JPH0325989A - Single axis mode semiconductor laser characteristic measuring apparatus - Google Patents
Single axis mode semiconductor laser characteristic measuring apparatusInfo
- Publication number
- JPH0325989A JPH0325989A JP16145689A JP16145689A JPH0325989A JP H0325989 A JPH0325989 A JP H0325989A JP 16145689 A JP16145689 A JP 16145689A JP 16145689 A JP16145689 A JP 16145689A JP H0325989 A JPH0325989 A JP H0325989A
- Authority
- JP
- Japan
- Prior art keywords
- band
- semiconductor laser
- pass filter
- measured
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 238000001228 spectrum Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 description 16
- 230000010355 oscillation Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000010363 phase shift Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 241000283162 Inia geoffrensis Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000010187 selection method Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、単一軸モード半導体レーザの特性測定装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a characteristic measuring device for a single-axis mode semiconductor laser.
幹線系光通信の伝送速度および中継距離が増大するのに
伴い、ファイバの持つ波長分散による伝送波形劣化を回
避する目的で、従来の多軸モード発振するファブリ・ペ
ロ（ Ｆａｂｒｙ−Ｐｅｒｏｔ ）型半導体レーザに代
って単一軸モードで発振する分布帰還型半導体レーザ（
ｄｉｓｔｒｉｂｕｔｅｄ ｆｅｅｄｂａｃｋ ｌａｓ
ｅｒｄｉｏｄｅ，以下ＤＦＢ ＬＤと略称）が用いられ
るようになってきた．このＤＦＢ ＬＤは、結晶内部に
有する回折格子周期が均一ないわゆる均一回折格子型の
ものと、共振器の一部に通常媒質内波長の１／４に相当
する位相シフト領域を有するいわゆる位相シフト型のも
のに大別され、理論的に予測される単一軸モード発振確
率は後者の方が高く、素子設計パラメータの設定によっ
てはその確率は非常に１に近くなり得る。しかし実際の
素子作成においては、実現された素子パラメータが製造
上のばらつきを有するため、製作された素子のすべてが
単一軸モード発振をするとは限らない。加えて単一軸モ
ード半導体レーザにおいては、注入キャリアにより軸方
向空間的ホール・バーニング（ｈｏｌｅ−ｂｕｒｎｉｎ
ｇ）現象によって電界分布が変形して、副モード発振を
惹起する場合もあり、従って個々の素子に対する単一軸
モード特性の選別が必要である。As the transmission speed and relay distance of trunk optical communications increases, conventional Fabry-Perot semiconductor lasers with multi-axis mode oscillation are being used to avoid deterioration of transmission waveforms due to wavelength dispersion of fibers. A distributed feedback semiconductor laser that oscillates in a single-axis mode instead of
distributed feedback las
(hereinafter abbreviated as DFB LD) has come to be used. These DFB LDs are of the so-called uniform diffraction grating type, which has a uniform diffraction grating period inside the crystal, and the so-called phase shift type, which has a phase shift region corresponding to 1/4 of the wavelength in the normal medium in a part of the resonator. The theoretically predicted single-axis mode oscillation probability is higher in the latter, and depending on the settings of element design parameters, the probability can be very close to 1. However, in actual device fabrication, the realized device parameters have manufacturing variations, so not all fabricated devices will oscillate in a single-axis mode. In addition, in single-axis mode semiconductor lasers, injected carriers cause axial spatial hole-burning (hole-burning).
g) The electric field distribution may change due to the phenomenon, causing sub-mode oscillation. Therefore, it is necessary to select the single-axis mode characteristics for each element.
