JPH03129783A - Substrate having infrared ray reflective property - Google Patents
Substrate having infrared ray reflective propertyInfo
- Publication number
- JPH03129783A JPH03129783A JP1246875A JP24687589A JPH03129783A JP H03129783 A JPH03129783 A JP H03129783A JP 1246875 A JP1246875 A JP 1246875A JP 24687589 A JP24687589 A JP 24687589A JP H03129783 A JPH03129783 A JP H03129783A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconductor
- substrate
- film
- crystal structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 239000002887 superconductor Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 150000002603 lanthanum Chemical class 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 229910052746 lanthanum Inorganic materials 0.000 abstract 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 abstract 2
- 229910002561 K2NiF4 Inorganic materials 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、赤外線反射性能を有し、かつ、可視光線の一
部を透過する基板に関し、とりわけ１〜１００μ園の広
い波長範囲にわたって反射性能を有する窓材に適した基
板に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a substrate that has infrared reflective performance and transmits part of visible light, and in particular has reflective performance over a wide wavelength range of 1 to 100 μm. The present invention relates to a substrate suitable for a window material.
従来、２．５〜１００μ鴎の赤外線波長域の輻射エネル
ギに対して反射性能を有する基板としては、酸化錫膜の
如き半導体膜を基板に被覆したものがある。Conventionally, as a substrate having a reflective performance for radiant energy in the infrared wavelength range of 2.5 to 100 μm, there is a substrate coated with a semiconductor film such as a tin oxide film.
しかしながら従来の技術では、波長が２．５μ園より大
きい輻射エネルギに対しては高い反射性能が得られるが
、２．５μ園より短い波長の輻射エネルギに対しては高
い反射性能が得られないという問題があった０本発明は
、前記した問題点を改善する、すなわち近赤外の波長域
である１〜２．５μｍの波長の輻射エネルギをもよく反
射し、かつ、可視光線の一部を透過する赤外線反射性能
を有する基板を提供することにある。However, with conventional technology, high reflection performance can be obtained for radiant energy with a wavelength larger than 2.5 μm, but high reflection performance cannot be obtained for radiant energy with a wavelength shorter than 2.5 μm. The present invention improves the above-mentioned problems, that is, it reflects well even radiant energy in the wavelength range of 1 to 2.5 μm, which is the near-infrared wavelength range, and also reflects part of visible light. An object of the present invention is to provide a substrate having transmitting infrared reflective performance.
本発明は、透明な基板に超電導エネルギギャップが０．
０２〜１．６ｅシ超電導体からなる薄膜が被覆された赤
外線反射性能を有する基板である０本発明にかかる超電
導体の薄膜の超電導エネルギギャップは、０．０２ｅＶ
以上であることが必要である。The present invention provides a transparent substrate with a superconducting energy gap of 0.
02-1.6e A substrate having infrared reflective performance coated with a thin film made of a superconductor. The superconducting energy gap of the superconductor thin film according to the present invention is 0.02 eV.
It is necessary that it is above.
超電導エネルギギャップが０．０２ｅＶである超電導体
の薄膜は、その超電導状態においては、１００μ階より
長い波長の入射光をほぼ１００％反射する。A thin film of a superconductor with a superconducting energy gap of 0.02 eV, in its superconducting state, reflects almost 100% of incident light having a wavelength longer than 100 microns.
