体皮膜を形成しておく必要性が特に
大きい。さらに、陽極弁金属の端面などは他の部分と同
様な良質な誘電体皮膜を形成することか困難であり、こ
のような部分が弱点となりコンデンサの漏れ電流を大き
くし耐圧を低下させてしまうという欠点がある。In response, it has been proposed to use 7.7.8.8° detranoanoquinodimethane comblenox salt (hereinafter abbreviated as TCNQ salt), an organic semiconductor with high conductivity and excellent anodic oxidability, as a solid electrolyte. (Unexamined Japanese Patent Publication No. 56-1077)
Publication No. 7). A solid electrolytic capacitor using this solid TCNQ salt has significantly improved frequency characteristics and temperature characteristics, and has also achieved low leakage current characteristics. More recently, virol, thiophene, and other compounds have been studied.
A solid electrolytic capacitor has been proposed in which a highly conductive polymer containing the anion of the supporting electrolyte as a dopant is formed on the anode body by electrolytically polymerizing it using a supporting electrolyte, and this is used as the electrolyte (Japanese Patent Application Laid-Open No. 60-371]
/No.1 Publication). In addition, in the electrolytic resultant method for conductive polymers, a metal or a conductive metal compound is deposited on a dielectric film, and then a polymerization initiating electrode is brought close to the metal or metal oxide to conduct electrolytic polymerization. A method for manufacturing a solid electrolytic capacitor in which a liquid electrolyte is formed has been proposed (Japanese Unexamined Patent Publication No. Sho 64-32619. Problems to be Solved by the Invention) However, solid electrolytes have inferior anodic oxidation properties compared to liquid electrolytes, and a dielectric film cannot be formed. Due to the low repair ability of solid electrolytes, the withstand voltage of capacitors made using solid electrolytes is generally much lower than when using liquid electrolytes.For this reason, the dielectric film is coated with a solid electrolyte. It is necessary to form a high-quality dielectric film beforehand.If a conductive polymer formed by electrolytic polymerization is used as a solid electrolyte, the oxide film may be corroded during electrolytic polymerization. It is particularly important to form a high-quality dielectric film on the end face of the anode valve metal.Furthermore, it is difficult to form a high-quality dielectric film on the end face of the anode valve metal. This has the disadvantage of increasing the leakage current of the capacitor and lowering the withstand voltage.
本発明では、上記の課題を解決し耐電圧の高い固体電解
コンデンサを提供することを目的としている。The present invention aims to solve the above problems and provide a solid electrolytic capacitor with high withstand voltage.
課題を解決するための手段
この目的を達成するために本発明の固体電解コンデンサ
では、硫酸溶液中で陽極弁金属を陽極酸化して形成した
誘電体皮膜を設けることを特徴としている。Means for Solving the Problems In order to achieve this object, the solid electrolytic capacitor of the present invention is characterized in that it is provided with a dielectric film formed by anodizing the anode valve metal in a sulfuric acid solution.
作 用
本発明では、硫酸溶液中で陽極弁金属を陽極酸化して形
成した誘電体皮膜を設けることを特徴としている。硫酸
溶液は強酸であるため陽極弁金属上の不純物を溶解し欠
陥の原因となるものを取り除く作用がある。そのため、
陽極弁金属上に良質な誘電体皮膜を均一に作製すること
が可能となる。Function The present invention is characterized by providing a dielectric film formed by anodizing the anode valve metal in a sulfuric acid solution. Since the sulfuric acid solution is a strong acid, it has the effect of dissolving impurities on the anode valve metal and removing those that cause defects. Therefore,
It becomes possible to uniformly produce a high quality dielectric film on the anode valve metal.
さらに、硫酸溶液中で陽極酸化して形成する誘電体皮膜
は電圧を印加する限り成長するため、端面のように誘電
体皮膜が形成しにくいところにも良質な誘電体皮膜を被
覆することが可能となる。なお、硫酸溶液中で陽極酸化
して誘電体皮膜を形成した後に中性の化成液中で陽極酸
化することにより、硫酸溶液中で陽極酸化して形成した
誘電体皮膜を設ける効果が大きくなることも明らかＫな
った。Furthermore, since the dielectric film formed by anodic oxidation in a sulfuric acid solution grows as long as voltage is applied, it is possible to coat areas where it is difficult to form a dielectric film, such as end faces, with a high-quality dielectric film. becomes. Note that by anodizing in a sulfuric acid solution to form a dielectric film and then anodizing in a neutral chemical solution, the effect of forming the dielectric film formed by anodizing in a sulfuric acid solution will be greater. It was clearly K.
