JPH03148869A - Photo-detector - Google Patents
Photo-detectorInfo
- Publication number
- JPH03148869A JPH03148869A JP1288191A JP28819189A JPH03148869A JP H03148869 A JPH03148869 A JP H03148869A JP 1288191 A JP1288191 A JP 1288191A JP 28819189 A JP28819189 A JP 28819189A JP H03148869 A JPH03148869 A JP H03148869A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor substrate
- junction
- signal charges
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 86
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 230000006798 recombination Effects 0.000 claims abstract description 16
- 238000005215 recombination Methods 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 239000000969 carrier Substances 0.000 claims abstract description 4
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 20
- 238000009792 diffusion process Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- -1 Boron ions Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（概！）
赤外線検知器のｐｎ接合による光電変換部の構造に関し
、
化合物半導体上のｐｎ接合アレイよりなる光検知器にお
いて少なくとも各ｐｎ接合間での信号電荷のクロストー
クを減少させる光電変換部造をもつことを目的とし、
半導体基板の表面に該半導体基板とは逆の導電型層を所
定間隔で複数形成し、該半導体基板と該逆導電型層とに
よりｐｎ接合による光電変換部を形成する構造とした光
検知器において、前記半導体基板の深さ方向に連続的に
エネルギーギャップを大とし、該半導体基板の過剰な少
数キャリアが該半導体基板の表面方向に向かう電位勾配
を有するようにし、かつ、前記複数の道ｌ電８：Ｊ、層
の各々を取り巻くように光信号電荷の再結合領域をｍＧ
するよう構成する。Detailed Description of the Invention (Overview!) Regarding the structure of a photoelectric conversion section using a pn junction in an infrared detector, crosstalk of signal charges at least between each pn junction in a photodetector consisting of a pn junction array on a compound semiconductor In order to have a photoelectric conversion structure that reduces the In a photodetector having a structure in which a photoelectric conversion part is formed by a method, an energy gap is continuously increased in the depth direction of the semiconductor substrate, and an electric potential at which excessive minority carriers of the semiconductor substrate are directed toward the surface of the semiconductor substrate is provided. The recombination region of optical signal charges is made to have a gradient and surround each of the plurality of layers.
Configure it to do so.
（産業上の利用分野）
本発明は光検知器に係り、特に赤外線検知器のｐｎ接合
による充電変換部の構造に関する。(Industrial Field of Application) The present invention relates to a photodetector, and more particularly to the structure of a charge conversion section using a pn junction in an infrared detector.
近年の赤外線検知器の高性能化の要求に伴い、赤外線検
知器には小型、多画素化、分解能の向上が要求されてい
る。分解能の向上のためには、基板上のｐｎ接合による
光電変換部の構成を、画素間（各ｐｎ接合間）のピッチ
を綱かくし、しかも各画Ｘ間での光信号電荷のりＯスト
ークを減少させる必要がある。With the recent demand for higher performance of infrared detectors, infrared detectors are required to be smaller, have more pixels, and have improved resolution. In order to improve the resolution, the structure of the photoelectric conversion section using pn junctions on the substrate is made to have a tight pitch between pixels (between each pn junction), and to reduce the optical signal charge density O stalk between each pixel. It is necessary to do so.
従来のｐｎ接合による光検知器においては、基板上に形
成された複数個のｐｎ接合よりなる光電変換部を有し、
裏面から赤外光が入射される裏面入射型と、表面から赤
外光が入射される表面人射−型とがある。裏面入射型の
光検知器ではｐｎ接合から離れた基板の奥で赤外光が充
電変換され、光による信号電荷は基板内を拡散し、信号
読み出し部になるｐｎ接合に達する。このため、分解能
向上のため画素ピッチを細かくした光検知器では隣接画
素間での信号電荷のクロストークは避けられない。A conventional photodetector using a pn junction has a photoelectric conversion section made up of a plurality of pn junctions formed on a substrate,
There is a back-illuminated type in which infrared light is incident from the back surface, and a front-illuminated type in which infrared light is incident from the front surface. In a back-illuminated photodetector, infrared light is charged and converted deep inside the substrate away from the pn junction, and the signal charge caused by the light is diffused within the substrate and reaches the pn junction, which becomes the signal readout section. For this reason, in a photodetector in which the pixel pitch is reduced to improve resolution, crosstalk of signal charges between adjacent pixels is unavoidable.
そこで、従来は第８図（ａ）に示す如く例えばｐ型の半
導体基板１の表面にｎ＋領域２を形成してｐｎ接合の光
電変換部を形成すると共に、その先電変換部のまわりに
半導体基板１と同一導電型（ここではｐ型）の高濃度Ｈ
３を設け、半導体基板１に電位障壁を彫琢している。Therefore, conventionally, as shown in FIG. 8(a), for example, an n+ region 2 is formed on the surface of a p-type semiconductor substrate 1 to form a pn junction photoelectric conversion section, and a semiconductor High concentration H of the same conductivity type as substrate 1 (p-type here)
3 is provided, and a potential barrier is carved into the semiconductor substrate 1.
これにより、半導体基板１の裏面から入射される赤外光
が充電変換されて得られた信号電荷は同図（ａ）に４で
示すように隣接画素（ｐｎ接合）へ拡散することが、高
濃度層３により阻止される。As a result, the signal charge obtained by charging and converting the infrared light incident from the back surface of the semiconductor substrate 1 can be diffused to the adjacent pixel (p-n junction) as shown by 4 in FIG. This is blocked by the concentration layer 3.
