JPH03253032A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH03253032A JPH03253032A JP5153290A JP5153290A JPH03253032A JP H03253032 A JPH03253032 A JP H03253032A JP 5153290 A JP5153290 A JP 5153290A JP 5153290 A JP5153290 A JP 5153290A JP H03253032 A JPH03253032 A JP H03253032A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- furnace
- gas
- film
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 21
- 150000002500 ions Chemical class 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 11
- 239000007789 gas Substances 0.000 abstract description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 10
- 230000007935 neutral effect Effects 0.000 abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- -1 fluorine ions Chemical class 0.000 description 8
- 238000005530 etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ウェハープロセスにおける半導体基板面の処理方法に関
し、
自然酸化膜のない清浄なウエノ＼−面を処理することを
目的とし、
半導体基板面に熱処理で離脱する還元性のイオンを吸着
させて自然酸化から表面を保護し、前記半導体基板を熱
処理して前記イオンを離脱させると同時に露出した半導
体基板面を処理するようにしたことを特徴とする。[Detailed Description of the Invention] [Summary] Regarding a method for treating the surface of a semiconductor substrate in a wafer process, the purpose is to treat a clean wafer surface without a natural oxide film, and a method for treating the surface of a semiconductor substrate with reduction that is released by heat treatment on the surface of the semiconductor substrate. The present invention is characterized in that the surface of the semiconductor substrate is protected from natural oxidation by adsorbing chemical ions, the semiconductor substrate is heat-treated to remove the ions, and the exposed semiconductor substrate surface is treated at the same time.
本発明は半導体装置の製造方法にかかり、特にウェハー
プロセスにおける半導体基板（ウェハー）面の処理方法
に関する。The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of processing a semiconductor substrate (wafer) surface in a wafer process.
最近、ＩＣ，ＬＳＩなどの半導体装置を製造するウェハ
ープロセスにおいては、数十枚のウェハーを集めて１０
ツトを構威し、ロット単位毎に各工程の処理を進める方
法が採られている。その際、ウェハープロセスの処理工
程が数多くあるために、−時期滞留して時日が開くこと
があり、また、休業日には保管しておく必要がある。従
って、例えば、窒素（Ｎ２）などの中性ガスを充満させ
た容器にウェハーを密封して保管するなど、ウェハーの
保管には十分の注意が払われている。Recently, in the wafer process for manufacturing semiconductor devices such as ICs and LSIs, dozens of wafers are collected and 10
A method is adopted in which each process is processed on a lot-by-lot basis. At that time, since there are many processing steps in the wafer process, the time and date may be delayed due to the large number of processing steps, and it is necessary to store the data on holidays. Therefore, sufficient care is taken in storing wafers, such as storing wafers in a sealed container filled with a neutral gas such as nitrogen (N2).
しかし、ウェハーを空気に触れないようにすることは不
可能で、ウェハーの表面、例えば、シリコンウェハーの
表面には空気と触れて生しる自然酸化膜（ｎａｔｕｒａ
ｌ ｏｘｉｄｅ）が発生する。この自然酸化膜とは膜厚
２０入程度の極めて薄い酸化シリコン（ＳｉＯ２）膜で
ある。However, it is impossible to prevent wafers from coming into contact with air, and the surface of a wafer, such as a silicon wafer, has a natural oxide film that forms when it comes into contact with air.
l oxide) is generated. This natural oxide film is an extremely thin silicon oxide (SiO2) film with a thickness of about 20 μm.
従って、ウェハープロセスの各処理工程、例えば、電極
として多結晶シリコン膜を成長させる化学気相成長（Ｃ
ＶＤ）工程では、電極のコンタクトを良好にするために
、予め弗酸（ＨＦ）溶液でエツチングして、次に水洗、
乾燥する前処理をおこなった後、素早く加熱成長炉に送
入して多結晶シリコン膜を成長する処理をおこなってい
る。Therefore, each processing step of the wafer process, for example, chemical vapor deposition (CCV), in which a polycrystalline silicon film is grown as an electrode.
