JPH03237718A - Method and device for treating washing, etc. - Google Patents
Method and device for treating washing, etc.Info
- Publication number
- JPH03237718A JPH03237718A JP3247090A JP3247090A JPH03237718A JP H03237718 A JPH03237718 A JP H03237718A JP 3247090 A JP3247090 A JP 3247090A JP 3247090 A JP3247090 A JP 3247090A JP H03237718 A JPH03237718 A JP H03237718A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- flow
- treating
- processing
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005406 washing Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 title description 6
- 239000007788 liquid Substances 0.000 claims abstract description 46
- 238000004140 cleaning Methods 0.000 claims description 9
- 238000003672 processing method Methods 0.000 claims description 3
- 238000011282 treatment Methods 0.000 abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 16
- 235000012431 wafers Nutrition 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 8
- 239000000428 dust Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 abstract description 2
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 241000257465 Echinoidea Species 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000008400 supply water Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、半導体製造工程において半導体ウニ3゜
一ハ、ガラスマスク、基板その他を薬液で処理したり、
純水で洗浄したりする際に好適に用いられる処理方法及
び装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to the treatment of semiconductor urchins, glass masks, substrates, etc. with chemicals in the semiconductor manufacturing process.
The present invention relates to a treatment method and apparatus suitable for use in cleaning with pure water.
(従来の技術)
半導体ウェーハ等を薬液や純水で洗浄するため、現在は
オーバーフロー槽が広く用いられている。(Prior Art) Overflow tanks are currently widely used to clean semiconductor wafers and the like with chemical solutions and pure water.
例えば、第7図に示す洗浄槽は、ウェーハを収納したウ
ェーハキャリア(図示略)を槽(1)内に入れ、底部中
央の供給口(2)から純水等の処理液を槽内に供給し、
開口縁からオーバーフローさせ、ウェーハに付着したご
み等の異物を流出させるようにしている。ところが、上
記のようなオーバーフロー槽では、槽内における処理液
の流れは、中央部から上昇して側方へ向う流れの他に、
開口縁の内側で槽壁に沿って下方へ向い、さらに上記中
央部の流れに沿って上方へ向う渦巻き状に循環する流れ
が発生している。そのような渦巻き状の流れや不安定な
流れのために、槽内には流速のない停止水の部分や乱流
部分が生じる。そうすると、上記ウェーハから除去され
たごみ等は、上記のようにオ−ペー70−によって槽外
に流出せずに槽内に滞留し、洗浄効果を劣化させる原因
となる。このような現象は、槽の底部側方に供給口を設
けたり、底面からシャワー供給するようにしたり、カス
ケード槽にしたりしてもいずれの場合でも発生するもの
であり、洗浄等の処理において問題となっている。For example, in the cleaning tank shown in Fig. 7, a wafer carrier (not shown) containing wafers is placed in the tank (1), and a processing liquid such as pure water is supplied into the tank from the supply port (2) in the center of the bottom. death,
It overflows from the edge of the opening, allowing foreign matter such as dust attached to the wafer to flow out. However, in the above-mentioned overflow tank, the flow of the processing liquid in the tank is not only upward from the center and directed to the sides, but also
A spirally circulating flow is generated inside the opening edge, directed downward along the tank wall, and further directed upward along the flow in the center. Due to such a swirling flow or unstable flow, there are parts of stationary water with no flow velocity and parts of turbulent water in the tank. In this case, the dust and the like removed from the wafers do not flow out of the tank by the opae 70 as described above, but remain in the tank, causing a deterioration of the cleaning effect. This phenomenon occurs regardless of whether a supply port is installed on the side of the bottom of the tank, a shower is supplied from the bottom, or a cascade tank is installed, and it is a problem in cleaning and other processes. It becomes.
上記問題点は、エツチング工程その他薬液による処理の
場合にも生じる。The above-mentioned problems also occur in the etching process and other treatments using chemicals.
