JPH03158453A - Formation of tial compound layer - Google Patents
Formation of tial compound layerInfo
- Publication number
- JPH03158453A JPH03158453A JP29545689A JP29545689A JPH03158453A JP H03158453 A JPH03158453 A JP H03158453A JP 29545689 A JP29545689 A JP 29545689A JP 29545689 A JP29545689 A JP 29545689A JP H03158453 A JPH03158453 A JP H03158453A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- tial
- compound layer
- spraying
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 title abstract description 3
- 229910010038 TiAl Inorganic materials 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000007750 plasma spraying Methods 0.000 claims abstract description 13
- 238000007751 thermal spraying Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 abstract description 11
- 239000007789 gas Substances 0.000 abstract description 7
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 229910000765 intermetallic Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- 230000006837 decompression Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011812 mixed powder Substances 0.000 description 2
- 238000010290 vacuum plasma spraying Methods 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910021330 Ti3Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000010275 isothermal forging Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はＴｉＡｌ系化合物層の形成方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for forming a TiAl-based compound layer.
［従来の技術］
Ｔｉ−Ａｌ２元系において、常温における４９〜５５原
子％Ａ１の組成域において、金属間化合物Ｔ ｉ Ａ
ｌが存在する。このＴｉＡｌ金属間化合物は、比重が小
さく、高温強度、耐酸化性に優れているため、軽量の耐
熱材料として、有望視されている。[Prior art] In the Ti-Al binary system, in the composition range of 49 to 55 at.% A1 at room temperature, the intermetallic compound T i A
l exists. This TiAl intermetallic compound has a low specific gravity and is excellent in high-temperature strength and oxidation resistance, so it is considered promising as a lightweight heat-resistant material.
しかしながら、このＴｉＡｌ金属間化合物は、池の金属
間化合物と同様に、通常の金属や合金にくらべて脆く、
常温延性に乏しく、まだ本格的に実用化されていない、
そのため、比較的延性の出やすいＴｉ寄りのＴｉＡｌ＋
Ｔｉ、Ａｔ相境界に近い組成の化合物を中心に、延性を
改良する研究が続けられている。However, this TiAl intermetallic compound, like the pond intermetallic compound, is more brittle than ordinary metals and alloys.
It has poor room temperature ductility and has not yet been put into practical use.
Therefore, TiAl+, which is closer to Ti and is relatively more ductile,
Research is continuing to improve ductility, focusing on compounds with compositions close to the Ti and At phase boundaries.
また、Ｔ１は溶融状態で非常に活性な金属であるため、
カルシア製のるつぼを用い真空誘導溶解する方法が提案
されており（特開昭６１−２２３１７２号公報）、Ｔ
ｉ Ａ ｌが難加工性であるため、ＡＩおよびＴｉの粉
体温合物を密封容器中で成形した後焼結する粉末冶金の
手法が提案されている（特開昭６２−７０５３１号公報
）、さらに、ＴｉＡ金属間化合物の加工方法として、耐
熱合金からなるシース材を用いた恒温鍛造法が提案され
ている（特開昭６１−２１３３６１号公報）。In addition, since T1 is a very active metal in the molten state,
A vacuum induction melting method using a calcia crucible has been proposed (Japanese Patent Application Laid-open No. 61-223172), and T.
Since iAl is difficult to process, a powder metallurgy method has been proposed in which a powder mixture of AI and Ti is molded in a sealed container and then sintered (Japanese Patent Laid-Open No. 70531/1983). Furthermore, as a method for processing TiA intermetallic compounds, an isothermal forging method using a sheath material made of a heat-resistant alloy has been proposed (Japanese Patent Application Laid-Open No. 61-213361).
［発明が解決しようとする課題］
そこで、ＴｉＡｌ系金属問化合物の高温強度および耐酸
化性を利用する方法として、部材の表面にＴｉＡｌ系金
属間化合物を金属溶射により盛金する方法が考えられる
。しかしながら、部材の表面にＴ ｉ Ａ １層を金属
溶射により盛金するには、高価なＴ ｉ Ａ ｌ粉末を
用いる必要があり、その場合にはＴｉＡｌの組成および
量を容易に変えることが困難であるため、盛金の条件を
うまくコントロールしないと割れが生じるという欠点が
あった。[Problems to be Solved by the Invention] Therefore, as a method of utilizing the high-temperature strength and oxidation resistance of the TiAl-based intermetallic compound, a method of depositing the TiAl-based intermetallic compound on the surface of the member by metal spraying can be considered. However, in order to deposit a single layer of TiAl on the surface of a component by metal spraying, it is necessary to use expensive TiAl powder, and in that case, it is difficult to easily change the composition and amount of TiAl. Therefore, there was a drawback that cracks would occur unless the conditions of the deposit were well controlled.
