JPH03246932A - Manufacture equipment for semiconductor - Google Patents
Manufacture equipment for semiconductorInfo
- Publication number
- JPH03246932A JPH03246932A JP4473390A JP4473390A JPH03246932A JP H03246932 A JPH03246932 A JP H03246932A JP 4473390 A JP4473390 A JP 4473390A JP 4473390 A JP4473390 A JP 4473390A JP H03246932 A JPH03246932 A JP H03246932A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- process tube
- wall surface
- silicon
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims abstract description 71
- 230000008569 process Effects 0.000 claims abstract description 69
- 238000010438 heat treatment Methods 0.000 claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 abstract description 25
- 150000003624 transition metals Chemical class 0.000 abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 19
- 238000011109 contamination Methods 0.000 abstract description 16
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000003111 delayed effect Effects 0.000 abstract description 2
- 230000000452 restraining effect Effects 0.000 abstract 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910000953 kanthal Inorganic materials 0.000 description 2
- 230000001698 pyrogenic effect Effects 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002053 acidogenic effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012966 insertion method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（概 要〕
半導体製造装置、特に半導体基板の高温熱処理に用いる
加熱炉のプロセスチューブの改良に関し、加熱炉による
高温加熱において変形がなく且つ遷移金属の拡散が防が
れるプロセスチューブを加熱炉内に具備した半導体製造
装置を提供し、高温加熱プロセス中の金属汚染による半
導体装置の性能劣化を防止すると共に、プロセスチュー
ブの寿命を延長せしめることを目的とし、加熱炉及び該
加熱炉に挿入されたシリコンからなるプロセスチューブ
を、有し、該プロセスチューブの外壁面、内壁面若しく
は内部の少なくとも何れかに、該プロセスチューブの管
壁に沿って管状に、該シリコン中よりも金属不純物の拡
散係数の小さい物質からなる金属不純物の拡散抑制層を
設けてなる構成を有する
〔産業上の利用分野〕
本発明は半導体製造装置、特に半導体基板の高温熱処理
に用いる加熱炉のプロセスチューブの改良に関する。[Detailed Description of the Invention] (Summary) Regarding the improvement of a process tube of a heating furnace used for semiconductor manufacturing equipment, especially high-temperature heat treatment of semiconductor substrates, the process tube is not deformed during high-temperature heating in a heating furnace and diffusion of transition metals is prevented. The purpose of the present invention is to provide a semiconductor manufacturing equipment equipped with a process tube in a heating furnace, to prevent performance deterioration of the semiconductor device due to metal contamination during the high-temperature heating process, and to extend the life of the process tube. It has a process tube made of silicone inserted into a heating furnace, and on at least one of the outer wall surface, inner wall surface, or inside of the process tube, it is formed in a tubular shape along the wall of the process tube than in the silicon. [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, particularly a process tube of a heating furnace used for high-temperature heat treatment of semiconductor substrates. Regarding improvements.
近年、半導体装置の高集積化により、それを構成する半
導体素子は極度に微細化されてきており、それに伴って
素子に蓄えられる電荷量は大幅に減少してきている。そ
のため、プロセス中に侵入してくる遷移金属によって半
導体基板内に形成される欠陥を介して生ずる微小リーク
により、前記素子内に蓄積された電荷が消失してデータ
が反転するという問題が生ずる。そのため、高温熱処理
中に遷移金属が半導体基板内へ侵入するのを防止するこ
とが、是非とも必要になってくる。In recent years, as semiconductor devices have become highly integrated, the semiconductor elements that constitute them have become extremely miniaturized, and the amount of charge stored in the elements has accordingly decreased significantly. Therefore, a problem arises in that micro-leakage caused by defects formed in the semiconductor substrate by transition metals entering during the process causes the charge accumulated in the device to disappear and data to be inverted. Therefore, it is absolutely necessary to prevent transition metals from entering the semiconductor substrate during high-temperature heat treatment.
従来、半導体装置を製造する際の加熱炉即ち電気炉のプ
ロセスチューブの材料には、一般に石英が用いられてい
た。しかし石英からなるプロセスチューブは、１１００
℃以上の高温熱処理により変形を生ずるので、ソフトラ
ンディング法等の基板挿入手段を用いる際には、変形し
たプロセスチューブに半導体基板が接触するようになる
ために、高温熱処理には使用することができない。Conventionally, quartz has generally been used as a material for process tubes in heating furnaces, that is, electric furnaces used to manufacture semiconductor devices. However, the process tube made of quartz is 1100
Since deformation occurs due to high-temperature heat treatment above ℃, when using a substrate insertion method such as the soft landing method, the semiconductor substrate comes into contact with the deformed process tube, so it cannot be used for high-temperature heat treatment. .
