JPH029180A - Infrared ray detecting device - Google Patents
Infrared ray detecting deviceInfo
- Publication number
- JPH029180A JPH029180A JP63160273A JP16027388A JPH029180A JP H029180 A JPH029180 A JP H029180A JP 63160273 A JP63160273 A JP 63160273A JP 16027388 A JP16027388 A JP 16027388A JP H029180 A JPH029180 A JP H029180A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- electrode
- infrared
- wavelength
- infrared rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000012535 impurity Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000969 carrier Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は赤外線検知素子の構造に関し、特に複数の波
長域、たとえば３〜５μｍ帯、および１０μｍ帯の波長
分離が可能なフォトダイオード・アレイ型の赤外線検知
素子の構造に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to the structure of an infrared sensing element, and in particular to a photodiode array type device capable of wavelength separation in a plurality of wavelength ranges, for example, a 3 to 5 μm band and a 10 μm band. The present invention relates to the structure of an infrared sensing element.
第３図（ａｌは従来のフォトダイオード・アレイ型の赤
外線検知素子の構造を示す平面図、第３図（ｂ）はその
断面図であり、第４図は従来の波長分離が可能な赤外線
検知素子の断面図である。Figure 3 (al is a plan view showing the structure of a conventional photodiode array type infrared detection element, Figure 3 (b) is a cross-sectional view thereof, and Figure 4 is a conventional infrared detection element capable of wavelength separation. FIG. 3 is a cross-sectional view of the element.
図において、１はＣｄＴｅよりなる高抵抗の基板、２は
Ｃｄ、Ｈｇ＋−＋ｃ Ｔｅよりなる半導体層、３は不純
物ドープ層、４はｐｎ接合、５はｐ電極、６はｎ電極、
７は赤外線、８はシッートパス・フィルタである。In the figure, 1 is a high-resistance substrate made of CdTe, 2 is a semiconductor layer made of Cd, Hg+-+cTe, 3 is an impurity doped layer, 4 is a pn junction, 5 is a p electrode, 6 is an n electrode,
7 is an infrared ray, and 8 is a sheet-pass filter.
次に図を用いて従来のフォトダイオード・アレイ型の赤
外線検知素子について説明する。Next, a conventional photodiode array type infrared sensing element will be explained using figures.
Ｃｄｘ Ｈｇ＋−ｘ Ｔ ｅはＩＩ−Ｖｌ族の化合物半
導体で、組成Ｘにより禁制帯幅が変化し、特にＸｌ−０
゜２のものは波長１０μｍ帯の、ｘ ＝０．３のものは
波長３〜５μｍ帯の赤外線検知素子材料として広く利用
されている。Ｃｄ）Ｉ Ｈｇ ＋−ｗ Ｔ ｅを用イた
赤外線検知素子の構造としては、第３図のようなフォト
ダイオ、−ド型のものが公知で、ＣｄＴｅよりなる高抵
抗の基板１上にｐ型のＣｄｏ、ｔ Ｈｇｏ、ｓＴｅより
なる半導体層２を１０〜２０μｍエピタキシャル成長し
、その後、通常の写真製版技術を用いてｎ型の不純物を
ドープし、ｐｎ接合４を形成していた。ｐｎ接合の大き
さは５０μｍ角〜２００μｍ角程度であり、ｐｎ接合の
数（画素数）は３２Ｘ３２画素、あるいはそれ以上の画
素数のものが用いられる。Cdx Hg+-x Te is a II-Vl group compound semiconductor, and the forbidden band width changes depending on the composition
The material with x = 0.3 is widely used as an infrared sensing element material for the wavelength band of 3 to 5 μm. As a structure of an infrared detecting element using Cd) I Hg +-w Te, a photodiode type as shown in FIG. A semiconductor layer 2 made of Cdo, t Hgo, or sTe is epitaxially grown to a thickness of 10 to 20 μm, and then an n-type impurity is doped using ordinary photolithography to form a pn junction 4 . The size of the pn junction is approximately 50 μm square to 200 μm square, and the number of pn junctions (number of pixels) used is 32×32 pixels or more.
