JPH03143914A - Epoxy resin composition and sealed semiconductor device - Google Patents
Epoxy resin composition and sealed semiconductor deviceInfo
- Publication number
- JPH03143914A JPH03143914A JP27973189A JP27973189A JPH03143914A JP H03143914 A JPH03143914 A JP H03143914A JP 27973189 A JP27973189 A JP 27973189A JP 27973189 A JP27973189 A JP 27973189A JP H03143914 A JPH03143914 A JP H03143914A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- phenol
- resin
- inorganic filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 45
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 45
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 229920003986 novolac Polymers 0.000 claims abstract description 19
- 239000005011 phenolic resin Substances 0.000 claims abstract description 16
- 238000007789 sealing Methods 0.000 claims abstract description 16
- 239000011256 inorganic filler Substances 0.000 claims abstract description 12
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 12
- 239000011342 resin composition Substances 0.000 claims abstract description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 5
- 238000002156 mixing Methods 0.000 abstract description 5
- 235000010215 titanium dioxide Nutrition 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 abstract description 3
- 229930003836 cresol Natural products 0.000 abstract description 3
- 239000004843 novolac epoxy resin Substances 0.000 abstract description 3
- 230000007717 exclusion Effects 0.000 abstract 1
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 229920001568 phenolic resin Polymers 0.000 description 6
- 239000010680 novolac-type phenolic resin Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- -1 methyl isobutyl Chemical group 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- QSSXJPIWXQTSIX-UHFFFAOYSA-N 1-bromo-2-methylbenzene Chemical compound CC1=CC=CC=C1Br QSSXJPIWXQTSIX-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 125000000113 cyclohexyl group Chemical class [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- CAYGQBVSOZLICD-UHFFFAOYSA-N hexabromobenzene Chemical compound BrC1=C(Br)C(Br)=C(Br)C(Br)=C1Br CAYGQBVSOZLICD-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、明るい明度を有するとともに色ムラのない外
観特性に優れたエポキシ樹脂組成物、及び該樹脂組成物
により封止された半導体封止装置に関する。Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention provides an epoxy resin composition that has bright brightness and excellent appearance characteristics with no uneven color, and an epoxy resin composition that is encapsulated with the resin composition. The present invention relates to a semiconductor encapsulation device.
（従来の技術）
近年、半導体装置の封止方法は、金属もしくはセラミッ
クによるハーメチック方式に代って、エポキシ樹脂組成
物で樹脂封止をする方法が主流となっている。 樹脂封
止の方法が主流となった理由は、エポキシ樹脂組成物が
特性、量産性、信頼性、価格面などで優れているためで
あるが、多くは黒色あるいは明度の比較的暗いものが使
用されていた。 かかる黒色の樹脂封止用エポキシ樹脂
組成物では、エポキシ樹脂、ノボラック型フェノール樹
脂等を主成分とし、それぞれを粉砕して常温で混合し、
さらに９０〜９５℃程度で混練して冷却した後、粉砕し
て得た成形材料が好適である。(Prior Art) In recent years, the mainstream method for sealing semiconductor devices has been to use an epoxy resin composition instead of a hermetic method using metal or ceramic. The reason why resin encapsulation has become mainstream is because epoxy resin compositions have excellent properties, mass production, reliability, and price, but most of them are black or relatively dark in brightness. It had been. Such a black epoxy resin composition for resin sealing has epoxy resin, novolac type phenol resin, etc. as main components, and each is ground and mixed at room temperature.
Furthermore, a molding material obtained by kneading at about 90 to 95°C, cooling, and then pulverizing is suitable.
ところが、光半導体素子では、透明なものや、白色、緑
色等の外観特性のよい黒以外の色相のものが必要である
とともに、最近はハイレベルの特性が要求されている。However, optical semiconductor devices are required to be transparent or have hues other than black, such as white or green, with good appearance characteristics, and recently, high-level characteristics are required.
