JP2915112B2 - Information recording member and disk recording medium - Google Patents
Information recording member and disk recording mediumInfo
- Publication number
- JP2915112B2 JP2915112B2 JP2233280A JP23328090A JP2915112B2 JP 2915112 B2 JP2915112 B2 JP 2915112B2 JP 2233280 A JP2233280 A JP 2233280A JP 23328090 A JP23328090 A JP 23328090A JP 2915112 B2 JP2915112 B2 JP 2915112B2
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- JP
- Japan
- Prior art keywords
- recording
- protective layer
- group
- film
- substrate
- Prior art date
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Description
【産業上の利用分野】 本発明はレーザ光などの記録用エネルギビームによっ
て、たとえば映像や音声などのアナログ信号をFM変調し
たものや、電子計算機のデータや、ファクシミリ信号や
ディジタルオーディオ信号などのディジタル情報を、リ
アルタイムで記録することが可能な情報記録用部材の関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device in which analog signals such as video and audio are FM-modulated by a recording energy beam such as a laser beam, data from an electronic computer, and digital signals such as facsimile signals and digital audio signals. The present invention relates to an information recording member capable of recording information in real time.
レーザ光によって薄膜に記録を行う記録原理は種々あ
るが、膜材料の相転移（相変化とも呼ばれる）、フォト
ダークニングなどの原子配列変化による記録は、膜の形
状変化をほとんど伴わないので、２枚のディスクを樹脂
により直接貼りあわせた両面ディスクが出来るという長
所を持っている。また、このようなディスクの記録膜の
保護層としてZnS−SiO2系などの材料が優れていること
が知られている。 この種の記録に関連する従来例としては、例えば特願
昭60−226723、ZnS−SiO2系などの保護層材料に関する
従来例としては特開昭63−103453、特開昭63−224048、
特開昭63−306549が挙げられる。There are various recording principles of recording on a thin film by using a laser beam, but recording by a change in the atomic arrangement such as phase transition (also called phase change) of a film material and photodarkening hardly involves a change in the shape of the film. It has the advantage that a double-sided disc can be made by directly bonding two discs with resin. Further, it is known that excellent materials such as ZnS-SiO 2 system as a protective layer of the recording film of such a disk. As a conventional example related to this type of recording, for example, Japanese Patent Application No. Sho 60-226723, Sho 63-103453 as prior art regarding the protection layer material such as ZnS-SiO 2 system, JP 63-224048,
JP-A-63-306549 can be mentioned.
上記従来技術のうち、相変化による記録は記録用ビー
ムの照射による熱によって膜形状変化をほとんど伴わな
い原子配列変化を生じさせるものであるが、記録時に記
録膜を少なくとも部分的に融解させるので、高融点の保
護層で保護する必要が有る。この保護層は記録時に記録
膜と共に熱膨張するので、剥離がおこらないために、熱
膨張係数が記録膜と同程度であるのが好ましい。また、
保護層の熱伝導率が低い方が、記録膜に発生した熱の損
失が少なく高感度が得られるので好ましい。 ところで上記保護層を形成する材料のうち特に好まし
いのはZnSに近い組成の材料であるが、これらの材料
は、膜形成時にスパッタ装置壁面から剥離しやすく、剥
離した膜がディスク基板に付着して欠陥になりやすいと
いう問題点が有った。また、ZnSとSiO2、GeO2、SnO2、I
n2O3、TeO2、Al2O3などとの複合材料は、耐湿性が十分
でないという問題点があった。 本発明の目的は、記録信号に忠実な再生波形が得ら
れ、上記の薄膜の熱伝導によって記録感度が低下しにく
い、また、上記の硫化物などを主成分とする薄膜の融点
が適当な範囲に有り、熱変形や剥離により読み出しレー
ザ光が散乱されない、また、耐湿性が高く、ピンホール
などの欠陥の少ない記録用部材を提供することにある。Of the above prior arts, recording by phase change causes an atomic arrangement change with little change in film shape due to heat due to irradiation of a recording beam.However, since the recording film is at least partially melted during recording, It is necessary to protect with a high melting point protective layer. Since this protective layer expands with the recording film during recording, the thermal expansion coefficient is preferably about the same as that of the recording film in order to prevent peeling. Also,
It is preferable that the thermal conductivity of the protective layer be low because heat loss generated in the recording film is small and high sensitivity can be obtained. By the way, among the materials forming the protective layer, particularly preferred are materials having a composition close to ZnS, but these materials are easily peeled off from the wall surface of the sputtering apparatus at the time of film formation, and the peeled film adheres to the disk substrate. There was a problem that it easily became a defect. ZnS and SiO 2 , GeO 2 , SnO 2 , I
Composite materials with n 2 O 3 , TeO 2 , Al 2 O 3 , and the like, have a problem that moisture resistance is not sufficient. An object of the present invention is to obtain a reproduction waveform that is faithful to a recording signal, to reduce the recording sensitivity by heat conduction of the thin film, and to set the melting point of the thin film containing sulfide or the like as a main component within an appropriate range. Another object of the present invention is to provide a recording member in which a reading laser beam is not scattered due to thermal deformation or peeling, and has high moisture resistance and few defects such as pinholes.
