JP2006196810A - Ceramic circuit board and electronic component module - Google Patents

Ceramic circuit board and electronic component module Download PDF

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JP2006196810A
JP2006196810A JP2005008770A JP2005008770A JP2006196810A JP 2006196810 A JP2006196810 A JP 2006196810A JP 2005008770 A JP2005008770 A JP 2005008770A JP 2005008770 A JP2005008770 A JP 2005008770A JP 2006196810 A JP2006196810 A JP 2006196810A
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active metal
brazing material
circuit board
metal brazing
ceramic
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Kenichi Hashimoto
健一 橋本
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To validly prevent the generation of huge amounts of heat due to resistance heating in a conductor connecting metallic circuit boards to each other, and to always normally and stably operate electronic parts such as semiconductor elements to be mounted on the metallic circuit board. <P>SOLUTION: A metallic circuit board 5 is mounted through first active metallic solder 4 materials on the upper and lower faces of a ceramic board 1 having a through-hole 2, and the inner face of the through-hole 2 is coated with second active metallic solder materials 3 electrically connecting the first active metallic solder materials 4 on the upper and lower faces, so that a ceramic circuit board can be configured. The first and second active metallic solder materials 4 and 3 are constituted by containing active metallic materials made of at least one type of titanium, zirconium, hafnium and those hydrides in solder materials with silver/copper alloy as primary components, and the content of copper in the second active metallic solder materials 3 is set so as to be higher than the content of copper in the first active metallic solder materials 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明のセラミック回路基板は、セラミック基板の両面に金属回路板を取着してこれら上下の金属回路板同士をセラミック基板の貫通孔内に配置したろう材で電気的に接続したセラミック回路基板およびそれを用いた電子部品モジュールに関する。   The ceramic circuit board according to the present invention includes a ceramic circuit board in which metal circuit boards are attached to both sides of the ceramic board, and the upper and lower metal circuit boards are electrically connected with a brazing material disposed in a through hole of the ceramic board. The present invention relates to an electronic component module using the same.

近年、パワーモジュール用基板やスイッチングモジュール用基板等の回路基板として、図２に示すようなセラミック基板11上に活性金属ろう材13を介して銅等から成る金属回路板14を接合させたセラミック回路基板が用いられている。   2. Description of the Related Art In recent years, a ceramic circuit in which a metal circuit board 14 made of copper or the like is bonded to a ceramic substrate 11 as shown in FIG. 2 via an active metal brazing material 13 as a circuit board such as a power module board or a switching module board. A substrate is used.

また、これらのセラミック回路基板は、金属回路板14の実装密度を高めるためにセラミック基板11の上下両面に金属回路板14を接合されており、これら上下両面の金属回路板14同士をセラミック基板11に設けた貫通孔12内に配置されている活性金属ろう材13で電気的に接続することが行われている。   In addition, in order to increase the mounting density of the metal circuit boards 14, these ceramic circuit boards are joined to the upper and lower surfaces of the ceramic substrate 11, and the upper and lower surfaces of the metal circuit boards 14 are joined to each other. The active metal brazing material 13 disposed in the through-hole 12 provided in is electrically connected.

かかるセラミック回路基板は、具体的には以下の方法によって製作される。   Specifically, such a ceramic circuit board is manufactured by the following method.

まず、電気絶縁性のセラミックス材料から成り、厚み方向に貫通する貫通孔12を設けたセラミック基板11を準備し、次にセラミック基板11の貫通孔12内に活性金属ろう材13（Ａｇ−Ｃｕ−Ｔｉ−ＩｎペーストまたはＡｇ−Ｃｕ−Ｔｉペースト）を配置するとともに、セラミック基板11の上下両面の所定パターンに印刷塗布する。   First, a ceramic substrate 11 made of an electrically insulating ceramic material and provided with a through hole 12 penetrating in the thickness direction is prepared. Next, an active metal brazing material 13 (Ag—Cu—) is inserted into the through hole 12 of the ceramic substrate 11. (Ti-In paste or Ag-Cu-Ti paste) is disposed and applied to a predetermined pattern on both upper and lower surfaces of the ceramic substrate 11.

次にセラミック基板11上に活性金属ろう材13を間に挟んで銅等から成る金属回路板14を載置する。   Next, a metal circuit board 14 made of copper or the like is placed on the ceramic substrate 11 with an active metal brazing material 13 interposed therebetween.

