JPH03212938A - Forming method of silicon nitride film - Google Patents
Forming method of silicon nitride filmInfo
- Publication number
- JPH03212938A JPH03212938A JP872990A JP872990A JPH03212938A JP H03212938 A JPH03212938 A JP H03212938A JP 872990 A JP872990 A JP 872990A JP 872990 A JP872990 A JP 872990A JP H03212938 A JPH03212938 A JP H03212938A
- Authority
- JP
- Japan
- Prior art keywords
- film
- nitrogen
- gas
- substrate
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 150000002831 nitrogen free-radicals Chemical class 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract description 7
- 239000007789 gas Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 229910052682 stishovite Inorganic materials 0.000 abstract description 6
- 229910052905 tridymite Inorganic materials 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen radicals Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野コ 本発明はＳｉ、Ｎ、膜の形成方法に関する。[Detailed description of the invention] [Industrial application fields] The present invention relates to a method for forming Si, N, and films.
［従来の技術］
従来、Ｓｉ、Ｎ、膜の形成方法には ３ＳｉＨ，＋４Ｎ
Ｈ４１）Ｓ ｉｓ Ｎ４ ＋ １２ Ｈｚの反応等によ
るいわゆるＯＶＤ法及び、Ｓｉ基板やＳｉ膜あるいは５
ｉＯ１膜等を９００℃以上の高温で窒素雰囲気やアンモ
ニア雰囲気に晒して窒化する等の方法が用いられている
。[Conventional technology] Conventionally, Si, N, and film formation methods include 3SiH, +4N.
H41) So-called OVD method using Si is N4 + 12 Hz reaction, etc., and Si substrate, Si film, or
A method of nitriding an iO1 film or the like by exposing it to a nitrogen atmosphere or an ammonia atmosphere at a high temperature of 900° C. or higher is used.
［発明が解決しようとする課題］
しかし、上記従来技術によるとＳ ｉ、Ｎ、の生成温度
が８００℃以上と高いと云う課題があり、ひいてはＳｉ
ウエーハの大口径化に伴う高温熱処理時の歪が太き（な
ると云う課題があった。[Problems to be Solved by the Invention] However, according to the above-mentioned prior art, there is a problem that the generation temperature of Si,N is as high as 800°C or higher, and as a result, Si
There was a problem in that as the diameter of the wafer increased, the strain during high-temperature heat treatment increased.
本発明はかかる従来技術の課題を解決し、８１基板又は
Ｓｉ膜（含５１０２膜）を８００℃以下の低温で形成す
る新しいシリコン窒化膜の形成方法を提供する事を目的
とする。It is an object of the present invention to solve the problems of the prior art and to provide a new method for forming a silicon nitride film in which an 81 substrate or a Si film (including a 5102 film) is formed at a low temperature of 800° C. or lower.
［課題を解決するための手段］
上記課題を解決するために、本発明はシリコン窒化膜の
形成方法に関し、８１基板又はＳｉ膜（含Ｓ ｉ Ｏ２
膜）表面に窒素ラジカルを照射しＳｉ３Ｎ４膜を形成す
る手段を取る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a method for forming a silicon nitride film, and relates to a method for forming a silicon nitride film on an 81 substrate or a Si film (containing SiO2).
Film) A method is taken to form a Si3N4 film by irradiating the surface with nitrogen radicals.
［実施例コ 以下、実施例により本発明を詳述する。[Example code] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の実施例を示すためのＳｉ、Ｎ。FIG. 1 shows Si, N to show an embodiment of the present invention.
膜形成装置の模式図である。すなわち、加熱するだめの
炉１内には支持台２が設置され、該支持台２の上にはＳ
ｌ等のウェーハ３が設置され、前記炉１には石英から成
るチーーブ４が挿入されて成り、該チューブ４にはマイ
クロ波電極等を具備したプラズマ発生器５゜が連結され
ると共に、窒素ガス６や水素がスフやアンモニア−ガス
８あるいはアルゴン・ガスやヘリウム・ガス等の導入口
が取付けられて成る。FIG. 2 is a schematic diagram of a film forming apparatus. That is, a support stand 2 is installed in the furnace 1 for heating, and on the support stand 2 there is an S.