上記目的は、基板上に形成された記録用ビームの照射
を受けて変化を生ずる情報記録用薄膜を有する情報記録
用部材において、上記の記録用薄膜に近接してZnS、ZnS
e,CdS,CdSeおよびInSよりなる群より選ばれた少なくと
も一者に近い組成の材料と、Ta2O5，Cu2O，WO3，MoO3，
CeO2，La2O3，およびSiOより成る群より選ばれた少なく
とも一者に近い組成の材料からなる酸化物を主成分とす
る材料の保護層を形成することによって達成される。 Ta2O5などのうち、より好ましくはTa2O5、CeO2、La2O
3、のそれぞれに近い組成の材料、特に好ましくはTa2O5
に近い組成の材料を用いる。組成の範囲は、ZnSなどよ
り成る群より選ばれた少なくとも一者に近い組成の材料
の含有量がモル％で30％以上98％以下、Ta2O5などより
成る群より選ばれた少なくとも一者に近い組成の材料の
含有量はモル％で２％以上70％以下が好ましい。記録膜
の片側の保護層だけが上記の材料より成ってもよいが、
両側の保護層が上記の材料より成ればさらに好ましい。 Ta2O5などより成る群より選ばれた少なくとも一者に
近い組成の材料のより好ましい含有量はモル％で５％以
上40％以下である。 記録膜の光入射側とは反対の側に金属元素を主成分と
する光反射層を設けると再生信号を大きくすることがで
き、さらに好ましい。光反射層と、光反射層側の保護層
（中間層とも呼ぶ）との間にW,Mo,Crのうちの少なくと
も一元素を主成分とする接着性改良層を設けると、書き
換え可能回数等が向上する。この方法は本発明の保護層
以外の保護層を用いた光記録媒体にも有効である。 上記保護層の熱伝導率は15W/m・Ｋ以下の範囲が好ま
しく、光入射側保護層の膜厚は1000nm迄使用可能である
が60nm以上200nm以下の範囲が好ましい。特に、熱伝導
率が1W/m・Ｋ以上10W/m・Ｋ以下、膜厚が約80nm以上150
nm以下が好ましい。このような保護層を用いると、上記
の記録用ビームの照射によって生ずる変質あるいは変形
を防止する効果が顕著であり、記録感度の低下も少な
い。熱拡散係数は0.23cm2/sec以上2.3cm2/sec以下が好
ましい。記録膜の膜厚は1.5nm以上250nm以下の範囲が記
録感度、SN比などの点で好ましく、上部保護層の膜厚と
合せて調整することが好ましい。上部保護層の膜厚は20
nm以上300nm以下の範囲が好ましい。光反射層の膜厚は2
0nm以上300nm以下の範囲が好ましい。 一般に薄膜に光を照射すると、その反射光は薄膜表面
側からの反射光と薄膜裏面からの反射光との重ねあわせ
になるため干渉をおこす。反射率で信号を読み取る場合
には、上記のそれぞれの膜の膜厚を調整して反射率の値
が小さい最適値となる条件を満たすことが好ましい。こ
れは、信号読みだし時のコントラスト比が大きくなり、
記録感度も高くなるからである。 記録膜の屈折率と膜厚の積は120nm以上、600nm以下、
下部保護層の屈折率と膜厚の積は120nm以上、400nm以下
の範囲が特に好ましい。ただし、記録膜については、記
録膜の少なくとも一部分の屈折率と膜厚の積が上記の範
囲内にあればよい。これらの屈折率と膜厚の積の好まし
い範囲は、本発明に含まれない酸化物、硫化物、セレン
化物あるいは窒化物を主成分とする保護層を設ける場合
にも有効である。 保護層の、使用するレーザ光に対する消衰係数ｋが、
0.03以上1.0以下であると、記録感度が高く好ましい。
本発明のZnS等よりなる材料を主成分とする薄膜に近接
して、さらに上記の保護層に使用可能な材料の層や金属
層を設ければさらに強度が増す。記録膜と光反射層との
間の保護層の消衰係数は0.1以下が好ましいので、例え
ば酸化物の場合、酸素欠陥を少なくする方がよい。 本発明の酸化物、およびセレン物および硫化物を主成
分とする薄膜は、記録膜と基板との間に形成してもよい
し、記録膜の基板とは反対の側に設けてもよい。両側に
設ければさらに好ましい。 本発明はディスク状記録媒体ばかりでなく、テープ
状、カード状などの記録媒体にも有効である。また、相
変化記録媒体ばかりでなく、光磁気記録媒体など、他の
記録原理による記録媒体にも有効である。An object of the present invention is to provide an information recording member having an information recording thin film that undergoes a change upon irradiation with a recording beam formed on a substrate.