(発明の解決課題)
本発明の目的は、上記のように処理液をオーバーフロー
させて処理する方法において、槽内に供給される処理液
の流れを一定方向に規制し、該流れの中で洗浄等の処理
をできるようにした処理方法及びその装置を提供するこ
とである。(Problems to be Solved by the Invention) An object of the present invention is to regulate the flow of the processing liquid supplied into the tank in a certain direction in the above-mentioned method of processing by overflowing the processing liquid, and to wash the liquid in the flow. An object of the present invention is to provide a processing method and an apparatus for the same.
(課題解決の手段)
本発明によれば、上記目的は、オーバーフローしている
液面より下方に周囲の流れの影響をうけずに下方に向う
処理液の流れを形威し、該流れの中に被処理物を置き、
該処理液によって洗浄等の処理をすることを特徴とする
洗浄等の処理方法により遠戚することができる。(Means for Solving the Problem) According to the present invention, the above object is to form a downward flow of the processing liquid below the overflowing liquid level without being affected by the surrounding flow, and to Place the object to be processed in
A distant relative can be obtained by a processing method such as washing, which is characterized by carrying out processing such as washing using the processing liquid.
上記オーバーフロー槽内で下方に向う流れは、槽内に被
処理物を収納する処理槽を設は該処理槽の底面に微細な
流出孔を形成することにより作られ、また該処理槽の開
口縁をオーバー70−槽の開口縁より下方に設けること
によりオーバーフロー槽内に流入してくる処理液の流れ
の影響をなくした処理装置が得られる。The downward flow in the overflow tank is created by providing a processing tank in which the material to be processed is stored and by forming fine outflow holes in the bottom of the processing tank, and by forming fine outflow holes at the bottom of the processing tank, and by forming fine outflow holes at the bottom of the processing tank. By providing the overflow tank below the opening edge of the overflow tank, a processing apparatus can be obtained in which the influence of the flow of the processing liquid flowing into the overflow tank is eliminated.
(作用)
オーバー70−槽に供給される純水等の処理液は、槽内
を上方に向って流れ、開口縁からオー−く一フローする
が、処理槽内には直接流入しないので、その流れは処理
槽内の処理液の流れには影響を与えない。そして、該処
理槽の底面の流出孔から処理液を流出させることにより
オーバー70−槽の液面と処理槽の開口縁の間に供給さ
れてくる処理液は下方に向って一様に流れ、該処理槽内
に置かれた半導体ウェーハ等を洗浄等する。除去された
ごみ等は該下向きの処理液の流れによって流出孔から排
除され、処理槽内に残留することはないO
(実施例)
以下半導体ウェーへの洗浄を例に、実施例を説明する。(Function) The processing liquid such as pure water supplied to the over 70-tank flows upward in the tank and flows from the opening edge, but it does not flow directly into the processing tank. The flow does not affect the flow of processing liquid in the processing tank. By causing the processing liquid to flow out from the outflow hole at the bottom of the processing tank, the processing liquid supplied between the liquid level of the over 70-tank and the opening edge of the processing tank uniformly flows downward, Semiconductor wafers and the like placed in the processing tank are cleaned, etc. The removed dust and the like are removed from the outflow hole by the downward flow of the processing liquid and do not remain in the processing tank.Example: An example will be described below using cleaning of a semiconductor wafer as an example.
図において、オーバーフロー槽QQは、底部に純水、薬
液等の処理液の供給口αυ・・・を有する。該供給口α
υは、上記槽QQ内にほぼ均一に処理液を供給するよう
に設けるとよく、例えば第2図に示すように槽壁の各辺
のほぼ中央に7箇所、若しくは複数箇所設けたり、各辺
に沿って供給パイプを配置し、該パイプに多数の孔會設
けてシャワー状に供給するようにしてもよい(図示時)
。上記供給口(6)からの処理液の流れを整流するよう
上記槽QOには、多孔板四が設けられている。上記オー
バー70−槽QOの底部には、排出口0・・・を設けで
ある。In the figure, the overflow tank QQ has supply ports αυ for processing liquids such as pure water and chemicals at the bottom. The supply port α
It is preferable to provide υ so as to supply the processing liquid almost uniformly into the tank QQ, for example, as shown in FIG. A supply pipe may be arranged along the pipe, and a large number of holes may be provided in the pipe to supply water in a shower-like manner (as shown).
