JPH03127321A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH03127321A JPH03127321A JP26703889A JP26703889A JPH03127321A JP H03127321 A JPH03127321 A JP H03127321A JP 26703889 A JP26703889 A JP 26703889A JP 26703889 A JP26703889 A JP 26703889A JP H03127321 A JPH03127321 A JP H03127321A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- layer
- magnetic
- ion beam
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims abstract description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 22
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 abstract description 9
- 238000007740 vapor deposition Methods 0.000 abstract description 7
- 229910000531 Co alloy Inorganic materials 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- MGQQZGJIMOVHRZ-UHFFFAOYSA-N [Si].O=O Chemical compound [Si].O=O MGQQZGJIMOVHRZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ディスク状のガラスを基板に用いた磁気記
録担体に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic recording carrier using a disk-shaped glass substrate.
固定磁気ディスク装置に組み込まれた磁気記録担体は高
速回転と停止の動作を繰り返しこれと同時に磁気記録担
体の表面に近接保持された磁気ヘッドが接触、浮上を繰
り返して磁気的手段により情報の記録再生が行なわれる
。この磁気記ｔｉ１ｉ１体の動作はいわゆるコンタクト
スタートストップと言われるものであり、これに対する
機械的耐久性は磁気記録担体にとって重要な特性となっ
ている。A magnetic recording carrier built into a fixed magnetic disk device repeats high-speed rotation and stopping operations, and at the same time, a magnetic head held close to the surface of the magnetic recording carrier repeatedly contacts and floats to record and reproduce information by magnetic means. will be carried out. This operation of the magnetic recording carrier is called a contact start/stop, and mechanical durability against this is an important characteristic for a magnetic recording carrier.
磁気的手段による記録再生の観点からは磁気記録担体の
表面は出来るだけ平滑であることが望ましいが、コンタ
クトスタートストップに対する機械的耐久性から云えば
過度に平滑になると磁気記録担体と磁気ヘッドが吸着し
て摩擦が大きくなりクラッシュを引き起す原因となる。From the viewpoint of recording and reproducing by magnetic means, it is desirable that the surface of the magnetic recording carrier be as smooth as possible, but from the viewpoint of mechanical durability against contact start/stop, if it is too smooth, the magnetic recording carrier and the magnetic head may attract each other. This increases friction and causes a crash.
従って、これを防止するために例えば、機械加工により
基板の表面に凹凸を形成したり、蒸着により基板の表面
に凹凸を形成することが考えられている。（特開昭６３
−２３１７２４号公報参照）、第２図は前者の例を示す
部分断面図であり、第３図は後者の例を示す部分断面図
である０図において、（６）は機械加工によりディスク
状のガラスの表面に凹凸を形成した基板、（３）は磁気
特性を向上させるためのクロムの下地層、（４）はコバ
ルト合金からなる磁性層、（７）はカーボンからなる保
Ｘ！層、（１１は鏡面研磨仕上げされたガラスの基板、
（８）は蒸着により形成した島状の酸化アルよニウム層
である。Therefore, in order to prevent this, it has been considered, for example, to form irregularities on the surface of the substrate by machining or by vapor deposition. (Unexamined Japanese Patent Publication No. 63
-231724), Figure 2 is a partial sectional view showing the former example, and Figure 3 is a partial sectional view showing the latter example. A substrate with unevenness formed on the surface of glass, (3) a chromium underlayer to improve magnetic properties, (4) a magnetic layer made of a cobalt alloy, and (7) a magnetic layer made of carbon! layer, (11 is a mirror-polished glass substrate,
(8) is an island-shaped aluminum oxide layer formed by vapor deposition.
従来の磁気記録担体は以上のように構成されており、基
板（６）に使用したガラスが脆性材料で容易に剥離微細
粉を生じ、機械加工を行なう際に加工溝に残留する極微
細粉や加工表面に部分的に生じる微小突起の影響により
また鏡面研磨仕上げしたガラスの基ｖｉ、（１）からの
酸化アルミニウムＮ（８）の剥離によりコンタクトスタ
ートストップに対する機械的耐久性が低下すると云う解
決すべき課題があった。Conventional magnetic recording carriers are constructed as described above, and the glass used for the substrate (6) is a brittle material that easily peels off and generates fine powder. The mechanical durability against contact start-stop is reduced due to the influence of minute protrusions partially formed on the machined surface and due to the peeling of aluminum oxide N (8) from the mirror-polished glass substrate (1). There were issues to be addressed.
この発明は上記のような課題を解決する為になされたも
ので、コンタクトスタートストップに対するすぐれたｍ
ｖｉ的耐久性を有する磁気記録担体を得ることを目的と
する。This invention was made to solve the above-mentioned problems, and is an excellent m for contact start/stop.
The object of the present invention is to obtain a magnetic recording carrier having vi-level durability.
