JPH0283992A - Distributed feedback type semiconductor laser and distributed reflection type semiconductor laser - Google Patents
Distributed feedback type semiconductor laser and distributed reflection type semiconductor laserInfo
- Publication number
- JPH0283992A JPH0283992A JP23704288A JP23704288A JPH0283992A JP H0283992 A JPH0283992 A JP H0283992A JP 23704288 A JP23704288 A JP 23704288A JP 23704288 A JP23704288 A JP 23704288A JP H0283992 A JPH0283992 A JP H0283992A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- active layer
- distributed
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000005253 cladding Methods 0.000 claims description 18
- 239000000969 carrier Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000002513 implantation Methods 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000005468 ion implantation Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 230000003252 repetitive effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 68
- 238000000034 method Methods 0.000 description 17
- 239000012535 impurity Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、回折格子を具備した半導体レーザに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser equipped with a diffraction grating.
分布（ｉ還型半導体レーザおよび分布反射型半導体レー
ザは、共振器軸内に、一定周期で分布する屈折率ステッ
プを有し、その屈折率ステップでの光の回折による帰還
または反射で発振するため、発振波長に選択性があり、
単一軸モードに発振する。通常、この屈折率ステップは
、活性層に近接する光ガイド層またはクラッド層に凹凸
（以下、グレーティングと称する）を設けることにより
得られる。第７図に、従来の分布帰還型半導体レーザの
一例、第８図に、従来の分布反射型レーザの一例を示す
。従来の分布帰還型半導体レーザおよび分布反射型半導
体レーザの製造方法は、まず、１回目の成長でグレーテ
ィングを設けるべき光ガイド層５７．５８またはクラッ
ド層２．４を含む多層薄膜を成長し、次に、この基板上
に、グレーティング加工を施し、２回目の成長でこのグ
レーティングを埋め込む方法が、−ｉ的である。Distribution (i-reduction type semiconductor lasers and distributed reflection type semiconductor lasers have a refractive index step distributed at a constant period within the resonator axis, and oscillates by feedback or reflection due to light diffraction at the refractive index step) , there is selectivity in the oscillation wavelength,
Oscillates in single axis mode. Typically, this refractive index step is obtained by providing irregularities (hereinafter referred to as gratings) in the light guide layer or cladding layer adjacent to the active layer. FIG. 7 shows an example of a conventional distributed feedback semiconductor laser, and FIG. 8 shows an example of a conventional distributed reflection laser. In the conventional manufacturing method of distributed feedback semiconductor lasers and distributed reflection semiconductor lasers, first, a multilayer thin film including a light guide layer 57, 58 or a cladding layer 2.4 on which a grating is to be provided is grown in the first growth, and then a multilayer thin film is grown. The -i method is to process a grating on this substrate and embed the grating in the second growth.
しかしながら、従来技術には、以下に示す二つの問題点
がある。まず、第１点は、光ガイド層５７．５８または
クラッド層２，４に、グレーティング加工を施す際には
、フォトリソグラフィーによる超微細加工を必要とする
ため、レーザ光の回折効率を決定する、グレーティング
形状の制御には、高い加工精度を必要とする。また、第
２点は、２回目の埋め込み成長で、グレーティングの形
状保存が難しいため、成長方法に何らかの工夫を必要と
する。本発明の目的は、素子特性上重要な、レーザ光の
回折効率が、加工形状によらず一定に決まる、製作容易
で、均一性、再現性の高い、分布帰還型半導体レーザお
よび分布反射型半導体レーザを提供することにある。However, the conventional technology has two problems as shown below. First, when performing grating processing on the light guide layers 57 and 58 or the cladding layers 2 and 4, ultrafine processing by photolithography is required, so the diffraction efficiency of the laser beam is determined. Controlling the grating shape requires high processing accuracy. The second point is that it is difficult to preserve the shape of the grating during the second implantation growth, so some kind of ingenuity is required in the growth method. The purpose of the present invention is to provide a distributed feedback semiconductor laser and a distributed reflection semiconductor laser that are easy to manufacture, have high uniformity, and are highly reproducible, in which the diffraction efficiency of laser light, which is important for device characteristics, is fixed regardless of the processing shape. The goal is to provide lasers.