上述したように ＤＦＢ Ｉ、Ｄに対しては、素子ごと
に単一軸モード特性を選別する必要があり、基本的には
製品最終形態、例えばファイバ付モジュールの形で選別
が実施される。その手法としては所期の光出力における
発振スペクトルを分解能Ｏ．ｌｎｍ程度の分光器を用い
て測定し、所要の副モード抑圧比が得られていることを
確認するのが一般的である。一方、パッケージやその他
部材や組立調整工数等のコスト低減を目的として、チッ
プ段階である程度のｉ選別を実施するのが望ましい。そ
の際の光学調．整の簡便さ、温度変動による光軸ずれ、
処理能力を考慮すると、上述のような分解能を確保した
スペクトル特性測定は現実的でないため、第８図のブロ
ック・ダイヤグラムに示す測定系を用いて軸モード特性
の不安定性に起因して生ずる注入電流対光出力特性曲線
上の変曲点いわゆるＬ−１キンク（ｋｉｎｋ）を観測す
ることで代用していたく第９図〉。As mentioned above, for DFB I and D, it is necessary to select the single-axis mode characteristics for each element, and the selection is basically performed in the final product form, for example, in the form of a fiber-equipped module. The method is to measure the oscillation spectrum at the desired optical output with a resolution of O. It is common to measure using a spectrometer of about 1 nm to confirm that the required sub-mode suppression ratio is obtained. On the other hand, for the purpose of reducing the cost of packages, other components, assembly and adjustment man-hours, etc., it is desirable to perform i-selection to some extent at the chip stage. Optical condition at that time. Easy adjustment, optical axis deviation due to temperature fluctuation,
Considering the processing capacity, it is not realistic to measure the spectral characteristics with the above-mentioned resolution, so we used the measurement system shown in the block diagram in Figure 8 to measure the injection current caused by the instability of the axial mode characteristics. This can be substituted by observing the inflection point, so-called L-1 kink, on the light output characteristic curve (Fig. 9).
しかし実際の素子では、副モード発振やモードジャンプ
を生ずるにもかかわらすＬ−Ｉキンク現象が顕著に現れ
ない場合もあり、上述の選別法は必ずしも十分ではない
。また前述した空間的ホール・バーニング現象に伴うＬ
−１キングは発振閾値近傍にも生じ易いため、判別が難
しいという欠点もある。さらに、素子に要求される動作
温度範囲が数十゜Ｃと広い場合には温度を変化させなが
ら多数回の繰り返し観測を必要とし、作業時間の増加を
余儀なくされるという欠点を有している。However, in actual devices, there are cases where the L-I kink phenomenon does not appear conspicuously even though sub-mode oscillation or mode jump occurs, and the above-mentioned selection method is not necessarily sufficient. In addition, L due to the spatial hole burning phenomenon mentioned above.
Since −1 king tends to occur near the oscillation threshold, it also has the disadvantage that it is difficult to distinguish. Furthermore, when the operating temperature range required for the device is as wide as several tens of degrees Celsius, it is necessary to carry out repeated observations many times while changing the temperature, which has the disadvantage of unavoidably increasing the working time.
本発明の単一軸モード半導体レーザの特性測定装置は、
帯域中心波長と透過帯域幅が各々独立に制御可能なバン
ド・バス・フィルタ機能を有する入力光観測部と、被測
定半導体レーザの温度制御機構を有しており、あるいは
それに加えて被測定半導体レーザの温度注入電流および
観測された光出力の３種のパラメータのうちひとつを一
定値に保った状態で他のふたつのパラメータ相互間の相
関を測定することができる機能を有しており、あるいは
それに加えて前記３種のパラメータのうちの任意のふた
つを選んで２次元直交座標表示することができ、あるい
はまた３種のパラメータを３次元直交座標表示すること
ができる機能を有している。The device for measuring characteristics of a single-axis mode semiconductor laser according to the present invention includes:
It has an input light observation section that has a band pass filter function that allows the band center wavelength and transmission bandwidth to be independently controlled, and a temperature control mechanism for the semiconductor laser to be measured, or in addition, it has a temperature control mechanism for the semiconductor laser to be measured. It has a function that can measure the correlation between the other two parameters while keeping one of the three parameters, the temperature injection current and the observed optical output, at a constant value, or In addition, it has the function of being able to select any two of the three types of parameters and displaying them in two-dimensional orthogonal coordinates, or to display the three types of parameters in three-dimensional orthogonal coordinates.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例のブロック・ダイアダラ
ムである。被測定素子１に対して電源２から電流■，が
供給され、また温度調節器３により被測定素子１の温度
Ｔａが制御される。光出力Ｌは光学系４を介して光学的
バンド・バス・フィルタ５へ導かれる。このバンド・パ
ス・フィルタ５の帯域中心波長λ。と透過帯域幅Ｗは各
々独立に設定可能である。バンド・パス・フィルタ５を
透過した光Ｐｄは光一電流変換部６で電流に変換される
。これらの３種のパラメータＩｆ Ｔ．およびＰｄは
各々結合系によって制御部７に統合され、必要に応じて
表示部８に表示される。FIG. 1 is a block diaphragm of a first embodiment of the invention. A current (1) is supplied from a power source 2 to the device under test 1, and a temperature Ta of the device under test 1 is controlled by a temperature regulator 3. The light output L is guided via an optical system 4 to an optical bandpass filter 5 . The band center wavelength λ of this band pass filter 5. and transmission bandwidth W can be set independently. The light Pd transmitted through the band pass filter 5 is converted into a current by a photo-current converter 6. These three parameters IfT. and Pd are each integrated into the control section 7 by a coupling system, and displayed on the display section 8 as necessary.
