JPH0298128A - Formation of semiconductor thin film - Google Patents
Formation of semiconductor thin filmInfo
- Publication number
- JPH0298128A JPH0298128A JP63250341A JP25034188A JPH0298128A JP H0298128 A JPH0298128 A JP H0298128A JP 63250341 A JP63250341 A JP 63250341A JP 25034188 A JP25034188 A JP 25034188A JP H0298128 A JPH0298128 A JP H0298128A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- temperature
- substrate
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 description 14
- 229910006160 GeF4 Inorganic materials 0.000 description 8
- PPMWWXLUCOODDK-UHFFFAOYSA-N tetrafluorogermane Chemical compound F[Ge](F)(F)F PPMWWXLUCOODDK-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 125000001153 fluoro group Chemical group F* 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は電子素子、光学素子等に用いられる半導体薄膜
の形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for forming semiconductor thin films used in electronic devices, optical devices, and the like.
［従来の技術］
従来熱以外のエネルギーを主として用いたプラズマＣＶ
Ｏ等の成膜技術によって形成された電子素子用の薄膜は
、例えば光電変換素子等に用いた場合は、光電特性の光
劣化が大きく、問題になっていた。一方、熱エネルギー
を主として用いた熱ＣＶＯ等の成膜技術によって形成さ
れた薄膜は光劣化が少なく、しかも複雑な表面形状を有
する基板の上にも比較的−様な膜厚で成膜することがで
きる。[Conventional technology] Conventional plasma CV that mainly uses energy other than heat
When a thin film for an electronic device formed by a film forming technique such as O is used for, for example, a photoelectric conversion element, the photoelectric properties of the thin film are significantly deteriorated by light, which has been a problem. On the other hand, thin films formed by film-forming techniques such as thermal CVO that mainly use thermal energy have little photodegradation, and can be formed with relatively uniform film thickness even on substrates with complex surface shapes. Can be done.
［発明が解決しようとする課題Ｊ
従来、アモルファスシリコン太陽電池等の光電変換素子
用の薄膜はモノシラン、ジシラン等のシラン系の化合物
の熱分解で形成すると、光劣化の少ない膜および素子を
得ることができることが知られている。しかし成膜時の
基板温度が実用的な温度範囲としては５００℃に近い温
度を必要とし、このため使用可能な基板の種類にも制限
があり光電変換素子用の薄膜としての膜質も最善のもの
ではなく、改善を必要としていた。しかも、これまで薄
膜の光学ギャップを１．６ｅｖ以下に小さく調節するこ
とは難しかった。[Problem to be solved by the invention J] Conventionally, when thin films for photoelectric conversion elements such as amorphous silicon solar cells are formed by thermal decomposition of silane-based compounds such as monosilane and disilane, films and elements with less photodeterioration can be obtained. is known to be possible. However, the practical temperature range of the substrate temperature during film formation is close to 500°C, which limits the types of substrates that can be used, and the film quality as a thin film for photoelectric conversion elements is also the best. Instead, it needed improvement. Furthermore, until now it has been difficult to adjust the optical gap of a thin film to 1.6 ev or less.
本発明は従来の欠点を解消し、より低温で半導体薄膜を
形成することができ、しかも制御された光学ギャップを
有する薄膜を得ることのできる半導体薄膜の形成方法を
提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for forming a semiconductor thin film that can eliminate the conventional drawbacks, form a semiconductor thin film at a lower temperature, and obtain a thin film having a controlled optical gap.
［課題を解決するための手段］
本発明は、化合物Ｇ１１ＸＦ、Ｈ２（Ｘ≧１．Ｙ≧１゜
２≧０）と化合物Ｓｉ、ＨｖＦｗ（Ｕ≧１．Ｖ≧１゜Ｗ
２Ｏ）とを加熱した基板上に供給し、基板上にＧｅを含
む薄膜を形成することを特徴とする。[Means for Solving the Problems] The present invention provides compounds G11XF, H2 (X≧1.Y≧1゜2≧0) and compounds Si, HvFw (U≧1.V≧1゜W
2O) onto a heated substrate to form a thin film containing Ge on the substrate.