以上のことより、良質な誘電体皮膜で陽極金属全面を被
覆することができ固体電解質を用いても、漏れ電流が小
さく耐電圧の高い優れたコンデンサを作製することが可
能となる。From the above, it is possible to cover the entire surface of the anode metal with a high-quality dielectric film, and even with the use of a solid electrolyte, it is possible to manufacture an excellent capacitor with low leakage current and high withstand voltage.
実施例 以下本発明の実施例について説明する。Example Examples of the present invention will be described below.
この発明では、具体的には、以下のようにして固体電解
コンデンサを作る。Specifically, in this invention, a solid electrolytic capacitor is manufactured as follows.
まず、図において陽極リード１付の弁金属筋２表面に硫
酸溶液を用いた陽極酸化を施すことにより、第１図にみ
るように、誘電体皮膜３である化成膜を形成し、ついで
、同皮膜３にマンガン酸化物層４を積層しておいてから
、重合性上ツマ−と支持電解質を含む電解液中に浸漬し
、マンガン酸化物層４の表面に電解重合導電性高分子膜
５を積層形成する。First, as shown in FIG. 1, the surface of the valve metal wire 2 with the anode lead 1 is anodized using a sulfuric acid solution to form a chemical film, which is the dielectric film 3, and then, After a manganese oxide layer 4 is laminated on the same film 3, it is immersed in an electrolytic solution containing a polymerizable upper layer and a supporting electrolyte, and an electropolymerized conductive polymer film 5 is placed on the surface of the manganese oxide layer 4. Laminated and formed.
電解重合導電性高分子膜５を積層形成し、ついで、カー
ボンペーストによるグラファイト層（他力の電極）６、
銀ペースト層（他力の電極）７を積層形成してから、陰
極リード８を半田９で付ければ、固体電解コンデンサの
完成である。なお、弁金属筋２が一力の電極であること
はいう１でもない。An electropolymerized conductive polymer film 5 is laminated, and then a graphite layer (an external electrode) 6 of carbon paste is formed.
After laminating a silver paste layer (an external electrode) 7, a cathode lead 8 is attached with solder 9, and the solid electrolytic capacitor is completed. In addition, it is not the case that the valve metal muscle 2 is a single force electrode.
次に本発明の実施例を更に詳しく述べる。Next, embodiments of the present invention will be described in more detail.
（実施例］）
かしめにより陽極リードをつけた７ＸＩＯｎ＋ｎ＋
のアノシミニウノＡ ｌ： ノ千ド箔を１５％硫酸水容
液を用い室温で２ ｍＡ ／ ］コの割合で定電流を印
加して陽極酸化により誘電体皮膜を形成させた。次に、
３チアジピン酸アンモニウム水溶液を用い約７０て゛で
７０ Ｖ印加して陽極酸化により誘電体皮膜を形成させ
た。その後、硝酸マンガン３０％水溶液に浸し自然乾燥
させた後２００℃で３０分加熱して熱分解二酸化マンガ
ンを付着させた。次にこの陽極箔をビロール（０５Ｍ）
、）リイソブロビルナフタレンスルホン酸ナトリウム（
０，１Ｍ ）と水からなる電解液に浸し、ポリピロール
で被覆した重合開始電極を陽極箔と接触させた後に、重
合開始電極に２ｍＡ／１コの割合で定電流を３０分間印
加してポリピロール電解重合膜を陽極箔上に形成させた
。水を用いて洗浄し乾燥後、電解重合膜上にカーボンペ
ーストと銀ペーストを順次塗布して陰極リードを取り出
してコンデンサを１０個作製した。(Example) 7XIOn+n+ with anode lead attached by caulking
Anoshimini Uno Al: Nosendo foil was anodized to form a dielectric film by applying a constant current at a rate of 2 mA/] at room temperature using a 15% sulfuric acid aqueous solution. next,
A dielectric film was formed by anodic oxidation using an aqueous solution of ammonium 3-thiadipate and applying 70 V at about 70°C. Thereafter, it was immersed in a 30% aqueous solution of manganese nitrate, air-dried, and then heated at 200° C. for 30 minutes to adhere pyrolytic manganese dioxide. Next, apply this anode foil to Viroll (05M).
