JP2811648B2 - Method for manufacturing solid electrolytic capacitor - Google Patents
Method for manufacturing solid electrolytic capacitorInfo
- Publication number
- JP2811648B2 JP2811648B2 JP27716991A JP27716991A JP2811648B2 JP 2811648 B2 JP2811648 B2 JP 2811648B2 JP 27716991 A JP27716991 A JP 27716991A JP 27716991 A JP27716991 A JP 27716991A JP 2811648 B2 JP2811648 B2 JP 2811648B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- voltage
- electrolytic capacitor
- solid electrolytic
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【０００１】[0001]
【産業上の利用分野】本発明は、導電性高分子膜を固体
電解質として用いた固体電解コンデンサの製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solid electrolytic capacitor using a conductive polymer film as a solid electrolyte.
【０００２】[0002]
【従来の技術】近年、小形高性能化の要請に応えた固体
電解コンデンサとして、特開昭６０−２４４０１７号公
報又は特開昭６３−１８１３０８号公報に開示されたも
のがある。2. Description of the Related Art In recent years, as a solid electrolytic capacitor which has responded to the demand for miniaturization and high performance, there is one disclosed in JP-A-60-244017 or JP-A-63-181308.
【０００３】これら公報に開示された技術は、表面を粗
面化した弁作用金属を化成し酸化皮膜を形成して得た陽
極体を陽極として電解液に浸漬して通電し、前記酸化皮
膜上に形成した電解重合膜を固体電解質として用いるも
のであるが、酸化皮膜が絶縁物であるため、陰極と効果
的な通電が行われず、酸化皮膜の欠陥部あるいは陰極と
の距離が近いところに電流が集中し、固体電解質として
の均一な電解重合膜を得ることが極めて困難であった。[0003] The technology disclosed in these publications is based on a method in which an anode body obtained by forming a valve action metal having a roughened surface and forming an oxide film is immersed in an electrolytic solution as an anode and energized to form a film on the oxide film. Although the electropolymerized film formed as above is used as a solid electrolyte, since the oxide film is an insulator, effective energization with the cathode is not performed, and current is applied to a defective portion of the oxide film or a place where the distance between the cathode and the cathode is short. And it was extremely difficult to obtain a uniform electrolytic polymerized film as a solid electrolyte.
【０００４】そのため、陽極体を例えばピロ−ル溶液に
浸漬し、しかる後、酸化剤溶液に浸漬することによる化
学酸化重合手段を講じ、陽極体上に予め化学重合膜を形
成し、この化学重合膜を陽極として電解液中で電解酸化
重合を行い、化学重合膜上に効果的に電解重合膜を形成
するようにしている。[0004] Therefore, the anode body is immersed in, for example, a pyrrole solution, and thereafter, a chemical oxidation polymerization means by immersing the anode body in an oxidizing agent solution is taken. Electrolytic oxidative polymerization is performed in an electrolytic solution using the film as an anode to effectively form an electrolytic polymerized film on the chemically polymerized film.
【０００５】しかしながら、酸化皮膜に欠陥があった場
合には、化学酸化重合の際に導電性の化学重合膜が直接
欠陥部に接触するため、ショ−ト不良の原因となってい
る。そのため、特開平２−２６０５１６号公報に開示さ
れているように、化学重合膜形成後に再化成処理を行う
方法がある。However, if the oxide film has a defect, the conductive chemically polymerized film comes into direct contact with the defective portion during chemical oxidative polymerization, which causes a short circuit. Therefore, as disclosed in Japanese Patent Application Laid-Open No. 2-260516, there is a method of performing a chemical conversion treatment after forming a chemically polymerized film.
【０００６】しかし、上述の通り欠陥部に導電性の化学
重合膜が直接接触しているため、非常に化成性が悪く、
逆に電流集中による酸化皮膜や化学重合膜の劣化を招く
場合もあり、一般に行われている再化成処理を化学重合
膜形成後に行なっても、耐圧不良，ショ−ト不良，ＬＣ
不良の抜本的対策には成り得なかった。However, as described above, since the conductive chemically polymerized film is in direct contact with the defective portion, the chemical conversion is very poor.
