JPH03100178A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH03100178A JPH03100178A JP23733389A JP23733389A JPH03100178A JP H03100178 A JPH03100178 A JP H03100178A JP 23733389 A JP23733389 A JP 23733389A JP 23733389 A JP23733389 A JP 23733389A JP H03100178 A JPH03100178 A JP H03100178A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- generated
- microwaves
- film
- radicals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 18
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000002994 raw material Substances 0.000 abstract description 4
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 15
- 108091008695 photoreceptors Proteins 0.000 description 14
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 10
- 239000011241 protective layer Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
電子写真感光体の表面保護層等に使用される高緻密性の
炭素含有水素化アモルファスシリコン膜を形成する薄膜
形成装置に関し、
より緻密な炭素含有水素化アモルファスシリコン膜を安
定して形成できるようにすることを目的とし、
２つ以上のプラズマ発生炉に供給されるマイクロ波によ
り、該各プラズマ発生炉に導入される水素ガスを分解し
プラズマ化することによって発生する水素ラジカルをそ
れぞれ異なる方向から基体又は堆積空間へ送り込んで該
基体に高緻密性の炭素含有水素化アモルファスシリコン
膜を形成する薄膜形成装置において、前記各プラズマ発
生炉へマイクロ波を供給するための１つのマイクロ波発
振器を設けるとともに、前記マイクロ波発振器で発生す
るマイクロ波を前記各プラズマ発生炉に分配する１つの
マイクロ波分配器を設けた構成とする。[Detailed Description of the Invention] [Summary] Regarding a thin film forming apparatus for forming a highly dense carbon-containing hydrogenated amorphous silicon film used as a surface protective layer of an electrophotographic photoreceptor, etc. The purpose is to stably form an amorphous silicon film, and the hydrogen gas introduced into each plasma generation furnace is decomposed and turned into plasma by microwaves supplied to two or more plasma generation furnaces. In a thin film forming apparatus for forming a highly dense carbon-containing hydrogenated amorphous silicon film on a substrate by feeding hydrogen radicals generated by the above from different directions into a substrate or a deposition space, microwaves are supplied to each of the plasma generating furnaces. In addition, one microwave oscillator is provided for the plasma generation, and one microwave distributor is provided for distributing the microwaves generated by the microwave oscillator to each of the plasma generation furnaces.
本発明は電子写真感光体の表面保護層等に使用される高
緻密性の炭素含有水素化アモルファスシリコン膜を形成
する薄膜形成装置に関するものである。The present invention relates to a thin film forming apparatus for forming a highly dense carbon-containing hydrogenated amorphous silicon film used as a surface protective layer of an electrophotographic photoreceptor.
電子写真感光体の材料として、水素化アモルファスシリ
コン（以下、ａ−Ｓｔ：Ｈ）は、耐久性、無公害、光感
度の点で従来のＳｅｉ光体に代わるものとして有望視さ
れている。As a material for electrophotographic photoreceptors, hydrogenated amorphous silicon (hereinafter referred to as a-St:H) is seen as a promising alternative to conventional Sei photoreceptors in terms of durability, non-pollution, and photosensitivity.
第３図はアモルファスシリコン感光体（以下、ａ−３ｉ
悪感光）構成図で、ａ−Ｓｔ感光体１０１は、基体１０
２上に、ブロッキング層（ボロン高ドープのａ−５ｉ
： Ｈ） １０３．感光層（ボロン低ドープのａ−Ｓｔ
： Ｈ） １０４．表面保護層（炭素含有のａ−５ｉ
：Ｈ９以下ａ−５ｆＣ：Ｈ） １０５を順次形成して成
る。Figure 3 shows an amorphous silicon photoreceptor (hereinafter referred to as a-3i).
In the block diagram, the a-St photoreceptor 101 is connected to the base 10.
2, a blocking layer (highly boron doped a-5i
:H) 103. Photosensitive layer (low boron doped a-St
:H) 104. Surface protective layer (carbon-containing a-5i
:H9 or less a-5fC:H) 105 are sequentially formed.
