JPH0283993A - Manufacture of circuit board - Google Patents
Manufacture of circuit boardInfo
- Publication number
- JPH0283993A JPH0283993A JP23482988A JP23482988A JPH0283993A JP H0283993 A JPH0283993 A JP H0283993A JP 23482988 A JP23482988 A JP 23482988A JP 23482988 A JP23482988 A JP 23482988A JP H0283993 A JPH0283993 A JP H0283993A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- substrate
- aqueous solution
- enamel
- minutes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 210000003298 dental enamel Anatomy 0.000 claims abstract description 17
- 238000007772 electroless plating Methods 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004381 surface treatment Methods 0.000 claims 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910011255 B2O3 Inorganic materials 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 abstract 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- FWFGVMYFCODZRD-UHFFFAOYSA-N oxidanium;hydrogen sulfate Chemical compound O.OS(O)(=O)=O FWFGVMYFCODZRD-UHFFFAOYSA-N 0.000 abstract 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000007788 liquid Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000007788 roughening Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 150000004673 fluoride salts Chemical class 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000002351 wastewater Substances 0.000 description 2
- 238000004065 wastewater treatment Methods 0.000 description 2
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- UETQVDZZPKAQIC-UHFFFAOYSA-N chlorane Chemical compound Cl.Cl.Cl.Cl UETQVDZZPKAQIC-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はボウロウ基板を用いた回路基板の製造法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method for manufacturing a circuit board using a bow board.
更に詳しくはホウロウ基板に無電解メッキにより回路を
形成させるに肖り表面の粗面化をはかり、メッキの密着
力を向上させる粗面化方法に関する。More specifically, the present invention relates to a surface roughening method for forming a circuit on an enamel substrate by electroless plating, thereby roughening the surface and improving the adhesion of the plating.
従来、ホウロウ基板に回路を形成するには、金属導体ペ
ーストをスクリーン印１１ｉ１１１．た後、焼付（プる
υ膜回路形成法が採用されていた。Conventionally, in order to form a circuit on an enamel substrate, metal conductor paste is applied to screen marks 11i111. After that, a baking film circuit formation method was used.
しかし厚膜回路形成法では
（１）ファインなパターン形成が困難であり、／１−Ｐ
ｄ、ＡｔＧペーストで最小１５０１１ｍ巾、ＡＵで最小
１００μｍ巾が限度である。However, in the thick film circuit formation method, (1) it is difficult to form fine patterns;
d. For AtG paste, the minimum width is 15011 m, and for AU, the minimum width is 100 μm.
（２）スルーホールの内面の印刷が難しく、多数個では
特に困難である。(2) It is difficult to print the inner surface of the through hole, especially when a large number of through holes are printed.
（３）空気中で焼成するためには貴金属ベーストを使用
するためコスト高になる。(3) Firing in air requires use of a noble metal base, which increases costs.
などの問題点があった。There were problems such as.
この問題点に対し、ホウロウ基板表面にメッキを行なう
方法が提案されている。例えば特開昭５３−５４３８号
公報、特開昭６０
１９５０７８号公報に示されている。これらではホウロ
ウ基板表面の粗面化をｌｙＪ賃はフッ酸、１２者は水酸
化ナトリウム融解液の処理で行っている。To address this problem, a method has been proposed in which the surface of the enamel substrate is plated. For example, it is shown in Japanese Patent Laid-Open No. 53-5438 and Japanese Patent Laid-Open No. 60-195078. In these cases, the surface of the enamel substrate is roughened by treatment with hydrofluoric acid in LYJ, and with a sodium hydroxide melt in case 12.
