JPH0316179A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH0316179A JPH0316179A JP1149330A JP14933089A JPH0316179A JP H0316179 A JPH0316179 A JP H0316179A JP 1149330 A JP1149330 A JP 1149330A JP 14933089 A JP14933089 A JP 14933089A JP H0316179 A JPH0316179 A JP H0316179A
- Authority
- JP
- Japan
- Prior art keywords
- mixer diode
- active layer
- integrated circuit
- heterojunction
- mixer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 19
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 17
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は，マイクロ波通信機器に不可欠な周波数混合回
路（ミキサ）に用いられるミキサ・ダイオードを含む半
導体集積回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a semiconductor integrated circuit including a mixer diode used in a frequency mixing circuit (mixer) essential for microwave communication equipment.
（従来の技術）
近年、通信情報網が多様化し、衛星通信などニューメデ
ィアに注目が集っている。これらのマイクロ波用の通信
機器の小形化には、マイクロ波集積回路（以下ＭＭＴＣ
と称す）素子が必要である。(Prior Art) In recent years, communication information networks have diversified, and new media such as satellite communication are attracting attention. Microwave integrated circuits (hereinafter referred to as MMTCs) are used to downsize these microwave communication devices.
) elements are required.
従来、ＵＨＦ帯以上のマイクロ波回路に用いられる能動
素子には、化合物半導体として、ガリウム・ヒ素（以下
ＧａＡｓと称す）が用いられる。Conventionally, gallium arsenide (hereinafter referred to as GaAs) is used as a compound semiconductor in active elements used in microwave circuits in the UHF band or above.
Ｇ ａ Ａ ｓ素子のうち、電界効果トランジスタ（以
下ＦＥＴと称す）やダイオードの単品の他に、近年、Ｍ
ＭＩＣが用いられるようになってきた。Among GaAs elements, in addition to single field effect transistors (hereinafter referred to as FETs) and diodes, in recent years M
MIC has come into use.
まず．従来のマイクロ波回路に単品として使用されてい
るミキサ・ダイオードについて、第２図により説明する
。同図はその断面図で、従来のミキサ・ダイオードは、
ｎ”ＧａＡｓ基板１の表面に、ＧａＡｓ活性層２をエビ
タキシャル或長法によって形成し、さらに、その表面お
よび裏面にそれぞれショットキー電極３およびオーミッ
ク電極４を形戊する．なお、ショットキー電極３にはＡ
Ｑ． Ｔｉ／ＡＱあるいはＴｉ ／ Ｍｏ ／ Ａｕ等
がオーミック電極４には、ＡｕＧａ／＾ＵやＡｕＧｅＮ
ｉ／Ａｕ等がそれぞれ用いられる。first. A mixer diode used as a single item in a conventional microwave circuit will be explained with reference to FIG. The figure is a cross-sectional view of the conventional mixer diode.
A GaAs active layer 2 is formed on the surface of an n'' GaAs substrate 1 by an epitaxial elongation method, and a Schottky electrode 3 and an ohmic electrode 4 are formed on the front and back surfaces, respectively. A for
Q. Ti/AQ or Ti/Mo/Au etc. are used as the ohmic electrode 4, AuGa/^U or AuGeN
i/Au etc. are used respectively.
このミキサ・ダイオードの特徴は、ミキサ動作に不可欠
な低い直列抵抗ｒ．を、低抵抗のｎ”ＧａＡｓ基板１を
用いることで実現している。This mixer diode is characterized by low series resistance r, which is essential for mixer operation. This is realized by using a low resistance n'' GaAs substrate 1.
しかし、この構或は，単一構成部品には適しているが、
ｎ ” Ｇ ａ Ａ ｓ基板１を用いているため、集積
回路化は不可能であった。However, while this configuration is suitable for single components,
Since the n''GaAs substrate 1 was used, it was impossible to integrate the circuit.
次に、従来のＭＭＩＣに用いられるミキサ・ダイオード
について、第３図により説明する。同図において，半絶
縁性ＧａＡｓ基板５の表面にイオン注入によってｎ”Ｇ
ａＡｓ層６に挾まれたＧａＡｓ活性層７を形或した後、
上記のＧａＡｓ活性層７の上にショットキー電極８をｎ
”ＧａＡｓ層６の上にオーミック電極９をそれぞれ形成
する。なお，電極８および９に使用される金属は、上述
のミキサ・ダイオードと同様である。Next, a mixer diode used in a conventional MMIC will be explained with reference to FIG. In the figure, n''G is added to the surface of the semi-insulating GaAs substrate 5 by ion implantation.