表面保護層１０５は、表面から光導電性を持つ感光層１
０４へのキャリア注入を防ぐために、絶縁性、透光性に
優れていることが必要である。従来用いられてきたａ
５ｌｌ−Ｘ Ｃ１ｌ ： Ｈ（主にχく０．４）は
、表面保護層として十分な硬度と透光性と絶縁性とを持
っているが、この膜を使用したａ−３ｉ悪感光は、高温
高温（例えば３５°Ｃ，８０％ＲＨ）中で長期使用時に
画像がぼやける現像（以下「像流れ」）が起きるという
欠点を有している。この原因に関しては、本出願人によ
り既に提案された特願昭６３−５８２１４号（昭和６３
年３月１４日出１１ｉ１１）に詳しく記されている。こ
こから分かるように、高炭素含有にして表面のＳｉを少
なくすることにより、Ｓｉ関連の吸着（Ｓｉ−ＯＨの増
加）。The surface protective layer 105 is a photosensitive layer 1 having photoconductivity from the surface.
In order to prevent carrier injection into 04, it is necessary to have excellent insulation and light transmission properties. Traditionally used a
5ll-X C1l: H (mainly χ 0.4) has sufficient hardness, translucency, and insulation properties as a surface protective layer, but a-3i photosensitive film using this film is It has the disadvantage that during long-term use at high temperatures (for example, 35° C., 80% RH), development in which the image becomes blurred (hereinafter referred to as "image washing") occurs. Regarding this cause, Japanese Patent Application No. 63-58214 (Showa 63-58214) has already been proposed by the present applicant.
It is described in detail in March 14, 2011, 11i11). As can be seen, by increasing the carbon content and reducing the Si on the surface, Si-related adsorption (increase in Si-OH).
酸化（Ｓｔ −０−Ｓｔの増加）が起きにくくなり、「
像流れ」が防止できる。しかし、あまりに高炭素含有率
にしたａ ５ｉｌ−ｚ Ｃｘ ？ ）ｌ （例えば
Ｘ〉０．８）を用いた表面保護層は、耐湿性に冨んでい
るが、炭素リンチの構造であるため、絶縁性が低下し帯
電能が下がるという欠点を持つ。Oxidation (increase in St -0-St) becomes less likely to occur, and
"Image drift" can be prevented. However, a5il-z Cx with too high carbon content? )l (for example, X>0.8) is highly moisture resistant, but because of its carbon lynch structure, it has the drawbacks of poor insulation and low charging ability.
このため、炭素含有率が０．４≦Ｘ≦０．８で、Ｓｉ関
連の表面吸着、酸化が起こりにくいａ −５ｉＣ：Ｈ膜
が必要となる。For this reason, an a-5iC:H film is required in which the carbon content is 0.4≦X≦0.8 and Si-related surface adsorption and oxidation are difficult to occur.
第４図は従来の高周波（以下ＲＦ）−ＣＶＤ法によるａ
−３ｉＣ：Ｈ膜形成装置の概要図で、図中、１〜４は原
料ガス供給用ボンベであり、例えばボンベ１にはＳｉ、
）１．が、ボンベ２にはＣ，Ｈ，が、ボンベ３にはＨ２
が、ボンベ４にはＡｒがそれぞれ入っている。成膜時に
は、これらのガスを流量調節器５で制御して真空容器６
内へ導（。そして、２枚の対向する電極１．、’７．の
カソード側電極７□にＲＦ電源８により１３．５６ＭＨ
２のＲＦｌｉ力を印加して原料ガスを分解しプラズマを
発生させ、板′状の基体９上に膜を堆積させる。排気は
メカニカルブーストポンプ１０とロータリーポンプ１１
により行われる。このようにして作製されたａ−Ｓｉ、
ＸＣ，。Figure 4 shows a by the conventional radio frequency (hereinafter referred to as RF)-CVD method.
This is a schematic diagram of a -3iC:H film forming apparatus. In the figure, 1 to 4 are cylinders for supplying raw material gases. For example, cylinder 1 includes Si,
)1. However, cylinder 2 has C, H, and cylinder 3 has H2.