（発明が解決しようとする課！！り
外股が白色のフォトカプラ等では、エポキシ樹脂とノボ
ラック型フェノール樹脂とを前記常法で混合・混練した
従来の半導体封止用樹脂組成物では、半導体装置表面に
おける色ムラの発生という問題がある。 すなわち、従
来の組成物中には未反応のノボラック型フェノール樹脂
がかなり残存しており、加熱すると空気中の酸素によっ
て酸化され黒褐色に変化するから、封止工程において成
形後加熱すると、半導体装置表面の未反応ノボラック型
フェノール樹脂が酸化され黒褐色となり色ムラとなるの
である。 エポキシ樹脂とノボラック型フェノール樹脂
との組成物では、それらの混合が十分でないと特に色ム
ラが顕著となる傾向がある。 このように外観が黒色で
ある半導体装置では問題とならながった色ムラが、黒色
以外の白色、緑色、透明等の外観の半導体装置では問題
となってきた。(The problem to be solved by the invention!!) In photocouplers, etc., which have white outer legs, conventional resin compositions for semiconductor encapsulation, which are made by mixing and kneading epoxy resin and novolak type phenol resin in the above-mentioned conventional manner, cannot There is a problem of color unevenness occurring on the surface of the device.In other words, there is a considerable amount of unreacted novolac type phenol resin remaining in conventional compositions, and when heated, it is oxidized by oxygen in the air and turns blackish brown. When heated after molding in the sealing process, the unreacted novolak phenolic resin on the surface of the semiconductor device is oxidized and becomes blackish brown, resulting in uneven color.In a composition of epoxy resin and novolak phenolic resin, they are not mixed sufficiently. In this way, color unevenness, which was not a problem with semiconductor devices with a black exterior, becomes a problem with semiconductor devices with a white, green, transparent, etc. exterior other than black. It has become.
本発明は、上記の欠点・問題点を解消・解決するために
なされたもので、色ムラがなく外観特性に優れ、黒色以
外の白色、緑色、透明等外観を有する装置に好適なエポ
キシ樹脂組成物、および同様な長所を有する半導体封止
装置を提供しようとするものである。The present invention has been made in order to eliminate and solve the above-mentioned drawbacks and problems, and provides an epoxy resin composition that has no color unevenness and excellent appearance characteristics, and is suitable for devices having an appearance other than black, such as white, green, transparent, etc. The object of the present invention is to provide a semiconductor encapsulation device having similar advantages.
［発明の梢成］
（課題を解決するための手段）
本発明者は、上記の目的を連成しようと鋭意研究を重ね
た結果、後述の組成物が上記目的を満足させることがで
きることを見い辷し本発明を完成したものである。[Development of the Invention] (Means for Solving the Problems) As a result of extensive research in an attempt to couple the above objects, the present inventor found that the composition described below can satisfy the above objects. As a result, the present invention was completed.
すなわち、本発明は、
（Ａ）エポキシ樹脂中に、ノボラック型フェノールｖＩ
Ｉ脂を、実質的に空気遮断状態で均一・に溶解したフェ
ノール変性エポキシ樹脂、及び
（Ｂ）無機質充填剤
を必須成分とし、前記（Ｂ）無機質充填剤を樹脂組成物
に対して２５〜９０重量％の割合に含有することを特徴
とするエポキシ樹脂組成物、およびその樹脂組成物で封
止した半導体封止装置である。That is, the present invention provides (A) novolak type phenol vI in the epoxy resin.
A phenol-modified epoxy resin in which I fat is uniformly dissolved in a substantially air-blocked state, and (B) an inorganic filler are essential components, and the (B) inorganic filler has a content of 25 to 90% relative to the resin composition. % by weight, and a semiconductor sealing device sealed with the resin composition.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明の（Ａ＞フェノール変性エポキシ樹脂は、エポキ
シ樹脂中にノボラック型フェノール樹脂を実質的に空気
遮断状態で均一に溶解しものである。The phenol-modified epoxy resin (A>phenol-modified epoxy resin of the present invention) is obtained by uniformly dissolving a novolac type phenol resin in an epoxy resin in a substantially air-blocked state.