そして、波長が１００μｍから１μ−に減少するについ
て、反射率は漸次減少するが、ｌ〜１００μ−の広い波
長域で高い反射率を呈する。超電導のエネルギギャップ
が０．０２ｅＶより小さいと、１〜２．５μｍの近赤外
域はもちろん２．５μ一以上の長波長の赤外線に対して
も反射性能が低下するので好ましくない、また超電導体
の薄膜のエネルギギャップが大きい程、反射率がほぼ１
となる光の波長は短波長側にシフトし、赤外域の広い波
長範囲にわたって高い反射性能が得られる。しかし、超
電導エネルギギャップが１．６ｅＶより大きくなると、
０．７μ−以下の可視域の光に、対しても反射率が大き
くなり、その結果可視域の光の透過率が低下し、窓材と
して暗くなる。したがって、可視光線を通し窓材として
明るくするためには超電導体の薄膜の超電導エネルギギ
ャップは１．６ ｅＶより小さいことが必要である。The reflectance gradually decreases as the wavelength decreases from 100 μm to 1 μ−, but exhibits a high reflectance over a wide wavelength range of 1 to 100 μ−. If the energy gap of the superconductor is smaller than 0.02 eV, the reflection performance will deteriorate not only in the near-infrared region of 1 to 2.5 μm but also in the long wavelength infrared rays of 2.5 μm or more, which is undesirable. The larger the energy gap of the thin film, the more the reflectance is approximately 1.
The wavelength of the light is shifted to the shorter wavelength side, and high reflection performance can be obtained over a wide wavelength range in the infrared region. However, when the superconducting energy gap becomes larger than 1.6 eV,
The reflectance also increases for light in the visible range of 0.7μ or less, resulting in a decrease in the transmittance of light in the visible range, resulting in a dark window material. Therefore, in order to make the window material bright through visible light, the superconducting energy gap of the superconductor thin film must be smaller than 1.6 eV.
本発明にかかる好ましい超電導体の薄膜としては、一般
式が（Ａｔ−ｘＢｘ）ｔｃｕ＊ｏｎ−ｙ （Ａはラン
タン系列元素、Ｂは化学周期律表１ａ、ｎａまたはｍａ
族元素、Ｑ＜Ｘ＜１．０＜Ｙ＜４）で表わされるＬＮｔ
Ｆａ型結晶構造の酸化物の薄膜、あるいは一般式ＬｎＢ
ａｌＣｕａＯｘ （Ｌｎはランタン系列元素、ｘａ６
．５）で表わされる酸素欠損型ペロプスカイト型結晶構
造の酸化物の薄膜、あるいは化学式
８式％）
）
）
れる層状の結晶構造の酸化物の薄膜が用いられる。A preferable superconductor thin film according to the present invention has the general formula (At-xBx)tcu*on-y (A is a lanthanum series element, B is an element of the chemical periodic table 1a, na or ma).
Group element, LNt represented by Q<X<1.0<Y<4)
Thin film of oxide with Fa type crystal structure or general formula LnB
alCuaOx (Ln is a lanthanum series element, xa6
．． A thin film of an oxide having an oxygen-deficient perovskite crystal structure represented by 5) or a thin film of an oxide having a layered crystal structure represented by the chemical formula 8) is used.
また、上記した酸化物超電導体の薄膜の被覆方法として
は、スパッタリング法、真空蒸着法、イオンブレーティ
ング法などの物理的な被覆方法を用いることができる。Further, as a method for coating the thin film of the oxide superconductor described above, a physical coating method such as a sputtering method, a vacuum evaporation method, an ion blating method, etc. can be used.
さらに、本発明にかかる透明な基板としては、可視域で
透明な基板であれば、とくに限定されない０通常、石英
ガラス板やＭｇＯ，＾ｌ ｇｏｓの如き単結晶基板の如
き耐熱性の基板が超電導膜の被覆に際して受ける熱的条
件から好んで用いられる。Further, the transparent substrate according to the present invention is not particularly limited as long as it is transparent in the visible range.Usually, a heat-resistant substrate such as a quartz glass plate or a single crystal substrate such as MgO or Gos is used as a superconducting substrate. It is preferably used because of the thermal conditions it is subjected to when coating the membrane.
