JPH027565A - Metal base transistor - Google Patents
Metal base transistorInfo
- Publication number
- JPH027565A JPH027565A JP15866288A JP15866288A JPH027565A JP H027565 A JPH027565 A JP H027565A JP 15866288 A JP15866288 A JP 15866288A JP 15866288 A JP15866288 A JP 15866288A JP H027565 A JPH027565 A JP H027565A
- Authority
- JP
- Japan
- Prior art keywords
- base
- collector
- emitter
- interface
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 title claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 35
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000013078 crystal Substances 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910012990 NiSi2 Inorganic materials 0.000 abstract 5
- 238000000137 annealing Methods 0.000 abstract 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 7
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KMTYGNUPYSXKGJ-UHFFFAOYSA-N [Si+4].[Si+4].[Ni++] Chemical compound [Si+4].[Si+4].[Ni++] KMTYGNUPYSXKGJ-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
【発明の詳細な説明】 〔概要〕 金属ベーストランジスタに関し。[Detailed description of the invention] 〔overview〕 Regarding metal-based transistors.
ベースを一種の金属材料でエミッタとコレクタを同一種
の半導体材料で形成して、しかもベースエミッタ間の障
壁高さがペースエミッタ間の障壁高さと異なる金属ベー
ストランジスタの実現を目的とし。The aim is to realize a metal-based transistor in which the base is formed of one kind of metal material, the emitter and collector are formed of the same kind of semiconductor material, and the barrier height between the base and emitter is different from the barrier height between the base and emitters.
同一種の半導体材料からなるエミッタ４及びコレクタ２
と、該エミッタと該コレクタに挟まれた一種の金属材料
からなるベース３とを有する金属ベーストランジスタで
あって、ベースエミッタ界面における該半導体結晶と該
金属結晶との結晶方位関係がベースコレクタ界面におけ
る該半導体結晶と該金属結晶との結晶方位関係と異なる
ことにより、ベースエミッタ間の障壁高さがベースコレ
クタ間の障壁高さと異なっていることを特徴とする金属
ベーストランジスタにより構成する。Emitter 4 and collector 2 made of the same type of semiconductor material
and a base 3 made of a kind of metal material sandwiched between the emitter and the collector, wherein the crystal orientation relationship between the semiconductor crystal and the metal crystal at the base-emitter interface is such that the crystal orientation relationship at the base-collector interface is A metal base transistor characterized in that a base-emitter barrier height is different from a base-collector barrier height due to a different crystal orientation relationship between the semiconductor crystal and the metal crystal.
本発明は金属ベース 第３図に金属ベース す。第３図において。 The invention is based on metal Figure 3 shows the metal base. vinegar. In fig.
２１はコレクタ電極。21 is a collector electrode.
トランジスタに関する。Regarding transistors.
トランジスタの断面図を示 １は基板、２はコレクタ。A cross-sectional view of a transistor is shown. 1 is the board, 2 is the collector.
３はベース、３１はベース 電極、４はエミッタ、４１はエミッタ電極を表す。3 is base, 31 is base 4 represents an emitter, and 41 represents an emitter electrode.
従来、金属と半導体の間に形成されるショットキー障壁
高さは、物質特有の性質で決定されると考えられていた
。このため、コレクタ２．ベース３、エミッタ４が半導
体、金属、半導体の順に積層されてなる金属ベーストラ
ンジスタのベースエミッタ間、及びベースコレクタ間の
障壁高さはベースに用７いる金属とベース、コレクタに
用いる半導体で決まり、エミッタ晶とコレクタに同一種
の半導体材料を用い、ベースに一種の金属材料を用いる
時はベースエミッタ間、及びベースコレクタ間で同一の
障壁高さになると考えられていた。Conventionally, it was thought that the height of the Schottky barrier formed between a metal and a semiconductor was determined by the properties specific to the material. For this reason, collector 2. The barrier heights between the base emitter and between the base and collector of a metal base transistor in which the base 3 and emitter 4 are stacked in the order of semiconductor, metal, and semiconductor are determined by the metal used for the base and the semiconductor used for the base and collector. It was thought that when the same type of semiconductor material is used for the emitter crystal and the collector and the same type of metal material is used for the base, the barrier height will be the same between the base emitter and between the base collector.