a material having a composition close to at least one selected from the group consisting of e, CdS, CdSe and InS, and Ta 2 O 5 , Cu 2 O, WO 3 , MoO 3 ,
This is achieved by forming a protective layer of an oxide-based material composed of a material having a composition close to at least one selected from the group consisting of CeO 2 , La 2 O 3 , and SiO. Of Ta 2 O 5 and the like, more preferably Ta 2 O 5 , CeO 2 , La 2 O
3 , a material having a composition close to that of each, particularly preferably Ta 2 O 5
Use a material with a composition close to The range of the composition is such that the content of a material having a composition close to at least one selected from the group consisting of ZnS and the like is at least 30% to 98% by mol%, and at least one selected from the group consisting of Ta 2 O 5 and the like. The content of a material having a composition close to the averager is preferably from 2% to 70% in mol%. Although only the protective layer on one side of the recording film may be made of the above material,
More preferably, the protective layers on both sides are made of the above materials. A more preferred content of a material having a composition close to at least one selected from the group consisting of Ta 2 O 5 and the like is 5% or more and 40% or less in terms of mol%. It is more preferable to provide a light reflection layer containing a metal element as a main component on the side of the recording film opposite to the light incident side, because the reproduction signal can be increased. If an adhesion improving layer containing at least one of W, Mo, and Cr as a main component is provided between the light reflecting layer and the protective layer (also referred to as an intermediate layer) on the light reflecting layer side, the number of rewritable times, etc. Is improved. This method is also effective for an optical recording medium using a protective layer other than the protective layer of the present invention. The thermal conductivity of the protective layer is preferably in the range of 15 W / m · K or less, and the thickness of the light incident side protective layer can be used up to 1000 nm, but is preferably in the range of 60 nm to 200 nm. In particular, the thermal conductivity is 1 W / m · K or more and 10 W / m · K or less, and the film thickness is about 80 nm or more and 150
nm or less is preferred. When such a protective layer is used, the effect of preventing the alteration or deformation caused by the irradiation of the recording beam is remarkable, and the decrease in the recording sensitivity is small. Thermal diffusivity is 0.23 cm 2 / sec or more 2.3 cm 2 / sec or less. The thickness of the recording film is preferably in the range of 1.5 nm to 250 nm in terms of recording sensitivity, SN ratio, and the like, and is preferably adjusted in accordance with the thickness of the upper protective layer. The thickness of the upper protective layer is 20
The range is preferably from 300 nm to 300 nm. The thickness of the light reflection layer is 2
A range from 0 nm to 300 nm is preferred. Generally, when light is applied to a thin film, the reflected light is superimposed on the reflected light from the front surface side of the thin film and the reflected light from the back surface of the thin film, causing interference. In the case of reading a signal by reflectance, it is preferable to adjust the film thickness of each of the above films to satisfy the condition that the value of reflectance is a small optimal value. This is because the contrast ratio at the time of signal reading becomes large,
This is because the recording sensitivity also increases. The product of the refractive index and the film thickness of the recording film is 120 nm or more, 600 nm or less,
The product of the refractive index and the film thickness of the lower protective layer is particularly preferably in the range from 120 nm to 400 nm. However, as for the recording film, the product of the refractive index and the film thickness of at least a part of the recording film may be within the above range. The preferable range of the product of the refractive index and the film thickness is also effective when a protective layer mainly containing an oxide, a sulfide, a selenide or a nitride not included in the present invention is provided. The extinction coefficient k of the protective layer for the laser beam used is
A recording sensitivity of 0.03 or more and 1.0 or less is preferable because of high recording sensitivity.