However, cylinder 4 contains Ar. During film formation, these gases are controlled by a flow rate controller 5 and transferred to a vacuum chamber 6.
(Then, the cathode side electrode 7□ of the two opposing electrodes 1., '7.
RFli force of 2 is applied to decompose the source gas and generate plasma, thereby depositing a film on the plate-shaped substrate 9. Exhaust is mechanical boost pump 10 and rotary pump 11
This is done by a-Si produced in this way,
XC,.
Ｈ（χ＝ ０．５ ）に３５℃、８０％ＲＨ雰囲気中で
コロナ照射を行ったところ、コロナ照射時間とともニＮ
Ｏ３−、ＣＯ３”−＋ ５ｉ−ｏ■、 Ｈ−ＯＲ＋５ｉ
−０−Ｓｉの吸着、酸化が起きていることが高感度反射
ＦＴ−ＩＲ（ＩＲ−ＲＡＳ）で観測された。このことは
、本出願人により既に提案された特願平１−４３２６９
号（平成元年２月２７日出願）で述べられている。When corona irradiation was performed on H (χ = 0.5) in an atmosphere of 35°C and 80% RH, the difference in N with the corona irradiation time
O3-, CO3”-+ 5i-o■, H-OR+5i
It was observed with high-sensitivity reflection FT-IR (IR-RAS) that adsorption and oxidation of -0-Si occurred. This is reflected in the patent application No. 1-43269 already proposed by the present applicant.
No. (filed on February 27, 1989).
従来のａ −５ｔ悪感光の表面保護層に使用されるａ−
３ｉＣ：Ｈ膜は、このように高湿度中でＳｉ関連の吸着
、酸化を起こし、表面に分極しやすくなる。A- used in the surface protective layer of conventional a-5t photosensitive
The 3iC:H film thus undergoes Si-related adsorption and oxidation in high humidity, making the surface more likely to be polarized.
従って、この膜を表面保ｆｆ１Ｆｉにしたａ −Ｓｔ感
光体を高湿度中で長時間作動させると、水溶性吸着物質
が付き、これを伝って帯電電荷が流れて「像流れ」を起
こすという問題を生じていた。Therefore, when an a-St photoreceptor with a surface retention of ff1Fi is operated for a long time in high humidity, a water-soluble adsorbent adheres to it, and electrostatic charges flow through this, causing "image blurring." was occurring.
第５図はこの点を改良するために使用した水素ラジカル
アシストＲＦ−ＣＶＤ装置の概要図で、該装置の構成２
作用は次の通り（詳しくは特願昭６３〜５８２１４号参
照）である。Figure 5 is a schematic diagram of a hydrogen radical assisted RF-CVD device used to improve this point.
The action is as follows (see Japanese Patent Application Nos. 63-58214 for details).
第５図において、３１はマイクロ波（以下μ波）発振器
で、ここで発生したμ波（２，４５Ｇ）１２）は導波管
３２を通りプラズマ発生炉３３へ導かれる。In FIG. 5, reference numeral 31 denotes a microwave (hereinafter referred to as μ wave) oscillator, and the μ waves (2,45G) 12) generated here are guided to a plasma generation furnace 33 through a waveguide 32.
ここで、ガス導入部３４から入れた水素（Ｈ２）ガス３
５を石英管３６内で分解し、プラズマ化する。そこで発
生した励起水素原子である水素ラジカル３７は、真空容
器３日内の基体３９上に導かれる。一方、原料ガス（５
ｉｚＨｂ 、Ｃ３ＨＩ ）’ ４０は、原料ガス導入部
４１より入れられ、ＲＦ電源４２に直結した電極４３よ
り真空容器３８内へ導かれ、もう一方の電極４４との間
で生じるＲＦプラズマにより分解されて基体３９上にａ
−５ｉＣ：Ｈ膜となって堆積する。この堆積中に上述
の水素ラジカル３７が表面を覆い、膜の緻密性を高める
。４５は基体を加熱するヒータ、４６はガス排気用のポ
ンプである。Here, hydrogen (H2) gas 3 introduced from the gas introduction part 34
5 is decomposed in the quartz tube 36 and turned into plasma. Hydrogen radicals 37, which are excited hydrogen atoms generated there, are guided onto a substrate 39 within three days in a vacuum container. On the other hand, the raw material gas (5
izHb, C3HI)' 40 is introduced from the raw material gas introduction part 41, guided into the vacuum chamber 38 through an electrode 43 directly connected to an RF power source 42, and decomposed by the RF plasma generated between it and the other electrode 44. a on the base 39
-5iC:H film is deposited. During this deposition, the above-mentioned hydrogen radicals 37 cover the surface and increase the density of the film. 45 is a heater for heating the substrate, and 46 is a pump for exhausting gas.
