JPH03113749A - Production of photomask - Google Patents
Production of photomaskInfo
- Publication number
- JPH03113749A JPH03113749A JP24727589A JP24727589A JPH03113749A JP H03113749 A JPH03113749 A JP H03113749A JP 24727589 A JP24727589 A JP 24727589A JP 24727589 A JP24727589 A JP 24727589A JP H03113749 A JPH03113749 A JP H03113749A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- groove
- shielding thin
- light
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 239000010409 thin film Substances 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000010408 film Substances 0.000 abstract description 23
- 239000011521 glass Substances 0.000 abstract description 10
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 4
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 25
- 238000000034 method Methods 0.000 description 24
- 239000011651 chromium Substances 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Moulds For Moulding Plastics Or The Like (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、光露光方式におけるフォトマスクの製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a photomask using a light exposure method.
［従来の技術］
従来、情報記録媒体成形用スタンバ−は、通常特開昭６
１−２８４８４３号公報、実開昭５８−１４１４３５号
公報、光デイスクプロセス技術の要点Ｎｏ５（日本光業
技術センター）に記載されているように製造されている
。[Prior Art] Conventionally, a stub bar for forming information recording media was usually manufactured by Japanese Patent Application Laid-Open No.
It is manufactured as described in Publication No. 1-284843, Japanese Utility Model Application Publication No. 141435/1983, and Key Points No. 5 of Optical Disk Process Technology (Nippon Kogyo Technology Center).
具体的に述べると、第３図の（ａ）〜（ｅ）に示すよう
に、まずガラス基板９の表面にフォトレジスト８を塗布
し、この上にトラッキング用溝、情報用ビット等の凹凸
の微細パターン８′を形成することによってガラス原盤
６を得る。Specifically, as shown in FIGS. 3(a) to 3(e), a photoresist 8 is first applied to the surface of a glass substrate 9, and irregularities such as tracking grooves and information bits are formed on this. A glass master disk 6 is obtained by forming a fine pattern 8'.
次に２この表面に導電化膜１１を形成した後電鋳法によ
り金属膜１２を形成させ、これら導電化１１９１１、及
び金属膜１２を一体として同時にガラス原盤６から剥離
させ、情報記録媒体成形用スタンバ−（マザー、マスタ
ー）１３を製造している。Next, after forming a conductive film 11 on this surface, a metal film 12 is formed by electroforming, and the conductive film 11911 and the metal film 12 are simultaneously peeled off from the glass master 6 as a single unit, and are used for forming an information recording medium. Manufactures STAMBER (Mother, Master) 13.
ところで−船釣な電鋳法（Ｅｌｅｃｔｒｏ ｆｏｒｍｉ
ｎｇ）のプロセスは上述した通りであるが、ガラス原盤
６を得るために、トラッキング用溝、情報用ビット等に
相当する凹凸の微細パターン８′の形成は、Ａｒレーザ
ー等のレーザービームを用いるレーザー露光法や公開特
許公報昭６２−１８７１４３に記載されているようなフ
ォトマスクを用いるマスク露光法によって行なわれてい
る。このマスク露光法は大面積の露光を同時に行なうこ
とができるため量産に適した方法である。By the way - Electro formi
ng) process is as described above, but in order to obtain the glass master disk 6, the formation of the uneven fine pattern 8' corresponding to tracking grooves, information bits, etc. is performed using a laser beam such as an Ar laser beam. This is carried out by an exposure method or a mask exposure method using a photomask as described in Japanese Unexamined Patent Publication No. 62-187143. This mask exposure method is suitable for mass production because a large area can be exposed at the same time.
ところてこのフォトマスクの製造工程は通常第２図に示
す工程を有している。即ち、マスク基板１に、Ｃｒ等の
露光光を通過させない遮光性薄膜２を蒸着、スパッタリ
ング等で成膜し、上記薄膜２上にスピンナー等によりフ
ォトレジストを塗布することによりフォトレジスト膜３
を形成する。つぎに上記フォトレジスト膜３を露光、現
像してレジストパターン４を形成する。However, the manufacturing process of this photomask usually includes the steps shown in FIG. That is, a light-shielding thin film 2 made of Cr or the like that does not allow exposure light to pass through is formed on a mask substrate 1 by vapor deposition, sputtering, etc., and a photoresist is applied onto the thin film 2 using a spinner or the like to form a photoresist film 3.
form. Next, the photoresist film 3 is exposed and developed to form a resist pattern 4.
