JPH03246851A - Electron emitting element - Google Patents
Electron emitting elementInfo
- Publication number
- JPH03246851A JPH03246851A JP2043012A JP4301290A JPH03246851A JP H03246851 A JPH03246851 A JP H03246851A JP 2043012 A JP2043012 A JP 2043012A JP 4301290 A JP4301290 A JP 4301290A JP H03246851 A JPH03246851 A JP H03246851A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductor layer
- electron
- photoconductor
- electrons
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 107
- 239000012212 insulator Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000605 extraction Methods 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims 1
- 238000010292 electrical insulation Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000011521 glass Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910025794 LaB6 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子顕微鏡、電子ビーム露光装置、ＣＲＴ等
、各種電子ビーム応用装置の電子発生源として利用する
ことができる電子放出素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electron-emitting device that can be used as an electron generation source for various electron beam application devices such as an electron microscope, an electron beam exposure device, and a CRT.
従来の技術
従来、電子顕微鏡、電子ビーム露光装置、ＣＲＴ等にお
ける電子発生源として、熱電子を放出する熱陰極が用い
られている。しかし、熱陰極は陰極自体を加熱する加熱
手段を必要とし、また、加熱に伴うエネルギー損失が生
じるなどの問題がある。2. Description of the Related Art Conventionally, a hot cathode that emits thermoelectrons has been used as an electron generation source in an electron microscope, an electron beam exposure device, a CRT, and the like. However, hot cathodes require heating means to heat the cathode itself, and there are also problems such as energy loss due to heating.
そこで、近年、加熱を必要としない電子放出素子、いわ
ゆる冷陰極に関する研究が行われ、いくつかのタイプの
電子放出素子が提案されている。Therefore, in recent years, research has been conducted on electron-emitting devices that do not require heating, so-called cold cathodes, and several types of electron-emitting devices have been proposed.
例えば、ＰＮ接合に逆バイアス電圧を印加し、電子なだ
れ降伏現象を起こさせて素子外へ電子を放出させるよう
にした電子放出素子、または、電界集中の生じやすい針
状形状をした金属に対し、電圧を印加して局所的に高密
度な電界を発生させ、金属から素子外へ電子を放出させ
る電界放出型の電子放出素子、または、金属層−絶縁体
層−金属層の３層構造で、上記両金属層に電圧を印加す
ることより、トンネル効果て絶縁体層を通過してきた電
子を金属層表面から素子外へ放出させるＭＩＭ型の電子
放出素子などがある。For example, for an electron-emitting device in which a reverse bias voltage is applied to a PN junction to cause an electron avalanche breakdown phenomenon to cause electrons to be emitted outside the device, or for a metal with an acicular shape that tends to cause electric field concentration, A field-emission type electron-emitting device that applies a voltage to generate a locally high-density electric field and emits electrons from the metal to the outside of the device, or a three-layer structure of a metal layer, an insulator layer, and a metal layer. There is an MIM type electron-emitting device in which electrons that have passed through the insulating layer are emitted from the surface of the metal layer to the outside of the device due to a tunnel effect by applying a voltage to both of the metal layers.
上記電界放出型の電子放出素子として、例えば、ジャー
ナル・オブ・アプライド・フィジックス３９巻、７号、
３５０４−＜−シ、１９６８年（Ｊｏｕｒｎａｌｏｆ
Ａｐｐｌ ｉｅｄ Ｐｈｙｓｉｃｓ、 Ｖｏｌ ３ｇ、
Ｎｏ７、Ｐ３５０４．１９６８ ）に記載されている構
成が知られている。As the field emission type electron emitting device, for example, Journal of Applied Physics Vol. 39, No. 7,
3504-<-shi, 1968 (Journalof
Applied Physics, Vol 3g,
No. 7, P3504.1968) is known.
以下、この電子放出素子の概略について第４図に示す断
面図を参照しながら説明する。The outline of this electron-emitting device will be explained below with reference to the cross-sectional view shown in FIG.
第４図に示すように、基板４１上に下部電極４２が形成
されている。下部電極４２上には電界集中の生じやすい
形状の電子放出部４３が形成されると共に、電子放出部
４３の周囲において絶縁体層４４が形成されている。絶
縁体層４４上には引出し電極４５が形成されている。As shown in FIG. 4, a lower electrode 42 is formed on a substrate 41. An electron emitting section 43 having a shape that tends to cause electric field concentration is formed on the lower electrode 42, and an insulating layer 44 is formed around the electron emitting section 43. A lead electrode 45 is formed on the insulator layer 44 .
そして、引出し電極４５が正、下部電極４２が負となる
ように電源４６を接続し、電子放出部４３の材料で決す
る所定の電圧以上の電圧を印加することにより、電界の
集中する電子放出部４３より電子を放出させることがで
きる。Then, by connecting the power source 46 so that the extraction electrode 45 is positive and the lower electrode 42 is negative, and applying a voltage higher than a predetermined voltage determined by the material of the electron emitting part 43, the electron emitting part where the electric field is concentrated is applied. 43 can emit electrons.
また、上記ＭＩＭ型の電子放出素子として、例えば、特
開昭６３−６７１７号公報に記載された構成が知られて
いる。以下、この電子放出素子の概略について第５図に
示す斜視図を参照しながら説明する。Further, as the above-mentioned MIM type electron-emitting device, for example, the structure described in Japanese Patent Laid-Open No. 63-6717 is known. The outline of this electron-emitting device will be explained below with reference to the perspective view shown in FIG.
第５図に示すように、基板５１上に帯状の金属層５２が
形成され、金属層５２が絶縁体層５３で覆われている。As shown in FIG. 5, a strip-shaped metal layer 52 is formed on a substrate 51, and the metal layer 52 is covered with an insulating layer 53.
絶縁体層５３上には金属層５２と直交方向で帯状の金属
層５４が形成されている。A band-shaped metal layer 54 is formed on the insulator layer 53 in a direction perpendicular to the metal layer 52 .