ここで用いるエポキシ樹脂としては、その分子中にエポ
キシ基を少なくとも２個有する化合物である限り、分子
横道、分子量などに特に限定はなく、一般に使用されて
いるエポキシ樹脂を広く包含することができる。 例え
ばビスフェノール型の芳香族系、シクロヘキサン誘導体
等の脂環族系、さらに次の一般式で示されるエポキシノ
ボラック系等の樹脂が挙げられる。The epoxy resin used here is not particularly limited in molecular width, molecular weight, etc., as long as it is a compound having at least two epoxy groups in its molecule, and can include a wide range of commonly used epoxy resins. Examples include aromatic resins such as bisphenol type, alicyclic resins such as cyclohexane derivatives, and epoxy novolak resins represented by the following general formula.
（但し、式中Ｒ１は水素原子、ハロゲン原子又はアルキ
ル基を、Ｒ２は水素原子又はアルキル基を、ｎは１以上
の整数をそれぞれ表す）
これらのエポキシ樹脂は単独又は２種以上混合して使用
することができる。(However, in the formula, R1 represents a hydrogen atom, a halogen atom, or an alkyl group, R2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins can be used alone or in a mixture of two or more. can do.
またノボラック型フェノール樹脂としては、フェノール
、アルキルフェノール等のフェノール類とホルムアルデ
ヒドあるいはパラホルムアルデヒドを反応させて得られ
るノボラック型フェノール樹脂およびこれらの変性樹脂
、例えばエポキシ化らしくはブチル化ノボラック型フェ
ノール樹脂等が挙げられ、これらは単独又は２種以上混
合して使用することができる。 溶解をするノボラック
型フェノール樹脂の割合は、エポキシ樹脂のエボキシ基
（Ｘ）とノボラック型フェノール樹脂のフェノール性水
酸基（Ｙ）とのモル比［（Ｘ）／（Ｙ）］が０．１〜１
０の範囲内にあることが望ましい、 このモル比が０．
１未満らしくは１０を超えると、耐湿性、成形作業性お
よび硬化物の電気特性が悪くなりいずれの場合も好まし
くない。Examples of novolak phenolic resins include novolac phenolic resins obtained by reacting phenols such as phenol and alkylphenols with formaldehyde or paraformaldehyde, and modified resins thereof, such as butylated novolak phenolic resins for epoxidized products. These can be used alone or in a mixture of two or more. The ratio of the novolac type phenolic resin to be dissolved is such that the molar ratio [(X)/(Y)] of the epoxy group (X) of the epoxy resin and the phenolic hydroxyl group (Y) of the novolac type phenol resin is 0.1 to 1.
It is desirable that this molar ratio be within the range of 0.
If it is less than 1, and if it exceeds 10, the moisture resistance, molding workability, and electrical properties of the cured product will deteriorate, which is undesirable in either case.
エポキシ樹脂中にノボラック型フェノール樹脂を実質的
に空気遮断状態で均一に溶解するには、（ｉ）窒素、ア
ルゴン等の不活性ガス雰囲気中で５０″Ｃ以上に加熱溶
解し均一に溶解するか、（１１）１００ Ｔｏｒｒ以下
の減圧下で５０℃以上に加熱溶融し均一に溶解する。
また、（ｉｉｉ ）常温においてメチルイソブチルゲト
ン等の溶剤にエポキシ樹脂を溶解し、次にノボラック型
フェノール樹脂を加えて均一に溶解し、その後１００Ｔ
ｏｒｒ以下に減圧し５０°Ｃ以上に加熱し溶剤を除去
して得ることかできる。 エポキシ樹脂にノボラック型
フェノール樹脂を均一に溶解する方法は、（ｉ）ないし
く１ｉｉ）の組合せあるいはそれらに準するいかなる方
法でもよい。In order to uniformly dissolve a novolac type phenolic resin in an epoxy resin while substantially excluding air, (i) heat the resin to 50"C or higher in an inert gas atmosphere such as nitrogen or argon to uniformly dissolve it; , (11) Melt by heating to 50° C. or higher under reduced pressure of 100 Torr or lower to uniformly dissolve.