第１図のブロック・ダイアダラムを具体的に示したのが
第２図である。被測定素子の出力光■一はファイバ４１
によりスリット５１１に導かれ、これを通過して光は回
折格子５２により回折されてその一部がスリット５１２
によって選択されてホトダイオード６ｌに入射して電流
に変換される。FIG. 2 specifically shows the block diadarum of FIG. 1. Output light of the device under test ■One is the fiber 41
After passing through this, the light is diffracted by a diffraction grating 52 and a part of it is guided to a slit 511.
is selected, enters the photodiode 6l, and is converted into a current.
ここで上述の帯域中心波長λ。と透過帯域幅Ｗは各々回
折格子５２の回転角およびスリット５ １ １ ，５１
２の開口幅により決定される。Here, the band center wavelength λ mentioned above. and transmission bandwidth W are the rotation angle of the diffraction grating 52 and the slits 5 1 1 , 51 , respectively.
It is determined by the opening width of 2.
以上説明した装置を用いて単一軸モード半導体レーザの
特性を測定する例について述べる。単一軸モード半導体
レーザのスペクトル例を第３図に示す。主モード＾。に
対して、副モードはある程度離れて存在し、最も近傍の
±１モードでもその波長λ＋１の主モードλ。との差δ
λ＝λ。一λ，Ｉは１．３μｍ帯の位相シフト型 ＤＦ
Ｂ ＬＤで１．２ｎｍ程度、１．５５μｍ帯の位相シフ
ト型 ＤＦＲＬＤで１．５ｎｍ程度になる。今、被測定
素子が、１．３μｍ帯のＤＦＢ ＬＤであって要求され
る動作温度範囲が比較的狭く例えば、２５±５℃程度で
ある場合には、まずＴ．＝２５℃における所要の光出力
Ｌ＝１０ｍＷでの注入電流Ｉｒが５０ｍＡであったとす
ると、バント・パス・フィルタの帯域中心波長λ。を上
記駆動条件におけるスペクトルの最大モード＾。に合致
させ、透過帯域幅Ｗ−１ｎｍとして、次に■ｆを一定に
してＴ．を２０’Ｃ〜３０゜Ｃにわたって変化させる。An example of measuring the characteristics of a single-axis mode semiconductor laser using the apparatus described above will be described. FIG. 3 shows an example of the spectrum of a single-axis mode semiconductor laser. Main mode. On the other hand, the secondary modes exist at some distance, and even the nearest ±1 mode has a main mode λ with a wavelength λ+1. difference δ
λ=λ. -λ, I is a phase shift type DF in the 1.3 μm band
It is approximately 1.2 nm for BLD, and approximately 1.5 nm for phase shift type DFRLD in the 1.55 μm band. Now, if the device to be measured is a 1.3 μm band DFB LD and the required operating temperature range is relatively narrow, for example, about 25±5° C., first the T. If the injection current Ir at the required optical power L=10 mW at =25°C is 50 mA, then the band center wavelength λ of the band pass filter. is the maximum mode of the spectrum under the above driving conditions. , the transmission band width is set to W-1 nm, and then f is kept constant and T. is varied over a range of 20'C to 30°C.
ＤＦＢ ＬＤの発振スペクトルの温度依存性は約０ ．
０ ９ ｎ ｍ／ｄｅｇであるから、上述の温度範囲
においてモード・ジャンプや副モード発振を生じない素
子Ａは第５図に示したようにその光電流変換素子への光
入力Ｐｄは温度Ｔ．に対して第４図に示したＩ−Ｌ特性
を反映して単調に減少゜する特性を示すが、２５℃の低
温側で副モード発振を生ずる素子Ｂの場合はバンド・バ
ス・フィルタを透過する主モードの光Ｐ６が急激に低下
するため第５図に示すようなＰｄ−Ｔ．特性を示すため
、これを容易に判定除外することができる。The temperature dependence of the oscillation spectrum of the DFB LD is approximately 0.