そして、金属層５４を正とし、金属層５２を負として両
者間に所定の電圧を印加することにより、両者が交差す
る領域から電子を放出させることができる。Then, by setting the metal layer 54 as positive and the metal layer 52 as negative and applying a predetermined voltage between them, electrons can be emitted from the region where they intersect.
また、アレー化されたＭＩＭ型の電子放出素子として、
例えば、ジャパン・デイスプレー ８６．５１２へｉ）
（Ｊａｐａｎ Ｄｉｓｐｌａｙ Ｂ６、Ｐ５１２
）に記載されている構成が知られている。以下、このア
レー状の電子放出素子について第６図（（示す斜視図を
参照しながら説明する。In addition, as an arrayed MIM type electron-emitting device,
For example, Japan Display 86.512 i)
(Japan Display B6, P512
) is known. Hereinafter, this array-shaped electron-emitting device will be explained with reference to the perspective view shown in FIG.
第６図に示すように、基板６１上に複数条の上部電極６
２ａ、 ６２ｂ、 ６２Ｃ，・−・と下部電極６３ａ１
６３ｂ、６３Ｃ１・・・が交差して形成され、各交差部
に、例えば、第４図に示したような電子放出部６４が形
成されている。As shown in FIG. 6, a plurality of upper electrodes 6 are formed on a substrate 61.
2a, 62b, 62C, ... and the lower electrode 63a1
63b, 63C1, . . . are formed to intersect with each other, and an electron emitting portion 64 as shown in FIG. 4, for example, is formed at each intersection.
そして、電子を放出させたい所望の交差部を共有する上
部電極と下部電極、例えば、６２ａと６３３とに所定の
電圧を印加することにより、両者の交差部の電子放出部
６４から電子を放出させることができる。Then, by applying a predetermined voltage to the upper electrode and the lower electrode, for example, 62a and 633, which share a desired intersection where electrons are to be emitted, electrons are emitted from the electron emitting part 64 at the intersection between the two. be able to.
しかし、電子放出素子をアレー化し、多数箇所の電子放
出領域から電子を放出させようとすると、第６図から明
らかなように、多数の上部電極６２ａ１６２ｂ、 ６２
Ｃ１・・・と下部電極６３ａ、 ６３ｂ、 ６３Ｃ，、
−・を形成しなければならず、駆動するための配線が複
雑となるなどの問題があった。However, when electron-emitting devices are arranged in an array and electrons are emitted from a large number of electron-emitting regions, as is clear from FIG.
C1... and lower electrodes 63a, 63b, 63C,...
- and must be formed, which poses problems such as complicated driving wiring.
そこで、上記問題を解決するため、特開平１−・２０９
６４３号公報に記載されているような構成が提案されて
いる。以下、このアレー状の電子放出素子について第７
図に示す断面図を参照しながら説明する。Therefore, in order to solve the above problem, JP-A-1-209
A configuration as described in Japanese Patent No. 643 has been proposed. The seventh section regarding this array-like electron-emitting device will be described below.
The explanation will be given with reference to the cross-sectional view shown in the figure.
第７図に示すように、基板７１上に複数条の下部電極７
２が設けられ、下部電極７２上に光スイツチング層７３
が形成され、光スイッチング層７３上に電子放出領域と
なる複数の導電層７４がが設けられ、導電層７４が絶縁
性薄膜７５て覆われている。絶縁性薄膜７５上には上部
電極７６が形成され、上部電極７６上に電子放出領域の
周囲で絶縁層７７が形成され、絶縁層７７上に加速電極
７８が形成されている。As shown in FIG. 7, a plurality of lower electrodes 7 are formed on a substrate 71.
2 is provided, and a light switching layer 73 is provided on the lower electrode 72.
A plurality of conductive layers 74 serving as electron emission regions are provided on the optical switching layer 73, and the conductive layers 74 are covered with an insulating thin film 75. An upper electrode 76 is formed on the insulating thin film 75, an insulating layer 77 is formed on the upper electrode 76 around the electron emission region, and an accelerating electrode 78 is formed on the insulating layer 77.
そして、下部電極７２と上部電極７６とに電源７９によ
り電圧を印加しておと、下部電極７２側から光８０を入
射し、光の照射された光スイツチング層７３を電気的高
抵抗状態から低抵抗状態へ遷移させ、光入射領域の反対
側の電極７６面から電子を放出させることができる。Then, a voltage is applied to the lower electrode 72 and the upper electrode 76 by the power supply 79, and then light 80 is incident from the lower electrode 72 side, changing the irradiated light switching layer 73 from a high electrical resistance state to a low electrical resistance state. It is possible to make a transition to a resistive state and emit electrons from the surface of the electrode 76 on the opposite side of the light incident region.
発明が解決しようとする課題
しかし、上記従来例のアレー状の電子放出素子の内、前
者の構成では、上記のように駆動用の配線が複雑である
という問題があった。一方、光スイツチング層を介在さ
せた後者の構成では、光照射により所望の電子放出領域
から電子を放出することができるが、光照射時の光の拡
散による光スイツチング層におけるクロストークによシ
、隣接電子放出部からも電子を放出する誤動作のおそれ
があるという問題があった。Problems to be Solved by the Invention However, among the conventional array-shaped electron-emitting devices described above, the former configuration has a problem in that the driving wiring is complicated as described above. On the other hand, in the latter configuration in which a light switching layer is interposed, electrons can be emitted from a desired electron emission region by light irradiation, but due to crosstalk in the light switching layer due to light diffusion during light irradiation, There is a problem in that there is a risk of malfunction in which electrons are also emitted from adjacent electron emitting parts.
本発明は、上記のような従来技術の問題を解決するもの
であり、駆動用の配線を簡素化することができると共に
、隣接電子放出領域の誤動作を防止することができるよ
うにした電子放出素子を提供することを目的とするもの
である。The present invention solves the problems of the prior art as described above, and provides an electron-emitting device in which driving wiring can be simplified and malfunctions of adjacent electron-emitting regions can be prevented. The purpose is to provide the following.