The strength can be further increased by providing a layer of a material or a metal layer which can be used for the above-mentioned protective layer in the vicinity of the thin film mainly containing the material made of ZnS or the like of the present invention. Since the extinction coefficient of the protective layer between the recording film and the light reflecting layer is preferably 0.1 or less, for example, in the case of an oxide, it is better to reduce oxygen defects. The oxide and the thin film containing selenium and sulfide as main components of the present invention may be formed between the recording film and the substrate, or may be provided on the side of the recording film opposite to the substrate. More preferably, it is provided on both sides. The present invention is effective not only for disk-shaped recording media but also for tape-shaped, card-shaped, and other recording media. Further, the present invention is effective not only for a phase change recording medium but also for a recording medium based on another recording principle such as a magneto-optical recording medium.
基板上に形成された記録用ビームの照射を受けて変化
を生ずる情報記録用部材において、保護層材料として、
例えば、ZnSとTa2O5からなる材料を用いると、記録用ビ
ームの照射を受けても、上記保護層と記録膜の熱膨張係
数が同程度であり、膜自身の機械的強度が強く、変形し
にくいため、部材の変質、変形が防止できかつ耐熱性に
も優れた情報記録用部材を得ることができる。In the information recording member which changes upon receiving the irradiation of the recording beam formed on the substrate, as a protective layer material,
For example, when a material composed of ZnS and Ta 2 O 5 is used, even when irradiated with a recording beam, the thermal expansion coefficients of the protective layer and the recording film are substantially the same, and the mechanical strength of the film itself is strong, Since the member is hardly deformed, it is possible to obtain an information recording member which can prevent deterioration and deformation of the member and has excellent heat resistance.
以下、本発明の一実施例を第１図により説明する。 まず、案内溝を有する基板１（ポリカーボネート、直
径130mm、厚さ1.2mm）に、本発明の保護層のZnSを主成
分とする薄膜として(ZnS)80(Ta2O5)20に近い組成の薄膜
２（約100nm）をマグネトロンスパッタリングにより積
層する。その後、記録用ビームの照射を受けてほとんど
変形を伴わないで原子配列変化を生ずるGe−Sb−Te系情
報記録用薄膜３（厚さ約30nm）、続いて(ZnS)80(Ta2O5)
20に近い組成の中間層４（厚さ約30nm）を積層し、さら
に金属元素を主成分とする薄膜５としてNi−Crの薄膜
（約80nm）を積層した。 次に紫外線の照射により硬化する樹脂６を用いて、紫
外線に約２分間露光し、前記金属元素を主成分とする薄
膜５と保護板７（直径130mm、厚さ1.2mm）を貼りあわせ
た。次に、上記の情報記録用薄膜３に基板１側（紙面上
で下方）より記録用レーザビームを照射し、情報の記録
を行った。 次に、上記の情報記録用薄膜３に情報を記録した部分
の上記の樹脂６と薄膜５を上記保護板７側（図の上方）
より、また、上記ZnSを主成分とする保護層の薄膜２を
上記基板１側（図の下方）より顕微鏡（×400倍）で観
察し、上記樹脂保護層、および基板に変質および変形が
生じていないことを確認した。 本実施例の(ZnS)80(Ta2O5)20に近い組成の基板側保護
層の膜厚を変化させたとき、記録に必要なレーザパワー
と100回記録書き換え後の雑音レベルは次のように変化
した。 上記の金属元素を主成分とする薄膜５のAuの一部また
は全部をAl,Cu,Ag,Mg,Si,Ca,Ti,V,Cr,Mn,Fe,Co,Zn,Zr,N
b,Mo,Rh,Zr,Pd,Sn,Sb,Te,Ta,W,Ir,Pt,Pb,およびBiより
成る群より選ばれた少なくとも一者を主成分とする金属
で置き換えても同様の特性が得られた。例えばTi−Al合
金を用いると記録感度が向上した。Cu−Ag合金、Al−Mg
合金では消去特性が向上した。 上記の金属元素を主成分とする薄膜５が反射率が高
い、熱伝導率が高いなどの特長を持つが接着性の悪いAu
などの場合、中間層４との間に接着性改良層としてCr,M
o,Wのうちの少なくとも一元素を主成分とする膜を設け
ると、SN比の劣化なしに書き換えできる回数が２倍以上
に向上した。この膜厚は1nm以上20nm以下が好ましい。
薄すぎると効果が無く、厚い場合は２層膜にしてAuなど
の長所を生かすことができずCrなどの単層膜に近い特性
となる。 また、上記の(ZnS)80(Ta2O5)20の薄膜のZnSの一部ま
たは全部を、ZnSe,CdS,CdSeおよびInSよりなる群より選
ばれた少なくとも一元素で置き換えてもほぼ同様な特性
が得られた。これらのうち、InSは毒性が低く、スパッ
