JPH0282519A - Solid phase epitaxy method - Google Patents
Solid phase epitaxy methodInfo
- Publication number
- JPH0282519A JPH0282519A JP23410488A JP23410488A JPH0282519A JP H0282519 A JPH0282519 A JP H0282519A JP 23410488 A JP23410488 A JP 23410488A JP 23410488 A JP23410488 A JP 23410488A JP H0282519 A JPH0282519 A JP H0282519A
- Authority
- JP
- Japan
- Prior art keywords
- film
- energy beam
- solid phase
- amorphous semiconductor
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000000348 solid-phase epitaxy Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 239000007790 solid phase Substances 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 13
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 11
- 238000000137 annealing Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、半導体膜、特にＳｔ膜のエピタキシャル成長
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for epitaxial growth of semiconductor films, particularly St films.
（ロ）従来の技術
絶縁層（絶縁物の基板も含む）上に単結晶Ｓｉ層を形成
したものは、ＳＯＩ （Ｓｉｌｉｃｏｎ ｏｎＩｎｓｕ
ｌａｔｏｒ）構造と称され、狭い領域で容易に素子分離
が行なえ、高集積化や高速化が可能なものとして知られ
ている。そして、従来のＳｉ基板上に素子が作製される
半導体集積回路（ｒｃ）に比べて、特性向上が図れるこ
とから盛んに研究開発が行なわれている。(b) Conventional technology A method in which a single crystal Si layer is formed on an insulating layer (including an insulating substrate) is called SOI (Silicon on Insulator).
It is known as a structure that allows easy isolation of elements in a narrow area and allows for higher integration and higher speed. Further, research and development are being actively conducted on this semiconductor integrated circuit (RC) because its characteristics can be improved compared to conventional semiconductor integrated circuits (RC) in which elements are fabricated on a Si substrate.
絶縁層上に単結晶Ｓｉ膜を形成させるものとして、固相
エピタキシャル成長方法があり、これは単結晶Ｓｉ基板
上に、Ｓｉ基板面の一部をシードとして露出させて絶縁
膜を形成し、シードと絶縁膜上に非晶ｊｉＳｉ（以下ａ
−５ｉと称す）膜を堆積し、６００℃以下の低温でアニ
ールすることで、横方向に固相成長させて、ａ−３ｉ膜
を単結晶化させるものである。There is a solid-phase epitaxial growth method to form a single crystal Si film on an insulating layer.This method forms an insulating film on a single crystal Si substrate by exposing a part of the Si substrate surface as a seed. Amorphous jiSi (hereinafter a) is deposited on the insulating film.
The a-3i film is deposited and annealed at a low temperature of 600° C. or lower to cause solid-phase growth in the lateral direction, thereby converting the a-3i film into a single crystal.
固相エピタキシャル成長のアニールにレーサヲ用いるも
のがあるが、大面積を一度にレーザ照射してアニールす
ると、シードの結晶方位を継承しない粒界が発生して横
方向のエピタキシャル成長距離が伸びず、小面積のエピ
タキシャル領域しか得られなかった。Some methods use a laser to anneal solid-phase epitaxial growth, but when a large area is irradiated and annealed at once, grain boundaries that do not inherit the crystal orientation of the seed are generated, and the lateral epitaxial growth distance is not extended. Only epitaxial regions were obtained.
そこで、特開昭６２−２５７７１８号公報では、レーザ
の照射領域を、まず、シードを含む小領域にしてアニー
ルを行い、次にその小領域の周辺部分に照射領域を広げ
てアニールを行っている。即ち、シードから小領域ごと
にアニールを行ってエピタキシャル成長をさせ、大面積
のエピタキシャル領域を得ている。Therefore, in Japanese Patent Application Laid-Open No. 62-257718, the laser irradiation area is first annealed in a small area including the seed, and then the irradiation area is expanded to the peripheral part of the small area and annealing is performed. . That is, epitaxial growth is performed by annealing each small region from a seed to obtain a large-area epitaxial region.
