JPH03246990A - Formation of thick film conductor - Google Patents
Formation of thick film conductorInfo
- Publication number
- JPH03246990A JPH03246990A JP4237290A JP4237290A JPH03246990A JP H03246990 A JPH03246990 A JP H03246990A JP 4237290 A JP4237290 A JP 4237290A JP 4237290 A JP4237290 A JP 4237290A JP H03246990 A JPH03246990 A JP H03246990A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- substrate
- conductor paste
- paste
- printed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 56
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 229910000679 solder Inorganic materials 0.000 claims abstract description 23
- 239000011521 glass Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000654 additive Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000000919 ceramic Substances 0.000 abstract description 7
- 239000000843 powder Substances 0.000 abstract description 7
- 238000009736 wetting Methods 0.000 abstract description 4
- 230000004907 flux Effects 0.000 abstract description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 230000032683 aging Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000002241 glass-ceramic Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- -1 However Chemical class 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、セラミックス基板、特に低温焼成基板に高い
接着強度を持ち且つはんだ性も良好な導体を形成する方
法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a conductor having high adhesive strength and good solderability on a ceramic substrate, particularly a low temperature fired substrate.
［従来の技術］
回路の高速化、高密度化の要求に応えるためハイブリッ
ドＩＣなどに代表されるセラミックス厚膜回路基板にお
いて多層化が進んでいる。[Prior Art] In order to meet the demands for higher speed and higher density circuits, ceramic thick film circuit boards, typified by hybrid ICs, are becoming increasingly multilayered.
従来から行われているアルミナ基板による多層化は、ア
ルミナを主材としたグリーンシート上に所定の導体回路
を印刷形成し、複数層重ねて１５００〜１６００℃の高
温で焼成するものであり、導体材料としてはＭｏ、 Ｗ
などの高融点金属が使用されている。しかしながらこれ
らの金属は比較的高抵抗であり、しかもアルミナの誘電
率が大きいため、高速化の要望には十分応えられていな
かった。Conventionally, multi-layering using alumina substrates involves printing a predetermined conductor circuit on a green sheet mainly made of alumina, stacking multiple layers and firing at a high temperature of 1500 to 1600°C. The materials are Mo, W
High melting point metals such as However, these metals have relatively high resistance, and alumina has a high dielectric constant, so they have not been able to fully meet the demand for higher speeds.
この高速化の問題を解決するために、近年ガラス−セラ
ミックスを主材とした９００°Ｃ以下の低温で焼成が可
能な低温焼成多層基板が多数開発されている。In order to solve this problem of increasing speed, many low-temperature firing multilayer substrates that are mainly made of glass-ceramics and can be fired at a low temperature of 900° C. or lower have been developed in recent years.
このような低温焼成基板にはＡｕ、 Ａｇ、 Ａｇ／Ｐ
ｄ、Ｃｕ等の低抵抗導体が使用でき、しかも基板自体が
低誘電率を有するため信号伝播の飛躍的な高速化が図れ
る。Such low-temperature fired substrates include Au, Ag, and Ag/P.
Since low resistance conductors such as d, Cu, etc. can be used, and the substrate itself has a low dielectric constant, signal propagation speed can be dramatically increased.
このような低温焼成基板を用いて多層セラミックス回路
基板を作る場合にはまずガラス−セラミックスを主材と
したグリーンシート上にＡｕ、 Ａｇ。When making a multilayer ceramic circuit board using such a low-temperature fired substrate, first Au and Ag are deposited on a green sheet mainly made of glass-ceramics.
