JPH0322430A - Formation of flattened insulating film - Google Patents
Formation of flattened insulating filmInfo
- Publication number
- JPH0322430A JPH0322430A JP15584889A JP15584889A JPH0322430A JP H0322430 A JPH0322430 A JP H0322430A JP 15584889 A JP15584889 A JP 15584889A JP 15584889 A JP15584889 A JP 15584889A JP H0322430 A JPH0322430 A JP H0322430A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- sog
- coated film
- film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000011800 void material Substances 0.000 abstract description 3
- 229920001187 thermosetting polymer Polymers 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000001029 thermal curing Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体装置製造工程における平坦化絶縁膜の
形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming a planarized insulating film in a semiconductor device manufacturing process.
本発明は、段差を有する半導体基板上に形或されたスピ
ンオンガラス（以下、ＳＯＧという）溶液塗布膜に、マ
イクロ波照射を施して熱硬化することにより、クランク
やボイドのない信頼性のあ〔従来の技術〕
ＬＳＩ等の半導体装置の高集積度化に伴い、多層配線の
重要性が高まってきた。とりわけ、激しい段差を有する
層間絶縁膜や下層配線等の上に形成する平坦化絶縁膜は
、更にこの上に上層配線を形成する関係上、可及的に平
坦な表面とすることが要求される。これは上層配線のス
テップカバレッジを良好なものとし、エレクトロマイグ
レーションやストレスマイグレーション等の心配のない
信頼性に優れた多層配線を形或するためである。The present invention provides a reliable film with no cranks or voids by thermally curing a spin-on glass (hereinafter referred to as SOG) solution coated film formed on a semiconductor substrate having steps by applying microwave irradiation. 2. Description of the Related Art As semiconductor devices such as LSIs become highly integrated, the importance of multilayer wiring has increased. In particular, a flattening insulating film formed on an interlayer insulating film or a lower layer wiring having a severe step difference is required to have a surface as flat as possible because the upper layer wiring is further formed on top of the flattening insulating film. . This is to improve the step coverage of the upper layer wiring and to form a highly reliable multilayer wiring free from electromigration, stress migration, and the like.
従来より平坦化絶縁膜を形或する方法としては、ＳＯＧ
溶液塗布膜による方法が知られている。これを従来例に
よる平坦化絶縁膜形或方法の概略工程断面図である第３
図（ａ）〜（Ｃ）に基づき説明する。A conventional method for forming a planarized insulating film is SOG.
A method using a solution coating film is known. FIG.
This will be explained based on FIGS. (a) to (C).
第３図（ａ）において、シリコン半導体等の基板１上に
は、例えば層間絶縁膜や下層配線が形成されており、こ
れらにより段差凸部２と、アスペクト比の大きな段差凹
部３とが形成されている。ここ？同図（ｂ）のごとく、
ＳＯＧ溶液をスピンコート法により全面に塗布し、ＳＯ
Ｇ溶液塗布膜４を形成する。ＳＯＧ溶液塗布膜４は段差
四部３には厚く、段差凸部には薄く形成される。ＳＯＧ
溶液は周知の通り、例えばシラノール（Ｓｔ （Ｏｌｌ
） ４）等のケイ素化合物を主体とし、これをアルコー
ル等の有機溶媒に溶解したものである。すなわち、ＳＯ
Ｇ溶液塗布膜４を例えば数百゜Ｃから９００″Ｃ程度に
まで加熱し、有機溶媒を蒸発させ、ケイ素化合物の脱水
縮重合反応を進行させ熱硬化させることにより、第３図
（Ｃ）のごとく無機質の酸化ケイ素（ＳｉＯ■）を主体
とする平坦化絶縁膜５が形成されるのである。In FIG. 3(a), for example, an interlayer insulating film and lower wiring are formed on a substrate 1 such as a silicon semiconductor, and these form a step convex portion 2 and a step recess 3 having a large aspect ratio. ing. here? As shown in figure (b),
Apply SOG solution to the entire surface by spin coating method, and
A G solution coating film 4 is formed. The SOG solution coating film 4 is formed thickly on the four step portions 3 and thinly on the step convex portions. SOG
As is well known, the solution is, for example, silanol (St (Oll
) 4) etc., which is dissolved in an organic solvent such as alcohol. That is, S.O.
The G solution coating film 4 is heated, for example, from several hundred degrees Celsius to about 900''C, the organic solvent is evaporated, the dehydration condensation reaction of the silicon compound is progressed, and the film is thermally cured, as shown in FIG. 3(C). Thus, a flattening insulating film 5 mainly made of inorganic silicon oxide (SiO2) is formed.