0 9 nm/deg, the element A which does not cause mode jump or sub-mode oscillation in the above temperature range has a light input Pd to the photocurrent conversion element at a temperature T. However, in the case of element B, which produces secondary mode oscillation on the low temperature side of 25°C, it passes through the band pass filter. Since the main mode light P6 of the Pd-T. Since it shows the characteristics, it can be easily excluded from the judgment.
要求される温度範囲が比較的広い場合には、帯域中心波
長λ。を固定せず例えば０．０９ｎｍ／ｄｅｇで温度Ｔ
，の変化に伴って変化させてやれば、副モードを確実に
遮断でき、かつ光軸調整に過度の負担がかからないＷ〜
１．ｎｍを維持することができる。If the required temperature range is relatively wide, the band center wavelength λ. For example, without fixing the temperature T at 0.09 nm/deg
If it is changed in accordance with the change in , the secondary mode can be reliably blocked and the optical axis adjustment will not be overly burdened W~
1. nm can be maintained.
第６図は本発明の第２の実施例を示す測定結果の例であ
って、第１図において、バンド・パス・フィルタのλ。FIG. 6 is an example of measurement results showing the second embodiment of the present invention, in which λ of the band pass filter in FIG.
、Ｗを第１の実施例と同様に設定し、Ｐａ＝１０ｄＢｍ
一定となるように工，を負帰還制御して温度Ｔ，を変動
させた場合のＩｆＴ．特性である。所期の温度範囲で安
定な基本モード発振をする素子ＡのＩｆはＴａに対し単
調な増加を示すが、スペクトルの不安定な素子Ｂの場合
は、副モード発振を生ずるのに伴って、所期のＰｄを維
持するためのＩｒの値が急激に増大ずるため、これを容
易に判定除外することができる。, W are set in the same way as in the first embodiment, and Pa=10 dBm.
IfT. when the temperature T is varied by negative feedback control to keep it constant. It is a characteristic. If of element A, which exhibits stable fundamental mode oscillation in the desired temperature range, shows a monotonous increase with respect to Ta, in the case of element B, whose spectrum is unstable, as secondary mode oscillation occurs, Since the value of Ir for maintaining the Pd in the period increases rapidly, this can be easily judged and excluded.
半導体レーザは通常低出力駆動条件で実用に供されるた
め、所要の動作温度範囲における所期の光出力での特性
保証が必要であるが、この実施例では該条件下での特性
測定を直接実施できるため、第１の実施例の場合のよう
に低温側で過剰な測定マージンを必要としないという利
点がある。Semiconductor lasers are usually put into practical use under low-output driving conditions, so it is necessary to guarantee the characteristics at the desired optical output in the required operating temperature range, but in this example, the characteristics can be directly measured under these conditions. Since this method can be implemented, there is an advantage that an excessive measurement margin is not required on the low temperature side as in the case of the first embodiment.
これまでの説明では、測定結果の表示を２次元直交座標
系とした例について述べたが、３種のパラメータを３次
元直交座標系に表示してもよく、この例を第７図に示す
。被測定素子の特性を詳細に検討する際には有利な点が
多い．
〔発明の効果〕
以上説明したように本発明にかかる装置を単一軸モード
半導体レーザの特性測定に適用することにより、必要な
透過帯域幅がｎｍオーダ以上でよいため、現実的な処理
能力でもってチップ段階での単一軸モード特性選別を精
度良く実施できる効果がある。加えて単一軸モード半導
体レーザの軸モード安定性の温度、注入電流および光出
力依存性を詳細に測定・検討する上で従来装置によるも
のより視覚的に優れた測定結果表示を可能とする効果が
ある。In the explanation so far, an example has been described in which measurement results are displayed in a two-dimensional orthogonal coordinate system, but three types of parameters may also be displayed in a three-dimensional orthogonal coordinate system, and this example is shown in FIG. There are many advantages when examining the characteristics of the device under test in detail. [Effects of the Invention] As explained above, by applying the device according to the present invention to the characteristic measurement of a single-axis mode semiconductor laser, the necessary transmission bandwidth may be on the order of nm or more, so that the device can be used with practical processing power. This has the effect of allowing single-axis mode characteristic selection to be carried out with high accuracy at the chip stage. In addition, when measuring and examining in detail the temperature, injection current, and optical output dependence of the axial mode stability of single-axis mode semiconductor lasers, it is possible to display measurement results visually superior to those using conventional equipment. be.