In the VD) process, in order to make good contact with the electrodes, the electrodes are first etched with a hydrofluoric acid (HF) solution, then washed with water,
After pretreatment for drying, the material is quickly sent to a heating growth furnace to grow a polycrystalline silicon film.
［発明が解決しようとする課題］
しかし、そのような加熱成長炉の内部を中性雰囲気に保
持していても、その炉に送入する際には空気を巻き込み
、折角上記のような前処理によって自然酸化膜を除去し
ておいても、加熱成長炉の入り口でシリコンウェハー面
に再び自然酸化程度の酸化膜が生成されて、上記の前処
理が無意味になり、その上に多結晶シリコン膜などの被
膜を成長させるという結果になる。[Problems to be Solved by the Invention] However, even if the inside of such a heating growth furnace is maintained in a neutral atmosphere, air will be drawn in when feeding the furnace, and the pretreatment as described above will be necessary. Even if the natural oxide film is removed by the process, an oxide film of the same level as natural oxidation will be generated again on the silicon wafer surface at the entrance of the heating growth furnace, rendering the above pretreatment meaningless, and polycrystalline silicon will be grown on top of it. This results in the growth of a coating such as a film.
また、温度が未だ不安定である等の理由のために、前処
理後に放置する時間が長びくと再び自然酸化膜か生しる
。Furthermore, if the pretreatment is left for a long time because the temperature is still unstable, a natural oxide film will grow again.
第２図は従来の問題点を示す断面図で、シリコンウェハ
ー１の表面に自然酸化膜２（膜厚２ＯＡ）が生して、そ
の上に多結晶シリコン膜３（膜厚１μｍ）を成長じてお
り、このような状態に形成されるとコンタクト抵抗が生
しるなど、素子特性が害されることになる。FIG. 2 is a cross-sectional view showing a problem with the conventional method. A natural oxide film 2 (thickness: 2 OA) is grown on the surface of a silicon wafer 1, and a polycrystalline silicon film 3 (thickness: 1 μm) is grown on top of it. If formed in such a state, contact resistance will occur and the device characteristics will be impaired.
本発明はこのような問題点を除去して、自然酸化膜のな
い清浄なウェハー面に処理することを目的とした製造方
法を提案するものである。The present invention proposes a manufacturing method aimed at eliminating such problems and processing a clean wafer surface without a natural oxide film.
（課題を解決するための手段〕
その課題は、半導体基板面に熱処理で離脱する還元性の
イオン（例えば、弗素イオン）を吸着させて自然酸化か
ら表面を保護し、前記半導体基板を熱処理して前記イオ
ンを離脱させると同時に露出した半導体基板面を処理す
るようにした製造方法によって解決される。(Means for solving the problem) The problem is to protect the surface from natural oxidation by adsorbing reducing ions (e.g., fluorine ions) released by heat treatment onto the surface of the semiconductor substrate, and to heat-treat the semiconductor substrate. This problem is solved by a manufacturing method in which the exposed semiconductor substrate surface is treated at the same time as the ions are released.
［作 用］
即ち、本発明は清浄なウェハー（半導体基板）面に熱処
理で離脱する還元性のイオンを吸着させておき、高温度
において熱処理と同時にそのイオンを除去して処理（膜
成長などの処理）する。そうすると、空気に触れること
なく、イオンの除去と同時に露出したウェハーが処理さ
れて、例えば、良好な電極のコンタクトが得られる等、
ウェハーの歩留、信頼性の向上を図ることができる。[Function] That is, the present invention adsorbs reducing ions that are released during heat treatment on a clean wafer (semiconductor substrate) surface, and removes the ions at high temperature at the same time as the heat treatment. processing). This allows the exposed wafer to be processed at the same time as the ions are removed without being exposed to air, e.g. to obtain good electrode contact.