本発明は、部材の表面にＴ ｉ Ａ Ｉ系化合物層を形
成する方法における前記のごとき問題点に鑑みてなされ
たものであって、Ｔ ｉ Ａ ｌ粉末を用いずに組成範
囲および盛金量を容易にコントロールすることのできる
Ｔ ｉ Ａ Ｉ系化合物層の形成方法を提供することを
目的とする。The present invention has been made in view of the above-mentioned problems in the method of forming a T i A I compound layer on the surface of a member, and it is possible to easily change the composition range and the amount of metal deposit without using T i A I powder. It is an object of the present invention to provide a method for forming a T i A I-based compound layer that can be controlled.
［課題を解決するための手段］
本発明のＴ ｉ Ａ Ｉ系化合物層の形成方法は、重量
比で７〜４３％のＡ１粉末を含有するＴｉ粉末を溶射材
料として、減圧プラズマ溶射することを要旨とする。[Means for Solving the Problems] The method for forming a TiA I-based compound layer of the present invention includes low-pressure plasma spraying using Ti powder containing 7 to 43% A1 powder by weight as a spraying material. This is the summary.
溶射材料として用いるＴｉ粉末に混合するＡ１粉末量が
重量比が７％未満であるとＴ ｉ Ａ ｌ系化合物は殆
ど生成しない、また、Ａ１粉末の重量比が４３％を越え
ると、生成した化合物にＡ１が残存し、ＴｉＡｌ皮膜の
耐摩耗性等の特性を著しく劣化させて好ましくない、な
お、Ａ１量３６％以下ではＴｉが残存しているが、これ
は適度に混在することで、ＴｉＡｌ皮膜の靭性改善に有
効と考えられる。If the weight ratio of the A1 powder mixed with the Ti powder used as a thermal spraying material is less than 7%, hardly any TiAl-based compounds will be produced, and if the weight ratio of the A1 powder exceeds 43%, the produced compounds will be A1 remains in the TiAl film, which is undesirable because it significantly deteriorates the properties such as wear resistance of the TiAl film.In addition, if the A1 amount is 36% or less, Ti remains, but if it is mixed in a moderate amount, the TiAl film It is considered to be effective in improving the toughness of
減圧プラズマ溶射は、溶射ガン、基材移動装置および基
材を、減圧無酸素状態に制御できる減圧室内に組み込ん
でプラズマ溶射を行う従来から公知の減圧プラズマ溶射
装置を用いて行う。Low-pressure plasma spraying is performed using a conventionally known low-pressure plasma spraying apparatus that performs plasma spraying by incorporating a thermal spray gun, a substrate moving device, and a substrate into a reduced-pressure chamber that can be controlled to a reduced-pressure, oxygen-free state.
減圧プラズマ溶射を行う際の減圧室の内圧は、２０ＫＰ
ａ（１５０Ｌｏｒｒ）以下とすることが好ましい、減圧
室の内圧が２０ＫＰａより高い場合は、生成した皮膜が
ポーラスとなり、密着性が悪くなる。Ｘ圧室の内圧は、
低く・なればなる程、液滴の温度が上がり、Ｔ ｉ Ａ
Ｉ皮膜の生成には有利である。The internal pressure of the vacuum chamber when performing vacuum plasma spraying is 20KP.
If the internal pressure of the decompression chamber is preferably higher than 20 KPa, the resulting film becomes porous and the adhesion deteriorates. The internal pressure of the X-pressure chamber is
The lower the temperature, the higher the temperature of the droplet, and T i A
It is advantageous for the production of I films.
また、プラズマ溶射を行う基材の移動速度が小さくなれ
ばなる程、減圧室の内圧が低くなればなる程、基材の温
度は上昇するが、減圧プラズマ溶射時においては、基材
の温度は６３０℃以上に保つ必要がある。基材の温度が
６３０℃未満であると、ＴｉＡｌ系化合物は殆ど生成さ
れない、従って、減圧プラズマ溶射に際しては、基材移
動速度、基材冷却方法、減圧室の内圧を適宜に選択して
、基材の温度を６３０℃以上に保つことが好ましい。In addition, the slower the moving speed of the base material subjected to plasma spraying and the lower the internal pressure of the vacuum chamber, the higher the temperature of the base material will be. It is necessary to maintain the temperature at 630°C or higher. If the temperature of the substrate is less than 630°C, hardly any TiAl-based compounds will be produced. Therefore, during vacuum plasma spraying, the substrate moving speed, substrate cooling method, and internal pressure of the vacuum chamber should be appropriately selected to control the substrate temperature. It is preferable to maintain the temperature of the material at 630°C or higher.