Ａｇ／ Ｐｄ、 Ｃｕ等の金属粉末を含有するペースト
を印刷し、積層、焼成する。この多層基板の表面に必要
な導体、抵抗体を形成し、ガラスでオーバーコートし、
各種部品を実装すればハイブリッドＩＣとすることがで
きる。しかしながら、一般に市販されているＡｕ、 Ａ
ｇ、 Ａｇ／Ｐｄ、 Ａｇ／Ｐｔ、 Ｃｕ等のアルミナ
基板用導体ペーストは、表面用の導体として適用すると
はんだ濡れが著しく悪く、リード端子の取り付けができ
ず、また基板との接着強度も小さいためそのまま使用す
ることができなかった。A paste containing metal powders such as Ag/Pd and Cu is printed, laminated, and fired. Form the necessary conductors and resistors on the surface of this multilayer board, overcoat it with glass,
By mounting various parts, it can be made into a hybrid IC. However, generally commercially available Au, A
When alumina substrate conductor pastes such as G, Ag/Pd, Ag/Pt, and Cu are used as surface conductors, they have extremely poor solder wettability, making it impossible to attach lead terminals, and their adhesive strength with the substrate is low. It could not be used as is.
低温焼成基板はアルミナ基板と異なり導体中のガラス成
分と強固な接合構造を作りにくい。この接合を強固にし
ようとすると表面用の導体ペーストにガラスフリットや
添加物を多量に含有せしめることになるが、そうすると
はんだ濡れが著しく劣化する。このように接合強度とは
んだ濡れを両立させる導体はいまだ得られておらず、低
温焼成基板の実用化が困難な一因となっていた。Unlike alumina substrates, low-temperature fired substrates are difficult to form a strong bonding structure with the glass component in the conductor. In order to strengthen this bond, the surface conductor paste must contain a large amount of glass frit or additives, but this significantly deteriorates solder wetting. Thus, a conductor that achieves both bonding strength and solder wettability has not yet been obtained, which has been one of the reasons why it is difficult to put low-temperature fired substrates into practical use.
本発明の目的は接合強度が高く、はんだ濡れも良好な表
面導体を形成する方法を提供することにある。An object of the present invention is to provide a method for forming a surface conductor with high bonding strength and good solder wettability.
上記目的を達成するために本発明の方法は、基板表面に
基板と反応性の高い添加物を含みガラスフリット含有率
の高い第１の導体ペーストを印刷し、乾燥し、所望によ
り焼成し、前記乾燥膜又は焼成膜上に高はんだ濡れ性を
有する第２の導体ペーストを重ねて印刷、乾燥、焼成す
る事により表面導体を形成する点に特徴がある。In order to achieve the above object, the method of the present invention includes printing a first conductor paste containing additives highly reactive with the substrate and having a high glass frit content on the surface of the substrate, drying, and baking if desired, The method is characterized in that a surface conductor is formed by printing, drying, and baking a second conductive paste having high solder wettability on the dry film or baked film.
第１の、又は第２の導体ペーストはＡｕ、 Ａｇ、 Ａ
ｇ／Ｐｄ、 Ａｇ／Ｐｔいずれの金属を用いたものでも
かまわないが、第１の導体ペーストとしてはＡｇ／Ｐｄ
を用いたものが望ましく、また第２の導体ペーストには
ＡｇまたはＡｇ／Ｐｔを用いたものがよい。The first or second conductive paste is Au, Ag, A
The first conductor paste may be made of either Ag/Pd or Ag/Pt, but Ag/Pd may be used as the first conductor paste.
It is preferable to use Ag or Ag/Pt for the second conductive paste.
第１の導体ペーストに含有されるガラスフリットはＰｂ
Ｏ−５ｉＯｚ −Ｂ２０ｉ等の一般的なものでよく、Ｚ
ｎＯ−ＰｂＯ−５ｉＯ□等の結晶化ガラスでも良い。含
有量は金属粉末重量を１００重量部としたとき１．５〜
７重量部程度が望ましい。１．５重量部未満では基板と
の十分な強度が得られず、７重量部を越えると導体金属
の焼結を阻害するため抵抗値が著しく増大する。また、
過剰なガラスは導体からにじみ出したり、第２の導体の
はんだ濡れ性を悪化させる場合もある。The glass frit contained in the first conductor paste is Pb
General ones such as O-5iOz-B20i may be used, and Z
Crystallized glass such as nO-PbO-5iO□ may also be used. The content is 1.5 to 100 parts by weight of the metal powder.
About 7 parts by weight is desirable. If it is less than 1.5 parts by weight, sufficient strength with the substrate cannot be obtained, and if it exceeds 7 parts by weight, sintering of the conductive metal is inhibited and the resistance value increases significantly. Also,
Excess glass may ooze out of the conductor or impair the solder wettability of the second conductor.