次に上記薄膜２をドライ又はウェットでエッチングし、
最後にフォトレジスト膜３を剥離剤で除去して、マスク
パターン５を有する７オトマスクを形成する。Next, the thin film 2 is dry or wet etched,
Finally, the photoresist film 3 is removed using a stripping agent to form a 7-otomask having a mask pattern 5.
しかし、上述した方法により製造されたフォトマスクで
は、洗浄工程等てマスクパターンの剥離が生ずる為に欠
陥が発生し易いという欠点があった。さらに、Ｃｒ等の
露光光を通過させない薄膜（約１０００程度度の膜厚）
が、密着面に凹凸を形成するため、完全な密着状態で露
光出来ないという欠点もある。一方近年、高密度記録化
に伴いマスクパターンの微細化が要求されている為、露
光面に密着させることができるように遮光部をマスク基
材中に埋込んだフォトマスクが考案されている。しかし
マスク基板上にレジストパターンを形成し、マスク基材
の異方性エッチングを行なった後、遮光性薄膜を成膜し
た場合、第５図（ａ）に示すようにレジストの側面に遮
光性薄膜が付着し、レジストの剥離後も、レジストの側
面に付着していた遮光性薄膜が残り、フォトマスクの表
面が平面とならず密着露光に適したフォトマスクが得ら
れない。However, the photomask manufactured by the above-described method has the disadvantage that defects are likely to occur because the mask pattern peels off during the cleaning process or the like. Furthermore, a thin film such as Cr that does not allow exposure light to pass through (film thickness of about 1000 degrees)
However, since it forms irregularities on the contact surface, it also has the disadvantage that it cannot be exposed in perfect contact. On the other hand, in recent years, there has been a demand for finer mask patterns as a result of higher density recording, so photomasks have been devised in which a light-shielding portion is embedded in the mask base material so that it can be brought into close contact with the exposed surface. However, when a resist pattern is formed on a mask substrate and a light-shielding thin film is formed after anisotropic etching of the mask base material, the light-shielding thin film is formed on the side of the resist as shown in FIG. adheres to the photomask, and even after the resist is removed, the light-shielding thin film adhering to the side surfaces of the resist remains, and the surface of the photomask does not become flat, making it impossible to obtain a photomask suitable for contact exposure.
そこでこれを解決するために公開特許公報昭６２−２３
１９６０．昭６２−２３１９５９の第４図（ａ）〜（ｆ
）に示すように、マスク基板上にフォトレジストを塗布
しくａ）、フォトレジスト膜を形成した後、露光・現像
を行ない微細パターンを形成する（ｂ）。さらに異方性
エッチングした後（Ｃ）、等方性エッチングを行ない（
ｄ）、エッチング部分にＣ「、Ｔａ等の遮光性薄膜を形
成しくｅ）２次でフォトレジストを除去してフォトマス
クを得る（ｆ）という方法も考えられている。Therefore, in order to solve this problem, published patent publication No. 62-23
1960. Figures 4(a) to (f) of 1986-231959
As shown in ), a photoresist is applied onto a mask substrate (a), and after a photoresist film is formed, exposure and development are performed to form a fine pattern (b). After further anisotropic etching (C), isotropic etching is performed (
Another method has been considered: d) forming a light-shielding thin film of C, Ta, or the like on the etched portion; e) removing the photoresist in a secondary step to obtain a photomask (f).
しかしながら、第４図に示されるように、マスク基板上
にフォトレジストを塗布し、フォトレジスト膜を形成し
た後、露光・現像を行ない、微細なレジストパターンを
形成する。さらに異方性エッチングを行ない、エッチン
グ部分にＣｒ、Ｔａ等の遮光性薄膜を形成することによ
り、フォトマスクを製造すると、工程中に等方性エッチ
ングの工程を含むため、第５図（ｂ）及び（Ｃ）に示さ
れるように、サイドエッチング部分が形成されてしまう
。そのため、次のような欠点があった。However, as shown in FIG. 4, a photoresist is applied onto a mask substrate to form a photoresist film, and then exposed and developed to form a fine resist pattern. If a photomask is manufactured by further performing anisotropic etching and forming a light-shielding thin film of Cr, Ta, etc. in the etched area, the process includes an isotropic etching step, so the photomask shown in FIG. 5(b) As shown in (C), a side etched portion is formed. Therefore, there were the following drawbacks.