そして、セラミック基板11の貫通孔12内に配置されている活性金属ろう材13と、セラミック基板11と金属回路板14との間に配されている活性金属ろう材13とを非酸化性雰囲気中にて約800℃の温度に加熱して活性金属ろう材13を溶融させ、この活性金属ろう材13でセラミック基板11と金属回路板14とを接合することによって製作される。
特開平６−１３７２６号公報 特開平６−１２０６３５号公報 特開平１１−３４０６００号公報 Then, the active metal brazing material 13 disposed in the through hole 12 of the ceramic substrate 11 and the active metal brazing material 13 disposed between the ceramic substrate 11 and the metal circuit board 14 are placed in a non-oxidizing atmosphere. The active metal brazing material 13 is melted by heating to a temperature of about 800 ° C. and the ceramic substrate 11 and the metal circuit board 14 are joined by the active metal brazing material 13.
JP-A-6-13726 JP-A-6-120635 JP-A-11-340600

しかしながら、従来のセラミック回路基板では、セラミック基板11の上下両面に接合されている金属回路板14同士を電気的に接続する貫通孔12に配置されている活性金属ろう材13が、加熱して溶融した時に貫通孔12底部に流れ込みやすく貫通孔12上部内側の活性金属ろう材13の厚みが部分的に薄くなりやすいため、その導通抵抗が高くなりやすかった。   However, in the conventional ceramic circuit board, the active metal brazing material 13 disposed in the through hole 12 that electrically connects the metal circuit boards 14 bonded to the upper and lower surfaces of the ceramic substrate 11 is heated and melted. In this case, since the thickness of the active metal brazing material 13 inside the top of the through-hole 12 is likely to flow partially into the bottom of the through-hole 12, the conduction resistance tends to increase.

このため、金属回路板14および貫通孔12内の活性金属ろう材13に電流が流れると、貫通孔12上部内側の活性金属ろう材13の厚みが薄くなっている部分で抵抗発熱し、その熱が金属回路板14上に半田等の接着材を介して接着固定される半導体素子等の電子部品に作用し、電子部品を安定に作動させることができないという問題点を有していた。   For this reason, when a current flows through the metal circuit board 14 and the active metal brazing material 13 in the through hole 12, resistance heat is generated at the portion where the thickness of the active metal brazing material 13 inside the through hole 12 is thin, and the heat However, there is a problem that the electronic component cannot be stably operated by acting on an electronic component such as a semiconductor element which is bonded and fixed onto the metal circuit board 14 via an adhesive such as solder.

従って、本発明は上記問題点を鑑みて完成されたものであり、その目的は、金属回路板同士を接続する導体における抵抗発熱による多量の熱の発生を有効に防止し、金属回路板に実装される半導体素子等の電子部品を常に正常かつ安定に作動させることができるセラミック回路基板である。   Therefore, the present invention has been completed in view of the above problems, and its purpose is to effectively prevent the generation of a large amount of heat due to resistance heat generation in a conductor connecting the metal circuit boards, and to mount on the metal circuit boards. This is a ceramic circuit board that can always operate electronic parts such as semiconductor elements normally and stably.

本発明のセラミック回路基板は、貫通孔を有するセラミック基板の上下面に第一の活性金属ろう材を介して金属回路板を取着して成るとともに、前記貫通孔の内面に上下面の前記第一の活性金属ろう材同士を電気的に接続する第二の活性金属ろう材が被着されたセラミック回路基板であって、前記第一および第二の活性金属ろう材は銀−銅合金を主成分とするろう材にチタン，ジルコニウム，ハフニウムおよびこれらの水素化物の少なくとも１種から成る活性金属材を含有させて成り、前記第二の活性金属ろう材における銅の含有率を前記第一の活性金属ろう材における銅の含有率よりも高くしたことを特徴とする。   The ceramic circuit board of the present invention is formed by attaching metal circuit boards to the upper and lower surfaces of a ceramic substrate having a through hole via a first active metal brazing material, and the upper and lower surfaces of the ceramic circuit board on the inner surface of the through hole. A ceramic circuit board having a second active metal brazing material electrically connected to one active metal brazing material, wherein the first and second active metal brazing materials are mainly silver-copper alloys. An active metal material comprising at least one of titanium, zirconium, hafnium, and hydrides thereof is contained in the brazing material as a component, and the copper content in the second active metal brazing material is determined according to the first active material. It is characterized by being higher than the copper content in the metal brazing material.

本発明の電子部品モジュールは、上記本発明のセラミック回路基板に電子部品を実装したことを特徴とする。   The electronic component module of the present invention is characterized in that an electronic component is mounted on the ceramic circuit board of the present invention.