超電導状態における超電導体の薄膜の超電導エネルギギ
ャップと光の反射率との関係については、超電導体表面
に入射する光子のエネルギが超電導体の薄膜の超電導エ
ネルギギャップより小さいと、超電導体の薄膜の表面に
おいて入射光は弾性散乱し、はぼ反射率が１となる。逆
に入射光のエネルギが超電導体薄膜のエネルギギャップ
より大きいと、入射光は完全な弾性散乱を示さなくなり
、超電導体中の薄膜中にその一部が吸収され、薄膜が薄
いと透過する。Regarding the relationship between the superconducting energy gap of a superconductor thin film and the light reflectance in the superconducting state, if the energy of photons incident on the superconductor surface is smaller than the superconducting energy gap of the superconductor thin film, the superconductor thin film surface The incident light is elastically scattered, and the reflectance becomes 1. Conversely, if the energy of the incident light is greater than the energy gap of the superconductor thin film, the incident light will no longer exhibit complete elastic scattering, and a portion of it will be absorbed by the thin film in the superconductor, and if the thin film is thin, it will be transmitted.
さらに、超電導体の超電導エネルギギャップは、その超
電導体の超電導を示す臨界温度の値に比例し、０．０２
ｅＶの超電導エネルギギャップを有する超電導体は、は
ぼ８０にの臨界温度をもつ。Furthermore, the superconducting energy gap of a superconductor is proportional to the value of the critical temperature indicating superconductivity of the superconductor, and is 0.02
A superconductor with a superconducting energy gap of eV has a critical temperature of approximately 80°C.
本発明にかかる超電導体の薄膜は、入射光が薄膜表面で
弾性散乱し、反射率がほぼ１になる光の波長は、１００
μ−より短かく、かつ、１μ麹より長いため、赤外域の
広い範囲にわたって高い反射率を示し、かつ、可視域で
光を透過する。In the superconductor thin film according to the present invention, incident light is elastically scattered on the thin film surface, and the wavelength of the light at which the reflectance is approximately 1 is 100
Because it is shorter than μ- and longer than 1μ koji, it exhibits high reflectance over a wide range of infrared regions and transmits light in the visible region.
実施例
以下に実施例に基いて説明する。第１図は本発明の赤外
線反射性能を有する基板の部分断面図で、１は超電導体
か°らなる薄膜、２は可視域で透明な基板である。第２
図、第３図、第４図、第５図は実施例において得られた
サンプルの反射率、透過率を示す図である。EXAMPLES The following is an explanation based on examples. FIG. 1 is a partial cross-sectional view of a substrate having infrared reflective performance according to the present invention, where 1 is a thin film made of a superconductor, and 2 is a substrate transparent in the visible range. Second
3, 4, and 5 are diagrams showing the reflectance and transmittance of samples obtained in Examples.
実施例１
ＹオＯｓ＋ Ｂａｄ、 ＣｕＯの微粉末を所定形状に加
圧成形し、大気中で焼成してスパッタリング法による被
膜形成用のターゲットとした。このターゲットを通常用
いられるスパッタリング装置のカソードに取りつけた。Example 1 Fine powder of YOOs+Bad and CuO was press-molded into a predetermined shape and fired in the atmosphere to provide a target for forming a film by sputtering. This target was attached to the cathode of a commonly used sputtering device.
ターゲットに対向する位置に石英ガラス板を取りつけ、
約６００℃に加熱した。スパッタリング装置の真空槽内
の圧力を８ Ｘ １０”’Ｐａに排気ポンプにより減圧
した。アルゴンガスをガスバルブから真空槽内に導入し
て、０．４０Ｐａに制御し、高周波電源からターゲット
に１００Ｗの電力を投入し、約Ｉμｍの厚みの酸化物か
らなる膜を被覆した。石英ガラス板の加熱、導入ガスお
よび電力の供給を停止、真空槽を大気圧に戻してサンプ
ルを取り出した。その後、このサンプルを大気中で８０
０℃で３時間加熱処理をした。このサンプルを蛍光ｘ′
ｆｌＩＡ分析法で調べたところ膜の組成はＹＢａｔＣｕ
３０ｂ、 ９で示される組成であった。またこのサンプ
ルの導電率を測定したところ、臨界温度が８０に以下で
超電導性があることが認められた。Attach a quartz glass plate to a position facing the target,
It was heated to about 600°C. The pressure in the vacuum chamber of the sputtering apparatus was reduced to 8 x 10''Pa by an exhaust pump.Argon gas was introduced into the vacuum chamber from the gas valve and controlled at 0.40Pa, and 100W of power was applied to the target from a high frequency power source. The sample was taken out after heating the quartz glass plate, stopping the supply of introduced gas and electricity, returning the vacuum chamber to atmospheric pressure, and taking out the sample. 80 in the atmosphere
Heat treatment was performed at 0°C for 3 hours. Fluorescence x′ of this sample
According to flIA analysis, the composition of the film was YBatCu.
