JPH03187191A - Thin film el device - Google Patents
Thin film el deviceInfo
- Publication number
- JPH03187191A JPH03187191A JP1326173A JP32617389A JPH03187191A JP H03187191 A JPH03187191 A JP H03187191A JP 1326173 A JP1326173 A JP 1326173A JP 32617389 A JP32617389 A JP 32617389A JP H03187191 A JPH03187191 A JP H03187191A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- emitting layer
- light emitting
- color
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 108
- 229910052984 zinc sulfide Inorganic materials 0.000 claims abstract description 32
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical compound [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 30
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 30
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 12
- 239000011572 manganese Substances 0.000 claims abstract description 12
- 229910052684 Cerium Inorganic materials 0.000 claims abstract description 11
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 11
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 9
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 4
- 238000005401 electroluminescence Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 239000003086 colorant Substances 0.000 abstract 1
- 238000000313 electron-beam-induced deposition Methods 0.000 abstract 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000000295 emission spectrum Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 238000001748 luminescence spectrum Methods 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MMXSKTNPRXHINM-UHFFFAOYSA-N cerium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Ce+3].[Ce+3] MMXSKTNPRXHINM-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- OTUDGWGELZRVRY-UHFFFAOYSA-N terbium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Tb+3].[Tb+3] OTUDGWGELZRVRY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3671—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use as electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜ＥＬ（エレクトロルミネッセンス）素子に
関し、特にマルチカラー平面デイスプレィに用いること
のできる薄膜ＥＬ素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thin film EL (electroluminescence) device, and particularly to a thin film EL device that can be used in a multicolor flat display.
［従来の技術］
一般に薄膜ＥＬ素子は全固体薄型でコントラストの高い
高品質の表示ができるなどの優れた特徴を持つものであ
り、基板上に第一電極を配設し、該電極上に第一絶縁層
、ＥＬ発光層、第二絶縁層および第二電極を積層した構
造を有し、第一電極と第二電極との間に電圧を印加する
ことにより発光を生じる。この薄膜ＥＬ素子のＥＬ発光
層の材料としては硫化亜鉛にマンガンを添加したものが
知られており、この材料を用いた薄膜ＥＬ素子は黄橙色
発光を呈し、計測機器、各種情報機器などへ応用されて
いる。[Prior Art] Thin-film EL devices generally have excellent features such as being thin, all-solid-state, and capable of high-contrast, high-quality display. It has a structure in which one insulating layer, an EL light-emitting layer, a second insulating layer, and a second electrode are laminated, and light is emitted by applying a voltage between the first electrode and the second electrode. The material for the EL emitting layer of this thin film EL device is known to be zinc sulfide with manganese added.Thin film EL devices using this material emit yellow-orange light and are used in measuring instruments, various information devices, etc. has been done.
ところで近年、より多くの情報を表示するために多色あ
るいはフルカラー表示が可能なＲＩＩＩ Ｅ Ｌ素子の
出現が強く望まれており、薄膜ＥＬ素子を用いて多色表
示をする方法のひとつとして、幅広いスペクトルをもっ
た発光を呈する薄膜ＥＬ素子の上にカラーフィルターを
重ねる方法が提案されている。そのため幅広い発光を呈
する薄膜ＥＬ素子の検討が行なわれている。このような
薄膜ＥＬ素子として例えば硫化ストロンチウムにセリウ
ムおよび塩素元素を添加した材料からなるＲ膜の上にマ
ンガンを添加した硫化亜鉛からなる薄膜を積層し、この
積層物をＥＬ発光層として用いたものが知られている。Incidentally, in recent years, there has been a strong desire for the emergence of RIII EL elements capable of multi-color or full-color display in order to display more information. A method has been proposed in which a color filter is placed on top of a thin film EL element that emits light with a spectrum. For this reason, thin film EL elements that exhibit a wide range of light emission are being studied. As such a thin film EL element, for example, a thin film made of zinc sulfide to which manganese is added is laminated on an R film made of a material in which cerium and chlorine elements are added to strontium sulfide, and this laminate is used as an EL light emitting layer. It has been known.