そのため、融点が高く高温熱処理での変形の少ない炭化
珪素（ＳｉＣ）によるロセスチューブも従来用いられた
が、ＳｉＣからなるプロセスチューブにはその製造工程
から来る遷移金属が含まれるために、これを用いるとプ
ロセスチューブから侵入する遷移金属により半導体素子
のリークが増加してしまう。For this reason, process tubes made of silicon carbide (SiC), which has a high melting point and is less deformed during high-temperature heat treatment, have traditionally been used, but process tubes made of SiC contain transition metals that come from the manufacturing process, so they are not used. The leakage of semiconductor devices increases due to transition metals entering from the process tube.
そこで更に、半導体基板と同程度の純度を有し遷移金属
を含有しない多結晶シリコンを用いて形成したプロセス
チューブも試みられたが、この場合、多結晶シリコン中
の遷移金属特に鉄（Ｆｅ）の拡散係数が石英に比べて５
桁程度大きいために、電気炉のヒータであるカンタル線
からの蒸発等によってプロセスチューブの外壁に付着し
た遷移金属のＦｅ等が高温熱処理中にプロセスチューブ
の内壁面へ多量に拡散され、このＦｅ等による半導体基
板の汚染によってやはり素子リークが増大する。In addition, attempts were made to form process tubes using polycrystalline silicon, which has the same purity as the semiconductor substrate and does not contain transition metals, but in this case, the transition metals in polycrystalline silicon, particularly iron (Fe), were Diffusion coefficient is 5 compared to quartz
Due to the large size, a large amount of transition metals such as Fe attached to the outer wall of the process tube due to evaporation from the Kanthal wire, which is the heater of the electric furnace, is diffused to the inner wall of the process tube during high-temperature heat treatment, and this Fe, etc. The contamination of the semiconductor substrate by this also increases element leakage.
上記のように、半導体基板の高温熱処理に用いる従来の
半導体製造装置においては、高温熱処理によるプロセス
チューブの変形、プロセスチューブ内に存在或いは拡散
してくる遷移金属による半導体基板の金属汚染等の問題
があった。As mentioned above, conventional semiconductor manufacturing equipment used for high-temperature heat treatment of semiconductor substrates has problems such as deformation of the process tube due to high-temperature heat treatment and metal contamination of the semiconductor substrate due to transition metals present or diffused in the process tube. there were.
そこで本発明は、加熱炉による高温加熱において変形が
なく、且つ遷移金属の拡散が防がれるプロセスチューブ
を加熱炉内に具備した半導体製造装置を提供し、高温プ
ロセス中における金属汚染による半導体装置の性能劣化
を防止すると共に、プロセスチューブの寿命を延長せし
めることを目的とする。SUMMARY OF THE INVENTION Therefore, the present invention provides a semiconductor manufacturing apparatus equipped with a process tube in a heating furnace that does not undergo deformation during high-temperature heating in a heating furnace and prevents diffusion of transition metals. The purpose is to prevent performance deterioration and extend the life of the process tube.
第１図は本発明の原理説明図で、図中、１はシリコンプ
ロセスチューブ、１ａはシリコンプロセスチューブの外
壁面、１ｂは同じく内壁面、ＩＣは同じく内部、２は金
属不純物の拡散抑制層、３は加熱炉、４はヒータ、５は
半導体基板を示す。FIG. 1 is a diagram explaining the principle of the present invention, in which 1 is a silicon process tube, 1a is the outer wall surface of the silicon process tube, 1b is the inner wall surface, IC is the same inside, 2 is a metal impurity diffusion suppressing layer, 3 is a heating furnace, 4 is a heater, and 5 is a semiconductor substrate.
