JPH03239344A - Wafer detection apparatus - Google Patents
Wafer detection apparatusInfo
- Publication number
- JPH03239344A JPH03239344A JP2036915A JP3691590A JPH03239344A JP H03239344 A JPH03239344 A JP H03239344A JP 2036915 A JP2036915 A JP 2036915A JP 3691590 A JP3691590 A JP 3691590A JP H03239344 A JPH03239344 A JP H03239344A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- slit
- wafers
- cassette
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims description 15
- 235000012431 wafers Nutrition 0.000 claims abstract description 86
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ウェーハに各種処理を行い半導体を製造する
半導体製造設備に於けるウェーハ検知装置に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wafer detection device in a semiconductor manufacturing facility that performs various processes on wafers to manufacture semiconductors.
［従来の技術］
半導体製造設備は、シリコンのウェーハに各種薄膜を蒸
着し、更にエツチングする等、多数の工程に亘る処理を
施し、半導体を製造するが、各処理工程へのウェーハの
供給は、ウェーハをカセットへ装填し、このカセットを
装置にセラ１〜することで行う。[Prior Art] Semiconductor manufacturing equipment processes silicon wafers through a number of processes, such as vapor deposition of various thin films and further etching, to manufacture semiconductors, but the supply of wafers to each processing process is This is carried out by loading the wafer into a cassette and loading the cassette into the apparatus.
カセットからボー１〜へ、或は処理ステーションから処
理ステーションへのウェーハの移載は、半導体製３ａ設
備に設けられたウェーハ移載機、ウェーハ搬送機によっ
て行われる。Wafers are transferred from the cassette to the board 1 or from the processing station to the processing station by a wafer transfer machine and a wafer transport machine provided in the semiconductor equipment 3a.
ところで、ウェーハの処理、ウェーハの移載について、
円滑に、無駄なく装置を稼動させる為には、カセッ１〜
内のハンドリンクしようとする位置に正しくウェーハか
挿入されていなければならない。By the way, regarding wafer processing and wafer transfer,
In order to operate the device smoothly and without waste, it is necessary to
The wafer must be inserted correctly in the position to be hand-linked.
従って、前記半導体製造設備には、カセット内の各ウェ
ーハを検知するウェーハ検知装置が設けられる。Therefore, the semiconductor manufacturing equipment is provided with a wafer detection device that detects each wafer in the cassette.
従来のウェーハ検知装置としては特開昭６３−１３３４
４号、特開昭６４−７４３号に示されるものがある。As a conventional wafer detection device, Japanese Patent Application Laid-Open No. 63-1334
No. 4, and JP-A-64-743.
これらに示されるウェーハ検知装置は、投光素子と受光
素子を用い、ウェーハが投光素子と受光素子との光路を
遮断した場合にウヱーハ有の検出を行う様にしたもので
ある。The wafer detection device shown in these uses a light projecting element and a light receiving element, and detects the presence of a wafer when the wafer blocks the optical path between the light projecting element and the light receiving element.
以Ｆ、第３図に於いて略述する。A brief description will be given below with reference to FIG.
図中１ ！ｉウェーハカセット、２はウェーハ３は光学
的ウェーハ検出センサを示す。1 in the diagram! i wafer cassette, 2 wafer 3 an optical wafer detection sensor;
−７エーハセンザ３は、それぞれ投光素子４と受光素子
５とを具備し、ウェーハカセット１の各ウェーハ２挿入
位置に対応して設けられている。-7 AHA sensors 3 each include a light emitting element 4 and a light receiving element 5, and are provided corresponding to each wafer 2 insertion position of the wafer cassette 1.
ウェーハ２が挿入されているとウェーハ２の周辺部が・
ンエーハセンサ３の光路を遮断して、前記ウェーハセン
サ３はウェーハ２を検知の信号を出力する。When wafer 2 is inserted, the periphery of wafer 2
The optical path of the wafer sensor 3 is blocked, and the wafer sensor 3 outputs a signal to detect the wafer 2.
