JPH03240289A - Manufacture of aluminum nitride substrate - Google Patents
Manufacture of aluminum nitride substrateInfo
- Publication number
- JPH03240289A JPH03240289A JP3610490A JP3610490A JPH03240289A JP H03240289 A JPH03240289 A JP H03240289A JP 3610490 A JP3610490 A JP 3610490A JP 3610490 A JP3610490 A JP 3610490A JP H03240289 A JPH03240289 A JP H03240289A
- Authority
- JP
- Japan
- Prior art keywords
- hole
- aluminum nitride
- melting point
- high melting
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 238000002844 melting Methods 0.000 claims abstract description 25
- 230000008018 melting Effects 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 9
- 229910052737 gold Inorganic materials 0.000 claims abstract description 7
- 238000010030 laminating Methods 0.000 claims abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 229910052726 zirconium Inorganic materials 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概 要〕
窒化アルミニウム基板に関し、
低抵抗のスルーホール基板を提供することを目的とし、
窒化アルミニウムのグリーンシートにスルーホールを穿
孔する工程と、該スルーホールの壁面に、窒化アルミニ
ウム粉末を含む高融点金属ベース）・を付着させ、しか
しスルーホールの孔の中心部には貫通孔を残す工程と、
該グリーンシートを積層し、焼成する工程と、該焼成し
た基板のスルーホール中に銅、金又はこれらの合金を充
填する工程により構成する。[Detailed Description of the Invention] [Summary] Regarding aluminum nitride substrates, the purpose of the present invention is to provide a low-resistance through-hole substrate. , a high melting point metal base containing aluminum nitride powder), but leaving a through hole in the center of the through hole;
It consists of a step of laminating the green sheets and firing them, and a step of filling copper, gold, or an alloy thereof into the through holes of the fired substrate.
本発明は窒化アルミニウム・スルーホール基板の製造方
法に関する。The present invention relates to a method of manufacturing aluminum nitride through-hole substrates.
窒化アルミニウムは大形で発熱量の大きな半導体チップ
を搭載する多層構造のパッケージや多層基板等に広く用
いられている。その理由は、■窒化アルミニウムの熱膨
張係数が（３，４〜３．９）Ｘ１０−’／ｌ’とアルミ
ナ（Ａ １２０．）の（６，６〜６．８）Ｘ１０−’／
ｌ’より小さく、シリコン（Ｓｉ）に近い、■熱伝導率
が１００〜１８０ Ｗ／ｍＫとアルミナと比べると８〜
１０倍程度高い、■その他、物理的・電気的特性に関し
てはアルミナと同レベルである、等の特徴からである。Aluminum nitride is widely used in multilayer packages and multilayer substrates on which large semiconductor chips that generate a large amount of heat are mounted. The reason is: ■ The thermal expansion coefficient of aluminum nitride is (3,4~3.9)X10-'/l' and that of alumina (A 120.) is (6,6~6.8)X10-'/l'.
Smaller than l', close to silicon (Si), ■Thermal conductivity is 100-180 W/mK, 8-8 compared to alumina.
This is because of its characteristics such as: 10 times higher than that of alumina, and other physical and electrical properties that are on the same level as alumina.
窒化アルミニウムのスルーホール部のメタライズ材料と
してはタングステン（Ｗ）、モリブデン（Ｍｏ）などの
高融点遷移金属が用いられている。High melting point transition metals such as tungsten (W) and molybdenum (Mo) are used as metallizing materials for the aluminum nitride through-hole portions.
例えば、タングステン粉末、バインダー及び溶剤、さら
に場合によっては若干量の窒化アルミニウム粉末を混ぜ
合せ、高粘度のペーストを作製し、そのペーストをグリ
ーンシート上に開孔したスルーホール部に充填し、それ
を何枚か重ね合せて積層し、焼結させてスルーホール基
板を形成している。For example, a high viscosity paste is created by mixing tungsten powder, a binder, a solvent, and in some cases a small amount of aluminum nitride powder, and the paste is filled into through-holes on a green sheet. Several sheets are stacked on top of each other and sintered to form a through-hole substrate.
従来法で作製した窒化アルミニウム・スルーホール基板
ではスルーホール部の導通抵抗が約４０〜４５〔ｍΩ〕
程度であるが、従来はこれで満足できるレベルであった
。しかしながら、最近、低抵抗のスルーホール基板への
要求が強くなり、この値では満足できない現状になって
きた。In the aluminum nitride through-hole substrate manufactured using the conventional method, the conduction resistance of the through-hole portion is approximately 40 to 45 [mΩ].