Conversely, the concentration of current may cause deterioration of the oxide film or the chemically polymerized film, and even if the re-chemical treatment generally performed after the formation of the chemical polymerized film is performed, the breakdown voltage, short circuit, LC
It could not be a drastic measure for failure.
【０００７】[0007]
【発明が解決しようとする課題】以上のような手段によ
って得られる固体電解コンデンサは、小形高性能化の要
請に応えたものとして注目に値するが、酸化皮膜に欠陥
部がある場合、ショ−ト不良，ＬＣ不良が生じるため、
製造過程において歩留りが非常に低くなってしまうとい
う問題をかかえていた。The solid electrolytic capacitor obtained by the above-mentioned means is worthy of attention as meeting the demand for small size and high performance. However, when the oxide film has a defective portion, it is short-circuited. Failure and LC failure
There is a problem that the yield is very low in the manufacturing process.
【０００８】本発明は、上記の点に鑑みてなされたもの
で、導電性高分子膜を固体電解質として用いた固体電解
コンデンサのショ−ト不良，ＬＣ不良などを防止できる
固体電解コンデンサの製造方法を提供することを目的と
するものである。The present invention has been made in view of the above points, and a method of manufacturing a solid electrolytic capacitor using a conductive polymer film as a solid electrolyte, which can prevent short defects, LC defects and the like of a solid electrolytic capacitor. The purpose is to provide.
【０００９】[0009]
【課題を解決するための手段】本発明の固体電解コンデ
ンサの製造方法は、弁作用金属に形成した酸化皮膜上に
化学酸化重合により化学重合膜を形成した後、この化学
重合膜上に電解酸化重合により電解重合膜を形成する固
体電解コンデンサの製造方法において、前記酸化皮膜上
に化学重合膜を形成したのち、化成液中で電流密度，印
加電圧をそれぞれ０．０５〜０．５Ａ／ｄｍ2 ，箔化成
電圧の１／２〜１倍に制御して電圧を印加することを特
徴とするものである。According to a method of manufacturing a solid electrolytic capacitor of the present invention, a chemically polymerized film is formed on an oxide film formed on a valve metal by chemical oxidation polymerization, and then the electrolytically oxidized film is formed on the chemically polymerized film. In the method for manufacturing a solid electrolytic capacitor in which an electrolytic polymerized film is formed by polymerization, after forming a chemically polymerized film on the oxide film, a current density and an applied voltage are respectively set to 0.05 to 0.5 A / dm 2 in a chemical conversion solution. The voltage is controlled by controlling the voltage to 1/2 to 1 times the foil formation voltage.
【００１０】[0010]
【作用】以上の構成によれば、妥当な電圧及び電流密度
で化学重合膜の再化成処理が行われるため、酸化皮膜欠
陥部の修復が非常にスム−ズに行われ、ショ−ト不良，
ＬＣ不良などが完全に防止できるとともに、耐電圧の格
段の向上を図ることができる。According to the above construction, the chemical polymerization film is re-formed at an appropriate voltage and current density, so that the oxide film defective portion can be repaired very smoothly, resulting in short-circuit failure and short-circuiting.
LC defects and the like can be completely prevented, and the withstand voltage can be significantly improved.
【００１１】なお、電流密度が０．５Ａ／ｄｍ2 以上及
び／又は電圧が箔化成電圧以上の範囲で化学酸化重合後
再化成を行った場合には、酸化皮膜欠陥部に電流が集中
し、箔表面の破壊・腐食がおこるとともに、箔表面の化
学重合膜が破壊され、耐圧，ＬＣをはじめ、ｔａｎδ，
ＥＳＲ，容量達成率など各特性がいずれも著しく悪化す
る。When re-formation is performed after chemical oxidation polymerization at a current density of 0.5 A / dm 2 or more and / or a voltage of foil formation voltage or more, current concentrates on the oxide film defect, The foil surface is destroyed and corroded, and the chemically polymerized film on the foil surface is destroyed.