タリング効率が高いという長所がある。また、上記の保
護層の(ZnS)80(Ta2O5)20の薄膜のTa2O5の一部または全
部をCu2O，WO3，MoO3，CeO2，La2O3およびSiOに近い組
成の材料より成る群より選ばれた少なくとも一者で置き
換えてもほぼ同様の結果が得られる。 ZnSなどよりなる群より選ばれた少なくとも一者より
なる材料の含有量はモル％で30％以上98％以下、Ta2O5
などより成る群より選ばれた少なくとも一者より成る材
料の含有量はモル％で２％以上70％以下が好ましい。Zn
Sなどよりなる群より選ばれた少なくとも一者よりなる
材料の含有量が上記の範囲より少ない場合は、記録感度
および再生信号のSN比が低くなり、多い場合にはスパッ
タ室内の剥離によってディスク上の欠陥が増加した。 上記ZnSなどを主成分とする薄膜のTa2O5の代わりに下
記の化合物を用いたとき、記録に必要なレーザパワーで
100回記録書き換え後、ピンホールによる欠陥密度は次
のように変化した。 化合物 欠陥密度 Ta2O5 ５個／cm2 CeO2 ８個／cm2 La2O3 ８個／cm2 Cu2O 10個／cm2 MoO3 20個／cm2 WO3 20個／cm2 SiO 40個／cm2 本発明の化合物及び従来から知られている化合物の80
℃95％の相対湿度中に1000時間保管後のピンホールによ
る欠陥密度は次のとおりであった。 化合物 欠陥密度 Ta2O5 ６個／cm2 CeO2 ８個／cm2 La2O3 ８個／cm2 Cu2O 10個／cm2 SiO2 30個／cm2 GeO2 50個／cm2 Al2O3 50個／cm2 T2O5の代わりにCu2S、またはCu2Seに近い組成の材料
を用いた場合、保護層の屈折率が高くなるために膜厚制
御が難しくなったが、記録膜との熱膨張係数のマッチン
グの点では優れている。 上記のTa2O5の含有量を変えたとき、欠陥密度は次のよ
うに変化した。 含有量 欠陥密度 0％ 100個／cm2 2％ 20個／cm2 5％ ５個／cm2 40％ ５個／cm2 70％ ５個／cm2 上記のTa2O5の含有量を変えた時、再生信号の搬送波対
雑音比は次のように変化した。 含有量 搬送波対雑音比 20％ 55dB 40％ 50dB 70％ 46dB 80％ 40dB 本実施例の保護層の熱伝導率は15W/m・Ｋ以下の範囲
が好ましく、特に、熱伝導率が1W/m・Ｋ以上10m・Ｋ以
下が好ましい。熱伝導率の異なる材質を用いた場合、記
録レーザパワーと再生波形歪みを表わす第二次高調波は
次のように変化した。 また、記録膜の非晶質に近い状態の部分の屈折率と膜
厚の積が120nm以上、600nm以下、基板側保護層の屈折率
と膜厚の積が120nm以上400nm以下、中間層の屈折率と膜
厚の積が40nm以上、600nm以下の範囲で再生信号CN比46d
B以上が得られた。記録膜の結晶状態の部分の屈折率と
膜厚の積が上記の範囲内に有るようにしても差し支えな
い。中間層を形成しない場合は、記録感度が約50％低下
するが、他の特性に大きな変化は無く、使用可能であっ
た。 第３図に示すように、従来のSi−Ｎ系保護層を用いた
場合は105回の情報の書換えによってノイズレベル（図
中Ｂ）が10dB増加したが、本発明の保護層にZnSを主成
分とする薄膜を導入することによって、ノイズレベル
（図中Ａ）はほとんど変化せず、消え残りも少ないこと
がわかった。 第２図に示したように、ガラスまたは金属基板９上に
形成した紫外線硬化樹脂層の表面に案内溝を形成し、そ
の上に第１図のディスクと同様な記録層を順序を逆に
（金属元素を主成分とする薄膜５から）構成し、保護板
と貼り合せずに使用しても、ほぼ同様な効果が得られ
た。ただし、この場合はレーザ光は基板とは反対の側か
ら入射させた。Hereinafter, an embodiment of the present invention will be described with reference to FIG. First, on a substrate 1 having a guide groove (polycarbonate, diameter 130 mm, thickness 1.2 mm), a protective layer of the present invention having a composition close to (ZnS) 80 (Ta 2 O 5 ) 20 as a thin film containing ZnS as a main component. The thin film 2 (about 100 nm) is laminated by magnetron sputtering. Thereafter, a Ge-Sb-Te-based information recording thin film 3 (about 30 nm in thickness) which undergoes an atomic arrangement change with almost no deformation by being irradiated with a recording beam, and then (ZnS) 80 (Ta 2 O 5 )
An intermediate layer 4 having a composition close to 20 (thickness: about 30 nm) was laminated, and a Ni—Cr thin film (about 80 nm) was further laminated as a thin film 5 mainly containing a metal element. Next, using a resin 6 that is cured by irradiation with ultraviolet light, the resin 6 was exposed to ultraviolet light for about 2 minutes, and the thin film 5 containing the metal element as a main component and the protective plate 7 (130 mm in diameter and 1.2 mm in thickness) were bonded together. Next, the information recording thin film 3 was irradiated with a recording laser beam from the substrate 1 side (downward on the paper) to record information. Next, the resin 6 and the thin film 5 at the portion where information was recorded on the information recording thin film 3 were placed on the protective plate 7 side (upper side in the figure).
