JPH0273668A - Solid state image pickup element - Google Patents
Solid state image pickup elementInfo
- Publication number
- JPH0273668A JPH0273668A JP63225331A JP22533188A JPH0273668A JP H0273668 A JPH0273668 A JP H0273668A JP 63225331 A JP63225331 A JP 63225331A JP 22533188 A JP22533188 A JP 22533188A JP H0273668 A JPH0273668 A JP H0273668A
- Authority
- JP
- Japan
- Prior art keywords
- type
- film
- picture element
- thickness
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007787 solid Substances 0.000 title claims abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 238000003384 imaging method Methods 0.000 claims description 5
- 238000001228 spectrum Methods 0.000 abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 abstract description 5
- 230000036211 photosensitivity Effects 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 33
- 239000000758 substrate Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、カラービデオカメラ等に用いられる固体撮像
素子に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a solid-state image sensor used in color video cameras and the like.
（ロ）従来の技術
非晶質シリコン（ａ−５ｉ ）を光電変換部とする固体
撮像素子は、日経エレクトロニクスの１９８８年２月２
２日号のｐ２０７〜ｐ２１２に示されているように、高
感度及び高精細度の受光デバイスとして注目されている
。(b) Conventional technology A solid-state image sensor using amorphous silicon (a-5i) as a photoelectric conversion part was published by Nikkei Electronics in February 2, 1988.
As shown on pages 207 to 212 of the 2nd issue, it is attracting attention as a high-sensitivity and high-definition light-receiving device.
この構造は、同誌のｐ２０９の第２図に示されているよ
うに、Ｉ型ａ−５ｉ及び光入射側のｐ型非晶質炭化シリ
コン（ａ−５ｉＣ）の積層構造からなる充電変換部を、
単結晶シリコンからなる電荷結合素子（Ｃｈａｒｇｅ
Ｃｏｕｐｌｅｄ Ｄｅｖｉｃｅ、以下ＣＣＤと称す）の
上に設けたものである。As shown in Figure 2 on page 209 of the same magazine, this structure has a charge conversion section consisting of a stacked structure of I-type a-5i and p-type amorphous silicon carbide (a-5iC) on the light incident side. ,
A charge-coupled device made of single-crystal silicon
It is provided on a coupled device (hereinafter referred to as CCD).
（ハ）発明が解決しようとする課題
この固体撮像素子をカラービデオカメラ等に用いる場合
、素子の前面にＲ（赤）、Ｇ（緑）、Ｂ（青）のフィル
タを設けた３個の素子が必要であり、更に、これらは空
間的に異なる場所に設置されるため、特別な光学系も必
要であった。(c) Problems to be Solved by the Invention When this solid-state image sensor is used in a color video camera, etc., three elements are provided with R (red), G (green), and B (blue) filters on the front surface of the element. Moreover, since these are installed in spatially different locations, a special optical system was also required.
そこで、本発明の目的は、複数の素子を用いなければな
らないことによるコスト高、接続不良等による信頼性の
低さ及び色分離の光学系の必要性を解消することにある
。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to eliminate the high cost due to the necessity of using a plurality of elements, the low reliability due to poor connections, etc., and the need for a color separation optical system.
（ニ）課題を解決するための手段
本発明は、電荷転送部と、この電荷転送部に電気的に接
続された光電変換部とを備えた固体撮像素子において、
上記光電変換部は真性型の非晶質゛卜導体膜及び光入射
側の−４を型の非晶質半導体膜からなる積層構造を有す
ると共に上記一導電型の非晶質半導体膜の膜厚が各撮像
画素に対応して少なくとも２種類に設定されていること
を特徴とする。(d) Means for Solving the Problems The present invention provides a solid-state image sensor including a charge transfer section and a photoelectric conversion section electrically connected to the charge transfer section.
The photoelectric conversion section has a laminated structure consisting of an intrinsic type amorphous conductor film and a -4 type amorphous semiconductor film on the light incident side, and the film thickness of the one conductivity type amorphous semiconductor film is is set to at least two types corresponding to each imaging pixel.
（ホ）作用
本発明では、光入射側の一導電型の非晶質半導体膜の膜
ｊ１が各撮像画素に対応して異なることによって、主た
る光電変換領域である真性型の非晶質半導体膜に到達す
る光のスペクトルが異なり、その結果、入射光の色識別
が可能となる。(e) Effect In the present invention, the film j1 of the amorphous semiconductor film of one conductivity type on the light incident side is different corresponding to each imaging pixel, so that the amorphous semiconductor film of the intrinsic type which is the main photoelectric conversion region is The spectra of the light reaching the two are different, which makes it possible to distinguish the color of the incident light.