(iii) Dissolve the epoxy resin in a solvent such as methyl isobutyl getone at room temperature, then add the novolac type phenol resin and dissolve it uniformly, then 100T
It can be obtained by reducing the pressure to below orr and heating to above 50°C to remove the solvent. The method for uniformly dissolving the novolac type phenolic resin in the epoxy resin may be a combination of (i) to 1ii) or any method similar thereto.
本発明に使用する（Ｂ）無機質充填剤としては、シリカ
粉末、アルミナ、タルク、三酸化アンチモン、炭酸カル
シウム、チタンホワイト、クレーマイカ、ベンガラ等が
挙げられ、これらは単独もしくは２種以上混合して用い
る。 無機質充填剤の配合割合は、樹脂ｍ放物に対して
２５〜９０重量％含有することが望ましい。 その割合
が２５重量％未満では、耐湿性、耐熱性および機械的特
性更に成形性に劣り好ましくない。 また、９０重量％
を超えるとカサバリが大きくなり成形性が悪く実用に適
さない。Examples of the inorganic filler (B) used in the present invention include silica powder, alumina, talc, antimony trioxide, calcium carbonate, titanium white, clay mica, and red iron oxide, which may be used alone or in combination of two or more. . The blending ratio of the inorganic filler is preferably 25 to 90% by weight based on the weight of the resin. If the proportion is less than 25% by weight, moisture resistance, heat resistance, mechanical properties, and moldability are deteriorated, which is not preferable. Also, 90% by weight
If it exceeds this value, the bulk will increase and the moldability will be poor, making it unsuitable for practical use.
本発明のエポキシ樹脂組成物は、フェノール変性エポキ
シ樹脂及び無機質充填剤を・２−須成分とするが、必要
に応じて例えば天然シックス類、合成ワックス類、直鎖
脂肪酸の金属塩、酸アミド、ニスデル類、パラフィン類
等の離型剤、塩素化パラフィン、ブロムトルエン、ヘキ
サブロムベンゼン、＝酸化アンチモン等の難燃剤、チタ
ンホワイト等の着色剤、シランカンプリング剤、硬化促
進剤などを適宜添加配合することらできる。The epoxy resin composition of the present invention contains a phenol-modified epoxy resin and an inorganic filler as secondary components, but may optionally include natural sixes, synthetic waxes, metal salts of linear fatty acids, acid amides, Mold release agents such as Nisdels and paraffins, flame retardants such as chlorinated paraffin, bromotoluene, hexabromobenzene, and antimony oxide, colorants such as titanium white, silane camping agents, curing accelerators, etc. are added and blended as appropriate. I can do that.
本発明のエポキシ樹脂組成物および半導体封止装置は、
次のようにして製造することができる。The epoxy resin composition and semiconductor sealing device of the present invention include:
It can be manufactured as follows.
フェノール変性エポキシ樹脂、無機質充填剤、その他の
成分を配合し、ミキサー等によって十分均一に混合した
後、さらに熱ロールによる溶融混合処理又はニーダ等に
よる混合処理を行い、次いで冷却固化させ、適当な大き
さに粉砕してエポキシ樹脂組成物とした。 この組成物
を用いて、低圧トランスファー成形や、インジェクショ
ン成形、圧縮成形、注型等によって容易に封止して半導
体封止装置をｌ造することができる。 ここでいう半導
体封止装置とは、例えばフォトカプラ、フォトトランジ
スタ等であって、外観が黒色以外の半導体装置であり、
特に限定されるものではない。After blending the phenol-modified epoxy resin, inorganic filler, and other ingredients and mixing them sufficiently uniformly using a mixer, etc., the mixture is further melt-mixed using hot rolls or mixed using a kneader, etc., and then cooled and solidified to form an appropriate size. The mixture was crushed to obtain an epoxy resin composition. Using this composition, a semiconductor sealing device can be manufactured by easily sealing by low-pressure transfer molding, injection molding, compression molding, casting, or the like. The semiconductor encapsulation device here refers to a semiconductor device such as a photocoupler, a phototransistor, etc. whose appearance is other than black,
It is not particularly limited.
（実施例）
次に本発明を実施例によって具体的に説明するが、本発
明は以下の実施例に限定されるものではない、 以下、
実施例および比較例において「％Ｊとは「重量％」を意
味する。(Examples) Next, the present invention will be specifically explained by examples, but the present invention is not limited to the following examples.