フッ酸や水酸化ナトリウム融解液を用いると腐食力が強
すぎるため、粗化面の凹凸の制御が困難な［に、表面付
近に脆弱層を形成するため後に施すメッキ膜がこの脆弱
層と共に剥離し、安定的な密６カを＋Ｓすることか困難
であった。またフッ酸や水酸化ナトリウム融解液は取扱
いが危険でもある。When hydrofluoric acid or sodium hydroxide melt is used, the corrosive power is too strong, making it difficult to control the unevenness of the roughened surface.In addition, since a brittle layer is formed near the surface, the plating film applied later may peel off along with this brittle layer. However, it was difficult to make a stable close 6-ka +S. Hydrofluoric acid and sodium hydroxide melts are also dangerous to handle.
これらの問題を解決するものとして、特開昭６２−２３
００８５号公報、特開昭６２２３００８６号、特開昭６
２−２３００８７号公報、特開昭６２−２３００８８号
公報、特開昭６２−２３００８９号公報が提案されてい
る。これらはメッキによる回路形成法で基板とメッキと
の密着力を向上させるためにフッ化ナトリウム、フッ化
アンモニウム、フッ化ホウ承酸などのフッ化物塩水溶液
の中性または中性に近い水溶液で処理するもので′ある
。またＣｒＯ−１−１２３０４水溶液による処理も知ら
れでいる。As a solution to these problems, Japanese Unexamined Patent Publication No. 62-23
Publication No. 0085, JP-A No. 62230086, JP-A No. 6
No. 2-230087, JP-A-62-230088, and JP-A-62-230089 have been proposed. These are treated with a neutral or near-neutral aqueous solution of fluoride salts such as sodium fluoride, ammonium fluoride, and fluoroboric acid in order to improve the adhesion between the board and the plating in the circuit formation method by plating. There is something to do. Furthermore, treatment with a CrO-1-12304 aqueous solution is also known.
フッ化物塩水溶液はフッ酸と同様に、処理液の廃水処理
が困難という問題点がある。Similar to hydrofluoric acid, a fluoride salt aqueous solution has the problem that it is difficult to treat wastewater as a treatment solution.
またＣｒＯ３−Ｈ２Ｓ０４水溶液も、かなり濃厚液であ
ると共にクロムを含有しており、処理液の廃水処理が困
難である。Further, the CrO3-H2S04 aqueous solution is also a fairly concentrated liquid and contains chromium, making it difficult to treat wastewater as a treatment liquid.
本発明の目的は、粗化面の凹凸の制御が容易であり、表
面に脆弱層を形成するおそれがなく、処理液の廃水処理
が容易であると共に、１３ ａ □。The objects of the present invention are to easily control the unevenness of the roughened surface, to eliminate the risk of forming a brittle layer on the surface, to facilitate the wastewater treatment of the treatment liquid, and to achieve 13 a □.
Ｓ ｉ Ｏ、Ｍａｃ、Ｂ２０３をｇむ結晶化カラスに対
して、有効な粗面化を速成フるボウロウ回路基板の製造
法を提供することである。It is an object of the present invention to provide a method for manufacturing a circuit board that quickly and effectively roughens the surface of crystallized glass containing SiO, Mac, and B203.
本発明者らは、前記課題を解決するため説息研究を行っ
た。その結果、Ｂａｄ、Ｓ ｉ０２゜ＭＣｌ０．Ｂ２０
３を主成分とする結晶化ガラスに対して、希酸により短
時間の処理を行うことにより解決しくすることを見い出
し本発明を完成した。The present inventors conducted a breath study to solve the above problem. As a result, Bad, Si02°MCl0. B20
The present invention has been completed by discovering that the problem can be solved by treating crystallized glass containing 3 as the main component with a dilute acid for a short time.
ザなわら本発明は金属コアの表面の絶縁層がｔ３ ａ
Ｏ，Ｓ ｉ Ｏ、Ｍ ＯＯ，Ｂ２Ｏ３を主成分とする結
晶化ガラスからなるホウロウ単板において、該基板を希
酸で処理することにより基板表面の粗面化をはかり、後
に行う無電解メッキの密査力を向上させることを特徴と
する回路基板の製造法である。However, in the present invention, the insulating layer on the surface of the metal core is
In an enamel veneer veneer made of crystallized glass whose main components are O, S i O, M OO, and B2O3, the substrate surface is roughened by treating the substrate with dilute acid, and the surface is roughened for subsequent electroless plating. This is a method of manufacturing a circuit board characterized by improving close inspection ability.