課題を解決するための手段
上記問題を達成するための本発明の技術的解決手段は、
第１に所定の光に対して透過性を有する基板と、この基
板上に形成され、所定の光に対して不透明で、複数の開
孔部を有する第１の導電体層と、上記各開孔部に上記第
１の導電体層と接触して形成された光導電体層と、この
光導電体層と接触して形成された第２の導電体層と、上
記光導電体層と上記第２の導電体層の周囲に形成された
絶縁体層と、上記第２の導電体層上に形成され、電子を
透過させるための絶縁体層と、この絶縁体層上に形成さ
れ、電子を放出させるための第３の導電体層とを備えた
ものである。Means for Solving the Problems The technical solutions of the present invention for achieving the above problems are as follows:
First, a substrate is transparent to a predetermined light, a first conductor layer formed on the substrate is opaque to the predetermined light, and has a plurality of apertures, and each of the apertures is formed on the substrate. a photoconductor layer formed in the hole in contact with the first conductor layer; a second conductor layer formed in contact with the photoconductor layer; an insulator layer formed around the second conductor layer; an insulator layer formed on the second conductor layer to transmit electrons; and an insulator layer formed on the insulator layer to transmit electrons. and a third conductor layer for emitting .
第２に、所定の光に対して透過性を有する基板と、この
基板上に形成された透明な第１の導電体層と、この透明
な第１の導電体層の上側と下側の少なくとも一方に形成
され、所定の光に対して不透明で、複数の開孔部を有す
る遮光体層と、上記透明な第１の導電体層と接触し、上
記遮光体層の各開孔部に対応して形成された光導電体層
と、この光導電体層と接触して形成された第２の導電体
層と、上記光導電体層と上記第２の導電体層の周囲に形
成された絶縁体層と、上記第２の導電体層上に形成され
、電子を透過させるための絶縁体層と、この絶縁体層上
に形成され、電子を放出させるための第３の導電体層と
を備えたものである。Second, a substrate that is transparent to a predetermined light, a transparent first conductor layer formed on this substrate, and at least an upper side and a lower side of this transparent first conductor layer. A light shielding layer is formed on one side, is opaque to a predetermined light, and has a plurality of apertures, and is in contact with the transparent first conductor layer and corresponds to each aperture of the light shielding layer. a second conductor layer formed in contact with the photoconductor layer; a photoconductor layer formed around the photoconductor layer and the second conductor layer; an insulator layer, an insulator layer formed on the second conductor layer to transmit electrons, and a third conductor layer formed on the insulator layer to emit electrons. It is equipped with the following.
第３に、所定の光に対して透過性を有する基板と、この
基板上に形成され、所定の光に対して不透明で、複数の
開孔部を有する導電体層と、上記各開孔部に上記導電体
層と接触して形成された光導電体層と、この光導電体層
の周囲に形成された絶縁体層と、上記光導電体層上に形
成された電子放出部と、この電子放出部の周囲に形成さ
れた絶縁体層と、この絶縁体層上に形成された引出し電
極とを備えたものである。Third, a substrate that is transparent to a predetermined light; a conductive layer formed on the substrate that is opaque to the predetermined light and has a plurality of apertures; and each of the apertures. a photoconductor layer formed in contact with the conductor layer; an insulator layer formed around the photoconductor layer; an electron-emitting region formed on the photoconductor layer; It includes an insulating layer formed around an electron emitting part and an extraction electrode formed on this insulating layer.
作 用
したがって、第１の技術的解決手段によれば、第１の導
電体層と第３の導電体層とに所定の電圧を印加しておと
、基板側より所望の電子放出領域に対応する第１の導電
体層の開孔部より光導電体層に独立に、あるいは時間順
次で所定の時間光照射を行うことにより、当該電子放出
領域における光導電体層を電気的絶縁状態から電気的導
通状態にし、第１の導電体層と当該電子放出領域の第２
の導電体層を電気的に接続し、絶縁体層のトンネル現象
により第３の導電体層から所定の時間だけ電子を放出・
させることができる。Therefore, according to the first technical solution, by applying a predetermined voltage to the first conductive layer and the third conductive layer, a desired electron emission region can be targeted from the substrate side. By irradiating the photoconductor layer with light for a predetermined time independently or sequentially through the openings of the first conductor layer, the photoconductor layer in the electron emission region is changed from an electrically insulated state to an electrically insulated state. the first conductor layer and the second conductor layer of the electron emitting region.
The third conductor layer is electrically connected, and electrons are emitted from the third conductor layer for a predetermined period of time due to the tunneling phenomenon of the insulator layer.
can be done.
第２の技術的解決手段によれば、透明な第１の導電体層
と第３の導電体層との間に所定の電圧を印加しておと、
基板側より所望の電子放出領域に対応する遮光体層の開
孔部より光導電体層に独立に、あるいは時間順序で所定
の時間光照射を行うことにより、当該電子放出領域にお
ける光導電体層を電気的絶縁状態から電気的導通状態に
し、第１の導電体層と当該電子放出領域における第２の
導電体層を電気的に接続し、絶縁体層のトンネル現象に
より第３の導電体層から所定の時間だけ電子を放出させ
ることができる。According to the second technical solution, after applying a predetermined voltage between the transparent first conductor layer and the third conductor layer,
By irradiating the photoconductor layer from the substrate side with light for a predetermined period of time either independently or in a time sequence through the openings of the light shielding layer corresponding to the desired electron-emitting regions, the photoconductor layer in the electron-emitting regions is irradiated with light. from an electrically insulating state to an electrically conductive state, electrically connecting the first conductive layer and the second conductive layer in the electron emission region, and forming the third conductive layer by the tunneling phenomenon of the insulating layer. Electrons can be emitted for a predetermined period of time.
