JPH03245488A - Manufacture of membranous electroluminescence element - Google Patents
Manufacture of membranous electroluminescence elementInfo
- Publication number
- JPH03245488A JPH03245488A JP2040565A JP4056590A JPH03245488A JP H03245488 A JPH03245488 A JP H03245488A JP 2040565 A JP2040565 A JP 2040565A JP 4056590 A JP4056590 A JP 4056590A JP H03245488 A JPH03245488 A JP H03245488A
- Authority
- JP
- Japan
- Prior art keywords
- luminescent
- thin film
- base material
- vapor deposition
- chemical vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005401 electroluminescence Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 9
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 5
- 239000001257 hydrogen Substances 0.000 claims abstract description 5
- 239000012159 carrier gas Substances 0.000 claims abstract description 4
- 150000004678 hydrides Chemical class 0.000 claims abstract description 4
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 6
- 239000012071 phase Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 238000003786 synthesis reaction Methods 0.000 abstract description 7
- 238000000746 purification Methods 0.000 abstract description 2
- 239000007790 solid phase Substances 0.000 abstract description 2
- 239000007792 gaseous phase Substances 0.000 abstract 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 11
- 239000005083 Zinc sulfide Substances 0.000 description 10
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 9
- 239000011572 manganese Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 229910052748 manganese Inorganic materials 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910001385 heavy metal Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910001424 calcium ion Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- VIDTVPHHDGRGAF-UHFFFAOYSA-N selenium sulfide Chemical compound [Se]=S VIDTVPHHDGRGAF-UHFFFAOYSA-N 0.000 description 1
- 229960005265 selenium sulfide Drugs 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、発光中心を添加した発光頚域を有する薄膜エ
レクトロルミネセンス素子の製造方法に関し、特に、発
光輝度向上のだめの発光頚域の形成技術に関するもので
ある。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for manufacturing a thin film electroluminescent device having a luminescent neck region doped with a luminescent center, and in particular, to a method for producing a thin film electroluminescent device having a luminescent neck region doped with a luminescent center, and in particular to a method for forming a luminescent neck region for improving luminance brightness. It's about technology.
薄膜エレクトロルミネセンス素子には、例えば、硫化亜
鉛（ＺｎＳ）を発光母材として発光中心となるマンガン
（Ｍｎ）などの遷移金属や希土類を添加した発光層が形
成されており、この発光層に交流電界を印加することに
より、発光現象を生じさせることができる。ここで、素
子の絶縁耐圧の向上、素子の長寿命化を図るために、発
光層の両側を酸化イツトリウム（ＹＺ ０３ ）や窒化
シリコン（Ｓｉ３Ｎ４）などの絶縁層を設けた２重絶縁
型の構造も提案されている。In a thin film electroluminescent element, for example, a luminescent layer is formed using zinc sulfide (ZnS) as a luminescent base material and a transition metal such as manganese (Mn) or a rare earth element, which is the luminescent center, is added to the luminescent layer. By applying an electric field, a light-emitting phenomenon can be caused. Here, in order to improve the dielectric strength of the device and extend the life of the device, a double insulation type structure is used in which an insulating layer such as yttrium oxide (YZ 03 ) or silicon nitride (Si3N4) is provided on both sides of the light emitting layer. has also been proposed.
従来、発光層を形成する場合には、硫酸亜鉛、塩化亜鉛
などの亜鉛塩溶液に硫化水素を反応させて硫化亜鉛を沈
澱させ、この沈澱物を洗浄、乾燥することによって発光
母材を作成し、この発光母材を原料として、電子ビーム
蒸着法等により発光層を薄膜成長させるようにしている
。Conventionally, when forming a luminescent layer, a luminescent base material was created by reacting hydrogen sulfide with a zinc salt solution such as zinc sulfate or zinc chloride to precipitate zinc sulfide, and washing and drying this precipitate. Using this luminescent base material as a raw material, a luminescent layer is grown into a thin film by an electron beam evaporation method or the like.
（発明が解決しようとする課題〕
上記の発光層の形成方法においては、製造された硫化亜
鉛からなる発光母材は、銅、二、ゲルなどの重金属や、
カルシウムイオン、塩化物イオンなどの不純物イオンを
大量に含有しており１、その発光母材を原料とする発光
層中にも不純物が混入するため、発光輝度の不安定及び
低下、素子寿命の短縮などをもたらしていた。(Problems to be Solved by the Invention) In the method for forming a luminescent layer described above, the produced luminescent base material made of zinc sulfide contains heavy metals such as copper, dichloromethane, gel, etc.