希酸９１１Ｌ理としては、１．５〜２０重量％１」２Ｓ
０４水溶液で３０秒〜１０分間処理するか、１．０〜１
０重量％ＨＮＯ３水溶液で１５秒〜８分闇処理づるか、
あるいは１．５〜２０重量％ＨＣｊｌ水溶液で３０秒〜
１０分間の処理をするかいずれかの方法を採用する。As dilute acid 911L, 1.5 to 20% by weight 1"2S
04 aqueous solution for 30 seconds to 10 minutes, or 1.0 to 1
Darkly treated with 0% by weight HNO3 aqueous solution for 15 seconds to 8 minutes,
Or 30 seconds with 1.5-20% by weight HCjl aqueous solution
Either process for 10 minutes or use one of the following methods.
希酸処理において、ｍ度、時間の下限未満では、基板表
面の粗面化が不十分であり、上限を超えると表面に過度
の凹凸を生じ、また脆弱層を形成するおそれがあり好ま
しくない。In dilute acid treatment, if the lower limit of m degrees and time is less than the lower limit, roughening of the substrate surface will be insufficient, and if the upper limit is exceeded, the surface may become excessively uneven and a brittle layer may be formed, which is not preferable.
ホウロウ基板は、先づアルコール洗浄などの洗浄を行っ
た後、本発明の希１！ｌ！ｌ処理を行い、表面を粗面化
する。水洗複塩化第−錫水溶液等で感受性化＜ ｓｅｎ
ｓｉｔｉｚｉｎｇ ）を、また水洗後塩化パラジウム水
溶液等で活性化（ａｃｔｉＶａｔｉｏｎ）を行った（Ｑ
、無電解メッキ液に浸漬して無電解メッキを行う。The enamel substrate is first cleaned with alcohol or the like, and then cleaned using the method of the present invention. l! l treatment to roughen the surface. Sensitize with water-washed dichloride dichloride aqueous solution, etc.
sitizing), and after washing with water, activation (activation) was performed with a palladium chloride aqueous solution, etc. (Q
, perform electroless plating by immersing it in an electroless plating solution.
その１１体パターン形成用マスキングを行った後、パタ
ーン部以外のエツチングを行って導体バクーンが完成す
る。その他、基板にメッキレジストを形成し、無電解メ
ッキのみで回路を形成づる方法や、基板全面に無電解メ
ッキを行い、メッキレジストを形成し、電気メッキを行
った後、メッキレジストを剥離し、クイック１ツチング
して回路を形成する方法８種々の方法が考えられる。After performing masking for forming the 11-piece pattern, etching is performed on areas other than the pattern portions to complete the conductor backbone. Other methods include forming a plating resist on the board and forming a circuit using only electroless plating, or applying electroless plating to the entire surface of the board, forming a plating resist, performing electroplating, and then peeling off the plating resist. 8 Methods of forming a circuit by quick fitting 8 Various methods can be considered.
無電解メッキも、絶縁基板面に回路形成を行うための通
常の無電解メッキ液によって行うことができる。Electroless plating can also be performed using an ordinary electroless plating solution for forming circuits on the surface of an insulating substrate.
（実施例）
以下に実施例によって、本発明の詳細な説明するが、本
発明はこの実施例に限定されるものでないことは勿論で
ある。(Example) The present invention will be described in detail below with reference to Examples, but it goes without saying that the present invention is not limited to these Examples.