第３の技術的解決手段によれば、導電体層と弓出し電極
との間に所定の電圧を印加しておと、基板側より所望の
電子放出領域に対応する導電体層の開孔部より光導電体
層に独立に、あるいは時間順序で所定の時間光照射を行
うことにより、当該電子放出領域における光導電体層を
電気的絶縁状態から電気的導通状態にし、導電体層と当
該電子放出領域の電子放出部を電気的に接続し、この電
子放出部から所定の時間だけ電子を放出させることがで
きる。According to the third technical solution, after applying a predetermined voltage between the conductor layer and the protruding electrode, an opening in the conductor layer corresponding to a desired electron emission area is opened from the substrate side. By irradiating the photoconductor layer with light for a predetermined period of time either independently or in a time sequence, the photoconductor layer in the electron emitting region is changed from an electrically insulating state to an electrically conductive state, and the conductor layer and the electrons are irradiated with light. The electron emitting parts of the emission region are electrically connected, and electrons can be emitted from the electron emitting parts for a predetermined period of time.
実施例
以下、本発明の実施例について図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
捷ず、本発明の第１の実施例について説明する。Without further details, a first embodiment of the present invention will be described.
第１図は本発明の第１の実施例における電子放出素子を
示す断面図である。FIG. 1 is a sectional view showing an electron-emitting device in a first embodiment of the present invention.
第１図に示すように、使用する所定の光に対して透過性
を有する基板１上に使用する所定の光に対して不透明な
第１の導電体層２が形成され、この第１の導電体層２は
複数の開孔部３を有している。各開孔部３には第１の導
電体層２と接触して光導電体層４が形成され、光導電体
層４上にはこれと接触して第２の導電体層５が形成され
、容箱２の導電体層５の外周部が開孔部３の外周におい
て第１の導電体層２に対峙されている。第１の導電体層
２上には光導電体層４と第２の導電体層５の周囲に絶縁
体層６が形成されて各電子放出領域部に電気的に分離さ
れている。この絶縁体層６は光導電体層４の導電性をも
たらす励起光に対し、不透明であるのが望ましい。第２
の導電体層５および絶縁体層６上には電子透過用の薄い
絶縁体層７が形成され、絶縁体層７上には電子放出用の
第３の導電体層８が形成されている。絶縁体層７Ｉｒｉ
トンイ・ル効果により、電子が第２の導電体層５から第
３の導電体層８へ透過する部分であるため、薄く形成す
る程、よりトンネル確率が高くなり、好ましいが、実際
的には３〜２０ ｎｍ程度である。As shown in FIG. 1, a first conductor layer 2 that is opaque to a predetermined light to be used is formed on a substrate 1 that is transparent to a predetermined light to be used. The body layer 2 has a plurality of apertures 3. A photoconductor layer 4 is formed in each opening 3 in contact with the first conductor layer 2, and a second conductor layer 5 is formed on the photoconductor layer 4 in contact therewith. , the outer periphery of the conductor layer 5 of the container box 2 faces the first conductor layer 2 at the outer periphery of the opening 3. An insulator layer 6 is formed on the first conductor layer 2 around the photoconductor layer 4 and the second conductor layer 5 to electrically isolate each electron emitting region. This insulator layer 6 is preferably opaque to the excitation light that makes the photoconductor layer 4 electrically conductive. Second
A thin insulator layer 7 for electron transmission is formed on the conductor layer 5 and insulator layer 6, and a third conductor layer 8 for electron emission is formed on the insulator layer 7. Insulator layer 7Iri
This is the part where electrons pass from the second conductor layer 5 to the third conductor layer 8 due to the Tony-Le effect, so the thinner it is formed, the higher the tunneling probability is, which is preferable, but in practice It is about 3 to 20 nm.
同様に第３の導電体層８も薄い程好ましいが、実際には
電導性との兼合いで５〜４０ｎｍ程度である。Similarly, the thickness of the third conductor layer 8 is preferably about 5 to 40 nm, taking into consideration the conductivity.
また、電子を放出させるための第３の導電体層８は第２
の導電体層５を覆うように形成され、電子放出素子の上
部電極となる。以上の構成でも電子放出素子として基本
的機能は満たすが、更に、第３の導電体層８上に電子放
出領域の外周で第２の導電体層５上を避けるように絶縁
体層９が形成され、各絶縁体層９上に引出し電極１ｏが
形成されている。Further, the third conductor layer 8 for emitting electrons is the second conductor layer 8.
The conductor layer 5 is formed to cover the conductor layer 5, and becomes the upper electrode of the electron-emitting device. Although the above configuration also fulfills the basic function as an electron-emitting device, an insulator layer 9 is further formed on the third conductor layer 8 at the outer periphery of the electron-emitting region so as to avoid the second conductor layer 5. An extraction electrode 1o is formed on each insulator layer 9.
以上の構成において、以下、その動作について説明する
。The operation of the above configuration will be described below.
電源１１により電子放出を生じさせるのに必要な所定の
電圧を第３の導電体層８が正、第１の導電体層２が負と
なるように印加しておと、基板１側から電子放出させた
い部分に対応する開孔部３に独立に、あるいは時間順次
で所定の光を所定の時間照射する。これにより、照射さ
れた開孔部３の光導電体層４のみを照射し、照射された
光導電体層４を電気的絶縁状態から電気的導通状態とす
る。その結果、第１の導電体層２と、電子放出させたい
電子放出領域の第２の導電体層５とが上記照射された光
導電体層４を介して電気的に接続され、電子を放出させ
たい電子放出領域の第２の導電体層５と第３の導電体層
８との間に電源１１により所定の電圧が印加され、トン
イ・ル現象により電子放出させたい電子放出領域の第３
の導電体層８より電子を放出させることができる。この
とと、上記のように第３の導電体層８上に第２の絶縁体
層９と引出し電極１０を形成することにより、電子をよ
シ放出しやすくシ、かつ放出電子のビーム制御を行うこ
とができる。By applying a predetermined voltage necessary to cause electron emission by the power supply 11 so that the third conductive layer 8 is positive and the first conductive layer 2 is negative, electrons are emitted from the substrate 1 side. A predetermined light is irradiated for a predetermined time to the aperture 3 corresponding to the portion to be emitted, either independently or sequentially. As a result, only the photoconductor layer 4 in the irradiated opening 3 is irradiated, and the irradiated photoconductor layer 4 is changed from an electrically insulating state to an electrically conducting state. As a result, the first conductor layer 2 and the second conductor layer 5 in the electron emitting region where electrons are to be emitted are electrically connected via the irradiated photoconductor layer 4, and emit electrons. A predetermined voltage is applied by the power supply 11 between the second conductive layer 5 and the third conductive layer 8 of the electron emitting region where electrons are to be emitted.