この水素ラジカルアシストＲＦ −ＣＶ Ｄ法テ作製し
たａ−３ｉＣ：Ｈ（１）膜と、従来のＲＦ−ＣＶＤ法で
作製したａ −５ｉＣ： Ｈ（２）膜を高湿度中でコロ
ナ照射したときの表面吸着、酸化の違いをＩＲ−ＲＡＳ
で測定した結果、ａ −５ｉＣ： Ｈ（１）膜はａ −
５ｉＣ： Ｈ（２）膜に比べ５ｉ−０−５ｔ、 Ｓｔ
−ＯＨ，Ｈ−Ｈ等のＳｉ関連の吸着、酸化量が約１７３
となった。これは、膜の構造緻密性が向上したためであ
る。この構造緻密性を測定するためにレーザーラマン分
光測定を行った。この測定で得られるラマンスペクトル
結果において、ａ −５ｉＣ： Ｈ膜ではＴｏ（約４８
８ｃｍ″Ｉ）とＴＡ（約１５０ｃｍ−’）の２つのピー
クが観測される。ＴＯ／ＴＡピーク比はＳｔ結合の対称
性の乱れや構造の乱れを表し、この値が大きい程構造緻
密であることを示している。測定の結果、ａ−５ｉＣ：
Ｈ（２）のＴｏ／ＴＡが１．８であるのに対し、ａ −
３ｉＣ： Ｈ（１）のＴｏ／ＴＡは２．４となっており
、構造緻密であることが判明した。そして、ａ−ＳｉＣ
：Ｈ（１）膜を使用したａ−Ｓｉ感光体は、ａ −５ｉ
Ｃ：Ｈ（２）膜に比べ高温高温中での「像流れ」現像が
少なかった。When the a-3iC:H(1) film prepared using this hydrogen radical-assisted RF-CVD method and the a-5iC:H(2) film prepared using the conventional RF-CVD method were exposed to corona irradiation in high humidity. IR-RAS shows the difference between surface adsorption and oxidation of
As a result of measurement, the a-5iC:H(1) film was a-
5iC: 5i-0-5t, St compared to H(2) film
Si-related adsorption and oxidation amount of -OH, H-H, etc. is approximately 173
It became. This is due to the improved structural density of the film. Laser Raman spectroscopy was performed to measure this structural density. In the Raman spectrum results obtained in this measurement, the a-5iC:H film has To(approximately 48
Two peaks are observed: 8 cm''I) and TA (about 150 cm-').The TO/TA peak ratio represents the disorder of the symmetry of the St bond and the disorder of the structure, and the larger this value is, the denser the structure is. The measurement results show that a-5iC:
To/TA of H(2) is 1.8, whereas a −
The To/TA of 3iC:H(1) was 2.4, which revealed that it had a dense structure. And a-SiC
:A-Si photoreceptor using H(1) film is a-5i
Compared to the C:H(2) film, there was less "image deletion" development at high temperatures.
以上の結果より、水素ラジカルを基体上や堆積空間に供
給することが、ａ −３ｉＣ：Ｈ膜の緻密性を向上させ
「像流れ」を起こしに（（シていることは明らかである
。From the above results, it is clear that supplying hydrogen radicals onto the substrate or into the deposition space improves the density of the a-3iC:H film and causes "image blur."