Contains a large amount of impurity ions such as calcium ions and chloride ions1, and impurities also get mixed into the light-emitting layer made from the light-emitting base material, resulting in unstable and reduced luminance and shortened device life. etc. were brought about.
そこで、本発明はこの問題点を解決するものであり、そ
の課題は、気相反応で発光母材を合成することにより、
不純物の混入が少ない発光層を形成し、薄膜エレクトロ
ルミネッセンス素子の発光輝度の向上及び安定化、素子
の長寿命化を達成する製造方法を確立することにある。Therefore, the present invention aims to solve this problem, and its objective is to synthesize a luminescent base material through a gas phase reaction.
The object of the present invention is to establish a manufacturing method that forms a light-emitting layer with less contamination of impurities, improves and stabilizes the luminance of a thin-film electroluminescent device, and extends the life of the device.
［課題を解決するための手段］
上記の問題点を解決するために、発光母材中に発光中心
材を添加して形成される発光頚域を備えた薄膜エレクト
ロルミネセンス素子の製造方法において、本発明が講じ
た手段は、
その発光頚域の形成時における原料となる発光母材とし
て、化学的気相成長法により合成した化合物を用いるも
のである。[Means for Solving the Problems] In order to solve the above problems, in a method for manufacturing a thin film electroluminescent device having a luminescent neck region formed by adding a luminescent center material to a luminescent base material, The measure taken by the present invention is to use a compound synthesized by chemical vapor deposition as a luminescent base material that is a raw material for forming the luminescent neck region.
この場合に、化学的気相成長法としては、水素をキャリ
アガスとし、単体原料を気相で高温合成する方法を用い
る場合があり、また、水素化物を原料として用いる場合
もある。In this case, as a chemical vapor deposition method, a method of synthesizing a single raw material at high temperature in a gas phase using hydrogen as a carrier gas may be used, or a hydride may be used as a raw material.
上記の手段によれば、発光頚域形成時の原料となる発光
母材が化学的気相成長法により製造されるが、この化学
的気相成長法に用いる単体原料としては高純度精製物が
容易に入手でき、また、これらの単体原料が気相−固相
間の状態変化、及び合成時の化学反応を経由することに
よる純化作用により、合成後の化合物の不純物濃度が低
下する。According to the above method, the luminescent base material, which is the raw material for forming the luminescent neck region, is produced by chemical vapor deposition, but the single raw material used in this chemical vapor deposition method is a highly purified product. They are easily available, and the impurity concentration of the compound after synthesis is reduced due to the purification effect of these simple raw materials through state changes between gas phase and solid phase and chemical reactions during synthesis.
したがって、従来の方法よりも高純度の発光母材を作成
することが可能となる。Therefore, it is possible to create a luminescent base material with higher purity than with conventional methods.
また、キャリアガスとして水素を用いて発光母材の単体
原料を高温合成する場合又は単体原料と水素化物を原料
として高温合成する場合には、ハロゲン輸送法を用いる
場合に発生する塩化物イオン等の混入を避けることがで
きる。In addition, when performing high-temperature synthesis of a single raw material for a luminescent base material using hydrogen as a carrier gas, or when performing high-temperature synthesis using a single raw material and a hydride as raw materials, chloride ions, etc. generated when using the halogen transport method, etc. Contamination can be avoided.
このように、高純度の発光母材を製造することができる
ので、この発光母材から形成される発光頚域の不純物量
が削減される。したがって、不純物に基づく発光特性の
劣化が生じないため、発光輝度の安定化、素子の長寿命
化が達成できると共に、発光中心における発光効率の向
上により薄膜エレクトロルミネセンス素子の発光輝度を
高くすることができる。In this way, since a highly pure luminescent base material can be manufactured, the amount of impurities in the luminescent neck region formed from this luminescent base material is reduced. Therefore, since there is no deterioration of the luminescence characteristics due to impurities, it is possible to stabilize the luminescence brightness and extend the life of the device, and also to increase the luminance of the thin film electroluminescent device by improving the luminous efficiency at the luminescence center. I can do it.
［実施例］ 次に、本発明の実施例を添付図面に基づいて説明する。[Example] Next, embodiments of the present invention will be described based on the accompanying drawings.
