JPH03272032A - Member for information recording - Google Patents
Member for information recordingInfo
- Publication number
- JPH03272032A JPH03272032A JP2069642A JP6964290A JPH03272032A JP H03272032 A JPH03272032 A JP H03272032A JP 2069642 A JP2069642 A JP 2069642A JP 6964290 A JP6964290 A JP 6964290A JP H03272032 A JPH03272032 A JP H03272032A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- thin film
- film
- metal layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 229910052718 tin Inorganic materials 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 229910052745 lead Inorganic materials 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 4
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 4
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229910052741 iridium Inorganic materials 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract 2
- 229910052758 niobium Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 58
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 239000011241 protective layer Substances 0.000 abstract description 6
- 229910052791 calcium Inorganic materials 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 41
- 230000000694 effects Effects 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910005866 GeSe Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
本発明はレーザ光などの記録用エネルギービームによっ
て、たとえば映像や音声などのアナログ信号をＦＭ変調
したものや、電子計算機のデータや、ファクシミリ信号
やディジタルオーディオ信号などのディジタル情報を、
リアルタイムで記録することが可能な情報の記録用薄膜
に関する。The present invention uses a recording energy beam such as a laser beam to record FM-modulated analog signals such as video and audio, computer data, and digital information such as facsimile signals and digital audio signals.
This invention relates to a thin film for recording information that can be recorded in real time.
レーザ光によって薄膜に記録を行う記録原理は種々ある
が、膜材料の相転移（相変化とも呼ばれる）、フォトダ
ークニングなどの原子配列変化による記録や光磁気記録
は、膜の形状変化をほとんど伴わないので、２枚のディ
スクを樹脂により直接貼りあわせた両面ディスクが出来
るという長所を持っている。この種の記録に関連する公
知例としては１例えば特願昭６０−２２６７２３号が挙
げられる。There are various recording principles for recording on thin films using laser light, but recording based on phase transition (also called phase change) of the film material, changes in atomic arrangement such as photodarkening, and magneto-optical recording mostly involve changes in the shape of the film. Therefore, it has the advantage of being able to create a double-sided disc by directly bonding two discs together using resin. A known example related to this type of record is Japanese Patent Application No. 226723/1983.
上記従来技術のうち、相変化による記録や光磁気記録は
記録用ビームの照射による熱（約３００℃以上）によっ
て膜形状変化をほとんど伴わない変化を生じさせるもの
であるが、記録膜中に発生した熱が記録膜に近接した保
護層および金属膜に逃げてしまうと、記録に必要なレー
ザーパワーが大幅に増加する。一方、記録膜中に発生し
た熱は、上記記録用ビームの強度分布に対応してほぼ正
規分布をしており、中心付近は温度が高く周囲では温度
が低い、このため、相変化による記録の場合、中心部と
周辺部の原子配列変化速度が異むり、原子配列変化が一
様でなくなるため、特に周辺部に前に記録されていた信
号の消え残りが生じやすい。
そこで、上記周辺部の原子配列変化速度を中心部と同程
度にするために、記録に必要なレーザーパワーを増加し
た場合、上記中心部の温度がさらに高くなり結果として
その付近の上記樹脂が変形し、反射光量の変化で読み出
しを行なう際にノイズが増加する。これを防ぐには、熱
伝導率が大きくて熱を拡散させやすい金属膜を設ければ
よい。これによって、記録時の熱で上記の樹脂が変形し
、反射光量の変化で読み出しを行なう際に、ノイズが増
加するのも防ぐことができる。一方、金属元素を主成分
とする薄膜の熱伝導率が高いと記録感度が低下する。し
かし、単層の金属層では感度を低下させずに熱を拡散さ
せることはできない。
従って、本発明の目的は、記録信号に忠実な再生波形が
得られ、再生時にレーザ光が上記の薄膜の表面の形状の
変化により、散乱されない、また、上記の金属元素を主
成分とする薄膜の熱伝導によって記録感度が低下しにく
い情報記録用部材を提供することにある。Among the conventional technologies mentioned above, recording by phase change and magneto-optical recording cause changes with almost no change in film shape due to heat (approximately 300°C or more) caused by irradiation with a recording beam. If this heat escapes to the protective layer and metal film close to the recording film, the laser power required for recording will increase significantly. On the other hand, the heat generated in the recording film has an almost normal distribution corresponding to the intensity distribution of the recording beam, and the temperature is high near the center and low in the surrounding area. In this case, the rate of change in atomic arrangement in the center and the periphery is different, and the change in atomic arrangement is not uniform, so that previously recorded signals are likely to remain particularly in the periphery. Therefore, if the laser power necessary for recording is increased in order to make the rate of change of atomic arrangement in the periphery similar to that in the center, the temperature in the center will further increase, resulting in deformation of the resin in the vicinity. However, noise increases during readout due to changes in the amount of reflected light. To prevent this, a metal film that has high thermal conductivity and easily diffuses heat may be provided. This prevents the resin from being deformed by the heat during recording and from increasing noise during reading due to changes in the amount of reflected light. On the other hand, if the thermal conductivity of a thin film whose main component is a metal element is high, the recording sensitivity will be reduced. However, a single metal layer cannot diffuse heat without reducing sensitivity. Therefore, it is an object of the present invention to provide a thin film that can obtain a reproduced waveform that is faithful to the recorded signal, that laser light is not scattered due to changes in the surface shape of the thin film during reproduction, and that has the above-mentioned metal element as its main component. An object of the present invention is to provide an information recording member whose recording sensitivity is less likely to decrease due to heat conduction.