Electrons can be emitted from the conductor layer 8. In addition, by forming the second insulating layer 9 and the extraction electrode 10 on the third conductive layer 8 as described above, it is easier to emit electrons, and the beam control of the emitted electrons is made easier. It can be carried out.
次に、本発明の第２の実施例について説明する。Next, a second embodiment of the present invention will be described.
第２図は本発明の第２の実施例における電子放出素子を
示す断面図である。FIG. 2 is a sectional view showing an electron-emitting device according to a second embodiment of the present invention.
第２図に示すように、使用する所定の光に対して透過性
を有する基板１５上に所定の光に対して不透明な遮光体
層１６が形成され、この遮光体層１６は複数の開孔部１
７を有している。これら遮光体層１６および基板１５上
には透明な第１の導電体層１８が形成され、この透明な
第１の導電体層１８上に各開孔部１７に対応して光導電
体層１９が形成されている。各光導電体層１９上にこれ
と接触して第２の導電体層２０が形成され、各館２の導
電体層２０の外周部が開拉部１７の外周において、透明
な第１の導電体層１８に対峙されている。透明な第１の
導電体層１８上には光導電体層１９と第２の導電体層２
０の周囲に絶縁体層２１が形成されて各電子放出領域部
に電気的に分離されている。第２の導電体層２０および
絶縁体層２１上には電子透過用の薄い（膜厚２０ｎｍ以
下）絶縁体層２２が形成され、絶縁体層２２上には電子
放出用の第３の導電体層２３が形成されている。As shown in FIG. 2, a light shielding layer 16 that is opaque to a predetermined light is formed on a substrate 15 that is transparent to a predetermined light to be used, and this light shielding layer 16 has a plurality of apertures. Part 1
7. A transparent first conductor layer 18 is formed on the light shielding layer 16 and the substrate 15, and a photoconductor layer 19 is formed on the transparent first conductor layer 18 corresponding to each opening 17. is formed. A second conductor layer 20 is formed on and in contact with each photoconductor layer 19, and the outer periphery of the conductor layer 20 of each photoconductor 2 forms a transparent first conductor layer 20 at the outer periphery of the opening 17. It is facing body layer 18. A photoconductor layer 19 and a second conductor layer 2 are disposed on the transparent first conductor layer 18.
An insulator layer 21 is formed around 0 to electrically isolate each electron emitting region. A thin (thickness of 20 nm or less) insulator layer 22 for electron transmission is formed on the second conductor layer 20 and the insulator layer 21, and a third conductor for electron emission is formed on the insulator layer 22. A layer 23 is formed.
更に、必要に応じ、第３の導電体層２３上に電子放出領
域の外周で第２の導電体層２０を避けるように絶縁体層
２４が形成され、各絶縁体層２４上に引出し電極２５が
形成されている。Furthermore, if necessary, an insulator layer 24 is formed on the third conductor layer 23 at the outer periphery of the electron emission region so as to avoid the second conductor layer 20, and an extraction electrode 25 is formed on each insulator layer 24. is formed.
以上の構成において、以下、その動作について説明する
。The operation of the above configuration will be described below.
電源２６により第３の導電体層２３が正、透明な第１の
導電体層１８が負となるように所定の電圧を印加してお
と、基板１５側から電子放出させたい部分に対応する遮
光体層１６の開孔部１７に独立に、あるいは時間順次で
所定の光を所定の時間照射する。これにより、遮光体層
１６で必要な部分の光導電体層１９のみ照射され、以下
、上記第１の実施例と同様の動作原理により、所望の電
子放出領域からのみ電子放出させることができる。A predetermined voltage is applied by the power supply 26 so that the third conductor layer 23 is positive and the transparent first conductor layer 18 is negative, and the voltage is applied to the portion corresponding to the part where electrons are to be emitted from the substrate 15 side. A predetermined light is irradiated to the opening 17 of the light shielding layer 16 independently or sequentially for a predetermined time. As a result, only the necessary portions of the photoconductor layer 19 in the light shielding layer 16 are irradiated, and thereafter electrons can be emitted only from desired electron emitting regions using the same operating principle as in the first embodiment.
なお、上記実施例では、遮光体層１６を透明な第１の導
電体層１８の下側に形成した場合について説明したが、
遮光体層１６を透明な第１の導電体層１８の上側に形成
しても同様の効果を得ることができた。In addition, in the above embodiment, the case where the light shielding layer 16 was formed under the transparent first conductive layer 18 was explained.
A similar effect could be obtained by forming the light shield layer 16 above the transparent first conductor layer 18.
次に、本発明の第３の実施例について説明する。Next, a third embodiment of the present invention will be described.
第３図は本発明の第３の実施例における電子放出素子を
示す断面図である。FIG. 3 is a sectional view showing an electron-emitting device according to a third embodiment of the present invention.
第３図に示すように、使用する所定の光に対して透過性
を有する基板３１上に所定の光に対して不透明な導電体
層３２が形成され、この導電体層３２は複数の開孔部３
３を有している。各開孔部３３には導電体層３２♂接触
して光導電体層３４が形成され、導電体層３２上には光
導電体層３４の周囲に絶縁体層３５が形成されている。As shown in FIG. 3, a conductor layer 32 that is opaque to a predetermined light is formed on a substrate 31 that is transparent to a predetermined light to be used, and this conductor layer 32 has a plurality of openings. Part 3
It has 3. A photoconductor layer 34 is formed in contact with the conductor layer 32♡ in each opening 33, and an insulator layer 35 is formed on the conductor layer 32 and around the photoconductor layer 34.
