JPH0282678A - Manufacture of semiconductor light emitting device - Google Patents
Manufacture of semiconductor light emitting deviceInfo
- Publication number
- JPH0282678A JPH0282678A JP23372588A JP23372588A JPH0282678A JP H0282678 A JPH0282678 A JP H0282678A JP 23372588 A JP23372588 A JP 23372588A JP 23372588 A JP23372588 A JP 23372588A JP H0282678 A JPH0282678 A JP H0282678A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- ingap
- compound semiconductor
- cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims description 25
- 239000000203 mixture Substances 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 22
- 230000010355 oscillation Effects 0.000 description 3
- 101100240461 Dictyostelium discoideum ngap gene Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 241001669573 Galeorhinus galeus Species 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 101150110330 CRAT gene Proteins 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体発光装置の製造方法に゛係り、特にしきい値電流
が低く、横モードが制御されたへβＧａ１ｎＰ系の可視
域の半導体発光装置の製造方法に関し、Ａｌを比較的多
く含有する層が露出せず、再成長可能な構造でしかもＳ
ＡＳレーザと同等の動作原理で動作可能な半導体発光装
置が得られる製造方法を提供することを目的とし、
活性層が形成された基板上にＡ１を含有する化合物半導
体よりなる一導電型の第１クラッド層と、該第１クラッ
ド層よりＡｌの含有量が少ないかもしくはＡ１を含有し
ない化合物半導体よりなるキャップ層、該キャップ層と
は異なる組成の化合物半導体よりなるエツチングストッ
プ層、該エツチングストップ層とは異なる組成であって
前記第１クラッド層よりＡｌの含有量が少ないかもしく
はＡＮを含有しない化合物半導体よりなり、且つ該キャ
ップ層より厚い反導波層を順に成長し、前記反導波層を
部分的にストライプ状にエツチング除去してエツチング
ストップ層を露出させ、前記エツチングストップ層を該
反導波層をマスクに用いてエツチング除去してキャップ
層を露出させてストライプ溝を形成し、
前記ストライプ溝内部及び該反導波層上にＡＩを含有す
る化合物半導体よりなる一導電型の第２クラッド層を形
成してなることを構成とする。[Detailed Description of the Invention] [Summary] This invention relates to a method of manufacturing a semiconductor light emitting device, and particularly to a method of manufacturing a βGa1nP visible range semiconductor light emitting device with a low threshold current and controlled transverse mode. The layer containing a relatively large amount of Al is not exposed and has a structure that can be regrown.
The purpose of the present invention is to provide a manufacturing method for obtaining a semiconductor light emitting device that can operate on the same operating principle as an AS laser. A cladding layer, a cap layer made of a compound semiconductor with a lower Al content than the first cladding layer or containing no Al, an etching stop layer made of a compound semiconductor having a composition different from that of the cap layer, and the etching stop layer. The anti-waveguide layer is made of a compound semiconductor having a different composition and has a lower Al content or does not contain AN than the first cladding layer, and is thicker than the cap layer, and the anti-waveguide layer is The etching stop layer is partially etched away in a stripe form to expose the etching stop layer, the etching stop layer is etched away using the anti-waveguide layer as a mask to expose the cap layer to form a stripe groove, and the stripe is etched away to expose the cap layer. A second cladding layer of one conductivity type made of a compound semiconductor containing AI is formed inside the groove and on the anti-waveguide layer.
本発明は半導体発光装置の製造方法に係り、特にしきい
値電流が低く、横モーＩが制御されたＡ Ｉ２ Ｇａ１
ｎＰ系の可視域の半導体発光装置の製造方法に関する。The present invention relates to a method of manufacturing a semiconductor light emitting device, and particularly relates to a method of manufacturing a semiconductor light emitting device, and in particular, a semiconductor light emitting device having a low threshold current and a controlled transverse motion I.
The present invention relates to a method of manufacturing an nP-based visible range semiconductor light emitting device.