接着強度を向上させるために各種の添加剤を使うことが
できる。特にＺｎとＣｕが効果的で、基板と反応してス
ピネル化合物を形成し強固な接合層となる。含有量はＺ
ｎとＣｕの一方もしくは両方が合計で６重量部を越えな
い範囲が望ましい。含有形態は金属のままでも酸化物で
もよく、有機金属化合物でもかまわない。そのほか、基
板とガラスの濡れをよくし、焼成中のガラスの軟化点を
下げ、ガラス基板側へ移動し易くさせる添加剤として一
般的な旧２０．を１０重量部を越えない範囲で含有せし
めることができる。Various additives can be used to improve adhesive strength. Zn and Cu are particularly effective, reacting with the substrate to form a spinel compound and forming a strong bonding layer. The content is Z
It is desirable that the total amount of one or both of n and Cu does not exceed 6 parts by weight. The content may be in the form of a metal, an oxide, or an organometallic compound. In addition, the common old 20. may be contained in an amount not exceeding 10 parts by weight.
第２の導体ペーストでは第１の導体膜との接合のために
０．３〜２重量部のガラスを含有するのが好ましい。第
１の導体膜の表面にガラスが浮き出していることがあり
、この場合第２の導体の含有量が０．３重量部未満では
第１の導体膜と第２０導体膜の界面で剥離してしまうか
らである。しかし、２重量部以上のガラスの含有は表面
のはんだ濡れ性を損なうので好ましくない。また、第２
の導体ペーストにははんだ濡れ性を向上させるために１
〜４重量部のＢｉｚ０３を添加するのが望ましい。導体
表面に浮きでた極微量のＢｉｚＯ３ははんだと導体の濡
れを良（するフラックスの働きをする。１重量部未満で
あれば導体中に内包され、また第１の導体膜に吸収され
てしまい第２の導体膜のはんだ濡れには寄与しない。４
重量部を超えると、第２の導体膜のｎ１２ｏｆｆが過剰
となりはんだ濡れ性が悪化する。The second conductor paste preferably contains 0.3 to 2 parts by weight of glass for bonding with the first conductor film. Glass may protrude on the surface of the first conductor film, and in this case, if the content of the second conductor is less than 0.3 parts by weight, it may peel off at the interface between the first conductor film and the 20th conductor film. This is because it will be put away. However, the inclusion of glass in an amount of 2 parts by weight or more is not preferable because it impairs the solder wettability of the surface. Also, the second
The conductor paste contains 1 to improve solder wettability.
It is desirable to add ~4 parts by weight of Biz03. A very small amount of BizO3 floating on the surface of the conductor acts as a flux to improve wetting of the solder and conductor.If it is less than 1 part by weight, it will be encapsulated in the conductor and absorbed by the first conductor film. Does not contribute to solder wetting of the second conductor film.4
If it exceeds the weight part, n12off of the second conductive film becomes excessive and the solder wettability deteriorates.
また、第１の導体ペースト、第２の導体ペーストとも、
ペースト化に際しては有機ビヒクルを１２〜５０重量部
含有せしめると良い。In addition, both the first conductive paste and the second conductive paste
When making a paste, it is preferable to include 12 to 50 parts by weight of an organic vehicle.
電極の形成方法は通常の厚膜工程と同様にスクリーン印
刷、焼成でよく、焼成は第１の導体、第２の導体の個別
焼成でも同時焼成でも良い。The method for forming the electrode may be screen printing or baking similar to a normal thick film process, and the baking may be performed by baking the first conductor and the second conductor individually or simultaneously.
（イ）使用基板
５ｉ０２６０重量部、Ｐｂ０２５重量部、８２０３１０
重量部、ＣａＯ１０重量部から成るガラス粉末とアルミ
ナの粉末を一対一の割合で混合して調製した低温焼成基
板を用いた。(a) Substrate used 5i0260 parts by weight, Pb025 parts by weight, 820310
A low-temperature fired substrate prepared by mixing glass powder and alumina powder consisting of 10 parts by weight and 10 parts by weight of CaO was used.