前記課題は第１図に示すように、加熱炉（３）及び、該
加熱炉（３）に挿入されたシリコンからなるプロセスチ
ューブ（１）を有し、該プロセスチューブの外壁面（１
ａ）、内壁面（ｌｂ）若しくは内部（ＩＣ）の少なくと
も何れかに、該プロセスチューブ（１）の管壁に沿って
管状に、該シリコン中よりも金属不純物の拡散係数の小
さい物質からなる金属不純物の拡散抑制層（２）を設け
てなる本発明による半導体製造装置によって解決される
。As shown in FIG.
a) At least on the inner wall surface (lb) or inside (IC), a metal made of a substance having a smaller diffusion coefficient of metal impurities than in the silicon is formed in a tubular shape along the tube wall of the process tube (1). This problem is solved by the semiconductor manufacturing apparatus according to the present invention, which is provided with an impurity diffusion suppressing layer (2).
即ち本発明に係る半導体製造装置に用いるプロセスチュ
ーブは第１図に示すように、単結晶若しくは多結晶の高
純度シリコンからなるシリコンチューブ（１）により構
成することによって、変形温度を大幅に高め且つプロセ
スチューブの材料自体からの金属汚染をなくし、更にそ
のシリコンチューブ（１）外壁面（１ａ）、内壁面（１
ｂ）、または内部（１ｃ）の少な（とも何れか、例えば
外壁面（ｌａ）に、シリコンチューブ（１）の管壁に沿
って管状に、シリコンに比べて高温における遷移金属の
拡散係数が極度に小さい金属不純物の拡散抑制層（２）
を設け、これによって加熱炉（３）のヒータ（４）から
外壁面（１ａ）を介してプロセスチューブ（１）内に侵
入した遷移金属が、プロセスチューブ（１）内を拡散し
てプロセスチューブの内壁面（１ｂ）に到達する時間を
大幅に遅延させ、これによってプロセスチューブ（１）
内に配置されている半導体基板（５）の高温熱処理にお
ける上記遷移金属による汚染を防止すると同時に、プロ
セスチューブ内壁面（１ｂ）の汚染の度合によって決め
られるプロセスチューブ寿命を延長するものである。That is, as shown in FIG. 1, the process tube used in the semiconductor manufacturing apparatus according to the present invention is constructed of a silicon tube (1) made of single-crystal or polycrystalline high-purity silicon, thereby significantly increasing the deformation temperature and It eliminates metal contamination from the material of the process tube itself, and also eliminates metal contamination from the silicon tube (1), outer wall surface (1a), and inner wall surface (1a).
b) or in the interior (1c) (either, for example, on the outer wall surface (la), tubularly along the tube wall of the silicon tube (1), the diffusion coefficient of transition metals at high temperatures compared to silicon is extremely Diffusion suppression layer for small metal impurities (2)
As a result, the transition metal that has entered the process tube (1) from the heater (4) of the heating furnace (3) through the outer wall surface (1a) diffuses inside the process tube (1), and the transition metal enters the process tube (1) through the outer wall surface (1a). This significantly delays the time it takes for the process tube (1) to reach the inner wall surface (1b).
This prevents contamination by the transition metal during high-temperature heat treatment of the semiconductor substrate (5) disposed inside the tube, and at the same time extends the life of the process tube, which is determined by the degree of contamination on the inner wall surface (1b) of the process tube.
以下本発明を、図示実施例により具体的に説明する。 The present invention will be specifically explained below with reference to illustrated embodiments.
第２図、第３図、第４図はそれぞれ本発明に係るプロセ
スチューブの第１、第２、第３の実施例の要部を模式的
に示す軸方向の断面図（ａ）及び軸に直角方向の断面図
（ハ）、第５図は本発明が適用された半導体製造装置の
一例を示す模式側断面図である。FIGS. 2, 3, and 4 are axial cross-sectional views (a) and axial sectional views schematically showing essential parts of the first, second, and third embodiments of the process tube according to the present invention, respectively. A cross-sectional view in the right angle direction (c) and FIG. 5 are schematic side cross-sectional views showing an example of a semiconductor manufacturing apparatus to which the present invention is applied.
全図を通じ同一対象物は同一符合で示す。Identical objects are indicated by the same reference numerals throughout the figures.