A tube 4 made of quartz is inserted into the furnace 1. A plasma generator 5° equipped with a microwave electrode etc. is connected to the tube 4, and a nitrogen gas 6, hydrogen gas, ammonia gas 8, or an inlet for argon gas, helium gas, etc. is installed.
いま、８１基板あるいはＳｉ膜や５１０２膜が形成され
たウェーハ３を炉１により６００℃程度に加熱しながら
チューブ４から窒素ガス６をプラズマ発生器５で励起し
て窒素プラズマを発生させ、該窒素プラズマ中の活性な
窒素ラジカルを、前記ウェー／・３０表面に照射すると
、３１基板表面やＳｉ膜あるいはＳ ｉ Ｏ２膜は１ｏ
ｏｉ／分程度の速度でＳｉ、Ｎ４膜化することができる
。Now, while heating the 81 substrate or the wafer 3 on which the Si film or the 5102 film has been formed to about 600°C in the furnace 1, nitrogen gas 6 from the tube 4 is excited by the plasma generator 5 to generate nitrogen plasma. When active nitrogen radicals in plasma are irradiated onto the surface of the wafer/30, the surface of the substrate 31, the Si film or the SiO2 film becomes 1o
Si and N4 films can be formed at a rate of about oi/min.
尚、・導入ガスは窒素ガスに代え、アンモニア・ガスで
あっても良く、窒素ガスと水素ガスの混合ガスであって
も良い。この場合には窒素ラジカルと同時に水素ラジカ
ルも発生し、−層の低温化及び高速成膜化を計る事が出
来る。Note that, instead of nitrogen gas, the introduced gas may be ammonia gas or a mixed gas of nitrogen gas and hydrogen gas. In this case, hydrogen radicals are generated at the same time as nitrogen radicals, and it is possible to lower the temperature of the -layer and increase the speed of film formation.
更に、反応速度等を制御するために、窒素ガスやアンモ
ニア・ガス、あるいは窒素ガスと水素ガス等と共に、ア
ルゴン・ガスやヘリウム−ガスを導入しても良い。Further, in order to control the reaction rate, etc., argon gas or helium gas may be introduced together with nitrogen gas, ammonia gas, or nitrogen gas and hydrogen gas.
［発明の効果］
本発明により８１基板表面やＳｉ膜あるいはｓｉｏ□膜
を８００℃以下の低温で窒化してＳｉ。[Effects of the Invention] According to the present invention, the surface of the 81 substrate, the Si film, or the sio□ film is nitrided at a low temperature of 800° C. or less to form Si.
Ｎ４膜を形成する事ができ、Ｓｉウェーハ等の大口径化
に伴う加熱処理時の歪発生を押えることができる効果等
がある。It is possible to form an N4 film, and has the effect of suppressing the generation of distortion during heat treatment associated with increasing the diameter of Si wafers, etc.
第１図は本発明の詳細な説明するためのＳｉ。 Ｎ４膜形成装置の模式図である。 １・・・・・・・・・炉 ２・・・・・・・・・支持台 ・・・・・・・・・ウェーハ ・・・・・・・・・チューブ ・・・・・・・・・プラズマ発生器 ・・・・・・・・・窒素ガス ・・・・・・・・・水素ガス ・・・・・・・・・アンモニア・ガス FIG. 1 shows Si for detailed explanation of the present invention. FIG. 2 is a schematic diagram of an N4 film forming apparatus. １・・・・・・・・・Furnace 2・・・・・・・・・Support stand ・・・・・・・・・Wafer ·········tube ・・・・・・・・・Plasma generator ・・・・・・・・・Nitrogen gas ・・・・・・・・・Hydrogen gas ・・・・・・・・・Ammonia gas
Claims (1)
ｉ＿３Ｎ＿４膜を形成する事を特徴とするシリコン窒化
膜の形成方法。The Si substrate or Si film surface is irradiated with nitrogen radicals to
A method for forming a silicon nitride film characterized by forming an i_3N_4 film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP872990A JPH03212938A (en) | 1990-01-18 | 1990-01-18 | Forming method of silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP872990A JPH03212938A (en) | 1990-01-18 | 1990-01-18 | Forming method of silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03212938A true JPH03212938A (en) | 1991-09-18 |
Family
ID=11701042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP872990A Pending JPH03212938A (en) | 1990-01-18 | 1990-01-18 | Forming method of silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03212938A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376223A (en) * | 1992-01-09 | 1994-12-27 | Varian Associates, Inc. | Plasma etch process |
| WO1999064645A1 (en) * | 1998-06-12 | 1999-12-16 | Applied Materials, Inc. | A method and apparatus for the formation of dielectric layers |
| WO2002054474A1 (en) * | 2000-12-28 | 2002-07-11 | Tadahiro Ohmi | Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device |