しかし、「像流れ」に強いａ −５ｉＣ：Ｈ膜を作製す
るのに効果のある従来の水素ラジカルアシストＲＦ−Ｃ
ＶＤ法においては、水素ラジカルが一方向のみから供給
されるため、基体が円筒状の場合、効率良く水素ラジカ
ルが供給されない部分が生じたが、これは、本出願人の
提案した特願平１−２０９６９９号（平成元年８月１５
日提出）の方法により解決した。次にその概要を説明す
る
第６図は特願平１−２０９６９９号の第２図に示された
水素ラジカルアシストＲＦ−ＣＶＤ装置の概要図で、図
中、５１はヒータ５２により加熱される円筒型基体（電
子写真感光体に使用）、５３゜５４は電極である。なお
、第５図と共通の部材には同符号を用いている。本方式
では、図示のように、マイクロ波（μ波）発振器３１と
プラズマ発生炉３３を２つ設け、２方向から水素ラジカ
ル３７を堆積空間５５へ供給する。このため、１方向か
ら水素ラジカル３７を導入する方式に比べ、基体５１上
または堆積空間５５内に水素ラジカルが効率良く供給さ
れる。６１は、円筒型基体５１の縦方向（第６図の紙面
と垂直方向）へ水素ラジカル３７を均一に供給するため
の水素ラジカル導入部である。However, conventional hydrogen radical-assisted RF-C, which is effective in producing a-5iC:H films that are resistant to "image blur",
In the VD method, hydrogen radicals are supplied from only one direction, so when the substrate is cylindrical, there are parts where hydrogen radicals are not efficiently supplied. -209699 (August 15, 1989)
The problem was solved by the method of Next, FIG. 6, which explains the outline thereof, is a schematic diagram of the hydrogen radical assisted RF-CVD apparatus shown in FIG. 2 of Japanese Patent Application No. 1-209699. A mold substrate (used for an electrophotographic photoreceptor), 53° and 54 are electrodes. Note that the same reference numerals are used for the same members as in FIG. In this method, as shown in the figure, two microwave (μ wave) oscillators 31 and two plasma generating furnaces 33 are provided, and hydrogen radicals 37 are supplied to the deposition space 55 from two directions. Therefore, compared to a method in which hydrogen radicals 37 are introduced from one direction, hydrogen radicals are efficiently supplied onto the substrate 51 or into the deposition space 55. Reference numeral 61 denotes a hydrogen radical introducing portion for uniformly supplying the hydrogen radicals 37 in the longitudinal direction of the cylindrical substrate 51 (in the direction perpendicular to the paper surface of FIG. 6).
しかし、この方式による成膜時に２つのμ波発振器３１
の周期がうまく合わないと、反射波が時間変化する現像
が現れ、プラズマに乱れが生じる場合がある。すなわち
、２つのμ波発振器を使い２方向から水素ラジカルを導
入する水素ラジカルアシストＲＦ−ＣＶＤ法では、２つ
の発振器の周期のずれが大きくなると、それぞれの反射
波が大きくなり、プラズマが不安定となるため、長時間
の安定な成膜が行えないといった問題点が生じていた。However, when forming a film using this method, two μ-wave oscillators 31
If the periods of the two do not match well, a phenomenon in which the reflected waves change over time will appear, which may cause disturbances in the plasma. In other words, in the hydrogen radical-assisted RF-CVD method, which uses two μ-wave oscillators and introduces hydrogen radicals from two directions, as the difference between the periods of the two oscillators becomes large, the reflected waves of each become large and the plasma becomes unstable. Therefore, a problem has arisen in that stable film formation cannot be performed for a long time.
また、２つの発振器を持つことから、制御が複雑になっ
たり、装置が高価なものになるといった問題点も生じて
いた。Furthermore, since there are two oscillators, the control becomes complicated and the device becomes expensive.
本発明は、より緻密な炭素含有水素化アモルファスシリ
コン膜を安定して形成することのできる薄膜形成装置を
提供することを目的としている。An object of the present invention is to provide a thin film forming apparatus that can stably form a denser carbon-containing hydrogenated amorphous silicon film.