しかしながら、このような薄膜ＥＬ素子に通常のカラー
フィルターを適用して薄膜ＥＬパネルを得た場合、得ら
れるパネルは緑色領域で黄色によった緑が、青色領域で
は白っぽいあるいは緑がかった青が得られるなど色純度
の点で問題があった。また、上記薄膜ＥＬ素子から深い
緑および深い青を得るために特殊なカラーフィルターを
用いた場合縁、青の色調は良くなるが、輝度がかなり損
なわれるという問題があった。However, if a normal color filter is applied to such a thin film EL element to obtain a thin film EL panel, the resulting panel will have a yellowish green color in the green region and a whitish or greenish blue color in the blue region. There were problems with color purity. Further, when a special color filter is used to obtain deep green and deep blue from the thin film EL element, the blue tone is improved, but there is a problem in that the brightness is considerably impaired.
［発明が解決しようとする課題］
本発明は上記課題に鑑みてなされたものであり、カラー
フィルタを適用した多色化薄膜ＥＬパネルを得るために
好適に用いることのできる薄膜ＥＬ素子を提供すること
にある。[Problems to be Solved by the Invention] The present invention has been made in view of the above problems, and provides a thin film EL element that can be suitably used to obtain a multicolor thin film EL panel to which a color filter is applied. There is a particular thing.
［課題を解決するための手段］
本発明者らは上記課題を解決するために、硫化ストロン
チウム薄膜と硫化亜鉛薄膜を含んでなるＥＬ発光層およ
び上記ＥＬ発光層中に発光中心として添加する元素につ
いて鋭意検討を行った結果本発明を完成するに至った。[Means for Solving the Problems] In order to solve the above problems, the present inventors have developed an EL light-emitting layer comprising a strontium sulfide thin film and a zinc sulfide thin film, and an element added as a luminescence center in the EL light-emitting layer. As a result of extensive research, we have completed the present invention.
すなわち本発明は、セリウムを含有する硫化ストロンチ
ウム薄膜、テルビウムを含有する硫化ストロンチウム薄
膜また硫化亜鉛薄膜及びマンガンを含有する硫化亜鉛薄
膜を含んでなるＥＬ発光層を備えることを特徴とする薄
膜ＥＬ素子である。That is, the present invention provides a thin film EL device comprising an EL light emitting layer comprising a strontium sulfide thin film containing cerium, a strontium sulfide thin film containing terbium, or a zinc sulfide thin film and a manganese containing zinc sulfide thin film. be.
本発明の薄膜ＥＬ素子はＥＬ発光層が上記硫化ストロン
チウム薄膜及び硫化亜鉛薄膜を含むものであればよく、
これら薄膜の上下位置については限定されない。更に上
記薄膜は各々複数層含むものであってもよい。このうち
、薄膜形成過程の観点からＥＬ発光層の最上層および最
下層を硫化亜鉛薄膜とすることによりＥＬ発光層のリソ
グラフィー耐性が向上するので好ましい。本発明の薄膜
ＥＬ素子は上記の薄膜をＥＬ発光層中に含むことにより
スペクトルの幅が広い発光を呈し、発光色に偏りのない
発光を呈するものとなる。したがって、この薄膜ＥＬ素
子とカラーフィルタを重ねることにより得られる薄膜Ｅ
Ｌパネルは色純度の点で問題のないものとなる。The thin film EL device of the present invention may have an EL light emitting layer containing the above-mentioned strontium sulfide thin film and zinc sulfide thin film,
The vertical positions of these thin films are not limited. Furthermore, each of the above thin films may include a plurality of layers. Among these, from the viewpoint of the thin film formation process, it is preferable to use a zinc sulfide thin film as the uppermost layer and the lowermost layer of the EL luminescent layer, since this improves the lithography resistance of the EL luminescent layer. The thin film EL device of the present invention includes the above-mentioned thin film in the EL light emitting layer, so that it emits light with a wide spectrum and has no bias in emitted color. Therefore, the thin film E obtained by overlapping this thin film EL element and color filter
The L panel has no problem in terms of color purity.
なお、本発明の薄膜ＥＬ素子のＥＬ発光層中に含まれる
セリウムは硫化ストロンチウム薄膜に対して０．０３〜
０．２５原子％、テルビウムは硫化ストロンチウム薄膜
または硫化亜鉛薄膜に対して０．２〜３．０原子％、マ
ンガンは硫化亜鉛薄膜に対して０．１〜１．０原子％と
することが好ましく、上記範囲の含有量とすることによ
り高輝度の発光を呈する薄膜ＥＬ素子が得られる。Note that the cerium contained in the EL light emitting layer of the thin film EL device of the present invention is 0.03 to
It is preferable that the amount of terbium be 0.25 at%, 0.2 to 3.0 at% of terbium to the strontium sulfide thin film or the zinc sulfide thin film, and 0.1 to 1.0 at% of manganese to the zinc sulfide thin film. By setting the content within the above range, a thin film EL element that emits light with high brightness can be obtained.