本発明に係る半導体製造装置に用いられるプロセスチュ
ーブは、第２図に示す第１の実施例のように、例えば５
１［ｌ程度の肉厚を有する内径２２０ Ｍｉφ程度の単
結晶若しくは多結晶シリコンからなるシリコンプロセス
チューブ１１の外壁面１’ｌａ’と内壁面１１ｂの全面
に、遷移金属不純物の拡散抑制層となる厚さ１０ｕｍ程
度の二酸化シリコン（ＳｉＯ□）膜１２Ａと１２Ｂが形
成されてなっている。The process tube used in the semiconductor manufacturing apparatus according to the present invention is, for example, five
A diffusion suppressing layer for transition metal impurities is formed on the entire outer wall surface 1'la' and inner wall surface 11b of the silicon process tube 11 made of single crystal or polycrystalline silicon with an inner diameter of about 220 Miφ and a wall thickness of about 1[l]. Silicon dioxide (SiO□) films 12A and 12B having a thickness of about 10 um are formed.
この構造のプロセスチューブは、シリコンチューブ１１
を、その外径よりも大きい炉の中に入れ、１０００°Ｃ
１１０気圧程度の高温高圧中に純水を導入して行う高圧
酸化、或いは酸素（０□）十水素（Ｈ２）の燃焼ガスに
よるパイロジェニック酸化等の方法によりシリコンチュ
ーブの全面を酸化することによって形成される。A process tube with this structure is a silicon tube 11
is placed in a furnace larger than its outer diameter and heated to 1000°C.
Formed by oxidizing the entire surface of the silicon tube using methods such as high-pressure oxidation by introducing pure water into a high temperature and high pressure environment of approximately 110 atmospheres, or pyrogenic oxidation using combustion gas of oxygen (0□) and hydrogen (H2). be done.
そしてこの構造のプロセスチューブにおいては、シリコ
ンの融点が１４１２°Ｃと極めて高温であるために、１
１００〜１２００程度の高温熱処理では変形を生ずるこ
とがない。In a process tube with this structure, since the melting point of silicon is extremely high at 1412°C,
No deformation occurs during high-temperature heat treatment at temperatures of about 100 to 1,200 degrees Celsius.
また、ＳｉＯ□膜１２Ａ 、１２Ｂ中の遷移金属例えば
Ｆｅの拡散係数が、高温熱処理が行われる例えば１１０
０°Ｃにおいてはシリコン中の拡散係数５Ｘ１０−ｈｃ
ｍ２／ｓｅｃ程度に対してＩ Ｘｌ０−１０ｃｍ”／ｓ
ｅｃ程度と約５桁程度低いノテ、Ｓｉｎｇ膜１２Ａ 、
１２ＢがＦｅ（７）拡散を抑制するバリアとして働き
、加熱炉のヒータから蒸発してプロセスチューブの外壁
面（厳密には外壁面に形成されているＳｉＯ□膜１２膜
上２Ａ上着したＦｅが同プロセスチューブの内壁面に出
て来る量は、シリコンのみからなるプロセスチューブに
対して約１／１００程度まで減少させることができる。Further, the diffusion coefficient of the transition metal such as Fe in the SiO□ films 12A and 12B is 110, for example, when the high temperature heat treatment is performed.
At 0°C, the diffusion coefficient in silicon is 5X10-hc
I Xl0-10cm”/s for about m2/sec
Note that the Sing film 12A is about 5 orders of magnitude lower than the ec level,
12B acts as a barrier to suppress Fe(7) diffusion, and the Fe deposited on 2A on the outer wall surface of the process tube (more precisely, on the SiO□ film 12 formed on the outer wall surface) is evaporated from the heater of the heating furnace. The amount coming out on the inner wall surface of the process tube can be reduced to about 1/100 of that of a process tube made only of silicon.
また、プロセスチューブの内壁面が限界のＦｅ濃度に達
するまでの時間も、１００倍程度に遅延させることがで
きる。なお、上記Ｆｅの拡散によるプロセスチューブ内
壁面の汚染量の減少によるプロセスチューブ寿命の延長
は、下記に示す（１）式を基にし、Ｓｉｎ、の膜厚２０
μｍ、Ｓｉチューブの肉厚５閣として近位計算によって
求めたものである。Further, the time required for the inner wall surface of the process tube to reach the critical Fe concentration can also be delayed by about 100 times. In addition, the extension of the process tube life due to the reduction in the amount of contamination on the inner wall surface of the process tube due to the diffusion of Fe is calculated based on the formula (1) shown below.
μm, which was determined by proximal calculation as the five wall thicknesses of the Si tube.