このような赤外線検知素子は、これをＳｔの電荷結合素
子（ＣＯＤ）と組合わせてハイブリッド型の固体撮像素
子を作製し、赤外画像追尾装置に利用される。ところで
赤外画像追尾に対する回避策として第５図のように囮の
高温発熱体を放出する方法がある。第５図において９は
目標、１０は囮である。第６図はブランクの放射側から
計算される黒体の放射発散度を示す図で、この図より常
温付近（約３００”Ｋ）の物体も、高温発熱体くたとえ
ば１０００”Ｋ）も波長１０μｍ帯の赤外線を放射して
いることがわかる。従ってＣｄ０．。Such an infrared sensing element is combined with an St charge-coupled device (COD) to produce a hybrid solid-state image sensor, which is used in an infrared image tracking device. By the way, as a workaround for infrared image tracking, there is a method of emitting a decoy high-temperature heating element as shown in FIG. In FIG. 5, 9 is a target and 10 is a decoy. Figure 6 shows the radiant emittance of a blackbody calculated from the radiation side of the blank.This figure shows that objects near room temperature (approximately 300"K) and high-temperature heating objects (e.g. 1000"K) have a wavelength of 10μ. It can be seen that it emits infrared rays in the band. Therefore, Cd0. .
Ｈｇｏ、ｅＴｅから作製した波長１０μｍ帯の赤外線検
知素子を用いた場合、目標９と囮１０の区別をつけるこ
とができなかった。ここで第６図より、たとえば３００
’にの目標では波長５μｍの赤外線強度二波長１０μｍ
の赤外線強度＝１＝３であるのに対し、１０００”Ｋの
囮では波長５μｍの赤外線強度：波長１０μｍ帯の赤外
線強度−１０：１であるので、波長３〜５μｍ帯と波長
１０μｍ帯の赤外線検知素子の出力信号の比をとること
により、目標９と囮１０の区別ができる。When using an infrared detection element with a wavelength of 10 μm made of Hgo or eTe, it was not possible to distinguish between the target 9 and the decoy 10. From Figure 6, for example, 300
The target of
The infrared intensity of the 1000"K decoy is: infrared intensity of 5 μm wavelength: infrared intensity of 10 μm wavelength band - 10:1. The target 9 and the decoy 10 can be distinguished by taking the ratio of the output signals of the detection elements.
そこで波長３〜５μｍ帯と波長１０μｍ帯の赤外線を分
離して検知するために、従来は波長３〜５μｍ帯と波長
１０μｍ帯の２つの赤外線検知素子が併用する方法、可
視のカラーイメージセンサＩＪＬｍ４図のようにショー
トパスフィルタ８を使用して波長分離を行なう方法、あ
るいは第７図に示す波長多重通信用フォトダイオードの
如く、バッファ層を介してｐｎ接合を順次結晶成長によ
り形成した赤外線検知素子を用いる方法が採られていた
。Therefore, in order to separate and detect the infrared rays in the 3-5 μm wavelength band and the 10 μm wavelength band, the conventional method is to use two infrared detection elements in the 3-5 μm wavelength band and the 10 μm wavelength band in combination.Visible color image sensor IJLm4 A method of performing wavelength separation using a short-pass filter 8 as shown in FIG. 7, or an infrared sensing element in which a pn junction is successively formed by crystal growth via a buffer layer, as in the photodiode for wavelength multiplexing communication shown in FIG. The method used was adopted.