他方、表面入射型の光検知器ではカットオフ波長近傍の
信号光が基板の１１１深くで吸収され充電変換されるの
で、長い波長でのりＯストーク（スミア）が発生し、ま
た同様な理由でブルーミングも発生している。On the other hand, in front-illuminated photodetectors, signal light near the cutoff wavelength is absorbed deep into the substrate and converted into charge, which causes smearing at long wavelengths, and also causes blooming for the same reason. is also occurring.
そこで、従来の表面入射型の光検知器では第８図（ａ）
と同様の高濃度層を設けたり、またｐｎ接合光電変換部
分を除いた表面に、例えばアルミニウム（ＡＩｌ）から
なるシールドを形成している。Therefore, in the conventional front-illuminated photodetector, as shown in Fig. 8(a).
A high concentration layer similar to the above is provided, and a shield made of aluminum (AIl), for example, is formed on the surface excluding the pn junction photoelectric conversion portion.
（発明が解決しようとする課題）
しかるに、化合物半導体を基板として用い、その表面に
光電変換部を一次元、又は二次元配列してなる光検知器
においては、高濃度層を基板深く形成することが困難で
あるため、第８図（ａ）に示したＩｓ造をとることが難
しく、よって同図（ｂ）に示すように、例えばｐ型の半
導体基板５の表面にｎ＋領域６を形成してｐｎ接合の光
電変換部を構成すると共に、その光電変換部のまわりに
物理的な分離１７を設けるか、各ｐｎ接合（画素）のピ
ッチを広くしたり、半導体基板のキャリア濃度を上げて
信号電荷の拡散長を小さくしている。(Problem to be Solved by the Invention) However, in a photodetector in which a compound semiconductor is used as a substrate and photoelectric conversion parts are arranged one-dimensionally or two-dimensionally on the surface thereof, a high concentration layer must be formed deep in the substrate. Therefore, it is difficult to obtain the Is structure shown in FIG. 8(a). Therefore, as shown in FIG. 8(b), for example, an n+ region 6 is formed on the surface of a p-type semiconductor substrate 5. In addition to constructing a pn junction photoelectric conversion section, a physical separation 17 may be provided around the photoelectric conversion section, or the pitch of each pn junction (pixel) may be widened, or the carrier concentration of the semiconductor substrate may be increased to increase the signal strength. The charge diffusion length is reduced.
このため、化合物半導体を用いた光検知器では、画素数
を増やす場合、画素ピッチ（ｐｎ接合ピッチ）を所定値
以下に狭められず光検知器の形状が大きくなってしまう
。また、上記の分離溝７を形成する方法では形成プロセ
スが難しく、歩留りの低下が著しい。更に、半導体基板
のキャリア濃度を上げた場合は、ｐｎ接合特性が悪くな
るという問題がある。また更に、表面入射型ではシール
ド形成工程が必要で工程数が多い。For this reason, in a photodetector using a compound semiconductor, when increasing the number of pixels, the pixel pitch (pn junction pitch) cannot be narrowed to a predetermined value or less, resulting in an increase in the size of the photodetector. Furthermore, the above-described method of forming the separation grooves 7 requires a difficult formation process, resulting in a significant drop in yield. Furthermore, when the carrier concentration of the semiconductor substrate is increased, there is a problem that the pn junction characteristics deteriorate. Furthermore, the front-illuminated type requires a shield forming step, which requires a large number of steps.
本発明は以上の点に鑑みてなされたもので、化合一半導
体上のｐｎ接合アレイよりなる光検知器において少なく
とも各ｐｎ接合間での信号電荷のクロストークを減少さ
せる光電変換構造をもつ光検知器を提供することを目的
とする。The present invention has been made in view of the above points, and is a photodetector having a photoelectric conversion structure that reduces crosstalk of signal charges at least between each pn junction in a photodetector consisting of a pn junction array on a compound semiconductor. The purpose is to provide equipment.
（課題を解決するための手段）
第１図は請求項１記載の発明（以下、第１発明という）
の原理説明図を示す。同図（Ａ）は第１発明の要部概略
断面図を示し、１０は半導体基板、１１は逆導電型層、
１２は再結合領域を示す。半導体基板１０の表面には逆
導電型病１１が所定間隔で複数形成されており、半導体
基板１０と透導電ヤ層１１とによりｐｎ接合による充電
変換部が形成されている。(Means for solving the problem) Figure 1 shows the invention as claimed in claim 1 (hereinafter referred to as the first invention).
A diagram explaining the principle is shown. The same figure (A) shows a schematic cross-sectional view of the main part of the first invention, 10 is a semiconductor substrate, 11 is a reverse conductivity type layer,
12 indicates a recombination region. A plurality of opposite conductivity types 11 are formed on the surface of the semiconductor substrate 10 at predetermined intervals, and the semiconductor substrate 10 and the transparent conductive layer 11 form a charge conversion section by a pn junction.
このような構造の光検すすｒｉにおいて、第１発明では
第１図（Ｂ）に示すように半導体基板１０の深さ方向に
連続的にエネルギーギャップを大とし、半導体基板１０
の過剰な小数キャリアが半導体基板１０の表面方向に向
かう電位勾配を有するようにし、かつ、複数の逆３！Ｊ
ａｉす：！層１１の各々を取り巻くように光信号電荷の
再結合領域１２を設けたものである。In the optical detection sensor having such a structure, in the first invention, as shown in FIG. 1(B), the energy gap is continuously increased in the depth direction of the semiconductor substrate 10.