［作 用１
本発明者らは熱エネルギーを主として用いた熱ＣＶＤ等
の半導体薄膜の成膜技術において、シラン系の化合物Ｓ
ｆｕＨｖＦｗ（Ｕ≧１．Ｖ≧１．Ｗ≧０）に、ざらにＧ
ｅのフッ化物またはそのフッ素の一部を水素で置換した
化合物ＧｅｘＦｙＨｚ （ｘ≧１゜Ｙ≧１．Ｚ≧０）を
混合した原料を加熱した基板上に供給し、シラン系のみ
の成膜温度よりも低い温度またはＧ６ｘＦｙ）ｌｘのみ
の成膜温度よりも低い温度で、半導体薄膜を成膜するこ
とができることを着想し確かめた。また、シラン系のみ
又はＧｅｘＦ、）１．のみを原料とした場合、成膜はす
るが、成膜速度が、成膜温度で律速される温度範囲では
これらの化合物を混合した場合は、さらに−層大きな成
膜速度が得られることを確かめた。さらに、本発明者ら
はこれらの化合物の混合比だけではなく、混合比が一定
の時でも成膜時基板温度を変化させることにより、薄膜
の光学ギャップを変化させることができるということを
確かめた。本発明においてはこれらの方法を用いること
によってすぐれた膜質と制御された光学ギャップを有す
る半導体薄膜を低温度で基板上に形成することができる
。[Function 1] The present inventors used a silane-based compound S in a semiconductor thin film forming technology such as thermal CVD that mainly uses thermal energy.
fuHvFw (U≧1.V≧1.W≧0), Zarani G
A raw material mixed with fluoride e or a compound GexFyHz (x≧1゜Y≧1.Z≧0) in which part of the fluorine has been replaced with hydrogen is supplied onto a heated substrate, and the temperature for forming a silane-based film alone is increased. It was conceived and confirmed that a semiconductor thin film can be formed at a temperature lower than that of G6xFy)lx alone. Also, only silane type or GexF,) 1. If these compounds were used as raw materials, a film could be formed, but in the temperature range where the film formation rate is determined by the film formation temperature, it was confirmed that an even greater film formation rate could be obtained when these compounds were mixed. Ta. Furthermore, the present inventors have confirmed that the optical gap of a thin film can be changed not only by changing the mixing ratio of these compounds but also by changing the substrate temperature during film formation even when the mixing ratio is constant. . In the present invention, by using these methods, a semiconductor thin film having excellent film quality and a controlled optical gap can be formed on a substrate at a low temperature.
［実施例１ 以下に本発明の詳細な説明する。[Example 1 The present invention will be explained in detail below.
薄膜の成長には第１図に示すランプ加熱炉を用いた。石
英チャンバ（反応室）１内の基板支持具２上にＳｉＣで
被覆されたカーボンサセプタ３が置かれ、その上に基板
４が載せられる。石英チャンバ１の外周には赤外線また
は白色光ランプ５およびミラー６からなる輻射加熱装置
が設けられ、サセプタ３を加熱し、従って基板４を加熱
することがで籾る。基板４の温度は熱電対７又はパイロ
メータ８によって測定され、さらに温度制御器９および
ランプ電源１０を制御することによって所定の温度に保
つことができる。A lamp heating furnace shown in FIG. 1 was used to grow the thin film. A carbon susceptor 3 coated with SiC is placed on a substrate support 2 in a quartz chamber (reaction chamber) 1, and a substrate 4 is placed thereon. A radiation heating device consisting of an infrared or white light lamp 5 and a mirror 6 is provided around the outer periphery of the quartz chamber 1 to heat the susceptor 3 and thus the substrate 4. The temperature of the substrate 4 is measured by a thermocouple 7 or a pyrometer 8, and can be maintained at a predetermined temperature by controlling a temperature controller 9 and a lamp power supply 10.