第４図のようにショートパスフィルタ８を使用して波長
分離を行なう方法は、Ｃｄｏ、ｚ Ｈｇｏ、ｇＴｅより
なる半導体１ｉｊ２は波長１０μｍに最大感度を有する
が、波長５μｍの赤外光に対してもその約２分の１の感
度を有するので、このようにＣｄｏ、ｚ Ｈｇｏ、ｓ
Ｔｅとフィルタを用いることにより波長分離が可能とな
るものである。The method of performing wavelength separation using a short-pass filter 8 as shown in FIG. has about half the sensitivity, so Cdo, z Hgo, s
Wavelength separation is possible by using Te and a filter.
従来の赤外′！ＦｆＡ検知素子では以上のような方法で
複数の赤外線を検知しているので、２つの赤外線検知素
子が併用する方法では装置が大型で重くなり実用的でな
いという問題点があり、ショートパスフィルタを使用し
て波長分離を行なう方法では波長に比例して干渉膜が厚
くなるため、赤外域のフィルタの形成には多大の時間を
必要とし、又、干渉膜形成中に赤外線検知素子の温度が
上昇し特性が劣化してしまうという問題点があり、バッ
ファ層を介してｐｎ接合を順次結晶成長により形成した
赤外線検知素子を用いる方法ではＣｄ、Ｈｇ、−、Ｔｅ
の導電型はストイキメトリにより制御しているためこの
ような結晶成長によるｐｎ接合形成は難しく、又、第７
図の構造ではアレイ化が困難であるという問題点があっ
た。Conventional infrared′! Since the FfA detection element detects multiple infrared rays using the method described above, the method of using two infrared detection elements together has the problem that the device becomes large and heavy, making it impractical, so a short-pass filter is used. In the method of wavelength separation, the interference film becomes thick in proportion to the wavelength, so it takes a lot of time to form a filter in the infrared region, and the temperature of the infrared sensing element increases during the formation of the interference film. There is a problem that the characteristics deteriorate, and the method using an infrared sensing element in which a pn junction is formed by successive crystal growth via a buffer layer uses Cd, Hg, -, Te.
Since the conductivity type of the seventh
The structure shown in the figure had a problem in that it was difficult to form an array.
この発明は上記のような問題点を解消するためなされた
もので、小型・軽量であるとともに、作製が容易で特性
の良い複数の波長域の赤外線を検知できる赤外′ｆＩ！
Ａ検知素子を得ることを目的とする。This invention was made to solve the above-mentioned problems, and is small and lightweight, easy to manufacture, and capable of detecting infrared rays in multiple wavelength ranges with good characteristics.
The purpose is to obtain a sensing element A.
〔課題を解決するための手段〕
この発明に係る赤外線検知素子は、裏面より赤外線が入
射する赤外線に対し透明な絶縁基板上の全面に形成され
た第１の半導体層と、該第１の半導体層上の所定領域に
形成された該第１の半導体層と同一の導電型を有しかつ
該第１の半導体層より狭い禁制帯幅を有する第２の半導
体層と、該第２の半導体層の表面部分の所定９■域及び
該第２の半導体層が形成された領域以外の上記第１の半
導体層の表面部分の所定領域に形成された、上記第１、
第２の半導体層と異なる導電型の不純物ドープ層とを備
えたものである。[Means for Solving the Problems] An infrared sensing element according to the present invention includes: a first semiconductor layer formed on the entire surface of an insulating substrate that is transparent to infrared rays and in which the infrared rays enter from the back surface; a second semiconductor layer formed in a predetermined region on the layer and having the same conductivity type as the first semiconductor layer and having a narrower forbidden band width than the first semiconductor layer; The first,
It includes a second semiconductor layer and an impurity doped layer of a different conductivity type.
この発明においては、透明な絶縁基板上に第１の半導体
層を形成し、さらに該半導体層上の所定領域に該第１の
半導体層と同一導電型で禁制帯幅の狭い第２の半導体層
を形成して、これら第１゜第２の半導体層の各々にｐｎ
接合を備えた構成としたから、２層の結晶成長により極
めて容易に製造でき、また製造過程において特性の劣化
のない、小型で高性能な波長分離が可能な赤外線検知素
子−を得ることができる。In this invention, a first semiconductor layer is formed on a transparent insulating substrate, and a second semiconductor layer having the same conductivity type as the first semiconductor layer and having a narrow band gap is formed in a predetermined region on the semiconductor layer. A pn layer is formed in each of these first and second semiconductor layers.