In Examples and Comparative Examples, "%J" means "% by weight".
実施例 １
クレゾールノボラックエポキシ樹脂（エポキシ当量２１
５ ） ６４％と、ノボラック型フェノール樹脂３６％
を、１３０℃、 １０Ｔｏｒｒ ／）窒素雰囲気中で撹
拌混合し、完全にノボラック型フェノール樹脂を溶解し
た後、１０Ｔ ｏｒｒのまま冷却し、常圧に戻して粉砕
しフェノール変性エポキシ樹脂を得た。 次のこのフェ
ノール変性エポキシ樹脂２８％、シリカ粉末６６％、チ
タンホワイト５％および高級脂肪酸エステル１％を常温
で混合し、さらに９０〜９５℃で混練して冷却後、粉砕
してエポキシ樹脂組成物を製造した。 この組成物をタ
ブレット化し、予然してトランスファー成形で１７０℃
に加熱した金型内に注入し硬化させた。 その後１７５
°Ｃで１０時間加熱処理をして半導体封止装置を製造し
た。Example 1 Cresol novolak epoxy resin (epoxy equivalent weight 21
5) 64% and novolac type phenolic resin 36%
were stirred and mixed at 130° C. and 10 Torr/) in a nitrogen atmosphere to completely dissolve the novolac type phenol resin, then cooled at 10 Torr, returned to normal pressure, and pulverized to obtain a phenol-modified epoxy resin. Next, 28% of this phenol-modified epoxy resin, 66% of silica powder, 5% of titanium white, and 1% of higher fatty acid ester are mixed at room temperature, further kneaded at 90 to 95°C, cooled, and crushed to form an epoxy resin composition. was manufactured. This composition was made into tablets and pre-transfer molded at 170°C.
It was injected into a heated mold and allowed to harden. then 175
A semiconductor encapsulation device was manufactured by heat treatment at °C for 10 hours.
実艙例 ２
クレゾールノボラックエポキシ樹脂（エポキシ当１２１
５ ） ６４％をメチルインブチルゲトン３６％に溶解
した。 この溶液に３６％のノボラック型フェノール樹
脂を加えて攪ｔ’ｌ“混合して完全に溶解させる。 そ
の後、１００°Ｃ，１０１’ｏｒｒの条件でメチルイソ
ブチルゲトンを除去し、１０Ｔｏｒｒの状態で冷却し、
常圧に戻して粉砕してフェノール変性エポキシ樹脂を得
た。 以下、実方麩例１と同一にしてエポキシ樹脂組成
物を得て、次いで半導体封止装置を製造した。Example 2 Cresol novolac epoxy resin (epoxy 121
5) 64% was dissolved in 36% methyl imbutyl getone. Add 36% novolac type phenolic resin to this solution and stir to dissolve completely. Then, methyl isobutyl getone is removed at 100°C and 101'orr, and cooled at 10 Torr. death,
The mixture was returned to normal pressure and pulverized to obtain a phenol-modified epoxy resin. Hereinafter, an epoxy resin composition was obtained in the same manner as in Example 1, and then a semiconductor sealing device was manufactured.
比較例
クレゾールノボラックエポキシ樹脂（エポキシ当量２１
５ ＞ １８％、ノボラック型フェノール樹脂１０％、
シリカ粉末６６％、チタンホワイト５％および高級脂肪
酸エステル１％を混合し、以下実施例１と同一にしてエ
ポキシ樹脂組成物を得、また半導体封止装置を製造した
。Comparative example Cresol novolac epoxy resin (epoxy equivalent: 21
5 > 18%, novolak type phenolic resin 10%,
66% of silica powder, 5% of titanium white and 1% of higher fatty acid ester were mixed and the same procedure as in Example 1 was carried out to obtain an epoxy resin composition and to manufacture a semiconductor sealing device.
実施例１〜２および比較例で製造した半導体封止装置を
、目視で外観テストを行った。 その結果を第１表に示
したが本発明は色ムラがなく、本発明の顕著な効果が確
認された。The semiconductor sealing devices manufactured in Examples 1 and 2 and Comparative Example were subjected to a visual appearance test. The results are shown in Table 1, and the present invention had no color unevenness, confirming the remarkable effects of the present invention.