The excess minority carriers of have a potential gradient toward the surface of the semiconductor substrate 10, and a plurality of reverse 3! J
AI:! A recombination region 12 for optical signal charges is provided so as to surround each layer 11.
また、第２図は品求項２記載の発明（以下、第２発明と
いう）の原理設明図を示す。同図中、第１図と同−Ｉ成
部分には同一符号を付し、その説明を省略する。第２図
（Ａ＞に示す第２発明の要部概略断面図において、半導
体基板１０上には逆導電型［１１１の他に拡散層１３が
形成され、拡散１１１３と半導体基板１０とによるｐｎ
接合により電荷排出領域が形成されている。すなわら、
この第２発明は前記第１図（Ａ）の再結合領域１２に代
えて電荷排出領域を設けたものである。Further, FIG. 2 shows a diagram illustrating the principle of the invention described in item 2 (hereinafter referred to as the second invention). In the figure, the same reference numerals are given to the -I parts as in FIG. 1, and the explanation thereof will be omitted. In the schematic cross-sectional view of the main part of the second invention shown in FIG.
A charge discharge region is formed by the junction. In other words,
In this second invention, a charge discharge region is provided in place of the recombination region 12 of FIG. 1(A).
また、第２図（Ａ）には逆導電型層１１の一部を除いた
半導体基板１０の表面上に絶縁１１１４が形成され、更
にその上に拡散Ｊ１１３に対応した位置に電極１５が設
けられている。Further, in FIG. 2(A), an insulator 1114 is formed on the surface of the semiconductor substrate 10 excluding a part of the opposite conductivity type layer 11, and an electrode 15 is further provided on the insulator 1114 at a position corresponding to the diffusion J113. ing.
第１図に示す第１発明においては、半導体基板１０のキ
ャリア濃度を一定にすると、半導体基板１０がｐ型のと
きは第１図（Ｂ）に示すように伝導帯の電位Ｅｃが半導
体基板１０の裏面から逆導電型層１１の方向へ伝導帯上
の過剰な電子を加速するような方向へ傾く。一方、価電
子帯の電位Ｅｖは逆導電型１１１１の近傍の空乏層かう
半導体基板１０の裏面まで一定である。In the first invention shown in FIG. 1, when the carrier concentration of the semiconductor substrate 10 is kept constant, when the semiconductor substrate 10 is p-type, the potential Ec of the conduction band of the semiconductor substrate 10 changes as shown in FIG. is tilted in a direction that accelerates excess electrons on the conduction band from the back surface toward the opposite conductivity type layer 11. On the other hand, the potential Ev of the valence band is constant up to the back surface of the semiconductor substrate 10, which is the depletion layer near the opposite conductivity type 1111.
上記の伝導帯の電位勾配による電界を電子の速度が熱速
度に近くなるようにする。こうすると、半導体基板１０
に入射された光（ｈν）により発生した信号電荷（電子
）は第１図（Ａ）、（Ｂ）に示すように伝導帯の電位勾
配によって加速され、横方向に殆ど拡散することなくｐ
ｎ−接合を有する半導体基板１０の表面に達し、第１図
（Ａ＞に■で示す如く表面で横方向に拡散する。The electric field due to the potential gradient in the conduction band is set so that the velocity of electrons approaches the thermal velocity. In this way, the semiconductor substrate 10
The signal charges (electrons) generated by the incident light (hν) are accelerated by the potential gradient of the conduction band as shown in Figure 1 (A) and (B), and the signal charges (electrons) are accelerated by the potential gradient of the conduction band, and the p
It reaches the surface of the semiconductor substrate 10 having an n-junction, and diffuses laterally at the surface as shown by ▪ in FIG. 1 (A>).
しかも、第１発明ではｐｎ接合間に再結合領域１２が設
けられているため、上記の基板表面で横方向に拡散した
信号電荷は、表面再結合速度ＳＯが無限大の再結合領域
１２に吸い取られる。Moreover, in the first invention, since the recombination region 12 is provided between the p-n junctions, the signal charges diffused laterally on the substrate surface are absorbed by the recombination region 12 where the surface recombination speed SO is infinite. It will be done.
また、第２図に示す第２発明では第２図（Ａ）。Moreover, in the second invention shown in FIG. 2, FIG. 2(A).
（８）に示すように信号電荷（電子）が伝導帯の電位勾
配によつｔ加速され、横方向に殆ど拡散することなく基
板表面に達し、その後横方向に拡散する点は第１発明と
同様であるが、本発明では拡１！Ｊ１１３と半導体基板
１０とによるｐｎ接合の排出領域により横方向に拡散し
た信号電荷が吸い取られる。As shown in (8), the signal charges (electrons) are accelerated by the potential gradient of the conduction band, reach the substrate surface with almost no lateral diffusion, and then diffuse laterally, which is the first invention. Similarly, in the present invention, the expansion is 1! The signal charges diffused in the lateral direction are absorbed by the discharge region of the pn junction between J113 and the semiconductor substrate 10.