［発明が解決しようとする課題］
然し、上記した従来のウェーハ検知装置では、カセッ１
〜に収納されるウェーハの数だけウェー線を発するスリ
ット光源を設（１、該スリブｌ−光源と対峙させ前記カ
セットの＠側方に前記スリット状平行光線の幅以上の受
光面長さを有する受光センサを設け、ウェーハかスリッ
ト状平行光線を遮ぎる櫟光酪を決定し、前記受光センサ
が投影されるウェーハの陰影を検知するＳ構成したこと
を特徴とするものである６
［作 用］
ウェーハの有無により受光センサが検知するウェーハの
陰影の状態か変化する。従って、この陰影の状態により
、ウェーハ両波状態が検知される。[Problem to be solved by the invention] However, in the conventional wafer detection device described above, the cassette 1
A slit light source that emits wafer lines equal to the number of wafers stored in ~ is provided (1, the slit l- is opposed to the light source and has a light-receiving surface length larger than the width of the slit-shaped parallel light beam on the side of the cassette. A light receiving sensor is provided, a wafer or a slit-shaped parallel light beam is determined to block the parallel light beam, and the light receiving sensor is configured to detect a shadow of the wafer onto which it is projected.6 [Function] The state of the wafer shadow detected by the light receiving sensor changes depending on the presence or absence of the wafer.Therefore, the wafer double wave state is detected from the state of this shadow.
「実 施 例］ 以下、図面を参照しつつ本発明の一実施例を説明する。"Example] An embodiment of the present invention will be described below with reference to the drawings.
尚、第１図中、第３図中で示したものと同一のらのには
同符号を付しである。Note that the same numbers as those shown in FIG. 1 and FIG. 3 are given the same numbers.
７は発光体、レンズスリット等により構成され、少なく
ともカセット１のウェーハ収納高さ１１に略等しい幅を
有するスリット状の平行光線ハセンサを設εフなければ
ならず、Ｘウェーハとウェーハとの狭小な間隙に設置し
なければならないという場所的な制約もあり、高価で製
作も難しいという問題があった。更に、ウェーハは製品
品質を保持する為、如何なる汚染も避けな１、−＋れば
ならないが、前記従来のものでは、ウェーハセンサ１の
溝部１ａにウェーハ２の周辺を挿入することになるので
、ウェーハセンサ３との相対付置ずれが生じた場合は、
ウェーハ２かウェーハセンサ３に接触して汚染され、或
は接触による破損の虞れがあり、又ウェーハセンサ３が
ウェーハ２に近接している為、塵による汚染も考えられ
る。7 consists of a light emitting body, a lens slit, etc., and must be equipped with a slit-shaped parallel beam sensor having at least a width approximately equal to the wafer storage height 11 of the cassette 1. There was also the problem of location constraints as it had to be installed in a gap, and it was expensive and difficult to manufacture. Furthermore, in order to maintain product quality, the wafer must be protected from any contamination, but in the conventional method, the periphery of the wafer 2 is inserted into the groove 1a of the wafer sensor 1. If a relative misalignment with the wafer sensor 3 occurs,
There is a risk that the wafer 2 or the wafer sensor 3 will come into contact with each other and be contaminated, or be damaged due to the contact, and since the wafer sensor 3 is close to the wafer 2, contamination by dust is also considered.
本発明は、上記実情に鑑み構造が簡潔て、而もウェーハ
との接触を完全に防止し得るウェーハ検知装置を提供し
ようとするものである。In view of the above circumstances, it is an object of the present invention to provide a wafer detection device that has a simple structure and can completely prevent contact with the wafer.
Ｆ課題を解決するための手段１
本発明は、ウェーハか装填されるカセットの１側方に少
なくともウェーハの収納高さ以上の１福を有し、ウェー
ハと平行なスリッｌ〜状十行光をウェーハと平行に発す
るスリット光源、８はカセット１を挟みスリット光源７
と対峙して設けられるスクリーンであり、カセット１か
光路を遮られない様スリット光源７とスクリーン８の配
置が決定されている。９は前記スリット状平行光線と同
一の光軸上に該平行光線と方向を合致させて設けた直線
状の受光センサであり、該受光センサ９の受光面は前記
平行光線の幅以上の長さを有している。Means for Solving Problem 1 The present invention has a cassette on one side of the cassette in which the wafers are loaded, and has a slit parallel to the wafer. A slit light source 8 emits parallel to the wafer, a slit light source 7 with the cassette 1 in between.
The arrangement of the slit light source 7 and the screen 8 is determined so that the cassette 1 or the optical path is not obstructed. Reference numeral 9 denotes a linear light-receiving sensor provided on the same optical axis as the slit-shaped parallel light beam and aligned in direction with the parallel light beam, and the light-receiving surface of the light-receiving sensor 9 has a length equal to or greater than the width of the parallel light beam. have.
１１は信月処理器、１２はパターン設定器、１３は演算
処理器、１５は半導体製造設備の制御装置、１４は表示
器である。11 is a Shingetsu processor, 12 is a pattern setting device, 13 is an arithmetic processor, 15 is a control device for semiconductor manufacturing equipment, and 14 is a display device.