各光導電体層３４を覆って電界集中の生じやすい形状の
電子放出部３６が形成され、絶縁体層３５上には電子放
出部３６の周囲に絶縁体層３７が形成され、絶縁体層３
７上に引出し電極３８が形成されている。本実施例の構
成は、いわゆる電界放出型であるので、電子放出部３６
は高融点で、低仕事関数の材料、例えば、Ｍｏ、 Ｌａ
Ｂ６、ＺｒＣ等を用いるのが望ましい。An electron emitting section 36 having a shape that tends to cause electric field concentration is formed covering each photoconductor layer 34, and an insulating layer 37 is formed around the electron emitting section 36 on the insulating layer 35.
An extraction electrode 38 is formed on 7. Since the configuration of this embodiment is a so-called field emission type, the electron emission section 36
is a high melting point, low work function material such as Mo, La
It is desirable to use B6, ZrC, etc.
本実施例においては、電源３９により引出し電極３８が
正、導電体層３２が負となるように所定の電圧を印加す
ることにより、上記第１の実施例と同様の原理で所望の
電子放出領域から電子を放出させることができる。In this embodiment, by applying a predetermined voltage from the power source 39 so that the extraction electrode 38 is positive and the conductive layer 32 is negative, a desired electron emission region is formed using the same principle as in the first embodiment. electrons can be emitted from
実施例１
第１図において、基板１としてガラスを用い、まず、こ
の基板１上にφ０．５ ｍｍ 、 ピ、、 ｆ−２ｍ
ｍで１０ Ｘ １０個の開孔部３を有する膜厚３０Ｑｎ
ｍのＡ１蒸着膜からなる第１の導電体層２を形成した。Example 1 In FIG. 1, glass is used as the substrate 1, and first, a diameter of 0.5 mm, φ, f-2m is placed on the substrate 1.
Film thickness 30Qn with 10×10 openings 3 in m
A first conductor layer 2 consisting of an A1 vapor-deposited film of m thickness was formed.
次にφ０．５ ｍｍの開孔部３にφ０．６ ｍｍで膜厚
５ＱＱｎｍの光導電体層４、例えば、ＣｄＳｅ、 Ｃｄ
Ｓ、 ＺｎＳ 等を形成した。次に、第１の導電体層２
上で光導電体層４の周囲に絶縁体層６として、例えば、
Ｓ ｉ０２、ＡＩ ２０３ 等を形成した後、光導電
体層４上にこれと接触してφＱ、 ｇ ｍｍの第３の導
電体層５として、例えば、ＡＩ、 Ｍｏ、 ＬａＢ６、
ＺｒＣ等を形成した。Next, a photoconductor layer 4 having a diameter of 0.6 mm and a film thickness of 5QQnm, such as CdSe, Cd
S, ZnS, etc. were formed. Next, the first conductor layer 2
As an insulator layer 6 around the photoconductor layer 4 on the top, for example,
After forming Si02, AI203, etc., a third conductive layer 5 of φQ, g mm is formed on the photoconductor layer 4 in contact with this, for example, AI, Mo, LaB6,
ZrC etc. were formed.
次に、絶縁体層６および第２の導電体層５上に薄い絶縁
体層７として、Ａｌ２Ｏ３、Ｓ ｉ０２、Ｓｉ３Ｎ４等
を約１０ｎｍの膜厚で形成した。次に、絶縁体層７上に
第３の導電体層８として、例えば、Ａｕ、ＺｒＣ１Ｌａ
Ｂ６等を１０〜１５ｎｍの膜厚で形成して電子放出素子
を作製した。そして、第３の導電体層８と第１の導電体
層３間に１０〜１５Ｖの電圧を印加しながら、ガラス基
板１側から所望の電子放出領域に対応する開孔部３にＨ
ｅ−Ｎｅレーザ光を照射した結果、クロストークによる
誤動作がなく、第３の導電体層８側において、Ｈｅ−Ｎ
ｅレーザ光を照射した開拓部３に対応する箇所のみから
電子を放出させることができた。Next, a thin insulator layer 7 of Al2O3, Si02, Si3N4, etc. was formed on the insulator layer 6 and the second conductor layer 5 to a thickness of about 10 nm. Next, a third conductor layer 8 is formed on the insulator layer 7 by using, for example, Au, ZrC1La, etc.
An electron-emitting device was fabricated by forming B6 or the like to a thickness of 10 to 15 nm. Then, while applying a voltage of 10 to 15 V between the third conductor layer 8 and the first conductor layer 3, H is applied from the glass substrate 1 side to the opening 3 corresponding to the desired electron emission region.
As a result of irradiating the e-Ne laser beam, there was no malfunction due to crosstalk, and He-N
Electrons were able to be emitted only from the location corresponding to the reclamation area 3 irradiated with the e-laser light.
実施例２
第２図において、まず、ガラス基板１５上にφＱ、 ５
ｍｍの開孔部１７を有するように遮光体層１６として
、例えば、Ｏｅ、 Ｓｉ等を形成した。次に、遮光体層
１６およびガラス基板１５上にＩＴＯ。Example 2 In FIG. 2, first, φQ, 5
The light shielding layer 16 was formed of, for example, Oe, Si, etc. so as to have an opening 17 of mm. Next, ITO is deposited on the light shielding layer 16 and the glass substrate 15.
５ｎ０２等の透明な第１の導電体層１８ を形成した後
、上記実施例１と同様にして電子放出素子を作製した。After forming a transparent first conductor layer 18 such as 5n02, an electron-emitting device was produced in the same manner as in Example 1 above.
そして、実施例１（！：同様に第３の導電体層２３と透
明な第１の導電体層１８に電圧を印加しながらガラス基
板１５側から各電子放出領域ごとに光照射を行った結果
、クロストークによる誤動作がなく、所望の電子放出領
域のみから電子を放出させることができた。Example 1 (!: Similarly, the results were obtained by irradiating each electron emission region with light from the glass substrate 15 side while applying a voltage to the third conductor layer 23 and the transparent first conductor layer 18. There was no malfunction due to crosstalk, and electrons could be emitted only from the desired electron emission region.