近年光デイスク用の光源として、従来の＾ｉ！ ＧａＡ
ｓ系の７００ｎｍ帯の発振波長の半導体レーザに代わっ
てより高記録密度化可能なへβＧａ１ｎＰ系の６００ｎ
ｍ帯の発振波長を有する半導体レーザが要望されている
。In recent years, the conventional ^i! light source for optical disks has become popular. GaA
βGa1nP-based 600n which enables higher recording density in place of s-based semiconductor laser with an oscillation wavelength in the 700nm band
There is a demand for a semiconductor laser having an oscillation wavelength in the m band.
Ａ ｌｌ Ｇａ１ｎＰ系の半導体レーザの構造として；
ＩｎＧａＡｓＰ系の半導体レーザにおいて横モード制御
及び低しきい値電流が実現されたＳ Ａ Ｓ （Ｓｅｌ
ｆＡｌｉｇｎｅｄ−３ｔｒｕｃｔｕｒｅ）レーザ構造を
（Ｍ、Ｙａｎｏ ｅｔ ａｔ。As the structure of the All Ga1nP semiconductor laser;
S A S (Sel
fAligned-3structure) laser structure (M, Yano et at.
ＩＩＥＥＥ ＪＱＥ ＱＥ−１５（’７９）１３８８−
１３９５）を適用すると、第３図に示すようにｎ”−Ｇ
ａＡｓ基板１ ％ ｎ” −ＧａＡｓバッファ層２、ｎ
−Ａ Ｉ Ｇａ１ｎＰクラッド層３、ＩｎＧａＰ活性
層４、ｎ −１ｎＧａＰ反導層５、ｐ−へｊ！Ｇａ１ｎ
Ｐクラッド層６及びｐ ”−ＧａＡｓ層７の構造となる
。このようなＡ Ｉ Ｇａ１ｎＰ構造は第４Ａ図ないし
第４Ｃ図で示す工程で製造される。IIEEE JQE QE-15('79)1388-
1395), n”-G is applied as shown in Figure 3.
aAs substrate 1% n” -GaAs buffer layer 2, n
-A I Ga1nP cladding layer 3, InGaP active layer 4, n-1nGaP anticonducting layer 5, p- to j! Ga1n
The structure consists of a P cladding layer 6 and a p''-GaAs layer 7. Such an A I Ga1nP structure is manufactured by the steps shown in FIGS. 4A to 4C.
すなわち第４Ａ図のようにｎ”−ＧａＡｓ基板１、ｎ”
−ＧａＡｓ バッファ層２、ｎ −Ａ ｊ！ Ｇａ１
ｎＰクランド層３、アンドープＩｎＧａＰ活性層４ ａ
、、ｐ−ＡｌＧａ１ｎＰクランドＮ６及びｎ−１ｎＧ
ａＰ反導波層を通常工程で製造した後、第４Ｂ図第４Ｃ
図で示すようにＡ ｊ！ Ｇａ１ｎＰの第２クラッド層
を成長する時にストライプ溝形状にｎ −ＩｎＧａＰ反
導波層が除去されるがその際該ストライプ溝底面にｌｌ
が多いｐＡβＧａ１ｎＰＡｌクラット層が露出する。That is, as shown in FIG. 4A, an n"-GaAs substrate 1, n"
-GaAs buffer layer 2, n -A j! Ga1
nP ground layer 3, undoped InGaP active layer 4a
, p-AlGa1nP cland N6 and n-1nG
After manufacturing the aP anti-waveguide layer in the normal process, FIG. 4B, FIG. 4C
As shown in the figure A j! When growing the second cladding layer of Ga1nP, the n-InGaP anti-waveguide layer is removed in the shape of a stripe groove, and at that time, the bottom surface of the stripe groove is
The pAβGa1nPAl craat layer with a large amount of pAβGa1 is exposed.