まず石英チャンバ１内を、ロータリポンプ１１などの真
空ポンプによって、電磁弁１２および液体窒素トラップ
１３を通して排気する。石英チャンバ１内が所定の真空
度に達したことを真空計１４によって確かめ、基板４を
所定温度まで加熱する。基板４が加熱されると、電磁バ
ルブ１２は閉じられる。First, the inside of the quartz chamber 1 is evacuated through the electromagnetic valve 12 and the liquid nitrogen trap 13 using a vacuum pump such as the rotary pump 11 . It is confirmed by the vacuum gauge 14 that the inside of the quartz chamber 1 has reached a predetermined degree of vacuum, and the substrate 4 is heated to a predetermined temperature. When the substrate 4 is heated, the electromagnetic valve 12 is closed.
Ｇｅのフッカ物またはそのフッ素の一部を水素で置換し
た化合物が配管系Ａから、Ｓｉの水素化物またはその水
素の一部をフッ素で置換された化合物が、配管系Ｂから
それぞれバルブ１５＾、圧力調整バルブも使用可能であ
る。Ge fluoride or a compound in which part of its fluorine has been replaced with hydrogen is supplied from piping system A, and a Si hydride or a compound in which part of its hydrogen has been replaced by fluorine is supplied from piping system B through valves 15^, Pressure regulating valves can also be used.
ＧｅＸＦＹｌｌｚの最も単純な代表としてＧｅＦ４を用
いた場合の実施例を以下に述べる。An example using GeF4 as the simplest representative of GeXFYllz will be described below.
基板としては、薄膜の光学測定、すなわち膜厚、光学ギ
ャップＥ。ｏｐｔの算出および光伝導率の測定のために
は石英基板を、結合水素量の同定のための赤外吸収測定
用およびＧｅとＳｉの組成比を分に半導体薄膜が形成さ
れる。反応後に分解生成される水素およびフッ素および
未反応ガスはガス排出管２１からバルブ２２および圧力
調整バルブ２３を経由して排気され、反応室内の圧力は
所定の値に制御される。As a substrate, optical measurement of thin films, ie film thickness, optical gap E. A quartz substrate is formed for calculating opt and measuring photoconductivity, and a semiconductor thin film is formed for infrared absorption measurement and for determining the composition ratio of Ge and Si to identify the amount of bound hydrogen. Hydrogen and fluorine decomposed and produced after the reaction and unreacted gas are exhausted from the gas exhaust pipe 21 via the valve 22 and the pressure regulating valve 23, and the pressure inside the reaction chamber is controlled to a predetermined value.
ランプ加熱炉は石英管壁の加熱が少な（、従りて薄膜が
主として基板上に堆積するので有利である。しかし、基
板を抵抗加熱型のヒーターで加熱する抵抗加熱炉および
基板を高周波加熱する高周る。Lamp-heated furnaces are advantageous because they heat the quartz tube wall less (and therefore the thin film is deposited primarily on the substrate). Go around high.
第２図はシラン系の化合物としてジシラン５ｉ２１（、
をＧｅＦａとほぼ等量に混合し、反応室内の圧力を１０
０Ｔｏｒｒに制御して成膜した場合の、薄膜の成膜速度
および光学ギャップの成膜時温度依存性を示す、５００
℃より充分低い３２５℃でも膜の成長が観察され、温度
の上昇に伴い成膜温度は増加するが、本実施例の実験条
件では３５０℃以上では成膜速度はほぼ一定となる。一
方、薄膜の光学ギヤツブは、３２５℃の成膜温度では０
．７ｅｖであるが、成膜温度の上昇と共に増加し、４２
５℃の成膜温度では１．３５ｅｖまで増加する。Figure 2 shows disilane 5i21 (,
was mixed with GeFa in approximately equal amounts, and the pressure in the reaction chamber was increased to 10
500, which shows the temperature dependence of the thin film deposition rate and optical gap during film deposition when the film is deposited under 0 Torr control.