実施例３
第３図において、まず、上記実施例１の場合と同様にガ
ラス基板３１上に順次ＡＩ蒸着膜からなる第１の導電体
層３２ 、ＣｄＳｅ、 ＣｄＳ、 ＺｎＳ 等からなる
光導電体層３４．５Ｉ０２からなる絶縁体層３２ を形
成した。次に、絶縁体層３５上に電子放出素子囲の絶縁
体層３７として、５ｉ０２をフォトプロセスにより約１
μｍ の厚さで形成し、その上に引出し電極３８として
、Ｍｏを３００１ｍの厚さで形成した。その後、斜め蒸
着と垂直蒸着のに二元蒸着法により、光導電体層３４を
覆ってＭｏ 、 ＬａＢ６等からなる電子放出部３６
を形成した。そして、引出し電極３８と導電体層３２と
に所定の電圧を印加しながらガラス基板３１側より所望
の電子放出領域に対応する開孔部３３に光照射を行った
結果、所望の電子放出領域のみから電子を放出させるこ
とができた。Example 3 In FIG. 3, first, as in the case of Example 1, a first conductor layer 32 made of an AI vapor-deposited film and a photoconductor layer made of CdSe, CdS, ZnS, etc. are sequentially deposited on a glass substrate 31. An insulator layer 32 made of 34.5I02 was formed. Next, 5i02 was formed on the insulator layer 35 by photoprocessing to form an insulator layer 37 surrounding the electron-emitting device.
The lead electrode 38 was formed using Mo to a thickness of 3001 m. Thereafter, the photoconductor layer 34 is covered with an electron-emitting region 36 made of Mo, LaB6, etc., using a binary evaporation method using oblique evaporation and vertical evaporation.
was formed. Then, while applying a predetermined voltage to the extraction electrode 38 and the conductive layer 32, light is irradiated from the glass substrate 31 side to the aperture 33 corresponding to the desired electron emitting region, and as a result, only the desired electron emitting region is exposed. It was possible to emit electrons from
発明の効果
以上述べたように本発明によれば、所定の光を透過する
ことができる複数の開孔部に光導電体層を設け、光導電
体層の一側を導電体層に接触させ、光導電体層の他側を
この光導電体層に対応する独立した導電体層、若しくは
電子放出部に接触させ、所望の電子放出領域に対応する
開孔部に光照射を行うことにより、当該電子放出領域に
おける光導電体層を電気的絶縁状態から電気的導通状態
にし、導電体層と当該電子放出領域の導電体層、若しく
は電子放出部を電気的に接続し、当該電子放出領域のみ
から電子を放出させるようにしている。したがって、駆
動用の配線を簡素化することがでと、また、クロストー
クをなくして隣接電子放出領域の誤動作を防止すること
ができる。Effects of the Invention As described above, according to the present invention, a photoconductor layer is provided in a plurality of apertures through which predetermined light can pass, and one side of the photoconductor layer is brought into contact with the conductor layer. , by bringing the other side of the photoconductor layer into contact with an independent conductor layer corresponding to this photoconductor layer or an electron-emitting region, and irradiating light into the aperture corresponding to the desired electron-emitting region, The photoconductor layer in the electron emitting region is changed from an electrically insulating state to an electrically conductive state, and the conductor layer and the conductor layer in the electron emitting region or the electron emitting part are electrically connected, and only the electron emitting region is removed. It causes electrons to be emitted from the Therefore, it is possible to simplify the driving wiring, eliminate crosstalk, and prevent malfunction of adjacent electron emitting regions.
第１図は本発明の第１の実施例における電子放出素子を
示す断面図、第２図は本発明の第２の実施例における電
子放出素子を示す断面図、第３図は本発明の第３の実施
例における電子放出素子を示す断面図、第４図は従来の
電子放出素子の一例を示す断面図、第５図は従来の電子
放出素子の他の例を示す斜視図、第６図は従来の電子放
出素子の他の例を示す斜視図、第７図は従来の電子放出
素子の更に他の例を示す断面図である。
１・・・基板、２・・・第１の導電体層、３・・・開孔
部、４・・光導電体層、５ 第２の導電体層、６・・・
絶縁体層、７・・・絶縁体層、８・・・第３の導電体層
、９・・・絶縁体層、１０・・・引出し電極、１５
・基板、１６・・・遮光体層、１７・・・開孔部、１８
・・・透明な第１の導電体層、１９・・・光導電体層、
２０・・第２の導電体層、２１・・・絶縁体層、２２・
・絶縁体層、２３ ・・第３の導電体層、２４・・・絶
縁体層、２５・・・引出し電極、３１・・・基板、３２
・・・導電体層、３３・・・開孔部、３４・・・光導電
体層、３５・・・絶縁体層、３６・・・電子放出部、３
７・・・絶縁体層、３８・・・引出し電極。FIG. 1 is a sectional view showing an electron-emitting device according to a first embodiment of the invention, FIG. 2 is a sectional view showing an electron-emitting device according to a second embodiment of the invention, and FIG. 3 is a sectional view showing an electron-emitting device according to a second embodiment of the invention. 4 is a cross-sectional view showing an example of a conventional electron-emitting device, FIG. 5 is a perspective view showing another example of the conventional electron-emitting device, and FIG. 7 is a perspective view showing another example of the conventional electron-emitting device, and FIG. 7 is a sectional view showing still another example of the conventional electron-emitting device. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First conductor layer, 3... Opening part, 4... Photoconductor layer, 5... Second conductor layer, 6...
Insulator layer, 7... Insulator layer, 8... Third conductor layer, 9... Insulator layer, 10... Extraction electrode, 15
- Substrate, 16... Light shielding layer, 17... Opening part, 18
...transparent first conductor layer, 19...photoconductor layer,
20... Second conductor layer, 21... Insulator layer, 22...