本発明であるセラミック回路基板では、第一およびの活性金属ろう材は銀−銅合金を主成分とするろう材にチタン，ジルコニウム，ハフニウムおよびこれらの水素化物の少なくとも１種から成る活性金属材を含有させて成り、第二の活性金属ろう材における銅の含有率を第一の活性金属ろう材における銅の含有率よりも高くしたことにより、第二の活性金属ろう材の融点を第一の活性金属ろう材の融点より高くすることができ、セラミック基板両面に印刷塗布された第一の活性金属ろう材を加熱し溶融させて金属回路板を接合させる際に、第一の活性金属ろう材が液状となる温度に加熱されて溶融したとしても、貫通孔内の第二の活性金属ろう材が溶融して低粘度になるのを抑制し、第二の活性金属ろう材が貫通孔底部に大きく流れ込むのを有効に防止できる。よって、貫通孔内側壁面の第二の活性金属ろう材の厚みが部分的に薄くなるのを防ぎ、その導通抵抗が高くなるのをより効果的に防止できる。   In the ceramic circuit board according to the present invention, the first and the active metal brazing materials are made of a brazing material mainly composed of a silver-copper alloy and an active metal material composed of at least one of titanium, zirconium, hafnium and hydrides thereof. By making the content of copper in the second active metal brazing material higher than the content of copper in the first active metal brazing material, the melting point of the second active metal brazing material is increased. The first active metal brazing material can be made higher than the melting point of the active metal brazing material, and the first active metal brazing material printed on both sides of the ceramic substrate is heated and melted to join the metal circuit board. Even when heated to a liquid temperature, the second active metal brazing material in the through hole is prevented from melting and becoming low viscosity, and the second active metal brazing material is placed at the bottom of the through hole. To flow in greatly It is possible to prevent the effect. Therefore, the thickness of the second active metal brazing material on the inner wall surface of the through hole can be prevented from being partially reduced, and the conduction resistance can be more effectively prevented from increasing.

また、貫通孔の内面に被着された第二の活性金属ろう材は、セラミック基板に第一の活性金属ろう材を介して金属回路板を接合する際、第一の活性金属ろう材が押し出されて貫通孔に入り込もうとするので第二の活性金属ろう材が厚くなるため、第二の活性金属ろう材中の銀がセラミック基板中に拡散しやすくなるが、第二の活性金属ろう材の銅の含有率を高くすることにより、金属回路板を接合させる際のセラミック基板中への銀の拡散を有効に防止することもできる。その結果、セラミック回路基板の絶縁性を良好に維持できるとともに拡散した銀が金属回路板表面にまで到達して、金属回路板表面に対するワイヤーボンディング性が低下するのを有効に防止することができる。   In addition, the second active metal brazing material applied to the inner surface of the through hole is extruded when the metal circuit board is joined to the ceramic substrate via the first active metal brazing material. Since the second active metal brazing material becomes thicker as it tries to enter the through-hole, silver in the second active metal brazing material tends to diffuse into the ceramic substrate. By increasing the copper content, it is possible to effectively prevent silver diffusion into the ceramic substrate when the metal circuit board is bonded. As a result, it is possible to effectively maintain the insulation of the ceramic circuit board and effectively prevent the diffused silver from reaching the surface of the metal circuit board and the wire bonding property to the surface of the metal circuit board from being lowered.

以上の結果、金属回路板および貫通孔内の活性金属ろう材に電流が流れたとしても貫通孔内に配置された活性金属ろう材で抵抗発熱が起こり、多量の熱を発生することは無く、金属回路板上に半田等の接着材を介して接着固定される半導体素子等の電子部品は常に適温となり、長期にわたって正常かつ安定に作動させることが可能となる。   As a result of the above, even if current flows through the metal circuit board and the active metal brazing material in the through hole, resistance heating occurs in the active metal brazing material arranged in the through hole, and a large amount of heat is not generated. Electronic components such as semiconductor elements that are bonded and fixed onto a metal circuit board via an adhesive such as solder are always at an appropriate temperature, and can be operated normally and stably over a long period of time.

本発明の電子部品モジュールは、上記本発明のセラミック回路基板に電子部品を実装したことから、上記本発明のセラミック回路基板の特徴を有する、金属回路板に実装される電子部品を常に正常かつ安定に作動させることのできるものとなる。   Since the electronic component module of the present invention is mounted on the ceramic circuit board of the present invention, the electronic component mounted on the metal circuit board having the characteristics of the ceramic circuit board of the present invention is always normal and stable. It will be possible to operate.

次に本発明のセラミック回路基板を添付の図面に基づいて詳細に説明する。   Next, the ceramic circuit board of the present invention will be described in detail with reference to the accompanying drawings.

図１は、本発明のセラミック回路基板の実施の形態の一例の断面図である。図１に示すように、１はセラミック基板、２は貫通孔、３は第二の活性金属ろう材、４は第一の活性金属ろう材、５は金属回路板である。   FIG. 1 is a cross-sectional view of an example of an embodiment of a ceramic circuit board according to the present invention. As shown in FIG. 1, 1 is a ceramic substrate, 2 is a through hole, 3 is a second active metal brazing material, 4 is a first active metal brazing material, and 5 is a metal circuit board.

セラミック基板１は通常は略四角形状であり、金属回路板５を支持する支持部材として機能し、酸化アルミニウム質焼結体，ムライト質焼結体，炭化珪素質焼結体，窒化アルミニウム質焼結体，窒化珪素質焼結体等の電気絶縁材料で形成されている。   The ceramic substrate 1 has a generally rectangular shape and functions as a support member for supporting the metal circuit board 5, and is an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, and an aluminum nitride sintered body. And an electrically insulating material such as a silicon nitride sintered body.

