JPH0315975B2 - - Google Patents
Info
- Publication number
- JPH0315975B2 JPH0315975B2 JP58149483A JP14948383A JPH0315975B2 JP H0315975 B2 JPH0315975 B2 JP H0315975B2 JP 58149483 A JP58149483 A JP 58149483A JP 14948383 A JP14948383 A JP 14948383A JP H0315975 B2 JPH0315975 B2 JP H0315975B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- electrode
- hydrogen
- voltage
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 21
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 9
- 230000003197 catalytic effect Effects 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 31
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 17
- 230000008859 change Effects 0.000 description 11
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Description
【発明の詳細な説明】
本発明は、触媒金属でイオン化された水素の注
入により電気特性の変化を作り出す半導体ガスセ
ンサに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor gas sensor that produces a change in electrical properties by injection of ionized hydrogen with a catalytic metal.
従来、SnO2，ZnOなどの金属酸化物半導体の
電気伝導度が還元性ガスの吸着により変化する性
質は広く知られガスセンサとして実用化されてい
るが、ガスの接触による導電度の変化を検出する
ために高温に加熱した状態で使用され、安全性お
よび安定性の点で問題がある。 Conventionally, the property that the electrical conductivity of metal oxide semiconductors such as SnO 2 and ZnO changes due to the adsorption of reducing gases has been widely known and has been put into practical use as gas sensors. Therefore, it is used heated to high temperatures, which poses problems in terms of safety and stability.
一方、常温で使用できる半導体センサとして、
半導体へのガス吸着による表面電位や界面の電位
障壁の変化を利用するセンサの研究も進められて
おり、この種の半導体ガスセンサとしては、
MOSFET型ガスセンサとダイオード型ガスセン
サが知られている。 On the other hand, as a semiconductor sensor that can be used at room temperature,
Research is also progressing on sensors that utilize changes in surface potential and interface potential barriers due to gas adsorption on semiconductors, and this type of semiconductor gas sensor includes:
MOSFET type gas sensors and diode type gas sensors are known.
MOSFET方ガスセンサは、スエーデンの
Lundstr¨ｏｍ等により1975年に発表されたもの
で、一般のMOSFETと同じ構造を有し、弱いｐ
型性シリコン基板上に10μm程度の距離をおいて
２つのｎ型領域を形成してソースおよびドレイン
とし、その表面に数千Åの厚さのSiO2の絶縁層
を作り、更に絶縁層の上に触媒金属としてのパラ
ジウムPdを蒸着してゲート電極としたもので、
ゲート電極がガスに感応することによるゲート作
用の変化を利用している。 The MOSFET gas sensor is from Sweden.
It was announced in 1975 by Lundström et al. It has the same structure as a general MOSFET, and has a weak p
Two n-type regions are formed on a silicon substrate with a distance of about 10 μm to serve as a source and a drain, an insulating layer of SiO 2 several thousand Å thick is formed on the surface, and then an insulating layer is formed on the insulating layer. The gate electrode is made by depositing palladium Pd as a catalytic metal on the
It utilizes the change in gate action caused by the gate electrode being sensitive to gas.
また、ダイオード型のガスセンサは、GE社の
Steele等により1976年に提案され、インジウムを
ドープしたCdSの上に半径0.1cm、厚さ800Åのバ
ラジウムを蒸着したダイオードを作り、このダイ
オードの電流−電圧特性が空気中の微量の水素ガ
スにより大きく変化することを示している。 In addition, diode type gas sensors are manufactured by GE.
Proposed by Steele et al. in 1976, a diode with a radius of 0.1 cm and a thickness of 800 Å was fabricated on indium-doped CdS, and the current-voltage characteristics of this diode were greatly increased by the trace amount of hydrogen gas in the air. It shows that things change.
しかしながら、MOSFET型およびダイオード
型ガスセンサのいずれも未だ実験室的な開発段階
にあり、しかも水素ガスの接触による電気特性の
変化については、双極子層による説明、あるいは
表面準位による説明がなされているが必ずしも明
らかでなく、前記以外の化合物半導体の使用によ
る半導体ガスセンサの開発研究が進められてい
る。 However, both MOSFET-type and diode-type gas sensors are still in the laboratory development stage, and changes in electrical characteristics due to contact with hydrogen gas are explained by dipole layers or surface states. is not necessarily clear, and research and development is underway to develop semiconductor gas sensors using compound semiconductors other than those mentioned above.
本発明は、このような状況に鑑みてなされたも
ので、触媒金属で解離吸着された水素原子が化合
物半導体を還元して電気特性の変化を起すという
知見に基づき、化合物半導体として三酸化タング
ステンを使用して還元性ガスを常温で検出するこ
とのできる半導体ガスセンサを提供することを目
的とする。 The present invention was made in view of this situation, and is based on the knowledge that hydrogen atoms dissociated and adsorbed by a catalyst metal reduce a compound semiconductor and cause a change in electrical characteristics. An object of the present invention is to provide a semiconductor gas sensor that can be used to detect reducing gases at room temperature.