本発明の、分布帰還型半導体レーザは、２つありその１
つは、多重量子井戸構造よりなる活性層と、前記活性層
に、光およびキャリアの閉じ込めを行なうためのクラッ
ド層を少なくとも有する多層構造を備え、共振器軸方向
に、前記活性層を構成する多重量子井戸構造の無秩序化
による、一定周期の屈折率ステップを具備する構造にな
っている。また、もう１つの分布帰還型半導体レーザは
、活性層と、前記活性層に、光およびキャリアの閉じ込
めを行なうためのクラッド層と、多重量子井戸構造より
なる光ガイド層を少なくとも有する多層構造を備え、共
振器軸方向に、前記光ガイド層を構成する多重量子井戸
構造の無秩序化による、一定周期の屈折率ステップを具
備する構成になっている。また、本発明の分布反射型半
導体レーザは、活性層と、前記活性層に、光およびキャ
リアの閉じ込めを行なうためのクラッド層と、多重量子
井戸構造よりなる光ガイド層を少なくとも有する多層構
造から成る活性領域と、活性層が存在しない多層構造か
ら成る分布反射領域とを備え、分布反射領域にのみ、共
振器軸方向に、前記光ガイド層を構成する多重量子井戸
構造の無秩序化による、一定周期の屈折率ステップを具
備する構成になっている。There are two distributed feedback semiconductor lasers of the present invention, one of which is
One is a multilayer structure including an active layer having a multi-quantum well structure, and at least a cladding layer for confining light and carriers in the active layer; It has a structure with refractive index steps with a constant period due to disordering of the quantum well structure. Another distributed feedback semiconductor laser has a multilayer structure including at least an active layer, a cladding layer for confining light and carriers, and a light guide layer having a multi-quantum well structure. , the structure includes a refractive index step with a constant period in the resonator axis direction due to disordering of the multiple quantum well structure constituting the optical guide layer. Further, the distributed reflection type semiconductor laser of the present invention has a multilayer structure including at least an active layer, a cladding layer for confining light and carriers in the active layer, and a light guide layer having a multi-quantum well structure. It comprises an active region and a distributed reflection region consisting of a multilayer structure in which no active layer exists, and only in the distributed reflection region, a constant period is formed by disordering the multiple quantum well structure constituting the optical guide layer in the cavity axis direction. The structure has a refractive index step of .
本発明の分布帰還型半導体レーザおよび分布反射型半導
体レーザの、共振器軸と垂直方向からみた断面模式図を
第１図、第２図、第３図に示す。FIG. 1, FIG. 2, and FIG. 3 show schematic cross-sectional views of the distributed feedback semiconductor laser and the distributed reflection semiconductor laser of the present invention, viewed from a direction perpendicular to the resonator axis.
第１図、第２図、第３図ともに、レーザ光の回折効率を
決定する、共振器方向の一定周期の屈折率差は、活性層
または光ガイド層を構成する、多重量子井戸構造の不純
物注入による無秩序化で与えられるため、レーザ光の回
折効率は、加工形状によらず一定に決まり、製作が容易
である。しかも、共振器軸方向の屈折率差の大きさは、
多重量子井戸構造の組成、層厚などで決まるため、現在
の有機金属気相成長法（以下、ＭＯＶＰＥ法と称する）
、分子線エピタキシー法（以下、ＭＢＥ法と称する）等
の高精度薄膜成長技術によれば、素子特性について、十
分高い、均一性、再現性が得られる。また、埋め込み成
長に際し、形状保存の必要がなく、平坦成長であるため
、埋め込み成長による素子特性の劣化が少ない。なお、
注入する不純物原子は、２回目の埋め込み成長中の拡散
を抑えるために、できるだけ拡散係数の小さい原子を選
ぶことが重要である。また、第１図、第２図については
、分布帰還型半導体レーザであるなめ、発光領域に不純
物注入しているため、２回目の成長前に、表面汚染層を
エツチング後、再成長を行なっている。不純物注入によ
るダメージに関ｉ−では、アニール等の方法で回復を図
り、光吸収係数の増大を抑えた。また、第１図の分布帰
還型を導体レーザについては、活性層を挟む両側の層に
不純物注入を行なっているため、リーク電流防止のため
に、無秩序化された活性層の平均組成が、多重量子井戸
構造よりも大きな禁制帯幅を持つように設定することが
必要である。In Figures 1, 2, and 3, the refractive index difference at a constant period in the cavity direction, which determines the diffraction efficiency of laser light, is due to the impurity of the multi-quantum well structure constituting the active layer or optical guide layer. Since it is given by disordering by injection, the diffraction efficiency of the laser beam is fixed regardless of the processed shape, and manufacturing is easy. Moreover, the magnitude of the refractive index difference in the cavity axis direction is
The current metal organic vapor phase epitaxy (hereinafter referred to as MOVPE method) is determined by the composition, layer thickness, etc. of the multi-quantum well structure.