After forming the GaAs active layer 7 sandwiched between the aAs layers 6,
A Schottky electrode 8 is placed on top of the GaAs active layer 7.
"Ohmic electrodes 9 are formed on the GaAs layer 6, respectively. Note that the metals used for the electrodes 8 and 9 are the same as those for the mixer diode described above.
このように，半絶縁性ＧａＡｓ基板５を用いることによ
って、素子間分離が容易となり，同一基板上に、ミキサ
・ダイオード、ＦＥＴ抵抗および容量等を含むＭＭＩＣ
の形戒が可能となる。In this way, by using the semi-insulating GaAs substrate 5, isolation between elements becomes easy, and an MMIC including a mixer diode, FET resistance, capacitance, etc. can be mounted on the same substrate.
The form of precepts becomes possible.
（発明が解決しようとする課題）
しかしながら、上記の構成では、ミキサ・ダイオードの
物性を左右する陽極と陰極間の直列抵抗ｒ１が極めて大
きく、従って、ミキサ動作をさせたときに、変換損失お
よび雑音指数が共に大きいという問題があった。また、
上記の直列抵抗ｒ．を下げるため、ｎ”ＧａＡｓＷＩ６
が用いられているが，ショットキー電極８の耐圧を確保
するために、Ｇ ａ Ａ ｓ活性層７の抵抗率をそれほ
ど下げることができず，従って、ＭＭＩＣの特性が極め
て悪いという問題があった。(Problem to be Solved by the Invention) However, in the above configuration, the series resistance r1 between the anode and cathode, which affects the physical properties of the mixer diode, is extremely large, and therefore, when the mixer is operated, conversion loss and noise are generated. There was a problem that both indices were large. Also,
The above series resistance r. In order to lower the
However, in order to ensure the breakdown voltage of the Schottky electrode 8, the resistivity of the GaAs active layer 7 could not be lowered that much, and therefore, there was a problem that the characteristics of the MMIC were extremely poor. .
本発明は上記の問題を解決するもので、変換損失および
雑音指数の小さいミキサ・ダイオードを有するＭＭＩＣ
を提供するものである。The present invention solves the above problems and provides an MMIC with a mixer diode with low conversion loss and low noise figure.
It provides:
（課題を解決するための手段）
上記の課題を解決するため、本発明は、ヘテロ接合を有
する半導体基板の上にミキサ・ダイオードを形或するも
のである。(Means for Solving the Problems) In order to solve the above problems, the present invention forms a mixer diode on a semiconductor substrate having a heterojunction.
（作 用）
上記の構成により、ヘテロ接合面に発生する２次元電子
ガスにより，低抵抗層を実現するので，ミキサ・ダイオ
ードの陽極と陰極間の直列抵抗ｒ，が１／２以下になり
、これに伴い変換損失および雑音指数も１７２以下に下
がる。(Function) With the above configuration, a low resistance layer is realized by the two-dimensional electron gas generated at the heterojunction surface, so the series resistance r, between the anode and cathode of the mixer diode becomes 1/2 or less, Along with this, the conversion loss and noise figure are also reduced to 172 or less.
（実施例）
本発明の実施例２例をそれぞれ第１図（ａ）および（ｂ
）により説明する．
第１図（ａ）は、本発明の第１の実施例を示す要部拡大
断面図で、ＭＭＩＣの中のミキサ・ダイオードは，半絶
縁性ＧａＡｓ基板１０の表面にＡ Ｑ ｘＧ ａよーｘ
Ａｓ活性層１１を形成した上に、ショットキー電極ｌ２
を中にしてこれを２個のオーミック電極ｌ３で挾んで形
或するものである。なお、上記の半絶縁性Ｇ ａ Ａ
ｓ基板１０とＡ ＱｘＧ ａ， ＋ｘ Ａ ｓ活性層１
１の接合面は、いわゆるヘテロ接合面で、バンド幅の相
異から２次元電子ガスが発生するため、低抵抗層が形或
される。従って、ショットキー電極Ｉ２とオーミック電
極ｌ３の間、すなわち，ｒｍ極と陰極の間を流れる電流
は、このヘテロ接合面１４を流れるため、抵抗が極めて
小さい。(Example) Two examples of the present invention are shown in FIGS. 1(a) and (b), respectively.