第１図は本発明の原理説明図で、図中、７１はマイクロ
波分配器である。なお、第６図と共通の部材には同符号
を用いている。FIG. 1 is a diagram explaining the principle of the present invention, and in the figure, 71 is a microwave distributor. Note that the same reference numerals are used for the same members as in FIG. 6.
本図に明らかなように、マイクロ波発振器３１は１つで
、該マイクロ波発振器３１で発生するマイクロ波は、マ
イクロ波分配器７１により、各プラズマ発生炉３３．３
３に分配供給されるようになっている。As is clear from this figure, there is one microwave oscillator 31, and the microwaves generated by the microwave oscillator 31 are distributed to each plasma generating furnace 33.3 by a microwave distributor 71.
It is designed to be distributed and supplied to 3.
本発明では、上記のように、１つのマイクロ波発振器３
１とマイクロ波分配器７１を使うようになっているため
、２つの発振器がある場合に生じたマイクロ波周期のず
れがなくなり、しかも２つ以上の方向から水素ラジカル
３７を導入することができるため、円筒型基体５１の各
部に均一でより緻密なａ−５ｉＣ：膜を形成することが
できる。また、この方式で作製した表面保護層は、表面
のＳｉの反応性が弱まり、高湿度中でのコロナ照射によ
り起こるＳｉ関連の吸着、酸化が減少する。従って、こ
の膜を表面保護層に用いたａ −Ｓｉ感光体は高温高温
中で表面劣化が少な（なり、「像流れ」等の画像劣化が
なくなる。In the present invention, as described above, one microwave oscillator 3
1 and the microwave distributor 71 are used, the shift in the microwave period that occurs when there are two oscillators is eliminated, and hydrogen radicals 37 can be introduced from two or more directions. , a uniform and denser a-5iC: film can be formed on each part of the cylindrical substrate 51. In addition, in the surface protective layer produced by this method, the reactivity of Si on the surface is weakened, and Si-related adsorption and oxidation caused by corona irradiation in high humidity are reduced. Therefore, an a-Si photoreceptor using this film as a surface protective layer has less surface deterioration at high temperatures (thereby eliminating image deterioration such as "image blur").
〔実施例］ 以下、第２図に関連して本発明の詳細な説明する。〔Example] The invention will now be described in detail with reference to FIG.
第２図は本例の薄膜形成装置の概要図で、第１図と共通
の部材には同符号を用いている。図中、７２はアイソレ
ータ、７３はパワーモニタ、７４は整合器である。FIG. 2 is a schematic diagram of the thin film forming apparatus of this example, and the same reference numerals are used for the same members as in FIG. 1. In the figure, 72 is an isolator, 73 is a power monitor, and 74 is a matching box.
基体５１は、外径８０ｍｍの＾ｉ製の円筒状をしており
、加熱用ヒータ５２を含んだ基板ホルダに取り付けられ
て回転しながらａ ＳｉＣ：Ｈの成膜が行われる。成
膜条件の一例をあげると、圧力０．２ｔｏｒｒ、基体温
度２５０°Ｃ，ＲＦパワー１００Ｗ。The base body 51 has a cylindrical shape made of ^i and has an outer diameter of 80 mm, and is attached to a substrate holder including a heating heater 52 to form a SiC:H film while rotating. An example of film forming conditions is a pressure of 0.2 torr, a substrate temperature of 250°C, and an RF power of 100W.
５ｉｚＦ！ｂ ２ＳＣＣ１ｍ、 Ｃｄ１８１０ＳＣＣＩ
Ｉ、 １（ｚ２００ｓｅｃｍ、マイクロ波パワー８００
Ｗである。１つのμ波発振器３１で発生したμ波は、ア
イソレーク７２を通り、μ渡分配器７１で２方向に分れ
、それぞれパワーモニタ７３、整合器７４を通り、各プ
ラズマ発生炉３３へ送られる。Ｈ２の２００ｓｅｃｍは
２方向からそれぞれ１００ＳＣＣＩＩＩずつ供給され、
おのおのプラズマ発生炉３３で分解されて水素ラジカル
３７となり、基体５１に対し両方向から水素ラジカル導
入部６１を通り供給される。5izF! b 2SCC1m, Cd1810SCCI
I, 1 (z200sec, microwave power 800
It is W. The μ-waves generated by one μ-wave oscillator 31 pass through an isolake 72 , are split into two directions by a μ-crossover distributor 71 , pass through a power monitor 73 and a matching box 74 , and are sent to each plasma generation furnace 33 . 200sec of H2 is supplied from 2 directions with 100SCCIII each,
Each of the hydrogen radicals is decomposed in the plasma generating furnace 33 to become hydrogen radicals 37, which are supplied to the base 51 from both directions through the hydrogen radical introduction section 61.