（へ）実施例
第１図は本発明の一実施例を示し、（１）はｐ型のシリ
コン基板、（２ａ）、（２ｂ）はイオンインプランテー
ション等にてｎ型にされることによりシリコン基板（１
）の−表面に並設して形成された蓄積ダイオード及び垂
直転送部、（３ａ）、（３ｂ）は光ＣＶＤ法と７オトリ
ソグラフイ手法とを用いてシリコン基板（１）の表面に
絶縁膜（４）を介して形成された多結晶シリコン基板極
であり、垂直転送部（２ｂ）と共にＣＣＤを構成する。(f) Embodiment Figure 1 shows an embodiment of the present invention, in which (1) is a p-type silicon substrate, (2a) and (2b) are silicon substrates that have been made into n-type by ion implantation, etc. Substrate (1
(3a) and (3b) are an insulating film formed on the surface of the silicon substrate (1) using a photo-CVD method and an otolithography method. (4) is a polycrystalline silicon substrate pole formed through the vertical transfer section (2b), and forms a CCD together with the vertical transfer section (2b).
（５）はスパッタ法とフォト１７７９７４手法とを用い
て各ＣＣＤを覆うような配：ηで各ＣＣＤの上方に設け
られると共に蓄積ダイオード（２ａ）に電気的に接続さ
れた画素電極、（６）はプラズマＣＶ Ｄ法により画素
電極（５）の全てを覆うように膜厚約５０００人に堆積
されたｊＱ、ａ−５ｉ膜、（７）はプラスＶ ＣＶ Ｄ
法によりｉ型ａ−５ｉ膜（６）−Ｊ−に堆積された一導
電型の半導体膜としてのホウ素濃度が約１％のｐ型ａ−
５ｉＣ膜であり、このｐ型ａ−５ｉＣ膜（７）は約１０
００人の膜厚で堆積された後、フォトリソグラフィ手法
を用いて、Ａ部分を除くＢ部分及びＣ部分の膜厚が夫々
約３００人及び約１００人とされており、また、これら
Ａ部分、Ｂ部分及びＣ部分はこの順序で繰り返して配さ
れている。これらｉ型ａ−５ｉ膜（６）及びｐ型ａ−５
ｉＣＩ］！（７）により光電変換部が形成されている。(5) is a pixel electrode provided above each CCD at η and electrically connected to the storage diode (2a); is a jQ, a-5i film deposited by plasma CVD method to a thickness of about 5000 to cover all of the pixel electrode (5), (7) is a positive V CV D
A p-type a-5i film (6)-J- with a boron concentration of about 1% was deposited on the i-type a-5i film (6)-J- by the method.
5iC film, and this p-type a-5iC film (7) has approximately 10
After the film is deposited to a thickness of 0.00 mm, the film thickness of the B portion and C portion excluding the A portion is approximately 300 mm and approximately 100 mm, respectively, using a photolithography method, and these A portions, The B part and the C part are arranged repeatedly in this order. These i-type a-5i films (6) and p-type a-5
iCI]! A photoelectric conversion section is formed by (7).
（８）はスパッタ法等によりｐ型ａ−８ｉＣ膜（７）の
表面に形成された透明電極である。(8) is a transparent electrode formed on the surface of the p-type a-8iC film (7) by sputtering or the like.
斯る構成において、透明電極（８）を通して光が入射す
ると、ｉ型ａ−５ｉ膜（６）に信号電荷が発生する。透
明を極（８）と画素を極（５）との間の電界分布に従っ
て、信号電荷は各画素電極（５）に移動する。そして、
蓄積ダイオード（２ａ）に蓄えられる。In such a configuration, when light is incident through the transparent electrode (8), signal charges are generated in the i-type a-5i film (6). Signal charges move to each pixel electrode (5) according to the electric field distribution between the transparent pole (8) and the pixel pole (5). and,
It is stored in the storage diode (2a).
その後、蓄積ダイオード（２ａ）に蓄えられた各画素の
信号電荷は、適宜のタイミングにＣＣＤにより転送され
る。Thereafter, the signal charge of each pixel stored in the storage diode (2a) is transferred by the CCD at an appropriate timing.