この目的を達成するため本発明は、ガラス基板
等の絶縁基板上に導電膜、三酸化タングステン
WO3、および触媒金属を用いた電極を順次積層
し、導電膜および電極の各々より取出した電極リ
ード間に定電圧または定電流バイアスを掛けるこ
とにより、水素ガス、もしくはNH3，H2S，
SiH4等の還元性ガスの接触で電流−電圧特性の
変化が得られるようにしたものである。 In order to achieve this object, the present invention provides a conductive film and a tungsten trioxide film on an insulating substrate such as a glass substrate.
By sequentially stacking electrodes using WO 3 and a catalytic metal, and applying a constant voltage or constant current bias between the electrode leads taken out from the conductive film and the electrodes, hydrogen gas, NH 3 , H 2 S,
The current-voltage characteristics can be changed by contact with a reducing gas such as SiH 4 .
以下、本発明の実施例を図面に基づいて説明す
る。 Embodiments of the present invention will be described below based on the drawings.
第１図は、本発明の半導体センサの一実施例を
示した構造説明図である。 FIG. 1 is a structural explanatory diagram showing an embodiment of the semiconductor sensor of the present invention.
まず、構成を説明すると、１は絶縁基板となる
ガラス基板であり、ガラス基板１上に例えば
In2O3等を用いた電極の導電膜２を蒸着し、更に
導電膜２の上に化合物半導体として三酸化タング
ステンWO3層３を蒸着により形成し、この三酸
化タングステンWO3層３の表面に触媒金属とし
てパラジウムPdを用いた電極４を形成し、導電
膜２および電極４のそれぞれより電極リード５，
６を取り出している。 First, to explain the configuration, 1 is a glass substrate serving as an insulating substrate, and on the glass substrate 1, for example,
A conductive film 2 of an electrode using In 2 O 3 or the like is deposited, and then a tungsten trioxide WO 3 layer 3 is formed as a compound semiconductor on the conductive film 2 by evaporation, and the surface of this tungsten trioxide WO 3 layer 3 is An electrode 4 using palladium Pd as a catalyst metal is formed on the electrode 4, and electrode leads 5,
6 is taken out.
次に、第１図の実施例に示す本発明の半導体ガ
スセンサの電流−電圧特性は第２図のグラフ図に
示すようになる。 Next, the current-voltage characteristics of the semiconductor gas sensor of the present invention shown in the embodiment of FIG. 1 are as shown in the graph of FIG. 2.
この第２図に示す電流−電圧特性はダイオード
と同じであり、ガスセンサに対し、水素ガスの接
触がない状態、例えば空気中に置いたときには曲
線Ａで示されるダイオードと略等価な電流−電圧
特性が得られ、水素ガスの濃度を増加させると、
ガス濃度の増加に応じて曲線Ｂ，Ｃのように特性
が変化し、最終的に単なる抵抗体としての特性Ｃ
に達する。 The current-voltage characteristics shown in Figure 2 are the same as those of a diode, and when the gas sensor is placed in a state where there is no contact with hydrogen gas, for example in the air, the current-voltage characteristics shown by curve A are approximately equivalent to those of the diode. is obtained, and increasing the concentration of hydrogen gas,
As the gas concentration increases, the characteristics change as shown by curves B and C, and finally the characteristic C as a mere resistor changes.
reach.
Ａ：水素が含まれない状態
Ｂ：水素濃度が数百〜数千PPMの状態
Ｃ：水素濃度が％オーダーの状態
この第２図に示す水素ガスの接触による電流−
電圧特性の変化の理由は必ずしも明らかではない
が、化合物半導体として三酸化タングステン
WO3を使用することにより水素ガスが接触した
ときに三酸化タングステンWO3層が青色に変色
し、この青色への変色は水素原子による還元作用
に基づくことから、触媒金属Pdを用いた電極４
で生成された水素原子が三酸化タングステン
WO3層３に注入されていることが明らかであり、
WO3に対する水素原子の注入で、第２図に示す
電流−電圧特性の変化が起ると考えられる。A: A state in which no hydrogen is contained B: A state in which the hydrogen concentration is several hundred to several thousand ppm C: A state in which the hydrogen concentration is on the order of % The current due to contact with hydrogen gas shown in Fig. 2 -
The reason for the change in voltage characteristics is not necessarily clear, but tungsten trioxide as a compound semiconductor
By using WO 3 , the tungsten trioxide WO 3 layer turns blue when it comes into contact with hydrogen gas, and this blue color change is based on the reduction action of hydrogen atoms, so electrode 4 using catalytic metal Pd
Hydrogen atoms generated in tungsten trioxide
It is clear that WO 3 is injected into layer 3,
It is thought that the injection of hydrogen atoms into WO 3 causes the change in current-voltage characteristics shown in FIG. 2.