However, this was a satisfactory level in the past. However, recently there has been a strong demand for low-resistance through-hole substrates, and this value is no longer sufficient.
そこで、本発明はより低抵抗の窒化アルミニウム・スル
ーホール基板を製造することを目的とする。Therefore, an object of the present invention is to manufacture an aluminum nitride through-hole substrate with lower resistance.
本発明は、上記目的を実現するために、窒化アルミニウ
ムのグリーンシートにスルーホールを穿孔する工程と、
該スルーホールの壁面に、窒化アルミニウム粉末を含む
高融点金属ペーストを付着させ、しかしスルーホールの
孔の中心部には貫通孔を残す工程と、該グリーンシート
を積層し、焼成する工程と、該焼成した基板のスルーホ
ール中に銅、金又はこれらの合金を充填する工程とを有
することを特徴とする窒化アルミニウム基板の製造方法
を提供する。In order to achieve the above object, the present invention includes a step of drilling a through hole in an aluminum nitride green sheet;
A step of attaching a high melting point metal paste containing aluminum nitride powder to the wall surface of the through hole, but leaving a through hole in the center of the hole of the through hole, a step of laminating the green sheets and firing them, Provided is a method for manufacturing an aluminum nitride substrate, comprising the step of filling copper, gold, or an alloy thereof into through holes of a fired substrate.
窒化アルミニウムのグリーンシートのスルーホールの壁
面に、先ず、窒化アルミニウム粉末を若干含む高融点金
属ペーストを付着させてから、積層、焼成することによ
り、焼成した基板のスルーホールの貫通口が残り、かつ
壁面に高融点金属層が存在するので、容易に銅、金を充
填することができる。First, a high melting point metal paste containing a small amount of aluminum nitride powder is attached to the wall surface of the through hole in the aluminum nitride green sheet, and then laminated and fired, leaving a through hole in the fired board, and Since there is a high melting point metal layer on the wall surface, it can be easily filled with copper or gold.
図面を参照して説明する。 This will be explained with reference to the drawings.
先ず、窒化アルミニウムのグリーンシートｌを作製し、
スルーホール２を穿孔する。この工程は従来法と同様で
ある。例えば、粒径１μ程度の、ＩＮ粉末と有機バイン
ダー、溶剤からなるスラリーを流延してグリーンシート
（厚さ３００〜４０〇−）を形成し、これに孔径０．
１５ｍｍφのスルーホールをバンチする。First, a green sheet l of aluminum nitride was prepared,
Drill through hole 2. This process is similar to the conventional method. For example, a green sheet (300 to 400 mm thick) is formed by casting a slurry of IN powder, an organic binder, and a solvent with a particle size of about 1 μm, and a green sheet (300 to 400 mm thick) is formed on this green sheet.
Bunch through holes with a diameter of 15 mm.
次に、窒化アルミニウム粉末が若干量台まれる高融点金
属ベース）・であって低粘度のペーストを、スルーホー
ル２に充填する。低粘度のペーストであることにより、
高融点金属ペーストはスルーホール２の壁面に薄く付着
するのみで、スルーホールの中心部は貫通孔として残る
。窒化アルミニウムは、焼成時に、高融点金属を窒化ア
ルミニウム１に対して良好に付着させるために含めるが
、その量は若干量、通常高融点金属１００部に対して２
部以下、例えばＱ、５ｗｔ％程度でよい。高融点金属は
タングステンのほか、モリブデン、チタン、タンタル、
ジルコニウム等のいずれでもよい。ペーストの粘度はス
ルーホールの壁面に付着させる高融点金属ペーストの厚
みを規定するもので、バインダーや溶剤の量により調整
する。スルーホールの壁面に付着させる高融点食＠３の
厚みは薄いほどよいが、゛通常、乾燥後８０〜１０〇−
程度の厚みに形成すればよい。また、ペーストに含まれ
る高融点金属、窒化アルミニウムの平均粒径は小さい方
がよく、例えば１Ｊｔｍ以下、より好ましくは０．５ａ
以下とする。Next, the through hole 2 is filled with a low viscosity paste made of a high melting point metal base containing a small amount of aluminum nitride powder. By being a low viscosity paste,
The high melting point metal paste only adheres thinly to the wall surface of the through hole 2, and the center of the through hole remains as a through hole. Aluminum nitride is included to ensure good adhesion of the high melting point metal to 1 part aluminum nitride during firing, but the amount is a little, usually 2 parts per 100 parts of the high melting point metal.