Because of the structure with a junction, it is possible to obtain an infrared sensing element that is extremely easy to manufacture by two-layer crystal growth, and that does not deteriorate in characteristics during the manufacturing process and is capable of wavelength separation with a small size and high performance. .
以下、この発明の一実施例を図について説明する。第１
図（ａｌはこの発明の赤外線検知素子の平面図、第１図
（ｂ）はそのＡ−Ａ ’断面図である。第１図において
１はＣｄＴｅよりなる高抵抗の基板、１１はＰ型のＣｄ
６．Ｉ Ｈｇｏ、ｑ Ｔ ８よりなる第１の半導体層、
１２はｐ型のＣｄｏ、ｚ Ｈｇｏ、ｅ Ｔ ６よりなる
第２の半導体層、１３はＮ型の不純物ドープ層、１４は
第１の半導体層におけるＰＮ接合、１５はｎ型の不純物
ドープ層、１６は第２の半導体層におけるｐｎ接合、１
７は共通ｐ電極、１８はＮ［極、１９はｎ１１ｔ極であ
る。An embodiment of the present invention will be described below with reference to the drawings. 1st
Figure (al) is a plan view of the infrared sensing element of the present invention, and Figure 1 (b) is its AA' sectional view. In Figure 1, 1 is a high resistance substrate made of CdTe, 11 is a P-type substrate. Cd
6. a first semiconductor layer consisting of I Hgo, q T 8;
12 is a second semiconductor layer made of p-type Cdo, z Hgo, eT 6, 13 is an N-type impurity doped layer, 14 is a PN junction in the first semiconductor layer, 15 is an n-type impurity doped layer, 16 is a pn junction in the second semiconductor layer, 1
7 is a common p electrode, 18 is an N[pole, and 19 is an n11t pole.
第２図はこの発明の赤外線検知素子中のへテロ接合のバ
ンド図で、第２図（ａ）はｎ型の不純物ドープ層１５と
第２の半導体層１２間のバンド図、第２図（ｂｌはｎ型
の不純物ドープｌ１１５と第２の半導体層１２と第１の
半導体層１１と第２の半導体層１２の間のバンド図、第
２図（Ｃ１はＮ型の不純物ドープ層１３と第１の半導体
層１１と第２の半導体層１２の間のバンド図である。FIG. 2 is a band diagram of the heterojunction in the infrared sensing element of the present invention, FIG. 2(a) is a band diagram between the n-type impurity doped layer 15 and the second semiconductor layer 12, and FIG. bl is a band diagram between the n-type impurity doped layer 115, the second semiconductor layer 12, the first semiconductor layer 11, and the second semiconductor layer 12; FIG. 1 is a band diagram between a first semiconductor layer 11 and a second semiconductor layer 12. FIG.
このような構造の赤外線検知素子に入射した赤外線の内
、波長３〜５μｍ帯のものは禁制帯幅の広い第１の半導
体層１１で吸収され、波長１０μｍ帯のものは第１の半
導体層１１を透過し、禁制帯幅の狭い第２の半導体層１
２吸収される。ｎ電極１９の下の第１の半導体１’ｌｌ
ｌで吸収された波長３〜５μｍ帯の赤外線によって励起
されたキャリアは、第２図（ｂ）に示す経路を通りｎ電
極１９と共通ｐ電極１７の間で検出される。ｎ電極１９
の下の第２の半導体層１２で吸収された波長１０μｍ帯
の赤外線によって励起されたキャリアは、第２図（ａｌ
に示す経路を通りｎ′ｒ！４極１９と共通ｐ電極１７の
間で検出される。Ｎ電極１８の下の第１の半ｍ体層１１
で吸収された波長３〜５μｍ帯の赤外線によって励起さ
れたキャリアは、第２図（Ｃ）に示す経路を通りＮ電極
１８と共通ｐｆｆｉ橿１７の間で検出される。Ｎ電極１
８の下に入射した波長１０μｍ帯の赤外光は第１の半導
体層１１を透過し検出されない。Of the infrared rays incident on the infrared sensing element having such a structure, those in the wavelength range of 3 to 5 μm are absorbed by the first semiconductor layer 11, which has a wide forbidden band width, and those in the wavelength band of 10 μm are absorbed by the first semiconductor layer 11. The second semiconductor layer 1 is transparent and has a narrow forbidden band width.