上記目的は、基板上に形成された記録用ビームの照射を
受けて変化を生ずる情報記録用薄１１にを有する情報記
録用部材において、上記の記録用薄膜に近接して適当な
金属元素を主成分とする２層の薄膜を設けることにより
達成される。記録用薄膜と上記の金属元素を主成分とす
る薄膜との間に、中間層を設け、この膜厚を調節するこ
とによって上記の金属元素を主成分とする薄膜への熱伝
導をある程度調節できる。しかし、光の干渉効果を利用
して大きな再生信号を得ために膜厚は制約を受け、実際
には調節が難しい、上記の金属元素を主成分とする２層
の薄膜のうち、第一金属層としてはＭｇ、Ｓｉ、Ｃａ、
Ｔｉｙ Ｖ、Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎ、Ｎ
ｂ２Ｍｏ、Ｒｈ、Ｚｒ。
Ｐｄ、Ｓｎ、Ｓｂ、Ｔｅ、Ｔａ、Ｗ、Ｉ ｒ、Ｐｔ。
Ｐｂ、ＢｉおよびＣより成る群より選ばれた少なくとも
一者を主成分とする薄膜を、第二金属屑としてはＡｌ、
Ｃｕ、ＡｇおよびＡｕより成る群より選ばれた少なくと
も一者を主成分とする薄膜を用いる。より好ましくは、
第一金属層としてＮｉを、第二金属屑としてＡｕを用い
る。
第一金属層の金属元素を主成分とする薄膜は、熱伝導率
が１５Ｗ／ｍ・Ｋ以上１７０Ｗ／ｍ・Ｋ以下の範囲が好
ましく、膜厚は１０ｎｍ以上ｌＯＱｎｍ以下の範囲が好
ましい、特に、熱伝導率が５０Ｗ／ｍ・Ｋ以上１００Ｗ
／ｍ・Ｋ以下、膜厚が約１０ｎｍ以上５０ｎｍ以下の、
金属元素を主成分とする薄ｌＩεを用いると、上記の記
録感度低下を貼止する効果が穎著である。熱拡散係数は
２３ｃ ｍ”／ ｓ ｅ ｃ以上６９ｃｍ”／ｓｅｃ以
下が灯ましい。
第二金属層の金属元素を主成分とする薄膜は、熱伝導率
が２３０Ｗ／ｍ・Ｋ以上４２０Ｗ／ｍ・Ｋ以下の範囲が
好ましく、膜厚は２０ｎｍ以上２００ｎｍ以下の範囲が
好ましい。特に、熱伝導率が３００Ｗ／ｍ・Ｋ以上４０
０Ｗ／ｍ・Ｋ以下、膜厚が約５０ｎｍ以上２００ｎｍ以
下の金属元素を主成分とする薄膜を用いると、記録感度
の低下が少なく、熱による変形、変質を防止する効果が
大きい。
第一金属層は第二金属層と他の層との間に存在するので
、これら層間の接着性を改善する役割も果たすことがで
きる。
記録膜の膜厚は２０ｎｍ以上２５０ｎｍ以下の範囲が記
録感度、Ｓ／Ｎ比などの点で好ましく、中間層の膜厚と
合せて調整することが好ましい。
中間層の膜厚は５０ｎｍ以上５００ｎｍ以下の範囲が好
ましい、この層の膜厚は、光の干渉効果を利用して大き
な再生信号を得るために、上記記録膜の膜厚と合せて調
整することが好ましい。
一般に薄膜に光を照射すると、その反射光は薄膜表面か
らの反射光と薄膜裏面からの反射光との重ねあわせにな
るため干渉をおこす０反射率で信号を読み取る場合には
、上記のそれぞれの膜の膜ｐＪを調整して反射率の値が
小さい条件を満たすことが好ましい、これは、信号読み
だし時のコントラスト比が大きくなり、記録感度も高く
なるからである。中間層の特に好ましい膜厚範囲は８０
ｎｍ以上２５０ｎｍ以下の範囲である。記録膜の屈折率
と膜厚の積は１１００ｎ以上６００ｎｍ以下、中１川層
の屈折率と膜厚の積は１１００ｎ以上６００ｎｍ以下の
範囲が特に好ましい、ただし、記録膜については、記録
膜の少なくとも一部分の屈折率と膜厚の積が上記の範囲
内にあればよい、これらの屈折率と膜厚の積の好ましい
範囲は、本発明に含まれない低熱伝導率金属あるいは高
熱伝導率金属を主成分とする層を設ける場合にも有効で
ある。中間層に使用できる物質は、酸化物、低酸化物、
硫化物、窒化物などであって、たとえば主成分が、Ｃｅ
０ａ、Ｌａ、Ｏ，、Ｓｉｎ、Ｓｉｎ、。
Ｉ ｎ２０．、Ａｌ、０．、Ｇｅｍ、Ｇｅｍ、、Ｐｂｏ
。
ｂ ｎ Ｏ、Ｓｎ Ｏｘ ＋ Ｂ ｌ ｚ Ｏａ ＊
Ｔ ｅ Ｏｘ ｒ Ｗｏｗ ｒＷＯ３，Ｔａ２０５．
Ｓｃ、０３．Ｙ、０３．ＴｉＯ，。
ＺｒＯ，、ＣｄＳ、ＺｎＳ、ＣｄＳｅ、Ｚｎ５ｅ。
Ｉ ｎｚｓ３． Ｉ ｒ＋、Ｓ ｅ、、 Ｓ ｂ、Ｓ、
、 Ｓ ｂ、Ｓ ｅ、ｓＧａ、Ｓ３．Ｇａ２Ｓｅ３．Ｍ
ｇＦ、、ＣｅＦａｓ ＣａＦ ２ ＊ Ｇ ｅ Ｓ ＊
Ｇ ｅ Ｓ ｅ ｔ Ｇ ｅ Ｓ ｅ ２ ｇ Ｓ
ｎ Ｓ ｔ ５ｎＳｅ、 ＰｂＳ、 Ｐｂ５ｅ、ｎ
ｉ、ｓ３．Ｂｉ、５ｅａｔ ＴａＮ、 Ｓｉ、Ｎ、
、ＡＩＮ＋ Ｓｉ、Ｔｉ。
Ｂ４Ｃ，ＳｉＣ，ＢおよびＣのうちの少なくとも一者に
近い組成であるものが好ましい、中間層は使用するレー
ザ光の消衰係数ｋが０．０３以上１゜０以下であると、
記録感度が高く好ましい。中間層とは反対側（光入射側
）の保護層にも中間層に用いるものに近い組成の物質を
使用できるが、消衰係数は０．１以下が好ましいので１
例えば酸化物の場合、酸素欠陥を少なくする方がよい。
本発明の金属元素を主成分とする２層薄膜の光入射側と
反射側の面に近接してさらに上記の中間層に使用可能な
材料の暦や金属層を設ければさらに強度が増す。本発明
の金属元素を主成分とする２層薄膜は、記録膜と基板と
の間に形成してもよいし。
記録膜の基板とは反対の側に設けてもよい。前の場合に
は光は基板とは反対の側から入射させ、後の場合には光
は基板を通して入射させる。
本発明はディスク状記録媒体ばかりでなく、テープ状、
カード状などの記録媒体にも有効である。The above object is to provide an information recording member having an information recording thin layer 11 formed on a substrate that changes when irradiated with a recording beam, in which a suitable metal element is mainly coated in the vicinity of the recording thin layer. This is achieved by providing two thin film layers as components. An intermediate layer is provided between the recording thin film and the thin film mainly composed of the above metal element, and by adjusting the thickness of this film, the heat conduction to the thin film mainly composed of the above metal element can be adjusted to some extent. . However, in order to obtain a large reproduced signal using the interference effect of light, the film thickness is limited, and in practice it is difficult to adjust the thickness. The layers include Mg, Si, Ca,
Tiy V, Cr, Mn, Fe, Co, Ni, Zn, N
b2Mo, Rh, Zr. Pd, Sn, Sb, Te, Ta, W, Ir, Pt. A thin film containing at least one selected from the group consisting of Pb, Bi and C as a main component, Al as the second metal scrap,
A thin film containing at least one selected from the group consisting of Cu, Ag, and Au as a main component is used. More preferably,