% or less, for example, Q, about 5 wt%. In addition to tungsten, high-melting point metals include molybdenum, titanium, tantalum,
Any material such as zirconium may be used. The viscosity of the paste determines the thickness of the high melting point metal paste to be adhered to the wall of the through hole, and is adjusted by the amount of binder and solvent. The thinner the thickness of the high melting point corrosion agent @3 attached to the wall of the through hole, the better;
It may be formed to a certain thickness. In addition, the average particle size of the high melting point metal and aluminum nitride contained in the paste is preferably small, for example, 1 Jtm or less, more preferably 0.5 a
The following shall apply.
高融点金属ペーストの充填は、ペーストの粘度が低いこ
とを除いて、常法により行なうことができ、スルーホー
ルに合わせて開口を設けたメタルマスクを用いればよい
。このマスクの開口の大きさをスルーホールの径（例、
０．１５ｍｍφ）より大きくし、グリーンシートのスル
ーホール端に高融点金属のパッド（例、径０．５ ｍｍ
φ）を設けることが望ましい。Filling with the high melting point metal paste can be carried out by a conventional method, except that the viscosity of the paste is low, and a metal mask with openings corresponding to the through holes may be used. The size of the opening in this mask is determined by the diameter of the through hole (e.g.
0.15 mmφ), and place a refractory metal pad (e.g., 0.5 mm diameter) at the end of the through hole of the green sheet.
It is desirable to provide φ).
高融点金属ペーストを充填し終えたグリーンシートは必
要枚数だけ積層し、常法により焼成する。The required number of green sheets filled with the high melting point metal paste are stacked and fired by a conventional method.
例えば、３００〜４００ａ庫のグリーンシートを８枚程
度積層し、窒素雰囲気中１８００℃前後の温度で焼成す
る。この焼成後、第２図に見られるように、多層シート
１のスルーホール２は、壁面に高融点金属３が付着し、
中心部は貫通孔（例、０．１ ＋ｎｍφのスルーホール
に対し０．０７〜０．０８ｍｍφ空孔）として残る。こ
れは高融点金属ペーストを充填しておいたからで、これ
がなければスルーホールは積層時、又は焼成時に消失す
る。For example, about eight green sheets of 300 to 400 a size are stacked and fired at a temperature of about 1800° C. in a nitrogen atmosphere. After this firing, as shown in FIG. 2, the high melting point metal 3 adheres to the wall surface of the through hole 2 of the multilayer sheet 1.
The center portion remains as a through hole (for example, a 0.07 to 0.08 mmφ hole for a 0.1 + nmφ through hole). This is because the high melting point metal paste was filled, and without it the through holes would disappear during lamination or firing.
最後に、上記の焼成して得られた基板をアルミナ基台上
に置き、前に形成した高融点金属パッド上に銅片を載せ
、炉中で１０００℃〜１１００℃に加熱することにより
、銅は溶融し、高融点金属を介してスルーホールの空孔
中及び高融点金属層内部へ含浸又は拡散する。こうして
、第３図の如く、窒化アルミニウム基板１′のスルーホ
ールの壁面に高融点金属３、その中に銅４が含浸された
スルーホール基板が得られる。銅片の大きさはスルーホ
ールの形状、寸法に応じて決定する。Finally, the substrate obtained by the above firing is placed on an alumina base, a copper piece is placed on the previously formed high melting point metal pad, and the copper is heated to 1000°C to 1100°C in a furnace. is melted and impregnated or diffused into the pores of the through holes and into the high melting point metal layer via the high melting point metal. In this way, as shown in FIG. 3, a through-hole substrate is obtained in which the walls of the through-holes of the aluminum nitride substrate 1' are impregnated with the refractory metal 3, and the copper 4 is impregnated therein. The size of the copper piece is determined according to the shape and dimensions of the through hole.
その後、常法により、基板の表面に配線を行なうことが
できる。Thereafter, wiring can be performed on the surface of the substrate by a conventional method.