Each of the characteristics such as the ESR and the capacity achievement rate is significantly deteriorated.
【００１２】また、逆に電流密度が０．０５Ａ／ｄｍ2
以下及び／又は電圧が箔化成電圧の１／２以下の範囲で
化学酸化重合後再化成を行った場合、ほとんど皮膜欠陥
部の修復が行われないため、ショ−ト不良，ＬＣ不良に
対する対策とはならない。Conversely, when the current density is 0.05 A / dm 2
When the chemical conversion is performed after the chemical oxidation polymerization in the range of less than or equal to 1/2 of the foil formation voltage, the film defective portion is hardly repaired. Not be.
【００１３】[0013]
【実施例】以下、本発明の一実施例につき説明する。す
なわち、エッチングによって表面積を拡大し化成工程を
行い表面に酸化皮膜を形成した、印加電圧５０Ｖで、例
えば高純度アルミニウムからなる陽極箔に陽極リ−ド線
を取着し、次に、この陽極箔をピロ−ル又はチオフェン
あるいはフラン／エタノ−ル水溶液に浸漬した後、更
に、支持電解質としてパラトルエンスルホン酸テトラエ
チルアンモニウムなどを含む過硫酸アンモニウム水溶液
に浸漬して化学酸化重合を施し、酸化皮膜上に導電性高
分子からなる化学重合膜を形成する。An embodiment of the present invention will be described below. That is, an anode lead wire is attached to an anode foil made of, for example, high-purity aluminum at an applied voltage of 50 V on which an oxide film has been formed by performing a chemical conversion step by enlarging the surface area by etching. Is immersed in an aqueous solution of pyrrole, thiophene, or furan / ethanol, and then further immersed in an aqueous solution of ammonium persulfate containing tetraethylammonium paratoluenesulfonate as a supporting electrolyte to perform chemical oxidative polymerization, thereby forming a conductive film on the oxide film. A chemically polymerized film made of a conductive polymer is formed.
【００１４】次に、この素子をアジピン酸アンモニウム
などを溶質とする化成液中に浸漬し、電流密度０．０５
〜０．５Ａ／ｄｍ2 ，化成電圧の１／２〜１倍の電圧を
印加することで効率的に皮膜欠陥部の再化成を行う。そ
して支持電解質及びピロ−ル，チオフェン，フランなど
のモノマ−を含む電解酸化重合液中に浸漬し電解酸化重
合を施し、化学重合膜上に導電性高分子からなる電解重
合膜を生成し、しかる後コロイダルカ−ボンに浸漬−銀
ペ−スト塗布して陰極層を設け、この陰極層の部分に陰
極リ−ドを取着し、最後に外装を施してなるものであ
る。Next, this device was immersed in a chemical conversion solution containing ammonium adipate or the like as a solute,
~0.5A / dm 2, efficiently performing reformation of the film defective part by applying the 1/2 to 1 times the voltage of the forming voltage. Then, it is immersed in an electrolytic oxidation polymerization solution containing a supporting electrolyte and a monomer such as pyrrole, thiophene, and furan, and subjected to electrolytic oxidation polymerization to form an electrolytic polymerization film made of a conductive polymer on the chemical polymerization film. Thereafter, a cathode layer is provided by immersion-silver paste coating on a colloidal carbon, a cathode lead is attached to the portion of the cathode layer, and finally an exterior is applied.
【００１５】以上の構成になる固体電解コンデンサの製
造方法によれば、適切な電圧及び電流密度で化学重合膜
形成後の再化成処理が行われるため、皮膜修復がスム−
ズに行われ、ショ−ト不良，ＬＣ不良などが完全に防止
できるとともに、本発明の範囲外で化学酸化重合後再化
成が行われた場合や、再化成が行われない場合に比して
格段に使用電圧の拡大を図ることができる。According to the method for manufacturing a solid electrolytic capacitor having the above-described structure, the chemical conversion treatment after the formation of the chemically polymerized film is performed at an appropriate voltage and current density.