この場合、反射波は、従来の２つのμ波発振器を使う場
合に比べ１／２〜１／３に減少し、周期的に生じていた
プラズマの不安定さは無くなった。このため、長時間の
連続成膜が可能となった。さらに、感光体としての評価
のために、円筒のへ２基体上に、Ｂ高ドープのａ −３
ｔ ： Ｈ膜のブロッキング層を０．５６μｍ、Ｂ低ド
ープのａ −Ｓｔ ： Ｈｌｌｉの感光層を１０μｍ２
本発明の方式によるａ −３ｉＣ：Ｈの表面保護層を０
．１５μｍ順次堆積し、この感光体の試験を行ったとこ
ろ、３５°Ｃ８０％ＲＨ雰囲気中で２時間の連続コロナ
照射後でも、またその後の一晩放置後でも「像流れ」を
起こさないことが分かった。In this case, the reflected waves were reduced to 1/2 to 1/3 compared to the conventional case of using two μ-wave oscillators, and the periodic instability of the plasma was eliminated. Therefore, continuous film formation over a long period of time became possible. Furthermore, for evaluation as a photoreceptor, a highly B-doped a-3
The blocking layer of t:H film is 0.56 μm, and the photosensitive layer of B lightly doped a-St:Hlli is 10 μm2.
The surface protective layer of a-3iC:H according to the method of the present invention is
．． When 15 μm of photoreceptor was deposited sequentially and this photoreceptor was tested, it was found that "image deletion" did not occur even after continuous corona irradiation for 2 hours at 35°C and 80% RH, and even after leaving it overnight. Ta.
以上述べたように、本発明によれば、１つのマイクロ波
発振器で発生するマイクロ波をマイクロ波分配器により
各プラズマ発生炉へ分配供給するようになっているため
、従来の複数のマイクロ波発振器を使う場合に比べてマ
イクロ波プラズマの周期が一致して反射波が減少し、長
時間安定したプラズマが得られる。また、各方向から水
素ラジカルを基体または堆積空間へ効率良（送り込まれ
るため、円筒基体上により緻密なａ −５ｉＣ：Ｈ膜を
形成することが可能となる。このａ −５ｉＣ：Ｈ膜を
表面保護層に使用すると、高性能（耐湿性が優れ、高帯
電能）のａ−３ｔ悪感光を得ることができる。As described above, according to the present invention, the microwaves generated by one microwave oscillator are distributed and supplied to each plasma generation furnace by the microwave distributor, so that the microwaves generated by one microwave oscillator are distributed and supplied to each plasma generation furnace. Compared to when using microwave plasma, the period of microwave plasma matches, the reflected waves are reduced, and stable plasma can be obtained for a long time. In addition, since hydrogen radicals are efficiently fed into the substrate or deposition space from each direction, it is possible to form a denser a-5iC:H film on the cylindrical substrate. When used in the protective layer, high performance (excellent moisture resistance and high charging ability) a-3t bad sensitivity can be obtained.