Ｃ／（：ｏ”： ［２ｒ／ｌ＋ｒ ）
ｅｒｆｃ （ｘｏ／２（Ｄｏｔ）””＋ｘ／２（Ｄｔ）
””）・・・・（１）式
％式％）
ｘ：ｓｉチューブの肉厚
［１０： Ｓｉｎ、中のＦｅの拡散係数ＤｓＳｉ中のＦ
ｅの拡散係数
また本発明に係るプロセスチューブは、第３図に示す第
２の実施例のように、例えば第１の実施例同様のシリコ
ンプロセスチューブ１１の外壁面１１ａと内壁面１１ｂ
の全面に、遷移金属不純物の拡散抑制層（バリア）とな
る厚さ１０μｍ程度のＳｉＣ膜２２Ａと２２Ｂがコーテ
ィングされてなっている。C/(:o”: [2r/l+r) erfc (xo/2(Dot)””+x/2(Dt)
"")... (1) Formula % Formula %) x: Wall thickness of Si tube [10: Sin, diffusion coefficient of Fe in DsF in Si
Further, the process tube according to the present invention has a diffusion coefficient of e, as in the second embodiment shown in FIG.
The entire surface is coated with SiC films 22A and 22B having a thickness of about 10 μm and serving as a diffusion suppressing layer (barrier) for transition metal impurities.
このＳｉＣのコーテイング膜は、
［５ｉＣ１，＋Ｈ２＋ＣＣ１４）等の混合ガスの気相成
長反応を利用して形成でき、その膜厚は前記Ｓｉ０ｇ膜
１２Ａ 、１２Ｂよりも容易に厚く形成することができ
る。This SiC coating film can be formed using a vapor phase growth reaction of a mixed gas such as [5iC1,+H2+CC14), and its film thickness can be easily formed to be thicker than the Si0g films 12A and 12B.
この構造においては、ＳｉＣ内のＦｅの拡散係数がＳｉ
ｎｇに比べて１０分の１程度と非常に小さく、且つ膜厚
を容易に一層厚く形成することができるので、プロセス
チューブの内壁面に出て来るＦｅの量は第１の実施例よ
り更に減少でき、またプロセスナューブの寿命も一層延
長される。In this structure, the diffusion coefficient of Fe in SiC is
The amount of Fe coming out on the inner wall of the process tube is further reduced than in the first embodiment because it is very small, about one-tenth of ng, and the film thickness can be easily formed even thicker. This also further extends the life of the process tube.
また本発明に係るプロセスチューブは、第４図に示す第
３の実施例のように、シリコンプロセスチューブ３１の
外壁面３１ａと内壁面３１ｂに設けられ金属不純物の拡
散を抑制する厚さ１０μｍ程度のＳｉｎｇ膜３２Ａ 、
３２Ｂの他に内部３１ｃにも、金属不純物の拡散を抑制
する円筒状の例えば厚さ２０ａｍ程度の５ｉ０２膜３２
Ｃが設けられた構造を有する。Further, as in the third embodiment shown in FIG. 4, the process tube according to the present invention has a thickness of about 10 μm provided on the outer wall surface 31a and the inner wall surface 31b of the silicon process tube 31 to suppress the diffusion of metal impurities. Sing film 32A,
In addition to 32B, inside 31c is also a cylindrical 5i02 film 32 with a thickness of about 20 am, for example, to suppress the diffusion of metal impurities.
It has a structure in which C is provided.
この構造のプロセスチューブ３１は、前記高圧酸化酸い
はパイロジェニック酸化等により外壁面３１ａ及び内壁
面３１ｃ＋に、例えば１０μｍ程度の厚さの５ｉＯｚ膜
３２Ａと３２Ｃ３を形成した第１のシリコンチューブ３
１Ａ内に、同様な方法で外壁面３１ｃ２及び内壁面３１
ｂに５ｉ０２膜３２Ｃ２及び３２Ｂを形成した、前記前
記第１のシリコンチューブ３１Ａの内径にしっくりと嵌
入する外径を有する第２のシリコンチューブ３１Ｂを挿
入し、１１００℃程度の高温熱処理を加えることにより
、上記ＳｉＯ□膜３２Ｃ３と３２０２即ち３２Ｃを介し
て第１のシリコンチューブ３１Ａと第２のシリコンチュ
ーブ３１Ｂを接着することにより形成される。そしてこ
の構造においては、プロセスチューブ３１の内部にも金
属不純物の拡散を抑制する５ｉ（ｈ膜３２Ｃが介在する
ので、プロセスチューブ内壁面３１Ｂの金属汚染量は前
記実施例より減少し、プロセスチューブの汚染寿命も一
層延長される。The process tube 31 having this structure is a first silicon tube 3 in which 5iOz films 32A and 32C3 having a thickness of, for example, about 10 μm are formed on the outer wall surface 31a and the inner wall surface 31c+ by the high-pressure oxidation acid or pyrogenic oxidation.