上記の如く露出した第１クラッド層はＡＮが多いためそ
の表面が酸化されストライプ溝内部のクラッド層が良質
の結晶に成長できない。Since the first cladding layer exposed as described above has a large amount of AN, its surface is oxidized and the cladding layer inside the stripe groove cannot grow into a high-quality crystal.
従って単に従来のＩｎＧａＡｓＰ系と同様のＳＡＳレー
ザ構造をＡ Ｉ Ｇａ１ｎＰ系に応用しても低しきい値
電流で横モード制御が不可能であった。Therefore, even if a SAS laser structure similar to that of the conventional InGaAsP system was simply applied to the A I Ga1nP system, it was impossible to control the transverse mode with a low threshold current.
本発明はＡＩ２を比較的多く含有する層が露出せず再成
長可能でしかもＳＡＳレーザと同等の動作原理で動作可
能な半導体発光装置が得られる製造方法を提供すること
を目的とする。An object of the present invention is to provide a manufacturing method capable of producing a semiconductor light emitting device which can be regrown without exposing a layer containing a relatively large amount of AI2 and which can operate on the same operating principle as an SAS laser.
上記課題は本発明によれば活性層が形成された基板上に
Ａｌを含有する化合物半導体よりなる一導電型の第１ク
ラッド層と、該第１クラッド層よりＡ１の含有量が少な
いかもしくはＡＩを含有しない化合物半導体よりなるキ
ャップ層、該キャップ層とは異なる組成の化合物半導体
よりなるエツチングストップ層、該エツチングストップ
層とは異なる組成であって前記第１クラッド層よりｌの
含有量が少ないかもしくは八！を含有しない化合物半導
体よりなり、且つ該キャップ層より厚い反導波層を順に
成長し、
前記反導波層を部分的にストライプ状にエツチング除去
してエツチングストップ層を露出させ、前記エツチング
ストップ層を該反導波層をマスクに用いてエツチング除
去してキャップ層を露出させてストライプ溝を形成し、
前記ストライプ溝内部及び該反導波層上に八ｌを含有す
る化合物半導体よりなる一導電型の第２クラッド層を形
成してなることを特徴とする半導体発光装置の製造方法
によって解決される。According to the present invention, the above-mentioned problem is solved by providing a first cladding layer of one conductivity type made of a compound semiconductor containing Al on a substrate on which an active layer is formed, and a first cladding layer having a lower A1 content than the first cladding layer or an Al A cap layer made of a compound semiconductor that does not contain , an etching stop layer made of a compound semiconductor having a composition different from that of the cap layer, and an etching stop layer having a composition different from that of the etching stop layer and having a lower l content than the first cladding layer. Or eight! an anti-waveguide layer made of a compound semiconductor containing no compound semiconductor and thicker than the cap layer; the anti-waveguide layer is partially etched away in stripes to expose the etching stop layer; is removed by etching using the anti-waveguide layer as a mask to expose the cap layer to form a stripe groove, and a conductive layer made of a compound semiconductor containing 8L is formed inside the stripe groove and on the anti-waveguide layer. The problem is solved by a method of manufacturing a semiconductor light emitting device, which is characterized by forming a second cladding layer of a mold.
本発明では、例えばＡｌの含有の少ないｌｌ Ｉ Ｇａ
１ｎＰ、ＩｎＧａＰ等よりなるキャップ層により、Ａ／
の含有の多いＡ Ｉ Ｇａ１ｎＰ等よりなる第１クラッ
ド層が露出するのを防止するため良質の第２のへ４！Ｇ
ａ１ｎＰ等よりなる第２クラブト層が成長できる。ここ
で、本発明ではキャップ層を薄く形成できるようにキヤ
・７ブ層及び反導波層とは異なる組成のエツチングスト
・ツブ層をキャップ層と反導波層間に設けてエツチング
しており、キャップ層の厚さが例えば、数１００人とい
う非常に薄い厚さに形成でき、反導波層が活性層から大
きく離れないのでＳＡＳレーザと同等の動作原理で動作
することができる。In the present invention, for example, ll I Ga with low Al content
With a cap layer made of 1nP, InGaP, etc., A/
In order to prevent the first cladding layer made of A I Ga1nP etc. containing a large amount of 4! from being exposed, a high quality second cladding layer 4! G
A second Crabstone layer made of a1nP or the like can be grown. Here, in the present invention, in order to form a thin cap layer, an etching block layer having a composition different from that of the cap layer and the anti-waveguide layer is provided between the cap layer and the anti-waveguide layer, and etching is performed. The cap layer can be formed to a very thin thickness of, for example, several hundred layers, and the anti-waveguide layer is not far away from the active layer, so it can operate on the same operating principle as an SAS laser.