〈実施例１〉 先ず、発光母材の作成方法について説明する。<Example 1> First, a method for producing a luminescent base material will be explained.
発光母材の合成炉は、原料供給部、混合反応部及び結晶
成長部とを有し、原料供給部に高純度の金属亜鉛と硫黄
を配置し、加熱して気相とし、高純度水素のガス流によ
り混合反応部へ輸送する。混合反応部で混合された亜鉛
と硫黄は、混合反応部よりも低温に設定された結晶成長
部において硫化亜鉛となって堆積する。ここに、混合反
応部は９５０°Ｃ１結晶成長部は７５０°Ｃに設定され
る。この方法は、応用物理ｖｏ１．４９ 、 ｎｏ、１
． Ｐ、４３（１９８０）に記載されている。The luminescent base material synthesis furnace has a raw material supply section, a mixing reaction section, and a crystal growth section.High purity metal zinc and sulfur are placed in the raw material supply section, heated to form a gas phase, and produced with high purity hydrogen. Transported to the mixing reaction section by gas flow. Zinc and sulfur mixed in the mixing reaction section become zinc sulfide and deposit in the crystal growth section, which is set at a lower temperature than the mixing reaction section. Here, the mixing reaction section is set at 950°C, and the crystal growth section is set at 750°C. This method is applied in Applied Physics vol. 1.49, no. 1
．． P, 43 (1980).
硫化亜鉛を発光母材とする場合、亜鉛、硫黄ともに蒸気
圧が充分高いことからハロゲン輸送法を用いる必要がな
（、水素のみをキャリアガスとして用いても充分な成長
量が確保できるので、簡易な構成の合成炉で足りる。ま
た、ハロゲン輸送法を用いないことから、この気相成長
法においては塩化物イオン等、ハロゲンの混入のおそれ
がないという利点もある。また、単体の亜鉛、硫黄とし
ては充分高純度の出発材料が入手でき、重金属や活性イ
オン等の不純物の含有量を低減できる。When zinc sulfide is used as the luminescent base material, there is no need to use the halogen transport method because the vapor pressure of both zinc and sulfur is sufficiently high. A synthesis furnace with a similar configuration is sufficient.Also, since the halogen transport method is not used, this vapor phase growth method has the advantage that there is no risk of contamination with halogens such as chloride ions. As a result, starting materials of sufficiently high purity can be obtained, and the content of impurities such as heavy metals and active ions can be reduced.
上記の方法により作成した硫化亜鉛を用いて薄膜エレク
トロルミネセンス素子を製造する。第１図には、この薄
膜エレクトロルミネセンス素子の構造を示す。透明なガ
ラス基板１上に、膜厚２０００人のＩＴＯからなる透明
電極２をスパッタリング法にて被着し、この上に、膜厚
４０００人の酸化イツトリウムからなる第１絶縁層３を
スパッタリング法により形成する。次に、前述の気相成
長法により作成した硫化亜鉛を粉砕し、これにマンガン
を０．５ｗＬ％となるように混合して蒸着材料とする。A thin film electroluminescent device is manufactured using zinc sulfide prepared by the above method. FIG. 1 shows the structure of this thin film electroluminescent device. A transparent electrode 2 made of ITO with a thickness of 2,000 thick is deposited on a transparent glass substrate 1 by a sputtering method, and a first insulating layer 3 made of yttrium oxide with a thickness of 4,000 thick is deposited on top of this by a sputtering method. Form. Next, the zinc sulfide produced by the above-mentioned vapor phase growth method is pulverized, and manganese is mixed therein to give a vapor deposition material of 0.5 wL%.
この蒸着材料を電子ビーム蒸着法により真空中で第１絶
縁層３上に蒸着し、膜厚５０００人の発光層４を形成す
る。この後、膜厚４０００人の酸化イツトリウムからな
る第２絶縁層５と、膜厚５０００人のＡｉ、からなる背
面電極６を順次、スパッタリング法により形成する。This vapor deposition material is vapor deposited on the first insulating layer 3 in a vacuum by electron beam vapor deposition to form a light emitting layer 4 having a thickness of 5000 nm. Thereafter, a second insulating layer 5 made of yttrium oxide with a thickness of 4,000 yen and a back electrode 6 made of Ai with a thickness of 5,000 yen are sequentially formed by sputtering.