また、本発明の薄膜ＥＬ素子における発光層の厚みは特
に限定されないが、薄膜ＥＬ素子の駆動電圧、明るさな
どを考慮して０．５〜３．０ｇｍとすることが好ましい
。Further, the thickness of the light emitting layer in the thin film EL device of the present invention is not particularly limited, but it is preferably 0.5 to 3.0 gm in consideration of the drive voltage, brightness, etc. of the thin film EL device.
本発明の薄膜ＥＬ素子の発光層は例えばスパッタリング
法、蒸着法、ＣＶＤ法、ＡＬＥ法など種々の薄膜形成技
術により形成することができる。The light emitting layer of the thin film EL device of the present invention can be formed by various thin film forming techniques such as sputtering, vapor deposition, CVD, and ALE.
更に本発明の薄膜ＥＬ素子のＥＬ発光層において、含ま
れる硫化ストロンチウム薄膜の結晶方位が［１００１に
配向し、硫化亜鉛薄膜の結晶方位が閃亜鉛鉱型構造の［
１１１１及び／またはウルツ鉱型構造の［００１１に”
配向している場合、より安定した色調、高輝度の発光を
呈する。上記結晶方位が配向した硫化ストロンチウム薄
膜、硫化亜鉛薄膜は薄膜形成条件を適宜調整することに
より得ることができる。例えば電子ビーム蒸着法により
薄膜を形成する場合、硫化亜鉛薄膜は基板温度を２００
〜２５０℃として形成することにより上記のように配向
し易くなり、硫化ストロンチウム薄膜は基板温度を３０
０〜７００℃とし、蒸着源として希土類元素が硫化物の
形で含有する硫化ストロンチウムを用いて形成すること
により結晶の配向性の制御が容易となる。Furthermore, in the EL light-emitting layer of the thin film EL device of the present invention, the crystal orientation of the strontium sulfide thin film contained therein is oriented in [1001, and the crystal orientation of the zinc sulfide thin film is oriented in [1001], which has a zinc blende structure.
1111 and/or wurtzite structure [0011”
When it is oriented, it exhibits more stable color tone and high-intensity light emission. The strontium sulfide thin film and zinc sulfide thin film with the above-mentioned crystal orientation can be obtained by appropriately adjusting the thin film forming conditions. For example, when forming a thin film by electron beam evaporation, the zinc sulfide thin film has a substrate temperature of 200°C.
By forming the strontium sulfide thin film at a temperature of ~250°C, it becomes easier to align as described above.
By setting the temperature to 0 to 700° C. and using strontium sulfide containing a rare earth element in the form of sulfide as a vapor deposition source, the crystal orientation can be easily controlled.
［実施例］
以下、本発明を実施例により示すが、本発明はこれらに
限定されるものではない。[Examples] Hereinafter, the present invention will be illustrated by Examples, but the present invention is not limited thereto.
実施例１．２ 比較例１ 第１図に示す構造の薄膜ＥＬ素子を製造した。Example 1.2 Comparative example 1 A thin film EL device having the structure shown in FIG. 1 was manufactured.
はじめにガラス基板１の上に、フォトエツチングにより
ストライプ状に透明電極２を形威し、この上に第一絶縁
層３を形成した。第一絶縁層３は酸化ケイ素を０，０３
ｊｓ、窒化ケイ素を０．１７ｊｍ、ＲＦスパッタリング
法により積層して形成した。First, a transparent electrode 2 was formed in stripes on a glass substrate 1 by photo-etching, and a first insulating layer 3 was formed thereon. The first insulating layer 3 contains 0.03 silicon oxide
js, silicon nitride was deposited to a thickness of 0.17jm by RF sputtering.
