JPH03136329A - Cleaning method for silicon substrate surface - Google Patents
Cleaning method for silicon substrate surfaceInfo
- Publication number
- JPH03136329A JPH03136329A JP27563989A JP27563989A JPH03136329A JP H03136329 A JPH03136329 A JP H03136329A JP 27563989 A JP27563989 A JP 27563989A JP 27563989 A JP27563989 A JP 27563989A JP H03136329 A JPH03136329 A JP H03136329A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- silicon surface
- oxide film
- silicon substrate
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 59
- 239000010703 silicon Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000004140 cleaning Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 30
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 25
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000356 contaminant Substances 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 8
- 239000001301 oxygen Substances 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010419 fine particle Substances 0.000 abstract description 4
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 230000005855 radiation Effects 0.000 abstract 4
- 239000012530 fluid Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- 238000005530 etching Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、シリコン基板表面の清浄化方法に関し、特に
、半導体装置製造工程などにおいて行われる熱処理工程
や薄膜形成工程前の清浄化処理に好適で、半導体装置の
歩留りを一段と向上させることのできる処理方法に関す
る。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for cleaning the surface of a silicon substrate, and is particularly suitable for cleaning treatment before a heat treatment process or a thin film formation process performed in a semiconductor device manufacturing process. The present invention relates to a processing method that can further improve the yield of semiconductor devices.
（従来の技術）
従来、この種の清浄化処理方法においては、酸化剤を含
む洗浄液を用いて酸化膜を形成し、弗酸により上記酸化
膜を除去する方法が用いられていた。(Prior Art) Conventionally, in this type of cleaning treatment method, a method has been used in which an oxide film is formed using a cleaning solution containing an oxidizing agent, and the oxide film is removed using hydrofluoric acid.
この方法は、第２図に示すように、シリコン基板１．を
容器２中の酸系（塩酸十過酸化水素＋純水など）あるい
はアルカリ系（アンモニア十過酸化水素十純水など）の
洗浄液３に浸しく第２図Ａ）、過酸化水素などから発生
する活性な酸素を利□用してシリコン表面に薄い酸化膜
４を形成しく第２図Ｂ）、純水でリンスした後、弗酸を
含む純水５中で酸化膜４を除去し、必要な場合は上記の
工程を繰り返して清浄なシリコン表面６を形成する（第
２図Ｃ）ものである、この方法では、アルカリ系洗浄液
によるシリコン表面のエツチング効果および洗浄液によ
り形成された酸化膜が弗酸により除去されることによる
シリコン表面のエツチング効果により、シリコン表面付
近に含まれていた汚染物質を除去することができる。In this method, as shown in FIG. 2, a silicon substrate 1. is immersed in an acid-based (hydrochloric acid, hydrogen peroxide, pure water, etc.) or alkaline-based (ammonia, hydrogen peroxide, and pure water, etc.) cleaning solution 3 in a container 2. A thin oxide film 4 is formed on the silicon surface using active oxygen (Fig. 2B), and after rinsing with pure water, the oxide film 4 is removed in pure water 5 containing hydrofluoric acid. In this case, the above steps are repeated to form a clean silicon surface 6 (FIG. 2C). In this method, the etching effect of the alkaline cleaning solution on the silicon surface and the oxidation film formed by the cleaning solution are removed. Due to the etching effect on the silicon surface caused by removal with acid, contaminants contained near the silicon surface can be removed.
しかし、この方法では、洗浄液４の原料として、高純度
で微粒子を含まない塩酸、アンモニア、過酸化水素など
の薬液を安価に得ることが困難であるため、薬液中の不
純物や微粒子がシリコン表面に残留するという欠点があ
った。However, with this method, it is difficult to obtain high-purity, particulate-free chemicals such as hydrochloric acid, ammonia, and hydrogen peroxide at low cost as raw materials for the cleaning liquid 4, so impurities and particulates in the chemicals are deposited onto the silicon surface. The drawback was that it remained.
さらに、シリコン表面付近に非常に強固な汚染が存在し
ていた場合、例えば、イオン注入やりアクティブ・イオ
ン・エツチングなどの工程により、シリコン表面から比
較的深い領域に汚染物質が導入されていた場合や、表面
に変質したレジストが残存していたなどの場合は、この
方法の標準的な工程では充分汚染物質を除去することが
できなかった。Furthermore, if there is very strong contamination near the silicon surface, for example, if the contaminant has been introduced into a relatively deep region from the silicon surface by a process such as ion implantation or active ion etching, In some cases, such as when degraded resist remained on the surface, the standard steps of this method could not sufficiently remove the contaminants.