1A, the outer wall surface 31c2 and the inner wall surface 31 in the same manner.
By inserting a second silicone tube 31B having an outer diameter that fits snugly into the inner diameter of the first silicone tube 31A on which 5i02 films 32C2 and 32B are formed on b, and applying high temperature heat treatment at about 1100°C. , is formed by bonding the first silicon tube 31A and the second silicon tube 31B via the SiO□ films 32C3 and 3202, ie, 32C. In this structure, since the 5i (h film 32C that suppresses the diffusion of metal impurities is also present inside the process tube 31), the amount of metal contamination on the process tube inner wall surface 31B is reduced compared to the above embodiment, and the process tube is The contamination life is also further extended.
なお、この実施例において金属不純物拡散抑制層は前記
気相成長によるＳｉＣ層により形成してもよい。In this embodiment, the metal impurity diffusion suppression layer may be formed of the SiC layer formed by vapor phase growth.
第５図は、熱酸化、拡散アニール等半導体基板の高温熱
処理を行うために、前記第１の実施例に示したシリコン
プロセスチューブ１１を用いて構成した半導体製造装置
の一例を示したもので、図中、１１はシリコンプロセス
チューブ、１２Ａ 、１２Ｂは前記１０ｔｔｍ程度の厚
さを有するＳｉ０ｇ膜、１３は管状加熱炉、１４はカン
タル等からなるヒータ、１５はガス導入口、１６はガス
排出口、１７は石英等からなるシャッタ（蓋）、１８は
保温材、１９は石英等よりなり半導体基板を立て並べる
ボート、２０は高温熱処理が行われる被処理半導体基板
を示している。FIG. 5 shows an example of a semiconductor manufacturing apparatus constructed using the silicon process tube 11 shown in the first embodiment, in order to perform high-temperature heat treatments such as thermal oxidation and diffusion annealing on semiconductor substrates. In the figure, 11 is a silicon process tube, 12A and 12B are Si0g films having a thickness of about 10 ttm, 13 is a tubular heating furnace, 14 is a heater made of Kanthal or the like, 15 is a gas inlet, 16 is a gas outlet, Reference numeral 17 indicates a shutter (lid) made of quartz or the like, 18 a heat insulating material, 19 a boat made of quartz or the like on which semiconductor substrates are arranged vertically, and 20 a semiconductor substrate to be processed to be subjected to high temperature heat treatment.
本発明に係るシリコンプロセスチューブにおいては、チ
ューブ自体が高純度を有し、且つプロセスチューブの外
壁面、内壁面、及び内部の少なくとも何れかに遷移金属
不純物の拡散抑制（バリア）層となる５ｉＯ１、ＳｉＣ
等の膜が形成されているので、上記第５図に示すような
半導体製造装置を用いて熱酸化、拡散等の工程において
、半導体基板に対して１１００℃以上の高温熱処理を行
った際、プロセスチューブ自体からの遷移金属の放出は
なく、且つプロセスチューブの外壁面を介しヒータから
プロセスチューブ内に侵入する遷移金属の拡散速度も大
幅に低下するので、この拡散遷移金属のプロセスチュー
ブ内壁面からの放出量も大幅に減少し、半導体基板の極
端な遷移金属汚染が防止されると同時に、内壁面汚染の
度合を基準にして決められるプロセスチューブの寿命も
延長される。In the silicon process tube according to the present invention, the tube itself has high purity, and 5iO1 serves as a diffusion suppression (barrier) layer for transition metal impurities on at least one of the outer wall surface, inner wall surface, and inside of the process tube. SiC
Because films such as The transition metal is not released from the tube itself, and the diffusion rate of the transition metal that enters the process tube from the heater through the outer wall of the process tube is greatly reduced. Emissions are also significantly reduced, preventing extreme transition metal contamination of semiconductor substrates, and at the same time extending the life of the process tube, which is determined based on the degree of inner wall contamination.