, molecular beam epitaxy (hereinafter referred to as MBE method) and other high-precision thin film growth techniques can provide sufficiently high uniformity and reproducibility of device characteristics. Further, during buried growth, there is no need to preserve the shape and the growth is flat, so there is little deterioration of device characteristics due to buried growth. In addition,
It is important to select implanted impurity atoms that have as small a diffusion coefficient as possible in order to suppress diffusion during the second implantation growth. In addition, as for Figures 1 and 2, since these are distributed feedback semiconductor lasers, impurities are injected into the light emitting region, so before the second growth, the surface contamination layer is etched and then regrown. There is. Regarding damage caused by impurity implantation, recovery was attempted by methods such as annealing, and an increase in the light absorption coefficient was suppressed. In addition, in the distributed feedback type conductor laser shown in Figure 1, impurities are implanted into the layers on both sides of the active layer, so the average composition of the disordered active layer is multiplied to prevent leakage current. It is necessary to set it to have a larger forbidden band width than the quantum well structure.
以下、本発明の分布帰還型半導体レーザおよび分布反射
型半導体レーザを製造工程に従って詳しく説明する。第
】図の分布帰還型半導体レーザの製造工程を第４図に、
第２図の分布帰還型半導体１−・−ザの製造工程を第５
図に、第３図の分布反射型半導体レーザの製造工程を第
６図に示す。ここでは、例示のため、結晶材料を人ｅ
ＧａＡｓ／ＧａＡｓ系とするが、他の半導体材料でも良
いはもちろんである。また、ここでは、結晶成長方法は
、ＭＯＶＰＥ法、不純物注入方法は、集束性イオンビー
ム法〈以下、ＦＩＢ法と称する）にて、説明を行なう。Hereinafter, the distributed feedback semiconductor laser and the distributed reflection semiconductor laser of the present invention will be explained in detail according to the manufacturing process. Figure 4 shows the manufacturing process of the distributed feedback semiconductor laser shown in Figure 4.
The manufacturing process of the distributed feedback semiconductor 1-... in FIG.
6 shows the manufacturing process of the distributed reflection type semiconductor laser shown in FIG. 3. As shown in FIG. Here, for illustrative purposes, the crystalline material is
Although GaAs/GaAs is used, it goes without saying that other semiconductor materials may be used. Further, herein, the crystal growth method will be described as the MOVPE method, and the impurity implantation method will be described as the focused ion beam method (hereinafter referred to as the FIB method).