次に発光層４．５及び６を電子ビーム蒸着法により形成
した。発光層４はマンガンを０．４原子％含む硫化亜鉛
薄膜であり、その厚みは約０．６μｍとし、発光層５は
テルビウムを２．０原子％含有する硫化ストロンチウム
薄膜であり、その厚みは約０．４μｍとし、更にその上
の発光層６はセリウムを０．１原子％含む硫化ストロン
チウム薄膜であり、その厚みは約１．０μｍとした。ま
た、発光層４の蒸着は基板温度を２３０℃と一定にし、
発光層５．６の蒸着は、基板温度を６００℃と一定にし
て、到達真空度を３ Ｘ １０−６Ｔｏｒｒ以下とし、
蒸着中は硫化水素を３ Ｘ １０−５Ｔｏｒｒまで導入
して雰囲気の制御を行ない、堆積速度は５人／秒として
行なった。更に発光層５．６を蒸着する際に、テルビウ
ム硫化物またはセリウム硫化物を硫化ストロンチウムに
混合して得られたペレットを蒸着源として用いた。Next, light emitting layers 4.5 and 6 were formed by electron beam evaporation. The light-emitting layer 4 is a zinc sulfide thin film containing 0.4 at% manganese and has a thickness of approximately 0.6 μm, and the light-emitting layer 5 is a strontium sulfide thin film containing 2.0 at% terbium and has a thickness of approximately 0.6 μm. Further, the light emitting layer 6 thereon was a strontium sulfide thin film containing 0.1 atomic % of cerium, and its thickness was about 1.0 μm. In addition, when depositing the light emitting layer 4, the substrate temperature was kept constant at 230°C.
The light-emitting layer 5.6 was deposited at a constant substrate temperature of 600°C and an ultimate vacuum of 3 x 10-6 Torr or less.
During the deposition, the atmosphere was controlled by introducing hydrogen sulfide to 3.times.10@-5 Torr, and the deposition rate was 5 people/second. Further, when depositing the light emitting layer 5.6, pellets obtained by mixing terbium sulfide or cerium sulfide with strontium sulfide were used as a deposition source.
次に、発光層６の上にＲＦスパッタリング法により第二
絶縁層７を形成した。第二絶縁層７は厚み０．１５ｊｍ
の窒化ケイ素および厚み０．０５１ｍの酸化アルミニウ
ムを積層して形成した。更にこの第二絶縁層７上に背面
電極８として金属アルミニウムを０．１１ｍの厚みで透
明電極２と直交するように形成した。Next, a second insulating layer 7 was formed on the light emitting layer 6 by RF sputtering. The second insulating layer 7 has a thickness of 0.15jm
was formed by laminating silicon nitride of 0.051 m in thickness and aluminum oxide of 0.051 m in thickness. Furthermore, metal aluminum was formed as a back electrode 8 on this second insulating layer 7 with a thickness of 0.11 m so as to be perpendicular to the transparent electrode 2.
以上の方法により作製した薄膜ＥＬ素子には湿気防止対
策として背面ガラスを取り付け、背面ガラスと薄膜ＥＬ
素子との間の空間部分にシリカゲルを含んだシリコンオ
イルを注入した後、注入口の封止を行ない、これを用い
て発光特性の測定を行なった。なお、特性測定は透明電
極２と背面電極８との間に周波数５０Ｈｚ、パルス幅３
０μ秒の交流パルスを印加させて行なった。A back glass was attached to the thin film EL device manufactured by the above method as a moisture prevention measure, and the back glass and thin film EL
After silicone oil containing silica gel was injected into the space between the device and the device, the injection port was sealed, and the light emitting characteristics were measured using this. In addition, the characteristic measurement was performed using a frequency of 50 Hz and a pulse width of 3 between the transparent electrode 2 and the back electrode 8.
This was performed by applying an alternating current pulse of 0 microseconds.
また、実施例２として発光層５．が厚み約０．４１のテ
ルビウムを２．０原子％含有した硫化亜鉛薄膜を用いた
以外は上記薄膜ＥＬ素子（実施例１）と同様の構造の薄
膜ＥＬ素子を作製し、特性測定を行なった。更に比較例
１として発光層５を形威しなかった以外は実施例１と同
様の構造の薄膜ＥＬ素子を作製し、特性測定を行なった
。なお実施例２において、発光層５は基板温度を２３０
℃と一定にして電子ビーム蒸着法により形成した。Further, as Example 2, the light emitting layer 5. A thin film EL device having the same structure as the above thin film EL device (Example 1) was fabricated, except that a zinc sulfide thin film containing 2.0 at% of terbium and having a thickness of about 0.41 was used, and its characteristics were measured. . Further, as Comparative Example 1, a thin film EL device having the same structure as Example 1 except that the light emitting layer 5 was not formed was fabricated, and its characteristics were measured. In Example 2, the light emitting layer 5 has a substrate temperature of 230°C.
