JPH03126222A - Deposited-film forming method - Google Patents
Deposited-film forming methodInfo
- Publication number
- JPH03126222A JPH03126222A JP26705989A JP26705989A JPH03126222A JP H03126222 A JPH03126222 A JP H03126222A JP 26705989 A JP26705989 A JP 26705989A JP 26705989 A JP26705989 A JP 26705989A JP H03126222 A JPH03126222 A JP H03126222A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- deposited film
- deposition
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 49
- 238000005530 etching Methods 0.000 claims abstract description 71
- 230000008021 deposition Effects 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 230000007423 decrease Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052736 halogen Inorganic materials 0.000 claims description 14
- 150000002367 halogens Chemical class 0.000 claims description 14
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 abstract description 63
- 238000000151 deposition Methods 0.000 abstract description 38
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 31
- 239000013078 crystal Substances 0.000 abstract description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 17
- 229910004014 SiF4 Inorganic materials 0.000 abstract description 14
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 11
- 239000001257 hydrogen Substances 0.000 abstract description 11
- 230000003247 decreasing effect Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 41
- 239000010409 thin film Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000003313 weakening effect Effects 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910007260 Si2F6 Inorganic materials 0.000 description 1
- 229910004016 SiF2 Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KBDJQNUZLNUGDS-UHFFFAOYSA-N dibromosilicon Chemical compound Br[Si]Br KBDJQNUZLNUGDS-UHFFFAOYSA-N 0.000 description 1
- MGNHOGAVECORPT-UHFFFAOYSA-N difluorosilicon Chemical compound F[Si]F MGNHOGAVECORPT-UHFFFAOYSA-N 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- -1 hydrogen halogen compounds Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 239000011269 tar Substances 0.000 description 1
- SDNBGJALFMSQER-UHFFFAOYSA-N trifluoro(trifluorosilyl)silane Chemical compound F[Si](F)(F)[Si](F)(F)F SDNBGJALFMSQER-UHFFFAOYSA-N 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の属する技術分野〕
本発明はシリコンを含む機能性堆積膜、殊に半導体デバ
イス、感光デバイス、画像人力用のラインセンサー、撮
像デバイスなどに用いる結晶性シリコンの堆積膜を形成
するのに好適な方法に関する。Detailed Description of the Invention (Technical Field to Which the Invention Pertains) The present invention relates to a functional deposited film containing silicon, particularly a deposited crystalline silicon film used for semiconductor devices, photosensitive devices, line sensors for image processing, imaging devices, etc. The present invention relates to a method suitable for forming a film.
例えば、多結晶シリコン膜の形成に主として常圧ＣＶＤ
法、ＬＰＣＶＤ法、プラズマＣＶＤ法などが用いられて
おり、−船釣にはＬＰＣＶＤ法が広く用いられ企業化さ
れている。しかしながら、例えばＬＰＣＶＤ法では基体
温度が高く安価なガラス基板などは用いることができず
、高融点の石英基板などが用いられているが、その高コ
ストのためより低温での薄膜形成が必要とされている。For example, atmospheric pressure CVD is mainly used to form polycrystalline silicon films.
For boat fishing, the LPCVD method is widely used and commercialized. However, for example, in the LPCVD method, the substrate temperature is high and inexpensive glass substrates cannot be used, and quartz substrates with high melting points are used, but due to their high cost, thin film formation is required at lower temperatures. ing.
また、結晶成長温度の低温化に関して、ＥＣＲプラズマ
、ＭＢＥ法、及びバイアススパッタ法など研究が宋んに
行われているが、より低温で良質な結晶を得るために、
ガスの供給設備、成膜装置のクリーン度の向上などが必
須の要素であり、高い運転コスト及び繁雑な管理を必要
としている。In addition, research on lowering the crystal growth temperature, such as ECR plasma, MBE method, and bias sputtering method, is being carried out, but in order to obtain high-quality crystals at lower temperatures,
Improving the cleanliness of gas supply equipment and film-forming equipment are essential elements, which require high operating costs and complicated management.
また、３次元集積回路の開発に向けて、ｓｏｒ技術のひ
とつにシリコン結晶の選択成長が研究されている。例え
は、Ｓ ｉ Ｈ２Ｃｆ１２ ＨＣｌ２系のＬＰＣＶＤ法
で、５ｉ０２上への核形成を防ぐために成長／エツチン
グのサイクル法が試みられている。これは、５ｉ０２上
に核が形成されるのに遅延時間が生じることに鑑み、こ
の遅延時間内に原料のＳｉＨ，ＣＪＺ２を導入して成長
し、次にＨＣｆｌに切換えて５ｉｎ２上の多結晶シリコ
ン核のみを除去して清浄化を行い、必要な膜厚がシリコ
ン基体上に堆積するまで繰り返す方法である。In addition, toward the development of three-dimensional integrated circuits, selective growth of silicon crystals is being researched as one of the SOR technologies. For example, in the S i H2Cf12 HCl2 based LPCVD method, a growth/etching cycle method has been attempted to prevent nucleation on 5i02. Considering that there is a delay time for the formation of nuclei on 5i02, the raw materials SiH and CJZ2 are introduced and grown within this delay time, and then the polycrystalline silicon on 5in2 is grown by switching to HCfl. In this method, only the nuclei are removed and cleaned, and the process is repeated until the required film thickness is deposited on the silicon substrate.
（Ｌ、Ｊａｓｔｒｚｅｂｓｋｉ、Ｊ、Ｆ、Ｃｏｒｂｏｙ
、Ｊ、Ｔ、ＭｃＧｉｎｎ ａｎｄ Ｒ。(L, Jastrzebski, J, F, Corboy
, J., T., McGinn and R.
Ｐａｇｌ ｔａｒｓ、Ｊ、Ｅｌｅｃｔｒｏｃｈｅｍ、Ｓ
ｏｃ、１３０ （１９８３）Ｐ、Ｐ、１５７１）しかし
ながら、成長／エツチングサイクルの時間配分や成長温
度は欠陥密度に影響を与え、主に双晶、転位欠陥、積層
欠陥、ボイドを多数発生し、実用化には至フていない。Pagl tars, J, Electrochem, S
oc, 130 (1983) P, P, 1571) However, the time distribution of the growth/etching cycle and the growth temperature affect the defect density, mainly causing a large number of twins, dislocation defects, stacking faults, and voids, making it impractical for practical use. It has not yet been fully realized.