以下本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below based on the drawings.
第１図は本発明の一実施例により得られる半導体レーザ
を説明するための模式断面図である。FIG. 1 is a schematic cross-sectional view for explaining a semiconductor laser obtained according to an embodiment of the present invention.
第１図に示すように本発明に係る半導体レーザはｎ”−
ＧａＡｓ基板１１、ｎ ’−ＧａＡｓバッファ層１２、
ｎｏ−へｊ２ＧａｌｎＰクラッド層１３、アンド−プＩ
ｎ （ｈ ａ Ｐ層１４、ｐ−へＪＧａｌｎＰ第１ク
ラット層１５、ｐ−１ｎＧａＰキ＋７プ層１６ 、Ｇａ
Ａｓエツチング２８７１層１７、ｎ−ＩｎＧａＰ反導波
層１８、ｐ＾ｊｌ！ Ｇａ１ｎＰ第１ｎＰッド層１９及
びｐ”−ＧａＡｓ層２２からなる。すなわち特に本実施
例ではｐ＾１ＧａｌｎＰ第１ＧａｌｎＰ１５とｎ Ｉ
ｎＧａＰ反導波層との間に例えば０．０１〜０．０３μ
ｍ程度の非常に薄い厚さのＩｎＧａＰギ＋７プキャップ
層び０．０４〜０．０６ｐ程度の厚さのＧａＡｓエツチ
ング２８７１層１７を新たに設け／ｌが比較的多く含有
されたｐＡ Ｉ Ｇａ１ｎＰ第１クラ、ド層が再成長工
程で表面に露出しない状態で製造されるのでＳＡＳレー
ザと同様の動作原理で動作する半導体レーザを得る。As shown in FIG. 1, the semiconductor laser according to the present invention has n”-
GaAs substrate 11, n'-GaAs buffer layer 12,
no-j2GalnP cladding layer 13, and-p I
n (h a P layer 14, p-JGalnP first crat layer 15, p-1nGaP cap layer 16, Ga
As etched 2871 layer 17, n-InGaP anti-waveguide layer 18, p^jl! It consists of a Ga1nP first nP layer 19 and a p''-GaAs layer 22. In other words, in this embodiment, p^1GalnP first GalnP15 and nI
For example, 0.01 to 0.03μ between the nGaP anti-waveguide layer.
A GaAs etched 2871 layer 17 with a thickness of about 0.04 to 0.06 p is newly provided. Since the semiconductor laser is manufactured in a state in which the cladding and doping layers are not exposed to the surface during the regrowth process, a semiconductor laser that operates on the same operating principle as an SAS laser is obtained.
第２Ａ図ないし第２Ｄ図は本発明の一実施例の製造方法
を説明するための工程断面図である。FIGS. 2A to 2D are process cross-sectional views for explaining a manufacturing method according to an embodiment of the present invention.