（１）密着露光する際に、サイドエッチ部分にフォトレ
ジストが付着しやすく、付着したフォトレジストは洗浄
が困難である。(1) During contact exposure, photoresist tends to adhere to the side etched portions, and the adhered photoresist is difficult to clean.
（２）フォトレジストが付着するため、正確な密着露光
が困難である。又、付着したフォトレジストが、ガラス
基板上のフォトレジスト膜を剥離させ、凹凸の微細パタ
ーンに欠陥を発生させる。(2) Accurate contact exposure is difficult because photoresist adheres. Further, the adhered photoresist peels off the photoresist film on the glass substrate, causing defects in the fine pattern of projections and depressions.
［発明が解決しようとしている問題点］本発明は上記問
題点に鑑みなされたものであって１本発明は微細パター
ンの正確な露光ができ、又長寿命のフォトマスクの製造
方法を提供することを目的とするものである。[Problems to be Solved by the Invention] The present invention has been made in view of the above-mentioned problems.One object of the present invention is to provide a method for manufacturing a photomask that can accurately expose fine patterns and has a long life. The purpose is to
即ち、本発明によれば、サイドエッチング部分が少なく
露光面に密着させたときにフォトレジストの付着が少な
いため、長寿命のフォトマスクを得ることができ、又密
着面に凹凸がないため、高精度のパターンの露光ができ
るフォトマスクを得ることかできるものである。That is, according to the present invention, there is less side-etched part and less photoresist adheres when it is brought into close contact with the exposure surface, so a long-life photomask can be obtained, and since there is no unevenness on the contact surface, it is possible to obtain a photomask with high quality. It is possible to obtain a photomask that can expose a precise pattern.
［問題点を解決するための手段］
即ち本発明のフォトマスクの製造方法は基板にパターン
状に遮光部が埋込まれたフォトマスクの製造方法に於て
基板上にレジストパターンを形成し該基板のエッチング
を行なって溝を形成する工程。該基板の溝形成面に遮光
性薄膜を少なくとも溝が埋まる厚さに形成する工程。次
いで溝部分に形成した遮光性薄膜のエッチングの選択比
を、溝以外の部分に形成した遮光性薄膜の選択比よりも
大きくする工程。次に遮光性薄膜のエッチングを行なっ
て該基板の溝形成面を平面にする工程を有することを大
きくするものである。[Means for Solving the Problems] That is, the method for manufacturing a photomask of the present invention is a method for manufacturing a photomask in which a light shielding portion is embedded in a pattern in a substrate, and a resist pattern is formed on the substrate. The process of forming grooves by etching. A step of forming a light-shielding thin film on the groove-forming surface of the substrate to a thickness that at least fills the grooves. Next, a step of making the etching selectivity of the light-shielding thin film formed in the groove portion larger than the etching selectivity of the light-shielding thin film formed in the portion other than the groove. Next, the method further includes a step of etching the light-shielding thin film to make the groove-forming surface of the substrate flat.
以下、本発明を図を用いて詳細に説明する。Hereinafter, the present invention will be explained in detail using the drawings.
第１図は本発明のフォトマスクの製造方法の１実施態様
を示す工程図である。FIG. 1 is a process diagram showing one embodiment of the photomask manufacturing method of the present invention.
同図において、■は石英またはガラス等からなる透光性
のマスク基板、３はこのマスク基板に凹凸の微細パター
ンを施すためのフォトレジスト膜、４は密着露光又はレ
ーザービーム露光を施し現像することで得られるスパイ
ラル、同心円状又は、ストライプ状のレジストパターン
である。In the figure, ■ is a light-transmitting mask substrate made of quartz or glass, etc., 3 is a photoresist film for forming a fine uneven pattern on this mask substrate, and 4 is a film to be developed by contact exposure or laser beam exposure. This is a spiral, concentric or striped resist pattern obtained by.