- Insulator layer, 23... Third conductor layer, 24... Insulator layer, 25... Leading electrode, 31... Substrate, 32
... Conductor layer, 33... Opening part, 34... Photoconductor layer, 35... Insulator layer, 36... Electron emission part, 3
7... Insulator layer, 38... Extraction electrode.
Claims (3)
板上に形成され、所定の光に対して不透明で、複数の開
孔部を有する第１の導電体層と、上記各開孔部に上記第
１の導電体層と接触して形成された光導電体層と、この
光導電体層と接触して形成された第２の導電体層と、上
記光導電体層と上記第２の導電体層の周囲に形成された
絶縁体層と、上記第２の導電体層上に形成され、電子を
透過させるための絶縁体層と、この絶縁体層上に形成さ
れ、電子を放出させるための第３の導電体層とを備えた
電子放出素子。(1) A substrate that is transparent to predetermined light, a first conductor layer formed on this substrate that is opaque to predetermined light, and has a plurality of openings, and each of the openings. a photoconductor layer formed in the hole in contact with the first conductor layer; a second conductor layer formed in contact with the photoconductor layer; an insulator layer formed around the second conductor layer; an insulator layer formed on the second conductor layer to transmit electrons; and an insulator layer formed on the insulator layer to transmit electrons. An electron-emitting device comprising: a third conductor layer for emitting .
板上に形成された透明な第１の導電体層と、この透明な
第１の導電体層の上側と下側の少なくとも一方に形成さ
れ、所定の光に対して不透明で、複数の開孔部を有する
遮光体層と、上記透明な第１の導電体層と接触し、上記
遮光体層の各開孔部に対応して形成された光導電体層と
、この光導電体層と接触して形成された第２の導電体層
と、上記光導電体層と上記第２の導電体層の周囲に形成
された絶縁体層と、上記第２の導電体層上に形成され、
電子を透過させるための絶縁体層と、この絶縁体層上に
形成され、電子を放出させるための第３の導電体層とを
備えた電子放出素子。(2) A substrate that is transparent to a predetermined light, a transparent first conductor layer formed on this substrate, and at least one of the upper side and the lower side of this transparent first conductor layer. a light-shielding layer formed on a substrate, opaque to a predetermined light, and having a plurality of apertures; and a light-shielding layer that is in contact with the transparent first conductive layer and corresponds to each aperture of the light-shielding layer. a second conductor layer formed in contact with the photoconductor layer; and an insulation formed around the photoconductor layer and the second conductor layer. a conductor layer, and a conductor layer formed on the second conductor layer;
An electron-emitting device comprising an insulator layer for transmitting electrons and a third conductor layer formed on the insulator layer for emitting electrons.
板上に形成され、所定の光に対して不透明で、複数の開
孔部を有する導電体層と、上記各開孔部に上記導電体層
と接触して形成された光導電体層と、この光導電体層の
周囲に形成された絶縁体層と、上記光導電体層上に形成
された電子放出部と、この電子放出部の周囲に形成され
た絶縁体層と、この絶縁体層上に形成された引出し電極
とを備えた電子放出素子。(3) a substrate that is transparent to a predetermined light; a conductive layer formed on the substrate that is opaque to the predetermined light and has a plurality of apertures; a photoconductor layer formed in contact with the conductor layer; an insulator layer formed around the photoconductor layer; an electron emitting region formed on the photoconductor layer; An electron-emitting device comprising an insulator layer formed around an emission part and an extraction electrode formed on the insulator layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4301290A JP2956107B2 (en) | 1990-02-23 | 1990-02-23 | Electron-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4301290A JP2956107B2 (en) | 1990-02-23 | 1990-02-23 | Electron-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03246851A true JPH03246851A (en) | 1991-11-05 |
| JP2956107B2 JP2956107B2 (en) | 1999-10-04 |
Family
ID=12652074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4301290A Expired - Fee Related JP2956107B2 (en) | 1990-02-23 | 1990-02-23 | Electron-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2956107B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6900066B2 (en) | 2002-03-27 | 2005-05-31 | Sony Corporation | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
| JP2005149865A (en) * | 2003-11-14 | 2005-06-09 | Nippon Hoso Kyokai <Nhk> | Field emission device, field emission substrate, drive device, and display |
| JP2007333887A (en) * | 2006-06-13 | 2007-12-27 | Nippon Hoso Kyokai <Nhk> | Matrix type display driving device, field emission display using the same, and plasma display panel |
| DE102014107697A1 (en) | 2013-09-24 | 2015-03-26 | Smc Corporation | Ultrasonic Flow Meter |
-
1990
- 1990-02-23 JP JP4301290A patent/JP2956107B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6900066B2 (en) | 2002-03-27 | 2005-05-31 | Sony Corporation | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
| US7118927B2 (en) | 2002-03-27 | 2006-10-10 | Sony Corporation | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
| US7166482B2 (en) | 2002-03-27 | 2007-01-23 | Sony Corporation | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
| US7169628B2 (en) | 2002-03-27 | 2007-01-30 | Sony Corporation | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
| US7195943B2 (en) | 2002-03-27 | 2007-03-27 | Sony Corporation | Cold cathode field emission device and process for the production thereof, and cold cathode field emission display and process for the production thereof |
| CN1324629C (en) * | 2002-03-27 | 2007-07-04 | 索尼公司 | Cold-cathod field emitting element, cold-cathod field emitting display device and mfg. method for both of them |
| JP2005149865A (en) * | 2003-11-14 | 2005-06-09 | Nippon Hoso Kyokai <Nhk> | Field emission device, field emission substrate, drive device, and display |
| JP2007333887A (en) * | 2006-06-13 | 2007-12-27 | Nippon Hoso Kyokai <Nhk> | Matrix type display driving device, field emission display using the same, and plasma display panel |
| DE102014107697A1 (en) | 2013-09-24 | 2015-03-26 | Smc Corporation | Ultrasonic Flow Meter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2956107B2 (en) | 1999-10-04 |
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