第２Ａ図に示すようにｎ”−（１００）ＧａＡｓ基板Ｉ
ｌ上り有機金属ＣＶＤ法（ＭＯＣＶＤ法）を用いて順次
Ｓｅ ドープ（ドープＩ Ｉ Ｘ ＩＱ１８ｃｍ−’）
のｎ”−ＧａＡｓパ７ファ層（厚さ０．５ ａｍ） 、
Ｓｅ ドープ（ドープＩｔ Ｉ Ｘ １０１Ｂｃ１０
１Ｂ のｎ＋−八ｌ ｏ、 ｚ、Ｇａｏ、 ｚｓｌｎ
ｏ、 ｓＰクラッド層（厚さ１卿）、アンドープのＩｎ
ｏ、 ５Ｇａｏ、 ｓＰ層（厚さ０．１ｕｎ）、Ｚｎ
ドープ（ドープ！７Ｘ１０Ｉ？ｃｍ −’ ）のｐ
−１ｎｏ、 ５Ｇａｏ、 ｓＰキャップ層（厚さ０．０
２μｍ）、Ｚｎ トープ（トープｆｆｉ ７ Ｘ １
０”ｃｍ−３）のｐ −ＧａＡｓエッチングス［・ツブ
層（厚さ０．０５μｍ） 、Ｓｅ Ｆ −プ（トープ
Ｎ ７ Ｘ １０”Ｃｌｎ−’）のｎ −１ｎ６．５Ｇ
ａｏ、 ｓＰ反導波層（厚さ０．８μｌ１１）を成長温
度７００℃で形成する。As shown in Figure 2A, an n''-(100) GaAs substrate I
Sequentially doped with Se using upstream metal organic CVD method (MOCVD method) (doped I
n”-GaAs buffer layer (0.5 am thick),
Se doped (doped It I X 101Bc10
1B n+-8l o, z, Gao, zsln
o, sP cladding layer (thickness 1 μm), undoped In
o, 5Gao, sP layer (thickness 0.1un), Zn
p of dope (dope!7X10I?cm-')
-1no, 5Gao, sP cap layer (thickness 0.0
2 μm), Zn tope (taupe ffi 7 x 1
0"cm-3) p-GaAs etching [-tube layer (0.05μm thick), n-1n6.5G of Se F-type (tope N7 x 10"Cln-')
Ao, sP anti-waveguide layer (thickness: 0.8 μl) is formed at a growth temperature of 700°C.
次に第２Ｂ図に示ｔようにｎ −１ｎｏ、 ５Ｇａｏ、
ｓＰ反導波層上に約２０００ Ａの厚さのＳｉ３Ｎ、
膜１９を形成し、＜０１１＞方向に８ｕｎ巾の開口部を
通常のフォトリソグラフィ技術で形成し、次に該５ｉＪ
ｓ膜をマスクとして塩酸を用いた化学エツチングにより
ｌｎｏ、 ５Ｇａｏ、 、ｐ反導波層１８にストライプ
溝２０を形成する。このエツチングにより溝底面にＧａ
Ａｓエツチング２８７１層１７が露出する。Next, as shown in Figure 2B, n -1no, 5Gao,
approximately 2000 A thick Si3N on the sP anti-waveguide layer,
A film 19 is formed, an 8-un wide opening is formed in the <011> direction using a normal photolithography technique, and then the 5 iJ
A stripe groove 20 is formed in the lno, 5Gao, ,p anti-waveguide layer 18 by chemical etching using hydrochloric acid using the s film as a mask. Due to this etching, Ga is formed on the bottom surface of the groove.
As etched 2871 layer 17 is exposed.
次に第２Ｃ図に示すように硫酸と過酸化水素水と水の混
合液を用いた化学エツチングにより溝底部のＧａＡｓエ
ツチング２８７１層１７を除去する。Next, as shown in FIG. 2C, the GaAs etched 2871 layer 17 at the bottom of the groove is removed by chemical etching using a mixture of sulfuric acid, hydrogen peroxide, and water.
次に第１図に示すように５ｔ３Ｎａ膜マスクを弗酸によ
り除去した後、再度ＭＯＣＶＤ法によって順次Ｚｎ
ドープ（ドープ量Ｉ Ｘｌ０１ＢｃＩＩ＋−’） のｐ
−八ｊ’０．２ｓＧａ０． ｚｓｌｎｏ、 ５Ｐ第２グ
ランド層２１ （厚さｌｌｎ＠）及びＺｎ ドープ（
ドープ量４ ｘｌＱＩｌｌｃｆｌＩ−３）のｐ。Next, as shown in Figure 1, after removing the 5t3Na film mask with hydrofluoric acid, Zn was sequentially deposited again using the MOCVD method.