It is possible to improve the yield and reliability of wafers.
以下に図面を参照して実施例によって詳細に説明する。 Examples will be described in detail below with reference to the drawings.
第１図（ａ）〜（Ｃ）は本発明によって処理したウェハ
ーの工程断面図を示しており、本例は熱処理で離脱する
還元性のイオンとして弗素イオン（Ｆ゛）を用いた例で
ある。Figures 1 (a) to (C) show process cross-sectional views of wafers processed according to the present invention, and this example is an example in which fluorine ions (F') are used as reducing ions that are released during heat treatment. .
まず、シリコンウェハーを無水弗酸ガスを充満させた容
器中に暫く入れておく。そうすると、シリコンウェハー
表面に形成されている自然酸化膜も弗酸ガスで除去され
て、露出したウェハー表面に弗素イオン（Ｆ゛）を吸着
する。第１図（ａ）はそれを図示した断面図で、１はシ
リコンウェハーである。且つ、このような吸着イオンは
常温では容易に離脱しない。First, a silicon wafer is placed in a container filled with anhydrous hydrofluoric acid gas for a while. Then, the natural oxide film formed on the silicon wafer surface is also removed by the hydrofluoric acid gas, and fluorine ions (F) are adsorbed onto the exposed wafer surface. FIG. 1(a) is a cross-sectional view illustrating it, and 1 is a silicon wafer. Moreover, such adsorbed ions do not easily leave at room temperature.
次いで、そのようなシリコンウェハーをウェハープロセ
スの一処理工程、例えば、多結晶シリコン膜を成長させ
るＣＶＤ工程て処理する場合は、弗素イオンを吸着した
ままのウェハー状態で加熱成長炉に送入する。その加熱
成長炉内は窒素などの中性ガス雰囲気にあり、その雰囲
気内で多結晶シリコン膜を成長する温度（約６００″Ｃ
程度）にウェハーが昇温される。その時、約５００°Ｃ
前後でウェハー表面から弗素イオンが離脱する。第１図
（ｂ）はその弗素イオン（Ｆ゛）の離脱状態を図示した
断面図である。Next, when such a silicon wafer is subjected to one processing step of a wafer process, for example, a CVD step for growing a polycrystalline silicon film, the wafer is sent to a heating growth furnace with fluorine ions adsorbed thereon. The inside of the heating growth furnace is in a neutral gas atmosphere such as nitrogen, and the temperature for growing polycrystalline silicon films in this atmosphere (approximately 60''C)
The temperature of the wafer is raised to a certain degree. At that time, about 500°C
Fluorine ions are separated from the wafer surface before and after. FIG. 1(b) is a cross-sectional view illustrating the state in which the fluorine ions (F) are separated.
次いで、加熱成長炉を上記の成長温度まで昇温し、ある
いは、加熱成長炉の成長ヅーンまでウェハーを更に送入
して、中性ガスに代わってモノシラン（ＳｉＨ２）など
の反応ガスを加熱成長炉に導入して多結晶シリコン膜を
シリコンウェハー面に成長する。第１図（Ｃ）はそれを
示した断面図で、３は多結晶シリコン膜である。Next, the temperature of the heated growth furnace is raised to the above-mentioned growth temperature, or the wafer is further fed to the growth zone of the heated growth furnace, and a reactive gas such as monosilane (SiH2) is added to the heated growth furnace instead of the neutral gas. A polycrystalline silicon film is grown on the silicon wafer surface. FIG. 1(C) is a cross-sectional view showing this, and 3 is a polycrystalline silicon film.