. A perforated plate 4 is provided in the tank QO to rectify the flow of the processing liquid from the supply port (6). A discharge port 0 is provided at the bottom of the over tank QO.
該排出口0にはエフシリンダα4で操作される排出弁Q
4) t−設けてあり、好ましくは槽内の処理液1−−
気に排水できるよう底部に複数箇所1図においては隅部
にψ箇所設けである。上記オーIく−フロー槽OQの開
口縁(ロ)は、外側若しくは内側に傾斜する薄刃に形成
するとよい。At the discharge port 0, there is a discharge valve Q operated by F cylinder α4.
4) t-Processing liquid 1-- provided, preferably in the tank
There are multiple locations on the bottom and ψ locations in the corners in Figure 1 to allow for drainage. The opening edge (b) of the flow tank OQ is preferably formed into a thin blade that slopes outward or inward.
上記オーバー70−槽QQの内方には、半導体ウェーハ
(2)・・・等を起立状態で収納したウェーハキャリア
α7)を1個若しくは複数個並列してセットできるよう
処理槽(ト)を形成しである。半導体ウェーハ以外の被
処理物に適用する際は、当該被処理物に適応するような
適宜の形状に処理槽(ト)を形威することができる。該
処理槽(ロ)の側壁は、オーバー70−槽に供給された
処理液が直接流入しないように形成されているが、底部
全面には、処理槽内の処理液を安定状態で排出できるよ
う微細な流出孔α+1・・・を設けてあり、また開口縁
−は、処理液が処理槽(ロ)内に流入するよう上記オー
I<−70−槽QOの開口縁(至)より下方に存するよ
うに形威しである。A processing tank (G) is formed inside the above-mentioned over 70-tank QQ so that one or more wafer carriers α7) storing semiconductor wafers (2) etc. in an upright state can be set in parallel. It is. When the present invention is applied to objects to be processed other than semiconductor wafers, the processing tank can be shaped into an appropriate shape to suit the object to be processed. The side wall of the processing tank (b) is formed so that the processing liquid supplied to the over 70-tank does not directly flow into it, but there is a wall on the entire bottom surface so that the processing liquid in the processing tank can be discharged in a stable state. Fine outflow holes α+1... are provided, and the opening edge - is located below the opening edge (to) of the tank QO so that the processing liquid flows into the processing tank (B). It is a form of formality as it is.
該開口縁−とオーバーフロー槽の液面allの間の間隔
(高さ)は、上記オーバーフロー槽QQに供給された処
理液の流れが、乱流や渦を生じないよう安定状態で処理
槽(ト)内に入り込むよう上記供給口(ロ)からの処理
液の供給量や上記流出孔−・・・からの排出量を考慮し
て定められる。なお、上記処理槽(ト)の開口縁(ホ)
も、外側若しくは内側に傾斜する薄刃に形成するとよい
。The distance (height) between the opening edge and the liquid level all of the overflow tank is such that the flow of the processing liquid supplied to the overflow tank QQ is maintained in a stable state so that turbulence and eddies do not occur. ) is determined by taking into account the amount of processing liquid supplied from the supply port (B) and the amount discharged from the outflow hole. In addition, the opening edge (E) of the above treatment tank (G)
It is also preferable to form a thin blade that slopes outward or inward.