このような場合、アルカリ系洗浄液によるシリコン表面
のエツチングを長時間行ったり、上記工程を繰り返し行
う工程も試みられた。しかし、アルカリ系洗浄液による
シリコン表面のエツチングを長時間行う場合は、エツチ
ング量の制御が困難であるという問題が生じた。また、
上記工程を繰り返し行う場合は、洗浄液による処理後の
リンスに１回１０分間程度を要するため、全体の処理時
間が長くなるという問題が生じた。In such cases, attempts have been made to etch the silicon surface with an alkaline cleaning solution for a long time, or to repeat the above steps repeatedly. However, when etching the silicon surface with an alkaline cleaning solution for a long time, a problem arises in that it is difficult to control the amount of etching. Also,
When the above steps are repeated, it takes about 10 minutes each time to rinse with a cleaning solution after the treatment, which causes a problem that the overall treatment time becomes longer.
（発明が解決しようとする課題）
上述した従来技術における問題点を解決するため、上記
の背景に立ち、酸素やオゾンを含むガス中で、紫外線を
シリコン基板に照射することにより、または、加熱した
シリコン基板にオゾンを含むガスを吹き付けることによ
り、シリコン表面に薄い酸化膜を形成し、弗酸により上
記酸化膜を除去する方法も行われていた。(Problems to be Solved by the Invention) In order to solve the problems in the prior art described above, based on the above background, a silicon substrate is irradiated with ultraviolet rays in a gas containing oxygen or ozone, or heated. Another method has been used in which a thin oxide film is formed on the silicon surface by spraying a gas containing ozone onto the silicon substrate, and the oxide film is removed using hydrofluoric acid.
この方法は、例えば第３図に示すように、シリコン基板
１を、容、１２内に収納し、オゾンを含むガス７中に置
き（第３図Ａ）、紫外線照射（８は紫外線光源を示す）
によりオゾンから発生する活性な酸素を利用しシリコン
表面を清浄化し、また、表面に薄い酸化膜４を形成しく
第３図Ｂ）、つぎに弗酸を含む純水５中で酸化膜４を除
去し、必要な場合は上記の工程を繰り返して、清浄なシ
リコン表面６を形成するもの（第３図Ｃ）である。この
方法では、ガス中の活性な酸素により変質したレジスト
が除去され、また、ガス中の活性な酸素によりシリコン
表面が酸化されて形成された酸化膜が弗酸により除去さ
れるシリコン表面のエツチング効果により、シリコン表
面付近に含まれていた汚染物質を除去することができる
。In this method, for example, as shown in FIG. 3, a silicon substrate 1 is housed in a container 12, placed in a gas 7 containing ozone (FIG. 3A), and irradiated with ultraviolet light (8 indicates an ultraviolet light source). )
The silicon surface is cleaned using active oxygen generated from ozone and a thin oxide film 4 is formed on the surface (Fig. 3B), and then the oxide film 4 is removed in pure water 5 containing hydrofluoric acid. However, if necessary, the above steps are repeated to form a clean silicon surface 6 (FIG. 3C). In this method, the active oxygen in the gas removes the altered resist, and the active oxygen in the gas oxidizes the silicon surface to remove the oxide film that is formed using hydrofluoric acid. As a result, contaminants contained near the silicon surface can be removed.
この方法では、不純物や微粒子を含まない酸素ガスやオ
ゾンガスを得ることが洗浄液の場合に比べ容易に安価に
できるため、不純物や微粒子がシリコン表面に残留する
問題を回避できる。また、１回の酸化膜形成と酸化膜除
去の工程によりエツチングされるシリコン厚はｌｎ＋ｓ
以下であるため、上記工程の繰り返しにより適当なエツ
チング厚に制御できる。With this method, it is possible to obtain oxygen gas or ozone gas that does not contain impurities or particulates easily and at a lower cost than when using a cleaning liquid, so it is possible to avoid the problem of impurities or particulates remaining on the silicon surface. Furthermore, the silicon thickness etched by one oxide film formation and oxide film removal process is ln+s
Since the etching thickness is as follows, the etching thickness can be controlled to an appropriate value by repeating the above steps.
しかし、シリコン表面から比較的深い領域に残存する汚
染物質を除去するために、上記のようなガス中酸化と液
中エツチング工程を繰り返し行う場合、液中からガス中
にシリコン基板を移動する際の乾燥処理も繰り返し行う
必要があるために、全体の工程に長時間を要するという
問題が生じた。However, when the above-mentioned in-gas oxidation and in-liquid etching processes are repeated in order to remove contaminants remaining in a relatively deep region from the silicon surface, there is a Since the drying process also needs to be repeated, a problem arises in that the entire process takes a long time.
また、この乾燥処理が不十分な場合、部分的に残留した
水滴部にウォーターマークとよばれる染みが生じ、ゲー
ト酸化などの半導体装置製造工程の障害となった。Furthermore, if this drying process is insufficient, stains called watermarks occur in the partially remaining water droplets, which impede semiconductor device manufacturing processes such as gate oxidation.
（課題を解決するための手段）
本発明のシリコン基板表面の清浄化方法は、オゾンを含
む純水中で紫外線照射することによる酸化膜形成工程と
、弗酸を含む純水中での酸化膜除去工程とから構成され
ているため、工程間に乾燥処理を行う必要がなく、純度
が高く微粒子の少ない液中でシリコン基板表面の清浄化
を行うことができる。(Means for Solving the Problems) The method of cleaning the surface of a silicon substrate of the present invention includes a step of forming an oxide film by irradiating ultraviolet rays in pure water containing ozone, and a step of forming an oxide film in pure water containing hydrofluoric acid. Since the method is comprised of a removal step, there is no need to perform a drying process between steps, and the silicon substrate surface can be cleaned in a liquid with high purity and few particles.
（作用）
本発明では、シリコン表面に薄い酸化膜を形成し、これ
を除去することによるシリコン表面の清浄化処理を、洗
浄液からの不純物や微粒子などを残留させずに行うこと
ができ、かつ、工程を繰り返し行う場合でも比較的短時
間に行うことができる。(Function) In the present invention, a silicon surface can be cleaned by forming and removing a thin oxide film on the silicon surface without leaving any impurities or fine particles from the cleaning solution, and Even when the process is repeated, it can be done in a relatively short time.
（実施例）
以下に、本発明の一実施例を挙げ、図面を参照しながら
さらに詳細に説明する。なお、本実施例は一つの例示で
あって、本発明の技術的思想を逸脱しない範囲で種々の
変更あるいは改良を行いうることは言うまでもない。(Example) Hereinafter, an example of the present invention will be described in more detail with reference to the drawings. It should be noted that this embodiment is merely an illustration, and it goes without saying that various changes and improvements can be made without departing from the technical idea of the present invention.
第１図に示すように、まず、シリコン基板ｌを容器２中
のオゾンを含む純水９に浸す（第１図Ａ）。As shown in FIG. 1, first, a silicon substrate 1 is immersed in pure water 9 containing ozone in a container 2 (FIG. 1A).
ここで、シリコン基板は適当な洗浄法により洗浄し、汚
染物をほぼ除去しておくことが望ましい。Here, it is desirable that the silicon substrate be cleaned by an appropriate cleaning method to remove most of the contaminants.
容器２としては、紫外線を透過する石英などの容器を用
いればよい、オゾンを含む純水９は、純水にオゾンを含
むガス、例えば放電型オソナイザーにより形成したオゾ
ンを５％程度含む酸素ガスなどをバブリングをさせるか
、電気分解法により直接純水から形成すればよい、純水
に溶存するオゾンの濃度は、数ｐｐｍ程度のオーダーに
なる。As the container 2, a container such as quartz that transmits ultraviolet rays may be used.The ozone-containing pure water 9 is a gas containing ozone in pure water, such as an oxygen gas containing about 5% ozone formed by a discharge type osonizer. Ozone can be formed directly from pure water by bubbling or by electrolysis.The concentration of ozone dissolved in pure water is on the order of several ppm.
次に紫外線光源８からオゾンを含む純水９に紫外線を照
射し、紫外線の効果によりオゾンが分解して発生する活
性な酸素を利用して、変質したレジストなどを除去し、
また、シリコン表面に薄い酸化膜４を形成する（第１図
Ｂ）、ここで、紫外線光源８としては、例えば低圧また
は高圧の水銀ランプなどを１０〜１００ｍＷ／ ｃｍ”
程度の紫外線照度になるように組み合わせて用いればよ
い、紫外線として波長１８５ｎａ＋の照度が充分大きけ
れば、紫外線によりＨ，０が分解してできる活性なＯＨ
により純水中およびシリコン基板表面に存在する低分子
の有機物を分解することが可能である。また、波長２５
４ｎａ＋の紫外線による殺菌効果も期待できる。Next, ultraviolet light is irradiated from the ultraviolet light source 8 to the pure water 9 containing ozone, and active oxygen generated by decomposing ozone due to the effect of the ultraviolet light is used to remove the deteriorated resist and the like.
In addition, a thin oxide film 4 is formed on the silicon surface (FIG. 1B). Here, as the ultraviolet light source 8, for example, a low-pressure or high-pressure mercury lamp or the like is used with a power of 10 to 100 mW/cm".
If the illuminance of UV light with a wavelength of 185 na+ is large enough, active OH, which is formed by the decomposition of H,0, by UV light
It is possible to decompose low-molecular organic substances present in pure water and on the surface of a silicon substrate. Also, wavelength 25
The sterilizing effect of 4Na+ ultraviolet light can also be expected.
次に、シリコン基板１を純水で短時間リンスする。この
リンス時間は、紫外線により生じた活性な酸素の寿命が
短く、また、純水中のオゾン濃度も数ｐｐｍ程度と低い
ため、１〜５分間程度でよい。Next, the silicon substrate 1 is rinsed with pure water for a short time. The rinsing time may be about 1 to 5 minutes because the life of active oxygen generated by ultraviolet rays is short and the ozone concentration in pure water is as low as several ppm.
その後、弗酸を含む純水５中で酸化膜４を除去しく第１
図Ｃ）、さらに、シリコン基板１を純水で例えば１〜１
０分間リンスする。ここで、弗酸の濃度は、例えば０．
１〜５％程度でよく、酸化［４が適当なエツチング時間
で除去でき、また、リンスに要する時間が短時間ですむ
濃度を選べばよい。After that, a first step is carried out to remove the oxide film 4 in pure water 5 containing hydrofluoric acid.
Figure C), further, the silicon substrate 1 is soaked with pure water for example 1 to 1
Rinse for 0 minutes. Here, the concentration of hydrofluoric acid is, for example, 0.
The concentration may be about 1 to 5%, and it is sufficient to select a concentration that allows oxidation [4] to be removed in an appropriate etching time and that requires a short time for rinsing.
必要な場合は上記の各工程を繰り返して、清浄なシリコ
ン表面６を形成する０以上の工程は、同一の容器で液を
置換しながら行ってもよく、容器間の搬送時にシリコン
基板が汚染される恐れがない場合は、オゾンを含む純水
、リンス用純水、弗酸を含む純水の各々に別個の容器を
用いて液置換に要する待命を節約してもよい。If necessary, the above steps may be repeated to form a clean silicon surface 6. Zero or more steps may be performed in the same container while replacing the liquid, to avoid contamination of the silicon substrate during transportation between containers. If there is no risk of liquid replacement, separate containers may be used for pure water containing ozone, pure water for rinsing, and pure water containing hydrofluoric acid to save time required for liquid replacement.
以上述べたように、本発明の方法では、紫外線を照射し
たオゾンを含む純水中の処理により、表面の有機物が除
去され、また、形成された酸化膜が弗酸で除去され、そ
の結果としてシリコン表面が制御性よくエツチングでき
るため、シリコン表面付近に含まれていた汚染物質を除
去することができる。As described above, in the method of the present invention, organic substances on the surface are removed by treatment in pure water containing ozone and irradiated with ultraviolet rays, and the formed oxide film is removed with hydrofluoric acid. Since the silicon surface can be etched with good control, contaminants contained near the silicon surface can be removed.
本発明によるシリコン基板表面の清浄化方法を半導体装
置の製造工程に用いることにより、従来技術による清浄
化方法を用いた場合に比べ、不純物や微粒子をシリコン
表面に在留させずに、シリコン表面を制御性よ（エツチ
ングして、イオン注入やりアクティブ・イオン・エツチ
ングなどの工程により生じた変質したレジストやシリコ
ン表面付近に導入された汚染物質を除去することができ
、半導体装置の歩留りを向上させることができた。By using the silicon substrate surface cleaning method according to the present invention in the manufacturing process of semiconductor devices, the silicon surface can be controlled without causing impurities or fine particles to remain on the silicon surface, compared to when cleaning methods using conventional technology are used. Etching can remove degraded resist caused by processes such as ion implantation and active ion etching, as well as contaminants introduced near the silicon surface, improving the yield of semiconductor devices. did it.
（発明の効果）
以上詳細に説明したように、本発明を用いれば、紫外線
を照射したオゾンを含む純水中の処理により形成された
酸化膜を弗酸で除去する工程、あるいは必要に応じて、
これを繰り返すことにより、容易で安価に不純物や微粒
子を含まない材料による清浄化処理ができるため、不純
物や微粒子がシリコン表面に残留する問題を回避でき、
また、シリコン表面が制御性よ（エツチングできるため
、イオン注入やりアクティブ・イオン・エツチングなど
の工程により生じた変質したレジストやシリコン表面付
近に含まれていた汚染物質を除去することができるとい
う利点がある。これにより、本発明を半導体装置の製造
工程に用いれば、半導体装置の歩留りを一段と向上させ
る効果を有する。(Effects of the Invention) As explained in detail above, if the present invention is used, the oxide film formed by treatment in pure water containing ozone irradiated with ultraviolet rays can be removed with hydrofluoric acid, or if necessary, ,
By repeating this process, it is possible to easily and inexpensively perform a cleaning treatment using a material that does not contain impurities or particles, thereby avoiding the problem of impurities or particles remaining on the silicon surface.
In addition, since the silicon surface can be etched in a controlled manner, it is possible to remove degraded resist caused by processes such as ion implantation and active ion etching, as well as contaminants contained near the silicon surface. Therefore, if the present invention is used in the manufacturing process of semiconductor devices, it has the effect of further improving the yield of semiconductor devices.
第１図は本発明の実施例を示す工程図、第２回及び第３
図は従来法を示す工程図である。
１・・・・・シリコン基板
２・・・・・容器
３・・・・・洗浄液
４・・・・・酸化膜
・・弗酸を含む純水
・清浄なシリコン表面
・オゾンを含むガス
・・紫外線光源
・オゾンを含む純水Figure 1 is a process diagram showing an example of the present invention, the second and third
The figure is a process diagram showing a conventional method. 1... Silicon substrate 2... Container 3... Cleaning liquid 4... Oxide film... Pure water containing hydrofluoric acid, Clean silicon surface, Gas containing ozone... Pure water containing ultraviolet light source and ozone
Claims (1)
水に紫外線を照射することにより、シリコン表面に酸化
膜を形成する工程と、前記工程の後に弗酸を含む純水中
で前記酸化膜を除去する工程とを含むことを特徴とする
シリコン基板表面の清浄化方法。A step of holding a silicon substrate in pure water containing ozone and irradiating the pure water with ultraviolet rays to form an oxide film on the silicon surface; and after the step, placing the oxide film in pure water containing hydrofluoric acid. A method for cleaning a surface of a silicon substrate, the method comprising the step of removing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27563989A JPH03136329A (en) | 1989-10-23 | 1989-10-23 | Cleaning method for silicon substrate surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27563989A JPH03136329A (en) | 1989-10-23 | 1989-10-23 | Cleaning method for silicon substrate surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03136329A true JPH03136329A (en) | 1991-06-11 |
Family
ID=17558266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27563989A Pending JPH03136329A (en) | 1989-10-23 | 1989-10-23 | Cleaning method for silicon substrate surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03136329A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0567939A2 (en) * | 1992-04-29 | 1993-11-03 | Texas Instruments Incorporated | Method of removing small particles from a surface |
| JPH06260480A (en) * | 1993-01-08 | 1994-09-16 | Nec Corp | Method and device for wet treatment |
| WO1995002895A1 (en) * | 1993-07-16 | 1995-01-26 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| WO1996021242A1 (en) * | 1995-01-06 | 1996-07-11 | Tadahiro Ohmi | Cleaning method |
| KR19990039400A (en) * | 1997-11-12 | 1999-06-05 | 윤종용 | Cleaning solution for semiconductor device manufacturing process and removing photoresist and polymer using same |
| US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
| US6667238B1 (en) | 1999-04-08 | 2003-12-23 | Ebara Corporation | Polishing method and apparatus |
-
1989
- 1989-10-23 JP JP27563989A patent/JPH03136329A/en active Pending
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0567939A2 (en) * | 1992-04-29 | 1993-11-03 | Texas Instruments Incorporated | Method of removing small particles from a surface |
| JPH06260480A (en) * | 1993-01-08 | 1994-09-16 | Nec Corp | Method and device for wet treatment |
| US5776296A (en) * | 1993-07-16 | 1998-07-07 | Legacy Systems, Inc. | Apparatus for the treatment of semiconductor wafers in a fluid |
| AU699567B2 (en) * | 1993-07-16 | 1998-12-10 | Legacy Systems, Inc. | Process for the treatment of semiconductor wafers in a fluid |
| EP0708981A1 (en) * | 1993-07-16 | 1996-05-01 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| KR100365529B1 (en) * | 1993-07-16 | 2003-03-06 | 레가시 시스템즈, 인코포레이티드 | Apparatus for treating semiconductor wafers with fluids and gas diffusers used in such apparatuses |
| EP0708981A4 (en) * | 1993-07-16 | 1997-03-12 | Legacy Systems Inc | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| US5727578A (en) * | 1993-07-16 | 1998-03-17 | Legacy Systems, Inc. | Apparatus for the treatment and drying of semiconductor wafers in a fluid |
| WO1995002895A1 (en) * | 1993-07-16 | 1995-01-26 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| CN1079580C (en) * | 1993-07-16 | 2002-02-20 | 莱格西***公司 | Process and apparatus for the treatment of semiconductor wafers in a fluid |
| US5911837A (en) * | 1993-07-16 | 1999-06-15 | Legacy Systems, Inc. | Process for treatment of semiconductor wafers in a fluid |
| US5954885A (en) * | 1995-01-06 | 1999-09-21 | Ohmi; Tadahiro | Cleaning method |
| WO1996021242A1 (en) * | 1995-01-06 | 1996-07-11 | Tadahiro Ohmi | Cleaning method |
| KR19990039400A (en) * | 1997-11-12 | 1999-06-05 | 윤종용 | Cleaning solution for semiconductor device manufacturing process and removing photoresist and polymer using same |
| US6667238B1 (en) | 1999-04-08 | 2003-12-23 | Ebara Corporation | Polishing method and apparatus |
| US7101259B2 (en) | 1999-04-08 | 2006-09-05 | Ebara Corporation | Polishing method and apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3320549B2 (en) | Film removing method and film removing agent | |
| JP2581268B2 (en) | Semiconductor substrate processing method | |
| US6551409B1 (en) | Method for removing organic contaminants from a semiconductor surface | |
| US6743301B2 (en) | Substrate treatment process and apparatus | |
| JP2760418B2 (en) | Semiconductor wafer cleaning solution and method for cleaning semiconductor wafer using the same | |
| US6491763B2 (en) | Processes for treating electronic components | |
| JPH1027771A (en) | Cleaning method and device | |
| JPH11121417A (en) | Treating system and treating method for semiconductor substrates | |
| JPH06314679A (en) | Cleaning method of semiconductor substrate | |
| JP2001015472A (en) | Method and device for projecting ultraviolet ray | |
| JP4088810B2 (en) | Substrate cleaning apparatus and substrate cleaning method | |
| KR100229687B1 (en) | Method for removing organic thin film | |
| KR960026331A (en) | Cleaning Method of Semiconductor Substrate and Manufacturing Method of Semiconductor Device | |
| JP2001077069A (en) | Substrate treating method and substrate treating device | |
| JPH03136329A (en) | Cleaning method for silicon substrate surface | |
| JP3125753B2 (en) | Substrate cleaning method and substrate cleaning apparatus | |
| JPS62272541A (en) | Surface treating method for semiconductor substrate | |
| JP2002192089A (en) | Cleaning method | |
| JP3445765B2 (en) | Substrate surface treatment method for semiconductor element formation | |
| JP2006073747A (en) | Method and device for treating semiconductor wafer | |
| JP2004296463A (en) | Cleaning method and cleaning device | |
| JP3196963B2 (en) | How to remove organic matter | |
| JP2843946B2 (en) | Silicon substrate surface cleaning method | |
| JP2002018379A (en) | Thin film peeling method, thin film peeling device and method for manufacturing electronic device | |
| JP2006007052A (en) | Method and apparatus for cleaning of electronic part |