JPH03141633A - Removal of photoresist on outer periphery of semiconductor wafer - Google Patents
Removal of photoresist on outer periphery of semiconductor waferInfo
- Publication number
- JPH03141633A JPH03141633A JP28049589A JP28049589A JPH03141633A JP H03141633 A JPH03141633 A JP H03141633A JP 28049589 A JP28049589 A JP 28049589A JP 28049589 A JP28049589 A JP 28049589A JP H03141633 A JPH03141633 A JP H03141633A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- wafer
- photoresist film
- outer periphery
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000010453 quartz Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 35
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置製造におけるフォトリングラフィ
工程に関し、特に不定形半導体ウェハーのポジ形フォト
レジスト膜の処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photolithography process in the manufacture of semiconductor devices, and more particularly to a method for processing a positive photoresist film on an amorphous semiconductor wafer.
従来半導体ウェハー上へのフォトレジスト膜の形成は、
スピンオン塗布方式が用いられており、この際半導体外
周部のフォトレジスト膜の除去は、第３図に示す通りス
ピンナーチャック５に固定された半導体ウェハーｌを２
００ｒｐｍ程度で回転させながら半導体ウェハー１の裏
面側に外周より３〜１０ｍｍ内側に設けられたノスル６
よりＭＥＫ等の溶剤を半導体ウェハー１に吹き付けるこ
により行っていた。Conventionally, the formation of a photoresist film on a semiconductor wafer is
A spin-on coating method is used to remove the photoresist film on the outer periphery of the semiconductor, as shown in FIG.
While rotating at about 0.00 rpm, a nostle 6 is provided on the back side of the semiconductor wafer 1 3 to 10 mm inside from the outer periphery.
This has been done by spraying a solvent such as MEK onto the semiconductor wafer 1.
上述した従来の半導体ウェハー外周部のフォトレジスト
膜除去方法は半導体ウェハー外周部とノズルとの間の距
離が変動したり、半導体ウェハーに角があったりすると
除去されるフォトレジス）・膜の面積が大きく変動する
欠点があった。In the conventional method for removing the photoresist film on the outer periphery of a semiconductor wafer, as described above, if the distance between the outer periphery of the semiconductor wafer and the nozzle changes or the semiconductor wafer has a corner, the area of the photoresist film may be There was a drawback that it varied greatly.
このため、光半導体素子用化合物半導体ウェハー等の矩
形半導体ウェハーや不定形半導体ウェハーに、従来の半
導体ウェハー外周部のフォトレジスト膜除去方法を適用
しても完全なフォトレジスト除去は行われず、半導体ウ
ェハー外周部に付着したフォトレジスト膜が治工具量と
の接触によりゴミとなったり、高粘度のフォトレジスト
を用いた場合に起こる半導体ウェハー外周部のレジスト
盛り上りにより安定した工程が得られなかった。For this reason, even if conventional methods for removing photoresist films from the outer periphery of semiconductor wafers are applied to rectangular semiconductor wafers such as compound semiconductor wafers for optical semiconductor devices or irregularly shaped semiconductor wafers, complete photoresist removal is not achieved, and the semiconductor wafer A stable process could not be obtained due to the photoresist film adhering to the outer periphery turning into dust due to contact with jigs and tools, and resist build-up on the outer periphery of the semiconductor wafer that occurs when a high viscosity photoresist is used.
本発明によれば、半導体ウェハーの裏面側より紫外光を
照射し回折または多重反射により半導体ウェハー表面外
周部のポジ形フォトレジスト膜の露光を行なう工程と、
露光されたフォトレジスト膜を現像液を用いて現像し除
去する工程とを含む半導体ウェハー外周部ポジ形フォト
レジスト除去方法を得る。According to the present invention, a step of irradiating ultraviolet light from the back side of the semiconductor wafer and exposing a positive photoresist film on the outer peripheral part of the semiconductor wafer surface by diffraction or multiple reflection;
A method for removing a positive photoresist on the outer periphery of a semiconductor wafer is obtained, which includes a step of developing and removing an exposed photoresist film using a developer.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の一実施例の半導体裏面から紫外光を照
射する工程について示している。FIG. 1 shows the process of irradiating ultraviolet light from the back surface of a semiconductor according to an embodiment of the present invention.
半導体ウェハーｌは石英板２上に裏面が石英板２に接す
るように置かれ、その上部にＡｆｆｌ蒸着膜によるミラ
ー３が配置されている。本実施例では、この状態で石英
板２を通して紫外光４を照射することにより半導体ウェ
ハー１のエッヂ部で光を回折させ、内側へ廻り込んだ紫
外光をミラー３と半導体ウェハー１との間で多重反射さ
せることにより半導体ウェハ−１外周部のポジ形フ１）
レジスト膜の露光を行ない、しかる後に現像液を用いて
現像を行なうこにより被露光領域のポジ形フォトレジス
ト膜を除去するものである。A semiconductor wafer 1 is placed on a quartz plate 2 so that its back surface is in contact with the quartz plate 2, and a mirror 3 made of an Affl vapor-deposited film is placed above it. In this embodiment, by irradiating ultraviolet light 4 through the quartz plate 2 in this state, the light is diffracted at the edge of the semiconductor wafer 1, and the ultraviolet light that has circulated inward is transmitted between the mirror 3 and the semiconductor wafer 1. By performing multiple reflections, the positive image on the outer periphery of the semiconductor wafer 11)
The resist film is exposed to light and then developed using a developer to remove the positive photoresist film in the exposed area.