従来法によれば、ＳＯＧ溶液塗布膜４を加熱するに際し
ては、抵抗加熱による電気炉を用いたり、あるいは炭酸
ガスレーザ光の照射による方法が用いられてきた（例え
ば、特開昭５７−６９７４８号公報参照）。According to conventional methods, when heating the SOG solution coated film 4, an electric furnace using resistance heating or a method using carbon dioxide laser light irradiation has been used (for example, as disclosed in Japanese Patent Laid-Open No. 57-69748). reference).
前記した従来の方法によれば、ＳＯＧ溶液塗布膜４はそ
の表面から加熱され、有機溶媒の蒸発ならびにケイ素化
合物の脱水縮重合反応による熱硬化は表面から進行する
。このため、表面にまずＳｉＯｚを主体とする皮膜が形
成され、次いで段差凹部３の内部の熱硬化が進行する。According to the conventional method described above, the SOG solution coating film 4 is heated from the surface thereof, and thermal curing by evaporation of the organic solvent and dehydration condensation reaction of the silicon compound proceeds from the surface. Therefore, a film mainly composed of SiOz is first formed on the surface, and then thermal hardening inside the step recess 3 progresses.
この熱硬化は体積減少を供なう反応であるので、第３図
（Ｃ）に示すように段差四部３の平坦化絶縁膜５にクラ
ック６やボイド７が発生する場合があり、半導体装置の
信頼性低下の原因となっていた。Since this thermal curing is a reaction that causes volume reduction, cracks 6 and voids 7 may occur in the flattened insulating film 5 at the four step portions 3, as shown in FIG. This caused a decrease in reliability.
本発明による平坦化絶縁膜形或法は、ＳＯＣ溶液塗布膜
の熱硬化手段として、マイクロ波照射を施すことを特徴
とする。ここでいうマイクロ波とは、ＩＧＨｚ ＝１０
０ＧＨｚの範囲より選択される電磁波である。この電磁
波の照射によりＳＯＧ溶液塗布膜を数百゜Ｃ〜９００゜
Ｃ程度に加熱して熱硬化し、平坦化絶縁膜を形成するの
である。The flattening insulating film forming method according to the present invention is characterized in that microwave irradiation is applied as a means for thermally curing the SOC solution coating film. The microwave referred to here is IGHz = 10
This is an electromagnetic wave selected from the 0 GHz range. By irradiating this electromagnetic wave, the SOG solution coating film is heated to about several hundred degrees Celsius to about 900 degrees Celsius to be thermally cured, thereby forming a flattened insulating film.
マイクロ波は、水酸基（一〇■）等双極性の結合をもつ
ＳＯＧ溶液等のごとき被照射物体にのみ吸収され、この
ときに発生する電磁気的なエネルギー損失を熱源として
被照射物体を加熱する。このため、特に熱の逃げにくい
段差凹部の内部のＳＯＧ溶液塗布膜から温度が上昇し、
熱硬化が進行する。Microwaves are absorbed only by objects to be irradiated, such as SOG solutions, which have dipolar bonds such as hydroxyl groups (10■), and the electromagnetic energy loss generated at this time is used as a heat source to heat the object to be irradiated. For this reason, the temperature rises from the SOG solution coating film inside the stepped recesses, where heat is particularly difficult to escape.
Heat curing progresses.
すなわち、ＳＯＧ溶液塗布膜の体積減少は段差凹部の内
部から進行し、この後に表面に皮膜が形成されることと
なる。この結果、従来例のようにＳ○Ｇ塗布膜の表面か
ら優先的に熱硬化して皮膜を形成してしまい、この結果
としてクランクやボイドが発生する現象を回避すること
が可能となる。That is, the volume reduction of the SOG solution coating film proceeds from the inside of the stepped recess, and thereafter a film is formed on the surface. As a result, it is possible to avoid a phenomenon in which a film is preferentially thermally cured from the surface of the S○G coating film as in the conventional example, and as a result, cranks and voids occur.
以下、本発明の実施例について図面を参照しながら説明
する。Embodiments of the present invention will be described below with reference to the drawings.
第１図は、本発明による平坦化絶縁膜形或方法に供する
装置の概略断面図である。同図において、ＳＯＧ溶液塗
布膜を形成したシリコン半導体等の基板１を、電磁気的
なエネルギー損失の小さな材質からなる支持台１１に載
置し、マイクロ波を反射する材質よりなるチャンバ１２
内へ設置する。マグネトロン１４により発生したマイク
ロ波ｌ５は、導波管１３によりチャンバ１２内へ導入さ
れるように構威する。FIG. 1 is a schematic cross-sectional view of an apparatus for use in a method of planarizing an insulating film according to the present invention. In the figure, a substrate 1 such as a silicon semiconductor on which a SOG solution coating film is formed is placed on a support 11 made of a material with low electromagnetic energy loss, and a chamber 12 made of a material that reflects microwaves.