2 is absorbed. First semiconductor 1'll under the n-electrode 19
Carriers excited by the infrared rays in the wavelength band of 3 to 5 μm absorbed by the carriers are detected between the n-electrode 19 and the common p-electrode 17 through the path shown in FIG. 2(b). n-electrode 19
The carriers excited by the infrared rays in the 10 μm wavelength band absorbed by the second semiconductor layer 12 under the
Follow the route shown in n'r! It is detected between the quadrupole 19 and the common p-electrode 17. First half-layer 11 under N electrode 18
Carriers excited by the infrared rays in the 3-5 μm wavelength band absorbed by the carriers are detected between the N electrode 18 and the common PFFI rod 17 through the path shown in FIG. 2(C). N electrode 1
Infrared light with a wavelength of 10 μm that is incident below 8 is transmitted through the first semiconductor layer 11 and is not detected.
以上のことがらｎ電極１９の下では従来の赤外線検知素
子と同様、波長１０μｍ帯と波長３〜５μｍ帯の赤外線
が検出され、Ｎ電極１８の下では波長３〜５μｍ帯の赤
外線のみが検出されることになる。As described above, under the N-electrode 19, infrared rays in the 10 μm wavelength band and in the 3-5 μm wavelength band are detected, as with conventional infrared sensing elements, and under the N-electrode 18, only infrared rays in the 3-5 μm wavelength band are detected. That will happen.
従って本実施例の赤外線検知素子を用いれば、赤外画像
を得ると同時に、波長３〜５μｍ帯の赤外線と波長１０
μｍ帯の赤外線の強度の比を得ることができ、目標の識
別能力が大幅に向上する。Therefore, if the infrared sensing element of this embodiment is used, at the same time an infrared image can be obtained, an infrared image with a wavelength of 3 to 5 μm and an infrared image with a wavelength of 10 μm can be obtained.
It is possible to obtain the intensity ratio of infrared rays in the μm band, and the target identification ability is greatly improved.
以上のように、この発明によれば赤外線検出素子におい
て、透明な絶８３基板上に第１の半導体層を形成し、さ
らに該半導体層上の所定２１域に該第１の半導体層と同
一導電型で禁制帯幅の狭い第２の半導体層を形成して、
これら第１．第２の半導体層の各々にｐｎ接合を備えた
構成としたから、２層の結晶成長により極めて容易に製
造でき、また製造過程において特性の劣化のない、小型
で高性能な波長分離が可能な赤外線検知素子を得ること
ができる効果がある。As described above, in the infrared detecting element according to the present invention, a first semiconductor layer is formed on a transparent substrate, and a predetermined area on the semiconductor layer has the same conductivity as the first semiconductor layer. forming a second semiconductor layer with a narrow forbidden band width in a mold;
These first. Since each of the second semiconductor layers has a pn junction, it is extremely easy to manufacture by growing two-layer crystals, and it is possible to perform compact and high-performance wavelength separation without deterioration of characteristics during the manufacturing process. This has the effect of making it possible to obtain an infrared sensing element.