第３図は、第１図の実施例に示す半導体センサ
を用いたガス検出の基本回路を示したもので、定
電圧源７により半導体センサ８の電極リード５，
６間に一定電圧Vcをバイアス電圧として印加し
たもので、バイアス電圧が一定であることから、
第２図の特性グラフ図から水素ガスの接触に対す
る特性曲線の変化から明らかなように、ガス濃度
の増加に応じて電流Isが増加する第４図のグラフ
図に示す検出特性が得られ、電流Isからガス濃度
を知ることができる。 FIG. 3 shows a basic circuit for gas detection using the semiconductor sensor shown in the embodiment shown in FIG.
6, a constant voltage Vc is applied as a bias voltage, and since the bias voltage is constant,
As is clear from the change in the characteristic curve in response to contact with hydrogen gas from the characteristic graph in Figure 2, the detection characteristics shown in the graph in Figure 4, in which the current Is increases as the gas concentration increases, are obtained, and the current Gas concentration can be determined from Is.
第５図は、第１図の半導体センサを用いた他の
基本回路を示したもので、半導体センサ８のリー
ド端子５，６間に定電流源９を接続したもので、
半導体センサ８に一定電流Icを流すことにより、
第６図に示すように水素ガスの濃度の増加に対
し、半導体センサ８のリード端子５，６間の電圧
Vsが減少し、電圧Vsからガス濃度を知ることが
できる。 FIG. 5 shows another basic circuit using the semiconductor sensor of FIG. 1, in which a constant current source 9 is connected between the lead terminals 5 and 6 of the semiconductor sensor 8.
By passing a constant current Ic through the semiconductor sensor 8,
As shown in FIG. 6, as the concentration of hydrogen gas increases, the voltage between the lead terminals 5 and 6 of the semiconductor sensor 8 increases.
Vs decreases, and the gas concentration can be determined from the voltage Vs.
尚、第３，５図の基本回路において、リード端
子５，６に対する電圧極性としては、電極４に接
続した電極リード６側をプラス、導電膜２に接続
した電極リード５側をマイナスとした第２図にお
ける第１象限の特性よりは、逆に電極リード５側
をプラス、電極リード６側をマイナスとした第２
図の第３象限における特性の方が水素ガスの接触
に対し、顕著な特性変化が得られることが実験的
に確認されている。従つて、第３，５図の基本回
路においては、電極リード５側をプラス、電極リ
ード６側をマイナスとなるように定電圧源７もし
くは定電流源９を接続することが望ましい。 In the basic circuits shown in FIGS. 3 and 5, the voltage polarity for the lead terminals 5 and 6 is set such that the electrode lead 6 side connected to the electrode 4 is positive and the electrode lead 5 side connected to the conductive film 2 is negative. In contrast to the characteristics of the first quadrant in Figure 2, the second quadrant with the electrode lead 5 side positive and the electrode lead 6 side negative
It has been experimentally confirmed that the characteristics in the third quadrant of the figure show a more significant change in characteristics upon contact with hydrogen gas. Therefore, in the basic circuits shown in FIGS. 3 and 5, it is desirable to connect the constant voltage source 7 or the constant current source 9 so that the electrode lead 5 side is positive and the electrode lead 6 side is negative.
また、上記の実施例は電極４を形成する触媒金
属としてPdを用いたが、この他に同様な触媒活
性作用を有する金Au、白金Pt、ニツケルNi等を
使用してもよく、また、被検知ガスとしては上記
の水素ガスの他にアンモニアガスNH3、シラン
ガスSiH4、硫化水素ガスH2S等の、水素を容易
に解離する還元性ガスに対しても同様な電気特性
の変化としてガス濃度を検出することができる。 In addition, although Pd was used as the catalyst metal forming the electrode 4 in the above embodiment, other metals such as gold Au, platinum Pt, and nickel Ni, which have similar catalytic activity, may also be used. In addition to the above-mentioned hydrogen gas, detection gases include ammonia gas NH 3 , silane gas SiH 4 , hydrogen sulfide gas H 2 S, and other reducing gases that easily dissociate hydrogen. Concentration can be detected.
なお、メタン、エタン、プロパンは水素を解離
しにくいので、あまり有効ではない。 Note that methane, ethane, and propane are not very effective because they are difficult to dissociate hydrogen.