It was formed by electron beam evaporation at a constant temperature of .degree.
ｍ２図に実施例１、実施例２、比較例１により得られた
薄膜ＥＬ素子の発光スペクトルを示す。Fig. m2 shows the emission spectra of the thin film EL devices obtained in Example 1, Example 2, and Comparative Example 1.
第２図より実施例１の薄膜ＥＬ素子の発光スペクトルは
４５０〜５５０ ｎａのセリウムを含有した硫化ストロ
ンチウム薄膜に由来する発光、５５０〜６４０ｎｓのマ
ンガンを含有した硫化亜鉛薄膜に由来する発光及び５４
５ｎ−付近のピークを最大強度とした４００〜６００
ｒｖにわたる幾つかのピークの発光が認められた。また
実施例２の薄膜ＥＬ素子の発光スペクトルはテルビウム
を含有した硫化亜鉛薄膜に由来した５４３．４８８ｎｗ
なとのピークと前記のセリウムを含有した硫化ストロン
チウム薄膜に由来する発光およびマンガンを含有した硫
化亜鉛薄膜に由来する発光スペクトルが重なり合わされ
たものが認められた。以上の発光スペクトルにより、本
発明の薄膜ＥＬ素子は結果的に比較例１の薄膜ＥＬ素子
と比較すると幅広いスペクトルの発光を呈することがわ
かる。From FIG. 2, the emission spectra of the thin film EL device of Example 1 are as follows: 450 to 550 nA of light emission originating from the strontium sulfide thin film containing cerium, 550 to 640 ns of light emission originating from the manganese containing zinc sulfide thin film, and 54 to 540 nA of light emission originating from the zinc sulfide thin film containing manganese.
400 to 600 with maximum intensity of peak near 5n-
Several peaks of emission across the rv were observed. Furthermore, the emission spectrum of the thin film EL device of Example 2 was 543.488nw derived from the zinc sulfide thin film containing terbium.
It was observed that the peak of 100% and the luminescence spectrum derived from the strontium sulfide thin film containing cerium and the luminescence spectrum originating from the zinc sulfide thin film containing manganese were superimposed. From the above emission spectra, it can be seen that the thin film EL device of the present invention emits light with a wider spectrum than the thin film EL device of Comparative Example 1.
次に、第３図に示す透過特性を持つカラーフィルターを
用いて実施例１．２及び比較例１の薄膜ＥＬｇ子の赤、
緑、青の発光を分離した。この薄膜ＥＬ素子を２３０ｖ
で駆動したときの赤、緑、青の色度座標を第４図に、輝
度を表１に示す。また、参考のために第４図中にＣＲＴ
の色度座標を併わせて示した。第４図および表１より、
本発明の薄膜ＥＬ素子は輝度レベルをほとんど損なうこ
となく、緑、青の色度座標が向上し、ＣＲＴの色度座標
に近づくことが確認された。Next, using a color filter having the transmission characteristics shown in FIG.
Green and blue luminescence were separated. This thin film EL element
The chromaticity coordinates of red, green, and blue are shown in FIG. 4, and the brightness is shown in Table 1. Also, for reference, the CRT is shown in Figure 4.
The chromaticity coordinates of are also shown. From Figure 4 and Table 1,
It was confirmed that the thin film EL element of the present invention has improved green and blue chromaticity coordinates, approaching those of a CRT, with almost no loss in brightness level.
表１
実施例３
実施例１と同様の方法で、第１図に示すＥＬ素子を作製
した。ただし発光層４．５及び６を蒸着する場合の硫化
水素圧力、蒸着速度を制御して得られる薄膜の結晶方位
の配向性を制御した。Table 1 Example 3 The EL device shown in FIG. 1 was produced in the same manner as in Example 1. However, when the light-emitting layers 4.5 and 6 were deposited, the hydrogen sulfide pressure and deposition rate were controlled to control the crystal orientation of the resulting thin films.