ところで、本発明の特徴は、ｐ型ａ−５ｉＣ膜（７）の
膜厚が各画素（Ａ部分、Ｂ部分及びＣ部分）に対応して
異なることにある。このｆｌｉｌ＆により、Ａ部分、Ｂ
部分及びＣ部分の光感度スペクトルは第２図にＡ、Ｂ及
びＣにて示すように異なる。そして、これら各スペクト
ルＡ、Ｂ及びＣに関して（Ｃ−Ｂ ）、（Ｂ−Ａ）の演
算をしたスペクトル及びスペクトルＡから、第３図に示
すように、Ｒ（赤）、Ｇ（緑）及びＢ（青）に対応する
３種類のスペクトルが得られる。従って、画素のＡ部分
、Ｂ部分及びＣ部分から得られる電荷信号を適宜に演算
処理することにより、カラー画像信号が得られることと
なる。Incidentally, the feature of the present invention is that the thickness of the p-type a-5iC film (7) differs depending on each pixel (portion A, portion B, and portion C). Due to this flil &, part A, B
The photosensitivity spectra of portions and portions C are different as shown at A, B and C in FIG. Then, as shown in Figure 3, from the spectrum and spectrum A obtained by calculating (C-B) and (B-A) for each of these spectra A, B, and C, R (red), G (green), Three types of spectra corresponding to B (blue) are obtained. Therefore, a color image signal can be obtained by appropriately arithmetic processing the charge signals obtained from the A, B, and C parts of the pixel.
上記実施例では、ｐ型ａ−３ｉＣ膜（７）のホウ素濃度
は１％であったが、これを２％とすると、Ａ部分、Ｂ部
分及びＣ部分のｐ型ａ−３ｉＣ膜（７）の膜厚は７００
人、１７０人及び５０人とすることにより、上述の場合
と同等の光感度スペクトルが得られる。また、ホウ素１
農度を０．３％とすると、Ａ部分、Ｂ部分及びＣ部分の
ｐ型ａ−５ｉＣ膜（７）の膜厚は２０００人、４００人
及び１５０人とすることにより、上述の場合と同等の光
感度スペクトルが得られる。In the above example, the boron concentration of the p-type a-3iC film (7) was 1%, but if this is set to 2%, the p-type a-3iC film (7) in the A, B, and C parts. The film thickness is 700
By setting the number of people to 170 people and 50 people, a photosensitivity spectrum equivalent to that in the above case can be obtained. Also, boron 1
Assuming that the agricultural degree is 0.3%, the thickness of the p-type a-5iC film (7) in parts A, B, and C is equivalent to the above case by setting it to 2000, 400, and 150 people. A photosensitivity spectrum of .
更に、一導電型の半導体膜としては、ｐ型ａ−５ｉＣ膜
に限らず、ｐ型機結晶Ｓｉやｎ型非晶質窒化シリコン（
ａ−５ｉＮ）を用いても、上述の場合と同等の効果が得
られる。Furthermore, semiconductor films of one conductivity type are not limited to p-type a-5iC films, but include p-type mechanocrystalline Si and n-type amorphous silicon nitride (
Even if a-5iN) is used, the same effect as in the above case can be obtained.
本発明では、ｐ型ａ−３ｉＣ膜（７）はこれを均一の厚
さで形成した後、エツチングによりその膜厚を部分的に
変化させたが、レーザ光による干渉縞を利用した光ＣＶ
Ｄ法を用いることにより、最初がら縞状に膜厚を変化さ
せてもよい。In the present invention, the p-type a-3iC film (7) is formed to have a uniform thickness and then the film thickness is partially changed by etching.
By using the D method, the film thickness may be changed in a striped manner from the beginning.
また、ＣＣＤによる電荷の転送方向とｐ型ａ−５ｉＣ膜
（７）の膜厚の変化方向とは、一致しても垂直にしても
よく、あるいは斜めにしてもよい。更に、ｐ型ａ−５ｉ
Ｃ膜（７）の膜厚の変化はストライブ状でなくても格子
状であってもよい。Furthermore, the direction of charge transfer by the CCD and the direction of change in the thickness of the p-type a-5iC film (7) may be coincident, perpendicular, or oblique. Furthermore, p-type a-5i
The change in thickness of the C film (7) may not be in the form of stripes but may be in the form of a lattice.