＊：それぞれ１００個の半導体封止装置をつくり、直径
１１以上の黒褐色の斑点のあるるものを不良として示し
た。*: 100 semiconductor encapsulation devices were made for each device, and those with blackish brown spots with a diameter of 11 or more were marked as defective.
［発明の効果コ
以上の説明および第１表から明らかなように、本発明の
エポキシ樹脂組成物は、色ムラがなく外観特性に優れた
もので、白色や緑色又透明等黒色以外の半導体装置の封
止に好適である。 また、このエポキシ樹脂組成物で封
止する半導体封止装置の発明によれば、外装の四度が叩
るくで外観に優れ、信頼性の高い半導体封止装置を製造
することができる。[Effects of the Invention] As is clear from the above description and Table 1, the epoxy resin composition of the present invention has no color unevenness and has excellent appearance characteristics, and can be used for semiconductor devices in colors other than black, such as white, green, and transparent. Suitable for sealing. Further, according to the invention of a semiconductor sealing device that seals with this epoxy resin composition, it is possible to manufacture a semiconductor sealing device that has excellent appearance and high reliability due to the four-sided taping of the exterior.
Claims (1)
樹脂を、実質的に空気遮断状態で 均一に溶解したフェノール変性エポキシ樹 脂、及び （Ｂ）無機質充填剤 を必須成分とし、前記（Ｂ）無機質充填剤を樹脂組成物
に対して２５〜９０重量％の割合に含有することを特徴
とするエポキシ樹脂組成物。 ２ （Ａ）エポキシ樹脂中に、ノボラック型フェノール
樹脂を、実質的に空気遮断状態で 均一に溶解したフェノール変性エポキシ樹 脂、及び （Ｂ）無機質充填剤 を必須成分とし、前記（Ｂ）の無機質充填剤を樹脂組成
物に対して２５〜９０重量％の割合に含有するエポキシ
樹脂組成物で封止したことを特徴とする半導体封止装置
。[Scope of Claims] 1 (A) a phenol-modified epoxy resin in which a novolac type phenol resin is uniformly dissolved in an epoxy resin substantially in an air-blocked state, and (B) an inorganic filler as essential components; (B) An epoxy resin composition containing an inorganic filler in an amount of 25 to 90% by weight based on the resin composition. 2 (A) A phenol-modified epoxy resin in which a novolac type phenol resin is uniformly dissolved in an epoxy resin in a substantially air-blocked state, and (B) an inorganic filler as an essential component, and the inorganic filler of (B) above. 1. A semiconductor sealing device characterized in that the semiconductor sealing device is sealed with an epoxy resin composition containing an agent in an amount of 25 to 90% by weight based on the resin composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27973189A JP2803053B2 (en) | 1989-10-30 | 1989-10-30 | Epoxy resin composition and semiconductor encapsulation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27973189A JP2803053B2 (en) | 1989-10-30 | 1989-10-30 | Epoxy resin composition and semiconductor encapsulation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03143914A true JPH03143914A (en) | 1991-06-19 |
| JP2803053B2 JP2803053B2 (en) | 1998-09-24 |
Family
ID=17615103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27973189A Expired - Fee Related JP2803053B2 (en) | 1989-10-30 | 1989-10-30 | Epoxy resin composition and semiconductor encapsulation device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2803053B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107033630A (en) * | 2017-04-24 | 2017-08-11 | 确成硅化学股份有限公司 | A kind of preparation method of silicon rubber white carbon |
-
1989
- 1989-10-30 JP JP27973189A patent/JP2803053B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107033630A (en) * | 2017-04-24 | 2017-08-11 | 确成硅化学股份有限公司 | A kind of preparation method of silicon rubber white carbon |
| CN107033630B (en) * | 2017-04-24 | 2019-03-29 | 确成硅化学股份有限公司 | A kind of preparation method of silicon rubber white carbon black |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2803053B2 (en) | 1998-09-24 |
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