上記流出孔Q9・・・は、上記処理槽の大きさ、処理液
、被処理物の種類、処理の内容、発生するごみ等の大き
さその他の条件により適宜の大きさ、密度に作られ、所
望によりシャッター等を設けて開口面積を調整するよう
にしてもよい。また、流出孔α9の形状は流線の乱れが
生じないよう円形が好ましく、またばり等の障害物が存
在しないように形成される。そのような目的のため、流
出孔a1を形成する底板@は、石英で作られているが、
フッ素樹脂(テフロン)、塩化ビニル樹脂等で作ること
もできる。上記流出孔mの入口部は、入口損失を少くす
るように傾斜して作り、第ψ図のように逆円錐形の案内
面@を形威したり、第1図のように略V字形の溝(ハ)
、(ホ)を縦横に形威してその交叉部分に流出孔αIを
設けるようにしたりできる。また傾斜面は、図に示すも
のでは直線状に形成しであるが、弧状にわん曲したベル
マウス状に形成することもできる。図において、上記底
板@は、処理槽(ト)の底部に固着しであるが、掃除等
のため着脱自在に設けたり、クイックドロ一方式にスル
ヨうエアシリンダ等で周囲を保持し、必要なとき一気に
下方へ移動させるようにしてもよい。なお、底板@を移
動可能に設けたときは、処理槽内に。The outflow hole Q9 is made to have an appropriate size and density depending on the size of the treatment tank, the treatment liquid, the type of object to be treated, the contents of treatment, the size of generated garbage, etc., and other conditions. If desired, a shutter or the like may be provided to adjust the opening area. Further, the shape of the outflow hole α9 is preferably circular so as not to cause disturbance of the streamlines, and is formed so that there are no obstacles such as burrs. For such purpose, the bottom plate @ forming the outflow hole a1 is made of quartz,
It can also be made from fluororesin (Teflon), vinyl chloride resin, etc. The inlet part of the above-mentioned outflow hole m is made to be inclined to reduce the inlet loss, and may be formed into an inverted conical guide surface @ as shown in Fig. Groove (c)
, (E) can be shaped vertically and horizontally, and an outflow hole αI can be provided at the intersection. Further, although the inclined surface is formed in a straight line in the figure, it can also be formed in a bellmouth shape curved in an arc. In the figure, the bottom plate is fixed to the bottom of the processing tank (G), but it can be detached for cleaning, etc., or the surrounding area can be held with an air cylinder, etc. that can be used for quick draw, etc., as needed. It may also be possible to move it downward all at once. In addition, when the bottom plate is provided so that it can be moved, it can be placed inside the processing tank.
上記ウェーハキャリアα力の載置部を形成しておく。A placement section for the wafer carrier α force is formed in advance.
この載置部は、処理液の流れを乱さないよう適宜の形状
に作られる。This mounting portion is formed into an appropriate shape so as not to disturb the flow of the processing liquid.
而して、上記オーバーフロー槽Oqに、純水、薬液等の
処理液を、全排水量よりも常に多い状態で供給し、流量
、流速全排出弁側でコントロールするようにすると、上
記処理槽(ト)内には、該処理槽の開口縁翰とオーバー
フロー摺曲の液面Qυの間に存するほぼ停止水に近い状
態の処理液を供給することができ、底部全面に設けた流
出孔Q9・・・を通って下方へ流出する下向の流れが得
られる。該下向の流れによって被処理物を洗浄等の処理
することができ、ごみ等は下向の流れとともに流出孔Q
9・・・から排出され、処理槽内に滞留しない。上記半
導体ウェーハ等は、前工程で充分に洗浄等されていnば
、そのまま上記オーパーフローしていルffαQに入れ
ることもできる。若し・汚れているようなときは、上記
オーバー70−槽<tC)内の処理液を抜いた状態で処
理槽(財)内に被処理物を入れ、処理槽の上部側方に設
けたシャワー(ホ)・・・により被処理物の表面に純水
等の処理液をシャワーし下方から汚水を流出させながら
処理槽内に処理液金溜め、−定量溜ったら外側のオーバ
ーフロー摺曲に純水等の処理液を供給するようにすれば
よい(第4図)。Therefore, if a treatment liquid such as pure water or a chemical solution is always supplied to the overflow tank Oq in a state that is larger than the total drainage volume, and the flow rate and flow rate are controlled by the total discharge valve side, the treatment tank (to ) can supply the treatment liquid in a state close to that of stopped water existing between the opening edge of the treatment tank and the liquid level Qυ of the overflow bend, and the outflow hole Q9 provided on the entire bottom surface allows the treatment liquid to be supplied in a state close to that of stopped water, which exists between the opening edge of the treatment tank and the liquid level Qυ of the overflow bend. A downward flow is obtained that flows downward through the The object to be processed can be washed or otherwise processed by the downward flow, and dirt, etc. can be removed through the outlet hole Q along with the downward flow.