The composition was as shown in 30b, 9. When the electrical conductivity of this sample was measured, it was found that it had superconductivity at a critical temperature of 80°C or less.
液体窒素温度における反射率、透過率を測定したところ
第２図を得た。第２図中１および２はそれぞれ反射率、
透過率曲線である。波長が約６０μＮで反射率はほぼ１
を示し、かつ、１μ−以上の波長で反射性能を有してい
た。Figure 2 was obtained by measuring the reflectance and transmittance at liquid nitrogen temperature. In Figure 2, 1 and 2 are reflectances, respectively.
This is a transmittance curve. The wavelength is approximately 60 μN and the reflectance is approximately 1.
, and had reflection performance at wavelengths of 1 μm or more.
実施例２
ｓｔ、ｏ、、 ＳｒＯ，（：ａＯ，ＣＬＩＱの微粉末を
所定形状に加圧成形し、大気中で焼成して、スパッタリ
ング法による被膜形成用のターゲットとした。このター
ゲットを実施例１と同じスパッタリング装置のカソード
に取りつけた。ターゲットに対向する位置にＭｇＯ単結
晶基板を取りつけ、約６００℃に加熱した。スパッタリ
ング装置の真空槽内を５ｘｉｏ−’Ｐａの圧力まで減圧
後、アルゴンガスをガスバルブから真空槽内に導入して
０．４０Ｐａに制御し、高周波電源からターゲットに１
００Ｗの電力を投入し、約１．ｃｒｍの厚みの酸化物か
らなる膜をＭｇＯ単結晶の（１００）面上に被覆した。Example 2 A fine powder of st, o, SrO, (:aO, CLIQ) was pressure-molded into a predetermined shape and fired in the atmosphere to make a target for film formation by sputtering method. This target was used as a target for film formation by sputtering method. It was attached to the cathode of the same sputtering equipment as in 1.A MgO single crystal substrate was attached to a position facing the target and heated to about 600°C.After reducing the pressure inside the vacuum chamber of the sputtering equipment to a pressure of 5xio-'Pa, argon gas was added. is introduced into the vacuum chamber through the gas valve and controlled at 0.40 Pa, and the high frequency power supply is applied to the target.
00W of power, about 1. A film made of oxide with a thickness of crm was coated on the (100) plane of an MgO single crystal.
基板の加熱、導入ガスおよび電力の供給を停止し、真空
槽を大気圧に戻しサンプルを得た。その後このサンプル
を大気中８００℃で３時間熱処理をおこなった。このサ
ンプルの酸化物からなる被膜を実施例１と同様に調べた
ところ、膜の組成はＢ１１５ｒｌＣａｌＣｕｓＯ＋＋で
示される組成であった。また、このサンプルの導電率を
測定して、塵界温度が８０にの超電導性があることが認
められた。さらに液体窒素温度における反射率、透過率
を測定したものを第３図に示す。第３図中３，４はそれ
ぞれ反射率、透過率曲線である。波長が約６５μ−で反
射率はほぼ１であった。また１μ勧以上の波長で反射性
能を有していた。The heating of the substrate and the supply of introduced gas and electricity were stopped, and the vacuum chamber was returned to atmospheric pressure to obtain a sample. Thereafter, this sample was heat treated at 800° C. for 3 hours in the air. When the oxide film of this sample was examined in the same manner as in Example 1, the composition of the film was found to be B115rlCalCusO++. Furthermore, the conductivity of this sample was measured, and it was found that it had superconductivity at a dust boundary temperature of 80°C. Furthermore, the reflectance and transmittance measured at liquid nitrogen temperature are shown in FIG. 3 and 4 in FIG. 3 are reflectance and transmittance curves, respectively. The wavelength was approximately 65 μ- and the reflectance was approximately 1. It also had reflective performance at wavelengths of 1 μm or more.