（実施例１）
ＭａＯ２７ｆＪｆｆｉ％、ＢａＯ３０重伍％、ＢＯ２２
重量％、Ｓｉ０ ２１１呈％の組成を右する結晶化ガ
ラスを用いて作成したホウロウ基板を下記の工程に従っ
て処理し、処理後のり板表面に無電解鋼メッキにより２
ａｎＸ２欄の銅導体パターンを形成した。(Example 1) MaO27fJffi%, BaO30%, BO22
An enamel substrate made using crystallized glass having a composition of 211% by weight and 211% Si0 was treated according to the following steps, and after the treatment, the surface of the plate was plated with electroless steel.
A copper conductor pattern in column anX2 was formed.
■ アルコール洗浄
■ ホウロウ面相面化 ２５℃の２重量％Ｈ２ＳＯ４水
溶液に５分間浸漬
■ 水 洗
■ 感受性化 ３ｎＣｊ ０．２９／ρ水溶液に１
０分間浸漬
■ 水 洗
■ 活性化 ＰｄＣｊ ０．５ｇ／Ｉ水溶液に１０
分間浸漬
■ 水 洗
■ 無電解鋼メッキ ０ＰＣ−７５０（奥野製薬工業■
製、商品名）○ＰＣ−７５０Ａ液１００ｄ、／Ｊ 、０
ＰＣ−７５０Ｓ液１００＃ｌグ／ｆＪ、０ＰＣ−７５０
Ｃ液２Ｉｄ／！Ｊの混合液に３０分間浸）ｄ
■ 水 洗
［株］ 乾 燥
Ｏ２１１＋１Ｘ２ＪＩＩ導体パターン形成用マスキング
を行う。■ Alcohol cleaning ■ Enamel surface phaseization Immersion in 2 wt% H2SO4 aqueous solution at 25℃ for 5 minutes ■ Water washing ■ Sensitization 3nCj 0.29/1 in ρ aqueous solution
Immersed for 0 minutes ■ Washed with water ■ Activated PdCj 0.5 g/I aqueous solution with 10
Soak for minutes■ Wash with water■ Electroless steel plating 0PC-750 (Okuno Pharmaceutical Co., Ltd.■
(product name) ○PC-750A liquid 100d, /J, 0
PC-750S liquid 100#lg/fJ, 0PC-750
C liquid 2Id/! Immerse in the mixed solution of J for 30 minutes) d ■ Water wash [Co., Ltd.] Dry O211+1X2JII Masking for conductor pattern formation is performed.
［株］ パターン部以外の箇所をエツチングする。過硫
酸アン七ン５％水溶液を使用した。[Stock] Etch areas other than the pattern area. A 5% aqueous solution of persulfuric acid was used.
■ 水 洗 ■ 乾燥後、マスキングを除去する。■ Water washing ■ After drying, remove the masking.
上記の手順により作成した２＃１ｌＩＸ２＃ｌＩｌ＋形
状の各導体パターンに０．８８径の錫メッキ軟銅線を゛
ｒ田付し、基板面に垂直に引張って、その荷重を測定し
た。A tin-plated annealed copper wire of 0.88 diameter was attached to each of the 2#1lIX2#lIl+-shaped conductor patterns created by the above procedure, and the load was measured by pulling the wire perpendicularly to the substrate surface.
その結果３ 、９に！Ｊ／ ２＋１１１Ｘ ２＃＆１の
伯を得た。The result was 3 and 9! J/ 2+111X I got a count of 2#&1.
（実施例−２）
次記の工程を除いて、実施例１と同様のホウロウ基板を
用い、同様の工程で無電解Ｎｉメッキを行った。(Example 2) Electroless Ni plating was performed using the same enamel substrate as in Example 1 and the same steps except for the following steps.
（○ホウロウ面粗面化 ８重量％ＨＮＯ３水溶液（２８
℃）に３分間浸潤
■無電解Ｎｉメッキ ブルシューマ（日本カニゼン社製
商品名）無電解
ニッケルメッキ液１５分
間浸漬。(○ Enamel surface roughening 8% by weight HNO3 aqueous solution (28
℃) for 3 minutes■Electroless Ni plating Immersed in Bruschuma (trade name, manufactured by Nippon Kanizen Co., Ltd.) electroless nickel plating solution for 15 minutes.