２はマスク基板上にスパッタリング、蒸着等の手法で形
成される、Ｃｒ、Ｔａ、Ａｎ等の露光光を通過させない
薄膜、ｌＯは露光光を通過させない薄Ｍ２に、窒素雰囲
気中で、レーザー光を照射することて得られる、露光光
を通過させない窒化薄膜、１４は窒化を施すためのレー
ザー光、５は情報記録媒体成形用スタンパ−等の製作に
用いられるマスクパターンである。2 is a thin film made of Cr, Ta, An, etc. that does not allow the exposure light to pass through, which is formed on a mask substrate by sputtering, vapor deposition, etc., and IO is a thin M2 that does not allow the exposure light to pass through, and is irradiated with laser light in a nitrogen atmosphere. 14 is a laser beam for nitriding, and 5 is a mask pattern used for manufacturing a stamper for forming an information recording medium, etc.
第１図に於てまず工程（ａ）ではマスク基板上にフォト
レジスト膜を形成する。マスク基板の材質としては通常
用いられるものを使用することができるが、例えば石英
件：＝＝千等が挙げられる。In FIG. 1, first in step (a) a photoresist film is formed on a mask substrate. As the material of the mask substrate, commonly used materials can be used, such as quartz.
次に工程（ｂ）に於てレーザーカッティング装置、密着
露光装置等を用いて所定の凹凸のパターン（円心円状、
スパイラル状、ストライプ状）をカッティングし、現像
することにより、トラッキング用溝、情報用ビット等の
レジストパターン４、を形成する。Next, in step (b), a predetermined uneven pattern (concentric, circular,
A resist pattern 4 such as a tracking groove, an information bit, etc. is formed by cutting the resist pattern (spiral shape, stripe shape) and developing it.
工程（Ｃ）てはレジストパターン４の施されていない部
分（マスク基板ｌの露出部分）をエッチングし残留レジ
ストを除去してマスク基板に溝を形成する。In step (C), the portion where the resist pattern 4 is not applied (the exposed portion of the mask substrate 1) is etched to remove the remaining resist and form a groove in the mask substrate.
次に工程（ｄ）では、第２図（ｂ）に示したガラス原盤
６を作成する際に使用する露光光を透過させない遮光性
薄ｌ！Ｉ２をマスク基板の溝形成面に形成する。この遮
光性薄膜２の材料としては例えばＡｆＬ、Ｃｒ、Ｔａ、
Ｔｉ、Ｎｉ。Next, in step (d), a light-shielding thin l! I2 is formed on the groove forming surface of the mask substrate. Examples of the material of this light-shielding thin film 2 include AfL, Cr, Ta,
Ti, Ni.
Ｆｅ等を用いることができ、又その厚さは少なくともマ
スク基板に形成された溝が埋まるような厚さに形成する
のが好ましい。Fe or the like can be used, and it is preferable to form the material to a thickness that at least fills the groove formed in the mask substrate.
次の工程（ｅ）は、マスク基板の溝部に形成されている
遮光性薄膜のエッチングの選択比を大きくする工程であ
る。The next step (e) is a step of increasing the etching selectivity of the light-shielding thin film formed in the groove of the mask substrate.
溝部の遮光性薄！Ｉ２のエッチングの選択比を大きくす
る方法としては、例えば窒素雰囲気中で溝部の遮光性薄
膜にトラッキングをかけながらレーザー光を照射して、
溝部の遮光性薄膜を窒化させることにより可能である。Thin light shielding of the groove! A method of increasing the etching selectivity of I2 is, for example, by irradiating a laser beam while tracking the light-shielding thin film in the groove in a nitrogen atmosphere.
This is possible by nitriding the light-shielding thin film in the groove.
また、真空中で窒素イオンをフォーカスイオンビームに
よりて溝部の遮光性薄膜に注入することによっても同様
の効果が得られる。A similar effect can also be obtained by injecting nitrogen ions into the light-shielding thin film in the groove using a focused ion beam in a vacuum.
最後に、工程（ｆ）において、エッチングを行なうと、
溝部と非溝部の遮光性薄膜でエッチングレートの差があ
るので、溝部の遮光性薄膜１０のみが残り、これをマス
クパターン５とする工程図に示すフォトマスクが得られ
る。Finally, in step (f), when etching is performed,
Since there is a difference in etching rate between the light-shielding thin film in the groove portion and the non-groove portion, only the light-shielding thin film 10 in the groove portion remains, and a photomask shown in the process diagram using this as mask pattern 5 is obtained.
［実施例］ 以下実施例を用いて、本発明を更に詳細に説明する。[Example] The present invention will be explained in more detail below using Examples.