またシリコンの融点が高いのでチューブの変形も生じな
い。Furthermore, since the melting point of silicon is high, the tube does not deform.
以上説明のように本発明に係る半導体製造装置において
は、高温熱処理における半導体基板の遷移金属による汚
染を防止すると同時にプロセスチューブの寿命を延長さ
せ、且つプロセスチューブの変形をも防止する、
従って本発明は、半導体装置の性能及び歩留りの向上、
製造費用の低減に有効である。As explained above, in the semiconductor manufacturing apparatus according to the present invention, it is possible to prevent contamination of the semiconductor substrate with transition metals during high-temperature heat treatment, extend the life of the process tube, and also prevent deformation of the process tube. Therefore, the present invention is to improve the performance and yield of semiconductor devices,
It is effective in reducing manufacturing costs.
第１図は本発明の原理説明図、
第２図、第３図、第４図はそれぞれ本発明に係るプロセ
スチューブの第１、第２、第３の実施例の要部を模式的
に示す軸方向の断面図（ａ）及び軸に直角方向の断面図
（ｂ）、
第５図は本発明が適用された半導体製造装置の一例を示
す模式側断面図である。
図において、
１．１１．３１はシリコンプロセスチューブ、ｌａ、
ｌｌａ 、 ３１ａは外壁面、ｌｂ、 ｌｌｂ 、 ３
１ｂは内壁面、３．１３は加熱炉、
４．１４はヒータ、
５．２０は半導体基板、
１２Ａ 、 １２Ｂ 、 ３２Ａ 、 ３２８２２Ａ
、 ２２Ｂ −優薄はＳｉＣ
を示す。
膜
２Ｃ
はＳｉ０ｇ膜、FIG. 1 is a diagram illustrating the principle of the present invention, and FIGS. 2, 3, and 4 schematically illustrate the main parts of the first, second, and third embodiments of the process tube according to the present invention, respectively. FIG. 5 is a schematic side sectional view showing an example of a semiconductor manufacturing apparatus to which the present invention is applied. In the figure, 1.11.31 is the silicon process tube, la,
lla, 31a is the outer wall surface, lb, llb, 3
1b is an inner wall surface, 3.13 is a heating furnace, 4.14 is a heater, 5.20 is a semiconductor substrate, 12A, 12B, 32A, 32822A
, 22B-excellent indicates SiC. Film 2C is a Si0g film,
Claims (1)
からなるプロセスチューブ（１）を有し、該プロセスチ
ューブの外壁面（１ａ）、内壁面（１ｂ）若しくは内部
（１ｃ）の少なくとも何れかに、該プロセスチューブ（
１）の管壁に沿って管状に、該シリコン中よりも金属不
純物の拡散係数の小さい物質からなる金属不純物の拡散
抑制層（２）を設けてなることを特徴とする半導体製造
装置。It has a heating furnace (3) and a process tube (1) made of silicon inserted into the heating furnace (3), and at least the outer wall surface (1a), inner wall surface (1b), or inside (1c) of the process tube. Either the process tube (
A semiconductor manufacturing apparatus characterized in that a metal impurity diffusion suppressing layer (2) made of a substance having a smaller diffusion coefficient of metal impurities than that in the silicon is provided in a tubular shape along the tube wall of (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4473390A JPH03246932A (en) | 1990-02-26 | 1990-02-26 | Manufacture equipment for semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4473390A JPH03246932A (en) | 1990-02-26 | 1990-02-26 | Manufacture equipment for semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03246932A true JPH03246932A (en) | 1991-11-05 |
Family
ID=12699649
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4473390A Pending JPH03246932A (en) | 1990-02-26 | 1990-02-26 | Manufacture equipment for semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03246932A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012053332A1 (en) * | 2010-10-19 | 2012-04-26 | 昭和電工株式会社 | Group-iii-nitride semiconductor element and multi-wavelength-emitting group-iii-nitride semiconductor layer |
-
1990
- 1990-02-26 JP JP4473390A patent/JPH03246932A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012053332A1 (en) * | 2010-10-19 | 2012-04-26 | 昭和電工株式会社 | Group-iii-nitride semiconductor element and multi-wavelength-emitting group-iii-nitride semiconductor layer |
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