第２図は本発明の他の実施例で用いる半導体ウェハー裏
面からの紫外光の照射方法について示す。半導体ウェハ
ー１はスピンナーチャック５に裏面が接するように真空
吸着される。本実施例は、スピンナーチャック５を回転
させることにより半導体ウェハー１を回転させながら半
導体ウニノ＼−１の表面と同一平面より１°〜３°程度
の傾きをもって半導体ウェハー１の裏面側より紫外光４
を照射し、半導体ウェハー１のエッヂ部による回７折、
フォトレジスト膜に紫外光４が入射する際の屈折により
半導体ウェハー１の内側へ廻り込む紫外光により半導体
ウェハ−１外周部のフォトレジスト膜を露光しその後現
像を行なうことによりこれを除去するものである。FIG. 2 shows a method of irradiating ultraviolet light from the back surface of a semiconductor wafer used in another embodiment of the present invention. The semiconductor wafer 1 is vacuum suctioned so that its back surface is in contact with the spinner chuck 5. In this embodiment, while rotating the semiconductor wafer 1 by rotating the spinner chuck 5, ultraviolet light 4 is applied from the back side of the semiconductor wafer 1 at an angle of about 1° to 3° from the same plane as the surface of the semiconductor wafer 1.
7 times due to the edge of the semiconductor wafer 1,
The photoresist film on the outer periphery of the semiconductor wafer 1 is exposed to the ultraviolet light that circulates inside the semiconductor wafer 1 due to refraction when the ultraviolet light 4 is incident on the photoresist film, and is then removed by development. be.
以上説明したように、本発明は、半導体ウェハー裏面よ
り紫外光を照射し回折、多重反射２等により紫外光が半
導体ウェハー表面へ廻込む現象を利用して半導体ウェハ
ー外周のポジ形フォトレジスト膜を露光するため、半導
体ウェハーの形状に影習を受けず安定して半導体ウェハ
ー外周部のポジ形フォトレジスト膜を除去できる効果が
ある。As explained above, the present invention utilizes the phenomenon in which ultraviolet light is irradiated from the back surface of a semiconductor wafer and circulates to the surface of the semiconductor wafer due to diffraction, multiple reflection 2, etc. to form a positive photoresist film on the outer periphery of the semiconductor wafer. Since exposure is performed, the positive photoresist film on the outer periphery of the semiconductor wafer can be stably removed without being affected by the shape of the semiconductor wafer.
第１図は本発明の一実施例における紫外線の照射方式に
ついて示す図、第２図は本発明の他の実施例における紫
外線の照射方式について示す図、第３図は従来の半導体
ウェハー外周部のフォトレジスト膜除去方法を示す図で
ある。
１・・・・・・半導体ウェハー ２・・・・・・石英板
、３・・・・・・ミラー ４・・・・・・紫外光、５・
・・・・・スピンナーチャック、６・・・・・・ノズル
。FIG. 1 is a diagram showing an ultraviolet irradiation method in one embodiment of the present invention, FIG. 2 is a diagram showing an ultraviolet ray irradiation method in another embodiment of the present invention, and FIG. 3 is a diagram showing a conventional semiconductor wafer outer periphery. FIG. 3 is a diagram showing a photoresist film removal method. 1... Semiconductor wafer 2... Quartz plate, 3... Mirror 4... Ultraviolet light, 5...
...Spinner chuck, 6...Nozzle.
Claims (1)
像液を用いて現像する工程とを含むことを特徴とする半
導体ウェハー外周部のフォトレジスト除去方法。1. A method for removing photoresist from the outer periphery of a semiconductor wafer, comprising the steps of irradiating ultraviolet light from the back side of the semiconductor wafer and developing with a developer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28049589A JPH03141633A (en) | 1989-10-26 | 1989-10-26 | Removal of photoresist on outer periphery of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28049589A JPH03141633A (en) | 1989-10-26 | 1989-10-26 | Removal of photoresist on outer periphery of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03141633A true JPH03141633A (en) | 1991-06-17 |
Family
ID=17625881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28049589A Pending JPH03141633A (en) | 1989-10-26 | 1989-10-26 | Removal of photoresist on outer periphery of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03141633A (en) |
-
1989
- 1989-10-26 JP JP28049589A patent/JPH03141633A/en active Pending
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