セラミック基板１は、例えば窒化珪素質焼結体から成る場合であれば、窒化珪素，酸化アルミニウム，酸化マグネシウム，酸化イットリウム等の原料粉末に適当な有機バインダ，可塑剤，溶剤を添加混合して泥漿物に従来周知のドクターブレード法やカレンダーロール法を採用することによってセラミックグリーンシート（セラミック生シート）を形成し、次にこのセラミックグリーンシートに適当な打ち抜き加工を施して所定形状となすとともに、必要に応じて複数枚を積層して成形体となし、しかる後、これを窒素雰囲気等の非酸化性雰囲気にて1600〜2000℃の温度で焼成することによって製作される。   If the ceramic substrate 1 is made of, for example, a silicon nitride sintered body, an appropriate organic binder, plasticizer, and solvent are added to and mixed with raw material powders such as silicon nitride, aluminum oxide, magnesium oxide, yttrium oxide, and the like. A ceramic green sheet (ceramic green sheet) is formed by adopting a conventionally known doctor blade method or calendar roll method on the object, and then this ceramic green sheet is appropriately punched into a predetermined shape and is necessary. Accordingly, a plurality of sheets are laminated to form a molded body, and thereafter, the molded body is fired at a temperature of 1600 to 2000 ° C. in a non-oxidizing atmosphere such as a nitrogen atmosphere.

次に金属回路板５を製作する。金属回路板５は銅等から成り、銅のインゴット（塊）に圧延加工法や打ち抜き加工法等、従来周知の金属加工法を施すことによって、例えば500μｍの厚みで、所定パターンに形成される。   Next, the metal circuit board 5 is manufactured. The metal circuit board 5 is made of copper or the like, and is formed in a predetermined pattern with a thickness of, for example, 500 μm by applying a conventionally known metal processing method such as a rolling method or a punching method to a copper ingot.

金属回路板５が銅から成る場合は、これを無酸素銅で形成しておくことが好ましい。無酸素銅は第一の活性金属ろう材４を介してセラミック基板１に取着する際に銅の表面が銅中に存在する酸素により酸化されることなく第一の活性金属ろう材４との濡れ性が良好となるので、金属回路板５のセラミック基板１への第一の活性金属ろう材４を介しての取着接合が強固となる。従って、金属回路板５は、銅から成る場合はこれを無酸素銅で形成しておくことが好ましい。   When the metal circuit board 5 is made of copper, it is preferably formed of oxygen-free copper. When the oxygen-free copper is attached to the ceramic substrate 1 via the first active metal brazing material 4, the surface of the copper is not oxidized by oxygen present in the copper, and the first active metal brazing material 4 is not oxidized. Since the wettability is improved, the attachment and bonding of the metal circuit board 5 to the ceramic substrate 1 through the first active metal brazing material 4 is strengthened. Therefore, when the metal circuit board 5 is made of copper, it is preferably formed of oxygen-free copper.

また、第一および第二の活性金属ろう材４，３は、銀−銅合金を主成分とするろう材にチタン，ジルコニウム，ハフニウムおよびこれらの水素化物の少なくとも１種から成る活性金属材を含有させて成る。ここで銀−銅合金を主成分とするというのは、第一または第二の活性金属ろう材４，３における銀−銅合金の含有率が９０質量％以上であることをいう。   The first and second active metal brazing materials 4 and 3 contain an active metal material composed of at least one of titanium, zirconium, hafnium, and hydrides thereof as a brazing material mainly composed of a silver-copper alloy. Let me. Here, having a silver-copper alloy as a main component means that the content of the silver-copper alloy in the first or second active metal brazing material 4, 3 is 90% by mass or more.

本発明のセラミック回路基板においては、第二の活性金属ろう材３における銅の含有率が第一の活性金属ろう材４における銅の含有率よりも高くなるように、貫通孔２内に配置されることが重要である。   In the ceramic circuit board of this invention, it arrange | positions in the through-hole 2 so that the content rate of copper in the 2nd active metal brazing material 3 may become higher than the content rate of copper in the 1st active metal brazing material 4. It's important to.