Install inside. The microwave 15 generated by the magnetron 14 is introduced into the chamber 12 through the waveguide 13.
次にこの装置を用いて本発明による平坦化絶縁膜を形成
する方法を説明する。第２図（ａ）〜（Ｃ）は本発明に
よる平坦化絶縁膜形或方法の概略工程断面図である。同
図（ａ）及び（ロ）の工程は、前記従来の技術の説明に
おける第３図（ａ）および（ｂ）の工程と同一であるの
で、説明を省略する。次にＳＯＧ溶液塗布膜４を形成し
た基板１を、前記したチャンバ１２内の支持台１１に載
置する。マグネトロン１４により、例えば２．４５ＧＨ
ｚのマイクロ波１５を発生させ、導波管１３によりチャ
ンバｌ２内に導入し、基板１に向け照射する。Next, a method for forming a planarized insulating film according to the present invention using this apparatus will be described. FIGS. 2(a) to 2(c) are schematic process cross-sectional views of a planarizing insulating film type or method according to the present invention. The steps shown in FIGS. 3(a) and 3(b) are the same as the steps shown in FIGS. 3(a) and 3(b) in the description of the prior art, so their explanation will be omitted. Next, the substrate 1 on which the SOG solution coating film 4 has been formed is placed on the support table 11 in the chamber 12 described above. For example, 2.45GH by magnetron 14
z microwave 15 is generated, introduced into the chamber l2 through the waveguide 13, and irradiated toward the substrate 1.
このマイクロ波照射により、ＳＯＧ溶液塗布膜４のみが
加熱される。しかも段差凹部３のＳＯＧ溶液塗布膜４内
部から優先的に昇温し熱硬化が進行する。最終的には目
的に応じて数百゜Ｃ〜９００゜Ｃにまで加熱し、第２図
（Ｃ）に示されるようなクラックやボイドの発生のない
信頼性の高い平坦化絶縁膜５が形成されるのである。By this microwave irradiation, only the SOG solution coating film 4 is heated. Moreover, the temperature rises preferentially from inside the SOG solution coating film 4 in the step recess 3, and thermal curing progresses. Finally, it is heated to several hundred degrees Celsius to 900 degrees Celsius depending on the purpose, and a highly reliable flattened insulating film 5 without cracks or voids as shown in FIG. 2(C) is formed. It will be done.
なお、本発明においてマイクロ波照射を施す場合は、目
的に応してチャンハ１２内を窒素（Ｎ２）やアルゴン（
Ａｒ）等の不活性気体雰囲としてもよく、また真空ポン
プにより排気して減圧雰囲気とすることも可能である。In addition, when performing microwave irradiation in the present invention, nitrogen (N2) or argon (
The atmosphere may be an inert gas atmosphere such as Ar), or it may be evacuated using a vacuum pump to create a reduced pressure atmosphere.
本実施例においては、平坦化絶縁膜の形成方法として、
ＳＯＧ溶液塗布膜の熱硬化による方法を例にとったが、
本発明はテトラエチルオルソシリケイト（ＴＥＯＳ）−
ＣＶＤ法によるＳｉＯｚ絶縁膜のように、堆積直後には
膜中に一〇Ｈ基が残留しやすい絶縁膜に対しても適用す
ることができ、残留−０１１基のない信頼性の高い平坦
化絶縁膜を形成することが可能である。In this example, the method for forming the planarization insulating film is as follows:
We took as an example the method of thermal curing of the SOG solution coating film,
The present invention is based on tetraethylorthosilicate (TEOS)-
It can be applied to insulating films in which 10H groups tend to remain in the film immediately after deposition, such as SiOz insulating films produced by CVD, and provides highly reliable planarized insulation without residual -011 groups. It is possible to form a film.
本発明によれば、ＳＯＧ溶液塗布膜は熱の逃げにくい段
差凹部の塗布膜内部から優先的に加熱され、熱硬化され
る。このため、従来法のようにＳＯＧ塗布膜表面が先に
熱硬化してしまい、この結果として形成される平坦化絶
縁膜にクラックやボイドが・発生するという問題を回避
することができ、信頼性の高い平坦化絶縁膜を形成する
ことが可能となる。According to the present invention, the SOG solution coating film is heated preferentially from inside the coating film in the stepped recesses where heat is difficult to escape, and is thermally cured. For this reason, it is possible to avoid the problem of the SOG coating film surface being thermally hardened first, resulting in cracks and voids occurring in the flattened insulating film formed as in the conventional method. It becomes possible to form a planarized insulating film with a high degree of flatness.