以下、作用を説明する２
スリット状平行光線の光路途中にウェーハ２かあり、ス
リット光源７よりスリット状平行光線をスクリーン８に
向って発すると、ウェーハ２により部分的に光路が遮き
′られ、スクリーン８には櫛歯状の影が投影される。The operation will be explained below.2 There is a wafer 2 in the optical path of the slit-shaped parallel light beam, and when the slit-shaped parallel light beam is emitted from the slit light source 7 toward the screen 8, the optical path is partially blocked by the wafer 2. A comb-shaped shadow is projected onto the screen 8.
前記受光センサ９ｃよ、例えはＣＯＤラインセンサの様
なものであり、受光面全長に亘って各位置の明暗に対応
する電気信号を発するものである。The light receiving sensor 9c is, for example, a COD line sensor, and emits electrical signals corresponding to the brightness and darkness of each position over the entire length of the light receiving surface.
受光センサ９からの信号は、信号処理器１１に於いてデ
ジタル化され、各位置に対応する明暗信号（” １ ”
、 ”Ｏ”信号）として記憶される。The signal from the light receiving sensor 9 is digitized in the signal processor 11, and is converted into a brightness signal ("1") corresponding to each position.
, "O" signal).
一方前記パターン設定器１２には、カセット１の全ての
位置にウェーハ２が装填された状態での各位置に対する
明暗信号が設定入力されている。尚、該明暗信号の設定
は全部にウェーハか装填されたカセットについて得られ
る受光センサ９からの明暗信号を入力してもよい。On the other hand, the pattern setter 12 is inputted with brightness signals for each position when the wafers 2 are loaded in all positions of the cassette 1. The brightness signal may be set by inputting the brightness signal from the light receiving sensor 9 obtained for all cassettes loaded with wafers.
而して、演算処理器１３では、受光センサ９からの明暗
信号（以下検知信号）の各位置について、同位置のパタ
ーン設定器１２に入力されている明暗信号く以下基準信
号）を比較する。受光センサ９からの信号、パターン設
定器１２に設定した基準信号を受光面全長に亘って走査
して比較する。The arithmetic processor 13 then compares each position of the bright/dark signal (hereinafter referred to as a detection signal) from the light receiving sensor 9 with the bright/dark signal inputted to the pattern setter 12 at the same position (hereinafter referred to as a reference signal). The signal from the light receiving sensor 9 and the reference signal set in the pattern setting device 12 are scanned over the entire length of the light receiving surface and compared.
走査して得られるパターンの相違により、どの位置のウ
ェーハが無いかが判断される（第２［発明の効果］
以上述べた如く、本発明によれば、１つの光源と１つの
受光センサをカセッｌ〜を挟んで配置するだけの極めて
簡単な構成でよく、又ウェーハから離れた位置に設けら
れるので接触の虞れが全くなくヘウェーハの汚染、ウェ
ーハの破損が生じることかない。又、ウェーハの有無に
ついて微妙な判定とならないので再現性かよく、検知精
度が高い。更に、構造が簡単であるので、安価で且保守
も容易である等の優れた効果を発揮する。Based on the difference in the pattern obtained by scanning, it is determined which position of the wafer is absent (Second Effect of the Invention) As described above, according to the present invention, one light source and one light receiving sensor can be combined into a cassette. It is sufficient to have an extremely simple configuration of simply placing the wafer between the wafer and the wafer, and since it is located at a distance from the wafer, there is no risk of contact and contamination of the wafer or damage to the wafer.Also, regarding the presence or absence of the wafer, Since it does not make delicate judgments, it has good reproducibility and high detection accuracy.Furthermore, since the structure is simple, it exhibits excellent effects such as being inexpensive and easy to maintain.
第１図は本発明に係る一実施例の基本構成図、第２図は
検知パターンを示す線図、第３図は従来間の説明図であ
る。
１はウェーハカセット、２はウェーハ、７はスリット光
源、９は受光センサ、１１は信号処理器、１２はパター
ン設定器、１３は演算処理器を示す。
図参照）。
第２図中、ａは検知信号、ｂは基準信号を示している。
尚、Ｌ記パターンの比較に於いて、全長に亘って走査し
たが、ウェーハが装填される位置は決まっているので、
代表点を決定しておき、この代表点の明暗を比較するだ
けでもウェーハの有無は検知できる。
前記演算処理器１３で得られた、ウェーハ有無の検知結
果は、半導体製造設備の制御装置に入力され、ウェーハ
が無いと検知された箇所についてはステップして作業か
進行される等の処理がなされ、更に検知結果は表示器１
４により表示される。
尚、上記実施例ではスリット状平行光線をスクリーンに
投影し、スクリーンの明暗を受光センサで検知したか、
スクリーンを省略し、直接受光センサで明暗を検知する
様にしてもよい。
又、スリット光源は点光源を直線上に配置したちのてあ
ってもよい。FIG. 1 is a basic configuration diagram of an embodiment according to the present invention, FIG. 2 is a line diagram showing a detection pattern, and FIG. 3 is an explanatory diagram of a conventional system. 1 is a wafer cassette, 2 is a wafer, 7 is a slit light source, 9 is a light receiving sensor, 11 is a signal processor, 12 is a pattern setter, and 13 is an arithmetic processor. (see figure). In FIG. 2, a indicates a detection signal and b indicates a reference signal. In addition, in comparing the L pattern, the entire length was scanned, but since the position where the wafer is loaded is fixed,
The presence or absence of a wafer can be detected simply by determining a representative point and comparing the brightness of this representative point. The detection result of the presence or absence of a wafer obtained by the arithmetic processor 13 is input to the control device of the semiconductor manufacturing equipment, and processing is performed such as step-by-step operation at locations where no wafer is detected. , and the detection results are displayed on display 1.