実施例１の場合と同様に接着強度を測定した結果／Ｉ
、２に’ｊ／２ｍ×２履の値を得た。Results of measuring adhesive strength in the same manner as in Example 1/I
, 2 obtained the value of 'j/2m x 2 shoes.
本発明の方法によれば、ホウロウ基板の粗面化の凹凸の
Ｈｉｌｌ ＩＩＩが容易であり、極めて均一で、−様な
粗面が定常的に得られ、その結果無電解金属メッキ層の
接着強度も極めて大きい。According to the method of the present invention, Hill III of the unevenness of the roughening of the enamel substrate is easily obtained, and an extremely uniform and -like rough surface can be constantly obtained, and as a result, the adhesive strength of the electroless metal plating layer is improved. is also extremely large.
使用する酸は通常使用されている酸であり、濃度も婢い
のでフッ酸や水酸化ナトリウム融解液のような危険性も
なく、また廃水処理が極めて容易である。The acid used is a commonly used acid and its concentration is low, so it is not as dangerous as hydrofluoric acid or sodium hydroxide melt, and wastewater treatment is extremely easy.
Claims (4)
化ガラスからなるホウロウ基板において、該基板を希酸
で処理することにより基板表面の粗面化をはかり、後に
行う無電解メッキの密着力を向上させることを特徴とす
る回路基板の製造法。1. In an enamel substrate in which the insulating layer on the surface of the metal core is made of crystallized glass whose main components are BaO, SiO_2, MgO, and B_2O_3, the substrate surface is roughened by treating the substrate with dilute acid, which is then carried out later. A method for manufacturing a circuit board characterized by improving the adhesion of electroless plating.
０秒〜１０分間表面処理することを特徴とする請求項１
記載の回路基板の製造法。2. 3. Enamel substrate with 1.5-20% by weight sulfuric acid aqueous solution
Claim 1 characterized in that the surface treatment is performed for 0 seconds to 10 minutes.
Method of manufacturing the circuit board described.
５秒〜８分間表面処理することを特徴とする請求項１記
載の回路基板の製造法。3. 1. Enamel substrate with 1.0 to 10% by weight nitric acid aqueous solution
2. The method for manufacturing a circuit board according to claim 1, wherein the surface treatment is performed for 5 seconds to 8 minutes.
０秒〜１０分間表面処理することを特徴とする請求項１
記載の回路基板の製造法。4. The enamel substrate was soaked in a 1.5-20% by weight hydrochloric acid aqueous solution.
Claim 1 characterized in that the surface treatment is performed for 0 seconds to 10 minutes.
Method of manufacturing the circuit board described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23482988A JPH0283993A (en) | 1988-09-21 | 1988-09-21 | Manufacture of circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23482988A JPH0283993A (en) | 1988-09-21 | 1988-09-21 | Manufacture of circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0283993A true JPH0283993A (en) | 1990-03-26 |
Family
ID=16977033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23482988A Pending JPH0283993A (en) | 1988-09-21 | 1988-09-21 | Manufacture of circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0283993A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0848087A (en) * | 1994-08-08 | 1996-02-20 | Techno Roll Kk | Printing device |
| US8455769B2 (en) | 2008-01-30 | 2013-06-04 | Murata Manufacturing Co., Ltd. | Electronic component and method of mounting the same |
-
1988
- 1988-09-21 JP JP23482988A patent/JPH0283993A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0848087A (en) * | 1994-08-08 | 1996-02-20 | Techno Roll Kk | Printing device |
| US8455769B2 (en) | 2008-01-30 | 2013-06-04 | Murata Manufacturing Co., Ltd. | Electronic component and method of mounting the same |
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