It is discharged from 9... and does not remain in the processing tank. If the semiconductor wafers and the like have been sufficiently cleaned in the previous process, they can be put into the overflow chamber ffαQ as they are. If it is dirty, place the object to be treated in the treatment tank (goods) with the treatment liquid in the above-mentioned over 70-tank<tC) drained, and place it on the upper side of the treatment tank. A shower (e) showers a treatment liquid such as pure water onto the surface of the object to be treated, and while draining the waste water from below, the treatment liquid is collected in the treatment tank, and when a certain amount has accumulated, the pure water is poured into the overflow bend on the outside. A treatment liquid such as water may be supplied (FIG. 4).
また、流出孔α9・・・からの排出ヲ調整する手段とし
て種々の装@を用いることができる。例えば、第7図に
示す装置は、処理槽部の下方に排出路(ホ)を形威し、
該排出路(ホ)の底部g!jを傾斜させ、該傾斜部分の
底に排出孔−を有する排出パイプ■を設け、該排出ペイ
プ(1)内に挿通孔01)を形成した棒状の回転弁c3
7Jを挿入し、該回転弁を回転して排出量を調整するよ
うにしたものである。この場合、該排出孔−は、上記流
出孔a9・・・より上方の流れに影響を与えないよう離
れた位置に設けである。Furthermore, various devices can be used as a means for adjusting the discharge from the outflow holes α9. For example, the device shown in FIG. 7 has a discharge path (E) below the processing tank,
The bottom g of the discharge channel (E)! A rod-shaped rotary valve c3 in which a discharge pipe (1) having a discharge hole is provided at the bottom of the inclined part, and an insertion hole (01) is formed in the discharge pipe (1).
7J is inserted and the rotary valve is rotated to adjust the discharge amount. In this case, the discharge hole is provided at a remote position so as not to affect the flow above the outflow hole a9.
第r図に示す実施例は、上記排出路(イ)の底部に、歯
車等金介しモーター、油圧シリンダー等の駆動手段(図
示略)で揺動させる開閉板(至)を枢着(ト)したもの
で、該開閉板の開き程度により排出貴命調整することが
できる。In the embodiment shown in FIG. Therefore, the discharge life can be adjusted by adjusting the degree of opening of the opening/closing plate.
(発明の効果)
本発明は上記のように構成され、処理槽内に、乱れ、渦
、停止水等の存在しない一様に下方に向う処理液の流れ
を作り、該下向の流れの中で被処理物を洗浄処理等する
ようにしたから、微細なごみ等も排出できるし、処理槽
内全体でむらなく処理でき、安定した処理効果合奏する
ことができる。(Effects of the Invention) The present invention is configured as described above, and creates a uniform downward flow of the processing liquid without turbulence, eddies, stopped water, etc. in the processing tank, and in the downward flow. Since the object to be treated is washed, etc., fine dust can be discharged, the entire treatment tank can be treated evenly, and a stable treatment effect can be achieved.