以上の様な核密度の制御及び粒径拡大技術には、その工
程の複雑性、制御性、特殊性、容易性に多大の問題があ
る。またプロセス温度が高温となるため安価なガラス基
体などを用いることができないといった問題もあり、大
粒径かつ少粒界の多結晶シリコン膜を容易に大面積で形
成するには不適である。The techniques for controlling nuclear density and enlarging particle size as described above have many problems in the complexity, controllability, speciality, and ease of the process. Furthermore, since the process temperature is high, there is a problem that inexpensive glass substrates cannot be used, and this method is unsuitable for easily forming a polycrystalline silicon film with large grain size and few grain boundaries over a large area.
この様な問題点を解決するために、特開昭６２−２４１
３２６号公報に開示されているＨＲ−ＣＶＤ法（Ｈｙｄ
ｒｏｇｅｎ ＲａｄｉｃａｌＡｓｉｓｔｅｄ ＣＶ
Ｄ Ｍｅｔｈｏｄ）を用いた多結晶シリコン膜の形成
方法が提案されているが、堆積膜形成直後の膜の結晶粒
径はガラス基板上において８００人程度であり、プラズ
マＣＶＤ法に比較して改善されてはいるものの、粒径を
さらに拡大させるには膜形成中あるいは形成後に熱また
は光エネルギーを付与する必要がある（特開昭６２−２
４０７６６号公報、特開昭６２−２４０７６７号公報、
特開昭６２−２４３７６７号公報）。In order to solve these problems, Japanese Patent Application Laid-Open No. 62-241
HR-CVD method (Hyd
rogen Radical Assisted CV
A method for forming a polycrystalline silicon film using the D Method has been proposed, but the crystal grain size of the film immediately after formation is about 800 nm on a glass substrate, which is an improvement compared to the plasma CVD method. However, in order to further expand the particle size, it is necessary to apply heat or light energy during or after film formation (Japanese Patent Laid-Open No. 62-2
No. 40766, Japanese Patent Application Laid-open No. 62-240767,
JP-A-62-243767).
さらに、低温下でのガラス基板上での粒径拡大のために
、エツチング機能を有する活性なガス種を基板上に導入
し、特定の面方位の結晶成長を促す方法も考案されてい
る。（特開昭６２−８５５１５号公報）
これは、成膜工程中に同時にエツチング作用を堆積膜成
長表面に施すこと、あるいは、成膜を中断してエツチン
グ作用を堆積膜成長表面に施すことで、特定の面方位の
結晶成長を優先的に行わせることで結晶性の良好な堆積
膜の形成を可能としている。Furthermore, in order to increase the grain size on a glass substrate at low temperatures, a method has been devised in which an active gas species having an etching function is introduced onto the substrate to promote crystal growth in a specific plane orientation. (Japanese Unexamined Patent Publication No. 62-85515) This can be done by simultaneously applying an etching action to the surface of the deposited film during the film formation process, or by interrupting the film formation and applying an etching action to the surface of the deposited film. By preferentially growing crystals in a specific plane orientation, it is possible to form a deposited film with good crystallinity.
しかしながら、このエツチング作用による効果は高いも
のの以下の様な問題点が生じている。However, although the effect of this etching action is high, the following problems arise.
即ち、
ｌ、 エツチングガス導入に伴うガスインレットの増設
による装置の管理項目の増加。That is, l. Increased equipment management items due to the addition of gas inlets due to the introduction of etching gas.
２、エツチングガス設備の増設。2. Expansion of etching gas equipment.
３、エツチングガス導入のため気相反応が乱れ、このた
め、エツチング作用が不完全となり制御性が悪化する。3. The introduction of etching gas disturbs the gas phase reaction, resulting in incomplete etching and poor controllability.
などである。etc.
〔発明の目的〕
本発明は上述した各ＣＶＤ法の問題点を除去すると同時
に、結晶粒径の大きな結晶シリコン膜の形成方法を提供
するものである。また別の目的は、形成される膜の特性
、成膜速度、再現性の向上及び膜品質の均一化を図りな
がら、膜の大面積化を容易に達成することのできる結晶
性の堆積膜の形成方法を提供することにある。[Object of the Invention] The present invention eliminates the problems of the above-mentioned CVD methods and at the same time provides a method for forming a crystalline silicon film having a large crystal grain size. Another objective is to create a crystalline deposited film that can easily achieve a large area while improving the characteristics, film formation speed, and reproducibility of the film being formed and making the film quality uniform. The object of the present invention is to provide a forming method.
〔発明の構成）
本発明者らは、従来の化学気相法による堆積膜形成法に
おける諸問題を解決し、上述の目的を達成すべく鋭意研
究をつづけた結果完成せしめたものであり、その骨子と
するところは、ケイ素とハロゲンを含む化合物を分解す
ることにより生成される活性種（Ａ）と、該活性ｆ！（
Ａ）と化学的相互作用をする成膜用化学物質より生成さ
れる活性ｆｉＴＩ （Ｂ ）とを用いることにより堆積
膜を形成する方法において、エツチング作用を有するケ
イ素とハロゲンを含む化合物の分解生成物及びエツチン
グ作用を有する前記活性１１１ （Ｂ ）のどちらか一
方または両方の基体への導入量を変調することで、核形
成を制御する工程を堆積膜形成初期に含むことを特徴と
するものである。[Structure of the Invention] The present inventors have completed extensive research in order to solve various problems in the conventional chemical vapor deposition method and achieve the above-mentioned purpose. The main points are the active species (A) generated by decomposing a compound containing silicon and halogen, and the activity f! (
In the method of forming a deposited film by using active fiTI (B) produced from a film-forming chemical that chemically interacts with A), a decomposition product of a compound containing silicon and halogen that has an etching action is used. The present invention is characterized in that it includes a step of controlling nucleation at the initial stage of deposited film formation by modulating the amount of either or both of the active 111 (B) having an etching action introduced into the substrate. .
本発明においては、結晶成長初期の核の形成過程に着目
し、多結晶薄膜の粒径を決定している核の形成密度をエ
ツチング及び第１の堆積の工程を綬り返えすことで制御
するものである。第１の堆積工程にあたる核の形成段階
においては、２種類の核が存在している。即ち核表面績
と体積の比率によって臨界半径以上のものは安定核とし
て存在し臨界半径以下のものは不安定な核として存在し
ている。In the present invention, we focus on the formation process of nuclei at the initial stage of crystal growth, and control the formation density of nuclei, which determines the grain size of polycrystalline thin films, by reversing the etching and first deposition steps. It is something. In the nucleus formation stage, which is the first deposition step, two types of nuclei are present. That is, depending on the ratio of nuclear surface area to volume, those with a radius greater than the critical radius exist as stable nuclei, and those with a radius less than the critical radius exist as unstable nuclei.
本発明はこの安定核及び不安定核のエツチングによる消
滅速度の違いを利用し、エツチングと第１の堆積の工程
を堆積初期の段階に導入することで核形成密度を制御し
大粒径結晶薄膜を作成することが可能としたものである
。The present invention takes advantage of the difference in the rate of disappearance of stable and unstable nuclei due to etching, and controls the nucleation density by introducing the etching and first deposition steps in the initial stage of deposition, thereby forming a large-grain crystal thin film. This makes it possible to create .
なお、本発明においては堆積初期段階とは、前記不安定
な核の消滅および不安定な核の安定核への成長過程の段
階とする。In the present invention, the initial stage of deposition refers to the stage in which the unstable nuclei disappear and the unstable nuclei grow into stable nuclei.
しかしながら本発明者の研究によれば、エツチング作用
と堆積作用を単純に繰り返すだけでは効果はあるものの
結晶粒径の飛躍的な拡大は期待できず、エツチング作用
と堆積作用の繰り返しの中で除々にエツチング作用を弱
わめて行くことで結晶粒径の飛躍的な拡大が現われるこ
とを発見した堆積作用とエツチング作用の繰り返しの中
でエツチング作用を除々に弱わめる制御法として、エツ
チング作用時間を堆積作用時間に比して除々に減少させ
る方法及び、エツチングしている活性種の濃度を除々に
減少させる方法を考案した。However, according to the research conducted by the present inventors, although it is effective to simply repeat the etching action and the deposition action, a dramatic increase in crystal grain size cannot be expected; It was discovered that by weakening the etching effect, a dramatic expansion in crystal grain size appeared.As a control method to gradually weaken the etching effect during the repetition of the deposition and etching effects, the etching action time was We devised a method for gradually decreasing the concentration of etching active species compared to the deposition time, and a method for gradually decreasing the concentration of active species being etched.
本発明に於いて第２の堆積膜形成性工程とは、結晶成長
を行うための工程であって、前記第１の堆積工程と第２
の堆積工程の条件は同一でも異なっていても構わない。In the present invention, the second deposited film forming step is a step for performing crystal growth, and is a step for performing crystal growth, which is different from the first deposition step and the second deposited film forming step.
The conditions for the deposition process may be the same or different.
また、特に本発明の堆積膜形成方法によれば、堆積膜形
成初期において結晶成長の核の形成過程が粒径を決定し
ているため、結晶薄膜の特性制御が可能であり、薄膜電
子デバイスから要求される様々の仕様に対して高品質で
均一な特性を有する堆積膜を安定して供給できる。In addition, especially according to the deposited film forming method of the present invention, since the grain size is determined by the formation process of crystal growth nuclei in the early stage of deposited film formation, it is possible to control the characteristics of the crystalline thin film, and it is possible to It is possible to stably supply deposited films with high quality and uniform characteristics for various required specifications.
第１図は本発明の実施態様を示す実験装置の略図である
。同図で１はケイ素とハロゲンを含む化合物を導入する
ガス導入管、２はケイ素とハロゲンを含む化合物を分解
することにより生成される活性種（Ａ）と化学反応する
成膜用化学物質を導入するガス導入管。３は基体。４は
基体３を保持するホルダーであり基体温度を適宜設定で
きる様ヒーターが内蔵されている。ガス導入管１及び２
より導入される各ガスは未反応、または反応生成物を含
め真空ポンプ（図示せず。）で排気される。FIG. 1 is a schematic diagram of an experimental apparatus illustrating an embodiment of the present invention. In the figure, 1 is a gas introduction pipe that introduces a compound containing silicon and halogen, and 2 is a gas introduction pipe that introduces a chemical substance for film formation that chemically reacts with the active species (A) generated by decomposing the compound containing silicon and halogen. gas introduction pipe. 3 is the base. Reference numeral 4 denotes a holder that holds the substrate 3, and has a built-in heater so that the temperature of the substrate can be appropriately set. Gas introduction pipes 1 and 2
Each gas introduced by the reactor, including unreacted or reaction products, is evacuated by a vacuum pump (not shown).
ガス導入管１より導入されるケイ素とハロゲンを含む化
合物は、高周波電力発生装置の制御により、一部または
全てが分解され会合空間５へ導入される。一方、ガス導
入管２より導入される活性ｆｆｆｌ（Ｂ）となるガスを
導入し、高周波電力発生装置によりプラズマ分解され活
性種（Ｂ）を多量生成し会合空間５へ導入される会合空
間５にてケイ素とハロゲンを含む化合物の分解生成物で
ある活性種（Ａ）とこれと化学反応する活性種（Ｂ）は
化学反応を経て基体３へと輸送され基板表面反応を経て
、堆積膜を形成する。A compound containing silicon and halogen introduced from the gas introduction pipe 1 is partially or completely decomposed and introduced into the association space 5 under the control of the high frequency power generator. On the other hand, a gas that becomes active fffl (B) is introduced from the gas introduction pipe 2 and is plasma decomposed by a high frequency power generator to generate a large amount of active species (B), which is introduced into the meeting space 5. The active species (A), which is a decomposition product of a compound containing silicon and halogen, and the active species (B) that chemically react with the active species (B) undergo a chemical reaction, are transported to the substrate 3, and undergo a substrate surface reaction to form a deposited film. do.
また、本発明は、前記ケイ素とハロゲンを含む化合物の
高周波電力により分解生成して得られる活性種の濃度を
上げて基体３上に導入することで堆積膜のエツチングを
行うことが可能であり、また、活性種（Ａ）と化学反応
する活性種（Ｂ）の濃度を上げて基体３上に導入するこ
とでも同様の堆積膜のエツチングが可能である。Further, in the present invention, it is possible to perform etching of the deposited film by increasing the concentration of active species obtained by decomposing and producing the compound containing silicon and halogen with high frequency power and introducing it onto the substrate 3. Furthermore, similar etching of the deposited film is also possible by increasing the concentration of the active species (B) that chemically reacts with the active species (A) and introducing it onto the substrate 3.
また本発明に適用される堆積膜の母材としてはＩｖ族系
半導体で原料ガス（Ａ）としてハロゲンを含む化合物が
用いられる。具体的には、ＳｉＦ４ 、
（ＳｉＦ２）ｓ（ＳｉＦｚ ）ｓ 、 （ＳｉＦ
２ ）４Ｓｔ２ Ｆ６ 、 Ｓｉ３ Ｆ８Ｓ
ｉ ＨＦ ３ 、 Ｓ ｉ Ｈ２Ｆ ２ＳｉＣ
，Ｑ４ 、 （ＳｉＣ１２）ｓＳｉＢｒ４
、 （ＳｉＢｒ２）ｓＳｉ ２ （：Ｊ２．
、 Ｓｉ ２ Ｂｒ６ＳｉＨＣｆ１
３ 、 ５ｉＨ３Ｃ℃ＳｉＨ２Ｃｎ ２
、 ５ｉＨＢｒ ３ＳｉＨＩ ３
、 Ｓｉ ２ ＣＪ２３ Ｆ３などのガス
状または、容易にガス化し得るものがあげられる。また
、前記ケイ素とハロゲンを含む化合物に加えて、必要に
応じてケイ素単体の他のケイ素化合物、水素ハロゲン化
合物、また高周波電力によるプラズマの安定化のために
Ａｒ、Ｈｅなどの不活性ガスを加えてもよい。Further, as the base material of the deposited film applied to the present invention, a compound containing a group Iv semiconductor and a halogen as the raw material gas (A) is used. Specifically, SiF4,
(SiF2)s(SiFz)s, (SiF
2) 4St2 F6, Si3 F8S
i HF 3 , S i H2F 2SiC
,Q4, (SiC12)sSiBr4
, (SiBr2)sSi 2 (:J2.
, Si2Br6SiHCf1
3, 5iH3C℃SiH2Cn 2
, 5iHBr 3SiHI 3
, Si 2 CJ23 F3, etc., or those that can be easily gasified. In addition to the above-mentioned compounds containing silicon and halogen, other silicon compounds such as simple silicon, hydrogen halogen compounds, and inert gases such as Ar and He may be added to stabilize the plasma by high-frequency power. You can.
次にガラス基板上の多結晶薄膜の形成について具体的な
実施例により本発明の詳細な説明する。Next, the present invention will be described in detail with reference to specific examples regarding the formation of a polycrystalline thin film on a glass substrate.
ケイ素とハロゲンを含む化合物としてＳｉＦ４ガスをま
たこれを化学反応する物質として水素ガスを用いて説明
する。An explanation will be given using SiF4 gas as a compound containing silicon and halogen, and hydrogen gas as a substance that chemically reacts with the SiF4 gas.
下記の第１表の条件は第１の堆積工程及びエツチング工
程の繰り返えし工程をもたない条件でガラス基板上に５
００人の粒径を持つ結晶シリコン薄膜が形成できるとき
のものである。The conditions shown in Table 1 below are the conditions in which the first deposition step and the etching step are not repeated.
This is the case when a crystalline silicon thin film having a grain size of 0.00 μm can be formed.
第 １ 表
高周波電力 ２．４５ＧＨｚ ４００ｗ基体温度３０
０℃
成膜空間圧力 １００ｍＴｏｒｒ
次に本発明の特徴となる堆積膜形成初期に、多結晶薄膜
の粒径の制御についての説明をする。Table 1 High frequency power 2.45GHz 400w Base temperature 30
0° C. Film-forming space pressure: 100 mTorr Next, control of the grain size of the polycrystalline thin film at the initial stage of deposited film formation, which is a feature of the present invention, will be explained.
即ち、ガス導入管１及び２より定常的に各ガスを導入し
ている場合には堆積膜の形成条件となり、ガス導入管１
又は２を休止している状態では堆積膜は基体３上でエツ
チング条件にな）ている。特に、結晶成長における初期
過程で安定核を選択的に成長させ、不安定核を消滅させ
ることで核の形成密度を制御するとともに粒径の大きな
多結晶薄膜を形成することが可能となる。エツチング工
程のある活性種としてケイ素とハロゲンを含む化合物の
高周波電力による分解生成物を用いた場合、及び活性ｆ
！（Ｂ）を用いた場合とがあるが本実施例においては後
者のエツチング作用をもつ場合について述べることにす
る。又、エツチング作用を除々に弱わめる方法としてエ
ツチング作用を有する活性種（Ｂ）の濃度を除々に低く
し堆積の標準条件即ち第２の堆積工程へと移行させる場
合について述べる。In other words, if each gas is introduced steadily from the gas introduction pipes 1 and 2, this is the condition for forming a deposited film, and the gas introduction pipe 1
Alternatively, in a state in which 2 is inactive, the deposited film is under etching conditions on the substrate 3. In particular, by selectively growing stable nuclei and extinguishing unstable nuclei in the initial process of crystal growth, it becomes possible to control the density of nuclei formation and form a polycrystalline thin film with a large grain size. In the case where a decomposition product of a compound containing silicon and halogen by high frequency power is used as an active species in the etching process, and the activity f
! (B) may be used, but in this embodiment, the latter case having an etching effect will be described. In addition, as a method of gradually weakening the etching effect, a case will be described in which the concentration of the active species (B) having the etching effect is gradually lowered and the process proceeds to the standard deposition conditions, that is, the second deposition step.
本実施例では、基本的作成条件は第１表に示した通りで
あるが、堆積初期の段階で第２図に示すように、ガス導
入管ｌから導入されるＳｉＦ４ガス流量は７６ｓｅｃｍ
で等間隔で導入し、ガス導入管２から導入される水素ガ
ス流量は４０ｓｅｃｍから等間隔で流量を徐々に減少さ
せながら一定流量の３０ｓｅｃｍに達するよう調整して
導入している。但しＳ ｉ Ｆ４ガスの流量が７６ｓｅ
ｃｍで導入されているときは水素ガスは３０ｓｅｃｍ導
入され堆積条件となっている。このことにより、第１の
堆積工程及びエツチング工程の各時間は一定であるが、
水素プラズマによるエツチング速度は水素ガスの導入量
にほぼ比例しているので初期段階では高く時間とともに
徐々に低下して行くことになる。このように堆積とエツ
チングの各工程を繰り返しながら徐々にエツチングを弱
わめ第２の堆積工程に好打して作成される堆積膜につい
て粒径の評価を行なった。評価としてこの多結晶シリコ
ン薄膜の表面透過型電子顕微鏡（ＴＥＭ）観察を行なっ
たところ、平均粒径は４０００人であった。In this example, the basic preparation conditions are as shown in Table 1, but at the initial stage of deposition, as shown in FIG.
The flow rate of hydrogen gas introduced from the gas introduction pipe 2 is adjusted to gradually decrease from 40 seconds at equal intervals until reaching a constant flow rate of 30 seconds. However, the flow rate of S i F4 gas is 76se
When the hydrogen gas is introduced at a rate of 30 seconds, the hydrogen gas is introduced at a rate of 30 seconds, which is the deposition condition. As a result, although the times of the first deposition step and the etching step are constant,
Since the etching rate by hydrogen plasma is approximately proportional to the amount of hydrogen gas introduced, it is high in the initial stage and gradually decreases with time. While repeating each of the deposition and etching steps in this manner, the etching was gradually weakened and the second deposition step was performed to evaluate the grain size of the deposited film. For evaluation, this polycrystalline silicon thin film was observed using a surface transmission electron microscope (TEM), and the average grain size was 4,000.
従来法のエツチング及び堆積の繰り返し工程のないＳ
ｉ Ｆ４ガスを７６ｓｅｃｍよりスタートした場合には
８００人程度であったのと比較し粒径の拡大が確認され
た。また、エツチング及び堆積の繰り返し工程のある場
合についても比較を行なった。S without the conventional process of repeated etching and deposition
When the iF4 gas was started from 76 seconds, there were about 800 people, but an increase in particle size was confirmed. Comparisons were also made in the case of repeated etching and deposition steps.
（比較例１〕
同様に第２図において水素ガス流量を初期の段階から３
０ｓｅｃｍに固定しガス導入間隔及びその他の条件は同
一にして結晶薄膜を作成し、ＴＥＭで観察した平均粒径
は３０００人程度であり、水素プラズマによるエツチン
グ作用と堆積作用の繰り返しによっても粒径拡大は認め
られることがわかる。(Comparative Example 1) Similarly, in Figure 2, the hydrogen gas flow rate was changed from the initial stage to 3.
A crystal thin film was created with the gas introduction interval fixed at 0 sec and other conditions the same, and the average grain size observed by TEM was about 3000, and the grain size increased by repeating the etching action and deposition action using hydrogen plasma. It turns out that this is acceptable.
〔実施例２〕
〔実施例１〕と同様の装置を用いて基本的作成条件は第
１表に示した通りであるが、堆積初期の段階で第３図に
示すようにガス導入管２より導入される水素ガスの流量
を３０ｓｅｃｍ一定とし、ＳｉＦ４ガスを導入しない時
間を徐々に減少させてた。[Example 2] Using the same equipment as [Example 1], the basic preparation conditions are as shown in Table 1, but at the initial stage of deposition, as shown in Fig. 3, The flow rate of hydrogen gas introduced was kept constant at 30 seconds, and the time during which SiF4 gas was not introduced was gradually decreased.
この条件下でＳｉＦ、が導入される時間は堆積工程、Ｓ
ｉＦ４が導入されない時間は水素プラズマによるエツチ
ング工程となっている。よってＳ ｉ Ｆ、ガスを導入
しない時間を徐々に減少させることは水素プラズマによ
るエツチング工程時間を短くしていることになる。Under these conditions, the time during which SiF is introduced is the deposition step, S
During the time when iF4 is not introduced, an etching process is performed using hydrogen plasma. Therefore, by gradually decreasing the time during which no SiF gas is introduced, the etching process time using hydrogen plasma is shortened.
この様にして得られる多結晶シリコン薄膜の表面ＴＥＭ
観察による平均粒径は約４０００人であり、堆積工程と
水素プラズマによるエツチング工程を繰り返し徐々にエ
ツチング工程時間を短くすることで粒径の拡大が可能で
あることがわかる。Surface TEM of the polycrystalline silicon thin film obtained in this way
The average grain size observed was approximately 4,000 particles, and it was found that the grain size could be increased by repeating the deposition process and the etching process using hydrogen plasma and gradually shortening the etching process time.
Ｃ実施例３〕
同様の装置を用いて基本的作成条件は第１表に示した通
りであるが、堆積初期の段階で第４図に示すようにガス
導入管２より導入される水素ガス流量を等間隔で３０ｓ
ｅｃｍ導入する一方、５ｔＦ４ガスをガス導入管１より
等間隔で１００ｓｅｃｍから減少させ一定流量の７６ｓ
ｅｃｍになるよう調整して導入する。ここでＳｉＦ４ガ
ス流量が７６ｓｅｃｍかつ水素ガス流量３０ｓｅｃｍの
条件下においては堆積条件であるが、Ｓ ｉ Ｆ４ガス
のみが導入されている条件ではＳ ｉ Ｆ４プラズマに
よってエツチング条件となっている。さらにエツチング
速度はＳｉＦ４の流量にほぼ比例するのでＳｉＦ４流量
を１０１００５ｅから７６ｓｅｃｍへ減少させることで
エツチング速度は低くなっている。C Example 3] The basic preparation conditions are as shown in Table 1 using a similar device, but the hydrogen gas flow rate introduced from the gas introduction pipe 2 at the initial stage of deposition is as shown in FIG. at equal intervals for 30s
While introducing ecm, 5tF4 gas was decreased from 100sec at equal intervals from gas introduction pipe 1 for 76s at a constant flow rate.
Adjust it so that it becomes ecm and install it. Here, the condition where the SiF4 gas flow rate is 76 sec and the hydrogen gas flow rate is 30 sec is a deposition condition, but the condition where only SiF4 gas is introduced is an etching condition by SiF4 plasma. Furthermore, since the etching rate is approximately proportional to the flow rate of SiF4, the etching rate is lowered by reducing the SiF4 flow rate from 101005e to 76 seconds.
この様にして得られる多結晶シリコン薄膜の表面ＴＥＭ
観察による平均粒径は約４０００スであり、堆積工程と
Ｓ ｉ Ｆ４プラズマによるエツチング工程を繰り返え
し徐々にエツチング工程を弱めることで粒径の拡大が可
能であることがわかる。Surface TEM of the polycrystalline silicon thin film obtained in this way
The average grain size observed was about 4000 mm, and it was found that the grain size could be increased by repeating the deposition process and the etching process using SiF4 plasma and gradually weakening the etching process.
〔実施例４〕
同様にして堆積初期の段階で第５図に示すようにガス導
入管１より導入するＳｉＦ４ガスの流量を７６ｓｅｃｍ
一定としておき、ガス導入管２より導入する水素ガスは
その導入しない時間を徐々に減少させて導入する。ここ
でＳ ｉ Ｆ４ガス流量７６ｓｅｃｍかつ水素ガス３０
ｓｅｃｍが重なった領域では堆積の工程であり、水素ガ
スが導入されていない領域では、Ｓ Ｉ Ｆ ４プラズ
マによるエツチング工程となっている。今、水素ガスの
導入されない時間が徐々に短かくなることはＳｉＦ４プ
ラズマによるエツチング時間が短かくなることである。[Example 4] Similarly, at the initial stage of deposition, the flow rate of the SiF4 gas introduced from the gas introduction pipe 1 was set to 76 sec as shown in FIG.
The hydrogen gas is kept constant, and the hydrogen gas introduced from the gas introduction pipe 2 is introduced while gradually reducing the time during which it is not introduced. Here, the S i F4 gas flow rate is 76 sec and the hydrogen gas is 30 sec.
In the region where the secm overlaps, a deposition process is performed, and in the region where hydrogen gas is not introduced, an etching process using S IF 4 plasma is performed. Now, the time when hydrogen gas is not introduced is gradually shortened, which means that the etching time using SiF4 plasma is shortened.
この様にして得られる多結晶シリコン薄膜の平均粒径は
４５００人程度であり、堆積工程とＳ ｉ Ｆ４プラズ
マによるエツチング工程を繰り返えし徐々にエツチング
工程を短かくすることで粒径の拡大が可能であることが
わかる。The average grain size of the polycrystalline silicon thin film obtained in this way is about 4,500 grains, and the grain size can be increased by repeating the deposition process and the etching process using SiF4 plasma and gradually shortening the etching process. It turns out that it is possible.
また実施例１から実施例４までの内容をまとめ第 ２
表
〔実施例５）
第６図は本実施例を説明するために用いる成膜装置の概
略図である。同図において、１１はガス導入リングで主
としてケイ素とハロゲンを含む化合物を真空チャンバー
１９へ導入する。１２はガス導入管であり、主として活
性種（Ｂ）の原料となるガスを石英キャビティ１３内へ
導入する。マイクロ波はマイクロ波発振器（図示せず。The contents of Examples 1 to 4 are summarized in Table 2 (Example 5). FIG. 6 is a schematic diagram of a film forming apparatus used to explain this example. In the figure, reference numeral 11 denotes a gas introduction ring for introducing a compound mainly containing silicon and halogen into the vacuum chamber 19. Reference numeral 12 denotes a gas introduction pipe, which mainly introduces gas, which is a raw material for active species (B), into the quartz cavity 13. The microwave is generated by a microwave oscillator (not shown).
）より発生し導波管１５内を伝搬ししぼり１６を適宜調
整することによりしぼり１６とメツシュ１４の間に定在
波を発生させ石英キャビティ１３内に存在するガスをプ
ラズマ化することができる。１７はヒーター内蔵のホル
ダーであり基体１８を所望の温度に加熱保持することが
可能である。) and propagates within the waveguide 15, and by adjusting the aperture 16 appropriately, a standing wave is generated between the aperture 16 and the mesh 14, and the gas present in the quartz cavity 13 can be turned into plasma. Reference numeral 17 denotes a holder with a built-in heater, which can heat and maintain the substrate 18 at a desired temperature.
本実施例では基体１８にガラス基体を用いた。In this example, a glass substrate was used as the substrate 18.
ガス導入管１２より、水素ガス２０ｓｃｃｍ及びＨｅガ
ス４０ｓｅｃｍを石英キャビティ１３へ導入する。また
ガス導入リング１１より５ｉ２Ｆ。20 sccm of hydrogen gas and 40 seconds of He gas are introduced into the quartz cavity 13 through the gas introduction pipe 12 . Also, 5i2F from the gas introduction ring 11.