Film growth is observed even at 325° C., which is sufficiently lower than 325° C., and the film forming temperature increases as the temperature rises, but under the experimental conditions of this example, the film forming rate remains almost constant above 350° C. On the other hand, thin film optical gears have a temperature of 0 at a film formation temperature of 325°C.
．． 7ev, but it increases as the film forming temperature rises, and 42
At a film formation temperature of 5° C., it increases to 1.35ev.
ＧｅＦ４とジシランの混合比を変えることによって、成
膜温度が一定でも成膜速度または光学ギャップを変化さ
せることができる。さらに反応室内の圧力を変えること
によって、成膜速度を変える合は４７５℃でも成膜しな
かった。ジシランのみを原料とする場合は４５０℃以下
では成膜速度は本実施例でＧｅＦａを混合した場合に比
し著しく小さく、４００℃以下ではほとんど成膜しなか
った。By changing the mixing ratio of GeF4 and disilane, the deposition rate or optical gap can be changed even if the deposition temperature is constant. Further, when the film formation rate was changed by changing the pressure inside the reaction chamber, no film was formed even at 475°C. When only disilane was used as a raw material, the film formation rate was significantly lower at temperatures below 450°C than when GeFa was mixed in this example, and almost no film was formed at temperatures below 400°C.
第３図はＧｅＦ、とＳｉ２Ｈｇとをほぼ等量に混合し、
反応室内の圧力を１０ｔｏｒｒに制御して成膜した場合
の成膜速度と、堆積した膜の光学ギャップの成膜どＧｅ
であり、ＳＩの組成は２％以下であったが、高温（４０
０℃以上）で形成された膜にはより多くのＳｉが含まれ
ている。たとえば４２５℃で成膜された膜には３４％の
Ｓｔが含まれていることがオージェ分光分析で示された
。Figure 3 shows GeF and Si2Hg mixed in almost equal amounts,
The film formation rate when the film was formed by controlling the pressure in the reaction chamber to 10 torr, and the optical gap of the deposited film.
The composition of SI was less than 2%, but at high temperature (40%
A film formed at a temperature of 0° C. or higher contains more Si. For example, Auger spectroscopy showed that a film formed at 425° C. contained 34% St.
従来のアモルファスＳｉ膜の場合は反応温度が高くなる
とＥ。ａｐｔは低下した。第２図の結果は従来例と極だ
った対比を示している。In the case of conventional amorphous Si films, the higher the reaction temperature, the higher the E. apt decreased. The results in Figure 2 show a sharp contrast with the conventional example.
また、未実施例では、ＧｅＦ４のみを原料とする基膜温
度４５０℃以上で成膜速度が再度上昇する傾向がみられ
た。In addition, in the non-example, there was a tendency for the film formation rate to increase again when the base film temperature was 450° C. or higher using only GeF4 as a raw material.
光学ギャップは４００℃前後の成膜温度を境にして高温
側で増加する。この実施例の場合も従来のＳｉ２Ｈ６の
みの成膜と異なり成膜温度上昇に従い光学ギャップの増
加する傾向がみられている。この実施例においても従来
のアモルファスＳｉ膜の熱ＣＶＤと逆の傾向を示してい
る。The optical gap increases on the high temperature side when the film forming temperature is around 400°C. In the case of this example as well, unlike the conventional film formation of only Si2H6, there is a tendency for the optical gap to increase as the film formation temperature increases. This example also shows a tendency opposite to that of conventional thermal CVD of an amorphous Si film.