図面は本発明の実施例音用し、第1図は断面図、第2図
は整流用多孔板を除去した状態の平面図、第3図は処理
槽の底板の一部拡大断面図、第φ図及び第1図は底板の
一部の斜視図、第6図〜第g図は変形例の各断面図、第
り図は従来例の説明図である。
10・・・オーバー70−槽、15・・・開口縁1
8・・・処理槽、
9・・・流出孔
特
許
出
願
人
株式会社塩谷製作所
第6図
第
図
第7
図The drawings show examples of the present invention; FIG. 1 is a sectional view, FIG. 2 is a plan view with the perforated rectifying plate removed, FIG. 3 is a partially enlarged sectional view of the bottom plate of the processing tank, and FIG. Fig. φ and Fig. 1 are perspective views of a part of the bottom plate, Figs. 6 to g are sectional views of modified examples, and Fig. 1 is an explanatory view of a conventional example. 10... Over 70-tank, 15... Opening edge 1 8... Treatment tank, 9... Outlet hole Patent applicant Shioya Seisakusho Co., Ltd. Figure 6 Figure 7
Claims (1)
の流れを形成し、該流れの中に被処理物を置き、該処理
液により処理することを特徴とする洗浄等の処理方法。 2、処理液が流入するオーバーフロー槽内に被処理物を
収納する処理槽を設け、該処理槽の開口縁を上記オーバ
ーフロー槽の開口縁より下方に存するように形成し、か
つ該処理槽の底部に微細な流出孔を多数設けたことを特
徴とする洗浄等の処理装置。 3、上記処理槽の上部側方にシャワーを設けたことを特
徴とする請求項2に記載の洗浄等の処理装置。[Claims] 1. Cleaning, etc., characterized by forming a flow of processing liquid downward from the overflowing liquid level, placing an object to be processed in the flow, and treating it with the processing liquid. processing method. 2. A processing tank for storing objects to be processed is provided in an overflow tank into which the processing liquid flows, and the opening edge of the processing tank is formed to be below the opening edge of the overflow tank, and the bottom of the processing tank is A processing device for cleaning, etc., characterized by having a large number of fine outflow holes. 3. The processing apparatus for cleaning and the like according to claim 2, characterized in that a shower is provided on the upper side of the processing tank.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3247090A JPH03237718A (en) | 1990-02-15 | 1990-02-15 | Method and device for treating washing, etc. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3247090A JPH03237718A (en) | 1990-02-15 | 1990-02-15 | Method and device for treating washing, etc. |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03237718A true JPH03237718A (en) | 1991-10-23 |
Family
ID=12359861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3247090A Pending JPH03237718A (en) | 1990-02-15 | 1990-02-15 | Method and device for treating washing, etc. |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03237718A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115080A (en) * | 1993-10-19 | 1995-05-02 | Dan Kagaku:Kk | Cleaning tank |
-
1990
- 1990-02-15 JP JP3247090A patent/JPH03237718A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07115080A (en) * | 1993-10-19 | 1995-05-02 | Dan Kagaku:Kk | Cleaning tank |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2001102351A (en) | Rinsing tank equipped with ultra-clean liquid | |
JPH03237718A (en) | Method and device for treating washing, etc. | |
JP3538470B2 (en) | Downward rectification type immersion cleaning device | |
JP6480461B2 (en) | Solid product dispenser | |
JP6231249B2 (en) | Substrate processing equipment | |
JPH0499025A (en) | Water rinser | |
JPS63110731A (en) | Semiconductor substrate processor | |
JPH05166793A (en) | Dipping type substrate treatment apparatus | |
JP3386892B2 (en) | Wash tank | |
JPH0437131A (en) | Pure water washing vessel for semiconductor wafer and washing thereof | |
JPH05166787A (en) | Cleaning/rinsing vessel for semiconductor wafer | |
JPH0722371A (en) | Wet cleaning device | |
JPH0448629A (en) | Liquid processor for semiconductor wafer | |
JP3642819B2 (en) | Rectification method of descending rectification type immersion cleaning tank | |
JP2004130284A (en) | High-speed filter | |
JPH09220544A (en) | Water flowing type cleaning apparatus | |
JP2000189728A (en) | Substrate treating device | |
JPH0831787A (en) | Cleaning container | |
JPH0538486A (en) | Washing equipment | |
JPS60113433A (en) | Washing equipment of thin plate | |
JP2000093906A (en) | Apparatus for producing semiconductor | |
JPH10189521A (en) | Apparatus and method for cleaning of substrate | |
JPH1050652A (en) | Down-flow rectifying type cleaning tank | |
JPH05299404A (en) | Washer for platelike body | |
SU1089674A1 (en) | Method and apparatus for cleansing semiconductor wafers |