実施例３
Ｔ １ ｚｏ、＋ ＳｒＯ，Ｃａｂ、 ＣｕＯの微粉末
を所定形状に加圧成形し、大気中で焼成して、スパッタ
リング法による被膜形成用のターゲットとした。このタ
ーゲットを実施例１と同じスパッタリング装置のカソー
ドに取りつけた。ターゲットに対向する位置にＭｇＯ単
結晶の板を取りつけ、約３００℃に加熱した。スパッタ
リング装置の真空槽内の圧力を８ Ｘｌ０−’Ｐａまで
ポンプにより減圧し、その後アルゴンガスをガスバルブ
から真空槽内に導入して０．４０Ｐａに制御し、高周波
電源からターゲットにＩＱＱＷの電力を投入して、約１
μ−の厚みの酸化物からなる膜をＭｇＯ単結晶の（１０
０）面上に被覆した。基板の加熱、ガスの導入、電力の
供給を停止し、真空槽を大気圧に戻し、サンプルを得た
。その後このサンプルをＴｌ蒸気の雰囲気中で８００℃
に３時間加熱処理した。このサンプルの被膜を蛍光Ｘ線
分析法で調べたところ、膜の組成は、Ｔ ＩＩ ＠５ｒ
ｚＣｕｓＯ０で示される組成であった。またこのサンプ
ルの導電率を測定して、８０に以下で超電導性が確認さ
れた。さらにＩＯＫにおける反射率、透過率を測定して
第４図を得た。第４図中５．６はそれぞれ反射率、透過
率曲線である。Example 3 Fine powders of T 1 zo, + SrO, Cab, and CuO were press-molded into a predetermined shape and fired in the atmosphere to provide a target for forming a film by sputtering. This target was attached to the cathode of the same sputtering apparatus as in Example 1. A MgO single crystal plate was attached to a position facing the target and heated to about 300°C. The pressure in the vacuum chamber of the sputtering device was reduced to 8 Xl0-'Pa by a pump, then argon gas was introduced into the vacuum chamber from the gas valve to control it to 0.40Pa, and IQQW power was applied to the target from the high-frequency power source. Then, about 1
A film made of oxide with a thickness of μ- is coated with a MgO single crystal (10
0) Coated on the surface. The heating of the substrate, the introduction of gas, and the supply of electricity were stopped, and the vacuum chamber was returned to atmospheric pressure to obtain a sample. This sample was then heated to 800°C in an atmosphere of Tl vapor.
The mixture was heat-treated for 3 hours. When the film of this sample was examined by fluorescent X-ray analysis, the composition of the film was found to be T II @5r.
It had a composition indicated by zCusO0. The conductivity of this sample was also measured, and superconductivity was confirmed at 80 or less. Furthermore, the reflectance and transmittance at IOK were measured and FIG. 4 was obtained. 5.6 in FIG. 4 are reflectance and transmittance curves, respectively.
波長７０μｍ以上で反射率がほぼ１であることが認めら
れた。また１μｍ以上の波長で高い反射性能を示してい
ることが分る。It was observed that the reflectance was approximately 1 at wavelengths of 70 μm or more. It can also be seen that it exhibits high reflection performance at wavelengths of 1 μm or more.