第４図は成膜温度を３５０℃と４５０℃とに選び、５ｔ
２）１．とＧｅＦ４との流量比を変化させて成膜した場
合の、成膜速度と成膜した膜の光学ギャップの成膜温度
依存性を示す。この場合も、第３図と同様、反応室内の
圧力を１０ｔｏｒｒとした。さらに基板をおく場所によ
るバラツキを小さくするために不活性キャリアガスとし
てＡ「を流した。成膜速度はＳｔ、＋＋６７ＧｅＦ４が
２前後で最高となり、５ｉＪａ／ＧｅＦ４がガスのみに
よる場合よりもさらに低温で成膜が可能であるばかりか
、ＧｅｘＦｙＨｚとＳｉｕＨｖＦｗの流量比又は成膜温
度を設定することにより従来よりも低光学ギャップ域で
光学ギャップの制御を行うことができる。Figure 4 shows the film formation temperature selected at 350°C and 450°C, and 5t
2)1. The dependence of the deposition rate and the optical gap of the deposited film on the deposition temperature when depositing the film by changing the flow rate ratio of GeF4 and GeF4 is shown. In this case as well, the pressure inside the reaction chamber was set to 10 torr, as in FIG. Furthermore, in order to reduce variations depending on where the substrate is placed, A'' was flowed as an inert carrier gas. Not only is it possible to form a film, but by setting the flow rate ratio of GexFyHz and SiuHvFw or the film forming temperature, it is possible to control the optical gap in a lower optical gap range than before.
上記の実施例ではＧ ｅ ｘ Ｆ −ｔ ｔｌ ｚの一
例としてＧｅＦ４を用いたが、Ｇｅ２Ｆ６を用いれば膜
の成長温度範囲は量比５を境にして、それより大きい部
分では流量比の増加に従って光学ギャップの増加がみら
れ、４００℃で成長した膜は１．Ｏｅｖ前後から１．２
ｅｖ以上の値まで増加した。In the above example, GeF4 was used as an example of G e An increase in the optical gap was observed, and the film grown at 400°C was 1. 1.2 from around Oev
It increased to a value higher than ev.
以上の実施例の中で得られた膜の大部分は前にも述べた
ようにアモルファスであったが、成膜速度の小さい膜の
中には微細な結晶化を示している膜もあった。Most of the films obtained in the above examples were amorphous, as mentioned earlier, but some of the films formed at low deposition rates showed fine crystallization. .
以上の実施例で示すように、本発明の成膜方法によれば
従来のシラン系のガス又はＧｅｘＦＹＨ２系のＨにずれ
、Ｓｉ、Ｈ８を用いれば５１２Ｈ６の場合よりわずか低
温側にずれる。As shown in the above examples, according to the film forming method of the present invention, the temperature shifts to the conventional silane-based gas or GexFYH2-based H, and when Si and H8 are used, the temperature shifts slightly to the lower temperature side than in the case of 512H6.
本発明においては、ＧｅＦａ、Ｇｅ２Ｆ６などの６８の
フッ化物またはそのフッ素の一部を水素で置換した化合
物をＳｉの水素化物またはその水素の一部をフッ素で置
換した化合物で還元する。反応温度が低いと（ＧｅＦ４
と５ｔ２Ｈ，の実施例では約３５０℃以下） 、Ｓｉ
が薄膜中にとり込まれ難いためＥ。ｏｐｔは小さく、反
応温度が高いとＳｉが一部薄膜にとり込まれてＥ（ｌｏ
ｐｔが増加すると考えられる。In the present invention, a fluoride of 68 such as GeFa or Ge2F6 or a compound in which a portion of its fluorine is replaced with hydrogen is reduced with a hydride of Si or a compound in which a portion of its hydrogen is replaced with fluorine. If the reaction temperature is low (GeF4
and 5t2H, in the example below about 350°C), Si
E because it is difficult to incorporate into the thin film. opt is small, and if the reaction temperature is high, some Si is incorporated into the thin film and E(lo
It is considered that pt increases.