まず、第１図の分布帰還型半導体レーザについて説明を
行なう、ｎ形ＧａＡｓ基板７上に、常圧Ｍ ＯＶ Ｐ
Ｅ法による成長で、厚さ０．８ｕ、ｍのｎ＾ｅ ０．５
ＧａＯ−５＾Ｓでなるクラッド層２、ＧａＡｓとＡｆｆ
。、５ｃａｏ−ｓ＾Ｓの多重量子井戸構造よりなる活性
層１、厚さ０．３μｍのＰ Ａｊ？ ０−９ＧａＯ
−５八Ｓでなるクラッド層３をこの順に成長する〔第４
図（ａ＞）、ここで、活性層のＧａＡｓウェル層は、量
子化しない程度に十分厚くし、無秩序化した後の活性層
の平均組成は、Ａｅｏ−２ｃａｏ、ａ＾Ｓとなるように
設定した。次に、この基板に対し、ＦＩＢ法により、周
期０．５μｍ、注入幅０．１μｍ、注入深さ１）、＼μ
ｍの直線状繰り返しパターンのＳｉイオン注入を行なっ
た〔第４図（ｂ）〕。直線状のＳｉ注入領域】１は、共
振器面と平行となるようにし、共振器軸方向に走る光に
対し、分布屈折率を与えられるようにした。また、注入
領域１１の繰り遅し周期は、ＧａＡｓ系レーザの発振波
長に対し、４次の回折格子を形成する。次に、ＦＩＢプ
ロセスによる表面汚染層を除去するために、クラッド層
３を０．１．ｕｍエツチングし、０．２μｍとした〔第
４図（ｃ））、次いで、２回目のＭＯＶＰＥ成長により
、厚さ０．６μｍのｐ −ｋｅ ０．５ＧａＯ，５Ａ５
でなるクラッド層４、厚さ０．５μｍのｐ−ＧａＡｓで
なるキヤ・・ノブ層６を順次成長した。ｉ＆後に、ｎ電
極８、ｎ電極９を形成し、第４図（ｄ）及び第１図に示
す分布帰還型半導体レーザを製作した。First, to explain the distributed feedback semiconductor laser shown in FIG.
Growth by E method, thickness 0.8u, m, n^e 0.5
Cladding layer 2 made of GaO-5^S, GaAs and Aff
. , 5cao-s^S multi-quantum well structure active layer 1, 0.3 μm thick P Aj? 0-9GaO
-58S cladding layer 3 is grown in this order [4th
Figure (a>), where the GaAs well layer of the active layer is made thick enough to prevent quantization, and the average composition of the active layer after disordering is set to be Aeo-2cao, a^S. did. Next, this substrate was processed using the FIB method with a period of 0.5 μm, an implantation width of 0.1 μm, and an implantation depth of 1).
Si ion implantation was performed in a linear repeating pattern of m [FIG. 4(b)]. The linear Si-implanted region 1 was made parallel to the resonator surface so as to give a distributed refractive index to light traveling in the direction of the resonator axis. Further, the retardation period of the injection region 11 forms a fourth-order diffraction grating with respect to the oscillation wavelength of the GaAs-based laser. Next, in order to remove the surface contamination layer due to the FIB process, the cladding layer 3 is coated with a thickness of 0.1. um etching to a thickness of 0.2 μm [Fig. 4(c)), and then a second MOVPE growth to form a p-ke 0.5GaO,5A5 film with a thickness of 0.6 μm.
A cladding layer 4 made of the above material and a carrier knob layer 6 made of p-GaAs having a thickness of 0.5 μm were successively grown. After i&, an n-electrode 8 and an n-electrode 9 were formed, and the distributed feedback semiconductor laser shown in FIG. 4(d) and FIG. 1 was manufactured.
次に、第２図の分布反射型半導体レーザについて説明す
る。ｎ型ＧａＡｓ基板７上に、厚さ０．８μｍのｎ−Ａ
ｅ ０６５ａａ０．５ＡＳでなるクラッド層２、ｎ−＾
ｔ？ ０−２Ｇａ０，８＾Ｓとｎ−人ｅ ０−５Ｇａ０
．５ＡＳの多重量子井戸構造でなる光ガイド層５、ｎ−
ＧａＡｓでなる表面保護層１２をこの順にＭＯＶＰＥ成
長する〔第５図（ａ）〕。次に、第１図の場合と同様に
、この基板に対し、ＦＩＢ法により、周期０，５μｍ、
注入幅０．１μｍ、注入深さ０．５μｍの直線状繰り返
しパターンの５１イオン注入を行なってＳｉ注入領域１
１を形成した〔第５図（ｂ））、次いで、ＦＩＢ法によ
る表面汚染層除去のため、表面保護層をエツチングによ
り除去する〔第５図（ｃ））、最後に、厚さ０．１μｍ
のＧａＡｓでなる活性層１゛、厚さ０．８μｍのｐ−人
＆ ０．５ＧａＯ−５＾Ｓでなるクラ・ンド層４、厚さ
０．５μＩｎのｐ −ＧａＡｓでなるキャンプ層６を順
次成長し、ｎ電極８、ｎ電極りを形成して、本発明の分
布帰還型半導体レーザを製作した〔第５図（ｄ）〕。Next, the distributed reflection type semiconductor laser shown in FIG. 2 will be explained. On the n-type GaAs substrate 7, a 0.8 μm thick n-A
Cladding layer 2 made of e 065aa0.5AS, n-^
T? 0-2Ga0,8^S and n-person e 0-5Ga0
．． Optical guide layer 5 having a multi-quantum well structure of 5AS, n-
A surface protective layer 12 made of GaAs is grown by MOVPE in this order [FIG. 5(a)]. Next, as in the case of FIG. 1, this substrate was subjected to the FIB method with a period of 0.5 μm
51 ion implantations were performed in a linear repeating pattern with an implantation width of 0.1 μm and an implantation depth of 0.5 μm to form Si implanted region 1.