（ロ）導体ペーストの調製
第１表に示した組成比の導電金属粉、ガラス粉、添加剤
を１２重量部のエチルセルロースを８８重量部のターピ
ネオールに溶解させて調整した有機ビヒクルと混合し、
３本ロールにより十分混練して導体ペーストを得た。(b) Preparation of conductive paste A conductive metal powder, glass powder, and additives having the composition ratio shown in Table 1 are mixed with an organic vehicle prepared by dissolving 12 parts by weight of ethyl cellulose in 88 parts by weight of terpineol.
The mixture was sufficiently kneaded using three rolls to obtain a conductive paste.
第
表
Ｇ１：４５％ＺｎＯ−３５％ＰｂＯ−１５％５ｉＯｚ−
５％Ｂ２０゜Ｇ２：５５％ＰｂＯ−３５％５ｉＯｚ−１
０％Ｂ２０３（ハ）評価方法
第１表に示された導体ペーストの２種を用いて、焼成済
みの低温焼成セラミックス基板上に同時もしくは個別焼
成にて導体を形成し、以下に示した方法にて各種の評価
を行った。また比較のため第１表の導体ペーストと市販
の導体ペーストを１種だけ用いて１度の印刷焼成でその
結果を第２表に示した。Table G1: 45%ZnO-35%PbO-15%5iOz-
5%B20°G2: 55%PbO-35%5iOz-1
0% B203 (c) Evaluation method Using the two types of conductor pastes shown in Table 1, conductors were formed on a fired low-temperature fired ceramic substrate by simultaneous or separate firing, and the method shown below was applied. We conducted various evaluations. For comparison, Table 2 shows the results obtained by printing and baking once using only one type of conductor paste shown in Table 1 and a commercially available conductor paste.
■ 熱エージング後の接着強度
基板上に２ｍ×２閣の大きさで形成された膜厚約１０μ
ｍの導体部を約２３０℃の２Ａｇ／６２Ｓｎ／３６Ｐｂ
はんだ中に５秒間浸漬してはんだを付与する。■ Adhesive strength after heat aging Approximately 10μ thick film formed on a 2m x 2cm substrate
2Ag/62Sn/36Pb at about 230℃
Apply solder by dipping into solder for 5 seconds.
続いて同組成のはんだを用いてＳｎメツキ銅線を導体部
にはんだ付けし、１５０°Ｃの恒温槽中に放置する。１
０００時間経過後取り出して銅線を８０閣／秒の速度で
引っ張り、基板から銅線が剥離した時の強度を接着強度
とした。Subsequently, a Sn-plated copper wire is soldered to the conductor using a solder having the same composition, and the wire is left in a constant temperature bath at 150°C. 1
After 1,000 hours had elapsed, the copper wire was taken out and pulled at a speed of 80 min/sec, and the strength when the copper wire was peeled off from the substrate was defined as the adhesive strength.
■ 冷熱サイクル後の接着強度
上記と同様の方法で銅線を付与した試料片を４０℃と１
５０ ’Ｃの恒温槽にそれぞれ３０分づつ交互にさらし
、これを１サイクルとして１０００サイクル経過後上記
と同様の方法で接着強度を測定した。■ Adhesive strength after heating and cooling cycles A sample piece to which copper wire was applied in the same manner as above was heated to 40℃ and
Each sample was exposed alternately to a constant temperature bath at 50'C for 30 minutes each, and after 1000 cycles, the adhesive strength was measured in the same manner as above.
■はんだ広がり率
１０＋＋ａａＸ１０ｎｎｎの大きさで膜厚約１０μｍの
導体膜を形成した基板をホットプレート上で約２３０°
Ｃに加熱する。温度が一定となったら導体膜上に直径１
ｍｍの２Ａｇ／ ６２Ｓｎ／ ３６Ｐｂはんだポールを
のせ、ポール溶融時から１０秒保持する。放冷した後、
溶融して広がったはんだポールの直径を測定し以下の計
算により広がり率を求めた。■A substrate on which a conductive film with a solder spread rate of 10++ aaX10nnn and a thickness of about 10 μm has been formed is held at about 230 degrees on a hot plate.