). FIG. 1(a) is an enlarged sectional view of a main part showing a first embodiment of the present invention.
A Schottky electrode l2 is formed on the As active layer 11.
It is formed by sandwiching this between two ohmic electrodes l3. In addition, the above semi-insulating G a A
s substrate 10 and A QxG a, +x A s active layer 1
The junction surface of No. 1 is a so-called heterojunction surface, and a two-dimensional electron gas is generated due to the difference in band width, so that a low resistance layer is formed. Therefore, the current flowing between the Schottky electrode I2 and the ohmic electrode I3, that is, between the rm pole and the cathode, flows through this heterojunction surface 14, so that the resistance is extremely small.
上記のＡＱｘＧａ１−ｘＡｓ活性層１１の混晶比Ｘは、
０．２ないし０．３が適当で，通常、分子線エビタキシ
ャル成長（ＭＢＥ）法あるいはメタルオーガニツク化学
的気相或艮（ＭＯＣＶＤ）法によって形或する。The mixed crystal ratio X of the above AQxGa1-xAs active layer 11 is:
0.2 to 0.3 is suitable and is usually formed by molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD).
なお、電極ｌ２および１３の材質は、従来例と変らない
。Note that the materials of the electrodes 12 and 13 are the same as in the conventional example.
第工図（ｂ）は，本発明による第２の実施例を示す要部
拡大断面図で、本実施例が第１の実施例と異なる点は．
Ａ ＱｘＧ ａ１＋ｘ Ａ ｓ活性層ｌ１の上に重ね
て形或したＧａＡｓ活性層１５に、ショットキー電極１
２は直接、オーミック電極１３は，イオン注入を施した
ｎゝＧａＡｓ層１６の表面にそれぞれ形成した点である
．その他は変らないので、同じ構或部位に対しては同一
符号を付して，その説明を省略する。The second engineering drawing (b) is an enlarged sectional view of a main part showing a second embodiment of the present invention, and the differences between this embodiment and the first embodiment are as follows.
A Schottky electrode 1 is placed on the GaAs active layer 15 formed over the active layer l1.
2 is that the ohmic electrode 13 is formed directly on the surface of the ion-implanted nGaAs layer 16. Since the rest remains the same, the same components are designated by the same reference numerals and their explanations will be omitted.
このような構或により、ｎ ” Ｇ ａ Ａ ｓ層１６
によって、オーミック電極１３の接触抵抗を小さくし、
ショットキー電極ｌ２の耐圧性を向上することができる
．なお、第２の実施例では、Ｇ ａ Ａ ｓ活性層ｌ５
とＡＱｘＧａｉ−ｘＡｓ活性層１ｌの間にヘテロ接合面
１４は存在するが、フェルミ準位の位置の関係で、２次
元電子ガスは存在しない。With such a structure, the n ” Ga As layer 16
By reducing the contact resistance of the ohmic electrode 13,
The voltage resistance of the Schottky electrode l2 can be improved. Note that in the second embodiment, the GaAs active layer l5
Although a heterojunction surface 14 exists between the AQxGai-xAs active layer 11 and the AQxGai-xAs active layer 1l, two-dimensional electron gas does not exist due to the position of the Fermi level.
なお、本実施例では，ミキサ・ダイオードを例に説明し
てきたが、このヘテロ接合半導体基板を用いることによ
り、ミキサ・ダイオードの他に、高電子移動度トランジ
スタ（Ｈ Ｅ Ｍ Ｔ）や、ヘテｏ・バイポーラトラン
ジスタ（Ｈ Ｂ Ｔ）等がこの同一基板上に形或できる
ので、極めて集積度の高い、低雑音のＭＭＩＣが形或で
きる。Although this embodiment has been explained using a mixer diode as an example, by using this heterojunction semiconductor substrate, it can be used not only for mixer diodes but also for high electron mobility transistors (HEMT) and heterojunction semiconductor substrates. - Since a bipolar transistor (HBT) etc. can be formed on this same substrate, an extremely highly integrated and low noise MMIC can be formed.