また、本発明では第２図（Ａ）、（Ｃ）に示すように、
電荷排出領域の周囲に電極１５．絶縁膜１４及び半導体
からなるＭＩＳ電極により、電極１５の直下の半Ｗ（４
基板１０に第２図（Ｃ）に示すように表面反転領域１６
を形成することにより、電圧ｊｌ１７から電極１５への
印加電圧によって電荷排出領域の面積を調整することが
できる。従って、本発明では入射光の強度に応じて電極
１５への印加電圧をＩＩＩＩｌｌすることにより、入射
光の強度に応じて電荷の排出量を調整することができる
。In addition, in the present invention, as shown in FIGS. 2(A) and (C),
Electrodes 15. around the charge discharge area. The MIS electrode made of the insulating film 14 and the semiconductor provides a half W (4
A surface inversion region 16 is formed on the substrate 10 as shown in FIG. 2(C).
By forming this, the area of the charge discharge region can be adjusted by applying the voltage from the voltage jl17 to the electrode 15. Therefore, in the present invention, by adjusting the voltage applied to the electrode 15 according to the intensity of the incident light, it is possible to adjust the amount of charge discharged according to the intensity of the incident light.
なお、半導体基板１０はｐ型でなくｎ型でもよく、その
場合はｐｎ接合を形成する基板表面から深さ方向にエネ
ルギーギャップを連続的に大とし、かつ、基板のキャリ
ア濃度を基板内で一定にすると、第３図に示す如く価電
子帯の電位Ｅｖが基板の裏面から表面方向へ価電子帯の
過剰な正孔を加速するように傾く勾配を有する。なお、
第３図中、ＥＦはフェルミレベルを示す。Note that the semiconductor substrate 10 may be an n-type instead of a p-type; in that case, the energy gap is continuously increased in the depth direction from the substrate surface forming a p-n junction, and the carrier concentration of the substrate is constant within the substrate. Then, as shown in FIG. 3, the potential Ev of the valence band has a gradient such that it accelerates excess holes in the valence band from the back surface of the substrate toward the front surface. In addition,
In FIG. 3, EF indicates the Fermi level.
次に本発明の各実施例について説明する。第４図は本発
明のＩＩＩ実施例の構成図及びエネルギーバンド図で、
同図（Ａ）は上面図、同図（Ｂ）は同図（Ａ）のｘ−ｘ
線に沿う縦断面図、同図（Ｃ）は同図（Ｂ）のＹ−Ｙ線
に沿う断面でのエネルギーバンド図を示す、本実施例は
第１発明の実施例で、半導体基板１０としてＩ−ＩＶ族
半導体の混晶であるｌ） Ｈ０１−ｘ Ｃｄ ｘＴ
ｅ Ｗ板２０を用いるものである。この基板２０の表面
には所定砺隔でｎ＋拡＃２Ｉ！層２１（第１図の１１に
相当）が形成され、このｎ９拡散１１１２１と基板２０
とのｐｎ接合により充電変換部が形成されている。Next, each embodiment of the present invention will be described. FIG. 4 is a configuration diagram and an energy band diagram of the third embodiment of the present invention,
The same figure (A) is a top view, the same figure (B) is xx of the same figure (A)
This embodiment is an embodiment of the first invention, and FIG. I-IV group semiconductor mixed crystal l) H01-x Cd xT
e W board 20 is used. On the surface of this substrate 20, there are n+ expanded #2I! A layer 21 (corresponding to 11 in FIG. 1) is formed, and this n9 diffusion 11121 and the substrate 20
A charge conversion section is formed by a pn junction with the .
また、基板２０の表面には第４図（Ａ）、（Ｂ）に示す
ように、複数のｎ″拡散層２１の各々の一部と所定部分
が夫々露出するように保護用絶ＲＩＭとして硫化亜ｔｌ
ａ （Ｚｎ Ｓ）１１１１２２が形成されている。Ｚｎ
Ｓ膜２２の開口部のうちｎ＋拡散層２仕の間口部には例
えばインジウム（Ｉｎ）からなる信号取出し電極２３が
形成され、それ以外の間口部には例えば金（ＡＵ ）か
らなるオーミックコンタクト用金属電極２４が形成され
ている。オーミックコンタクト用金属電４４ｉ２４は第
４図（Ａ）。Further, as shown in FIGS. 4A and 4B, on the surface of the substrate 20, a sulfide layer is formed as a protective RIM so that a part of each of the plurality of n'' diffusion layers 21 and a predetermined part are exposed respectively. sub-tl
a (Zn S) 111122 is formed. Zn
A signal extraction electrode 23 made of, for example, indium (In) is formed in the opening of the S film 22 between the n+ diffusion layers 2, and an ohmic contact electrode made of, for example, gold (AU) is formed in the other opening. A metal electrode 24 is formed. The metal electrode 44i24 for ohmic contact is shown in FIG. 4(A).
（８）かられかるように、相隣るｐｎ接合による光電変
換部の間に形成されており、前記した再結合領域１２を
構成する。As can be seen from (8), it is formed between the photoelectric conversion portions formed by adjacent pn junctions, and constitutes the above-mentioned recombination region 12.
