JPH03262318A - Delay circuit - Google Patents

Delay circuit

Info

Publication number
JPH03262318A
JPH03262318A JP2062952A JP6295290A JPH03262318A JP H03262318 A JPH03262318 A JP H03262318A JP 2062952 A JP2062952 A JP 2062952A JP 6295290 A JP6295290 A JP 6295290A JP H03262318 A JPH03262318 A JP H03262318A
Authority
JP
Japan
Prior art keywords
channel mos
mos transistor
terminal
delay
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2062952A
Other languages
Japanese (ja)
Inventor
Yuriko Komaki
小牧 百合子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2062952A priority Critical patent/JPH03262318A/en
Publication of JPH03262318A publication Critical patent/JPH03262318A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To select an optional analog delay by using a control terminal employing an N-channel MOS transistor(TR) so as to control an input voltage at a control terminal. CONSTITUTION:The source of a P-channel MOS TR 5 is connected to a power terminal 3, the source of an N-channel MOS TR 6 is connected to the drain of an N-channel MOS TR 7, the source of the N-channel MOS TR 7 is connected to a ground terminal 8, the gates of the P-channel MOS TR 5 and the N-channel MOS TR 6 are connected to an input terminal 1 and the gate of the N-channel MOS TR 7 is connected to a control terminal 2 respectively. Moreover, the drain of the P-channel MOS TR 5 and the drain of the N-channel MOS TR 6 are connected together to an output terminal 4. Thus, a delay circuit is used as one unit and two units are connected in series. Then a 1st delay circuit gives a delay for the falling and the 2nd delay circuit gives a delay for the rising respectively and optionally with respect to the original input waveform.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はCMO3構造の遅延回路に関し、特に外部から
遅延量の設定が可能な遅延回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a CMO3 structure delay circuit, and particularly to a delay circuit whose delay amount can be set externally.

〔従来の技術〕[Conventional technology]

従来、この種の遅延回路は、第3図に示すような反転回
路構成を単位として数個タンデムに接続されており、遅
延量は固定、又は第4図のようにディジタル的にあらか
じめ決められている遅延量の中から選択して使用されて
いた。
Conventionally, several delay circuits of this type have been connected in tandem, each having an inversion circuit configuration as shown in Figure 3, and the amount of delay has been fixed or predetermined digitally as shown in Figure 4. The amount of delay was selected and used.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の遅延回路では、あらかじめ定められた遅
延量しか与えられない、又は、ディジタル的に変化させ
た遅延量しか得らべない為、アナログ的に任意に遅延量
の調整を行なうことができないという欠点があった。
The conventional delay circuits described above can only provide a predetermined amount of delay, or can only obtain a delay amount that is changed digitally, so it is not possible to arbitrarily adjust the amount of delay using an analog method. There was a drawback.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の遅延回路は、入力端子、出力端子、制御用端子
、PチャネルMOSトランジスタフ第1のNチャネルM
OSトランジスタ及び第2のNチャネルMOSトランジ
スタを有し、前記PチャネルMOS)−ランジスタのソ
ースを電源端子に、前記第1のNチャネルMoSトラン
ジスタのソースを前記第2のNチャネルMOSトランジ
スタのドレインに、前記第2のNチャネルMOSトラン
ジスタのソースを接地端子に、前記PチャネルMOSト
ランジスタ及び前記第1のNチャネルMOSトランジス
タのゲートを前記入力端子に、前記第2のNチャネルM
OSトランジスタのゲートを前記制御用端子に接続し、
前記PチャネルMOSトランジスタ及び第1のNチャネ
ルMOSトランジスタのドレインを互いに接続して前記
出力端子に導出して構成される。
The delay circuit of the present invention includes an input terminal, an output terminal, a control terminal, a P-channel MOS transistor, and a first N-channel MOS transistor.
an OS transistor and a second N-channel MOS transistor, the source of the P-channel MOS transistor is connected to the power supply terminal, and the source of the first N-channel MoS transistor is connected to the drain of the second N-channel MOS transistor. , the source of the second N-channel MOS transistor is connected to the ground terminal, the gates of the P-channel MOS transistor and the first N-channel MOS transistor are connected to the input terminal, and the second N-channel MOS transistor
Connecting the gate of the OS transistor to the control terminal,
The drains of the P-channel MOS transistor and the first N-channel MOS transistor are connected to each other and led to the output terminal.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例を示す回路図である。FIG. 1 is a circuit diagram showing one embodiment of the present invention.

PチャネルMOSトランジスタ5のソースは電源端子3
に、NチャネルMOSトランジスタロのソースはNチャ
ネルMOSトランジスタフのドレインに、NチャネルM
OSトランジスタ7のソースは接地端子8に、Pチャネ
ルMOSトランジスタ5とNチャネルMOSトランジス
タ6とのゲートは入力端子1に、又、NチャネルMOS
トランジスタフのゲートは制御用端子2に各々接続され
、更に、PチャネルMOSトランジスタ5のドレイン及
びNチャネルMOSトランジスタ6のトレインは互いに
接続して出力端子4に接続している。
The source of P-channel MOS transistor 5 is power supply terminal 3
In addition, the source of N-channel MOS transistor RO is connected to the drain of N-channel MOS transistor OFF, and N-channel MOS transistor RO is connected to the drain of N-channel MOS transistor OFF.
The source of the OS transistor 7 is connected to the ground terminal 8, the gates of the P channel MOS transistor 5 and the N channel MOS transistor 6 are connected to the input terminal 1, and the N channel MOS
The gates of the transistors are connected to the control terminal 2, and the drain of the P-channel MOS transistor 5 and the train of the N-channel MOS transistor 6 are connected to each other and connected to the output terminal 4.