Ni is used as the first metal layer and Au is used as the second metal scrap. The first metal layer, which is a thin film whose main component is a metal element, preferably has a thermal conductivity in a range of 15 W/m·K or more and 170 W/m·K or less, and a film thickness preferably in a range of 10 nm or more and 1OQ nm or less, in particular, Thermal conductivity is 50W/m・K or more 100W
/m・K or less, the film thickness is approximately 10 nm or more and 50 nm or less,
The use of thin lIε containing a metal element as a main component has a remarkable effect in overcoming the above-mentioned decrease in recording sensitivity. The thermal diffusion coefficient is preferably 23 cm"/sec or more and 69 cm"/sec or less. The second metal layer, which is a thin film mainly composed of a metal element, preferably has a thermal conductivity in a range of 230 W/m·K or more and 420 W/m·K or less, and a film thickness preferably in a range of 20 nm or more and 200 nm or less. In particular, the thermal conductivity is 300W/m・K or more40
When a thin film containing a metal element as a main component and having a film thickness of 0 W/m·K or less and a film thickness of about 50 nm or more and 200 nm or less is used, the decrease in recording sensitivity is small and the effect of preventing deformation and alteration due to heat is large. Since the first metal layer is present between the second metal layer and other layers, it can also serve to improve the adhesion between these layers. The thickness of the recording film is preferably in the range of 20 nm or more and 250 nm or less in terms of recording sensitivity, S/N ratio, etc., and is preferably adjusted in conjunction with the thickness of the intermediate layer. The thickness of the intermediate layer is preferably in the range of 50 nm or more and 500 nm or less. The thickness of this layer should be adjusted in accordance with the thickness of the recording film in order to obtain a large reproduction signal by utilizing the interference effect of light. is preferred. Generally, when a thin film is irradiated with light, the reflected light is a superposition of the reflected light from the surface of the thin film and the reflected light from the back of the thin film, which causes interference.When reading a signal with a reflectance of 0, each of the above It is preferable to adjust the film pJ of the film to satisfy the condition that the reflectance value is small. This is because the contrast ratio at the time of signal reading becomes large and the recording sensitivity becomes high. A particularly preferable thickness range of the intermediate layer is 80
The range is from nm to 250 nm. It is particularly preferable that the product of the refractive index and film thickness of the recording film is 1100n or more and 600nm or less, and the product of the refractive index and film thickness of the middle 1st layer is 1100n or more and 600nm or less. It is sufficient that the product of the refractive index and film thickness of a portion is within the above range. It is also effective when providing a layer as a component. Materials that can be used for the intermediate layer include oxides, low oxides,
Sulfides, nitrides, etc., for example, the main component is Ce
0a, La, O,, Sin, Sin,. I n20. , Al, 0. ,Gem,Gem,,Pbo
. b n O, Sn Ox + B l z Oa *
T e Ox r Wow rWO3, Ta205.