また、本実施例では、ＨＱ １−ｘ Ｃｄ ｘＴｅ基板
２０の組成比Ｘが拡散１１２１とのｐｎ接合部で０．２
１０（ＸネＡｐキーハントＥＱ１＝ ０．１００１ｅＶ
）とし、ｐｎ接合部から基板深さ方向に組成比Ｘを線形
に太き（し、基板２００Ｉ！厚１０μｍの所で０．２４
０ （Ｅ Ｏ２＝ ０．１４８３ｔ！Ｖ ）になるよう
にしている。更にｐ型のＨａ 、−ｘ Ｃｄ ｘＴ ｅ
基板２０のキャリア濃度をＩＸ１０１Ｇαうに一定にす
ると、そのエネルギーバンド図は第４１１１ （Ｃ）に
示す如くになり、価電子帯の電位Ｅｖの勾配はわずかと
なり、エネルギーギャップの差は殆ど伝導帯側にくるた
め、伝導帯の電位Ｅｃの勾配が大きくなり、この場合の
伝導帯の電位勾配による電界は約５０Ｖ／ａＩ（ｖ （
Ｅ（２２−ＥＱ＋ ）／１０８ｍ ）となる。Further, in this example, the composition ratio X of the HQ 1-x Cd xTe substrate 20 is 0.2 at the pn junction with the diffusion 1121.
10 (Xne Ap Key Hunt EQ1 = 0.1001eV
), and the composition ratio
0 (E O2 = 0.1483t!V). Furthermore, p-type Ha, -x Cd xT e
When the carrier concentration of the substrate 20 is kept constant as IX101Gα, its energy band diagram becomes as shown in 4111 (C), the gradient of the potential Ev in the valence band is slight, and the difference in energy gap is almost on the conduction band side. Therefore, the gradient of the conduction band potential Ec increases, and the electric field due to the conduction band potential gradient in this case is approximately 50 V/aI (v (
E(22-EQ+)/108m).
伝導帯の電子の移動度は７７にで２Ｘ１０５ｏｒ２／Ｖ
／ｓであるから、電子の移動度と電界との積で表わされ
る電子の速度はＩＸ１０α／Ｓとなり、はぼ熱速度に近
くなる。The mobility of electrons in the conduction band is 77, which is 2X105or2/V.
/s, the electron velocity expressed as the product of the electron mobility and the electric field is IX10α/S, which is close to the thermal velocity.
これにより、ｐ型の”１−ｘ ＣｄｘＴｅ基板２０の裏
面に入射した赤外光により裏面で発生した信号電荷は第
４図（Ｂ）に２５で示すように横方向に拡散することな
くｐｎ接合部を有する基板表面に到達した慢、基板表面
を横方向に拡散し、その後オーミックコンタクト用金属
電極２４による再結合領域で消滅する。As a result, signal charges generated on the back surface of the p-type "1-x CdxTe substrate 20 due to infrared light incident on the back surface are not diffused in the lateral direction and are transferred to the p-n junction, as shown at 25 in FIG. 4(B). Once it reaches the surface of the substrate having a portion, it diffuses laterally across the surface of the substrate, and then disappears in the recombination region formed by the metal electrode 24 for ohmic contact.
従って、一つのｐｎＪｌ合に流入する信号電荷はオーミ
ックコンタクト用金ｍａ１極２４で囲まれた領域からの
みとなり、隣接するｐｎ接合（画素）間での信号電荷の
混合がなくなる。従って、入射赤外光をｐｎ接合で光電
変換して得られた信号にはクロストークがなく、鮮明な
赤外画像が得られる。Therefore, the signal charges flowing into one pnJl junction only come from the region surrounded by the gold ma1 electrode 24 for ohmic contact, and there is no mixing of signal charges between adjacent pn junctions (pixels). Therefore, the signal obtained by photoelectrically converting the incident infrared light at the pn junction has no crosstalk, and a clear infrared image can be obtained.
次に本実施例の製造方法について第５図と共に説明する
。同図中、第４図と同一構成部分には同一符号を付しで
ある。Next, the manufacturing method of this example will be explained with reference to FIG. In the figure, the same components as in FIG. 4 are given the same reference numerals.
まず、ｐ型のＣｄＴｅ基板に水１１（Ｈｇ）、カドミウ
ム（Ｃｄ）及びテルル（Ｔｅ）を有機金属気相１ピタキ
シャル成長法（ＭＯＣＶＤ法）により１ビタキシャル成
長させると共に、その際にＨｇに対するＣｄの組成比Ｘ
を時間の経過と共に変え、前記したように基板表面のｐ
ｎ接合部から基板深さ方向に進むにつれてＨＯに対する
Ｃｄの−組成比を大とする。これにより、厚さ１０μ糟
のｐ型のＨａ、、ＣｄｘＴｅ基板２０を形成する。First, water 11 (Hg), cadmium (Cd), and tellurium (Te) are grown bitaxially on a p-type CdTe substrate by metal organic vapor phase one-pitaxial growth method (MOCVD method). Composition ratio
is changed over time, and the p of the substrate surface changes as described above.
The -composition ratio of Cd to HO increases as it goes from the n-junction in the depth direction of the substrate. As a result, a p-type Ha, CdxTe substrate 20 having a thickness of 10 μm is formed.
次に、上記基板２０の表面を１１５図＜Ａ）に示すよう
に所定のバターニングをしたレジスト２７で冒りた後、
レジスト２７の上方からボロンイオン（Ｂ９）を高濃度
イオン注入してレジスト２７で覆われていない基板２０
の表面部分に所定深さのｎ９拡散層２１を形成する。こ
のｎ９拡散層２１と基板２０とのｐｎ接合により光電変
換部（フォトダイオード）が形成される。Next, as shown in FIG. 115A, the surface of the substrate 20 is etched with a resist 27 that has been patterned in a predetermined manner.