4 is displayed. In the above embodiment, a slit-shaped parallel light beam is projected onto a screen, and the light/darkness of the screen is detected by a light receiving sensor.
The screen may be omitted and the light and darkness may be directly detected by the light receiving sensor. Further, the slit light source may be a point light source arranged in a straight line.
Claims (1)
もウェーハの収納高さ以上の幅を有し、ウェーハと平行
なスリット状平行光線を発するスリット光源を設け、該
スリット光源と対峙させ前記カセットの他側方に前記ス
リット状平行光線の幅以上の受光面長さを有する受光セ
ンサを設け、ウェーハがスリット状平行光線を遮ぎる様
光路を決定し、前記受光センサが投影されるウェーハの
陰影を検知する様構成したことを特徴とするウェーハ検
知装置。1) A slit light source is provided on one side of the cassette in which the wafers are loaded, and has a width at least equal to or greater than the storage height of the wafers, and emits a slit-shaped parallel light beam parallel to the wafers, and is placed opposite to the slit light source and installed in the cassette. A light receiving sensor having a light receiving surface length greater than the width of the slit-like parallel light beam is provided on the other side, and the light path is determined so that the wafer blocks the slit-like parallel light beam, and the light receiving sensor detects the shadow of the wafer on which it is projected. A wafer detection device characterized by being configured to detect a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2036915A JPH03239344A (en) | 1990-02-17 | 1990-02-17 | Wafer detection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2036915A JPH03239344A (en) | 1990-02-17 | 1990-02-17 | Wafer detection apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03239344A true JPH03239344A (en) | 1991-10-24 |
Family
ID=12483069
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2036915A Pending JPH03239344A (en) | 1990-02-17 | 1990-02-17 | Wafer detection apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03239344A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110205354A1 (en) * | 2008-10-01 | 2011-08-25 | Kawasaki Jukogyo Kabushiki Kaisha | Apparatus and method for detecting substrates |
| JP2011228739A (en) * | 2011-07-07 | 2011-11-10 | Hitachi Kokusai Electric Inc | Display method in semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| JP2012227539A (en) * | 2012-06-20 | 2012-11-15 | Hitachi Kokusai Electric Inc | Display method for wafer mounting status, display program, and display method in semiconductor manufacturing apparatus and semiconductor device |
| JP2013251577A (en) * | 2013-08-22 | 2013-12-12 | Hitachi Kokusai Electric Inc | Semiconductor device manufacturing method, semiconductor manufacturing apparatus, and display method and display program for semiconductor manufacturing apparatus |
-
1990
- 1990-02-17 JP JP2036915A patent/JPH03239344A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110205354A1 (en) * | 2008-10-01 | 2011-08-25 | Kawasaki Jukogyo Kabushiki Kaisha | Apparatus and method for detecting substrates |
| US9202732B2 (en) * | 2008-10-01 | 2015-12-01 | Kawasaki Jukogyo Kabushiki Kaisha | Apparatus and method for detecting substrates |
| JP2011228739A (en) * | 2011-07-07 | 2011-11-10 | Hitachi Kokusai Electric Inc | Display method in semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
| JP2012227539A (en) * | 2012-06-20 | 2012-11-15 | Hitachi Kokusai Electric Inc | Display method for wafer mounting status, display program, and display method in semiconductor manufacturing apparatus and semiconductor device |
| JP2013251577A (en) * | 2013-08-22 | 2013-12-12 | Hitachi Kokusai Electric Inc | Semiconductor device manufacturing method, semiconductor manufacturing apparatus, and display method and display program for semiconductor manufacturing apparatus |
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