Sc, 03. Y, 03. TiO,. ZrO,, CdS, ZnS, CdSe, Zn5e. I nzs3. I r+, S e,, S b, S,
, S b, S e, sGa, S3. Ga2Se3. M
gF,,CeFasCaF2*GeS*
G e S e t G e S e 2 g S
n S t 5nSe, PbS, Pb5e, n
i, s3. Bi, 5eat TaN, Si, N,
,AIN+Si,Ti. It is preferable that the intermediate layer has a composition close to at least one of B4C, SiC, B and C, and the extinction coefficient k of the laser beam used is 0.03 or more and 1°0 or less,
It is preferable because it has high recording sensitivity. A material with a composition similar to that used for the intermediate layer can be used for the protective layer on the opposite side (light incident side) from the intermediate layer, but the extinction coefficient is preferably 0.1 or less, so 1
For example, in the case of oxides, it is better to reduce oxygen vacancies. If a metal layer made of a material that can be used as the intermediate layer is further provided close to the light incident side and reflection side surfaces of the two-layer thin film mainly composed of a metal element according to the present invention, the strength will be further increased. The two-layer thin film containing a metal element as a main component of the present invention may be formed between a recording film and a substrate. It may be provided on the side of the recording film opposite to the substrate. In the first case, the light enters from the side opposite the substrate, and in the latter case, the light enters through the substrate. The present invention applies not only to disk-shaped recording media, but also to tape-shaped,
It is also effective for recording media such as cards.
上記の第一金属層の金属元素を主成分とする薄膜は、熱
伝導率の低い金属元素を主成分とする薄膜であり、上記
の記録用ビームの照射によって記録膜に生じる熱が直ち
に横方向に広がって記録感度が低下するのを防止すると
共に、外力、特に引っ張り力に対して強い、上記の第二
金属層の金属元素を主成分とする薄膜は、上記の記録用
ビームの照射によって生じる熱を拡散させる。また、上
記の記録用ビームの光を効率良く反射し、反射光量の変
化を大きくするものである。
［実施例］
以下、本発明の一実施例を第１図により説明する。
まず、案内溝を有する基板ｌ（ポリカーボネート、直径
１３０ｍｍ、厚さ１．２ｍｍ）に、本発明の保護層の酸
化物、硫化物あるいは窒化物を主成分とする薄膜として
（Ｚ ｎ Ｓ ） ｓｏ （ｂ ｘ Ｏｘ） ｚ。に近
い組成の薄ｌＩε２（約１０１００ｎを積層した後、上
記光入射側保護層を介して形成した記録用ビームの照射
を受けてほとんど変形を伴わないで原子配列変化を生ず
るＳ ｎ −Ｓ ｂ −Ｔ ｅ糸情報記録用薄膜３（厚
さ約３０ｎｍ）に（ＺｎＳ）、。
（Ｓ ｘ ＯＪ ｚ。に近い組成の中間層４（厚さ約２
３０ｎｍ）を積層し、さらに本発明の第一金属層の金属
元素を主成分とする薄膜５としてＮｉ６°Ｃｒｏの薄膜
（約５０ｎｍ）を積層し、第二金属層の金属元素を主成
分とする薄膜６として金の薄膜（約１０１００ｎを積層
した後、紫外線の照射により硬化する樹脂７を用いて、
真空中（約１０Ｐａ）で紫外線に約２分間露光し、前記
金属元素を主成分とする薄膜５と保護板８（直径１３０
ｍｍ。
厚さ１．２ｍｍ）を貼りあわせた９次に、上記の情報記
録用薄膜３に基板ｌ側（紙面上で下方）より記録用レー
ザビームを照射し、情報の記録を行った。次に、上記の
情報記録用薄膜３に情報を記録した部分の上記の棚脂７
を上記保護板８側（紙面上で上方）より顕微＠（ｘ４０
０倍）で観察し変質および変形が生じていないことを確
認した。
本実施例のＮｉの膜厚を変化させたとき、記録に必要な
レーザパワーと１００回記録書き換え後の雑音レベルは
次のように変化した。
膜厚（ｎｍ） 記録レーザパワー 雑音レベル５
９ｍＷ ７５ｄＢｍ１０
１２ｍＷ −８０ｄＢｍ２０ １４ｍＷ
−８５ｄＢｍ５０ １８ ｍ Ｗ
−８５ｄ Ｂ ｍ１００ ２０ｍＷ
−８５ｄＢｍ１５０ ２３ｍＷ −
８０ｄＢｍ２００ ２５ｍＷ −７５ｄ
Ｂｍ５００ ３０ｍＷ −７０ｄＢｍさ
らに本実施例の金の膜厚を変化させたとき、記録に必要
なレーザパワーと１００回記録書き換え後の雑音レベル
は次のように変化した。
膜厚（ｎｍ） 記録レーザパワー 雑音レベル５
９ｍＷ −−７５ｄＢｍ１０
１０ｍＷ −８０ｄＢｍ２０ １１ｍ
Ｗ −８５ｄＢｍ５０ １２ｍＷ
−８５ｄＢｍ１００ １５ｍＷ −
８５ｄＢｍ１５０ １８ｍＷ
−８５ｄＢｍ２００ ２０ｍＷ
−８５ｄＢｍ２５０ ２５ｍＷ
−８０ｄＢｍ３００ ３０ｍＷ
−７５ｄＢｍ上記の中間層４をＳ ｉ Ｏ，以外
のＣｅＯ２゜Ｌａ、Ｏ，、Ｓ ｉｏ、Ｉ ｎａ０３．Ａ
ｌ２Ｏ，、Ｇｅｍ。
Ｇ ｅ Ｏｚｙ Ｔ ａ、Ｏ，、Ｐ ｂ Ｏｘ Ｓ ｎ
Ｏ，Ｓ ｎ Ｏａ。
Ｂｉ、０．、ＴｅＯ２，ＷＯ，、ＷＯ３，Ｓｃ、Ｏ，。
Ｙ、０１１Ｔｉｅ、ＺｒＯ，、ＣｄＳ、ＺｎＳ。
ＣｄＳｅ、Ｚｎ５ｅ、Ｉｎ、Ｓ、、Ｉｎ２Ｓｅ３゜””
ｚ Ｓ３ｒ Ｓｂｚ Ｓ”３１ Ｇ ａ、 Ｓ２ｇ
Ｇ ａ２Ｓ ｅ３＋ＭｇＦ、ＣｅＦ、ＣａＦ、、ＧｅＳ
、ＧｅＳｅ。
ＧｅＳｅ、、ＳｎＳ、５ｎＳｅ、ＰｂＳ、Ｐｂ５ｅ、Ｂ
ｉ、Ｓ、、Ｂｉ２Ｓｅ、、ＴａＮ、Ｓｉ、Ｎ、。
ＡＩＮ、Ｓｉ、Ｔｉ、Ｂ、Ｃ，ＳｉＣ，ＢおよびＣのう
ちの少なくとも一部を主成分とするもので置き換えても
同様の結果が得られた。これらのうちで、（Ｚ ｎ Ｓ
） ｓｏ （Ｓ ｉ ０２） ｚ＊以外にはＳｉ。
Ｎ４、あるいはＳｉＡＩＮｍ？あるいはＡＩＮ、あるい
はＴ ａ、０．に近い組成が好ましい、また、中間層の
膜Ｊ４を２０ｎｍ以上８０ｎｍ以下の範囲としても良好
な結果が得られた。また、上記の第一金属層の金属元素
を主成分とする薄膜６のＮｉ −Ｃｒの少なくとも一部
をＭ ｇ ｙ Ｓ ｌ ＃ Ｃａ ｅ Ｔ １ ｍＶ、
Ｃｒ、Ｍｎ、Ｆｅ、Ｃｏ、Ｚｎ、Ｚｒｔ Ｎｂ＊Ｍｏ、
Ｒｈ、Ｚｒ、Ｐｄ、Ｓｎ、Ｓｂ、Ｔｅ、Ｔａ、Ｗ、Ｉ