第１図［ａ）はこの発明の一実施例による赤外線検知素
子の構造を示す平面図、第１図（ｂ）は第１図（ａｌの
Ａ−Ａ ’断面図、第２図は本発明の詳細な説明するた
めのバンド図、第３図（ａ）は従来の赤外線検知素子の
構造を示す平面図、第３図（′ｂ）は第３図（ａｌの断
面図、第４図は従来の波長分離が可能な赤外線検知素子
の断面図、第５図は赤外画像追尾に対する回避策を示す
図、第６図は黒体の放射発散度を示す図、第７図は波長
多重通信用フォトダイオードを示す図である。
１は高抵抗の基板、７は赤外線、１１は第１の半導体層
、１２は第２の半導体層、１３はＮ型不純物ドープ層、
１４はＰＮ接合、１５はｎ型不純物ドープ層、１６はｐ
ｎ接合、１７は共通ｐ電極、１８はＮｌｊ、１９はｎ１
１極。
なお図中同一符号は同−又は相当部分を示す。Fig. 1 [a] is a plan view showing the structure of an infrared detection element according to an embodiment of the present invention, Fig. 1 (b) is a sectional view taken along line A-A' of Fig. 3(a) is a plan view showing the structure of a conventional infrared sensing element, FIG. 3('b) is a sectional view of FIG. A cross-sectional view of a conventional infrared sensing element capable of wavelength separation, Fig. 5 is a diagram showing a workaround for infrared image tracking, Fig. 6 is a diagram showing the radiant emittance of a black body, and Fig. 7 is a diagram showing wavelength division multiplexing communication. 1 is a diagram showing a photodiode for use. 1 is a high-resistance substrate, 7 is an infrared ray, 11 is a first semiconductor layer, 12 is a second semiconductor layer, 13 is an N-type impurity doped layer,
14 is a PN junction, 15 is an n-type impurity doped layer, and 16 is a p-n junction.
n junction, 17 is common p electrode, 18 is Nlj, 19 is n1
1 pole. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
おいて、 その裏面より赤外線が入射する赤外線に対し透明な絶縁
基板と 該絶縁基板上の全面に形成された第１の半導体層と、 該第１の半導体層上の所定領域に形成された該第１の半
導体層と同一の導電型を有しかつ該第１の半導体層より
狭い禁制帯幅を有する第２の半導体層と、 該第２の半導体層の表面部分の所定領域及び該第２の半
導体層が形成された領域以外の上記第１の半導体層の表
面部分の所定領域に形成された、上記第１、第２の半導
体層と異なる導電型の不純物ドープ層とを備えたことを
特徴とする赤外線検知素子。(1) A photodiode array type infrared sensing element, comprising an insulating substrate that is transparent to infrared rays that enters from the back surface thereof, a first semiconductor layer formed on the entire surface of the insulating substrate, and the first semiconductor layer. a second semiconductor layer formed in a predetermined region on the semiconductor layer and having the same conductivity type as the first semiconductor layer and having a narrower forbidden band width than the first semiconductor layer; A conductive material different from the first and second semiconductor layers formed in a predetermined region of the surface portion of the layer and a predetermined region of the surface portion of the first semiconductor layer other than the region where the second semiconductor layer is formed. An infrared sensing element characterized by comprising a type impurity doped layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63160273A JPH029180A (en) | 1988-06-28 | 1988-06-28 | Infrared ray detecting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63160273A JPH029180A (en) | 1988-06-28 | 1988-06-28 | Infrared ray detecting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH029180A true JPH029180A (en) | 1990-01-12 |
Family
ID=15711431
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63160273A Pending JPH029180A (en) | 1988-06-28 | 1988-06-28 | Infrared ray detecting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH029180A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115295A (en) * | 1989-10-31 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
-
1988
- 1988-06-28 JP JP63160273A patent/JPH029180A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115295A (en) * | 1989-10-31 | 1992-05-19 | Mitsubishi Denki Kabushiki Kaisha | Photodetector device |
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