［発明の効果］
以上説明したように、本発明によればＧｅＸＦｙ）１２
をＳｊｕＦｖｌｌｗで還元してＧｅを含む薄膜を基板上
に形成するので、すぐれた膜質と制御された光学ギャッ
プを有する半導体薄膜を低温度で基板上に形成すること
ができる。[Effect of the invention] As explained above, according to the present invention, GeXFy) 12
Since a thin film containing Ge is formed on a substrate by reducing Ge with SjuFvllw, a semiconductor thin film having excellent film quality and a controlled optical gap can be formed on the substrate at a low temperature.
６・・・ミラー ２０・・・原料導入管、 ２１・・・ガス排出管、 Ａ、Ｂ・・・配管系。6...Mirror 20...raw material introduction pipe, 21...gas exhaust pipe, A, B... Piping system.
指定代理人 工業技術院電子技術総合研究所長第２図お
よび第３図は成膜速度、光学ギャップの成膜温度依存性
を示す特性図、
第４図は成膜速度および光学ギャップの５１２１１６／
ＧｅＦ４流量比依存性を示す特性図である。Designated Agent Director, Electronics Technology Research Institute, Agency of Industrial Science and Technology Figures 2 and 3 are characteristic diagrams showing the film-forming temperature dependence of the film-forming rate and optical gap.
FIG. 3 is a characteristic diagram showing dependence on GeF4 flow rate ratio.
１・・・石英チャンバ（反応室）、 ２・・・基板支持具、 ３・・・サセプタ、 ４・・・基板、 ５・・・ランプ、 底膜速度 光像ギーＩ−ヮア Ａ膜綺幕柩」 （”Ｃ） 第２図 Ａ順■ 光電ギ豪９フ。1...Quartz chamber (reaction chamber), 2... Board support, 3...susceptor, 4... Board, 5...Lamp, Bottom membrane speed Light image gee I-waa A-membrane coffin” (”C) Figure 2 A order ■ Koden Gigo 9f.
Ａ順侍巻扱劫 （°Ｃ）A-order samurai volume treatment (°C)
Claims (1)
≧０）と化合物Ｓｉ＿ＵＨ＿ＶＦ＿Ｗ（Ｕ≧１、Ｖ≧１
、Ｗ≧０）とを加熱した基板上に供給し、該基板上にＧ
ｅを含む薄膜を形成することを特徴とする半導体薄膜の
形成方法。 ２）前記基板の温度が、Ｓｉ＿ＵＨ＿ＶＦ＿Ｗのみまた
はＧｅ＿ＸＦ＿ＹＨ＿Ｚのみでは成膜しない温度である
ことを特徴とする請求項１に記載の半導体薄膜の形成方
法。 ３）薄膜形成時の基板温度により薄膜の光学ギャップを
制御することを特徴とする請求項１に記載の半導体薄膜
の形成方法。 ４）Ｇｅ＿ＸＦ＿ＹＨ＿ＺとＳｉ＿ＵＨ＿ＶＦ＿Ｗの混
合比を変化させることによって薄膜の光学ギャップを制
御することを特徴とする請求項１に記載の半導体薄膜の
形成方法。[Claims] 1) Compound Ge_XF_YH_Z (X≧1, Y≧1, Z
≧0) and the compound Si_UH_VF_W (U≧1, V≧1
, W≧0) on a heated substrate, and G
A method for forming a semiconductor thin film, the method comprising forming a thin film containing e. 2) The method for forming a semiconductor thin film according to claim 1, wherein the temperature of the substrate is such that a film cannot be formed using only Si_UH_VF_W or only Ge_XF_YH_Z. 3) The method for forming a semiconductor thin film according to claim 1, characterized in that the optical gap of the thin film is controlled by the substrate temperature during thin film formation. 4) The method for forming a semiconductor thin film according to claim 1, wherein the optical gap of the thin film is controlled by changing the mixing ratio of Ge_XF_YH_Z and Si_UH_VF_W.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63250341A JPH0298128A (en) | 1988-10-04 | 1988-10-04 | Formation of semiconductor thin film |
| US07/742,101 US5232868A (en) | 1988-10-04 | 1991-08-05 | Method for forming a thin semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63250341A JPH0298128A (en) | 1988-10-04 | 1988-10-04 | Formation of semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0298128A true JPH0298128A (en) | 1990-04-10 |
| JPH0580137B2 JPH0580137B2 (en) | 1993-11-08 |
Family