Ｃ′ｌ 発明が解決しようとする課題しかし、上述の
様に、エピタキシャル成長させる領域を小領域に区切り
、アニール領域を順次広げていく様レーザの照射領域を
移動させるものでは、基板１枚当りの処理時間が非常に
長くなってしまう。また、レーザの照射領域を規制する
のにレチクルを使うので、装置が複雑となりコストも高
くなる。C'l Problems to be Solved by the Invention However, as described above, in a method in which the region to be epitaxially grown is divided into small regions and the laser irradiation region is moved so as to gradually expand the annealing region, the processing per substrate is It will take a very long time. Furthermore, since a reticle is used to regulate the laser irradiation area, the apparatus becomes complicated and costs increase.
に）課題を解決するための手段
本発明は単結晶半導体基台上に開孔部を有する絶縁膜を
形成し、前記開孔部から露出する単結晶半導体基台部分
及び前記絶縁繰上に非晶質半導体膜を形成し、該非晶質
半導体膜にエネルギービームを照射して該非晶質半導体
膜を単結晶化させる固相エピタキシャル成長方法におい
て、非晶質半導体膜上にエネルギービームの吸収を制御
するための反射防止膜または反射膜を形成し、エネルギ
ービームの強度を大きくする方向に変化させるものであ
る。B) Means for Solving the Problems The present invention forms an insulating film having an opening on a single crystal semiconductor base, and forms an amorphous film on the single crystal semiconductor base portion exposed from the opening and on the insulating layer. In a solid phase epitaxial growth method in which a crystalline semiconductor film is formed and the amorphous semiconductor film is irradiated with an energy beam to make the amorphous semiconductor film into a single crystal, in order to control the absorption of the energy beam on the amorphous semiconductor film. An anti-reflection film or a reflective film is formed to change the intensity of the energy beam in the direction of increasing it.
（ホ）作用
非晶質半導体股上に反射防止膜または反射膜を形成する
ことで、エネルギービームを照射したときの非晶質半導
体膜に温度分布を発生させることができる。そこで、シ
ードに相等する開孔部付近の温度を高く、その周囲温度
を低くする様にして、開孔部付近での固相エピタキシャ
ル成長を進行させ、その後エネルギービームの強度を大
きくすることで、固相成長の領域が開孔部付近からその
周囲へと広がる。(E) Function By forming an antireflection film or a reflective film on the amorphous semiconductor film, a temperature distribution can be generated in the amorphous semiconductor film when irradiated with an energy beam. Therefore, by increasing the temperature near the opening, which is equivalent to the seed, and lowering the surrounding temperature, solid phase epitaxial growth is promoted near the opening, and then the intensity of the energy beam is increased. The region of phase growth spreads from the vicinity of the opening to its surroundings.
（へ）実施例 第１図に沿って本発明の一実施例を説明する。(f) Example An embodiment of the present invention will be described along with FIG.
尚、本実施例では単結晶Ｓｉ基台として、単結晶Ｓｉ基
板を用いているが、基板上に形成された単結晶Ｓｉ膜を
用いても良い。In this embodiment, a single-crystal Si substrate is used as the single-crystal Si base, but a single-crystal Si film formed on the substrate may also be used.
（１；は０００面を主面とする単結晶Ｓｉ基台としての
単結晶Ｓｉ基板で、その表面に絶縁膜として膜厚０．２
μｍのＳ ｉ Ｏ２Ｍ（２１を減圧ＣＶＤ（化学気相成
長）法により堆積させる。そしてフォトリングラフィ技
術により、５１０２膜（２）の一部に開孔部（２ａ）を
形成し、単結晶Ｓｉ基板（１）の表面を露出させる（第
１図Ａ）。この開孔部（２ａ）から露出している単結晶
Ｓｉ基板＋１１表面がシード部（１ａ）となる。開孔部
（２ａ）即らシード部（１ａ）の幅は例えば１０μｍと
し、Ｓ ｉ Ｏ２Ｍ（２１の開孔部から開孔部までの幅
は例えば１００μｍとする。(1; is a single-crystal Si substrate as a single-crystal Si base with the 000 plane as the main surface, and an insulating film with a thickness of 0.2
μm of SiO2M (21) is deposited by low pressure CVD (chemical vapor deposition). Then, by photolithography technology, an opening (2a) is formed in a part of the 5102 film (2), and single-crystal SiO2M (21) is deposited. The surface of the substrate (1) is exposed (FIG. 1A). The surface of the single crystal Si substrate +11 exposed through the opening (2a) becomes the seed portion (1a).The opening (2a) immediately The width of the seed portion (1a) is, for example, 10 μm, and the width from hole to hole of S i O2M (21) is, for example, 100 μm.
仄に５ｉ０２膜（２）やシード部（１ａ）の表面上全面
１ｃａ−５ｉ膜ｔｓ＋ヲ減圧ＣＶＤ法やＵＨＶ蒸着法で
おおよそＣＬ３μｍ堆積する（第１図Ｂ）。The 5i02 film (2) and the 1ca-5i film ts+ are deposited on the entire surface of the seed portion (1a) to a thickness of about CL3 μm by low pressure CVD or UHV evaporation (FIG. 1B).
更にａ−８ｉ膜（３）上ζこ反射防止膜として約５０Ｏ
Ａの厚さのＳｉＮ膜（４）を減圧ＣＶＤ法により堆積す
る。そして、第１図Ｃに示す様に、ＳｉＮ膜の幅方向に
おけるシード部（１ａ）上とその横（左右夫々）５μｍ
程以外のところを選択的にエツチング除去する。Furthermore, about 50O as an anti-reflection film on the a-8i film (3).
A SiN film (4) having a thickness of A is deposited by low pressure CVD. Then, as shown in FIG.
Selective etching removes areas outside the area.
次にこの基板を図示しないレーザアニール装置に設置し
、表面全面（ａ−ＳｉＭ（３１及びＳｉＮ膜（４；上）
に、エネルギービームとして例えば、波長５１５ｎｍの
Ａｒ イオンレーザ光を照射する。Next, this substrate was placed in a laser annealing device (not shown), and the entire surface (a-SiM (31) and SiN film (4; top)
Then, for example, Ar ion laser light with a wavelength of 515 nm is irradiated as an energy beam.
すると、Ｓ ｉ ＮＭ（４）のレーザ光の吸収が大きい
ため、ＳｉＮ膜（４）を形成しである部分のａ−３ｉ膜
（３）の温度は他の部分よりも高くなる。すなわち、シ
ード部（１ａ）上のａ−３ｉｌｌｉ部分はＳ ｉ０２膜
（２１上のａ−３ｉ膜部分よりも高温となる。Then, since the absorption of laser light by Si NM (4) is large, the temperature of the a-3i film (3) in a certain part where the SiN film (4) is formed becomes higher than in other parts. That is, the a-3illi portion on the seed portion (1a) becomes hotter than the a-3i film portion on the Si02 film (21).
例えば、レーザ光のエネルギー強度を１５０ｍＪ／ｉと
して照射すると、シード部（１ａ）上のａ−３ｉ膜は５
００乃至５５０℃に加熱昇温され、シード部（１ａ）の
結晶方位を継承した固相エピタキシャル成長が５Ａ／ｓ
ｅｃの速さで進行する。このとき、ＳｉＮ膜（４）で覆
われていないａ−Ｓｉ膜部分は３５０℃程反の温度にし
かならず、結晶化せず非晶質のまま保持される（第１図
Ｄ）。従って多結晶となる亜粒界も発生しない。For example, when irradiating the laser beam with an energy intensity of 150 mJ/i, the a-3i film on the seed part (1a) will be
The temperature is raised from 00 to 550°C, and solid phase epitaxial growth inherits the crystal orientation of the seed part (1a) at 5A/s.
Proceed at the speed of ec. At this time, the portion of the a-Si film that is not covered with the SiN film (4) reaches a temperature of only about 350 DEG C., and remains amorphous without crystallizing (FIG. 1D). Therefore, subgrain boundaries that become polycrystalline do not occur.
シード部（１ａ）上のａ−５ｉ膜部分の固相エピタキシ
ャル成長が終了して単結晶５ｉ（３１となったら、レー
ザ光の強度を徐々に増加する（〜２５０品５ｘ／ｄぐら
いまで）。When the solid phase epitaxial growth of the a-5i film portion on the seed part (1a) is completed and the single crystal 5i (31) is reached, the intensity of the laser beam is gradually increased (up to about 250 products 5x/d).
この場合、ａ−３ｉ膜における５００℃の部分がシード
部（１ａ）付近からその周囲の低温部に向かって移動す
る様に徐々にレーザ光の強度を増し、シード部（１ａ）
上での固相エピタキシャル成長速度５Ａ／ｓｅｃよりも
遅い、例えばＩ Ａ／Ｓｅｃぐらいの速度でａ−３ｉ膜
の固相エピタキシャル成長を進行させる（第１図Ｅ）。In this case, the intensity of the laser beam is gradually increased so that the 500°C part of the a-3i film moves from near the seed part (1a) to the surrounding low temperature part, and
The solid phase epitaxial growth of the a-3i film is performed at a rate slower than the above solid phase epitaxial growth rate of 5 A/sec, for example, about IA/Sec (FIG. 1E).
５これにより、シード部（１ａ）上でａ−５ｉ膜が固相
エピタキシャル成長した単結晶５ｉ（３１をシードとし
て（結晶方位を継承して）シード部（１ａ）周辺へと固
相エピタキシャル成長が進み、ａ−３ｉ膜（３）全体が
単結晶Ｓｉ膜（３）となる（第１図Ｆ）。5 As a result, solid phase epitaxial growth of the a-5i film on the seed part (1a) proceeds around the seed part (1a) using the single crystal 5i (31 as a seed (inheriting the crystal orientation)), The entire a-3i film (3) becomes a single crystal Si film (3) (FIG. 1F).
尚、レーザ光の強度を増していくと、５００℃の部分は
シード部（１ａ）付近から徐々にその周囲へと移動して
いき、シード部（１ａ）付近では更Ｉこ温度が上がるが
、このシード部（１ａ）付近のａ −３ｉ膜は固相成長
して単結晶となっているので、温度が上がっても溶融せ
ず、固相エピタキシャル成長に悪影響を及ぼすことはな
いっ
本実施例に詔いて、反射防止膜であるＳｉＮ膜はａ−３
ｉＭ上に部分的に形成されたが、第２図に示す様にシー
ド部（１ａ）上のａ−３ｉ膜（３）上では厚く、その他
の部分では簿い、Ｓ ｉ ＮｊｆＡ（５１を形成しても
良く、また、第う図に示す様に、レーザ光の吸収の良い
反射防止膜ではなく、レーザ光の吸収の悪い反射膜（６
）を、反射防止膜の場合と逆の存在になる様に形成して
、レーザアニールによる固相エピタキシャル成長を行っ
ても良い。As the intensity of the laser beam increases, the 500°C portion gradually moves from the vicinity of the seed part (1a) to its surroundings, and the temperature increases further in the vicinity of the seed part (1a). Since the a-3i film near the seed part (1a) has grown into a single crystal through solid phase growth, it will not melt even if the temperature rises, and will not have a negative effect on solid phase epitaxial growth. The SiN film, which is an anti-reflection film, is a-3.
Although it was partially formed on the iM, as shown in Fig. 2, it was thick on the a-3i film (3) on the seed part (1a) and thin in other parts, and formed S i NjfA (51). Also, as shown in Figure 6, instead of using an anti-reflection film that absorbs laser light well, a reflective film (6) that has poor absorption of laser light may be used.
) may be formed so as to have an existence opposite to that of the antireflection film, and solid phase epitaxial growth may be performed by laser annealing.
（ト）発明の効果
本発明は以上の説明から明らかな如く、反射防止膜また
は反射膜をａ−３ｉ膜上に形成して、レーザ光を照射す
るので、ａ−８ｔＭに高温部と低温部の温度分布が発生
する。シード部付近のａ −３ｉ膜は固相成長により単
結晶化するが、その周囲は温度が低く結晶化せず、亜粒
界も発生しない。(G) Effects of the Invention As is clear from the above description, the present invention forms an anti-reflection film or a reflective film on the a-3i film and irradiates it with laser light, so that the a-8tM has a high temperature area and a low temperature area. temperature distribution occurs. The a-3i film near the seed portion becomes single crystallized by solid phase growth, but the temperature around it is low and crystallization does not occur, and no subgrain boundaries occur.
そして、レーザ光の強度を増すことで、シード部の周囲
へと固相エピタキシャル成長する領域が広第１図
その照射領域を変更することはしないので、アニール装
置として簡単なものでよく、コストも低く抑えられる。By increasing the intensity of the laser beam, the area for solid-phase epitaxial growth around the seed part is expanded (Figure 1).Since the irradiation area is not changed, a simple annealing device is sufficient and the cost is low. It can be suppressed.
また、レーザ光を走置せずに基板全り
面にあ２て゛ｒアニール行うので、処理時間の短縮化が
できる。Furthermore, since the entire surface of the substrate is annealed without applying a laser beam, the processing time can be shortened.
第１図は本発明方法の一実施例の工程説明図、第２図及
び第３図は夫々異なる実施例の説明図である。
（１）・・・単結晶Ｓｉ基板（単結晶半導体基台）、（
１ａ）・−・シード部、ｔ２）−３ｉＯｚｆｉＡ（絶縁
膜）（２ａ）・・・開孔部、（３）・・・ａ−３ｉ膜（
非晶質半導体膜＞、（３）・・・単結晶Ｓｉ４摸。FIG. 1 is a process explanatory diagram of one embodiment of the method of the present invention, and FIGS. 2 and 3 are explanatory diagrams of different embodiments. (1)...Single crystal Si substrate (single crystal semiconductor base), (
1a)...Seed part, t2)-3iOzfiA (insulating film) (2a)...Opening part, (3)...a-3i film (
Amorphous semiconductor film>, (3)...Single crystal Si4 sample.
Claims (1)
し、前記開孔部から露出する単結晶半導体基台部分及び
前記絶縁膜上に非晶質半導体膜を形成し、該非晶質半導
体膜にエネルギービームを照射して該非晶質半導体膜を
単結晶化させる固相エピタキシャル成長方法において、 非晶質半導体膜上にエネルギービームの吸収を制御する
ための反射防止膜または反射膜を形成し、エネルギービ
ームの強度を大きくする方向に変化させて、前記非晶質
半導体膜の単結晶化する領域を広げることを特徴とする
固相エピタキシャル成長方法。[Scope of Claims] 1) An insulating film having an opening is formed on a single crystal semiconductor base, and an amorphous semiconductor film is formed on the single crystal semiconductor base portion exposed from the opening and on the insulating film. In a solid phase epitaxial growth method in which an energy beam is formed on the amorphous semiconductor film and the amorphous semiconductor film is made into a single crystal, anti-reflection is provided on the amorphous semiconductor film to control absorption of the energy beam. A solid phase epitaxial growth method characterized by forming a film or a reflective film and changing the intensity of an energy beam in a direction of increasing it to widen a region where the amorphous semiconductor film is made into a single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23410488A JPH0282519A (en) | 1988-09-19 | 1988-09-19 | Solid phase epitaxy method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23410488A JPH0282519A (en) | 1988-09-19 | 1988-09-19 | Solid phase epitaxy method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0282519A true JPH0282519A (en) | 1990-03-23 |
Family
ID=16965695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23410488A Pending JPH0282519A (en) | 1988-09-19 | 1988-09-19 | Solid phase epitaxy method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0282519A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007001066A1 (en) | 2005-06-27 | 2007-01-04 | Daiichi Sankyo Company, Limited | Pharmaceutical preparation containing an angiotensin ii receptor antagonist and a calcium channel blocker |
| WO2008001734A1 (en) | 2006-06-27 | 2008-01-03 | Daiichi Sankyo Company, Limited | Compressed preparation |
| WO2009113420A1 (en) | 2008-03-13 | 2009-09-17 | 第一三共株式会社 | Improvement of dissolvability of preparation containing olmesartan medoxomil |
| WO2010126013A1 (en) | 2009-04-28 | 2010-11-04 | 第一三共株式会社 | Method for producing olmesartan medoxomil |
| WO2010126014A1 (en) | 2009-04-28 | 2010-11-04 | 第一三共株式会社 | Novel solvate crystals |
-
1988
- 1988-09-19 JP JP23410488A patent/JPH0282519A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007001066A1 (en) | 2005-06-27 | 2007-01-04 | Daiichi Sankyo Company, Limited | Pharmaceutical preparation containing an angiotensin ii receptor antagonist and a calcium channel blocker |
| WO2008001734A1 (en) | 2006-06-27 | 2008-01-03 | Daiichi Sankyo Company, Limited | Compressed preparation |
| WO2009113420A1 (en) | 2008-03-13 | 2009-09-17 | 第一三共株式会社 | Improvement of dissolvability of preparation containing olmesartan medoxomil |
| WO2010126013A1 (en) | 2009-04-28 | 2010-11-04 | 第一三共株式会社 | Method for producing olmesartan medoxomil |
| WO2010126014A1 (en) | 2009-04-28 | 2010-11-04 | 第一三共株式会社 | Novel solvate crystals |
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