Boron ions (B9) are implanted at a high concentration from above the resist 27 to form a substrate 20 that is not covered with the resist 27.
An N9 diffusion layer 21 of a predetermined depth is formed on the surface of the substrate. A photoelectric conversion section (photodiode) is formed by the pn junction between the n9 diffusion layer 21 and the substrate 20.
次に、レジスト２７を除去した後第５図（Ｂ）に示す如
く、スパッタ若しくは蒸着により基板２０の表面全面に
、保護用絶縁膜としてＺｎＳ膜２２を膜厚１μ園で形成
する。続いて第５図（Ｃ）に示す如く、フォトリソグラ
フィ：［程によってＺｎＳ１１２２をエッチングし、ｎ
９拡散１１１２１を一部露出させる開口部（コンタクト
穴）２２ａと、各ｐｎ接合部間の基板表面を露出させる
間口部（コンタクト穴）２２ｂとを開孔する。Next, after removing the resist 27, as shown in FIG. 5B, a ZnS film 22 is formed as a protective insulating film over the entire surface of the substrate 20 by sputtering or vapor deposition to a thickness of about 1 μm. Subsequently, as shown in FIG. 5(C), the ZnS1122 was etched by photolithography:
An opening (contact hole) 22a that partially exposes the 9 diffusion 11121 and a frontage (contact hole) 22b that exposes the substrate surface between each pn junction are formed.
次に第５図（Ｄ）に示す如く、ｉｎを開口部２２ａのみ
に蒸着して信号電荷取出し電ｌｆＩ２３として形成した
後、同図（Ｅ）に示す如く、Ａｕを開口部２２ｂ＆：、
１着してオーミックコンタクト用金属電極２４を形成す
る。Next, as shown in FIG. 5(D), in is deposited only on the opening 22a to form a signal charge extraction voltage IfI23, and then, as shown in FIG. 5(E), Au is deposited on the opening 22b &:
A metal electrode 24 for ohmic contact is formed by attaching one layer.
次に本発明の第２実施例について説明するに、第６図は
本発明の第２実施例の構成図及びエネルギーバンド図を
示し、同図＜Ａ）は上面図、同図（Ｂ）ｕ同図（Ａ）
１７）Ｘ−Ｘ ［ｌｋ−沿つｌＩ断面図、同図（Ｃ）は
同図（Ｂ）のＹ−Ｙ翰に沿う断面でのエネルギーバンド
図を示す。第６図は第２発明の実施例を示し、第４図と
同一構成部分には同一符号を付し、その説明を省略する
。Next, to explain the second embodiment of the present invention, FIG. 6 shows a configuration diagram and an energy band diagram of the second embodiment of the present invention. Same figure (A)
17) X-X[1I cross-sectional view along lk-, the same figure (C) shows an energy band diagram in the cross-section along the Y-Y plane of the same figure (B). FIG. 6 shows an embodiment of the second invention, and the same components as those in FIG. 4 are given the same reference numerals, and the explanation thereof will be omitted.
第６図（Ａ＞、（Ｂ）において、３１はｎ＋拡散層で、
各ｐｎ接合部間に形成されており、前記第２図の拡散１
１１３に相当する。また、３２は保護用絶縁膜で、前記
保護用絶１１ｇ！１４に相当し、ｎ′″拡＠ｌｌｉ２１
の一部だけを露出させる開口部を有する。３３はアルミ
ニウム（ＡＩｌ）からなる電極で、前記電極１５に相当
し、ｎ＋拡散１！２ｉ上に形成される。In FIG. 6 (A>, (B)), 31 is an n+ diffusion layer,
The diffusion 1 shown in FIG. 2 is formed between each pn junction.
It corresponds to 113. Further, 32 is a protective insulating film, and the protective insulating film 11g! Corresponds to 14, n′″ expansion @lli21
has an opening that exposes only a portion of the Reference numeral 33 denotes an electrode made of aluminum (AIl), which corresponds to the electrode 15 and is formed on the n+ diffusion 1!2i.
本実施例も第１実施例と同一の基板２ｏを有するから
、基板２０のエネルギーバンド図は第６図に示す如く、
前記第４図（Ｃ）に示したエネルギーバンド図と同一で
ある。これにより、ｐ型のＨＯ，−ｘ Ｃｄ ｘ Ｔ
ｅ基板２ｏの裏面に入射した赤外光により発生した信号
電荷は第６図（Ｂ）に３４で示す如く基板裏面から表面
へ直道し、基板表面で拡散されるも、ｎ９拡散１３１と
基板２゜とによるＤｎ接合で排出される。Since this embodiment also has the same substrate 2o as the first embodiment, the energy band diagram of the substrate 20 is as shown in FIG.
This is the same energy band diagram as shown in FIG. 4(C) above. As a result, p-type HO, −x Cd x T
The signal charge generated by the infrared light incident on the back surface of the e-substrate 2o travels straight from the back surface to the front surface as shown at 34 in FIG. 6(B), and is diffused on the surface of the substrate. It is discharged at the Dn junction due to ゜.
これにより、本実施例も第１実施例と同様の特長を有す
る。更に本実施例では、Ｍ１．ＳＩ極構造の電１ｉ３３
に電圧１１３５からの電圧を印加して電極３３の直下の
半導体基板２０の表面を反転状態にすると、反転状態の
領域も電荷排出Ｉ能を有するから実効的に電荷排出用の
ｐｎ接合面積を増加させることができる。As a result, this embodiment also has the same features as the first embodiment. Furthermore, in this embodiment, M1. SI pole structure electric 1i33
When the surface of the semiconductor substrate 20 directly under the electrode 33 is turned into an inverted state by applying a voltage from voltage 1135 to can be done.