つまり、貫通孔２内に配置する第二の活性金属ろう材３中における銅の含有率が第一の活性金属ろう材４における銅の含有率に対して同等以下であれば、非酸化性雰囲気中にて約800℃の温度に加熱して第一活性金属ろう材４を溶融させ、この第一の活性金属ろう材４でセラミック基板１と金属回路板５とを接合する際、貫通孔２内に配置されている第二の活性金属ろう材３の融点が第一の活性金属ろう材４の融点と同等以下となり、第一の活性金属ろう材４が溶融した時に第二の活性金属ろう材３も同様に溶融し、貫通孔２底部に流れ込みやすくなって貫通孔２上部内側における第二の活性金属ろう材３の厚みが部分的に薄くなりやすくなる。その結果、その導通抵抗が高くなり、金属回路板５および貫通孔２内の第二の活性金属ろう材３に電流が流れると、貫通孔２上部内側の第二の活性金属ろう材３の厚みが薄くなっている部分で抵抗発熱し、その熱が金属回路板５上に半田等の接着材を介して接着固定される半導体素子等の電子部品に作用し、電子部品を安定に作動させることができなくなる。   That is, if the copper content in the second active metal brazing material 3 disposed in the through hole 2 is equal to or less than the copper content in the first active metal brazing material 4, a non-oxidizing atmosphere When the first active metal brazing material 4 is melted by heating to a temperature of about 800 ° C. and the ceramic substrate 1 and the metal circuit board 5 are joined with the first active metal brazing material 4, the through hole 2 When the melting point of the second active metal brazing material 3 arranged in the inside becomes equal to or lower than the melting point of the first active metal brazing material 4, the second active metal brazing material 4 is melted. Similarly, the material 3 is melted and easily flows into the bottom of the through hole 2, and the thickness of the second active metal brazing material 3 on the inside of the upper portion of the through hole 2 is likely to be partially reduced. As a result, when the conduction resistance increases and a current flows through the metal circuit board 5 and the second active metal brazing material 3 in the through hole 2, the thickness of the second active metal brazing material 3 inside the through hole 2 is increased. Resistive heat is generated in the thinned portion, and the heat acts on electronic components such as semiconductor elements that are bonded and fixed on the metal circuit board 5 via an adhesive such as solder, so that the electronic components can be operated stably. Can not be.

これに対して、本発明においては貫通孔２内に配置する第二の活性金属ろう材３における銅の含有率が前記第一の活性金属ろう材４における銅の含有率よりも高いため、第二の活性金属ろう材３は第一の活性金属４より高い融点を有することにより、貫通孔２内の第二の活性金属ろう材３が貫通孔２底部に大きく流れ込むことが抑制され、貫通孔２内側壁面の第二の活性金属ろう材３の厚みが部分的に薄くなるのを防ぎ、その導通抵抗が高くなるのをより効果的に防止できる。   In contrast, in the present invention, the copper content in the second active metal brazing material 3 disposed in the through hole 2 is higher than the copper content in the first active metal brazing material 4. Since the second active metal brazing material 3 has a melting point higher than that of the first active metal 4, the second active metal brazing material 3 in the through hole 2 is suppressed from flowing into the bottom of the through hole 2. 2 The thickness of the second active metal brazing material 3 on the inner wall surface can be prevented from being partially reduced, and the conduction resistance can be more effectively prevented from increasing.

また、貫通孔２の内面に被着された第二の活性金属ろう材３は、セラミック基板１に第一の活性金属ろう材４を介して金属回路板５を接合する際、第一の活性金属ろう材４が押し出されて貫通孔２に入り込もうとするので第二の活性金属ろう材３が厚くなるため、第二の活性金属ろう材３中の銀がセラミック基板１中に拡散しやすくなるが、第二の活性金属ろう材３の銅の含有率を高くすることにより、金属回路板５を接合させる際のセラミック基板１中への銀の拡散を有効に防止することもできる。その結果、セラミック回路基板の絶縁性を良好に維持できるとともに拡散した銀が金属回路板５表面にまで到達して、金属回路板５表面に対するワイヤーボンディング性が低下するのを有効に防止することができる。   In addition, the second active metal brazing material 3 deposited on the inner surface of the through-hole 2 has the first activity when the metal circuit board 5 is joined to the ceramic substrate 1 via the first active metal brazing material 4. Since the metal brazing material 4 is pushed out and tries to enter the through-hole 2, the second active metal brazing material 3 becomes thick, so that the silver in the second active metal brazing material 3 easily diffuses into the ceramic substrate 1. However, by increasing the copper content of the second active metal brazing material 3, it is possible to effectively prevent silver diffusion into the ceramic substrate 1 when the metal circuit board 5 is joined. As a result, it is possible to effectively maintain the insulation of the ceramic circuit board and effectively prevent the diffused silver from reaching the surface of the metal circuit board 5 and deteriorating the wire bonding property to the surface of the metal circuit board 5. it can.

第一および第二の活性金属ろう材４，３は、例えば、銀粉末と銅粉末とを含むろう材粉末、または銀−銅合金粉末を含むろう材粉末に、チタン、ジルコニウム、ハフニウムおよびこれらの水素化物の少なくとも１種から成る活性金属材を第一または第二の活性金属ろう材４，３の全量に対し例えば２〜５質量％含有させ、これらに適当な有機溶剤、溶媒を添加混合し、混練することによって活性金属ろう材ペーストとして製作される。そして、この活性金属ろう材ペーストをセラミック基板１に塗布して上下に金属回路板５を積層した後、加熱することにより、第一および第二の活性金属ろう材４，３がセラミック基板１や金属回路板５と強固に密着する。   The first and second active metal brazing materials 4 and 3 are, for example, brazing material powder containing silver powder and copper powder, or brazing material powder containing silver-copper alloy powder, titanium, zirconium, hafnium and these An active metal material composed of at least one hydride is contained, for example, in an amount of 2 to 5% by mass with respect to the total amount of the first or second active metal brazing material 4 or 3, and an appropriate organic solvent or solvent is added and mixed therewith. It is manufactured as an active metal brazing paste by kneading. Then, the active metal brazing paste is applied to the ceramic substrate 1 and the metal circuit boards 5 are stacked on top and bottom, and then heated, so that the first and second active metal brazing materials 4 and 3 become the ceramic substrate 1 and The metal circuit board 5 is firmly adhered.