Further, the thin film 2 of the protective layer containing ZnS as a main component was observed with a microscope (× 400) from the substrate 1 side (the lower part of the figure), and the resin protective layer and the substrate were deteriorated and deformed. Not sure that. When the thickness of the substrate-side protective layer having a composition close to (ZnS) 80 (Ta 2 O 5 ) 20 in this example was changed, the laser power required for recording and the noise level after 100 times recording / rewriting were as follows. Changed. Al, Cu, Ag, Mg, Si, Ca, Ti, V, Cr, Mn, Fe, Co, Zn, Zr, N
The same applies when the metal is replaced by a metal containing at least one selected from the group consisting of b, Mo, Rh, Zr, Pd, Sn, Sb, Te, Ta, W, Ir, Pt, Pb, and Bi. Characteristics were obtained. For example, when a Ti-Al alloy was used, the recording sensitivity was improved. Cu-Ag alloy, Al-Mg
The erasing characteristics of the alloy were improved. The thin film 5 containing the above-described metal element as a main component has features such as high reflectance and high thermal conductivity, but has poor adhesion.
In such a case, a Cr, M
By providing a film containing at least one element of o and W as a main component, the number of times that rewriting can be performed without deterioration of the S / N ratio has been more than doubled. The thickness is preferably 1 nm or more and 20 nm or less.
If it is too thin, there is no effect, and if it is too thick, it is not possible to make use of the advantages of Au or the like with a two-layer film and the characteristics are close to those of a single layer film of Cr or the like. In addition, almost the same is true even if part or all of ZnS in the thin film of (ZnS) 80 (Ta 2 O 5 ) 20 is replaced with at least one element selected from the group consisting of ZnSe, CdS, CdSe and InS. Characteristics were obtained. Among them, InS has advantages of low toxicity and high sputtering efficiency. Further, part or all of Ta 2 O 5 of the thin film of (ZnS) 80 (Ta 2 O 5 ) 20 of the above-mentioned protective layer is replaced with Cu 2 O, WO 3 , MoO 3 , CeO 2 , La 2 O 3 and SiO 2. Substantially the same result can be obtained by replacing with at least one member selected from the group consisting of materials having compositions close to the above. The content of at least one material selected from the group consisting of ZnS and the like is 30% or more and 98% or less in terms of mol%, and Ta 2 O 5
The content of the material composed of at least one member selected from the group consisting of, for example, is preferably from 2% to 70% by mol%. Zn
If the content of at least one material selected from the group consisting of S and the like is less than the above range, the recording sensitivity and the S / N ratio of the reproduced signal will be low. The defects increased. When the following compound was used in place of Ta 2 O 5 of the thin film containing ZnS as the main component, the laser power required for recording was
After recording and rewriting 100 times, the defect density due to the pinhole changed as follows. Compound Defect density Ta 2 O 5 5 / cm 2 CeO 2 8 / cm 2 La 2 O 3 8 / cm 2 Cu 2 O 10 / cm 2 MoO 3 20 / cm 2 WO 3 20 / cm 2 SiO 40 / cm 2 80 of the compound of the present invention and the conventionally known compound
The defect density due to pinholes after storage for 1000 hours in a relative humidity of 95 ° C. was as follows. Compound Defect density Ta 2 O 5 6 / cm 2 CeO 2 8 / cm 2 La 2 O 3 8 / cm 2 Cu 2 O 10 / cm 2 SiO 2 30 / cm 2 GeO 2 50 / cm 2 When a material having a composition close to Cu 2 S or Cu 2 Se is used instead of 50 Al 2 O 3 / cm 2 T 2 O 5 , it is difficult to control the film thickness because the refractive index of the protective layer becomes high. However, it is excellent in matching the thermal expansion coefficient with the recording film. When the content of Ta 2 O 5 was changed, the defect density changed as follows. Content Defect density 0% 100 / cm 2 2% 20 / cm 2 5% 5 / cm 2 40% 5 / cm 2 70% 5 / cm 2 Change the content of Ta 2 O 5 above. Then, the carrier-to-noise ratio of the reproduced signal changed as follows. Content Carrier-to-noise ratio 20% 55dB 40% 50dB 70% 46dB 80% 40dB The thermal conductivity of the protective layer of