ID=17206478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63250341A Granted JPH0298128A (en) | 1988-10-04 | 1988-10-04 | Formation of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0298128A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61231718A (en) * | 1985-04-01 | 1986-10-16 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Gas mixture for accumulation of amorphous semiconductor and accumulation method |
| JPS61234029A (en) * | 1985-04-10 | 1986-10-18 | Canon Inc | Forming method for accumulated film |
| JPS61237417A (en) * | 1985-04-12 | 1986-10-22 | Canon Inc | Formation of deposited film |
| JPS61245519A (en) * | 1985-04-23 | 1986-10-31 | Canon Inc | Formation of deposited film |
| JPS61252624A (en) * | 1985-05-01 | 1986-11-10 | Canon Inc | Method of forming deposited film |
-
1988
- 1988-10-04 JP JP63250341A patent/JPH0298128A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61231718A (en) * | 1985-04-01 | 1986-10-16 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Gas mixture for accumulation of amorphous semiconductor and accumulation method |
| JPS61234029A (en) * | 1985-04-10 | 1986-10-18 | Canon Inc | Forming method for accumulated film |
| JPS61237417A (en) * | 1985-04-12 | 1986-10-22 | Canon Inc | Formation of deposited film |
| JPS61245519A (en) * | 1985-04-23 | 1986-10-31 | Canon Inc | Formation of deposited film |
| JPS61252624A (en) * | 1985-05-01 | 1986-11-10 | Canon Inc | Method of forming deposited film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0580137B2 (en) | 1993-11-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4720395A (en) | Low temperature silicon nitride CVD process | |
| JP3581388B2 (en) | Deposited polysilicon film with improved uniformity and apparatus therefor | |
| KR20210117163A (en) | method of depositing epitaxial material, structure formed using the method, and system for performing the method | |
| US4237150A (en) | Method of producing hydrogenated amorphous silicon film | |
| Nagasawa et al. | Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supply | |
| JP2016507001A (en) | Low temperature deposition method for ceramic thin films | |
| JP2556621B2 (en) | Method for forming silicon carbide film | |
| JPH0424430B2 (en) | ||
| US8642376B2 (en) | Methods for depositing a material atop a substrate | |
| US5232868A (en) | Method for forming a thin semiconductor film | |
| JPH0127568B2 (en) | ||
| JP6637095B2 (en) | Low temperature deposition method of ceramic thin film | |
| JPH0298128A (en) | Formation of semiconductor thin film | |
| JPH01252776A (en) | Formation of aluminum film by vapor growth | |
| JP3066819B2 (en) | Thin film manufacturing method | |
| KR100249825B1 (en) | Method of copper chemical vapor deposition using metalorganic precursor | |
| JPH0587171B2 (en) | ||
| JPH07221026A (en) | Method for forming quality semiconductor thin film | |
| JPH02262324A (en) | X-ray transmitting film and its manufacture | |
| JPS6010108B2 (en) | Method for pyrolytically depositing silicon nitride onto a substrate | |
| JP3857446B2 (en) | SiC molded body | |
| JPS6115150B2 (en) | ||
| JPS5957909A (en) | Formation of amorphous silicon film | |
| JPH0462073B2 (en) | ||
| CN117551980A (en) | Two-dimensional transition metal selenide and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |