JPH03119769A - Light-emitting module - Google Patents
Light-emitting moduleInfo
- Publication number
- JPH03119769A JPH03119769A JP1256171A JP25617189A JPH03119769A JP H03119769 A JPH03119769 A JP H03119769A JP 1256171 A JP1256171 A JP 1256171A JP 25617189 A JP25617189 A JP 25617189A JP H03119769 A JPH03119769 A JP H03119769A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- metal substrate
- light
- soft resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229920002050 silicone resin Polymers 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229920000098 polyolefin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 102100030931 Ladinin-1 Human genes 0.000 description 1
- 101710177601 Ladinin-1 Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、ボンディングワイヤの断線を起こし難いヒー
トシンク型の発光モジュールに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a heat sink type light emitting module in which bonding wires are less likely to break.
従来の技術
従来、発光ダイオードを樹脂モールドしてなるＬＥＤラ
ンプを、回路パターンを設けたガラス・エポキシ基板上
に多数連結してなる発光体が知られていた。かかる発光
体は、デイスプレィや照明装置等の種々の発光装置分野
で使用されている。2. Description of the Related Art Conventionally, a light emitting body has been known in which a large number of LED lamps each having a light emitting diode molded in resin are connected on a glass epoxy substrate provided with a circuit pattern. Such light-emitting bodies are used in various fields of light-emitting devices such as displays and lighting devices.
しかし、ＬＥＤランプの形成等その製造効率に劣り、ま
た放熱性に乏しくて蓄熱によるＬＥＤランプの破壊を予
防するために電流を小さくする必要があり、光度に劣る
難点があった。However, the production efficiency of LED lamps is poor, and the heat dissipation is poor, so it is necessary to reduce the current to prevent destruction of the LED lamps due to heat accumulation, and the luminous intensity is poor.
発明が解決しようとする課題
前記の難点を克服するものとしてヒートシンク型の発光
体が提案されている。これは、絶縁金属基板に多数の窪
みを設け、その各窪みに発光ダイオードを設置して発光
体を形成したものであり、絶縁金属基板に基づく良好な
放熱性に基づいて蓄熱を抑制できる結果、発光ダイオー
ドに高電流を流すことが可能になり、光度を高めること
ができる。Problems to be Solved by the Invention A heat sink type light emitter has been proposed to overcome the above-mentioned difficulties. This is a device in which a large number of depressions are provided on an insulated metal substrate, and a light emitting diode is installed in each depression to form a light emitting body.As a result, heat accumulation can be suppressed based on the good heat dissipation properties of the insulated metal substrate. This allows high current to flow through the light emitting diode, increasing its luminous intensity.
前記したヒートシンク型発光体における多数の発光ダイ
オードは、絶縁金属基板上に絶縁層を介して設けた回路
パターンとワイヤポンディングされ、これにより発光パ
ターンや、各発光ダイオードに対する供給電流の強弱に
より光度が制御される。また、発光装置の形成に際して
は通例、発光ダイオードに対しレンズ層を設けて光方向
が制御され、そのレンズ層は強度等の点より一般に硬質
樹脂で形成される。The large number of light emitting diodes in the heat sink type light emitter described above are wire-bonded to a circuit pattern provided on an insulating metal substrate through an insulating layer, and the luminous intensity varies depending on the light emitting pattern and the strength of the current supplied to each light emitting diode. controlled. Furthermore, when forming a light emitting device, the direction of light is usually controlled by providing a lens layer for the light emitting diode, and the lens layer is generally made of hard resin from the viewpoint of strength and the like.
しかしながら、硬質樹脂からなるレンズ層で発光ダイオ
ードと共にボンディングワイヤをカバーした場合、ボン
ディングワイヤが断線して発光体の光度が低下しやすい
ことが判明した。However, it has been found that when the bonding wire is covered together with the light emitting diode with a lens layer made of a hard resin, the bonding wire is likely to be disconnected and the luminous intensity of the light emitting body is likely to decrease.
本発明はその断線問題の克服を課題とする。The present invention aims to overcome this problem of disconnection.
課題を解決するための手段
本発明は、発光ダイオードとボンディングワイヤを軟質
樹脂でカバーし、その上に硬質樹脂からなるレンズ層を
設けることにより前記の課題を克服したものである。Means for Solving the Problems The present invention overcomes the above problems by covering the light emitting diode and the bonding wire with a soft resin, and providing a lens layer made of a hard resin thereon.
すなわち本発明は、絶縁金属基板に設けた窪みに設置さ
れた発光ダイオードが、絶縁金属基板上に絶縁層を介し
て設けた回路パターンと通電するためのボンディングワ
イヤと共に軟質樹脂でカバーされており、その軟質樹脂
層の外側に硬質樹脂からなるレンズ層を有することを特
徴とする発光モジュールを提供するものである。That is, in the present invention, a light emitting diode installed in a recess provided on an insulated metal substrate is covered with a soft resin together with a circuit pattern provided on the insulated metal substrate via an insulating layer and a bonding wire for conducting electricity. The present invention provides a light emitting module characterized by having a lens layer made of hard resin on the outside of the soft resin layer.
作用
硬質樹脂からなるレンズ層の内側に軟質樹脂からなる層
を設け、その軟質樹脂層で発光ダイオードとボンディン
グワイヤをカバーすることによりヒートショックが緩和
されるためか、ボンディングワイヤの断線が防止、ない
し抑制される。Effect: A layer made of soft resin is provided inside the lens layer made of hard resin, and heat shock is alleviated by covering the light emitting diode and bonding wire with the soft resin layer, which prevents disconnection of the bonding wire. suppressed.
実施例 第１図に本発明の発光モジュールを例示した。Example FIG. 1 illustrates a light emitting module of the present invention.
１が窪み１３を有する絶縁金属基板、２が回路パターン
、３が発光ダイオード、４がボンディングワイヤ、５が
軟質樹脂層、６がレンズ層である。1 is an insulated metal substrate having a recess 13, 2 is a circuit pattern, 3 is a light emitting diode, 4 is a bonding wire, 5 is a soft resin layer, and 6 is a lens layer.
絶縁金属基板１はアルミニウム、鋼、鉄、ステンレス、
ニッケルの如き金属、ないし合金などからなる金属基板
１１に、エポキシ系樹脂、ガラス繊維入りエポキシ系樹
脂、ポリオレフィンないし架橋ポリオレフィン、ポリイ
ミド系樹脂、ポリアミド系樹脂、ポリカーボネート、ア
クリル系樹脂の如き絶縁性材料からなる絶縁層１２を設
けてなる。窪み１３は例えば、絶縁金属基板を絞り加工
することにより形成することができ、その形成は回路パ
ターン２を形成した絶縁金属基板に対して行う方式が製
造効率の点より有利である。形成する窪みの形態は、例
えば断面に基づいて逆台形や半楕円形、放物線形など適
宜に決定してよ（、深さは発光ダイオードの厚さの１．
２〜１５倍、就中１．２〜５倍が一般的であるが、これ
に限定されない。The insulated metal substrate 1 is made of aluminum, steel, iron, stainless steel,
The metal substrate 11 is made of a metal such as nickel or an alloy, and is made of an insulating material such as epoxy resin, glass fiber-containing epoxy resin, polyolefin or crosslinked polyolefin, polyimide resin, polyamide resin, polycarbonate, or acrylic resin. An insulating layer 12 is provided. The recess 13 can be formed, for example, by drawing an insulated metal substrate, and it is more advantageous in terms of manufacturing efficiency to form the recess 13 on an insulated metal substrate on which the circuit pattern 2 is formed. The shape of the recess to be formed may be determined as appropriate, such as an inverted trapezoid, semi-ellipse, or parabolic shape, based on the cross section (the depth is 1 mm thick of the light emitting diode).
It is generally 2 to 15 times, especially 1.2 to 5 times, but is not limited thereto.
回路パターン２の形成は例えば、銅、金、ニッケル、ア
ルミニウムの如き金属、ないし合金からなる導電層を絶
縁金属基板の絶縁層１２の上に設け、その導電層をパタ
ーンエツチング処理する方式などにより行うことができ
る。形成する回路パターンは例えば第２図の如（、リー
ド部２１、発光ダイオード設置部２２、ワイヤボンディ
ング部２３等、絶縁金属基板１に設けた多数の窪み１３
に設置した各発光ダイオード３に、所定の通電を達成す
るパターンである。その場合、発光ダイオード３を設置
する窪み１３の側壁部にも金属や合金からなる導電層を
設けることにより、第１図の矢印の如（光の反射面とし
て機能させることができる。かかる反射面は必要に応じ
、光沢研磨や、ニッケル、金、クロムなどによる光沢メ
ツキを施して反射率の向上がはかられる。なお反射面は
必要に応じ設けるもので、前記方式に代えて例えば光反
射性のフェス層やペイント層、白色レジスト層、金属蒸
着層などを別途に設けてもよい。The circuit pattern 2 is formed, for example, by a method in which a conductive layer made of a metal such as copper, gold, nickel, or aluminum or an alloy is provided on the insulating layer 12 of the insulated metal substrate, and the conductive layer is pattern-etched. be able to. The circuit pattern to be formed is, for example, as shown in FIG.
This is a pattern that achieves a predetermined energization of each light emitting diode 3 installed in the area. In that case, by providing a conductive layer made of metal or alloy on the side wall of the recess 13 in which the light emitting diode 3 is installed, it can be made to function as a light reflecting surface (as shown by the arrow in FIG. 1). If necessary, the reflectance can be improved by polishing or plating with nickel, gold, chrome, etc. Reflective surfaces may be provided as necessary, and instead of the above method, for example, A face layer, a paint layer, a white resist layer, a metal vapor deposition layer, etc. may be separately provided.
発光ダイオード３は、その裏面の電極部が回路パターン
２と通電するよう銀ペーストの如き導電性接着剤を介し
、絶縁金属基板ｌの窪み１３の底部に固定設置されてい
る。かつ発光ダイオード３の表面の電極部がボンディン
グワイヤ４を介し、隣接する窪みに配置した回路パター
ンと通電可能に接続されている。The light emitting diode 3 is fixedly installed at the bottom of the recess 13 of the insulated metal substrate 1 via a conductive adhesive such as silver paste so that the electrode portion on the back side thereof is electrically connected to the circuit pattern 2. Further, an electrode portion on the surface of the light emitting diode 3 is electrically connected to a circuit pattern placed in an adjacent recess via a bonding wire 4.
また発光ダイオード３は、これに接続されたボンディン
グワイヤ４と共に透明な軟質樹脂層５でカバーされてい
る。軟質樹脂層の形成は例えば、樹脂液を塗工、ないし
注形する方式などにより行うことができ、必要に応じ絶
縁金属基板の全面に設けられる。軟質樹脂層の形成に用
いる樹脂としては、ヤング率が３０ ｋｇ ／ ｔａ
ｄ以下、就中１〜１０ｋｇ／ｓ−の透明な樹脂層を形成
するものが好ましく用いられる。その例としては、シリ
コーン樹脂、ポリ−４−メチルペンテン、ウレタン樹脂
、アクリル系樹脂、ポリオレフィン、ゴム系ポリマなど
があげられる。なお光度の点より、軟質樹脂層をその外
側に設けるレンズ層よりも屈折率の小さい樹脂で形成す
ることが有利である。Further, the light emitting diode 3 is covered with a transparent soft resin layer 5 together with a bonding wire 4 connected thereto. The soft resin layer can be formed, for example, by coating or casting a resin liquid, and is provided on the entire surface of the insulated metal substrate if necessary. The resin used to form the soft resin layer has a Young's modulus of 30 kg/ta.
It is preferable to use one that forms a transparent resin layer of less than d, especially 1 to 10 kg/s. Examples include silicone resins, poly-4-methylpentene, urethane resins, acrylic resins, polyolefins, rubber polymers, and the like. Note that from the viewpoint of luminous intensity, it is advantageous to form the soft resin layer with a resin having a smaller refractive index than the lens layer provided outside the soft resin layer.
レンズ層６は凸レンズとする方式が一般であるが、凹レ
ンズとしてもよい。レンズ層はエポキシ樹脂、ポリカー
ボネートなどの透明な硬質樹脂で形成される。レンズ層
の形成は例えば、絶縁金属基板の窪みに対応するようレ
ンズ部を注形方式等により形成した硬質樹脂板を、軟質
樹脂層の上に紫外線硬化型樹脂の如き適宜な透明接着剤
を介して接着する方式などにより行うことができる。Although the lens layer 6 is generally a convex lens, it may also be a concave lens. The lens layer is made of a transparent hard resin such as epoxy resin or polycarbonate. For example, the lens layer may be formed by placing a hard resin plate, on which the lens part is formed by casting, so as to correspond to the recesses of the insulated metal substrate, on top of the soft resin layer with an appropriate transparent adhesive such as an ultraviolet curable resin. This can be done by a method such as adhesive bonding.
本発明の発光モジュールは、例えば看板等の発光表示装
置、車載用ストップランプ等の照明装置など、種々の目
的の発光体を形成するための発光モジュールとして適用
することができる。The light-emitting module of the present invention can be applied as a light-emitting module for forming a light-emitting body for various purposes, such as a light-emitting display device such as a signboard, a lighting device such as a vehicle-mounted stop lamp, and the like.
実施例１
絶縁金属基板が厚さ５００ｎのアルミニウム板の片面に
ポリイミドからなる厚さ約３０趨の絶縁層を有し、表部
開口径１．５聰、底部径１．１−１深さ０．４ｍｍの逆
台形状の窪みを有するものからなり、回路パターンが厚
さ３５ｕｎ＋の銅箔からなり、発光ダイオードが高さ０
、２ ａｍ 、表面積０．ｌａｄ １活性層のキャリ
ア濃度約１０１７ 原子数／ ｃｉ 、ダブルへテロ構
造の赤色発光体からなり、ボンディングワイヤが直径３
０μ窮の銅線からなり、軟質樹脂層がヤング率９．８ｋ
ｇ ／ ｍ−のシリコーン樹脂からなり、レンズ層がヤ
ング率２３０ｋｇ／ｎ＋−のエポキシ樹脂板（凸レンズ
部の最大厚さ３ＷＩｌ）からなる実施例１に示した仕様
の発光モジュールを４個接続し、かつその接続ブロック
を４列並列させた（発光モジュールの総数１６個）発光
体を作製した。Example 1 An insulated metal substrate has an insulating layer made of polyimide about 30 times thick on one side of an aluminum plate with a thickness of 500 nm, and has an opening diameter of 1.5 mm at the top, a diameter of 1.1-1 mm at the bottom, and a depth of 0. .4mm inverted trapezoidal depression, the circuit pattern is made of 35un+ thick copper foil, and the light emitting diode has a height of 0.
, 2 am, surface area 0. The carrier concentration in the lad 1 active layer is approximately 1017 atoms/ci, and the bonding wire has a diameter of 3.
Made of 0μ copper wire, the soft resin layer has a Young's modulus of 9.8k
Four light-emitting modules having the specifications shown in Example 1, each made of a silicone resin of g/m- and whose lens layer was made of an epoxy resin plate with a Young's modulus of 230 kg/n+- (maximum thickness of the convex lens part 3WIl), were connected. In addition, a light emitting body was produced in which the connection blocks were arranged in four rows in parallel (a total of 16 light emitting modules).
実施例２
軟質樹脂層をヤング率が５ ｋｇ ／ ｍ ｄのシリコ
ーン樹脂で形成したほかは実施例１に準じ発光体を作製
した。Example 2 A light emitter was produced in accordance with Example 1, except that the soft resin layer was formed of a silicone resin having a Young's modulus of 5 kg/m d.
実施例３
軟質樹脂層をヤング率が１ｋｇ、’ａｊのシリコーン樹
脂で形成したほかは実施例１に準じ発光体を作製した。Example 3 A light emitter was produced in the same manner as in Example 1, except that the soft resin layer was formed of a silicone resin with a Young's modulus of 1 kg and 'aj.
比較例
軟質樹脂層に相当する部分をシリコーン樹脂に代えて、
ヤング率が２３０ｋｇ／ｍ−のエポキシ樹脂で形成した
ほかは実施例１に準じ発光体を作製した。Comparative Example The part corresponding to the soft resin layer was replaced with silicone resin,
A light emitter was produced in the same manner as in Example 1, except that it was made of an epoxy resin having a Young's modulus of 230 kg/m.
評価試験 実施例、比較例で得た発光体を下記の試験に供した。Evaluation test The luminescent bodies obtained in Examples and Comparative Examples were subjected to the following tests.
［高温高湿試験］
６０℃、９５％ＲＨ雰囲気下に発光体を発光（電流３０
ｍＡ）させ発光量の変化を調べた。[High temperature and high humidity test] A luminous body was used to emit light in an atmosphere of 60°C and 95% RH (current: 30
mA) to examine changes in luminescence amount.
結果を第１表に示した。The results are shown in Table 1.
第１表
［ヒートショック試験］
高温側（１００℃）１５秒間、低温側５秒間、高温・低
温（昇温・冷却）の切替え所要時間３秒以内のタイムス
ケジュールでＪＩＳ Ｃ７０２１Ａ３の条件に従い５サ
イクル与えたのち、ボンディングワイヤの断線の有無、
及び発光ダイオードの発光状態を調べた。Table 1 [Heat shock test] 5 cycles were given according to the conditions of JIS C7021A3 with a time schedule of 15 seconds on the high temperature side (100°C), 5 seconds on the low temperature side, and the required time for switching between high and low temperatures (heating and cooling) within 3 seconds. After that, check whether the bonding wire is disconnected or not.
And the light emitting state of the light emitting diode was investigated.
結果を第２表に示した。The results are shown in Table 2.
第２表
発明の効果
本発明の発光モジュールによれば、発光ダイオードとボ
ンディングワイヤを軟質樹脂層でカバーし、その上にレ
ンズ層を設けたのでボンディングワイヤが断線し難く、
ヒートシンク型に基づき光度が高いことに加えて、寿命
ないし高光度発光の持続力に優れる発光体を得ることが
できる。Table 2 Effects of the Invention According to the light emitting module of the present invention, since the light emitting diode and the bonding wire are covered with a soft resin layer and the lens layer is provided on top of the soft resin layer, the bonding wire is difficult to break.
Based on the heat sink type, it is possible to obtain a light emitting body that not only has a high luminous intensity but also has an excellent lifespan and long-lasting power of emitting high luminous intensity.
第１図は発光モジュールの実施例の断面図、第２図は回
路パターンの説明図である。
１：絶縁金属基板
１１：金属基板
１２：絶縁層
１３：窪み
２：回路パターン
２１ｚリ一ド部
２２：発光ダイオード設置部
２３：ワイヤボンディング部
３：発光ダイオード
４：ボンディングワイヤ
５：軟質樹脂層
６：レンズ層FIG. 1 is a sectional view of an embodiment of a light emitting module, and FIG. 2 is an explanatory diagram of a circuit pattern. 1: Insulated metal substrate 11: Metal substrate 12: Insulating layer 13: Hollow 2: Circuit pattern 21z Lead part 22: Light emitting diode installation part 23: Wire bonding part 3: Light emitting diode 4: Bonding wire 5: Soft resin layer 6 :Lens layer
Claims (1)
ードが、絶縁金属基板上に絶縁層を介して設けた回路パ
ターンと通電するためのボンディングワイヤと共に軟質
樹脂でカバーされており、その軟質樹脂層の外側に硬質
樹脂からなるレンズ層を有することを特徴とする発光モ
ジュール。 ２、軟質樹脂層がヤング率１０ｋｇ／ｍｍ＾２以下のシ
リコーン樹脂からなる請求項１に記載の発光モジュール
。[Claims] 1. A light emitting diode installed in a recess provided in an insulated metal substrate is covered with a soft resin together with a circuit pattern provided on the insulated metal substrate via an insulating layer and a bonding wire for conducting electricity. 1. A light-emitting module characterized by having a lens layer made of a hard resin on the outside of the soft resin layer. 2. The light emitting module according to claim 1, wherein the soft resin layer is made of a silicone resin having a Young's modulus of 10 kg/mm^2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1256171A JP2668140B2 (en) | 1989-09-30 | 1989-09-30 | Light emitting module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1256171A JP2668140B2 (en) | 1989-09-30 | 1989-09-30 | Light emitting module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03119769A true JPH03119769A (en) | 1991-05-22 |
| JP2668140B2 JP2668140B2 (en) | 1997-10-27 |
Family
ID=17288897
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1256171A Expired - Fee Related JP2668140B2 (en) | 1989-09-30 | 1989-09-30 | Light emitting module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2668140B2 (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973337A (en) * | 1997-08-25 | 1999-10-26 | Motorola, Inc. | Ball grid device with optically transmissive coating |
| GB2343549A (en) * | 1998-11-06 | 2000-05-10 | Hewlett Packard Co | LED with silicone encapsulation |
| JP2004267947A (en) * | 2003-03-10 | 2004-09-30 | Tohoku Ricoh Co Ltd | Photocatalyst device |
| JP2004276383A (en) * | 2003-03-14 | 2004-10-07 | Asahi Rubber:Kk | Method for manufacturing resin lens for semiconductor optical element |
| WO2006077775A1 (en) * | 2005-01-18 | 2006-07-27 | Sharp Kabushiki Kaisha | Optical coupler |
| JP2006269986A (en) * | 2005-03-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| KR100646093B1 (en) * | 2004-12-17 | 2006-11-15 | 엘지이노텍 주식회사 | Light emitting device package |
| JP2007043126A (en) * | 2005-06-30 | 2007-02-15 | Matsushita Electric Works Ltd | Luminaire using led |
| JP2007088092A (en) * | 2005-09-20 | 2007-04-05 | Matsushita Electric Works Ltd | Light-emitting device |
| JP2007329467A (en) * | 2006-05-10 | 2007-12-20 | Hitachi Chem Co Ltd | Optical semiconductor device and its manufacturing method |
| JP2012114474A (en) * | 2006-05-10 | 2012-06-14 | Hitachi Chem Co Ltd | Optical semiconductor device and method for manufacturing the same |
| JP2014216436A (en) * | 2013-04-24 | 2014-11-17 | 東芝ライテック株式会社 | Lighting apparatus |
| JP2017120840A (en) * | 2015-12-28 | 2017-07-06 | シャープ株式会社 | Light emitting element, light emitting element package body, and method of manufacturing light emitting element |
| JP2018060932A (en) * | 2016-10-06 | 2018-04-12 | ローム株式会社 | LED package |
| JP2018195622A (en) * | 2017-05-12 | 2018-12-06 | 日亜化学工業株式会社 | Light-emitting device, and manufacturing method of light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7183587B2 (en) * | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419660A (en) * | 1977-07-15 | 1979-02-14 | Stanley Electric Co Ltd | Method of packaging optical semiconductor resin mold |
| JPS62106488A (en) * | 1985-11-05 | 1987-05-16 | 市光工業株式会社 | Display unit using light emitting diode |
| JPS62196878A (en) * | 1986-02-25 | 1987-08-31 | Koito Mfg Co Ltd | Illumination system |
-
1989
- 1989-09-30 JP JP1256171A patent/JP2668140B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419660A (en) * | 1977-07-15 | 1979-02-14 | Stanley Electric Co Ltd | Method of packaging optical semiconductor resin mold |
| JPS62106488A (en) * | 1985-11-05 | 1987-05-16 | 市光工業株式会社 | Display unit using light emitting diode |
| JPS62196878A (en) * | 1986-02-25 | 1987-08-31 | Koito Mfg Co Ltd | Illumination system |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973337A (en) * | 1997-08-25 | 1999-10-26 | Motorola, Inc. | Ball grid device with optically transmissive coating |
| GB2343549A (en) * | 1998-11-06 | 2000-05-10 | Hewlett Packard Co | LED with silicone encapsulation |
| US6204523B1 (en) | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
| JP2004267947A (en) * | 2003-03-10 | 2004-09-30 | Tohoku Ricoh Co Ltd | Photocatalyst device |
| JP2004276383A (en) * | 2003-03-14 | 2004-10-07 | Asahi Rubber:Kk | Method for manufacturing resin lens for semiconductor optical element |
| KR100646093B1 (en) * | 2004-12-17 | 2006-11-15 | 엘지이노텍 주식회사 | Light emitting device package |
| JP2006201226A (en) * | 2005-01-18 | 2006-08-03 | Sharp Corp | Optical coupler |
| WO2006077775A1 (en) * | 2005-01-18 | 2006-07-27 | Sharp Kabushiki Kaisha | Optical coupler |
| JP2006269986A (en) * | 2005-03-25 | 2006-10-05 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| JP2007043126A (en) * | 2005-06-30 | 2007-02-15 | Matsushita Electric Works Ltd | Luminaire using led |
| JP2007088092A (en) * | 2005-09-20 | 2007-04-05 | Matsushita Electric Works Ltd | Light-emitting device |
| JP4556815B2 (en) * | 2005-09-20 | 2010-10-06 | パナソニック電工株式会社 | Light emitting device |
| JP2007329467A (en) * | 2006-05-10 | 2007-12-20 | Hitachi Chem Co Ltd | Optical semiconductor device and its manufacturing method |
| JP2012114474A (en) * | 2006-05-10 | 2012-06-14 | Hitachi Chem Co Ltd | Optical semiconductor device and method for manufacturing the same |
| JP2014216436A (en) * | 2013-04-24 | 2014-11-17 | 東芝ライテック株式会社 | Lighting apparatus |
| JP2017120840A (en) * | 2015-12-28 | 2017-07-06 | シャープ株式会社 | Light emitting element, light emitting element package body, and method of manufacturing light emitting element |
| JP2018060932A (en) * | 2016-10-06 | 2018-04-12 | ローム株式会社 | LED package |
| JP2018195622A (en) * | 2017-05-12 | 2018-12-06 | 日亜化学工業株式会社 | Light-emitting device, and manufacturing method of light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2668140B2 (en) | 1997-10-27 |
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