［実施例１］
石英ガラスのマスク基板上に、フオトレジス）１２Ｉ３
を形成した。フォトレジストは商品名ＡＺ１３７０ ；
ヘキストジャバーン製を用い、スピンナー回転速度１１
０００ｒｐ 〜１５００ｒｐｍで、３０００人〜３５０
０人の膜厚を得た。[Example 1] Photoresist) 12I3 was deposited on a quartz glass mask substrate.
was formed. The photoresist has a trade name of AZ1370;
Using Hoechst Javan, spinner rotation speed 11
000rpm to 1500rpm, 3000 to 350
The film thickness of 0 people was obtained.
次いで密着露光装置（商品名ＰＬＡ−５０２ＦＡ 、キ
ャノン■製）を用いて、光カード用基板に形成する幅２
．５ ｐ、ｍ、ピッチ１２ｇｍのストライプ状のトラッ
ク溝のパターンを露光して現像液（商品名ＡＺ−３１２
１１１Ｆ ；ヘキストジャバン製）で現像した。次いで
マスク基板ｌの露出部分をフッ素とフッ化アンモニウム
の混合液（重量比１ニア）でエッチングした後、リムー
バー（商品名ＡＺ−１００へキストジャバン製）で残り
のレジストを剥離することにより幅２．５ ｐ、、ｍ、
ピッチ１２ｐｍ、深さ１．５ ｐ、ｍのストライブ状の
溝をマスク基板に形成した０次いでマスク基板上にクロ
ムを厚さ２ＪＬｍに蒸着して遮光性薄膜とした後、窒素
雰囲気５〜６％中でＡｒレーザー光を溝部にトラッキン
グをかけながら溝部のクロム膜に照射して、溝部に形成
したクロム膜を窒化した。Next, using a contact exposure device (product name PLA-502FA, manufactured by Canon ■), a width 2 is formed on the optical card substrate.
．． 5 Expose a pattern of striped track grooves of p, m, pitch 12gm and apply a developer (product name: AZ-312).
111F (manufactured by Hoechst Java). Next, the exposed portion of the mask substrate l is etched with a mixed solution of fluorine and ammonium fluoride (weight ratio: 1), and the remaining resist is peeled off with a remover (product name: AZ-100 manufactured by Hequist Javan) to form a width of 2. .5 p,,m,
Striped grooves with a pitch of 12 pm and a depth of 1.5 pm and 1.5 m were formed on the mask substrate. Next, chromium was vapor deposited on the mask substrate to a thickness of 2 JLm to form a light-shielding thin film, and then a nitrogen atmosphere was applied for 5 to 6 pm. %, the chromium film formed in the groove was nitrided by irradiating the chromium film in the groove with an Ar laser beam while tracking the groove.
次いで、クロムのエッチング液（硝酸セリウム第２アン
モニウム：過塩素ｍ：水＝ １７：５：２０）でエッチ
ングを行なって非溝部のクロム膜を除去したところ１表
面が平面で遮光部にサイドエッチングのないフォトマス
クを得た。Next, the chromium film in the non-grooved areas was removed by etching with a chromium etchant (ceric ammonium nitrate:perchlorine m:water = 17:5:20).The surface was flat and side etching was performed on the light shielding area. Got no photomask.
［発明の効果］
以上の説明から明らかなように、本発明のフォトマスク
の製造方法によれば、次のような顕著な効果を奏するこ
とができる。[Effects of the Invention] As is clear from the above description, the method for manufacturing a photomask of the present invention can provide the following remarkable effects.
（１）マスクパターンの剥離が発生し難く、信頼性の高
い長寿命なフォトマスクを提供することができる。(1) It is possible to provide a highly reliable and long-life photomask in which the mask pattern does not easily peel off.
又、Ｃｒ等の露光光を通過させない薄膜が密着面に凹凸
を形成しないため、完全な密着状態で露光ができる。Furthermore, since the thin film, such as Cr, which does not allow the exposure light to pass through does not form irregularities on the contact surface, exposure can be performed in a completely contact state.
（２）サイドエッチ部分が発生しないため、密着露光す
る際にサイドエッチ部分にフォトレジストが付着するこ
とがなく、洗浄が容易である。(2) Since side etched portions are not generated, photoresist does not adhere to the side etched portions during close exposure, and cleaning is easy.