第1図に示した回路構成をとり、制御用端子2に印加す
る電圧Cを第2図に示したように変化させてNチャネル
MOSトランジスタロに充電された電荷の放電時間を制
御することにより、出力端子4に現われる波形0TJT
の立ち下りの遅延量が変化する。
By taking the circuit configuration shown in FIG. 1 and changing the voltage C applied to the control terminal 2 as shown in FIG. 2, the discharge time of the charge charged in the N-channel MOS transistor is controlled. , the waveform 0TJT appearing at output terminal 4
The amount of delay in the falling edge of is changed.

第1図の遅延回路を1つの単位としてシリアルに2つ接
続すれば、元の入力波形に対し、第1番目の遅延回路で
立ち下りの、第2番目の遅延回路で立ち上りの遅延量を
各々任意に与えることができる。
If two delay circuits in Figure 1 are connected serially as one unit, the first delay circuit will delay the falling edge of the original input waveform, and the second delay circuit will delay the rising edge, respectively. Can be given arbitrarily.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、NチャネルMOSトラン
ジスタを用いた制御端子を使用することにより、制御端
子の入力電圧の制御を行ないアナログ的に任意の遅延量
を選択することができるという効果がある。
As explained above, the present invention has the effect that by using a control terminal using an N-channel MOS transistor, the input voltage of the control terminal can be controlled and an arbitrary delay amount can be selected in an analog manner. .

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の回路図、第2図は第1図の
実施例のタイムチャート、第3図は従来の遅延回路の第
1の例の回路図、第4図は従来の遅延回路の第2の例の
ブロック図である。 1・・・入力端子、2・・−制御用端子、3・・・電源
端子、4・・・出力端子、5・・・PチャネルMOSト
ランジスタ、6.7・・・NチャネルMOSトランジス
タ、8・・・接地端子。
Fig. 1 is a circuit diagram of an embodiment of the present invention, Fig. 2 is a time chart of the embodiment of Fig. 1, Fig. 3 is a circuit diagram of a first example of a conventional delay circuit, and Fig. 4 is a conventional delay circuit. FIG. 3 is a block diagram of a second example of the delay circuit of FIG. DESCRIPTION OF SYMBOLS 1...Input terminal, 2...-Control terminal, 3...Power supply terminal, 4...Output terminal, 5...P channel MOS transistor, 6.7...N channel MOS transistor, 8 ...Grounding terminal.

Claims (1)

【特許請求の範囲】[Claims] 入力端子、出力端子、制御用端子、PチャネルMOSト
ランジスタ、第1のNチャネルMOSトランジスタ及び
第2のNチャネルMOSトランジスタを有し、前記Pチ
ャネルMOSトランジスタのソースを電源端子に、前記
第1のNチャネルMOSトランジスタのソースを前記第
2のNチャネルMOSトランジスタのドレインに、前記
第2のNチャネルMOSトランジスタのソースを接地端
子に、前記PチャネルMOSトランジスタ及び前記第1
のNチャネルMOSトランジスタのゲートを前記入力端
子に、前記第2のNチャネルMOSトランジスタのゲー
トを前記制御用端子に接続し、前記PチャネルMOSト
ランジスタ及び第1のNチャネルMOSトランジスタの
ドレインを互いに接続して前記出力端子に導出したこと
を特徴とする遅延回路。
It has an input terminal, an output terminal, a control terminal, a P-channel MOS transistor, a first N-channel MOS transistor, and a second N-channel MOS transistor, and the source of the P-channel MOS transistor is a power supply terminal, and the first The source of the N-channel MOS transistor is connected to the drain of the second N-channel MOS transistor, the source of the second N-channel MOS transistor is connected to the ground terminal, the P-channel MOS transistor and the first
The gate of the N-channel MOS transistor is connected to the input terminal, the gate of the second N-channel MOS transistor is connected to the control terminal, and the drains of the P-channel MOS transistor and the first N-channel MOS transistor are connected to each other. A delay circuit characterized in that the output terminal is connected to the output terminal.
JP2062952A 1990-03-13 1990-03-13 Delay circuit Pending JPH03262318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2062952A JPH03262318A (en) 1990-03-13 1990-03-13 Delay circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2062952A JPH03262318A (en) 1990-03-13 1990-03-13 Delay circuit

Publications (1)

Publication Number Publication Date
JPH03262318A true JPH03262318A (en) 1991-11-22

Family

ID=13215168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2062952A Pending JPH03262318A (en) 1990-03-13 1990-03-13 Delay circuit

Country Status (1)

Country Link
JP (1) JPH03262318A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5684423A (en) * 1991-10-09 1997-11-04 Fujitsu Limited Variable delay circuit
JPWO2008114699A1 (en) * 2007-03-21 2010-07-01 株式会社アドバンテスト Test equipment and measurement circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5684423A (en) * 1991-10-09 1997-11-04 Fujitsu Limited Variable delay circuit
JPWO2008114699A1 (en) * 2007-03-21 2010-07-01 株式会社アドバンテスト Test equipment and measurement circuit

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