この発明に係る磁気記録担体はガラスからなるディスク
状の基板の表面にクラスタイオンビーム法により無数の
島状の二酸化ケイ素層を蒸着形成し、その上に記録媒体
の磁性層と保護層を順次被着形成したものである。In the magnetic recording carrier according to the present invention, countless island-shaped silicon dioxide layers are deposited on the surface of a disk-shaped substrate made of glass by a cluster ion beam method, and a magnetic layer and a protective layer of a recording medium are sequentially coated thereon. It has been formed by adhering to it.
この発明においては無数の島状の二酸化ケイ素層が基板
の表面に形成されるから、二酸化ケイ素層とその上に被
着形成した磁性層、保護層が−１１ｉ！ｉｉ！すること
はない。In this invention, innumerable island-shaped silicon dioxide layers are formed on the surface of the substrate, so that the silicon dioxide layer, the magnetic layer and the protective layer deposited thereon are -11i! ii! There's nothing to do.
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
第１図はその実施例を示す部分断面図である０図におい
て、１１ （３１１４１は上記従来の磁気記録担体にお
けるものと同じものである。In FIG. 1, which is a partial sectional view showing this embodiment, 11 (31141) is the same as in the conventional magnetic recording carrier.
クラスタイオンビーム装置による二酸化ケイ素層（２）
の蒸着はイオンの入射エネルギを変えることにより核形
成速度と島状の二酸化ケイ素層（２）の成長速度をコン
トロールすることが出来る。イオンの加速電圧を低くし
て蒸着すると、凹凸の大きい島状の二酸化ケイ素層（２
）が得られるがイオンの加速電圧を高くすると層状に戒
長し凹凸が小さくなるので、イオンの加ｉ！！電圧は２
ｋＶ以下が望ましい、二酸化ケイ素（Ｓｉｎｇ）はガラ
スの主成分であるので基板ｆｉｌに島状の二酸化ケイ素
Ｎ（２）を蒸着形成すると相互拡散により強い密着力を
持ち一体化して剥離することはない、まず、坩堝に酸化
ケイ素（Ｓｉｎ）を装填したクラスタイオンビーム源と
酸素（０２）ガスイオンビーム源を内蔵したクラスタイ
オンビーム装置に２．５インチ径のソーダガラスからな
る基板＋１１を装着し、酸素（０りガスイオンのみを基
板＋１１に照射して表面の付着物を除去した。これを２
００℃まで加熱し、イオンの加速電圧０．５ｋＶで酸化
ケイ素（Ｓｉｎ）のクラスタイオンビームと酸素（０８
）ガスイオンビームを同時に照射し平均厚み約！５０人
の島状の二酸化ケイ素層（２）を形成した。その後、こ
れをスパッタリング装置に移し磁気特性を制御ｎするク
ロムの下地層（３）とコバルト合金の磁性Ｎ（４）を順
次、被着形成した。それぞれの膜厚を１０００人と４０
０人にしたこれを再度、クラスタイオンビーム装置に移
し、イオンの加速電圧３ｋＶで膜厚４００人の二酸化ケ
イ素（Ｓｉｎｇ）の保！ｌ！ Ｎ（５）を形成した。こ
のようにして製作した磁気記録担体にフロロカーボンか
らなる潤滑剤を塗布し、固定磁気ディスク装置に組み込
んで３０，０００回のコンタクトスタートストップテス
トを行ったが、磁気記録担体の表面に傷は見られず、良
好な結果を得ることが出来た。Silicon dioxide layer (2) by cluster ion beam device
In the vapor deposition, the nucleation rate and the growth rate of the island-shaped silicon dioxide layer (2) can be controlled by changing the incident energy of ions. When the ion acceleration voltage is lowered and the evaporation is performed, an island-like silicon dioxide layer with large irregularities (2
) is obtained, but when the acceleration voltage of the ions is increased, the ions are lengthened in a layered manner and the unevenness becomes smaller, so that the ion addition i! ! The voltage is 2
kV or less is desirable. Silicon dioxide (Sing) is the main component of glass, so if island-shaped silicon dioxide N (2) is formed by vapor deposition on the substrate fil, it will have strong adhesion due to mutual diffusion and will not peel off. First, a substrate +11 made of soda glass with a diameter of 2.5 inches was attached to a cluster ion beam device that included a cluster ion beam source in which a crucible was loaded with silicon oxide (Sin) and an oxygen (02) gas ion beam source. Substrate +11 was irradiated with only oxygen (0 gas ions) to remove deposits on the surface.