In addition to short-circuiting, LC failure, and the like, it is possible to completely prevent short-circuiting, LC-defectiveness, and the like. The use voltage can be remarkably increased.
【００１６】なお、電流密度が０．５Ａ／ｄｍ2 以上及
び／又は電圧が箔化成電圧以上の範囲で化学酸化重合後
再化成を行った場合には、皮膜欠陥部に電流が集中し、
箔表面に腐食がおこるとともに、箔表面の化学重合膜が
破壊され、耐圧、ＬＣをはじめｔａｎδ，ＥＳＲ，容量
達成率など各特性がいずれも著しく悪化する。また、逆
に電流密度が０．０５Ａ／ｄｍ2 以下及び／又は電圧が
箔化成電圧の１／２以下の範囲で化学酸化重合後、再化
成を行った場合には、ほとんど皮膜欠陥部の修復が行わ
れないため、ショ−ト不良，ＬＣ不良に対する対策とは
ならない。When re-formation is performed after the chemical oxidation polymerization at a current density of 0.5 A / dm 2 or more and / or a voltage of the foil formation voltage or more, the current concentrates on the film defect portion,
Corrosion occurs on the foil surface, and the chemically polymerized film on the foil surface is destroyed, and all properties such as pressure resistance, LC, tan δ, ESR, and capacity achievement rate are significantly deteriorated. Conversely, when chemical conversion is carried out after the chemical oxidation polymerization at a current density of 0.05 A / dm 2 or less and / or a voltage of 1/2 or less of the foil formation voltage, almost the coating defect is repaired. Is not performed, so that it is not a countermeasure for short failure and LC failure.
【００１７】次に、印加電圧５０Ｖで化成を行い酸化皮
膜を形成したアルミニウムからなる陽極箔を用いた本発
明によって得られた固体電解コンデンサと、従来例によ
って得られた固体電解コンデンサの諸特性比較について
述べる。Next, a comparison of various characteristics between the solid electrolytic capacitor obtained by the present invention using the anode foil made of aluminum formed with an oxide film by forming at an applied voltage of 50 V and the solid electrolytic capacitor obtained by the conventional example. Is described.
【００１８】表１は、以下に記した実施例Ａ，従来例Ｂ
及び従来例Ｃによる定格１０Ｖ−３μＦの固体電解コン
デンサの諸特性を示すものである。Table 1 shows Example A and Conventional Example B described below.
9 shows various characteristics of a solid electrolytic capacitor rated at 10 V-3 μF according to Conventional Example C.
【００１９】なお、表中の数値でショ−ト不良を除いた
ものは、試料１００個の平均値で、（ ）内はバラツキ
を示す。実施例Ａ （１）化学酸化重合条件 ピロ−ルエタノ−ル溶液に化成処理したアルミニウム陽
極箔を５分間浸漬後、支持電解質としてトルエンスルホ
ン酸テトラエチルアンモニウム０．０５ｍｏｌ／ｌを含
む０．１ｍｏｌ／ｌ過硫酸アンモニウム水溶液に５分間
浸漬。 （２）電解酸化重合条件 ピロ−ルモノマ−１ｍｏｌ／ｌ及び支持電解質としてパ
ラトルエンスルホン酸ナトリウム１ｍｏｌ／ｌを含むア
セトニトリルからなる電解液中に浸漬し、定電流酸化重
合（１ｍＡ／ｃｍ2 ，３０分）を行う。 （３）化学酸化重合後再化成条件 ０．１５Ｍ−アジピン酸アンモニウム水溶液中で再化成
（０．１Ａ／ｄｍ2 ，３０Ｖ，１０分）を行う。従来例Ｂ （１）化学酸化重合条件 実施例Ａと同じ （２）電解酸化重合条件 実施例Ａと同じ （３）化学酸化重合後再化成条件 ０．１５Ｍ−アジピン酸アンモニウム水溶液中で再化成
（１Ａ／ｄｍ2 ，５０Ｖ，１０分）を行う。従来例Ｃ （１）化学酸化重合条件 実施例Ａと同じ （２）電解酸化重合条件 実施例Ａと同じ （３）化学酸化重合後再化成条件 ０．１５Ｍ−アジピン酸アンモニウム水溶液中で再化成
（０．０１Ａ／ｄｍ2 ，３０Ｖ，１０分）を行う。In addition, short defects were excluded from the numerical values in the table.