this embodiment is preferably in the range of 15 W / m · K or less, and particularly, the thermal conductivity is 1 W / m · K. It is preferably from K to 10 m · K. When materials having different thermal conductivities were used, the recording laser power and the second harmonic representing the reproduction waveform distortion changed as follows. In addition, the product of the refractive index and the film thickness of the portion of the recording film in a state close to the amorphous state is 120 nm or more and 600 nm or less, the product of the refractive index and the film thickness of the substrate-side protective layer is 120 nm or more and 400 nm or less, and the refractive index of the intermediate layer. When the product of the ratio and the film thickness is 40 nm or more and 600 nm or less, the reproduction signal CN ratio is 46 d.
B or more was obtained. The product of the refractive index and the film thickness of the crystalline portion of the recording film may be within the above range. When the intermediate layer was not formed, the recording sensitivity was reduced by about 50%, but the other characteristics were not significantly changed and could be used. As shown in FIG. 3, the noise level by rewriting the case of using the conventional Si-N-based protective layer 10 5 times information (figure B) is increased 10 dB, a ZnS protective layer of the present invention It was found that the noise level (A in the figure) hardly changed and the disappearance was small by introducing a thin film as a main component. As shown in FIG. 2, a guide groove is formed on the surface of the ultraviolet curable resin layer formed on the glass or metal substrate 9, and a recording layer similar to the disk shown in FIG. Almost the same effect was obtained even when using the thin film 5 composed mainly of a metal element) and using it without bonding it to the protective plate. However, in this case, the laser light was incident from the side opposite to the substrate.
本発明によれば、耐湿性に優れていて欠陥が少なく、
層間が剥離したりすることがない。According to the present invention, excellent in moisture resistance, few defects,
There is no separation between layers.
【図面の簡単な説明】 第１図は案内溝を有する、樹脂基板を用いた本発明の記
録用部材の一実施例の構成を示す断面図、第２図は案内
溝を有する基板を用いた本発明の記録用部材の他の一実
施例の構成を示す断面図、第３図は本発明の記録用部材
による情報の書換え回数に対するノイズレベルの変化を
示す図である。 符号の説明 １……案内溝を有する基板、２、13……保護層、３、12
……情報記録用薄膜、４、11……上部保護層、５、10…
…金属元素を主成分とする薄膜、６、14……樹脂、７、
15……保護板、９……ガラス基板、Ａ……本発明のノイ
ズレベル、Ｂ……従来のノイズレベルBRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a configuration of an embodiment of a recording member of the present invention using a resin substrate having a guide groove, and FIG. 2 uses a substrate having a guide groove. FIG. 3 is a cross-sectional view showing the configuration of another embodiment of the recording member of the present invention, and FIG. 3 is a diagram showing a change in noise level with respect to the number of times information is rewritten by the recording member of the present invention. DESCRIPTION OF SYMBOLS 1 ... Substrate having guide groove, 2, 13 ... Protective layer, 3, 12
…… Information recording thin film, 4, 11 …… Upper protective layer, 5,10…
... thin film mainly composed of a metal element, 6, 14 ... resin, 7,
15: Protective plate, 9: Glass substrate, A: Noise level of the present invention, B: Conventional noise level
───────────────────────────────────────────────────── フロントページの続き (72)発明者 安藤 圭吉 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (56)参考文献 特開 昭63−276724（ＪＰ，Ａ) 特開 昭62−222445（ＪＰ，Ａ) 特開 平３−125344（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) G11B 7/24 G11B 11/10 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Keikichi Ando 1-280 Higashi Koikebo, Kokubunji-shi, Tokyo Inside the Central Research Laboratory of Hitachi, Ltd. (56) References JP-A-63-276724 (JP, A) JP-A Sho 62-222445 (JP, A) JP-A-3-125344 (JP, A) (58) Fields investigated (Int. Cl. 6 , DB name) G11B 7/24 G11B 11/10
Claims (5)
する記録膜の少なくとも一方の面に隣接して、ZnS,ZnS
e,CdS,CdSeおよびInSよりなる群（以下、この群をZnSな
どからなる群という）より選ばれた少なくとも一者に近
い組成の材料と、Ta2O5、Cu2O，WO3，MoO3，CeO2、La2O
3，およびSiOより成る群（以下、この群をTa2O5などか
らなる群という）より選ばれた少なくとも一者に近い組
成の材料との混合組成（但し、ZnSとSiOとの混合組成及
び硫化物と希土類酸化物との混合組成を除く）の保護層
を有することを特徴とする情報記録用部材。1. A recording medium according to claim 1, wherein said recording film is irradiated with a recording energy beam.