第１図は本発明の第１．の実施例である単一軸モード半
導体レーザ特性測定装置のブロック・ダイアグラム、第
２図は第１図の実施例を具体化した概念図、第３図は単
一軸モード半導体レーザのスペクトル特性例、第４図は
単一軸モード半導体レーザの注入電流対光出力特性の温
度依存性の一例、第５図、第６図および第７図は各々第
１−図に示した系を用いて測定した単一軸モード半導体
レーザの特性例、第８図は従来の半導体レーザの注入電
流対光出力特性測定装置のブロック・ダイアダラム、第
９図は第８図の装置を用いて測定した単一軸モード半導
体レーザの特性例である。
１・・・被測定素子、２・・・電源、３・・・温度調節
器、４・・・光学系、５・・・光学的バンドパス・フィ
ルタ、６・・・光一電流変換部、７・・・制御部、８・
・・表示部、３１・・・電子冷却器、３２・・・サーミ
スタ、４１・・・ファイバ、５２・・・回折格子、６１
・・・ボトダイオード、１００・・・レーザバー、１１
２・・・プローブ、５１１，５１２・・・スリット。FIG. 1 shows the first embodiment of the present invention. FIG. 2 is a conceptual diagram embodying the embodiment of FIG. 1, and FIG. 3 is an example of the spectral characteristics of a single-axis mode semiconductor laser. Figure 4 is an example of the temperature dependence of the injection current vs. optical output characteristic of a single-axis mode semiconductor laser, and Figures 5, 6, and 7 are examples of single-axis measurements taken using the system shown in Figures 1-1. Example of the characteristics of a mode semiconductor laser. Figure 8 shows the block diadam of a conventional semiconductor laser injection current vs. optical output characteristic measurement device. Figure 9 shows the characteristics of a single-axis mode semiconductor laser measured using the device shown in Figure 8. This is an example. DESCRIPTION OF SYMBOLS 1... Element to be measured, 2... Power source, 3... Temperature controller, 4... Optical system, 5... Optical band pass filter, 6... Optical current converter, 7 ...Control unit, 8.
...Display section, 31...Electronic cooler, 32...Thermistor, 41...Fiber, 52...Diffraction grating, 61
... Boto diode, 100 ... Laser bar, 11
2...Probe, 511,512...Slit.
Claims (1)
ド・バス・フィルタ機能を有する入力光観測部と、被測
定半導体レーザの温度制御機構とを具備したことを特徴
とする単一軸モード半導体レーザの特性測定装置。A single-axis mode semiconductor laser comprising an input light observation section having a band pass filter function in which the band center wavelength and transmission bandwidth can be independently controlled, and a temperature control mechanism for the semiconductor laser to be measured. Characteristic measuring device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16145689A JPH0325989A (en) | 1989-06-23 | 1989-06-23 | Single axis mode semiconductor laser characteristic measuring apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16145689A JPH0325989A (en) | 1989-06-23 | 1989-06-23 | Single axis mode semiconductor laser characteristic measuring apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0325989A true JPH0325989A (en) | 1991-02-04 |
Family
ID=15735452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16145689A Pending JPH0325989A (en) | 1989-06-23 | 1989-06-23 | Single axis mode semiconductor laser characteristic measuring apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0325989A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020031369A (en) * | 2002-04-04 | 2002-05-01 | 전경호 | Elasticity buckle |
| CN112147490A (en) * | 2020-11-26 | 2020-12-29 | 上海菲莱测试技术有限公司 | Method and system for laser chip integration test |
-
1989
- 1989-06-23 JP JP16145689A patent/JPH0325989A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020031369A (en) * | 2002-04-04 | 2002-05-01 | 전경호 | Elasticity buckle |
| CN112147490A (en) * | 2020-11-26 | 2020-12-29 | 上海菲莱测试技术有限公司 | Method and system for laser chip integration test |
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