このようにして形成した薄膜エレクトロルミぶセンス素
子の発光特性を第２図に示す。従来製法の発光母材を用
いて形成した素子の発光輝度（曲線Ａ）と較べると、本
実施例に係る素子の発光輝度（曲線Ｂ）は２倍以上とな
っている。これは、不純物の減少によって発光層の発光
効率が向上したことを示すものである。また、不純物濃
度の低下により、発光層自体の構造も安定化し、劣化が
生じにくくなるので、素子の長寿命化を図ることができ
る。The light emitting characteristics of the thin film electroluminescent element thus formed are shown in FIG. Compared to the luminance (curve A) of an element formed using a conventional luminescent base material, the luminance (curve B) of the element according to this example is more than twice as high. This indicates that the light emitting efficiency of the light emitting layer was improved due to the reduction of impurities. Furthermore, the structure of the light-emitting layer itself is stabilized due to the reduction in impurity concentration, and deterioration becomes less likely to occur, so that the life of the device can be extended.
〈実施例２〉
実施例１と同様の方法で作成した発光母材たる硫化亜鉛
をターゲットとし、一方、発光中心材としてはマンガン
（Ｍｎ）のターゲットを用い、２元スパッタリング法に
より膜厚５０００人の発光層４を形成する。発光層中の
マンガンの濃度は、硫化亜鉛のターゲット及びマンガン
のターゲットに対する供給電力を調整するこ七により、
０． ５ｗｔ％となるようにしている。<Example 2> Zinc sulfide as a luminescent base material prepared in the same manner as in Example 1 was used as a target, while a manganese (Mn) target was used as a luminescent center material, and a film thickness of 5,000 yen was formed by a binary sputtering method. A light emitting layer 4 is formed. The concentration of manganese in the luminescent layer can be adjusted by adjusting the power supplied to the zinc sulfide target and the manganese target.
0. The content is set to 5wt%.
上記の方法で発光層４を形成した薄膜エレクトロルミネ
センス素子の発光特性を第３図に示す。FIG. 3 shows the light emitting characteristics of the thin film electroluminescent device in which the light emitting layer 4 was formed by the above method.
ここで、発光層４以外の各層及び電極は、実施例１と同
一製法にて形成している。本実施例の場合（曲線Ｄ）に
は、従来製法で作成した発光母材を用い、上記２元スパ
ッタリング法で発光層４を形成した場合（曲線Ｃ）の３
倍程度の高い発光輝度が得られている。Here, each layer other than the light emitting layer 4 and the electrodes are formed by the same manufacturing method as in Example 1. In the case of this example (curve D), the luminescent base material prepared by the conventional method is used, and the luminescent layer 4 is formed by the above-mentioned binary sputtering method (curve C).
Emission brightness approximately twice as high is obtained.
本発明に係る発光母材の気相成長法としては、金属亜鉛
と硫化水素を用いて高温合成する方法も可能である。ま
た、発光母材として硫化セレン（ＺｎＳｅ）を選択する
場合には、金属亜鉛とＨ２Ｓｅを原料として合成できる
。As the vapor phase growth method for the luminescent base material according to the present invention, a high temperature synthesis method using metal zinc and hydrogen sulfide is also possible. Furthermore, when selenium sulfide (ZnSe) is selected as the luminescent base material, it can be synthesized using metallic zinc and H2Se as raw materials.
また、発光母材から発光層を形成する手段としては、上
記の電子ビーム蒸着法、スパッタリング法の他に、イオ
ンブレーティング法、抵抗加熱蒸着法、分子線エピタキ
シャル法などを用いることが可能である。In addition to the above-mentioned electron beam evaporation method and sputtering method, ion blating method, resistance heating evaporation method, molecular beam epitaxial method, etc. can be used as a means for forming a light emitting layer from a light emitting base material. .
〔発明の効果］
以上説明したように、本発明は、発光頚域の形成に用い
る発光母材を化学的気相成長法にて合成することに特徴
を有するので、発光頚域中の重金属、カルシウムイオン
、塩化物イオン等の不純物の含有量を低減することがで
き、薄膜エレクトロルミネセンス素子の発光輝度を高め
、発光特性の安定化を通じて素子の寿命を延ばすことが
可能である。[Effects of the Invention] As explained above, the present invention is characterized in that the luminescent base material used for forming the luminescent neck region is synthesized by chemical vapor deposition, so that the heavy metals in the luminescent neck region, It is possible to reduce the content of impurities such as calcium ions and chloride ions, increase the luminance of the thin-film electroluminescent device, and extend the life of the device by stabilizing the light-emitting characteristics.