このようにして得られたスルーホール内銅充填窒化アル
ミニウム基板は、焼成後厚み１〜２ ｍｍで、厚み方向
のスルーホール部抵抗が８〜１０ｍ０であった。従来例
の４０〜４５ｍΩと比較して、その低抵抗化は明白であ
る。The thus obtained through-hole copper-filled aluminum nitride substrate had a thickness of 1 to 2 mm after firing, and a resistance of the through hole portion in the thickness direction of 8 to 10 m0. The resistance is clearly lower than that of the conventional example, which is 40 to 45 mΩ.
本発明によれば、銅、金を充填した低抵抗の窒化アルミ
ニウム・スルーホール基板が得られる。According to the present invention, a low resistance aluminum nitride through-hole substrate filled with copper and gold can be obtained.
第１〜３図は本発明の窒化アルミニウム・スルーホール
基板の製造工程を示す断面図である。
１・・・グリーンシート、２・・・スルーホール、３・
・・高融点金属ペースト、
４・・・銅、 １′・・・Ａ Ｊ Ｎ。1 to 3 are cross-sectional views showing the manufacturing process of the aluminum nitride through-hole substrate of the present invention. 1...Green sheet, 2...Through hole, 3.
...High melting point metal paste, 4...Copper, 1'...A JN.
Claims (1)
を穿孔する工程と、 該スルーホールの壁面に、窒化アルミニウム粉末を含む
高融点金属ペーストを付着させ、しかしスルーホールの
孔の中心部には貫通孔を残す工程と、 該グリーンシートを積層し、焼成する工程と、該焼成し
た基板のスルーホール中に銅、金又はこれらの合金を充
填する工程 とを有することを特徴とする窒化アルミニウム基板の製
造方法。1. A step of drilling a through hole in an aluminum nitride green sheet, and a step of attaching a high melting point metal paste containing aluminum nitride powder to the wall surface of the through hole, but leaving a through hole in the center of the through hole. A method for manufacturing an aluminum nitride substrate, comprising the steps of: laminating and firing the green sheets; and filling through holes of the fired substrate with copper, gold, or an alloy thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3610490A JP2747494B2 (en) | 1990-02-19 | 1990-02-19 | Manufacturing method of aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3610490A JP2747494B2 (en) | 1990-02-19 | 1990-02-19 | Manufacturing method of aluminum nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03240289A true JPH03240289A (en) | 1991-10-25 |
| JP2747494B2 JP2747494B2 (en) | 1998-05-06 |
Family
ID=12460465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3610490A Expired - Fee Related JP2747494B2 (en) | 1990-02-19 | 1990-02-19 | Manufacturing method of aluminum nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2747494B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0587382A2 (en) * | 1992-09-05 | 1994-03-16 | Shinko Electric Industries Co. Ltd. | Aluminum nitride circuit board and method of producing it |
| JPH06223623A (en) * | 1992-12-28 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | Paste using copper as blank and ceramic package |
| JP2009176907A (en) * | 2008-01-24 | 2009-08-06 | Ngk Spark Plug Co Ltd | Wiring substrate and its manufacturing method |
| JP2009231649A (en) * | 2008-03-25 | 2009-10-08 | Ngk Spark Plug Co Ltd | Wiring substrate and production method |
-
1990
- 1990-02-19 JP JP3610490A patent/JP2747494B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0587382A2 (en) * | 1992-09-05 | 1994-03-16 | Shinko Electric Industries Co. Ltd. | Aluminum nitride circuit board and method of producing it |
| EP0587382A3 (en) * | 1992-09-05 | 1994-11-23 | Shinko Electric Ind Co | Aluminum nitride circuit board and method of producing it. |
| US5464950A (en) * | 1992-09-05 | 1995-11-07 | Shinko Electric Industries Co., Ltd. | Aluminum nitride circuit board and method of producing same |
| JPH06223623A (en) * | 1992-12-28 | 1994-08-12 | Internatl Business Mach Corp <Ibm> | Paste using copper as blank and ceramic package |
| JP2009176907A (en) * | 2008-01-24 | 2009-08-06 | Ngk Spark Plug Co Ltd | Wiring substrate and its manufacturing method |
| JP2009231649A (en) * | 2008-03-25 | 2009-10-08 | Ngk Spark Plug Co Ltd | Wiring substrate and production method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2747494B2 (en) | 1998-05-06 |
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| Date | Code | Title | Description |
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| LAPS | Cancellation because of no payment of annual fees |