又、サイドエッチ部にフォトレジストが付着することが
原因で、起こるガラス基板上のフォトレジスト膜の剥離
がなくなり、凹凸の微細パターンに欠陥を発生させるお
それがない。Moreover, the peeling of the photoresist film on the glass substrate, which occurs due to the adhesion of the photoresist to the side etched portions, is eliminated, and there is no risk of defects occurring in the fine pattern of projections and depressions.
第１図は本発明のフォトマスクの製造方法を示す工程説
明図である。
第２図は従来のフォトマスクの製造工程を示す説明図、
第３図は電鋳法による情報記録媒体用基板成形用スタン
バ−の製造方法を示す工程説明図。
第４図は従来のフォトマスクの製造方法を示す工程説明
図、
第５図は従来の製造方法で作成されたフォトマスクの断
面図である。
１：マスク基板
２：遮光性薄膜
３：フォトレジスト膜
４ニレジストパターン
５：マスクパターン
６：ガラス原盤
７：サイドエッチ部
８：フォトレジスト
８′ ：凹凸の微細パターン
９ニガラス基板
ｌｌ：導電化膜
１２：金属膜
１３：情報記録媒体成形用スタンバ−
１４：レーザ光
笑２０FIG. 1 is a process explanatory diagram showing a method for manufacturing a photomask according to the present invention. FIG. 2 is an explanatory diagram showing a conventional photomask manufacturing process, and FIG. 3 is a process explanatory diagram showing a manufacturing method of a stand bar for forming a substrate for an information recording medium by electroforming. FIG. 4 is a process explanatory diagram showing a conventional method of manufacturing a photomask, and FIG. 5 is a cross-sectional view of a photomask manufactured by the conventional manufacturing method. 1: Mask substrate 2: Light-shielding thin film 3: Photoresist film 4 Resist pattern 5: Mask pattern 6: Glass master 7: Side etched portion 8: Photoresist 8': Fine pattern of unevenness 9 Glass substrate 11: Conductive film 12: Metal film 13: Stun bar for forming information recording medium 14: Laser light 20
Claims (2)
スクの製造方法に於て基板上にレ ジストパターンを形成し該基板のエッチン グを行なって溝を形成する工程、 該基板の溝形成面に遮光性薄膜を少なく とも溝が埋まる厚さに形成する工程、 次いで溝部分に形成した遮光性薄膜のエ ッチングの選択比を、溝以外の部分に形成 した遮光性薄膜の選択比により大きくする 工程、 次に遮光性薄膜のエッチングを行なって 該基板の溝形成面を平面にする工程を有す ることを特徴とするフォトマスクの製造方 法。(1) A step of forming a resist pattern on a substrate and etching the substrate to form a groove in a method of manufacturing a photomask in which a light shielding portion is embedded in a pattern in a substrate, a groove forming surface of the substrate a step of forming a light-shielding thin film to a thickness that at least fills the groove; a step of increasing the etching selectivity of the light-shielding thin film formed in the groove portion by the etching selectivity of the light-shielding thin film formed in areas other than the groove; 1. A method of manufacturing a photomask, comprising the step of etching a light-shielding thin film to make the groove-forming surface of the substrate flat.
くする請求項１のフォトマスクの 製造方法。(2) The photomask manufacturing method according to claim 1, wherein the light-shielding thin film in the groove portion is nitrided to increase the selectivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24727589A JPH03113749A (en) | 1989-09-22 | 1989-09-22 | Production of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24727589A JPH03113749A (en) | 1989-09-22 | 1989-09-22 | Production of photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03113749A true JPH03113749A (en) | 1991-05-15 |
Family
ID=17161043
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24727589A Pending JPH03113749A (en) | 1989-09-22 | 1989-09-22 | Production of photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03113749A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100468856B1 (en) * | 2002-11-18 | 2005-01-29 | 삼성전자주식회사 | Optical recording medium with phase transition layer and manufacturing method thereof |
| JP2006297544A (en) * | 2005-04-20 | 2006-11-02 | Makita Corp | Power tool |
-
1989
- 1989-09-22 JP JP24727589A patent/JPH03113749A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100468856B1 (en) * | 2002-11-18 | 2005-01-29 | 삼성전자주식회사 | Optical recording medium with phase transition layer and manufacturing method thereof |
| JP2006297544A (en) * | 2005-04-20 | 2006-11-02 | Makita Corp | Power tool |
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