| JP2002543584A (en) * | 1999-04-22 | 2002-12-17 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for exposing a substrate to plasma radicals |
| WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
| US8361845B2 (en) | 2005-06-30 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
1990
- 1990-01-18 JP JP872990A patent/JPH03212938A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5376223A (en) * | 1992-01-09 | 1994-12-27 | Varian Associates, Inc. | Plasma etch process |
| WO1999064645A1 (en) * | 1998-06-12 | 1999-12-16 | Applied Materials, Inc. | A method and apparatus for the formation of dielectric layers |
| JP2002543584A (en) * | 1999-04-22 | 2002-12-17 | アプライド マテリアルズ インコーポレイテッド | Apparatus and method for exposing a substrate to plasma radicals |
| WO2002054474A1 (en) * | 2000-12-28 | 2002-07-11 | Tadahiro Ohmi | Dielectric film and method of forming it, semiconductor device, nonvolatile semiconductor memory device, and production method for semiconductor device |
| US7439121B2 (en) | 2000-12-28 | 2008-10-21 | Tadahiro Ohmi | Dielectric film and method of forming it, semiconductor device, non-volatile semiconductor memory device, and production method for semiconductor device |
| US7718484B2 (en) | 2000-12-28 | 2010-05-18 | Foundation For Advancement Of International Science | Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film |
| WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
| US7250375B2 (en) | 2001-08-02 | 2007-07-31 | Tokyo Electron Limited | Substrate processing method and material for electronic device |
| US8361845B2 (en) | 2005-06-30 | 2013-01-29 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101524076B1 (en) * | 2005-06-30 | 2015-05-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Method for manufacturing semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0926707A3 (en) | Heat treatment apparatus, heat treatment process employing the same, and process for producing semiconductor article | |
| JPH03212938A (en) | Forming method of silicon nitride film | |
| EP0469157A4 (en) | Method of treating semiconductor substrate surface and device therefor | |
| JPH0685391B2 (en) | Deposited film formation method | |
| JPH0310082A (en) | Method and device for forming deposited film | |
| JPS5998726A (en) | Formation of oxide film | |
| JPS59207621A (en) | Formation of thin film | |
| JPH03139824A (en) | Depositing method for semiconductor device | |
| JPS60190566A (en) | Preparation of silicon nitride | |
| JP3357219B2 (en) | Method and apparatus for forming silica-based coating | |
| JPH03215936A (en) | Semiconductor manufacturing device | |
| JPS59168642A (en) | Oxidizing device for semiconductor substrate | |
| JP3171630B2 (en) | Method of forming SiN film | |
| JP2500765B2 (en) | Plasma CVD equipment | |
| JPH04333223A (en) | Film forming method and device thereof | |
| JPS5642350A (en) | Formation of insulating film | |
| JPH05243214A (en) | Equipment for forming silicon oxide film on semiconductor substrate | |
| JPH01222053A (en) | Diamond coating method | |
| JPH04100224A (en) | Semiconductor manufacturing device and manufacture of semiconductor device | |
| JP2746639B2 (en) | Wafer pretreatment method for pyro-oxidation and phosphorus diffusion | |
| JP2735250B2 (en) | Method of forming silicon oxide film | |
| JPH0355842A (en) | Semiconductor manufacturing equipment and semiconductor manufacturing method | |
| JPS6328865A (en) | Hard carbon film manufacturing device | |
| JPH07226399A (en) | Method and apparatus for oxidation of semiconductor substrate | |
| JPS60162776A (en) | Plasma treating device |