プラズマ生成のための雰囲気ガスとしては、ＡｒとＨ７
の混合ガスまたはそれぞれの単独ガスを用いることがで
きる。混合ガスの混合比は特に制約はないが、Ｈ２が多
くなればプラズマ温度が上昇するため、ＴｉＡｌ皮膜の
生成には有利である。しかし、Ａ「単独でも、装置の出
力を上げれば十分に可能である。Ar and H7 are used as atmospheric gases for plasma generation.
A mixture of these gases or each gas alone can be used. Although there are no particular restrictions on the mixing ratio of the mixed gas, an increase in H2 increases the plasma temperature, which is advantageous for forming a TiAl film. However, A alone is fully possible if the output of the device is increased.
［作用］
電極と基材の間に発生したメインアークは、作動ガスと
ノズルによって、収束されてプラズマ柱となる。このプ
ラズマ柱の中へＡＩｌ粉末混合したＴｉ粉末を供給して
溶融し、さらにプラズマアークにより、基材表面に溶融
溶着させる。[Operation] The main arc generated between the electrode and the base material is converged into a plasma column by the working gas and the nozzle. Ti powder mixed with Al powder is fed into this plasma column and melted, and further melted and welded to the surface of the base material by a plasma arc.
溶着された盛会の組成範囲は、溶射材料であるＴｉ粉末
中に混合するＡ１粉末の量によって、自由に調整するこ
とができる。また、プラズマ溶射条件あるいは減圧室の
内圧および基材の温度を適宜選択するこ乞により、Ｔｉ
Ａｌ系化合物層が盛金される。The composition range of the welded material can be freely adjusted by changing the amount of A1 powder mixed into the Ti powder, which is the thermal spray material. In addition, by appropriately selecting the plasma spraying conditions, the internal pressure of the decompression chamber, and the temperature of the substrate, Ti
An Al-based compound layer is deposited.
［実施例］
本発明の好適な実施例について説明し、本発明の効果を
明らかにする。[Example] Preferred examples of the present invention will be described to clarify the effects of the present invention.
（実施例１）
重量比で６４％の純Ｔｉおよび３６％の純Ａ１の混合粉
末を溶射材料として、第１表に示す減圧プラズマ溶射条
件で、５Ｓ４１製の基材の上に、溶射皮膜を盛合した。(Example 1) Using a mixed powder of 64% pure Ti and 36% pure A1 by weight as a thermal spray material, a thermal spray coating was formed on a 5S41 base material under the reduced pressure plasma spraying conditions shown in Table 1. There was a lot.
Ｐ＝２６．６ＫＰａ（２００ｔｏｒｒ）では、溶射皮膜
は極めてポーラスで、容易に剥離したが、Ｐ＝２０．０
ＫＰａ、１３．３ＫＰａ、６゜７ＫＰａでは、良好な皮
膜が得られた。At P=26.6 KPa (200 torr), the sprayed coating was extremely porous and easily peeled off, but at P=20.0
Good films were obtained at KPa, 13.3KPa, and 6°7KPa.
Ｐ＝２０．０ＫＰａ以下の内圧で得られた皮膜について
、その皮膜を構成する相について調べたところ、減圧室
の内圧（Ｐ）と基材の移動速度（ｖｓ）によって変化し
、生成した相は第２表に示すような結果となった。Regarding the film obtained at an internal pressure of P = 20.0 KPa or less, we investigated the phases that make up the film, and found that it changes depending on the internal pressure (P) of the vacuum chamber and the moving speed (vs) of the base material, and the generated phase The results are shown in Table 2.
（以下余白）
第２表で得られた結果より、金属間化合物の生成は、主
として基材表面で生じており、Ｐとｖｓの低下は基材温
度Ｔｓの上昇と対応し、ＴｓがＡ１の融点に近い６３０
℃以上になれば、金属間化合物が生成することが判明し
た。(Left below) From the results obtained in Table 2, the generation of intermetallic compounds mainly occurs on the substrate surface, and the decrease in P and vs corresponds to the increase in substrate temperature Ts, and Ts is higher than A1. 630 close to melting point
It has been found that intermetallic compounds are formed when the temperature exceeds ℃.