したがって、ベースエミッタ間の障壁高さとベースコレ
クタ間の障壁高さを変えるためには、エミッタに用いる
半導体とコレクタに用いる半導体の材料を違えるか、ベ
ースに用いる金属層を２種類の金属の複合層にする奔し
かなかった。Therefore, in order to change the barrier height between the base emitter and the base collector, the semiconductor used for the emitter and the semiconductor used for the collector may be made of different materials, or the metal layer used for the base may be a composite layer of two types of metals. I had no choice but to do something.
従来の金属ベーストランジスタは第４図に示すようなバ
ンド構造を持っている。第４図において。A conventional metal base transistor has a band structure as shown in FIG. In Fig. 4.
Ｅｃは伝導帯下端エネルギー、Ｅｖは価電子帯上端エネ
ルギーを表す。Ec represents the conduction band lower end energy, and Ev represents the valence band upper end energy.
ベースエミッタ間の障壁高さφ１は金属と半導体Ｉで決
まり、ベースコレクタ間の障壁高さφ２は金属と半導体
■で決まる。従って、φ１とφ２を違えるためには２組
成の異なる半導体１例えば。The base-emitter barrier height φ1 is determined by the metal and the semiconductor I, and the base-collector barrier height φ2 is determined by the metal and the semiconductor ■. Therefore, in order to make φ1 and φ2 different, for example, semiconductors 1 with two different compositions are used.
半導体Ｉとしてシリコン、半導体■としてガリウム砒素
を用いる。また、エミッタとコレクタの半導体を同一種
の材料とし、ベースを２種類の金属の複合層から構成す
るようにして、φ１とφ２を違えることもできる。Silicon is used as the semiconductor I, and gallium arsenide is used as the semiconductor (2). Alternatively, φ1 and φ2 can be made different by making the emitter and collector semiconductors of the same type of material and making the base a composite layer of two types of metals.
しかし、従来の構造では半導体■と半導体■でキャリア
の有効質量の違うことから生じるリーク電流の増加、ベ
ースの金属複合層の接合面の不完全による特性の劣化等
１問題点が多い。However, the conventional structure has many problems, such as an increase in leakage current due to the difference in the effective mass of carriers between semiconductors (1) and (2), and deterioration of characteristics due to imperfections in the bonding surface of the base metal composite layer.
もし、エミッタとコレクタを同一種の半導体で形成しベ
ースを一種の金属で形成して、且つベースエミッタ間の
障壁高さとベースコレクタ間の障壁高さを変えることが
できれば、エミッタとコレクタの中でのキャリアの有効
質量が等しいのでキャリアのロスがない、同一のドーパ
ントでエミッタとコレクタのフェルミレベルを同一にで
きる等。If the emitter and collector are made of the same type of semiconductor, the base is made of a type of metal, and the barrier height between the base emitter and the base collector can be changed, then Since the effective mass of the carriers is the same, there is no loss of carriers, and the Fermi level of the emitter and collector can be made the same with the same dopant.
種々のメリットが生じる。Various benefits arise.
本発明はエミッタとコレクタを同一種の半導体で形成し
、ベースを一種の金属で形成して、且つベースエミッタ
間の障壁高さとベースコレクタ間の障壁高さを違えるこ
とを可能ならしめた金属ベーストランジスタを提供する
ものである。The present invention provides a metal base in which the emitter and collector are formed from the same type of semiconductor, the base is formed from a type of metal, and the barrier height between the base and emitter and the barrier height between the base and collector can be made different. The present invention provides transistors.
同一種の半導体材料からなるエミッタ４及びコレクタ２
と、該エミッタと該コレクタに挟まれた一種の金属材料
からなるベース３とを有する金属ベーストランジスタで
あって、ベースエミッタ界面における該半導体結晶と該
金属結晶との結晶方位関係がベースコレクタ界面におけ
る該半導体結晶と該金属結晶との結晶方位関係と異なる
ことにより、ベースエミッタ間の障壁高さがベースコレ
クタ間の障壁高さと異なっている金属ベーストランジス
タにより、上記課題は解決される。Emitter 4 and collector 2 made of the same type of semiconductor material
and a base 3 made of a kind of metal material sandwiched between the emitter and the collector, wherein the crystal orientation relationship between the semiconductor crystal and the metal crystal at the base-emitter interface is such that the crystal orientation relationship at the base-collector interface is The above problem is solved by a metal base transistor in which the base-emitter barrier height is different from the base-collector barrier height due to the difference in the crystal orientation relationship between the semiconductor crystal and the metal crystal.
ショットキー障壁高さは金属と半導体の接触によって半
導体のエネルギーギャップ内に形成される金属誘起準位
のエネルギー構造により決定される。この金属誘起準位
は物質の電気陰性度の相違と金属と半導体の界面の状態
により影響を受ける。The Schottky barrier height is determined by the energy structure of the metal-induced level formed within the energy gap of the semiconductor due to the contact between the metal and the semiconductor. This metal-induced level is influenced by the difference in electronegativity of the substances and the state of the interface between the metal and the semiconductor.
このため、ベースエミッタ間の界面とベースコレクター
間の界面の構造を変えることにより、各界面の障壁高さ
を変えることが可能となる。Therefore, by changing the structure of the interface between the base emitter and the interface between the base collector, it is possible to change the barrier height of each interface.
第１図に金属と半導体の積層構造の界面のタイプの一例
として、シリコン（Ｓｉ ）とニッケルシリサイド（Ｎ
ｉＳｉ２ ）の界面のタイプを示す。Figure 1 shows silicon (Si) and nickel silicide (N) as an example of the type of interface in a metal and semiconductor stacked structure.
The type of interface of iSi2) is shown.
金属をＮ１５ｉｚ ＋半導体をＳｔとし９両者が界面（
１１１）をもって接している時９両者のエピタキシャル
整合の仕方は２種類ある。即ち、ＡタイプとＢタイプと
があり、Ｓｉに対してＡタイプのＮ１５ｉｚとＢタイプ
のＮｉＳｉ２は双晶の関係にある。The metal is N15iz + the semiconductor is St, and both are at the interface (
There are two types of epitaxial matching between the two. That is, there are A type and B type, and N15iz of the A type and NiSi2 of the B type have a twin crystal relationship with respect to Si.
Ａタイプでは５ｉＯＣ軸とＮｉＳｉ２のＣ軸は平行であ
り、Ｂタイプでは平行でない。In type A, the 5iOC axis and the C axis of NiSi2 are parallel, and in type B, they are not parallel.
本発明はかかる結晶方位関係を持つＳｉとＮｉＳｉ２で
はその界面での障壁高さが異なるという新しい発見に基
づく。The present invention is based on the new discovery that Si and NiSi2, which have such a crystal orientation relationship, have different barrier heights at the interface.
第２図に本発明の金属ベーストランジスタのバンド構造
を示す。第２図において、Ｅｃは伝導帯下端エネルギー
、Ｅｖは価電子帯上端エネルギーを表す。金属と半導体
の界面を原子レベルで制御して、ベースエミッタ間の界
面の障壁高さφ１とベースコレクタ間の界面の障壁高さ
φ２を違える。FIG. 2 shows the band structure of the metal base transistor of the present invention. In FIG. 2, Ec represents the lower end energy of the conduction band, and Ev represents the upper end energy of the valence band. The interface between the metal and the semiconductor is controlled at the atomic level to vary the barrier height φ1 at the base-emitter interface and the barrier height φ2 at the base-collector interface.
そのために、金属を１Ｊｉｓｉ２ 、半導体をＳｉとす
るとき、ベースエミッタ間の界面をＢタイプの界面に、
ベースエミッタ間の界面をＡタイプの界面にする。かく
して、φ１とφ２に差を生じて、φはφ２より０．１４
ｅＶ大きくなる。その結果、エミッタ側からベースに入
って来た電子はコレクタ側に抜は易くなり、電流利得が
上がる。For this purpose, when the metal is 1Jisi2 and the semiconductor is Si, the interface between the base and emitter is a B type interface,
The interface between the base and emitter is an A type interface. Thus, a difference is created between φ1 and φ2, and φ is 0.14 less than φ2.
eV increases. As a result, electrons that have entered the base from the emitter side are easily extracted to the collector side, increasing the current gain.