Heat to C. When the temperature becomes constant, a diameter of 1 is placed on the conductor film.
A 2Ag/62Sn/36Pb solder pole of 2mm is placed on it and held for 10 seconds after the pole melts. After cooling,
The diameter of the solder pole that had melted and spread was measured, and the spreading rate was determined by the following calculation.
はんだ広がり率＝（溶融後のはんだポールの直径１）ｘ
ｌｏｏ （％）
第２表から、本発明の形成方法により形成した導体膜は
、１種のみの導体を用いた場合に比べて熱エージング後
の接着強度及びはんだ濡れ性の両方で良好な結果を示し
、それらの向上に非常に効果的であることがわかった。Solder spreading rate = (diameter of solder pole after melting 1) x
loo (%) From Table 2, the conductor film formed by the formation method of the present invention has better results in both adhesive strength and solder wettability after heat aging than when only one type of conductor is used. and was found to be very effective in improving them.
〔発明の効果］
本発明によればセラミックス基板特に低温焼成基板高は
んだ濡れ性、高接着強度を有する導体を形成することが
できる。[Effects of the Invention] According to the present invention, a conductor having high solder wettability and high adhesive strength can be formed on a ceramic substrate, particularly on a low-temperature fired substrate.
Claims (1)
含有率の高い第１の導体ペーストを基板上に印刷、乾燥
し、所望によりさらに焼成し、前記乾燥膜又は焼成膜上
に高はんだ濡れ性を有する第２の導体ペーストを重ねて
印刷、乾燥、焼成することを特徴とする厚膜導体の形成
方法。A first conductor paste containing additives that are highly reactive with the substrate and having a high glass frit content is printed on the substrate, dried, and optionally further baked to impart high solder wettability to the dried film or baked film. 1. A method for forming a thick film conductor, comprising printing, drying, and baking a second conductor paste.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4237290A JPH03246990A (en) | 1990-02-26 | 1990-02-26 | Formation of thick film conductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4237290A JPH03246990A (en) | 1990-02-26 | 1990-02-26 | Formation of thick film conductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03246990A true JPH03246990A (en) | 1991-11-05 |
Family
ID=12634215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4237290A Pending JPH03246990A (en) | 1990-02-26 | 1990-02-26 | Formation of thick film conductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03246990A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009170910A (en) * | 2008-01-11 | 2009-07-30 | Lg Chem Ltd | Conductive pattern and method of forming thereof |
| US7718273B2 (en) | 2003-01-14 | 2010-05-18 | Sharp Kabushiki Kaisha | Wiring material, wiring substrate and manufacturing method thereof, display panel, fine particle thin film material, substrate including thin film layer and manufacturing method thereof |
| JP2010199346A (en) * | 2009-02-26 | 2010-09-09 | Kyocera Corp | Wiring board, and manufacturing method thereof |
| JP2014107326A (en) * | 2012-11-26 | 2014-06-09 | Mitsubishi Materials Corp | Circuit board and semiconductor device |
-
1990
- 1990-02-26 JP JP4237290A patent/JPH03246990A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7718273B2 (en) | 2003-01-14 | 2010-05-18 | Sharp Kabushiki Kaisha | Wiring material, wiring substrate and manufacturing method thereof, display panel, fine particle thin film material, substrate including thin film layer and manufacturing method thereof |
| US8088495B2 (en) | 2003-01-14 | 2012-01-03 | Sharp Kabushiki Kaisha | Wiring material, wiring substrate and manufacturing method thereof, display panel, fine particle thin film material, substrate including thin film layer and manufacturing method thereof |
| JP2009170910A (en) * | 2008-01-11 | 2009-07-30 | Lg Chem Ltd | Conductive pattern and method of forming thereof |
| JP2010199346A (en) * | 2009-02-26 | 2010-09-09 | Kyocera Corp | Wiring board, and manufacturing method thereof |
| JP2014107326A (en) * | 2012-11-26 | 2014-06-09 | Mitsubishi Materials Corp | Circuit board and semiconductor device |
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