ガス１０１０５ｅを第６図に示すように基体１８に向け
て導入する。マイクロ波発振器の電力を２５０Ｗに調整
し、しぼり１６を調整することで石英キャビティ１３内
の水素及びＨｅガスをプラズマ化することが可能である
。この様にして生成される水素ラジカルはガス導入リン
グ１１より噴出す５ｔ２Ｆ６ガスと化学反応しガラス基
板上にシリコン薄膜を堆積する。ガラス基板上に６００
人程度の粒径をもつ結晶シリコン薄膜の作成条件を以下
の第３表に示す。Gas 10105e is introduced toward the substrate 18 as shown in FIG. By adjusting the power of the microwave oscillator to 250 W and adjusting the throttle 16, it is possible to turn the hydrogen and He gas in the quartz cavity 13 into plasma. The hydrogen radicals thus generated chemically react with the 5t2F6 gas ejected from the gas introduction ring 11 to deposit a silicon thin film on the glass substrate. 600 on a glass substrate
Table 3 below shows the conditions for creating a crystalline silicon thin film having a grain size on the order of a human.
第 ３
表
マイクロ波電力 ２５０Ｗ
基 体 温 度 ３００℃真空キャンバ
−内圧力 ５０ｍＴｏｒｒ木実施例では堆積初期の段階
で第７図に示すように、ガス導入リング１１から導入さ
れるＳｉ２Ｆ６ガス流量は１０１０５ｅで等間隔で導入
し、ガス導入管１２から導入される水素ガス流量は５０
ｓｅｃｍから等間隔で流量を徐々に減少させながら一定
流量の２０ｓｅｃｍに達するよう導入している。但し５
ｔ２Ｆ６ガスの流量が１０１０５ｅで導入されている間
は水素ガスは２０ｓｅｃｍで導入され第１および第２の
堆積工程の各条件となっている。このことにより、堆積
工程及びエツチング工程の各時間は一定であるが水素プ
ラズマによるエツチング速度は水素ガスの導入量にほぼ
比例しているので初期段階では高く、時間とと・もに徐
々に低下して行くことになる。このように堆積とエツチ
ングの各工程を繰り返しながら徐々にエツチングを弱め
て行って作成される堆積膜について粒径の評価を行なっ
た。Table 3 Microwave power 250W Base temperature 300°C Vacuum camber internal pressure 50mTorr Wood In the example, at the initial stage of deposition, as shown in FIG. 7, the Si2F6 gas flow rate introduced from the gas introduction ring 11 was 10105e. The hydrogen gas flow rate introduced from the gas introduction pipe 12 at equal intervals is 50
The flow rate is gradually reduced from secm at equal intervals until it reaches a constant flow rate of 20 secm. However, 5
While the t2F6 gas is introduced at a flow rate of 10105e, the hydrogen gas is introduced at a rate of 20 seconds to meet the conditions for the first and second deposition steps. As a result, although the times of the deposition process and the etching process are constant, the etching rate by hydrogen plasma is almost proportional to the amount of hydrogen gas introduced, so it is high in the initial stage and gradually decreases with time. I'm going to go. The grain size of the deposited film formed by repeating the deposition and etching steps and gradually weakening the etching process was evaluated.
ＴＥＭによる表面観察で、この膜の平均粒径は４０００
人であった。従来法のエツチング及び堆積の繰り返し工
程のない５ｉｚＦａガス１０１０５ｃ及び水素ガス２０
ｓｅｃｍで堆積を開始した場合には先にも示したように
６００人程人程あったのと比較して粒径の拡大が確認さ
れた。Surface observation using TEM revealed that the average grain size of this film was 4000.
It was a person. 5izFa gas 10105c and hydrogen gas 20 without the conventional repeated etching and deposition steps
When deposition started at secm, there were about 600 people as shown above, but an increase in particle size was confirmed.
また、エツチング条件を弱めることのないエツチング及
び堆積の繰り返し工程のある場合についても比較を行な
った。Comparisons were also made with repeated etching and deposition steps without weakening the etching conditions.
（比較例２）
第６図において水素ガス流量を初期の段階から２０ｓｅ
ｃｍに固定しガス導入間隔及びその他の条件は同一にし
て結晶薄膜を作成し、ＴＥＭで表面観察を行なったとこ
ろ平均粒径は２０００人程度人程った。(Comparative Example 2) In Fig. 6, the hydrogen gas flow rate was set at 20se from the initial stage.
A crystal thin film was prepared with the gas introduction interval fixed at cm and other conditions the same, and the surface was observed using a TEM, and the average particle size was about 2000 particles.
このことにより、水素プラズマによるエツチングと堆積
の各工程の繰り返しのみでも粒径の拡大が認められ、さ
らに拡大を期待するにはエツチング条件を徐々に弱めて
行くのが効果的であることがわかる。This shows that the grain size can be increased by simply repeating the steps of etching and deposition using hydrogen plasma, and that it is effective to gradually weaken the etching conditions in order to expect further expansion.
以上述べた様に本発明により、ガラス基板上に低温の３
００℃で粒径３０００人から４５００人程度０多結晶シ
リコン薄膜が得られる様になり、このことで薄膜半導体
電子デバイスの高速化をさらに進めることが可能となっ
た。As described above, according to the present invention, low-temperature three-dimensional
It has become possible to obtain a polycrystalline silicon thin film with a grain size of about 3,000 to 4,500 at 00°C, and this has made it possible to further increase the speed of thin film semiconductor electronic devices.
また更に、生産性、量産性に優れ、高品質で半導体等の
物理特性の優れた結晶質の膜を簡単に得ることができる
。Furthermore, it is possible to easily obtain a crystalline film with excellent productivity and mass production, high quality, and excellent physical properties such as a semiconductor.