実施例４
Ｔ ｌ ｚ（ｈ＋ Ｂａｄ、 Ｃａｂ、 ＣｕＯの＊粉
末を所定形状に加圧成形し、タリウム蒸気雰囲気中で８
８５℃、２時間焼成して、スパッタリング法による被膜
形成用のターゲットとした。このターゲットを実施例１
と同じスパッタリング装置のカソードに取りつけた。タ
ーゲットに対向する装置に？ＩｇＯ単結晶の仮を取りつ
け、約３００℃に加熱した。スパツタリング装置の真空
槽内の圧力を８ Ｘ １０−’Ｐａまでポンプにより減
圧し、その後アルゴンガスをガスバルブから真空槽内に
導入して０．４０Ｐａに制御し、高周波電源からターゲ
ットに７０Ｗの電力を投入して、約１μ園の厚みの酸化
物からなる膜をＹＳｚ基ｌｌ１（部分安定化ジルコニア
基板）上に被膜した。Example 4 T l z (h+ *Powder of Bad, Cab, CuO was pressure-molded into a predetermined shape, and heated in a thallium vapor atmosphere.
It was fired at 85° C. for 2 hours and used as a target for film formation by sputtering. Example 1
It was attached to the cathode of the same sputtering equipment. To the device facing the target? A temporary IgO single crystal was attached and heated to about 300°C. The pressure in the vacuum chamber of the sputtering device was reduced to 8 × 10-'Pa by a pump, and then argon gas was introduced into the vacuum chamber from the gas valve to control it to 0.40Pa, and 70W of power was applied to the target from a high-frequency power source. A film made of an oxide having a thickness of about 1 μm was coated on the YSz-based 111 (partially stabilized zirconia substrate).
基板の加熱、ガスの導入、電力の供給を停止し、真空槽
を大気圧に戻し、サンプルを得た。その後このサンプル
を大気中で８８０℃に３時間加熱処理し、た、このサン
プルの被膜を蛍光Ｘ線分析法で調べたところ、膜の組成
はＴ ｌ ＝ＢａＣａｔＣｕｓＯｔｏで示される＆１ｌ
ｔｃであった。またこのサンプルの導電率を測定して、
８０に以下で超電導性が確認された。The heating of the substrate, the introduction of gas, and the supply of electricity were stopped, and the vacuum chamber was returned to atmospheric pressure to obtain a sample. After that, this sample was heat-treated at 880°C for 3 hours in the air, and the film of this sample was examined by fluorescent X-ray analysis, and the composition of the film was shown as T l =BaCatCusOto&1l
It was tc. We also measured the conductivity of this sample,
Superconductivity was confirmed below 80%.
さらに液体窒素温度における反射率、透過率を測定して
第５図を得た。第５図中７．８はそれぞれ反射率、透過
率曲線である。波長７０μ諺以上で反射率がほぼ１であ
ることが認められた。また！μ−以上の波長で高い反射
性能を示していることが分る。Furthermore, the reflectance and transmittance at liquid nitrogen temperature were measured and FIG. 5 was obtained. 7.8 in FIG. 5 are reflectance and transmittance curves, respectively. It was observed that the reflectance was approximately 1 at wavelengths of 70 μm or more. Also! It can be seen that it exhibits high reflection performance at wavelengths of μ− or more.
本発明にかかる赤外線反射性能を有する基板は、１μ〜
１００μ難の広い波長範囲にわたり高い反射率を有して
いるので、太陽光のエネルギを遮へいする窓材として、
また比較的低温の物体から放射される輻射エネルギを遮
へいする窓材とすることができる。The substrate having infrared reflective performance according to the present invention has a
It has a high reflectance over a wide wavelength range of about 100 μm, so it can be used as a window material to shield sunlight energy.
Further, it can be used as a window material that shields radiant energy emitted from relatively low-temperature objects.