,) Sodium lyisobrobynaphthalene sulfonate (
A polymerization initiating electrode coated with polypyrrole and immersed in an electrolytic solution consisting of 0.1 M) and water is brought into contact with an anode foil, and then a constant current of 2 mA/1 is applied to the polymerization initiating electrode for 30 minutes to perform polypyrrole electrolysis. A polymeric film was formed on the anode foil. After washing with water and drying, carbon paste and silver paste were sequentially applied onto the electropolymerized membrane, the cathode leads were taken out, and 10 capacitors were fabricated.
２０Ｖでエージングを行った後の、耐電圧の平均値は４
４７ｖであった。比較のため、硫酸水溶液による化成を
行わない以外は上記と同じ条件でコンデンサを１０個作
製した。この場合の耐電圧は３７．２Ｖ であり、本発
明によるコンデンサが優れていることが明かになった。After aging at 20V, the average value of withstand voltage is 4
It was 47v. For comparison, 10 capacitors were fabricated under the same conditions as above, except that chemical formation using an aqueous sulfuric acid solution was not performed. The withstand voltage in this case was 37.2V, which revealed that the capacitor according to the present invention was excellent.
なお、１２０Ｈ２における容量、１６Ｖ２分印加後の漏
れ電流の平均値は硫酸水溶液による化成の有無によらず
約５．５μＦ、００５μＡであり、硫酸水溶液による化
成が容量や漏れ電流の値に影響しないことも明らかにな
った。In addition, the average value of the capacitance at 120H2 and the leakage current after applying 16V for 2 minutes is approximately 5.5 μF and 0.05 μA regardless of the presence or absence of formation with the sulfuric acid aqueous solution, indicating that formation with the sulfuric acid aqueous solution does not affect the capacity or leakage current value. was also revealed.
（実施例２）
トリイソプロピルナフタレンスルホン酸ナトリウムに代
えてｎ−ブチルリン酸エステルを用いた以外は実施例１
と同様にしてコンデンサを作製した。２０ Ｖでエージ
ングを行った後の耐電圧の平均値は５０１■であった。(Example 2) Example 1 except that n-butyl phosphate was used in place of sodium triisopropylnaphthalene sulfonate.
A capacitor was fabricated in the same manner. The average value of the withstand voltage after aging at 20 V was 501 ■.
比較のために、硫酸水溶液による化成を行わない以外は
上記と同じ条件でコンデンサを１０個作製した。この場
合の、耐電圧の平均値Ｆｉ、４０．４Ｖであり、 本発
明によるコンデンサが優れていることが明かになった。For comparison, 10 capacitors were fabricated under the same conditions as above, except that chemical formation using an aqueous sulfuric acid solution was not performed. In this case, the average value of withstand voltage Fi was 40.4V, which revealed that the capacitor according to the present invention is excellent.
壕だ、硫酸水溶液による化成の有無によってコンデンサ
の容量や漏れ電流の値は影響されないことも確認された
。It was also confirmed that the capacitance and leakage current values of the capacitor were not affected by the presence or absence of chemical formation using an aqueous sulfuric acid solution.
（実施例３）
ビロール（０，５Ｍ）、）リイソブロビルナフタレンス
ルホン酸ナトリウム（０，１Ｍ ）と水からなる電解液
に代えて、チオフェン（０，５Ｍ ）、テトラブチルア
ンモニウムバラトルエン酸ナトリウム（０，１Ｍ ）と
アセトニトリルとからなる電解液を用いた以外は実施例
１と同様にしてコンデンサを作製した。２０ Ｖでエー
ジングを行った後の耐電圧の平均値ｔｒｉ ４５．７
Ｖであった。比較のために、硫酸水溶液による化成を行
わない以外は上記と同じ条件でコンデンサを１０個作製
した。この場合の、耐電圧の平均値は３７５ｖであり、
本発明によるコンデンサが優れていることが明かにな
った。(Example 3) Thiophene (0.5M), tetrabutylammonium sodium balatoluenate ( A capacitor was produced in the same manner as in Example 1 except that an electrolytic solution consisting of 0.1 M) and acetonitrile was used. Average value of withstand voltage after aging at 20 V tri 45.7
It was V. For comparison, 10 capacitors were fabricated under the same conditions as above, except that chemical formation using an aqueous sulfuric acid solution was not performed. In this case, the average value of withstand voltage is 375v,
It has become clear that the capacitor according to the invention is superior.
また、硫酸水溶液による化成の有無によってコンデンサ
の容量や漏れ電流の値は影響されないことも確認された
。It was also confirmed that the capacitance and leakage current value of the capacitor were not affected by the presence or absence of chemical formation using an aqueous sulfuric acid solution.