第１図は本発明の実施例に係る薄膜エレクトロルミネセ
ンス素子の構造を示す縦断面図である。
第２図は本発明の実施例１に係る薄膜エレクトロルミネ
センス素子の発光輝度を素子印加電圧に対して示す発光
特性グラフ図である。
第３図は本発明の実施例２に係る薄膜エレクトロルミネ
センス素子の発光輝度を素子印加電圧に対して示す発光
特性グラフ図である。
〔符号の説明］
１・・・ガラス基板
２・・・透明電極
３・・・第１絶縁層
４・・・発光層
５・・・第２絶縁層
６・・・背面電極。FIG. 1 is a longitudinal sectional view showing the structure of a thin film electroluminescent device according to an embodiment of the present invention. FIG. 2 is a light emission characteristic graph showing the luminance of the thin film electroluminescent device according to Example 1 of the present invention versus the voltage applied to the device. FIG. 3 is a light emission characteristic graph showing the luminance of the thin film electroluminescent device according to Example 2 of the present invention versus the voltage applied to the device. [Explanation of symbols] 1...Glass substrate 2...Transparent electrode 3...First insulating layer 4...Light emitting layer 5...Second insulating layer 6...Back electrode.
Claims (3)
光領域を備えた薄膜エレクトロルミネセンス素子の製造
方法において、 前記発光頚域の原料たる前記発光母材として、化学的気
相成長法により合成した化合物を用いることを特徴とす
る薄膜エレクトロルミネセンス素子の製造方法。(1) In a method for manufacturing a thin film electroluminescent device having a luminescent region formed by adding a luminescent center material into a luminescent matrix, the luminescent matrix, which is a raw material for the luminescent neck region, contains a chemical vapor phase. A method for manufacturing a thin film electroluminescent device, characterized by using a compound synthesized by a growth method.
し、単体原料を用いて気相で前記化合物を高温合成する
方法であることを特徴とする請求項第１項に記載の薄膜
エレクトロルミネセンス素子の製造方法．(2) The chemical vapor deposition method is a method of synthesizing the compound at high temperature in a gas phase using hydrogen as a carrier gas and using a single raw material. Method for manufacturing luminescent elements.
を用いて気相で前記化合物を高温合成する方法であるこ
とを特徴とする請求項第１項に記載の薄膜エレクトロル
ミネセンス素子の製造方法。(3) The thin film electroluminescent device according to claim 1, wherein the chemical vapor deposition method is a method of synthesizing the compound at high temperature in a gas phase using a simple raw material and a hydride. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2040565A JPH03245488A (en) | 1990-02-21 | 1990-02-21 | Manufacture of membranous electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2040565A JPH03245488A (en) | 1990-02-21 | 1990-02-21 | Manufacture of membranous electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03245488A true JPH03245488A (en) | 1991-11-01 |
Family
ID=12583995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2040565A Pending JPH03245488A (en) | 1990-02-21 | 1990-02-21 | Manufacture of membranous electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03245488A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443999A (en) * | 1977-09-14 | 1979-04-06 | Yokohama Rubber Co Ltd:The | Puncture sealing composition |
| JPS61273894A (en) * | 1985-05-28 | 1986-12-04 | シャープ株式会社 | Thin film el element |
| JPS6235497A (en) * | 1985-08-07 | 1987-02-16 | アルプス電気株式会社 | Formation of electroluminescence thin film |
| JPS63136490A (en) * | 1986-11-27 | 1988-06-08 | シャープ株式会社 | Manufacture of thin film el device |
-
1990
- 1990-02-21 JP JP2040565A patent/JPH03245488A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5443999A (en) * | 1977-09-14 | 1979-04-06 | Yokohama Rubber Co Ltd:The | Puncture sealing composition |
| JPS61273894A (en) * | 1985-05-28 | 1986-12-04 | シャープ株式会社 | Thin film el element |
| JPS6235497A (en) * | 1985-08-07 | 1987-02-16 | アルプス電気株式会社 | Formation of electroluminescence thin film |
| JPS63136490A (en) * | 1986-11-27 | 1988-06-08 | シャープ株式会社 | Manufacture of thin film el device |
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