The values are the average values of 100 samples.
Is shown.Example A (1) Chemical oxidative polymerization conditions Aluminum oxide chemically converted to a pyrrole ethanol solution
After the electrode foil is immersed for 5 minutes, toluene sulfo is used as a supporting electrolyte.
Containing 0.05 mol / l of tetraethylammonium phosphate
5 minutes in 0.1 mol / l ammonium persulfate aqueous solution
Immersion. (2) Conditions for electrolytic oxidation polymerization Pyrrole monomer-1 mol / l and
A containing 1 mol / l sodium toluenesulfonate
Immerse in an electrolyte consisting of cetonitrile,
(1mA / cmTwo, 30 minutes). (3) Re-formation conditions after chemical oxidative polymerization Re-formation in 0.15 M ammonium adipate aqueous solution
(0.1 A / dmTwo, 30V, 10 minutes).Conventional example B (1) Chemical oxidation polymerization conditions Same as Example A (2) Electrolytic oxidation polymerization conditions Same as Example A (3) Rechemical formation conditions after chemical oxidation polymerization Rechemical formation in 0.15 M aqueous ammonium adipate solution
(1A / dmTwo, 50V, 10 minutes).Conventional example C (1) Chemical oxidation polymerization conditions Same as Example A (2) Electrolytic oxidation polymerization conditions Same as Example A (3) Rechemical formation conditions after chemical oxidation polymerization Rechemical formation in 0.15 M aqueous ammonium adipate solution
(0.01 A / dmTwo, 30V, 10 minutes).
【００２０】[0020]
【表１】 [Table 1]
【００２１】上表から明らかなように、実施例Ａに係る
ものは、従来例Ｂ及び従来例Ｃに係るものと比較してＬ
Ｃ特性が著しく改善されるとともに、ショ−ト不良の格
段の改善効果がみられる。また、従来例でｔａｎδにみ
られるような、他の特性の悪化要因にもなっていないこ
とがわかる。As is clear from the above table, the device according to the embodiment A has a lower L value than the devices according to the conventional examples B and C.
The C characteristic is remarkably improved, and a remarkable improvement effect of short-circuit failure is observed. In addition, it can be seen that it does not cause any other characteristic deterioration such as tan δ in the conventional example.
【００２２】なお、上記実施例では陽極箔としてアルミ
ニウム箔を用いたものを例示して説明したが、タンタル
箔、ニオブ箔などの弁作用金属箔を用いたものにも適用
できる。In the above embodiment, an anode foil using an aluminum foil has been described as an example. However, the invention can be applied to a foil using a valve metal foil such as a tantalum foil or a niobium foil.
【００２３】また、化成電圧として、上記実施例では５
０Ｖのものを例示して説明したが、これに限定されるも
のではない。In the above embodiment, the formation voltage is 5
Although an example of 0V has been described, the present invention is not limited to this.
【００２４】[0024]
【発明の効果】本発明によれば、化学酸化重合後の再化
成処理が妥当な電圧及び電流密度で行われるため、皮膜
修復がスム−ズに成され、ショ−ト不良、ＬＣ不良など
が完全に防止できるとともに、本発明の範囲外で再化成
が行なわれた場合や、再化成が行なわれない場合に比
べ、格段に使用電圧の拡大が図れる。According to the present invention, since the re-chemical conversion treatment after the chemical oxidative polymerization is performed at an appropriate voltage and current density, the film can be repaired smoothly, and short shots and LC defects can be prevented. This can be completely prevented, and the operating voltage can be significantly increased as compared with the case where re-formation is performed outside the scope of the present invention or the case where re-formation is not performed.
Claims (1)
酸化重合により化学重合膜を形成した後、この化学重合
膜上に電解酸化重合により電解重合膜を形成する固体電
解コンデンサの製造方法において、酸化皮膜上に化学重
合膜を形成した後、化成液中でコンデンサ素子に電流密
度：０．０５〜０．５Ａ／ｄｍ2 ，印加電圧：化成電圧
の１／２〜１倍の電圧を印加することを特徴とする固体
電解コンデンサの製造方法。1. A method for manufacturing a solid electrolytic capacitor, comprising: forming a chemically polymerized film by chemical oxidation polymerization on an oxide film formed on a valve metal, and then forming an electrolytic polymerized film on the chemically polymerized film by electrolytic oxidation polymerization. After forming a chemically polymerized film on the oxide film, a current density of 0.05 to 0.5 A / dm 2 and an applied voltage of 1/2 to 1 times the formation voltage are applied to the capacitor element in the chemical conversion solution. A method for manufacturing a solid electrolytic capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27716991A JP2811648B2 (en) | 1991-09-27 | 1991-09-27 | Method for manufacturing solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27716991A JP2811648B2 (en) | 1991-09-27 | 1991-09-27 | Method for manufacturing solid electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0590081A JPH0590081A (en) | 1993-04-09 |
| JP2811648B2 true JP2811648B2 (en) | 1998-10-15 |
Family
ID=17579769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27716991A Expired - Fee Related JP2811648B2 (en) | 1991-09-27 | 1991-09-27 | Method for manufacturing solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2811648B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4720075B2 (en) * | 2003-09-30 | 2011-07-13 | 日本ケミコン株式会社 | Manufacturing method of solid electrolytic capacitor |
| US7423862B2 (en) | 2004-12-24 | 2008-09-09 | Showa Denko K.K. | Solid electrolytic capacitor element, solid electrolytic capacitor and production method thereof |
| JP2007036147A (en) * | 2005-07-29 | 2007-02-08 | Showa Denko Kk | Solid electrolytic capacitor element and its manufacturing method |
| JP4739148B2 (en) * | 2005-08-29 | 2011-08-03 | Ｎｅｃトーキン株式会社 | Solid electrolytic capacitor |
-
1991
- 1991-09-27 JP JP27716991A patent/JP2811648B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0590081A (en) | 1993-04-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2580980B2 (en) | Tantalum solid electrolytic capacitor and method of manufacturing the same | |
| JP3245567B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP2811648B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3362600B2 (en) | Manufacturing method of capacitor | |
| JP2836114B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3026817B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP2657932B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3030054B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP3864651B2 (en) | Solid electrolytic capacitor and manufacturing method thereof | |
| JP2006108192A (en) | Solid electrolytic capacitor | |
| JP4780893B2 (en) | Solid electrolytic capacitor | |
| JPH04274312A (en) | Manufacture of solid electrolytic capacitor | |
| JPH03139816A (en) | Manufacture of solid electrolytic capacitor | |
| JP2001155965A (en) | Manufacturing method of solid electrolytic capacitor | |
| JPS5833688B2 (en) | Manufacturing method of electrolytic capacitor | |
| JP3750476B2 (en) | Manufacturing method of solid electrolytic capacitor | |
| JPH11121280A (en) | Solid electrolytic capacitor and manufacturing method therefor | |
| JP3055199B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP2995109B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JP2004128035A (en) | Method of manufacturing solid-state electrolytic capacitor | |
| JPH0373509A (en) | Manufacture of solid electrolytic capacitor | |
| JP2003297672A (en) | Method of manufacturing solid electrolytic capacitor | |
| JPH05152169A (en) | Manufacture of solid electrolytic capacitor | |
| JPH04137517A (en) | Manufacture of solid electrolytic capacitor | |
| JP2007103468A (en) | Electrolytic capacitor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080807 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080807 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090807 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100807 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100807 Year of fee payment: 12 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110807 Year of fee payment: 13 |
|
| LAPS | Cancellation because of no payment of annual fees |