第ｌ図は本発明による平坦化絶縁膜形成方法に供する装
置の概略断面図、第２図は本発明による平坦化絶縁膜形
成方法の概略工程断面図、そして第３図は従来例による
平坦化絶縁膜形或方法の概略工程断面図である。
ｉ−−−−−一一一〜一基板
２ −−−−−−−−−−−一段差凸部３ −−−−−
−−−−−−段差凹部
４ ．−−−−−一一一一一−− Ｓ Ｏ Ｇ溶液塗布
膜５ −−−−−−−−−−−−−一平坦化絶縁膜６−
−−−−クラック
７−−−−−−一一−−−−−−−ボイド１３
ｌｔ−−一一
１５
導波管
マグネトロン
マイクロ波FIG. 1 is a schematic cross-sectional view of an apparatus used in the method for forming a planarized insulating film according to the present invention, FIG. 2 is a schematic cross-sectional view of the process for forming a planarized insulating film according to the present invention, and FIG. FIG. 3 is a schematic process cross-sectional view of an insulating film type and method. i------111~1 substrate 2---------One level difference convex part 3------
--------Step recess 4. -------11111-- S O G solution coating film 5 -----------1 Flattening insulating film 6-
---Crack 7--------11--------Void 13 lt--1115 Waveguide magnetron microwave
Claims (1)
イクロ波照射を施すことにより熱硬化することを特徴と
する平坦化絶縁膜形成方法。A method for forming a flattened insulating film, which comprises thermally curing a spin-on glass solution coating film formed on a substrate by applying microwave irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15584889A JPH0322430A (en) | 1989-06-20 | 1989-06-20 | Formation of flattened insulating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15584889A JPH0322430A (en) | 1989-06-20 | 1989-06-20 | Formation of flattened insulating film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0322430A true JPH0322430A (en) | 1991-01-30 |
Family
ID=15614825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15584889A Pending JPH0322430A (en) | 1989-06-20 | 1989-06-20 | Formation of flattened insulating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0322430A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384390B1 (en) | 1997-12-31 | 2002-05-07 | Samsung Electronics Co., Ltd. | Apparatus for forming thin film using microwave and method therefor |
| WO2002082526A1 (en) * | 2001-04-03 | 2002-10-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and its manufacturing method |
| JP2010129790A (en) * | 2008-11-27 | 2010-06-10 | Tokyo Electron Ltd | Deposition method |
-
1989
- 1989-06-20 JP JP15584889A patent/JPH0322430A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6384390B1 (en) | 1997-12-31 | 2002-05-07 | Samsung Electronics Co., Ltd. | Apparatus for forming thin film using microwave and method therefor |
| WO2002082526A1 (en) * | 2001-04-03 | 2002-10-17 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and its manufacturing method |
| US6872989B2 (en) | 2001-04-03 | 2005-03-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| US7022530B2 (en) | 2001-04-03 | 2006-04-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| US7170110B2 (en) | 2001-04-03 | 2007-01-30 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
| JP2010129790A (en) * | 2008-11-27 | 2010-06-10 | Tokyo Electron Ltd | Deposition method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3802662B2 (en) | Method for manufacturing insulating film of semiconductor device using SOG | |
| US6132814A (en) | Method for curing spin-on-glass film utilizing electron beam radiation | |
| KR101139175B1 (en) | Process for producing semiconductor device, semiconductor device, semiconductor production apparatus, and storage medium | |
| KR20060065493A (en) | Semiconductor device fabrication method | |
| JPS59154029A (en) | Formation of insulating film | |
| US5290399A (en) | Surface planarizing methods for integrated circuit devices | |
| KR20010031586A (en) | Method of plasma processing | |
| JPH0322430A (en) | Formation of flattened insulating film | |
| US5515985A (en) | Method of forming fine copper conductor pattern | |
| EP0794569A2 (en) | Amorphous carbon film, formation process thereof, and semiconductor device making use of the film | |
| JPH08236520A (en) | Formation of insulation layer of semiconductor device | |
| TW201545175A (en) | Method for removing back-filled pore-filling agent from a cured porous dielectric | |
| JP4032447B2 (en) | Manufacturing method of semiconductor device | |
| JP3530165B2 (en) | Method for manufacturing semiconductor device | |
| JP3210601B2 (en) | Semiconductor device and manufacturing method thereof | |
| JPH08306681A (en) | Formation of flattened coat insulating film | |
| JP2585439B2 (en) | Method for manufacturing semiconductor device | |
| JPH09205086A (en) | Method and system for fabricating semiconductor device | |
| JPH0226053A (en) | Manufacture of semiconductor device | |
| JP2557916B2 (en) | Method for manufacturing semiconductor device | |
| JPH08111458A (en) | Semiconductor device and fabrication thereof | |
| JPH11251312A (en) | Manufacture of semiconductor device | |
| JPH01241135A (en) | Manufacture of semiconductor device | |
| JPS6377139A (en) | Formation of insulating film | |
| JPH11274296A (en) | Multilayer wiring structure and method of forming the same |