第５図に得られたマンガンを含有する硫化亜鉛薄膜（発
光層４）のＸ線回折パターンを示すが、これによりこの
薄膜は閃亜鉛鉱型構造の［１１１］に配向していること
が確認された。また第６図にセリウムを含有する硫化ス
トロンチウムＩＮ （発光層６）のＸ線回折パターンを
示すが、このうちピークはそれぞれ岩塩型結晶構造の硫
化ストロンチウムにおける（１１１）、（２００）、（
２２０）と同定された。なお、テルビウムを含有する硫
化ストロンチウム薄膜（発光層５）においても第６図と
同様のＸ線回折パターンが得られた。Figure 5 shows the X-ray diffraction pattern of the obtained manganese-containing zinc sulfide thin film (light-emitting layer 4), which confirms that this thin film has a [111] orientation with a zincblende structure. It was done. Figure 6 shows the X-ray diffraction pattern of strontium sulfide IN (light-emitting layer 6) containing cerium, of which the peaks are (111), (200), and (200) for strontium sulfide with a rock salt crystal structure, respectively.
220). Note that an X-ray diffraction pattern similar to that shown in FIG. 6 was also obtained for the strontium sulfide thin film (light-emitting layer 5) containing terbium.
第７頭に硫化ストロンチウム薄膜の［１００Ｆ方向の配
向性に関連する（２００）ピーク強度と（１１１）ピー
ク強度の比を横軸にとり、フィルター透過後のＲＧＢの
発光開始電圧を縦軸にとりプロットしたグラフを、第８
図に縦軸として４８Ｖでの輝度をとりプロットしたグラ
フを示す。第７図及び第８図より硫化ストロンチウム薄
膜の［１００Ｆ方向の配向性が強くなるにしたがってＲ
ＧＢの発光開始電圧が一致するために色調の制御性が良
くなり、輝度についても高くなるという結果が得られた
。In the seventh head, the horizontal axis is the ratio of the (200) peak intensity to the (111) peak intensity, which is related to the orientation of the strontium sulfide thin film in the [100F direction, and the vertical axis is the RGB emission starting voltage after passing through the filter. graph, 8th
The figure shows a graph plotting the luminance at 48V as the vertical axis. From FIGS. 7 and 8, as the orientation of the strontium sulfide thin film in the [100F direction becomes stronger, R
Since the emission start voltages of GB were the same, the controllability of color tone was improved and the brightness was also increased.
［発明の効果コ
以上述べたように、本発明の薄膜ＥＬ素子は緑、青領域
の発光の色純度について、輝度を落とすことなく改善さ
れる。従って本発明の薄１１１ＥＬ素子とカラーフィル
ターを組み合わせることにより、カラーＣＲＴに匹敵す
る良好な色再現領域を持ったカラーＥＬパネルが得られ
る。また、本発明の薄膜ＥＬ素子における発光層を構成
する硫化亜鉛薄膜と硫化ストロンチウム薄膜の結晶方位
を特定することにより、ＲＧＢの発光開始電圧が一致す
るために階調表示が可能となる。[Effects of the Invention] As described above, the thin film EL device of the present invention improves the color purity of emitted light in the green and blue regions without reducing brightness. Therefore, by combining the thin 111 EL element of the present invention and a color filter, a color EL panel with a good color reproduction range comparable to that of a color CRT can be obtained. Furthermore, by specifying the crystal orientations of the zinc sulfide thin film and the strontium sulfide thin film that constitute the light emitting layer in the thin film EL element of the present invention, the RGB light emission start voltages match, making it possible to display gradations.
第１図は本発明の薄膜ＥＬ素子の構造の一実施例を示す
断面図である。
第２図は本発明の実施例１．２及び比較例１の薄膜ＥＬ
素子の発光スペクトルを示す図である。
第３図は本発明の実施例において用いたカラーフィルタ
ーの透過特性である。
第４図は本発明の実施例１．２及び比較例１の薄膜ＥＬ
素子の発光の色度座標を示す図である。
第５図は本発明の実施例３において得られた薄膜ＥＬ素
子の発光層に含まれる硫化亜鉛薄膜のＸ線回折パターン
を示す図である。
第６図は本発明の実施例３において得られた薄膜ＥＬ素
子の発光層に含まれる硫化ストロンチウム薄膜のＸ線回
折パターンを示す図である。
第７図は本発明の実施例３において得られた薄膜ＥＬ素
子のＥＬ発光層中の硫化ストロンチウム薄膜の［１００
１配向性とＲＧＢ発光の発光開始電圧との関係を示す図
である。
第８図は本発明の実施例３において得られた薄膜ＥＬ素
子のＥＬ発光層中の硫化ストロンチウム薄膜の［１００
１配向性と発光開始電圧から４８ｖ上での輝度との関係
を示す図である。FIG. 1 is a sectional view showing one embodiment of the structure of a thin film EL device of the present invention. Figure 2 shows the thin film EL of Example 1.2 of the present invention and Comparative Example 1.