本発明のセラミック回路基板において、好ましくは、第二の活性金属ろう材３における銅の含有率が第一の活性金属ろう材４における銅の含有率の１．２５〜２．５倍であるのがよい。   In the ceramic circuit board of the present invention, the copper content in the second active metal brazing material 3 is preferably 1.25 to 2.5 times the copper content in the first active metal brazing material 4. Is good.

１．２５倍未満であると、第二の活性金属ろう材３の融点が第一の活性金属ろう材４と近いものとなり、第二の活性金属ろう材３が貫通孔２底部への流れ込むのを防止するという効果が小さくなりやすい。また、２．５倍を超えると第二の活性金属ろう材３の融点が第一の活性金属ろう材４に比べて高くなり過ぎ、金属回路板５を接合する際、第二の活性金属ろう材３の溶融が起こり難くなり、第一および第二の活性金属ろう材４，３の境界で接続不良が生じ易くなったり、貫通孔２内面に対する第二の活性金属ろう材３の密着性が低下しやすくなったりする。  If it is less than 1.25 times, the melting point of the second active metal brazing material 3 is close to that of the first active metal brazing material 4, and the second active metal brazing material 3 flows into the bottom of the through hole 2. The effect of preventing this tends to be small. On the other hand, if it exceeds 2.5 times, the melting point of the second active metal brazing material 3 becomes too high as compared with the first active metal brazing material 4, and when joining the metal circuit board 5, It becomes difficult for the material 3 to melt, the connection between the first and second active metal brazing materials 4 and 3 is likely to be poor, and the adhesion of the second active metal brazing material 3 to the inner surface of the through hole 2 is improved. It tends to decrease.

また、貫通孔２内に配置する第二の活性金属ろう材３は、第二の活性金属ろう材３における銀−銅合金を主成分とするろう材全体に対し銅が４０質量％未満だと、ろう材の融点が８２０℃以下となりセラミック基板１の上下面に配置する第一の活性金属ろう材４の融点に近くなるため、第一の活性金属ろう材４を加熱して溶融した際に、第二の活性金属ろう材３も同様に溶融し、貫通孔２底部に流れ込みやすくなる。また、銅が５０質量％を越えると、ろう材の融点は８５０℃以上となり、第一の活性金属ろう材４を加熱して溶融した際に第二の活性金属ろう材３が溶融しにくくなって貫通孔２内壁に対する接合強度が低下しやすくなる。従って、第二の活性金属ろう材３は、第二の活性金属ろう材３における銀−銅合金を主成分とするろう材全体に対して銅が４０〜５０質量％の範囲が好ましい。   The second active metal brazing material 3 disposed in the through hole 2 has a copper content of less than 40% by mass with respect to the entire brazing material mainly composed of a silver-copper alloy in the second active metal brazing material 3. When the first active metal brazing material 4 is heated and melted, the melting point of the brazing material becomes 820 ° C. or less and is close to the melting point of the first active metal brazing material 4 disposed on the upper and lower surfaces of the ceramic substrate 1. The second active metal brazing material 3 is similarly melted and easily flows into the bottom of the through hole 2. Moreover, when copper exceeds 50 mass%, melting | fusing point of a brazing material will be 850 degreeC or more, and when the 1st active metal brazing material 4 is heated and fuse | melted, the 2nd active metal brazing material 3 becomes difficult to melt | dissolve. As a result, the bonding strength with respect to the inner wall of the through-hole 2 tends to decrease. Therefore, the second active metal brazing material 3 preferably has a copper content in the range of 40 to 50% by mass with respect to the entire brazing material mainly composed of the silver-copper alloy in the second active metal brazing material 3.

セラミック基板１の上下面に配置される第一の活性金属ろう材４は、第一の活性金属ろう材４における銀−銅合金を主成分とするろう材全体に対し銅が２０質量％未満または４０％を越えると、第一の活性金属ろう材４のセラミック基板１や金属回路板５に対する濡れ性が低下して、セラミック基板１と金属回路板５との接合強度が低下しやすくなる。従って、第一の活性金属ろう材４は、第一の活性金属ろう材４における銀−銅合金を主成分とするろう材全体に対し銅が２０〜４０質量％の範囲が好ましい。   The first active metal brazing material 4 disposed on the upper and lower surfaces of the ceramic substrate 1 is less than 20% by mass of copper with respect to the entire brazing material mainly composed of silver-copper alloy in the first active metal brazing material 4 or If it exceeds 40%, the wettability of the first active metal brazing material 4 to the ceramic substrate 1 and the metal circuit board 5 is lowered, and the bonding strength between the ceramic substrate 1 and the metal circuit board 5 tends to be lowered. Accordingly, the first active metal brazing material 4 preferably has a copper content in the range of 20 to 40% by mass with respect to the entire brazing material mainly composed of the silver-copper alloy in the first active metal brazing material 4.