Dope (doping amount I Xl01BcII+-') p
-8j'0.2sGa0. zslno, 5P second ground layer 21 (thickness lln@) and Zn doped (
p of doping amount 4xlQIllcflI-3).
ＧａＡｓ層２２（厚さ１声）を７００℃の成長温度で形
成する。A GaAs layer 22 (one tone thick) is formed at a growth temperature of 700°C.
次に、図示はしないがｐ側電極ＡｕＺｎ／Ａｕ、及びｎ
側電極ＡｕＧｅ／Ａｕを形成して共振器厚さ３００卿で
レーザ素子を形成すると、しきい値電流５０ｍＡ、効率
Ｑ、２ｍＷ／ｍＡであり、ＣＷ出力２０ｍＷで基本横モ
ード発振の特性が得られた。Next, although not shown, the p-side electrode AuZn/Au and the n
When a laser device is formed with side electrodes AuGe/Au and a cavity thickness of 300 μm, the threshold current is 50 mA, the efficiency Q is 2 mW/mA, and fundamental transverse mode oscillation characteristics are obtained with a CW output of 20 mW. Ta.
以上説明したように本発明によればＡ／を比較的多く含
有するＡ Ｉ Ｇａ１ｎＰ第１ｎＰッド層を露出させな
いで再成長し得るので低しきい値電流で横モード制御さ
れた半導体発光装置を得ることができる。As explained above, according to the present invention, since the A I Ga1nP first nP layer containing a relatively large amount of A/ can be regrown without being exposed, a semiconductor light emitting device with transverse mode control at a low threshold current can be realized. Obtainable.
第１図は本発明の一実施例により得られる半導体レーザ
を説明するための模式断面図であり、第２Ａ図ないし第
２Ｃ図は本発明の一実施例の製造方法を説明するための
工程断面図であり、第３図は従来の半導体レーザを示す
断面図であり、
第４Ａ図ないし第４Ｃ図は従来例の製造方法を説明する
ための工程断面図である。
１ 、１１ ・＝ｎ”−ＧａＡｓ基板、２ 、１２・”
ｎ” −ＧａＡｓ バッファ層、３ 、１３ ＝−ｎ−
Ａｊ２ＧａｌｎＰクラッド層、４ 、 ｌ ４ ・・・
ＩｎＧａＰ活性層、５ 、１５ ・” ｐ−Ａｊ！Ｇａ
１ｎＰクラッド層、６ 、１８ ・＝ ｎ−１ｎＧａＰ
反導波層、７ 、２２−ｐ”−ＧａＡｓ層、
８．２０・・・ストライプ溝、
１６ ＝−ｐ−ＩｎＧａＰキャップ層、１７・・・Ｇａ
Ａｓエツチングストップ層、２１− ｐ −Ａ ｊ２
Ｇａ１ｎＰ第１ｎＰッド層。
第
回
第２Ａ回
第２Ｂ団
第２Ｃ回
２・・・Ｐ’−ＧａＡｓ層
１６・・・ｐ
ｎＧａＰキャップ磨
第
図
第
４Ｂ図
第４Ａ図
第４Ｃ図FIG. 1 is a schematic cross-sectional view for explaining a semiconductor laser obtained according to an embodiment of the present invention, and FIGS. 2A to 2C are process cross-sectional views for explaining a manufacturing method according to an embodiment of the present invention. FIG. 3 is a cross-sectional view showing a conventional semiconductor laser, and FIGS. 4A to 4C are process cross-sectional views for explaining a conventional manufacturing method. 1 , 11 ・=n”-GaAs substrate, 2 , 12 ・”
n''-GaAs buffer layer, 3, 13 =-n-
Aj2GalnP cladding layer, 4, l4...