FIG. 3 is a diagram showing the emission spectrum of the device. FIG. 3 shows the transmission characteristics of the color filter used in the example of the present invention. Figure 4 shows the thin film EL of Example 1.2 of the present invention and Comparative Example 1.
FIG. 3 is a diagram showing chromaticity coordinates of light emission of an element. FIG. 5 is a diagram showing an X-ray diffraction pattern of a zinc sulfide thin film included in the light emitting layer of the thin film EL device obtained in Example 3 of the present invention. FIG. 6 is a diagram showing an X-ray diffraction pattern of a strontium sulfide thin film contained in the light emitting layer of the thin film EL device obtained in Example 3 of the present invention. FIG. 7 shows the [100
1 is a diagram showing the relationship between the 1 orientation and the emission start voltage of RGB light emission. FIG. 8 shows the [100
1 is a diagram showing the relationship between the 1 orientation and the luminance at 48 V from the emission start voltage.
Claims (4)
ルビウムを含有する硫化ストロンチウム薄膜または硫化
亜鉛薄膜及びマンガンを含有する硫化亜鉛薄膜を含んで
なるＥＬ発光層を備えることを特徴とする薄膜ＥＬ素子
。(1) A thin film EL device comprising an EL light emitting layer comprising a strontium sulfide thin film containing cerium, a strontium sulfide thin film containing terbium or a zinc sulfide thin film, and a zinc sulfide thin film containing manganese.
して０．０３〜０．２５原子％、テルビウムの含有量が
硫化ストロンチウム薄膜または硫化亜鉛薄膜に対して０
．２〜３．０原子％、マンガンの含有量が硫化亜鉛薄膜
に対して０．１〜１．０原子％であることを特徴とする
請求項第１項に記載の薄膜ＥＬ素子。(2) The content of cerium is 0.03 to 0.25 at% relative to the strontium sulfide thin film, and the terbium content is 0 relative to the strontium sulfide thin film or zinc sulfide thin film.
．． 2. The thin film EL device according to claim 1, wherein the content of manganese is 0.1 to 1.0 atom % based on the zinc sulfide thin film.
に配向し、硫化亜鉛薄膜の結晶方位が閃亜鉛鉱型構造の
［１１１］及び／またはウルツ鉱型構造の［００１］に
配向していることを特徴とする請求項第１項に記載の薄
膜ＥＬ素子。(3) The crystal orientation of the strontium sulfide thin film is [100]
2. The thin film according to claim 1, wherein the zinc sulfide thin film has a crystal orientation of [111] of a zinc blende structure and/or [001] of a wurtzite structure. EL element.
とすることを特徴とする請求項第１項に記載の薄膜ＥＬ
素子。(4) The thin film EL according to claim 1, wherein the uppermost layer and the lowermost layer of the EL light emitting layer are zinc sulfide thin films.
element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1326173A JPH03187191A (en) | 1989-12-18 | 1989-12-18 | Thin film el device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1326173A JPH03187191A (en) | 1989-12-18 | 1989-12-18 | Thin film el device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03187191A true JPH03187191A (en) | 1991-08-15 |
Family
ID=18184859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1326173A Pending JPH03187191A (en) | 1989-12-18 | 1989-12-18 | Thin film el device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03187191A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543237A (en) * | 1992-09-14 | 1996-08-06 | Fuji Xerox Co., Ltd. | Inorganic thin film electroluminescent device having an emission layer |
| US5648181A (en) * | 1992-09-14 | 1997-07-15 | Fuji Xerox Co., Ltd. | Inorganic thin film electroluminescent device having a light emission layer |
| US5667607A (en) * | 1994-08-02 | 1997-09-16 | Nippondenso Co., Ltd. | Process for fabricating electroluminescent device |
-
1989
- 1989-12-18 JP JP1326173A patent/JPH03187191A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5543237A (en) * | 1992-09-14 | 1996-08-06 | Fuji Xerox Co., Ltd. | Inorganic thin film electroluminescent device having an emission layer |
| US5648181A (en) * | 1992-09-14 | 1997-07-15 | Fuji Xerox Co., Ltd. | Inorganic thin film electroluminescent device having a light emission layer |
| US5667607A (en) * | 1994-08-02 | 1997-09-16 | Nippondenso Co., Ltd. | Process for fabricating electroluminescent device |
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