1 was formed [FIG. 5(b)), and then the surface protective layer was removed by etching to remove the surface contamination layer by the FIB method [FIG. 5(c)].Finally, a film with a thickness of 0.1 μm was formed.
An active layer 1 made of GaAs of This was grown to form an n-electrode 8 and an n-electrode layer, thereby producing a distributed feedback semiconductor laser according to the present invention [FIG. 5(d)].
最後に、第３図の分布反射型半導体レーザについて説明
する。ｎ型ＧａＡｓ基板７上に、厚さθ、１）ｔｍのｎ
−Ａｅ ｏ、；Ｇａｏ、５＾Ｓでなるクラッド層２、
厚さ０．３ｔｔｒｎのｎ −Ａｆｆ ｒ）、２Ｇａ□、
８Ａｓとｎ−Ａ（！、）、ｑＧａｏ、、、ＡＳの多重量
子井戸ｍ造でなる光ガイド層５、厚さ０．１μｍのＧａ
Ａｓでなる活性層１′、厚さ０．８μｍのｐＡｆ ｏ、
５Ｇａｏ、、ＡＳでなるクラッド層４、厚さ０．５μｍ
のｐ−ＧａＡｓでなるキャップ層６をこの順に成長した
〔第６図（ａ）〕。次に、分布反射領域となる部分のキ
ャップ層、ｐ−クラッド層、活性層をエツチングにより
除去した〔第６図（ｂ）〕。そして、分分布反射域にの
み、第１図、第２図の場合と同様に、ＦＩＢ法によるＳ
ｉイオン注入を行なって注入領域１１を形成した〔第６
図（ｃ）Ｅ、注入条件は、第１図、第２図と同様である
。最後に、分布反射領域にのみ、遷択的に、ｐｋｅ ０
−５Ｇａ０．５＾Ｓとｎ −Ａｊ’ Ｑ、５ｃａＱ、５
＾Ｓの２層でなる電流ブロック層１０、ｐ −ＧａＡｓ
でなるキャップ層６を成長し、ｎ電極８、ｎ電極９を形
成して、本発明の分布反射型半導体レーザを製作した〔
第６図（ｄ））。Finally, the distributed reflection semiconductor laser shown in FIG. 3 will be explained. n of thickness θ, 1) tm on the n-type GaAs substrate 7
-Ae o, ;Gao, cladding layer 2 consisting of 5^S,
n-Affr) with a thickness of 0.3ttrn, 2Ga□,
A light guide layer 5 made of a multi-quantum well structure of 8As and n-A(!,), qGao,..., AS, a Ga layer with a thickness of 0.1 μm.
Active layer 1' made of As, pAfo with a thickness of 0.8 μm,
Cladding layer 4 made of 5Gao, AS, thickness 0.5μm
A cap layer 6 made of p-GaAs was grown in this order [FIG. 6(a)]. Next, the portions of the cap layer, p-cladding layer, and active layer that will become the distributed reflection region were removed by etching [FIG. 6(b)]. Then, only in the distributed reflection region, as in the case of Figs. 1 and 2, the FIB method is applied.
i ion implantation was performed to form the implanted region 11 [6th
In Figure (c)E, the implantation conditions are the same as in Figures 1 and 2. Finally, only in the distributed reflection region, selectively, pke 0
-5Ga0.5^S and n -Aj' Q, 5caQ, 5
Current blocking layer 10 consisting of two layers of ^S, p -GaAs
A cap layer 6 was grown, and an n-electrode 8 and an n-electrode 9 were formed to produce a distributed reflection semiconductor laser according to the present invention.