Heating to 00°C, a cluster ion beam of silicon oxide (Sin) and oxygen (08
) Simultaneous irradiation with gas ion beams to achieve an average thickness of approximately! A silicon dioxide layer (2) in the form of 50 islands was formed. Thereafter, this was transferred to a sputtering device, and a chromium underlayer (3) for controlling magnetic properties and a magnetic N (4) made of a cobalt alloy were successively deposited. Each film thickness is 1000 and 40
This was transferred to the cluster ion beam device again, and a film of silicon dioxide (Sing) with a thickness of 400 ions was maintained at an ion acceleration voltage of 3 kV. l! N(5) was formed. The thus produced magnetic recording carrier was coated with a fluorocarbon lubricant, installed in a fixed magnetic disk drive, and subjected to 30,000 contact start/stop tests, but no scratches were observed on the surface of the magnetic recording carrier. We were able to obtain good results.
なお、上記実施例では二つのイオンビーム源をもつクラ
スクイオンビーム装置により二酸化ケイ素層（２）を蒸
着形成したが酸素（０１）ガス雰囲気による反応性クラ
スタイオンビーム装置を用いても同じように蒸着形成す
ることができる。また、磁性層（４）はＣｏ−Ｎｉ合金
、Ｃｏ−Ｎｉ−Ｃｒ合金、Ｃｏ−ＰＬ金合金どの金属薄
膜型記録媒体であれば、すべて適用可能であり、保護層
（５）は二酸化ケイ素（Ｓｉｎｇ）に限るものではない
。In the above embodiment, the silicon dioxide layer (2) was formed by vapor deposition using a cluster ion beam device having two ion beam sources, but the silicon dioxide layer (2) could also be deposited in the same way using a reactive cluster ion beam device using an oxygen (01) gas atmosphere. It can be formed by vapor deposition. Further, the magnetic layer (4) can be applied to any metal thin film type recording medium such as Co-Ni alloy, Co-Ni-Cr alloy, Co-PL gold alloy, etc., and the protective layer (5) is made of silicon dioxide ( Sing).
さらに、上記実施例では基板（１）の表面に無数の島状
の二酸化ケイ素（２）を蒸着形成し、その上に磁気特性
を向上させるためのクロムの下地層（３）を被着形成し
たが、下地層（３）は省略してもよい。Furthermore, in the above example, countless islands of silicon dioxide (2) were deposited on the surface of the substrate (1), and a chromium underlayer (3) was deposited thereon to improve magnetic properties. However, the base layer (3) may be omitted.
〔発明の効果）
以上のように、この発明によればガラスからなるディス
ク状の基板の表面にクラスタイオンビーム法により無数
の島状の二酸化ケイ素層を蒸着形成し、その上に記録媒
体の磁性層と保護層を順次被着形成したので磁性層と保
護層が＃Ｉ鰭することはなく、コンタクト・スタート・
ストツプに対するすぐれた機械的耐久性が得られると云
う効果がある。[Effects of the Invention] As described above, according to the present invention, countless island-shaped silicon dioxide layers are deposited on the surface of a disk-shaped substrate made of glass by the cluster ion beam method, and the magnetic layer of the recording medium is deposited thereon. Since the layer and the protective layer are deposited sequentially, the magnetic layer and the protective layer do not form #I fins, and contact, start, and
This has the effect of providing excellent mechanical durability against stops.
第１図はこの発明の一実施例を示す部分断面図、第２図
と第３図はそれぞれの従来の異なる磁気記録担体を示す
部分断面図である。
図において、（１１は基板、（２）は二酸化ケイ素層、
＋３１は下地層、（４）は磁性層、＋５１は保護層であ
る。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a partial sectional view showing one embodiment of the present invention, and FIGS. 2 and 3 are partial sectional views showing different conventional magnetic recording carriers. In the figure, (11 is a substrate, (2) is a silicon dioxide layer,
+31 is an underlayer, (4) is a magnetic layer, and +51 is a protective layer. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
ンビーム法により無数の島状の二酸化ケイ素層を蒸着形
成し、その上に記録媒体の磁性層と保護層を順次被着形
成したことを特徴とする磁気記録担体。It is characterized in that countless island-shaped silicon dioxide layers are deposited on the surface of a disk-shaped substrate made of glass by cluster ion beam method, and a magnetic layer and a protective layer of a recording medium are sequentially deposited thereon. magnetic record carrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26703889A JPH03127321A (en) | 1989-10-12 | 1989-10-12 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26703889A JPH03127321A (en) | 1989-10-12 | 1989-10-12 | Magnetic recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03127321A true JPH03127321A (en) | 1991-05-30 |
Family
ID=17439184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26703889A Pending JPH03127321A (en) | 1989-10-12 | 1989-10-12 | Magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03127321A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6375790B1 (en) | 1999-07-19 | 2002-04-23 | Epion Corporation | Adaptive GCIB for smoothing surfaces |
-
1989
- 1989-10-12 JP JP26703889A patent/JPH03127321A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6375790B1 (en) | 1999-07-19 | 2002-04-23 | Epion Corporation | Adaptive GCIB for smoothing surfaces |
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