また、半絶縁性Ｇ ａ Ａ ｓ基板ＩＯとＡ Ｑｘ Ｇ
ａ１＋Ｘ Ａ ｓ活性層１１の組合せで説明してきた
が、Ｓｉ基板とＳｉＣ層の組合せ等、他のへテロ接合を
用いた半導体基板でも同一の効果が得られることはいう
までもない．また、ＭＭＩＣで説明してきたが，一般の
集積回路すべてにあてはまることはいうまでもない。ま
た、ミキサ・ダイオードのみならず、変調，復調用ダイ
オードにも成り立つことももちろんである。In addition, semi-insulating G a A s substrate IO and A Qx G
Although the combination of a1+XAs active layer 11 has been described, it goes without saying that the same effect can be obtained with other semiconductor substrates using heterojunctions, such as a combination of a Si substrate and a SiC layer. Further, although the explanation has been made using MMIC, it goes without saying that it applies to all general integrated circuits. Moreover, it goes without saying that it can be used not only as a mixer diode but also as a modulation and demodulation diode.
（発明の効果）
以上説明したように、本発明によれば、ＭＭＩＣの中の
ミキサ・ダイオードは、ヘテロ接合に発生する２次元電
子ガスにより、その直列抵抗が従来の１７２以下に下が
り、これに伴い，ミキサ・ダイオードの変換損失や雑音
指数が１／２以下に下がり，極めて集積度の高い低雑音
のマイクロ波用の半導体集積回路（ＭＭＩＣ）が得られ
る。(Effects of the Invention) As explained above, according to the present invention, the series resistance of the mixer diode in the MMIC is reduced to 172 or less compared to the conventional one due to the two-dimensional electron gas generated in the heterojunction. Accordingly, the conversion loss and noise figure of the mixer diode are reduced to 1/2 or less, and a microwave semiconductor integrated circuit (MMIC) with extremely high integration and low noise can be obtained.
第１図（ａ）および（ｂ）は，共に本発明によるＭＭＩ
Ｃ中のミキサ・ダイオードを示す要部拡大断面図、第２
図は従来の単体のミキサ・ダイオードの要部拡大断面図
、第３図は従来の集積回路に用いられるミキサ・ダイオ
ードの要部拡大断面図である。
１−ｎ”ＧａＡｓ基板． ２，７．１５・・・Ｇａ
Ａｓ活性層，３，８．１２・・・ショットキー電極、
４，９．１３・・・オーミック電極、５，１０・・・半
絶縁性ＧａＡｓ基板、 ６ ． １６＝−・ｎ”ＧａＡ
ｓ層、 ＬＬ・・・ＡＱｚＧａｌ−ｘＡｓ活性層、１４
・・・ヘテロ接合面。FIGS. 1(a) and (b) both show the MMI according to the present invention.
Enlarged cross-sectional view of main parts showing mixer diode in C, 2nd
The figure is an enlarged sectional view of the main part of a conventional single mixer diode, and FIG. 3 is an enlarged sectional view of the main part of a conventional mixer diode used in an integrated circuit. 1-n” GaAs substrate. 2,7.15...Ga
As active layer, 3, 8.12... Schottky electrode,
4,9.13...Ohmic electrode, 5,10...Semi-insulating GaAs substrate, 6. 16=-・n”GaA
s layer, LL...AQzGal-xAs active layer, 14
...Heterojunction surface.
Claims (1)
テロ接合を有する半導体基板上に形成したことを特徴と
する半導体集積回路。A semiconductor integrated circuit characterized in that at least one of various elements including a mixer diode is formed on a semiconductor substrate having a heterojunction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1149330A JPH0316179A (en) | 1989-06-14 | 1989-06-14 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1149330A JPH0316179A (en) | 1989-06-14 | 1989-06-14 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0316179A true JPH0316179A (en) | 1991-01-24 |
Family
ID=15472752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1149330A Pending JPH0316179A (en) | 1989-06-14 | 1989-06-14 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0316179A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006038390A1 (en) * | 2004-09-30 | 2006-04-13 | Sanken Electric Co., Ltd. | Semiconductor device |
| US9257528B2 (en) | 2010-12-17 | 2016-02-09 | Samsung Electronics Co., Ltd. | Graphene electronic device and method of fabricating the same |
-
1989
- 1989-06-14 JP JP1149330A patent/JPH0316179A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006038390A1 (en) * | 2004-09-30 | 2006-04-13 | Sanken Electric Co., Ltd. | Semiconductor device |
| US7692298B2 (en) | 2004-09-30 | 2010-04-06 | Sanken Electric Co., Ltd. | III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact |
| US9257528B2 (en) | 2010-12-17 | 2016-02-09 | Samsung Electronics Co., Ltd. | Graphene electronic device and method of fabricating the same |
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