なお、本発明の特徴は硫酸溶液中で湯漬弁金属を陽極酸
化して形成した誘電体皮膜を設けることであり、その前
後に他の方法で化成を行ってもその効果はあり、本発明
はこのことによって限定されない。Note that the feature of the present invention is to provide a dielectric film formed by anodizing the immersion valve metal in a sulfuric acid solution, and the effect can be obtained even if chemical formation is performed by other methods before or after the anodization. It is not limited by this.
なお、実施例では電解質としてトリイソプロピルナフタ
レンスルホン酸ナトリウム、ｎ−ブチルリン酸エステル
及びテトラブチルアンモニウムバラトルエン酸ナトリウ
ムを用いた場合についてのみ述べたが、その他のもので
も良く、また支持電解質を混合して用いることもでき１
本発明は支持電解質の種類によって限定されない。さら
に、固体電解質を複合化するために重合電解液に添加物
を入れてもよく、このことによって本発明は限定されな
い。In addition, in the examples, only the case where sodium triisopropylnaphthalene sulfonate, n-butyl phosphate ester, and sodium tetrabutylammonium balatoluenate were used as the electrolyte was described, but other materials may be used, and supporting electrolytes may also be mixed. You can also use 1
The invention is not limited by the type of supporting electrolyte. Additionally, additives may be added to the polymerized electrolyte to compose the solid electrolyte, and the invention is not limited thereby.
発明の効果
以上のように本発明では、硫酸溶液中で陽極弁金属を陽
極酸化して形成した誘電体皮膜を設けることにより、漏
れ電流が小さく耐電圧が高いコンデンサを実現できると
いう利点を有する。Effects of the Invention As described above, the present invention has the advantage that by providing a dielectric film formed by anodizing the anode valve metal in a sulfuric acid solution, a capacitor with low leakage current and high withstand voltage can be realized.
図は、本発明の一実施例における固体電解コンデンサの
断面図である。
】 陽極リード、２・・弁金属箔、３・・・誘電体皮膜
、４ ・マンガン酸化物層、５・・・電解重合導電性高
分子膜、６ グラファイト層、７ 銀ペースト層、８
陰極リード、９・−半田。The figure is a sectional view of a solid electrolytic capacitor in one embodiment of the present invention. ] Anode lead, 2... Valve metal foil, 3... Dielectric film, 4 - Manganese oxide layer, 5... Electropolymerized conductive polymer film, 6 Graphite layer, 7 Silver paste layer, 8
Cathode lead, 9 - solder.
Claims (3)
固体電解質を具備することを特徴とする固体電解コンデ
ンサ。(1) A solid electrolytic capacitor characterized by comprising a solid electrolyte provided on an anode valve metal via a sulfuric acid conversion film.
である請求項１記載の固体電解コンデンサ。(2) The solid electrolytic capacitor according to claim 1, wherein the solid electrolyte is polypyrrole or polythiophene.
記載の固体電解コンデンサ。(3) Claim 1 in which aluminum is used as the anode valve metal
The solid electrolytic capacitor described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8792690A JPH03285321A (en) | 1990-04-02 | 1990-04-02 | Solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8792690A JPH03285321A (en) | 1990-04-02 | 1990-04-02 | Solid electrolytic capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03285321A true JPH03285321A (en) | 1991-12-16 |
Family
ID=13928526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8792690A Pending JPH03285321A (en) | 1990-04-02 | 1990-04-02 | Solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03285321A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729428A (en) * | 1995-04-25 | 1998-03-17 | Nec Corporation | Solid electrolytic capacitor with conductive polymer as solid electrolyte and method for fabricating the same |
| US6072694A (en) * | 1998-09-30 | 2000-06-06 | Kemet Electronics Corporation | Electrolytic capacitor with improved leakage and dissipation factor |
-
1990
- 1990-04-02 JP JP8792690A patent/JPH03285321A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729428A (en) * | 1995-04-25 | 1998-03-17 | Nec Corporation | Solid electrolytic capacitor with conductive polymer as solid electrolyte and method for fabricating the same |
| US6072694A (en) * | 1998-09-30 | 2000-06-06 | Kemet Electronics Corporation | Electrolytic capacitor with improved leakage and dissipation factor |
| US6191013B1 (en) | 1998-09-30 | 2001-02-20 | Kemet Electronics Corporation | Process for improving leakage and dissipation factor of solid electrolytic capacitors employing conductive polymer cathodes |
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