好ましくは、第一および第二の活性金属ろう材４，３は、銀−銅合金の含有率（銀の含有率と銅の含有率の合計）が同じであるとともに、銀−銅合金以外の残部金属の成分および組成比が同じであるのがよい。これにより、第一と第二の活性金属ろう材４，３とにおいて、銀と銅との含有比率のみが異なることとなり、近似した成分となるので、第一および第二の活性金属ろう材４，３同士が非常になじみやすくなり、第一および第二の活性金属ろう材４，３同士の界面に剥離などが生じるのを有効に防止して導通信頼性を高めることができる。   Preferably, the first and second active metal brazing filler metals 4 and 3 have the same silver-copper alloy content (total of silver content and copper content) and other than silver-copper alloy. The balance metal components and composition ratios should be the same. As a result, the first and second active metal brazing materials 4 and 3 differ only in the content ratio of silver and copper, and are similar components. , 3 can be easily adapted to each other, and it is possible to effectively prevent peeling and the like from occurring at the interface between the first and second active metal brazing materials 4, 3, thereby improving conduction reliability.

また、第一および第二の活性金属ろう材４，３となる活性金属ろう材ペーストに用いる銀粉末と銅粉末、または銀−銅合金粉末を含むろう材粉末の粒径は１μｍ未満になるとろう材粉末の比表面積が大きくなってろう材粉末表面に形成される酸化皮膜中に多くの酸素が存在し、酸素によって第一および第二の活性金属ろう材４，３のセラミック基板１や金属回路板５に対する濡れ性が低下して、セラミック基板１と金属回路板５との接合強度が低下しやすくなる。したがって、ろう材粉末の粒径は１μｍ以上としておくことが好ましい。   Moreover, the particle size of the brazing material powder containing the silver powder and the copper powder or the silver-copper alloy powder used for the active metal brazing paste used as the first and second active metal brazing materials 4 and 3 will be less than 1 μm. A large amount of oxygen is present in the oxide film formed on the surface of the brazing filler metal powder due to an increase in the specific surface area of the brazing powder, and the ceramic substrate 1 and the metal circuit of the first and second active metal brazing filler metals 4 and 3 due to the oxygen. The wettability with respect to the plate 5 decreases, and the bonding strength between the ceramic substrate 1 and the metal circuit plate 5 tends to decrease. Therefore, the particle size of the brazing filler metal powder is preferably 1 μm or more.

更にチタン、ジルコニウム、ハフニウムおよびこれらの水素化物の少なくとも１種から成る活性金属材粉末はろう材をセラミック基板１に強固に接合する作用をなし、活性金属材粉末が第一および第二の活性金属ろう材４，３の金属成分全体の２質量％未満となると活性金属材の絶対量が不足してろう材をセラミック基板１に強固に接合させることが困難になり、また第一および第二の活性金属ろう材４，３の金属成分全体の５質量％を越えると活性金属材とセラミック基板１との間に脆弱な反応層が厚く形成され、結果的に第一および第二の活性金属ろう材４，３とセラミック基板１との接合強度が低下しやすくなる。したがって、活性金属材の含有率は第一および第二の活性金属ろう材４，３の金属成分全体の２〜５質量％の範囲にしておくことが好ましい。   Furthermore, the active metal powder composed of at least one of titanium, zirconium, hafnium and hydrides thereof serves to firmly bond the brazing material to the ceramic substrate 1, and the active metal powder is the first and second active metals. When the amount is less than 2% by mass of the total metal components of the brazing materials 4 and 3, the absolute amount of the active metal material is insufficient, and it becomes difficult to firmly join the brazing material to the ceramic substrate 1. If it exceeds 5% by mass of the total metal components of the active metal brazing materials 4 and 3, a fragile reaction layer is formed between the active metal material and the ceramic substrate 1, resulting in the first and second active metal brazing. The bonding strength between the materials 4 and 3 and the ceramic substrate 1 tends to decrease. Therefore, the content of the active metal material is preferably in the range of 2 to 5% by mass with respect to the entire metal components of the first and second active metal brazing materials 4 and 3.

本発明のセラミック回路基板は、以下のようにして作製される。先ず、セラミック基板１の貫通穴２内の内側に第二の活性金属ろう材ペーストを従来周知のスクリーン垂れ込み印刷法を用いて印刷塗布する。   The ceramic circuit board of the present invention is manufactured as follows. First, the second active metal brazing paste is printed and applied to the inside of the through hole 2 of the ceramic substrate 1 by using a conventionally known screen sagging printing method.