Ｓｉの（１１１）面にＮｉＳｉ２がエピタキシャル成長
して作る界面にはＡタイプとＢタイプの２種類がある。There are two types of interfaces, A type and B type, which are created by epitaxial growth of NiSi2 on the (111) plane of Si.
ＳｉのＣ軸方向とＮｉＳｉ２のＣ軸方向が同じ方向とな
るように成長するＡタイプ構造と。A type structure in which the C-axis direction of Si and the C-axis direction of NiSi2 grow in the same direction.
（１１１）面に垂直な軸の周りに１８０度回転した双晶
型に成長するＢタイプ構造である。Ａタイプの障壁高さ
は０．６４ｅＶ、 Ｂタイプの障壁高さは０，７８ｅＶ
となる。このため、ベースコレクタ界面をＡタイプ、ベ
ースエミッタ界面をＢタイプとなるようにする。それを
実現する方法を次に示す。It is a B-type structure that grows in a twin-shaped structure rotated by 180 degrees around an axis perpendicular to the (111) plane. The barrier height of type A is 0.64eV, and the barrier height of type B is 0.78eV.
becomes. For this reason, the base-collector interface is made to be of type A, and the base-emitter interface is made to be of type B. Here's how to accomplish that.
Ｓｉ基板に約２０人のＮｉを分子線エピタキシー（ＭＢ
Ｅ）で積む。これを約４５０℃でアニールするとニッケ
ルシリサイド（ＮｉＳｉ２ ）層が該基板上に生じて、
その界面はＡタイプになる。該Ｎ１５ｉｚ層の上にＮｉ
を３５０℃以下の温度でＭＢＥで積んで該Ｎ１５ｉｚ層
を約２００人に厚さまで増加させる。Approximately 20 pieces of Ni were deposited on a Si substrate using molecular beam epitaxy (MB).
Load with E). When this is annealed at about 450°C, a nickel silicide (NiSi2) layer is formed on the substrate,
The interface becomes type A. Ni on the N15iz layer
The N15iz layer is increased to a thickness of about 200 by MBE at temperatures below 350°C.
該Ｎ１５ｉｚ層の上に３５０℃以下の温度でＳｉを約２
０００人の厚さにＭＢＨにより積む。Ｎ１５ｉｚ層とそ
の上のＳｉ層の界面はＢタイプの界面となる。Approximately 20% Si is deposited on the N15iz layer at a temperature below 350°C.
Loaded by MBH to a thickness of 0,000 people. The interface between the N15iz layer and the Si layer thereon becomes a B type interface.
かくして＋ Ｎｌ５１２層をベース、 Ｓｉ層をエミッ
タ及びコレクタとし、ベースエミッタ間をＢタイプの界
面、ベースコレクタ間をＡタイプの界面とする金属ベー
ストランジスタを得ることができる。In this way, a metal base transistor can be obtained in which the +Nl512 layer is used as a base, the Si layer is used as an emitter and collector, and the base-emitter is a B-type interface, and the base-collector is an A-type interface.
なお、 Ｓｉ基板にＮｉをＭＢＥで積み、約４５０℃で
アニールする時、Ｎｉの厚さが５人程度ではＢタイプの
界面が実現し、５０人を越えるとＡタイプとＢタイプの
両方の界面を持つ混晶となる。Furthermore, when Ni is deposited on a Si substrate by MBE and annealed at approximately 450°C, a B-type interface is achieved when the Ni thickness is about 5 layers, and both A-type and B-type interfaces are achieved when the Ni thickness exceeds 50 layers. It becomes a mixed crystal with
以上説明した様に９本発明によれば、エミッタとコレク
タを同一種の半導体材料から構成し、ベースを一種の金
属材料から構成するにもかかわらず、ベースコレクタ間
の障壁高さをベースエミッタ間の障壁高さより低くする
ことにより、ベースコレクタ界面の電子の反射を少なく
することが可能となり、良好なトランジスタ特性を持つ
金属ベーストランジスタを実現することができる。As explained above, according to the present invention, even though the emitter and collector are made of the same type of semiconductor material and the base is made of a type of metal material, the barrier height between the base and the collector is changed between the base and the emitter. By making the barrier height lower than , it is possible to reduce the reflection of electrons at the base-collector interface, and it is possible to realize a metal base transistor with good transistor characteristics.