Figure 6(d)).
以上述べたように、本発明によれば、素子特性上重要な
、レーザ光の回折効率が、加工形状によらず一定に決ま
り、製作容易で、均一性、再現性の高い、分布帰還型半
導体レーザおよび分布反射型半導体レーザが得られる。As described above, according to the present invention, the diffraction efficiency of laser light, which is important for device characteristics, is fixed regardless of the processed shape, and the distributed feedback semiconductor is easy to manufacture and has high uniformity and reproducibility. A laser and a distributed reflection semiconductor laser are obtained.
第１図は、本発明の分布帰還型半導体レーザの断面層構
造の模式図、第２図は、本発明の分布帰還型半導体レー
ザの断面層構造の模式図、第３図は、本発明の分布反射
型半導体レーザの断面層構造の模式図、第４図は、第１
図の分布帰還型半導体レーザの製造工程を示す図、第５
図は、第２図の分布帰還型半導体レーザの製造工程を示
す図、第６図は、第３図の分布反射型半導体レーザの製
造工程を示す図、第７図は、従来の分布帰還型半導体レ
ーザの断面層構造の模式図、第８図は、従来の分布反射
型半導体レーザの断面層構造の模式図である。尚、第１
図から第８図まで、すべて、共振器軸に垂直な方向から
見た図である。
１・・・多重量子井戸構造よりなる活性層、１′・・・
活性層、２，３．４・・・クラッド層、５・・・多重量
子井戸構造よりなる光ガイド層、５′・・・光ガイド層
、６・・・キャップ層、７・・・基板、８，９・・・電
極、１０・・・電流ブロック層、１１・・・不純物注入
領域、１２・・・表面保護層。
代理人 弁理士 内 原 晋
、８を櫨
第２図
第１区
第３図
躬
！刀
第４図
第６図
第７図
第８図
１゜
２゜
３゜
手続補正帯（自発）
５」FIG. 1 is a schematic diagram of the cross-sectional layer structure of the distributed feedback semiconductor laser of the present invention, FIG. 2 is a schematic diagram of the cross-sectional layer structure of the distributed feedback semiconductor laser of the present invention, and FIG. 3 is a schematic diagram of the cross-sectional layer structure of the distributed feedback semiconductor laser of the present invention. A schematic diagram of the cross-sectional layer structure of a distributed reflection semiconductor laser, FIG.
Figure 5 shows the manufacturing process of the distributed feedback semiconductor laser shown in Figure 5.
The figure shows the manufacturing process of the distributed feedback type semiconductor laser shown in Figure 2, Figure 6 shows the manufacturing process of the distributed reflection type semiconductor laser shown in Figure 3, and Figure 7 shows the manufacturing process of the distributed feedback type semiconductor laser shown in Figure 3. A schematic diagram of a cross-sectional layer structure of a semiconductor laser. FIG. 8 is a schematic diagram of a cross-sectional layer structure of a conventional distributed reflection type semiconductor laser. Furthermore, the first
8 to 8 are all views seen from a direction perpendicular to the resonator axis. 1... Active layer consisting of multiple quantum well structure, 1'...
Active layer, 2, 3.4... Cladding layer, 5... Light guide layer having a multiple quantum well structure, 5'... Light guide layer, 6... Cap layer, 7... Substrate, 8, 9... Electrode, 10... Current blocking layer, 11... Impurity implantation region, 12... Surface protection layer. Agent Susumu Uchihara, Patent Attorney, 8th figure 2nd ward 1st ward 3rd place of Haji! Sword Figure 4 Figure 6 Figure 7 Figure 8 1゜2゜3゜Procedure correction band (voluntary) 5
Claims (3)
に、光およびキャリアの閉じ込めを行なうためのクラッ
ド層を少なくとも有する半導体レーザにおいて、共振器
軸方向に、前記活性層を構成する多重量子井戸構造の無
秩序化による、一定周期の屈折率ステップを具備するこ
とを特徴とする分布帰還型半導体レーザ。(1) In a semiconductor laser having an active layer having a multiple quantum well structure and at least a cladding layer for confining light and carriers in the active layer, the multiple quantum wells constituting the active layer are arranged in the cavity axis direction. A distributed feedback semiconductor laser characterized by having a refractive index step with a constant period due to a disordered well structure.