なお、光電変換部としてはａ−５ｉに限らず、非晶質シ
リコンゲルマニウム（ａ−８ｉＧｅ）等の非晶質シリコ
ン系アロイでも有効である。更に、ＣＣＤ以外にもａ−
５ｉまたは多結晶シリコンの薄膜トランジスタアレイで
もよい。Note that the photoelectric conversion portion is not limited to a-5i, but amorphous silicon alloys such as amorphous silicon germanium (a-8iGe) are also effective. Furthermore, in addition to CCD, a-
5i or polycrystalline silicon thin film transistor arrays.
（ト）発明の効果
本発明によれば、光入射側の一導電型の非晶質１’ ４
（４−膜の膜１ｇ−を各撮像画素に対応して異ならし
めることにより、主たる光電変換領域である真性り！の
非晶質半導体膜に到達する光のスペクトルを異ならしめ
、その結果、入射光の色識別を可能としたので、唯一の
固体撮像素子でＲＧＢの信号をｊ！）ることかでき、低
コスト化、高信頼化及び小型化を図ることができる。(g) Effect of the invention According to the invention, the amorphous material 1' 4 of one conductivity type on the light incident side
(By making the film 1g of the film different for each imaging pixel, the spectrum of light reaching the amorphous semiconductor film of the intrinsic region, which is the main photoelectric conversion region, is made different, and as a result, the incident Since it is possible to distinguish the color of light, RGB signals can be processed using only a solid-state image sensor, and it is possible to achieve lower costs, higher reliability, and smaller size.
第１図は本発明の一実施例を示す断面図、第２図及び第
３図は光感度スペクトルを示す特性図である。
（１）・・・シリコン基板、（２ａ）・・・蓄積ダイオ
ード、（２ｂ）・・・垂直転送部、（４ａ）’（４ｂ）
・・多結晶シリコン電極、（６）−−−ｉ型ａ−５ｉ、
（７）−・・Ｉ）型ａ−５ｉＣ。FIG. 1 is a sectional view showing an embodiment of the present invention, and FIGS. 2 and 3 are characteristic diagrams showing a photosensitivity spectrum. (1)...Silicon substrate, (2a)...Storage diode, (2b)...Vertical transfer section, (4a)' (4b)
...Polycrystalline silicon electrode, (6)---i type a-5i,
(7)--I) type a-5iC.
Claims (1)
れた光電変換部とを備えた固体撮像素子において、上記
光電変換部は真性型の非晶質半導体膜及び光入射側の一
導電型の非晶質半導体膜からなる積層構造を有すると共
に上記一導電型の非晶質半導体膜の膜厚が各撮像画素に
対応して少なくとも２種類に設定されていることを特徴
とする固体撮像素子。(1) In a solid-state imaging device that includes a charge transfer section and a photoelectric conversion section electrically connected to the charge transfer section, the photoelectric conversion section includes an intrinsic amorphous semiconductor film and a portion on the light incident side. A solid body having a laminated structure consisting of an amorphous semiconductor film of a conductivity type, and wherein the thickness of the amorphous semiconductor film of one conductivity type is set to at least two types corresponding to each imaging pixel. Image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63225331A JP2657075B2 (en) | 1988-09-08 | 1988-09-08 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63225331A JP2657075B2 (en) | 1988-09-08 | 1988-09-08 | Solid-state imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0273668A true JPH0273668A (en) | 1990-03-13 |
| JP2657075B2 JP2657075B2 (en) | 1997-09-24 |
Family
ID=16827678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63225331A Expired - Lifetime JP2657075B2 (en) | 1988-09-08 | 1988-09-08 | Solid-state imaging device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2657075B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100265331B1 (en) * | 1997-06-30 | 2000-10-02 | 김영환 | Method for forming color filter of image sensor |
| US9257466B2 (en) | 2013-03-14 | 2016-02-09 | Kabushiki Kaisha Toshiba | Solid state imaging device and method for manufacturing solid state imaging device |
-
1988
- 1988-09-08 JP JP63225331A patent/JP2657075B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100265331B1 (en) * | 1997-06-30 | 2000-10-02 | 김영환 | Method for forming color filter of image sensor |
| US9257466B2 (en) | 2013-03-14 | 2016-02-09 | Kabushiki Kaisha Toshiba | Solid state imaging device and method for manufacturing solid state imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2657075B2 (en) | 1997-09-24 |
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