しかも、この基板表面の反転領域の面積は電極３３への
印加電圧に応じて変化する。そこで、入射赤外光の強度
に応じて電圧源３５の電圧を可変し、入射赤外光の強疫
が強いときは電極３３への印加電圧を大に調整すること
により、表面反転領域が拡大し、より過剰となっている
（ｔ＠電荷を略吸収することができる。従って、本実施
例によれば、プルーミングも防止することができる。Moreover, the area of the inverted region on the substrate surface changes depending on the voltage applied to the electrode 33. Therefore, by varying the voltage of the voltage source 35 according to the intensity of the incident infrared light and increasing the voltage applied to the electrode 33 when the intensity of the incident infrared light is strong, the surface inversion area can be expanded. However, it is possible to substantially absorb the excess charge (t@). Therefore, according to this embodiment, pluming can also be prevented.
次に第２実施例の製造方法について第７図と共に説明す
る。同図中、第６図と同一構成部分には同一符号を付し
である。第７図（Ａ）は第５図（Ａ）に示した製造工程
と同一であり、基板２０上にｎ拡散ｌ！２１を形成する
。次に第７図（Ｂ）に示す如く、前記レジスト２７を除
去した後、隣接するｎ＋拡散層２１の間の基板２０の表
面を露出させるようにバターニングされたレジスト３８
、 を新たに基板２０上に設け、このレジスト３８をマ
スクとしてＢ＋イオンを高濃度イオン注入してｎ′″拡
散Ｉ！ｉ３１を形成する。Next, the manufacturing method of the second embodiment will be explained with reference to FIG. In the figure, the same components as in FIG. 6 are designated by the same reference numerals. FIG. 7(A) is the same as the manufacturing process shown in FIG. 5(A), and n-diffused l! on the substrate 20. 21 is formed. Next, as shown in FIG. 7(B), after removing the resist 27, a resist 38 is patterned to expose the surface of the substrate 20 between adjacent n+ diffusion layers 21.
, are newly provided on the substrate 20, and using this resist 38 as a mask, B+ ions are implanted at a high concentration to form an n'' diffusion I!i31.
次にレジスト３８を除去した後、第５図（８）に示した
製造工程と同一方法により第７図（Ｃ）に示す如＜Ｚｎ
Ｓ膜３２を形成した後、第５図（Ｃ）に示した製造工程
と同一方法により第７図（Ｄ）に示す如く開口部３２ａ
を開孔する。ただし、開口部３２ａＬｔｎ＋ｆｆ、敗層
２１及び３１のうち、光電変換部を形成する方のｎ＋拡
散ＷＪ２１の一部分のみを露出させる。Next, after removing the resist 38, the manufacturing process shown in FIG. 7(C) is performed using the same manufacturing process as shown in FIG.
After forming the S film 32, an opening 32a is formed as shown in FIG. 7(D) using the same manufacturing process as shown in FIG. 5(C).
Drill a hole. However, among the opening 32aLtn+ff and the failed layers 21 and 31, only a portion of the n+ diffusion WJ21 forming the photoelectric conversion section is exposed.
次に第７図（Ｅ）に示す如く、ＺｎＳｌ１３２のうちｎ
９拡散層３１の上方の位置にＡｌｌからなる金属電極３
３を例えば膜厚０．５ミーで形成する。Next, as shown in FIG. 7(E), n of ZnSl132
9 A metal electrode 3 made of All at a position above the diffusion layer 31
3 is formed with a film thickness of 0.5 mm, for example.
続いて、同図（Ｆ）に示す如くフォトリソグラフィ工程
によりｉｎによる信号電荷取り出し電極２３をパターニ
ングし、最後に同図（Ｇ）に示す如くＡｕからなる金属
電極３９を蒸着によって最も外側の電極３３の外側に形
成する。この電極３９はｐｎ接合部で光電変換が行なえ
るよう接地される。Subsequently, as shown in the figure (F), the signal charge extraction electrode 23 by in is patterned by a photolithography process, and finally, as shown in the figure (G), a metal electrode 39 made of Au is vapor-deposited to form the outermost electrode 33. Form outside of. This electrode 39 is grounded at the pn junction so that photoelectric conversion can be performed.
なお、第７図（Ｅ）に示す電極３３の工程はなくてもよ
い。この場合はＭＩＳ電極を有さないこととなるが、そ
の場合でも基板表面で拡散された信号電荷はｎ＋虱＠１
ｇ３１と基板２０とのｐｎ接合に流入し排出されるから
、画ｌｉｉ間のクロストークを減少させることができる
。Note that the step of forming the electrode 33 shown in FIG. 7(E) may be omitted. In this case, there is no MIS electrode, but even in that case, the signal charge diffused on the substrate surface is n + lice @1
Since it flows into the pn junction between g31 and the substrate 20 and is discharged, crosstalk between the pixels can be reduced.
また、以上の実施例では基板２０はＨｇ１−ｘＣｄｘＴ
ｅとして説明したが、ＩＩ−ＶＩ、 Ｉ−Ｖ。Further, in the above embodiment, the substrate 20 is Hg1-xCdxT
II-VI, IV.