ｒ、Ｐｔ、Ｐｂ、ＢｉおよびＣより成る群より選ばれた
少なくとも一部を主成分とする金属で置き換えても同様
の特性が得られる。さらに、上記の第二金属層の金属元
素を主成分とする薄（１ε７のＡｕの少なくとも一部を
Ａｕ以外のＡＩ。
ＣｕおよびＡｇより成る群より選ばれた少なくとも一部
を主成分とする金属で７４き換えても同様の特性が得ら
れる６例えば、第一金属層をＴｉいＡ１３１、第二金属
層をＡ Ｉ −ｓ Ｔ ｉ−ｓで置き換えても同様の結
果が得られた。
本実施例の第一金属層のＮｉ１ａＣｒ４°の熱伝導率は
約１００ Ｗ ／ ｍ ／ Ｋであった。第一金属層に
熱伝導率の異なる材質を用いた場合、記録レーザパワー
と再生波形歪みを表わす第二次高調波は次のように変化
した。
熱伝導率（Ｖ／ｍ／Ｋ） 記録レーザパワー 第二次
高調波５０ １１ｍＷ ３０ｄＢ８
０ １１ｍＷ ２０ｄＢ１００
１２ｍＷ １５ｄＢ１５０
１３ｍＷ １３ｄＢ２００ １５ｍ
Ｗ １２ｄＢ２５０ １８ｍＷ
１１ｄＢ３００ ２０ｍＷ
１０ｄＢ４００ ２３ｍＷ １ｏ
ｄＢ４２０ ２３ｍＷ １０ｄＢま
た、記録膜の非晶質に近い状態の部分の屈折率と膜厚の
積が２００ｎｍ以上、６００ｎｍ以下。
中間層の屈折率と膜厚の積が３０ｎｍ以上、２００ｎｍ
以下および、３００ｎｍ以上、７００ｎｍ以下の範囲で
は、再生信号ＣＮ比４６ｄＢ以上が得られた。記録膜の
結晶状態の部分の屈折率と膜厚の積が上記の範囲内に有
るようにしてもさしつかえない、中間層を形成しない場
合は、記録感度が約５０％低下し、書き換え可能回数が
少なくなるが、他の特性に大きな変化は無く、使用可能
であった。
第２図に示したように、ガラス基板１０上に形成した紫
外線硬化樹脂層９の表面に案内溝を形成し、その上に第
１図のディスクと同様な記録層を順序を逆に（金層から
）構成し、保護板と貼り合せずに使用しても、はぼ同様
な効果が得られた。
ただし、この場合はレーザ光は基板とは反対の側から入
射させた。
第３図に示すように、従来は情報の書き換えによって雑
音レベル（図中Ｂ）が２倍程度に増加するが、本発明の
金属元素を主成分とする２層薄膜を導入することによっ
て雑音レベル（図中Ａ）はほとんど変化しないことがわ
かった。５ｎ−８ｂ−Ｔｅ記録膜の代わりにＴｅＦｅＣ
ｏ系などの光磁気記録膜を用いた場合、もともと記録時
の温度が低いので変形の程度は軽いが１本発明の２層金
属膜を用いることによる効果は認められた。
上記の保ｉ！！層、あるいは中間層、あるいは金属層を
２種類以上の元素で構成される薄膜に形成する際、第４
図に示したように、スパッタ室２３内において、ＺｎＳ
とＳｉｎ、のターゲット、あるいはＮｉとＣｒのターゲ
ット、あるいはＡｕとＡＩのターゲットなど、２種の材
料からなるターゲット１９．２０を並べたものを用いて
、基板２１を矢印２２の方向に移動させながら基板２１
上にスパッタすると、それぞれＺｎＳ−８ｉＯ，ＩＩ莫
。
Ｎ ｉ −Ｃｒ膜、Ａｕ−Ａｌ膜が容易に得られる。The thin film mainly composed of a metal element of the first metal layer described above is a thin film mainly composed of a metal element with low thermal conductivity, and the heat generated in the recording film by the irradiation of the recording beam described above is immediately lateral. The thin film mainly composed of the metal element of the second metal layer is resistant to external forces, especially tensile forces, and prevents the recording sensitivity from decreasing due to the spread of the film caused by the irradiation of the recording beam. Diffuse heat. Further, the light of the recording beam described above is reflected efficiently and the change in the amount of reflected light is increased. [Example] Hereinafter, an example of the present invention will be described with reference to FIG. First, a thin film containing oxide, sulfide, or nitride as a protective layer of the present invention (Z n S ) so ( b x Ox) z. After laminating a thin layer of lIε2 (approximately 10,100 nm) with a composition close to that of S n -S b -, the atomic arrangement changes with almost no deformation when irradiated with the recording beam formed through the light-incidence side protective layer. Te yarn information recording thin film 3 (thickness: about 30 nm) is coated with (ZnS), and an intermediate layer 4 (thickness: about 2
30 nm) is laminated, and a Ni6°Cro thin film (approximately 50 nm) is further laminated as the thin film 5 whose main component is the metal element of the first metal layer of the present invention, and whose main component is the metal element of the second metal layer. After laminating a gold thin film (approximately 10100 nm) as the thin film 6, a resin 7 that is cured by ultraviolet irradiation is used.
The thin film 5 mainly composed of the metal element and the protective plate 8 (diameter 130
mm. Next, information was recorded by irradiating the information recording thin film 3 with a recording laser beam from the substrate l side (lower side on the paper). Next, the above-mentioned shelf fat 7 in the part where information is recorded on the above-mentioned information recording thin film 3