次に、本発明の効果を説明すると、絶縁基板上
に導電膜、三酸化タングステンWO3および触媒
金属を用いた電極を順次積層し、導電膜および電
極の各々より電極リードを取り出すようにしたた
め、SnO2，ZnO等の金属酸化物半導体を用いた
ガスセンサのように加熱する必要がなく、常温で
還元性ガスの接触により電気特性の変化が得られ
るため、燃焼性、爆発性の被検知ガスに対し、本
質的に安全構造を実現することができ、また常温
でそのまま使用できることから、素子の耐久性と
安全性を保証することができる。また、センサ構
造自体が従来のダイオードに近似した構造である
ことから量産化が容易であり、高い製造歩留まり
を得ることができる。 Next, to explain the effects of the present invention, a conductive film, an electrode using tungsten trioxide WO 3 and a catalyst metal are sequentially laminated on an insulating substrate, and electrode leads are taken out from each of the conductive film and the electrode. Unlike gas sensors that use metal oxide semiconductors such as SnO 2 and ZnO, there is no need for heating, and the electrical characteristics can be changed by contact with reducing gas at room temperature, making it suitable for combustible and explosive gases. On the other hand, since it is possible to realize an inherently safe structure and can be used as is at room temperature, the durability and safety of the element can be guaranteed. Furthermore, since the sensor structure itself is similar to a conventional diode, mass production is easy and a high manufacturing yield can be achieved.
第１図は本発明の一実施例を示した構造説明
図、第２図は本発明のガス接触に対する電流−電
圧特性の変化を示したグラフ図、第３図は定電圧
バイアスによる本発明の基本回路を示した回路
図、第４図は第３図の基本回路による検出特性を
示したグラフ図、第５図は定電流バイアスによる
本発明の基本回路を示した回路図、第６図は第５
図の基本回路による検出特性を示したグラフ図で
ある。
１：ガラス基板、２：導電膜、３：三酸化タン
グステンWO3層、４：電極、５，６：電極リー
ド、７：定電圧源、８：半導体ガスセンサ、９：
定電流源。
Fig. 1 is a structural explanatory diagram showing one embodiment of the present invention, Fig. 2 is a graph showing changes in current-voltage characteristics due to gas contact of the present invention, and Fig. 3 is a diagram showing the change in current-voltage characteristics due to constant voltage bias. A circuit diagram showing the basic circuit, FIG. 4 is a graph showing the detection characteristics of the basic circuit of FIG. 3, FIG. 5 is a circuit diagram showing the basic circuit of the present invention using constant current bias, and FIG. Fifth
FIG. 3 is a graph diagram showing detection characteristics by the basic circuit shown in the figure. 1: Glass substrate, 2: Conductive film, 3: Tungsten trioxide WO 3 layer, 4: Electrode, 5, 6: Electrode lead, 7: Constant voltage source, 8: Semiconductor gas sensor, 9:
Constant current source.
Claims (1)
WO3、及び触媒金属を用いた電極を順次積層し、
前記電極および触媒金属の各々より電極リードを
取出したことを特徴とする半導体ガスセンサ。1 Electrode, tungsten trioxide on an insulating substrate
WO 3 and electrodes using catalytic metal are sequentially stacked,
A semiconductor gas sensor characterized in that electrode leads are taken out from each of the electrode and the catalyst metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14948383A JPS6040945A (en) | 1983-08-16 | 1983-08-16 | Semiconductor gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14948383A JPS6040945A (en) | 1983-08-16 | 1983-08-16 | Semiconductor gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6040945A JPS6040945A (en) | 1985-03-04 |
| JPH0315975B2 true JPH0315975B2 (en) | 1991-03-04 |
Family
ID=15476134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14948383A Granted JPS6040945A (en) | 1983-08-16 | 1983-08-16 | Semiconductor gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6040945A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003329592A (en) * | 2002-05-08 | 2003-11-19 | Shinji Okazaki | Method for manufacturing film for gas sensor |
| WO2007116919A1 (en) * | 2006-04-04 | 2007-10-18 | Japan Atomic Energy Agency | Hydrogen gas detecting material and method for coating same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004013678A1 (en) * | 2004-03-18 | 2005-10-20 | Micronas Gmbh | Device for detecting a gas or gas mixture |
| WO2021210453A1 (en) * | 2020-04-16 | 2021-10-21 | ヌヴォトンテクノロジージャパン株式会社 | Hydrogen sensor, hydrogen detection method, and hydrogen detection device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5774648A (en) * | 1980-08-28 | 1982-05-10 | Siemens Ag | Selective thin film gas sensor and manufacture thereof |
-
1983
- 1983-08-16 JP JP14948383A patent/JPS6040945A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5774648A (en) * | 1980-08-28 | 1982-05-10 | Siemens Ag | Selective thin film gas sensor and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003329592A (en) * | 2002-05-08 | 2003-11-19 | Shinji Okazaki | Method for manufacturing film for gas sensor |
| WO2007116919A1 (en) * | 2006-04-04 | 2007-10-18 | Japan Atomic Energy Agency | Hydrogen gas detecting material and method for coating same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6040945A (en) | 1985-03-04 |
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