第１図は本発明の原理説明図、
第２図は本発明の実施例の薄膜形成装置の概要図、
第３図はａ −３ｔ悪感光構成図、
第４図は従来のＲＦ−ＣＶＤ法によるａ −５ｉＣ：Ｈ
膜形成装置の概要図、
第５図は従来の水素ラジカルアシストＲＦ−ＣＶＤ装置
の概要図、
第６図は従来の他の水素ラジカルアシストＲＦ−ＣＶＤ
装置の概要図で、
図中、
３１はマイクロ波発振器、
３３はプラズマ発生炉、
３７は水素ラジカル、
５１は基体、
５５は堆積空間、
７１はマイクロ波分配器である。
本発明の実施例の薄膜形成装置の概要図第２図
０１
ａ−５ｔ感光体構成図
第３図
第４図Fig. 1 is a diagram explaining the principle of the present invention, Fig. 2 is a schematic diagram of a thin film forming apparatus according to an embodiment of the present invention, Fig. 3 is a block diagram of a-3t ill-sensitivity, and Fig. 4 is a conventional RF-CVD method. a-5iC:H
A schematic diagram of a film forming apparatus, Figure 5 is a schematic diagram of a conventional hydrogen radical assisted RF-CVD apparatus, and Figure 6 is a diagram of another conventional hydrogen radical assisted RF-CVD apparatus.
This is a schematic diagram of the apparatus. In the figure, 31 is a microwave oscillator, 33 is a plasma generation furnace, 37 is a hydrogen radical, 51 is a substrate, 55 is a deposition space, and 71 is a microwave distributor. Schematic diagram of a thin film forming apparatus according to an embodiment of the present invention Fig. 2 01 A-5T photoreceptor configuration diagram Fig. 3 Fig. 4
Claims (1)
クロ波により、該各プラズマ発生炉（３３）に導入され
る水素ガスを分解しプラズマ化することによって発生す
る水素ラジカル（３７）を、それぞれ異なる方向から基
体（５１）又は堆積空間（５５）へ送り込んで該基体（
５１）に高緻密性の炭素含有水素化アモルファスシリコ
ン膜を形成する薄膜形成装置において、 前記各プラズマ発生炉（３３）へマイクロ波を供給する
ための１つのマイクロ波発振器（３１）を設けるととも
に、 前記マイクロ波発振器（３１）で発生するマイクロ波を
前記各プラズマ発生炉（３３）に分配する１つのマイク
ロ波分配器（７１）を設けたことを特徴とする薄膜形成
装置。[Claims] Hydrogen radicals generated by decomposing hydrogen gas introduced into each plasma generation furnace (33) and turning it into plasma by microwaves supplied to two or more plasma generation furnaces (33). (37) into the substrate (51) or the deposition space (55) from different directions.
51) in a thin film forming apparatus for forming a highly dense carbon-containing hydrogenated amorphous silicon film, one microwave oscillator (31) is provided for supplying microwaves to each of the plasma generating furnaces (33); A thin film forming apparatus characterized in that one microwave distributor (71) is provided for distributing microwaves generated by the microwave oscillator (31) to each of the plasma generating furnaces (33).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23733389A JPH03100178A (en) | 1989-09-14 | 1989-09-14 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23733389A JPH03100178A (en) | 1989-09-14 | 1989-09-14 | Thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03100178A true JPH03100178A (en) | 1991-04-25 |
Family
ID=17013826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23733389A Pending JPH03100178A (en) | 1989-09-14 | 1989-09-14 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03100178A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810120A (en) * | 1987-01-16 | 1989-03-07 | Nippon I.C.S. Kabushiki Kaisha | Perfecting printer with turnover unit |
| JPH0621027A (en) * | 1991-10-04 | 1994-01-28 | Matsushita Electric Ind Co Ltd | Method for removing damage of material |
| US6383896B1 (en) | 1999-09-16 | 2002-05-07 | Nissan Electric Co., Ltd. | Thin film forming method and thin film forming apparatus |
-
1989
- 1989-09-14 JP JP23733389A patent/JPH03100178A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810120A (en) * | 1987-01-16 | 1989-03-07 | Nippon I.C.S. Kabushiki Kaisha | Perfecting printer with turnover unit |
| JPH0621027A (en) * | 1991-10-04 | 1994-01-28 | Matsushita Electric Ind Co Ltd | Method for removing damage of material |
| US6383896B1 (en) | 1999-09-16 | 2002-05-07 | Nissan Electric Co., Ltd. | Thin film forming method and thin film forming apparatus |
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