a material having a composition close to at least one selected from the group consisting of e, CdS, CdSe, and InS (hereinafter, this group is referred to as a group consisting of ZnS, etc.), and Ta 2 O 5 , Cu 2 O, WO 3 , and MoO 3 , CeO 2 , La 2 O
3 and a mixed composition with a material having a composition close to at least one selected from the group consisting of SiO (hereinafter, this group is referred to as a group consisting of Ta 2 O 5, etc.) An information recording member having a protective layer (excluding a mixed composition of sulfide and rare earth oxide).
ル％で30％以上98％以下，Ta2O5などより成る群の材料
の含有量はモル％で２％以上70％以下であることを特徴
とする特許請求の範囲第１項に記載の情報記録用部材。2. The content of the material of the group consisting of ZnS or the like is 30% or more and 98% or less in mol%, and the content of the material of the group consisting of Ta 2 O 5 or the like is 2% or more and 70% or less in mol%. 2. The information recording member according to claim 1, wherein:
は絶対温度）以下であることを特徴とする特許請求の範
囲第１項，および第２項に記載の情報記録用部材。3. The thermal conductivity of the protective layer is 15 W / m · K (K
3. The information recording member according to claim 1, wherein the temperature is not more than (absolute temperature).
する記録膜の少なくとも一方の面に隣接して、ZnSをモ
ル％で30％以上98％以下及びTa2O5をモル％で２％以上7
0％以下含有する保護層を有することを特徴とする情報
記録用部材。4. Adjacent to at least one surface of a recording film which is changed by irradiation with a recording energy beam, ZnS is 30% or more and 98% or less in mol% and Ta 2 O 5 is 2% in mol%. More than 7
An information recording member having a protective layer containing 0% or less.
の範囲第１項乃至第４項のいずれかに記載の情報記録用
部材とを有し、 上記保護層を上記記録膜と上記基板との間に配置したこ
とを特徴とするディスク状記録媒体。5. A recording medium comprising: a substrate; and an information recording member according to any one of claims 1 to 4 formed on the substrate. A disc-shaped recording medium disposed between the substrate and the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2233280A JP2915112B2 (en) | 1990-09-05 | 1990-09-05 | Information recording member and disk recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2233280A JP2915112B2 (en) | 1990-09-05 | 1990-09-05 | Information recording member and disk recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04114330A JPH04114330A (en) | 1992-04-15 |
| JP2915112B2 true JP2915112B2 (en) | 1999-07-05 |
Family
ID=16952619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2233280A Expired - Fee Related JP2915112B2 (en) | 1990-09-05 | 1990-09-05 | Information recording member and disk recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2915112B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3347143B2 (en) * | 1992-12-14 | 2002-11-20 | 大東電機工業株式会社 | Roller massage machine |
| US5902258A (en) * | 1995-12-15 | 1999-05-11 | Cziriak; Attila | Massage device |
| US5868688A (en) * | 1996-01-22 | 1999-02-09 | Yonitech Laboratories Ltd. | Foot massaging appliance |
| JP3190274B2 (en) * | 1996-12-28 | 2001-07-23 | ティーディーケイ株式会社 | Optical recording medium and manufacturing method thereof |
| US5984883A (en) * | 1997-04-08 | 1999-11-16 | Elnar; Joseph G. | Neck massager for use in spas |
-
1990
- 1990-09-05 JP JP2233280A patent/JP2915112B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04114330A (en) | 1992-04-15 |
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