ＩＶ−Ｖｌ族半導体の三元系で構成してもよい。It may be composed of a ternary system of IV-Vl group semiconductors.
（発明の効果）
上述の如く、本発明によれば、基板表面でのみ信号電荷
が拡散するようにし、かつ、充電変換部の間に設けた再
結合領域又はｐｎ接合の排出領域により基板表面で拡散
した信号電荷を吸収、排出するよ−うにしたので、画素
間でのクロストークを防止することができ、従りて、従
来に比べて画素ピッチを狭くでき、かつ、分離溝も形成
しないから従来に比べてより小型、多画素化が可能であ
る等の特長を有するものである。(Effects of the Invention) As described above, according to the present invention, the signal charges are diffused only on the substrate surface, and the signal charges are diffused on the substrate surface by the recombination region provided between the charge conversion parts or the discharge region of the pn junction. Since the diffused signal charge is absorbed and discharged, crosstalk between pixels can be prevented, and the pixel pitch can be narrower than in the past, and no separation grooves are formed. It has features such as being smaller and capable of increasing the number of pixels compared to conventional devices.
第１図は第１Ｒ明の原］！Ｉ！説明図、第２図は第２発
明の原理説明図、
第３図は半導体基板がｎ型のときの本発明の原理説明図
、
第４図は本発明の第１実施例の構成図及びエネルギーバ
ンド図、
ＩＩＳ図は水元明の第１実施例の各製造工程でのＩＩｉ
ｉｉｉ図、
第６図は本発明の第２実施例の構成図及びエネルギーバ
ンド図、
第７図は本発明の第２実施例の各製造工程での断面図、
第８図は従来の光検知器の各例の要部Ｉｓ造図である。
図において、
１０は半導体基板、
１１は逆導電型層、
１２は再結合領域、
１３は排出領域となる拡散層、
１４はｊ１！！縁膜、
１５は電極、
１６は表面反転領域
を示す。
特許出願人 富 士 通 株式会社
１、″″−。−１
５６＝ａＯ
１ＰＩ
／１１ ｈ。
＄１９Ａ４Ｒ理置刈面
第１図Figure 1 shows the 1R Akinohara]! I! Explanatory drawings, FIG. 2 is a diagram explaining the principle of the second invention, FIG. 3 is a diagram explaining the principle of the present invention when the semiconductor substrate is n-type, and FIG. 4 is a configuration diagram and energy diagram of the first embodiment of the present invention. The band diagram and IIS diagram are IIi at each manufacturing process of Akira Mizumoto's first example.
Figure iii, Figure 6 is a configuration diagram and energy band diagram of the second embodiment of the present invention, Figure 7 is a cross-sectional view at each manufacturing process of the second embodiment of the present invention, and Figure 8 is a conventional photodetector. This is a diagram of the main parts of each example of the vessel. In the figure, 10 is a semiconductor substrate, 11 is a layer of opposite conductivity type, 12 is a recombination region, 13 is a diffusion layer that becomes a discharge region, and 14 is j1! ! 15 is an electrode, and 16 is a surface inversion region. Patent applicant: Fujitsu Ltd. 1, ″″−. −1 56=aO 1PI /11 h. $19A4R cutting surface diagram 1
Claims (2)
）とは逆の導電型層（１１）を所定間隔で複数形成し、
該半導体基板（１０）と該逆導電型層（１１）とにより
ｐｎ接合による光電変換部を形成する構造とした光検知
器において、 前記半導体基板（１０）の深さ方向に連続的にエネルギ
ーギャップを大とし、該半導体基板（１０）の過剰な少
数キャリアが該半導体基板（１０）の表面方向に向かう
電位勾配を有するようにし、かつ、前記複数の逆導電型
層（１１）の各々を取り巻くように光信号電荷の再結合
領域（１２）を設けたことを特徴とする光検知器。(1) The semiconductor substrate (10) is coated on the surface of the semiconductor substrate (10).
) a plurality of conductivity type layers (11) are formed at predetermined intervals,
In a photodetector having a structure in which the semiconductor substrate (10) and the opposite conductivity type layer (11) form a photoelectric conversion section by a pn junction, an energy gap is formed continuously in the depth direction of the semiconductor substrate (10). is made large so that excess minority carriers of the semiconductor substrate (10) have a potential gradient toward the surface of the semiconductor substrate (10), and surround each of the plurality of opposite conductivity type layers (11). A photodetector characterized in that a recombination region (12) for optical signal charges is provided.
導電型層（１１）の各々を取り巻くように過剰な光信号
電荷の排出領域（１３）を設けたことを特徴とする請求
項１記載の光検知器。(2) In place of the recombination region (12), an excess optical signal charge discharge region (13) is provided so as to surround each of the plurality of opposite conductivity type layers (11). The photodetector according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1288191A JPH0828493B2 (en) | 1989-11-06 | 1989-11-06 | Light detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1288191A JPH0828493B2 (en) | 1989-11-06 | 1989-11-06 | Light detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03148869A true JPH03148869A (en) | 1991-06-25 |
| JPH0828493B2 JPH0828493B2 (en) | 1996-03-21 |
Family
ID=17726992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1288191A Expired - Fee Related JPH0828493B2 (en) | 1989-11-06 | 1989-11-06 | Light detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828493B2 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JPH0828493B2 (en) | 1996-03-21 |
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| Date | Code | Title | Description |
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| LAPS | Cancellation because of no payment of annual fees |