from the protection plate 8 side (above on the page) using a microscope @ (x40
It was confirmed that no alteration or deformation had occurred. When the Ni film thickness of this example was changed, the laser power required for recording and the noise level after 100 recording and rewriting changes were as follows. Film thickness (nm) Recording laser power Noise level 5
9mW 75dBm10
12mW -80dBm20 14mW
-85dBm50 18mW
-85d B m100 20mW
-85dBm150 23mW -
80dBm200 25mW -75d
Bm500 30 mW -70 dBm Furthermore, when the gold film thickness of this example was changed, the laser power required for recording and the noise level after 100 recording and rewriting changes as follows. Film thickness (nm) Recording laser power Noise level 5
9mW --75dBm10
10mW -80dBm20 11m
W -85dBm50 12mW
-85dBm100 15mW -
85dBm150 18mW
-85dBm200 20mW
-85dBm250 25mW
-80dBm300 30mW
-75 dBm The above intermediate layer 4 is made of CeO2°La,O,,Sio,Ina03. A
l2O,, Gem. G e Ozy T a, O,, P b Ox S n
O, S n Oa. Bi, 0. ,TeO2,WO,,WO3,Sc,O,. Y, 011Tie, ZrO,, CdS, ZnS. CdSe, Zn5e, In, S,, In2Se3゜””
z S3r Sbz S”31 G a, S2g
Ga2S e3+MgF, CeF, CaF,, GeS
, GeSe. GeSe, SnS, 5nSe, PbS, Pb5e, B
i,S,,Bi2Se,,TaN,Si,N,. Similar results were obtained even when at least a portion of AIN, Si, Ti, B, C, SiC, B, and C was replaced with one having a main component. Among these, (Z n S
) so (S i 02) Si except for z*. N4 or SiAINm? Or AIN, or T a, 0. It is preferable to have a composition close to , and good results were also obtained even when the intermediate layer film J4 had a thickness in the range of 20 nm or more and 80 nm or less. Further, at least a part of the Ni-Cr of the thin film 6 mainly composed of the metal element of the first metal layer is treated with MgySl#CaeT1 mV,
Cr, Mn, Fe, Co, Zn, Zrt Nb*Mo,
Rh, Zr, Pd, Sn, Sb, Te, Ta, W, I
Similar characteristics can be obtained even if at least a portion of the metal selected from the group consisting of r, Pt, Pb, Bi, and C is replaced with a metal having the main component. Furthermore, at least a part of the second metal layer mainly composed of a metal element (1ε7 Au is made of an AI other than Au. A metal whose main component is at least a part selected from the group consisting of Cu and Ag. For example, similar results were obtained even if the first metal layer was replaced with Ti A131 and the second metal layer was replaced with A I-s Ti-s. The thermal conductivity of the first metal layer of Ni1aCr4° in the example was about 100 W/m/K.When materials with different thermal conductivities were used for the first metal layer, the recording laser power and reproduction waveform distortion could be changed. The expressed second harmonic changed as follows: Thermal conductivity (V/m/K) Recording laser power Second harmonic 50 11 mW 30 dB8
0 11mW 20dB100
12mW 15dB150
13mW 13dB200 15m
W 12dB250 18mW
11dB300 20mW
10dB400 23mW 1o
dB420 23mW 10dB Also, the product of the refractive index and film thickness of the almost amorphous portion of the recording film is 200 nm or more and 600 nm or less. The product of the refractive index and film thickness of the intermediate layer is 30 nm or more, 200 nm