第１図は本発明の実施例に用いた成膜装置の模式的概略
図である。
第２図から第５図はそれぞれ本発明の実施例から実施例
４を説明するためのガス導入ダイヤグラムである。
第６図は実施例５に用いた成膜装置の模式的概略図であ
る。第７図は実施例５を説明するためのガス導入ダイヤ
グラムである。
第１図
１ ・・・・・ ガス導入管
２ ・・・・ ガス導入管
３ ・・・・・ 基体
４ ・・・・ ホルダー
５ ・・・・・ 会合空間
第６図
１１ ・・・・ ガス導入リング
１２ ・・・ ガス導入管
１３ ・・・・ 石英キャビティ
１４ ・・・ メツシュ
１５ ・・・ マイクロ波導波管
１６ ・・・・ しぼり
１７ ・・・・ ホルダー
８
基体
真空ヂャンバー
手糸売ネ甫正書（自発）
平成２年 １月１０日FIG. 1 is a schematic diagram of a film forming apparatus used in an example of the present invention. 2 to 5 are gas introduction diagrams for explaining embodiments to embodiment 4 of the present invention, respectively. FIG. 6 is a schematic diagram of a film forming apparatus used in Example 5. FIG. 7 is a gas introduction diagram for explaining the fifth embodiment. Fig. 1 1 ... Gas introduction pipe 2 ... Gas introduction pipe 3 ... Base 4 ... Holder 5 ... Meeting space Fig. 6 11 ... Gas Introduction ring 12 ... Gas introduction pipe 13 ... Quartz cavity 14 ... Mesh 15 ... Microwave waveguide 16 ... Squeezer 17 ... Holder 8 Base vacuum chamber Hand thread dispenser Original text (spontaneous) January 10, 1990
Claims (5)
より生成される活性種（Ａ）と該活性種（Ａ）と化学的
相互作用をし得る成膜用化学物質より生成される活性種
（Ｂ）とを夫々別々に成膜空間に導入して化学反応させ
て該成膜空間に設置された基体上に堆積膜を形成する堆
積膜形成方法において、堆積膜形成初期にエッチング工
程及び第１の堆積工程を１回または複数回繰り返した後
、第２の堆積工程に移行する工程を含むことを特徴とす
る堆積膜形成方法。(1) Active species (A) generated by decomposing a compound containing silicon and halogen; and active species (B) generated from film-forming chemicals that can chemically interact with the active species (A). ) are separately introduced into a film forming space and chemically reacted to form a deposited film on a substrate placed in the film forming space. A method for forming a deposited film, comprising the step of repeating the deposition step one or more times and then proceeding to a second deposition step.
合物の分解生成物で達成されることを特徴とする特許請
求の範囲第１項記載の堆積膜形成方法。(2) The method for forming a deposited film according to claim 1, wherein the etching step is performed using a decomposition product of a compound containing silicon and halogen.
相互作用をする成膜用化学物質より生成される活性種（
Ｂ）で達成されることを特徴とする特許請求の範囲第１
項記載の堆積膜形成方法。(3) In the etching process, active species (
B) Claim 1 characterized in that
The deposited film forming method described in Section 1.
工程及び第１の堆積工程を１回または複数回繰り返す工
程のうち該エッチング工程のエッチング時間を除々に短
かくすることを特徴とする特許請求の範囲第１項記載の
堆積膜形成方法。(4) In the initial stage of forming the deposited film, the etching time of the etching step is gradually shortened among the steps of repeating the etching step and the first deposition step one or more times. The deposited film forming method according to scope 1.
程及び第１の堆積工程を１回または複数回繰り返す工程
のうち該エッチング工程のエッチング作用活性種の濃度
が除々に減少することを特徴とする特許請求の範囲第１
項記載の堆積膜形成方法。(5) A patent characterized in that in the initial stage of forming the deposited film, the concentration of etching active species in the etching step of the step of repeating the etching step and the first deposition step one or more times gradually decreases. Claim 1
The deposited film forming method described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26705989A JPH03126222A (en) | 1989-10-12 | 1989-10-12 | Deposited-film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26705989A JPH03126222A (en) | 1989-10-12 | 1989-10-12 | Deposited-film forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03126222A true JPH03126222A (en) | 1991-05-29 |
Family
ID=17439464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26705989A Pending JPH03126222A (en) | 1989-10-12 | 1989-10-12 | Deposited-film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03126222A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08255759A (en) * | 1995-03-17 | 1996-10-01 | Canon Inc | Deposit method of polycrystalline si thin film |
| US5686349A (en) * | 1992-10-07 | 1997-11-11 | Sharp Kabushiki Kaisha | Fabrication of a thin film transistor and production of a liquid crystal display apparatus |
| EP0822582A2 (en) * | 1996-08-01 | 1998-02-04 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
| US6187685B1 (en) | 1997-08-01 | 2001-02-13 | Surface Technology Systems Limited | Method and apparatus for etching a substrate |
| US6261962B1 (en) | 1996-08-01 | 2001-07-17 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
| US6417013B1 (en) | 1999-01-29 | 2002-07-09 | Plasma-Therm, Inc. | Morphed processing of semiconductor devices |
| WO2008015765A1 (en) * | 2006-08-04 | 2008-02-07 | The Kansai Electric Power Co., Inc. | Bipolar semiconductor device and process for producing the same |
-
1989
- 1989-10-12 JP JP26705989A patent/JPH03126222A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5686349A (en) * | 1992-10-07 | 1997-11-11 | Sharp Kabushiki Kaisha | Fabrication of a thin film transistor and production of a liquid crystal display apparatus |
| JPH08255759A (en) * | 1995-03-17 | 1996-10-01 | Canon Inc | Deposit method of polycrystalline si thin film |
| EP0822582A2 (en) * | 1996-08-01 | 1998-02-04 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
| EP0822582A3 (en) * | 1996-08-01 | 1998-05-13 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
| US6051503A (en) * | 1996-08-01 | 2000-04-18 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
| US6261962B1 (en) | 1996-08-01 | 2001-07-17 | Surface Technology Systems Limited | Method of surface treatment of semiconductor substrates |
| US6187685B1 (en) | 1997-08-01 | 2001-02-13 | Surface Technology Systems Limited | Method and apparatus for etching a substrate |
| US6417013B1 (en) | 1999-01-29 | 2002-07-09 | Plasma-Therm, Inc. | Morphed processing of semiconductor devices |
| WO2008015765A1 (en) * | 2006-08-04 | 2008-02-07 | The Kansai Electric Power Co., Inc. | Bipolar semiconductor device and process for producing the same |
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