Ｐ＝６．７ＫＰａ、ｖｓ＝５ｍｍ／ｓｅｅの条件で形成
したＴ ｉ Ａ ｌ ）、Ｔ ｉ Ａ Ｉおよびα−Ｔ
ｉからなる皮膜のＸ線回折図形を第１図に１組織写真を
第２図に、高温硬さを第３図に示した。第１図のＸ線回
折図形より、Ｔ ｉ Ａ Ｉ系化合物（ＴｉＡＩ、Ｔｉ
Ａｌ５）のピークが明確に認められる。第２図の組織写
真より、基材温度の低い溶射初期に相当する基材との界
面付近は黒灰色のＴｉ相が主成分であるが、それ以外の
部分には、ＴｉＡｌ系化合物の白い相が認められる。ま
た、第３図の高温硬度を示す図より、ＴＡｌ系溶射皮膜
は同じく溶射法により製造したＴｉ溶射皮膜よりも硬さ
が高いのみならず、一般に知られている溶製法によるＴ
ｉ Ａ ｌ （常温でＨｖ約１５０〜２５０）よりも
著しく高く、急冷による微細化効果や、ＴｉＡｌ、等の
第２相の生成の効果が現れているものと思われる。T i A l ), T i A I and α-T formed under the conditions of P = 6.7 KPa, vs = 5 mm/see
The X-ray diffraction pattern of the film made of i is shown in Fig. 1, the photograph of one structure is shown in Fig. 2, and the high temperature hardness is shown in Fig. 3. From the X-ray diffraction pattern in FIG.
The peak of Al5) is clearly recognized. From the microstructure photograph in Figure 2, the main component is a black-gray Ti phase near the interface with the base material, which corresponds to the early stage of thermal spraying when the base material temperature is low, but the white phase of TiAl-based compounds is present in other parts. is recognized. Furthermore, from the diagram showing the high-temperature hardness in Figure 3, not only is the TAl sprayed coating higher in hardness than the Ti sprayed coating produced by the same thermal spraying method, but also
i A l (Hv approximately 150 to 250 at room temperature), which is considered to be due to the refinement effect due to rapid cooling and the effect of the formation of a second phase such as TiAl.
（実施例２）
Ｐ＝６．７ＫＰａ、ｖｓ＝５ｍｍ／５ｅｃＴＡＩ量組成
を重量比で１０〜４５％の範囲で変化させて、減圧プラ
ズマ溶射皮膜を作製した。生成した相をＸ線回折により
同定し、結果を第３表に示した。(Example 2) P=6.7KPa, vs=5mm/5ecTAI amount composition was varied in a range of 10 to 45% by weight to produce a reduced pressure plasma sprayed coating. The produced phase was identified by X-ray diffraction, and the results are shown in Table 3.
第 ３ 表
（）は微量
第３表の結果より、ＡＩ量５％以下では殆どＴｉＡｌ系
化合物が生成せず、またＡ１１４５％以上では大量のＡ
１が未反応で残ってしまうことが分かる。Table 3 () shows that, based on the results in Table 3, when the AI amount is less than 5%, hardly any TiAl-based compounds are produced, and when the A1 content is 45% or more, a large amount of A is produced.
It can be seen that 1 remains unreacted.
本実施例で得られた皮膜のうち、Ａ１１１０％で生成し
た皮膜のＸ線回折図形を第４図に示した。Among the films obtained in this example, the X-ray diffraction pattern of the film made of 10% A11 is shown in FIG.
（実施例３）
重量比で８０％の純Ｔｉ、１８％の純Ａ１．２％のＭｎ
からなる混合粉末を溶射材料として、Ｐ：６．７ Ｋ
Ｐａ、 ｖｓ＝ ５ｓｍ／ｓｅｅの溶射条件で、減圧プ
ラズマ溶射により、溶射皮膜を作製した。(Example 3) 80% pure Ti, 18% pure A, 1.2% Mn by weight
As a thermal spray material, a mixed powder consisting of P: 6.7 K
A thermal sprayed coating was produced by low pressure plasma spraying under thermal spraying conditions of Pa, vs=5 sm/see.
この皮膜をＸ線回折にて同定したところ、Ｔｉ３Ａｌ、
ＴｉＡｌ、Ｔ ｉ Ａ Ｉ ３、Ｔｉにより構成されて
いることが判明した。この結果より、本発明法では、Ｔ
ｉＡｌの靭性や耐酸化性向上に効果のあることの知られ
ているＭｎやＳ；等の第３元素を合金化することも容易
であることが確認された。When this film was identified by X-ray diffraction, it was found that Ti3Al,
It was found that it was composed of TiAl, T i A I 3, and Ti. From this result, in the method of the present invention, T
It was confirmed that it is also easy to alloy a third element such as Mn or S, which is known to be effective in improving the toughness and oxidation resistance of iAl.