InGaP active layer, 5, 15 ・”p-Aj!Ga
1nP cladding layer, 6, 18 ・= n-1nGaP
Anti-waveguide layer, 7, 22-p”-GaAs layer, 8.20...stripe groove, 16=-p-InGaP cap layer, 17...Ga
As etching stop layer, 21-p-A j2
Ga1nP first nP layer. 2nd A 2nd B Group 2C 2...P'-GaAs layer 16...p nGaP cap polishing diagram Figure 4B Figure 4A Figure 4C
Claims (1)
半導体よりなる一導電型の第１クラッド層と、該第１ク
ラッド層よりＡｌの含有量が少ないかもしくはＡｌを含
有しない化合物半導体よりなるキャップ層、該キャップ
層とは異なる組成の化合物半導体よりなるエッチングス
トップ層、該エッチングストップ層とは異なる組成であ
って前記第１クラッド層よりＡｌの含有量が少ないかも
しくはＡｌを含有しない化合物半導体よりなり、且つ該
キャップ層より厚い反導波層を順に成長し、前記反導波
層を部分的にストライプ状にエッチング除去してエッチ
ングストップ層を露出させ、前記エッチングストップ層
を該反導波層をマスクに用いてエッチング除去してキャ
ップ層を露出させてストライプ溝を形成し、前記ストラ
イプ溝内部及び該反導波層上にＡｌを含有する化合物半
導体よりなる一導電型の第２クラッド層を形成してなる
ことを特徴とする半導体発光装置の製造方法。1. A first cladding layer of one conductivity type made of a compound semiconductor containing Al on the substrate on which the active layer is formed, and a compound semiconductor with a lower Al content than the first cladding layer or a compound semiconductor containing no Al. an etching stop layer made of a compound semiconductor having a composition different from that of the cap layer; a compound having a composition different from the etching stop layer and containing less Al than the first cladding layer or containing no Al; An anti-waveguide layer made of a semiconductor and thicker than the cap layer is sequentially grown, and the anti-waveguide layer is partially etched away in stripes to expose an etching stop layer. A stripe groove is formed by etching away the wave layer using a mask to expose the cap layer, and a second cladding of one conductivity type made of a compound semiconductor containing Al is formed inside the stripe groove and on the anti-waveguide layer. A method for manufacturing a semiconductor light emitting device, characterized in that it is formed by forming layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23372588A JPH0282678A (en) | 1988-09-20 | 1988-09-20 | Manufacture of semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23372588A JPH0282678A (en) | 1988-09-20 | 1988-09-20 | Manufacture of semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0282678A true JPH0282678A (en) | 1990-03-23 |
Family
ID=16959591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23372588A Pending JPH0282678A (en) | 1988-09-20 | 1988-09-20 | Manufacture of semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0282678A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0477013A2 (en) * | 1990-09-20 | 1992-03-25 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a semiconductor laser |
| US6690701B2 (en) * | 1999-12-10 | 2004-02-10 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
| JP2018518052A (en) * | 2015-06-17 | 2018-07-05 | ツー−シックス レーザー エンタープライズ ゲーエムベーハー | Wide-area laser with anti-guide region for higher-order transverse mode suppression |
-
1988
- 1988-09-20 JP JP23372588A patent/JPH0282678A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0477013A2 (en) * | 1990-09-20 | 1992-03-25 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a semiconductor laser |
| US5210767A (en) * | 1990-09-20 | 1993-05-11 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser |
| US6690701B2 (en) * | 1999-12-10 | 2004-02-10 | The Furukawa Electric Co., Ltd. | Semiconductor laser device |
| JP2018518052A (en) * | 2015-06-17 | 2018-07-05 | ツー−シックス レーザー エンタープライズ ゲーエムベーハー | Wide-area laser with anti-guide region for higher-order transverse mode suppression |
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