第１図は本発明にかかる赤外線反射性能を有する基板の
部分断面図で、第２図、第３図、第４図、第５図は本発
明の実施例の反射および透過特性を示す図である。
１・・・超電導体からなる薄膜、２・・・透明基板１１
図
第
図
第３因
第
図FIG. 1 is a partial cross-sectional view of a substrate having infrared reflective performance according to the present invention, and FIGS. 2, 3, 4, and 5 are diagrams showing reflection and transmission characteristics of embodiments of the present invention. be. 1... Thin film made of superconductor, 2... Transparent substrate 11 Figure Figure 3 Factor Figure
Claims (1)
〜１．６ｅＶの超電導体の薄膜が被覆された赤外線反射
性能を有する基板 ２）前記超電導体の薄膜が一般式 （Ａ＿１＿−＿ＸＢ＿Ｘ）＿ＺＣｕ＿ＺＯ＿４＿−＿Ｙ
（Ａはランタン系列元素、Ｂは化学周期律表 I ａ、II
ａまたはIIIａ族元素、０＜Ｘ＜１、０＜Ｙ＜４）で表
わされるＫ＿２ＮｉＦ＿４型結晶構造の酸化物の薄膜あ
るいは、一般式 ＬｎＢａ＿ＺＣｕ＿３Ｏ＿Ｘ（Ｌｎはランタン系列元素
、Ｘ≧６．５）で表わされる酸素欠損型ペロブスカイト
型結晶構造の酸化物の薄膜、あるいは化学式 Ｂｉ＿２Ｓｒ＿２Ｃａ＿２＿−＿１Ｃｕ＿ＸＯ＿２＿Ｘ
＿＋＿４（１≦Ｘ≦４）、Ｔｌ＿２、Ｂａ＿２Ｃａ＿Ｘ
＿−＿１Ｃｕ＿ＸＯ＿２＿Ｘ＿＋＿４（１≦Ｘ≦４）、
またはＴｌ＿２、Ｓｒ＿２Ｃａ＿Ｘ＿−＿１Ｃｕ＿ＸＯ
＿２＿Ｘ＿＋＿４（１≦Ｘ≦４）で表わされる層状の結
晶構造の酸化物の薄膜である特許請求範囲第１項記載の
赤外線反射性能を有する基板[Claims] 1) Superconducting energy gap of 0.02 on a transparent substrate
Substrate having infrared reflective performance coated with a thin film of ~1.6 eV superconductor 2) The thin film of superconductor has the general formula (A_1_-_XB_X)_ZCu_ZO_4_-_Y
(A is a lanthanum series element, B is a chemical periodic table I a, II
a or IIIa group element, 0<X<1, 0<Y<4), or a thin film of oxide of K_2NiF_4 type crystal structure represented by the general formula LnBa_ZCu_3O_X (Ln is a lanthanum series element, X≧6.5). A thin film of an oxide with an oxygen-deficient perovskite crystal structure, or with the chemical formula Bi_2Sr_2Ca_2_-_1Cu_XO_2_X
＿＋＿４(1≦X≦4), Tl_2, Ba_2Ca_X
____1Cu_XO_2_X_+_4 (1≦X≦4),
or Tl_2, Sr_2Ca_X_-_1Cu_XO
_2_X_+_4 (1≦X≦4) A substrate having infrared reflective performance according to claim 1, which is a thin film of an oxide with a layered crystal structure represented by _2_X_+_4 (1≦X≦4)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-172551 | 1989-07-04 | ||
| JP17255189 | 1989-07-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03129783A true JPH03129783A (en) | 1991-06-03 |
Family
ID=15943964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1246875A Pending JPH03129783A (en) | 1989-07-04 | 1989-09-22 | Substrate having infrared ray reflective property |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03129783A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7431984B2 (en) * | 2004-10-01 | 2008-10-07 | Murata Manufacturing Co., Ltd. | Hybrid lens using translucent ceramic |
| CN108414444A (en) * | 2018-03-09 | 2018-08-17 | 山东大学 | A kind of non-contact type superconducting thin-film material superconduction phase transformation and Photoinduced Electron local effect test device and its working method |
-
1989
- 1989-09-22 JP JP1246875A patent/JPH03129783A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7431984B2 (en) * | 2004-10-01 | 2008-10-07 | Murata Manufacturing Co., Ltd. | Hybrid lens using translucent ceramic |
| CN108414444A (en) * | 2018-03-09 | 2018-08-17 | 山东大学 | A kind of non-contact type superconducting thin-film material superconduction phase transformation and Photoinduced Electron local effect test device and its working method |
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