次にセラミック基板１の上下面に第一の活性金属ろう材ペーストを従来周知のスクリーン印刷法を用いて、例えば30〜50μｍの厚さで所定パターンに印刷塗布するとともに、所定パターンに印刷塗布された第一の活性金属ろう材ペースト上に金属回路板５を載置する。   Next, the first active metal brazing paste is applied to the upper and lower surfaces of the ceramic substrate 1 in a predetermined pattern with a thickness of, for example, 30 to 50 μm using a conventionally known screen printing method. The metal circuit board 5 is placed on the first active metal brazing paste.

そしてセラミック基板１と金属回路板５との間に配されている第一および第二の活性金属ろう材ペーストを、金属回路板５に１ｃｍ２あたり50〜100ｇの加重をかけながら非酸化性雰囲気中にて約800℃の温度に加熱し、第一および第二の活性金属ろう材ペーストの有機溶剤や溶媒を気散させるとともにろう材を溶融せしめセラミック基板１の上下面と金属回路板５を接合させることによって、セラミック基板１の上下面に金属回路板５が取着され、セラミック回路基板となる。 Then, the first and second active metal brazing pastes disposed between the ceramic substrate 1 and the metal circuit board 5 are subjected to a non-oxidizing atmosphere while applying a weight of 50 to 100 g per cm 2 to the metal circuit board 5. The inside of the ceramic substrate 1 is heated to a temperature of about 800 ° C. to disperse the organic solvent and solvent of the first and second active metal brazing material pastes, and the brazing material is melted to connect the upper and lower surfaces of the ceramic substrate 1 and the metal circuit board 5. By joining, the metal circuit board 5 is attached to the upper and lower surfaces of the ceramic substrate 1 to form a ceramic circuit substrate.

さらに、上記本発明のセラミック回路基板の金属回路板５上に半導体素子などの電子部品を実装することにより本発明の電子部品モジュールとなる。これにより、上記本発明のセラミック回路基板の特徴を有する、金属回路板５に実装される電子部品を常に正常かつ安定に作動させることのできるものとなる。   Furthermore, the electronic component module of the present invention is obtained by mounting electronic components such as semiconductor elements on the metal circuit board 5 of the ceramic circuit board of the present invention. Thereby, the electronic component mounted on the metal circuit board 5 having the characteristics of the ceramic circuit board of the present invention can always be operated normally and stably.

なお、本発明は上述の最良の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲で種々の変更を行うことは何等差し支えない。   Note that the present invention is not limited to the above-described best mode, and various modifications can be made without departing from the scope of the present invention.

本発明のセラミック回路基板の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the ceramic circuit board of this invention. 従来のセラミック回路基板の断面図である。It is sectional drawing of the conventional ceramic circuit board.

符号の説明Explanation of symbols

１：セラミック基板
２：貫通孔
３：第二の活性金属ろう材
４：第一の活性金属ろう材
５：金属回路板 1: Ceramic substrate 2: Through hole 3: Second active metal brazing material 4: First active metal brazing material 5: Metal circuit board

Claims (2)

貫通孔を有するセラミック基板の上下面に第一の活性金属ろう材を介して金属回路板を取着して成るとともに、前記貫通孔の内面に上下面の前記第一の活性金属ろう材同士を電気的に接続する第二の活性金属ろう材が被着されたセラミック回路基板であって、前記第一および第二の活性金属ろう材は銀−銅合金を主成分とするろう材にチタン，ジルコニウム，ハフニウムおよびこれらの水素化物の少なくとも１種から成る活性金属材を含有させて成り、前記第二の活性金属ろう材における銅の含有率を前記第一の活性金属ろう材における銅の含有率よりも高くしたことを特徴とするセラミック回路基板。 The metal circuit board is attached to the upper and lower surfaces of the ceramic substrate having a through hole via a first active metal brazing material, and the first active metal brazing materials on the upper and lower surfaces are disposed on the inner surface of the through hole. A ceramic circuit board on which a second active metal brazing material to be electrically connected is deposited, wherein the first and second active metal brazing materials are titanium, a brazing material mainly composed of a silver-copper alloy, An active metal material comprising at least one of zirconium, hafnium, and hydrides thereof is contained, and the copper content in the second active metal brazing material is defined as the copper content in the first active metal brazing material. A ceramic circuit board characterized by a higher height. 請求項１記載のセラミック回路基板に電子部品を実装したことを特徴とする電子部品モジュール。 An electronic component module comprising an electronic component mounted on the ceramic circuit board according to claim 1.
JP2005008770A 2005-01-17 2005-01-17 Ceramic circuit board and electronic component module Pending JP2006196810A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012081425A1 (en) * 2010-12-13 2012-06-21 株式会社トクヤマ Ceramic via substrate, metallized ceramic via substrate, and method for manufacturing both

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012081425A1 (en) * 2010-12-13 2012-06-21 株式会社トクヤマ Ceramic via substrate, metallized ceramic via substrate, and method for manufacturing both

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