第１図はＳｉとＮｉＳｉ２の界面のタイプ。
第２図は本発明の金属ベーストランジスタのバンド構造
。
第３図は金属ベーストランジスタの断面図。
第４図は従来の金属ベーストランジスタのバンド構造
である。図において。
１は基板。
２はコレクタ。
２１はコレクタ電極。
３はベース。
３１はベース電極。
４はエミッタ。
４１はエミンタ電極
Ａ−タイプ
（久）
Ｂ−タイプ
（閃
ＳｉしＮ１５Ｌ２のｆ４面のタイプ
第 １図
、ｉ−ｉひ５月め企んペーストラン゛ブスタめバ′ント
Ｊ＠ｉ第 ２ｙFigure 1 shows the type of interface between Si and NiSi2. FIG. 2 shows the band structure of the metal base transistor of the present invention. FIG. 3 is a cross-sectional view of a metal base transistor. FIG. 4 shows the band structure of a conventional metal base transistor. In fig. 1 is the board. 2 is the collector. 21 is the collector electrode. 3 is the base. 31 is a base electrode. 4 is the emitter. 41 is the emitter electrode A-type (long) B-type (f4 side type of flash Si N15L2)
Claims (1)
タ（２）と、該エミッタと該コレクタに挟まれた一種の
金属材料からなるベース（３）とを有する金属ベースト
ランジスタであって、ベースエミッタ界面における該半
導体結晶と該金属結晶との結晶方位関係がベースコレク
タ界面における該半導体結晶と該金属結晶との結晶方位
関係と異なることにより、ベースエミッタ間の障壁高さ
がベースコレクタ間の障壁高さと異なっていることを特
徴とする金属ベーストランジスタ。A metal base transistor having an emitter (4) and a collector (2) made of the same type of semiconductor material, and a base (3) made of a kind of metal material sandwiched between the emitter and the collector, the base emitter interface being Since the crystal orientation relationship between the semiconductor crystal and the metal crystal at the base-collector interface is different from the crystal orientation relationship between the semiconductor crystal and the metal crystal at the base-collector interface, the base-emitter barrier height is different from the base-collector barrier height. A metal-based transistor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866288A JPH027565A (en) | 1988-06-27 | 1988-06-27 | Metal base transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15866288A JPH027565A (en) | 1988-06-27 | 1988-06-27 | Metal base transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH027565A true JPH027565A (en) | 1990-01-11 |
Family
ID=15676611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15866288A Pending JPH027565A (en) | 1988-06-27 | 1988-06-27 | Metal base transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH027565A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4953648A (en) * | 1988-04-08 | 1990-09-04 | Mazda Motor Corporation | Rear wheel steering apparatus |
| JP2008130874A (en) * | 2006-11-22 | 2008-06-05 | Nissan Motor Co Ltd | Electrode film/silicon carbide structure, silicon carbide schottky barrier diode, field effect transistor of metal-silicon carbide semiconductor structure, optimum method for forming electrode film, and method for manufacturing electrode film/silicon carbide structure |
-
1988
- 1988-06-27 JP JP15866288A patent/JPH027565A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4953648A (en) * | 1988-04-08 | 1990-09-04 | Mazda Motor Corporation | Rear wheel steering apparatus |
| JP2008130874A (en) * | 2006-11-22 | 2008-06-05 | Nissan Motor Co Ltd | Electrode film/silicon carbide structure, silicon carbide schottky barrier diode, field effect transistor of metal-silicon carbide semiconductor structure, optimum method for forming electrode film, and method for manufacturing electrode film/silicon carbide structure |
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