In the range of 300 nm or more and 700 nm or less, a reproduction signal CN ratio of 46 dB or more was obtained. There is no problem if the product of the refractive index and film thickness of the crystalline portion of the recording film is within the above range, but if no intermediate layer is formed, the recording sensitivity will decrease by about 50% and the number of rewrites will decrease. Although the amount decreased, there were no major changes in other properties and it was usable. As shown in FIG. 2, guide grooves are formed on the surface of the ultraviolet curable resin layer 9 formed on the glass substrate 10, and a recording layer similar to that of the disk in FIG. A similar effect was obtained even when the protective plate was used without being attached to a protective plate. However, in this case, the laser light was input from the side opposite to the substrate. As shown in Fig. 3, conventionally, the noise level (B in the figure) increases by about twice when information is rewritten, but by introducing the two-layer thin film mainly composed of metal elements of the present invention, the noise level It was found that (A in the figure) hardly changed. TeFeC instead of 5n-8b-Te recording film
When a magneto-optical recording film such as an o-based one is used, the degree of deformation is small since the temperature during recording is originally low, but the effect of using the two-layer metal film of the present invention was observed. The above protection! ! When forming a layer, an intermediate layer, or a metal layer into a thin film composed of two or more types of elements, the fourth
As shown in the figure, in the sputtering chamber 23, ZnS
Using a target of Sin, or the target of NI and CR, or the target of AU and AI, the target of 19.20, which is made of two materials, is used to move the board 21 in the direction of the arrow 22. Substrate 21
When sputtered on top, ZnS-8iO, II and ZnS-8iO, respectively. A Ni-Cr film and an Au-Al film can be easily obtained.
本発明によれば、レーザー光などの記録用ビームを記録
用薄膜に照射して情報を記録する時、上記記録用ビーム
の照射によって生ずる熱は、上記第一金属層によって拡
散が抑制され、上記第二金属層の金属元素を主成分とす
る薄膜によって振散されるため、上記ディスクの貼りあ
わせに用いる樹脂に熱が伝播することがない、また、記
録感度の低下も少ない。According to the present invention, when information is recorded by irradiating a recording thin film such as a laser beam, the heat generated by the irradiation of the recording beam is suppressed from being diffused by the first metal layer, and Since the heat is dispersed by the second metal layer, a thin film mainly composed of metal elements, the heat does not propagate to the resin used for bonding the disk together, and there is little decrease in recording sensitivity.
第１図、第２図は本発明の記録用部材の実施例用部材に
よる情報の書換え回数に対する雑音レベルの変化を示す
特性図、第４図は複数のターゲットを用いて本発明の情
報記録用部材を作製するスパッタリング装置の要部断面
図である。
符号の説明
１・・・案内溝を有する基板、２，１６・保護層、３゜
１５・・・情報記録用薄膜、４，１４・・中間層、５゜
１３・・・第一金属層、６，１２・・・第二金属層、７
゜１７樹脂、８．１８・・・保護板、１０・・・ガラス
基板。
１］・・・案内溝を有する樹脂、１９・・・第１ターゲ
ツト、２０・・・第１ターゲツト、２１・・・基板、２
２・・・の構成を示す断面図、第３図は本発明の情報記
録草
３
（き模ｉ田穀
予
田FIGS. 1 and 2 are characteristic diagrams showing changes in noise level with respect to the number of times information is rewritten by an embodiment of the recording member of the present invention, and FIG. FIG. 2 is a sectional view of a main part of a sputtering apparatus for producing a member. Explanation of symbols 1...Substrate having a guide groove, 2, 16, protective layer, 3゜15... thin film for information recording, 4, 14... intermediate layer, 5゜13... first metal layer, 6, 12... second metal layer, 7
゜17 resin, 8.18... protection plate, 10... glass substrate. 1]... Resin having a guide groove, 19... First target, 20... First target, 21... Substrate, 2
2 is a sectional view showing the structure of the information recording grass 3 of the present invention (Kimida Kokuyoda).