上記のようにして、従来の前処理の代わりに、シリコン
ウェハーの表面に弗素イオンを吸着させておいて、熱処
理によってイオンを離脱させると同時に露出したウェハ
ー面に処理をおこなえば、自然酸化膜を介在させること
なく膜成長などの処理をおこなうことができる。従って
、−層ウェハーの歩留および品質を向上させることが可
能になる。As described above, instead of the conventional pre-treatment, if fluorine ions are adsorbed onto the surface of the silicon wafer and the ions are removed by heat treatment, at the same time the exposed wafer surface is treated, a natural oxide film can be formed. Processes such as film growth can be performed without any intervention. Therefore, it becomes possible to improve the yield and quality of -layer wafers.
且つ、上記実施例は熱処理で離脱する還元性のイオンと
して弗素イオン（Ｆ゛）を用いた例であるが、他のイオ
ン、例えば塩素（ｃ１゛） 、臭素（Ｂｒ” ）などハ
ロゲン元素イオンなどを用いることもできる。その際に
、従来の前処理（弗酸溶液エツチング処理）によって自
然酸化膜を除去した後、イオンを吸着させる処理をおこ
ｔ；っても良い。In addition, although the above example uses fluorine ions (F') as reducing ions that are released during heat treatment, other ions, such as halogen element ions such as chlorine (c1') and bromine (Br''), etc. In this case, after the native oxide film is removed by a conventional pretreatment (hydrofluoric acid solution etching treatment), a treatment for adsorbing ions may be performed.
要する乙こ、本発明にかかる要旨はウェハー表面乙こイ
オンを吸着させておき、イオン離脱と同時にウェハー処
理することに特徴かあり、膜成長のみならずエツチング
処理においてもエツチングの均質化を図ることができる
。The gist of the present invention is that ions are adsorbed on the wafer surface and the wafer is processed at the same time as the ions are released, thereby achieving uniformity of etching not only in film growth but also in etching processing. I can do it.
以上の説明から明らかなように、本発明によれば半導体
基板（ウェハー）表面に存在する自然酸化膜を除去して
、基板の露出面に膜成長などのウェハー処理をおこなう
ことができ、ウェハーの歩留５品質が改善されて、半導
体デバイスのコストダウン、高品質化に顕著な効果があ
るものである。As is clear from the above description, according to the present invention, it is possible to remove the natural oxide film existing on the surface of a semiconductor substrate (wafer) and perform wafer processing such as film growth on the exposed surface of the substrate. Yield 5 quality is improved, which has a remarkable effect on cost reduction and high quality of semiconductor devices.
第１図（ａ）〜（Ｃ）は本発明によって処理したウェハ
ーの工程断面図、
第２図は従来の問題点を示す断面図である。
図において、
１はシリコンウェハー
２は自然酸化膜、
３は多結晶シリコン膜、
Ｆ゛は弗素イオン
を示している。FIGS. 1(a) to (C) are process cross-sectional views of wafers processed according to the present invention, and FIG. 2 is a cross-sectional view showing the problems of the conventional method. In the figure, 1 indicates a silicon wafer 2, a natural oxide film, 3 a polycrystalline silicon film, and F' a fluorine ion.
Claims (1)
着させて自然酸化から表面を保護し、前記半導体基板を
熱処理して前記イオンを離脱させると同時に露出した半
導体基板面を処理するようにしたことを特徴とする半導
体装置の製造方法。The surface of the semiconductor substrate is protected from natural oxidation by adsorbing reducing ions that are released by heat treatment, and the exposed semiconductor substrate surface is treated at the same time as the semiconductor substrate is heat treated to release the ions. A method for manufacturing a semiconductor device, characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5153290A JPH03253032A (en) | 1990-03-01 | 1990-03-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5153290A JPH03253032A (en) | 1990-03-01 | 1990-03-01 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03253032A true JPH03253032A (en) | 1991-11-12 |
Family
ID=12889635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5153290A Pending JPH03253032A (en) | 1990-03-01 | 1990-03-01 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03253032A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140247A (en) * | 1995-03-10 | 2000-10-31 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
-
1990
- 1990-03-01 JP JP5153290A patent/JPH03253032A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6140247A (en) * | 1995-03-10 | 2000-10-31 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
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