ャリアの閉じ込めを行なうためのクラッド層と、多重量
子井戸構造よりなる光ガイド層を少なくとも有する多層
構造を備え、共振器軸方向に、前記光ガイド層を構成す
る多重量子井戸構造の無秩序化による、一定周期の屈折
率ステップを具備することを特徴とする分布帰還型半導
体レーザ。(2) A multilayer structure including at least an active layer that participates in light emission, a cladding layer for confining light and carriers in the active layer, and a light guide layer consisting of a multiple quantum well structure, and The distributed feedback semiconductor laser is characterized in that it has a refractive index step with a constant period due to disordering of a multi-quantum well structure constituting the optical guide layer.
ャリアの閉じ込めを行なうためのクラッド層と、多重量
子井戸構造よりなる光ガイド層とを少なくとも有する多
層構造から成る活性領域と、少くとも前記光ガイド層を
有し、発光に与る活性層が存在しない多層構造から成る
分布反射領域とを具備し、前記分布反射領域にのみ、共
振器軸方向に、前記光ガイド層を構成する多重量子井戸
構造の無秩序化による、一定周期の屈折率ステップを具
備することを特徴とする分布反射型半導体レーザ。(3) an active region having a multilayer structure including at least an active layer that participates in light emission, a cladding layer for confining light and carriers in the active layer, and a light guide layer having a multi-quantum well structure; and a distributed reflection region having a multilayer structure having at least the light guide layer and no active layer that participates in light emission, and the light guide layer is configured only in the distributed reflection region in the resonator axis direction. A distributed reflection semiconductor laser characterized by having a refractive index step with a constant period due to disordering of a multi-quantum well structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23704288A JPH0283992A (en) | 1988-09-20 | 1988-09-20 | Distributed feedback type semiconductor laser and distributed reflection type semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23704288A JPH0283992A (en) | 1988-09-20 | 1988-09-20 | Distributed feedback type semiconductor laser and distributed reflection type semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0283992A true JPH0283992A (en) | 1990-03-26 |
Family
ID=17009542
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23704288A Pending JPH0283992A (en) | 1988-09-20 | 1988-09-20 | Distributed feedback type semiconductor laser and distributed reflection type semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0283992A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2369492A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | (Ga,In)(N,As) Laser structures using distributed feedback |
| EP1705763A2 (en) * | 2005-03-24 | 2006-09-27 | Avago Technologies Fiber IP (Singapore) Pte. Ltd. | Quantum cascade laser with grating formed by a periodic variation in doping |
| JP2010045066A (en) * | 2008-08-08 | 2010-02-25 | Fujitsu Ltd | Semiconductor laser device |
-
1988
- 1988-09-20 JP JP23704288A patent/JPH0283992A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2369492A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | (Ga,In)(N,As) Laser structures using distributed feedback |
| WO2002045221A3 (en) * | 2000-11-28 | 2003-10-23 | Kamelian Ltd | (ga,in)(n,as) laser structures using distributed feedback |
| EP1705763A2 (en) * | 2005-03-24 | 2006-09-27 | Avago Technologies Fiber IP (Singapore) Pte. Ltd. | Quantum cascade laser with grating formed by a periodic variation in doping |
| EP1705763A3 (en) * | 2005-03-24 | 2006-10-18 | Avago Technologies Fiber IP (Singapore) Pte. Ltd. | Quantum cascade laser with grating formed by a periodic variation in doping |
| CN1874091A (en) * | 2005-03-24 | 2006-12-06 | 阿瓦戈科技光纤Ip（新加坡）股份有限公司 | Quantum cascade laser with grating formed by a periodic variation in doping |
| JP2010045066A (en) * | 2008-08-08 | 2010-02-25 | Fujitsu Ltd | Semiconductor laser device |
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