Claims (1)
化を生ずる情報記録用薄膜を有する記録媒体において、
上記情報記録用薄膜に接して、もしくは上記の情報記録
用薄膜に近接して形成した無機物および有機物のうち少
なくとも一者からなる保護層に接して、Ｍｇ、Ｓｉ、Ｃ
ａ、Ｔｉ、Ｖ、Ｃｒ、Ｆｅ、Ｃｏ、Ｎｉ、Ｚｎ、Ｚｒ、
Ｎｂ、Ｍｏ、Ｒｈ、Ｐｄ、Ｓｎ、Ｓｂ、Ｔｅ、Ｔａ、Ｗ
、Ｉｒ、Ｐｔ、Ｐｂ、ＢｉおよびＣより成る群より選ば
れた少なくとも一元素を主成分とする薄膜の第一金属層
と、Ａｌ、Ｃｕ、ＡｇおよびＡｕより成る群より選ばれ
た少なくとも一元素を主成分とする薄膜の第二金属層を
有することを特徴とする情報記録用部材。 ２、第一金属層を熱伝導率が１５Ｗ／ｍ・Ｋ以上１７０
Ｗ／ｍ・Ｋ以下の範囲のＡ群元素より選ばれた少なくと
も一者を主成分とする材料より形成し、第二金属層を熱
伝導率が２３０Ｗ／ｍ・Ｋ以上４２０Ｗ／ｍ・Ｋ以下の
範囲のＢ群元素より選ばれた少なくとも一者を主成分と
する材料より形成することを特徴とする特許請求の範囲
第１項に記載の情報記録用部材。 ３、上記の第一金属層の膜厚が１０ｎｍ以上１００ｎｍ
以下の範囲であり、上記の第二金属層の膜厚が２０ｎｍ
以上２００ｎｍ以下の範囲であることを特徴とする特許
請求の範囲第１項および第２項に記載の情報記録用部材
。[Claims] 1. A recording medium having an information recording thin film formed on a substrate that changes when irradiated with a recording beam,
Mg, Si, C
a, Ti, V, Cr, Fe, Co, Ni, Zn, Zr,
Nb, Mo, Rh, Pd, Sn, Sb, Te, Ta, W
, a thin first metal layer containing at least one element selected from the group consisting of Ir, Pt, Pb, Bi and C as a main component; and at least one element selected from the group consisting of Al, Cu, Ag and Au. An information recording member characterized by having a thin second metal layer containing as a main component. 2. The thermal conductivity of the first metal layer is 15 W/m・K or more 170
The second metal layer is formed from a material whose main component is at least one selected from Group A elements in the range of W/m・K or less, and the second metal layer has a thermal conductivity of 230 W/m・K or more and 420 W/m・K or less. The information recording member according to claim 1, characterized in that it is formed from a material whose main component is at least one selected from the group B elements in the range of . 3. The thickness of the first metal layer is 10 nm or more and 100 nm
The thickness of the second metal layer is 20 nm.
The information recording member according to claims 1 and 2, wherein the information recording member is in a range of 200 nm or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2069642A JPH03272032A (en) | 1990-03-22 | 1990-03-22 | Member for information recording |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2069642A JPH03272032A (en) | 1990-03-22 | 1990-03-22 | Member for information recording |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03272032A true JPH03272032A (en) | 1991-12-03 |
Family
ID=13408716
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2069642A Pending JPH03272032A (en) | 1990-03-22 | 1990-03-22 | Member for information recording |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03272032A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510164A (en) * | 1994-12-16 | 1996-04-23 | International Business Machines Corporation | Single-sided ablative worm optical disk with multilayer protective coating |
| WO2000021081A1 (en) * | 1998-10-07 | 2000-04-13 | Hitachi, Ltd. | Information recording medium and information recording device |
| US6132932A (en) * | 1996-11-25 | 2000-10-17 | Hitachi, Ltd. | Information recording medium and information recording and reproducing apparatus using the same |
-
1990
- 1990-03-22 JP JP2069642A patent/JPH03272032A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5510164A (en) * | 1994-12-16 | 1996-04-23 | International Business Machines Corporation | Single-sided ablative worm optical disk with multilayer protective coating |
| US6132932A (en) * | 1996-11-25 | 2000-10-17 | Hitachi, Ltd. | Information recording medium and information recording and reproducing apparatus using the same |
| US6340555B1 (en) | 1996-11-25 | 2002-01-22 | Hitachi, Ltd. | Information recording medium and information recording and reproducing apparatus using the same |
| WO2000021081A1 (en) * | 1998-10-07 | 2000-04-13 | Hitachi, Ltd. | Information recording medium and information recording device |
| US6954941B2 (en) | 1998-10-07 | 2005-10-11 | Hitachi, Ltd. | Information recording medium and information recording device |
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