［発明の効果］
本発明のＴｉＡｌ系化合物層の形成方法は以上詳述した
ように、重量比で７〜４３％のＡＩ粉末を含有するＴｉ
粉末を溶射材料として、減圧プラズマ溶射することを特
徴とするものであって、プラズマ柱の中へＡ１粉末を混
合したＴｉ粉末を供給して溶融することによって、基材
表面に溶融溶着された盛会の組成範囲は、溶射材料であ
るＴｉ粉末中に混合するＡ１粉末の量によって、自由に
調整することができる。また、プラズマ溶射条件あるい
は減圧室の内圧および基材の温度を適宜選択することに
より、Ｔ ｉ Ａ Ｉ系化合物層を盛金することができ
る。さらに、得られた盛金は溶製法によるＴ ｉ Ａ
Ｉ系化合物よりも硬度が高（、ＴｉＡｌの靭性や耐酸化
性向上に効果のあることの知られているＭｎやＳ；等の
第３元素を合金化することも容易である。[Effects of the Invention] As detailed above, the method for forming a TiAl-based compound layer of the present invention uses a TiAl-based compound layer containing 7 to 43% by weight of AI powder.
It is characterized by low-pressure plasma spraying using a powder as a thermal spraying material, and by supplying Ti powder mixed with A1 powder into a plasma column and melting it, the coating is fused and welded to the surface of the base material. The composition range of can be freely adjusted by changing the amount of A1 powder mixed into Ti powder, which is a thermal spray material. Further, by appropriately selecting the plasma spraying conditions, the internal pressure of the decompression chamber, and the temperature of the base material, it is possible to deposit the T i A I-based compound layer. Furthermore, the obtained metal is T i A by melting method.
It is also easy to alloy third elements such as Mn and S, which have higher hardness than I-based compounds (and are known to be effective in improving the toughness and oxidation resistance of TiAl).
第１図はＴ ｉ Ａ Ｉ系化合物層（Ｔｉ＋３６％ＡＩ
）のＸ線回折図形、第２図はＴｉＡｌ系化合物層（Ｔｉ
＋３６％ＡＩ）の金属組織を表す２００倍の顕微鏡写真
、第３図はＴｉ戊膜とＴｉＡｌ系化合物皮膜（Ｔｉ＋３
６％ＡＩ）の温度と硬度の関係を示す線図、第４図はＴ
ｉ Ａ Ｉ系化合物層（Ｔｉ＋１０％ＡＩ）のＸ線回
折図形である。
第１図
第２図
００
硬３００
ご ２
（ＨＶ）１００
第３図
第４図Figure 1 shows a Ti A I compound layer (Ti + 36% AI).
), and Figure 2 shows the X-ray diffraction pattern of the TiAl-based compound layer (Ti
Figure 3 is a 200x micrograph showing the metallographic structure of a Ti film and a TiAl-based compound film (Ti+36% AI).
6% AI), a diagram showing the relationship between temperature and hardness, Figure 4 is T
i A This is an X-ray diffraction pattern of an I-based compound layer (Ti+10% AI). Figure 1 Figure 2 00 Hard 300 Go 2 (HV) 100 Figure 3 Figure 4
Claims (1)
末を溶射材料として、減圧プラズマ溶射することを特徴
とするＴｉＡｌ系化合物層の形成方法。(1) A method for forming a TiAl-based compound layer, which comprises performing low-pressure plasma spraying using Ti powder containing 7 to 43% Al powder by weight as a thermal spraying material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29545689A JPH03158453A (en) | 1989-11-14 | 1989-11-14 | Formation of tial compound layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29545689A JPH03158453A (en) | 1989-11-14 | 1989-11-14 | Formation of tial compound layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03158453A true JPH03158453A (en) | 1991-07-08 |
Family
ID=17820824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29545689A Pending JPH03158453A (en) | 1989-11-14 | 1989-11-14 | Formation of tial compound layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03158453A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016160441A (en) * | 2015-02-26 | 2016-09-05 | 学校法人慶應義塾 | Surface treatment method and intermetallic compound coat-attached component made of metal |
-
1989
- 1989-11-14 JP JP29545689A patent/JPH03158453A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016160441A (en) * | 2015-02-26 | 2016-09-05 | 学校法人慶應義塾 | Surface treatment method and intermetallic compound coat-attached component made of metal |
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