JPH0265405A - Frequency adjusting method for surface acoustic wave resonator - Google Patents
Frequency adjusting method for surface acoustic wave resonatorInfo
- Publication number
- JPH0265405A JPH0265405A JP21714988A JP21714988A JPH0265405A JP H0265405 A JPH0265405 A JP H0265405A JP 21714988 A JP21714988 A JP 21714988A JP 21714988 A JP21714988 A JP 21714988A JP H0265405 A JPH0265405 A JP H0265405A
- Authority
- JP
- Japan
- Prior art keywords
- surface acoustic
- acoustic wave
- substrate
- wave resonator
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 12
- 230000005284 excitation Effects 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 230000001902 propagating effect Effects 0.000 abstract description 2
- 230000000644 propagated effect Effects 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004091 panning Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、中央部の励振電極を挟んで左右に一対の反射
器が夫々基板の弾性表面波が伝搬する面に設置される弾
性表面波共振子に係わり、特に前記弾性表面波共振子の
周波数調整法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a surface acoustic wave device in which a pair of reflectors on the left and right sides of a central excitation electrode are respectively installed on the surface of a substrate through which surface acoustic waves propagate. The present invention relates to a resonator, and particularly relates to a frequency adjustment method for the surface acoustic wave resonator.
［従来の技術］ 以下図面を用いて従来の技術を説明する。[Conventional technology] The conventional technology will be explained below using the drawings.
第３図は従来の一般に用いられる弾性表面波共振子のｍ
造園である。Figure 3 shows m of a conventional surface acoustic wave resonator commonly used.
It's landscaping.
第３図において、Ａｏは弾性表面波を用いた弾性表面波
共振子である。この弾性表面波を用いた弾性表面波共振
子ＡＯにあって、数十〜数百ＭＨ２という高い周波数で
利用されており、その共振周波数は、櫛形′ｆ４極のピ
ッチで決定されている。In FIG. 3, Ao is a surface acoustic wave resonator using surface acoustic waves. This surface acoustic wave resonator AO using surface acoustic waves is used at a high frequency of several tens to hundreds of MH2, and its resonant frequency is determined by the pitch of the comb-shaped 'f4 poles.
１は共振測定に対して弾性定数の良い例えば水晶やリチ
ウムナイオベート＜Ｌ、ｉ Ｎｂ ０３ ）やリチウム
タンタレート（Ｌ、Ｔ、Ｏコ）等から成る基板であり、
例えば基板にＳＴカット水晶を用いて７５０ＭＨ２の共
振子を実現する場合の電極のピッチは２μｍとなる。２
は基板１の中央部分にエツチング等の加工技術を用いて
設けられた例えばＡＩ等から成るＷＪ振電極である。３
は励振電極２を挟んで左右に前記したようなエツチング
法等を用いて設けられた例えばＡＩ等から成る一対の反
射器である。この様な弾性表面波共振子ＡＯは、基板両
端部分を例えばハーメチック端子や発振回路を含むプリ
ント基板上等（図省略）の他の固定要素に接着刑等を用
いて取付・固定され、用いられている。1 is a substrate made of crystal, lithium niobate <L, i Nb 03 ), lithium tantalate (L, T, O), etc., which has a good elastic constant for resonance measurement;
For example, when a 750 MH2 resonator is realized using an ST-cut crystal for the substrate, the pitch of the electrodes is 2 μm. 2
is a WJ vibrating electrode made of, for example, AI, provided in the center of the substrate 1 using a processing technique such as etching. 3
are a pair of reflectors made of, for example, AI, provided on the left and right sides with the excitation electrode 2 in between, using the etching method described above. Such a surface acoustic wave resonator AO is used by attaching and fixing both ends of the board to other fixing elements such as a hermetic terminal or a printed circuit board containing an oscillation circuit (not shown) using adhesive or the like. ing.
［発明が解決しようとする課Ｍ］
ところで、このような構造においては電極のピッチが前
記したように例えば２μｍと小さいために、製作が非常
に難しい上に、この結果として得る測定データにおいて
も共振周波数のばらつきがあり、所望のデータを得るこ
とが難しいという測定上の影響がある。又、電極の膜厚
や波の伝搬方向でも共振周波数に影響を与えるので、共
振周波数を所望の周波数に合せるなめに、例えば、低速
の基板エッチで清を形成して質量付加効果で伝搬速度を
変える基板エツチング法（範囲： −１５０００ＰＰ鵡
以上、稍度： １０ ｐｐＩ１以内）や、水晶表面に紫
外光を当てて表面の不整構造を整えて伝搬速度を上げる
紫外線照射法（範囲： ＨＡＸ、２５０ ＰＰｍ 、精
度＝２０１）Ｉ）１１以内）や、反射器のグレーディン
グを焼切り電気的に開放して反射率・伝搬速度を変える
レーザー・パニング法（範囲： ＨＡＸ、２５０ ＰＰ
ｉ 、 ２０００ｐｐ１以上、精度：正確な資料熱）等
による周波数ａｍｌ！！が必要になる等面倒である、と
いう間層点があった。[Problem M to be solved by the invention] By the way, in such a structure, since the pitch of the electrodes is as small as 2 μm, as mentioned above, it is very difficult to manufacture, and the measurement data obtained as a result also shows resonance. Frequency variations have the effect on measurement that it is difficult to obtain desired data. In addition, the thickness of the electrode and the direction of wave propagation also affect the resonant frequency, so in order to adjust the resonant frequency to the desired frequency, for example, by etching the substrate at a low speed to form a layer, the propagation speed can be increased by adding mass. The substrate etching method (range: -15000PPm or more, viscosity: within 10ppI1), and the ultraviolet irradiation method (range: HAX, 250PPm), which applies ultraviolet light to the crystal surface to adjust the irregular structure of the surface and increase the propagation speed. , accuracy = 201) I) within 11), and the laser panning method (range: HAX, 250 PP) that changes the reflectance and propagation speed by electrically opening the grading of the reflector (range: HAX, 250 PP)
Frequency aml by i, 2000pp1 or more, accuracy: accurate material heat) etc.! ! There was an intermediate point that it was troublesome, such as requiring .
本発明は、従来の技術の有するこのような問題点に鑑み
てなされたものであり、その目的とするところは、簡単
な方法で表面波の伝搬速度を変化させて共振周波数の調
整を行うことができる弾性表面波共振子の周波数調整法
を提供するらのである。The present invention has been made in view of these problems of the conventional technology, and its purpose is to adjust the resonant frequency by changing the propagation speed of a surface wave in a simple manner. provide a frequency tuning method for a surface acoustic wave resonator that allows for
［課題を解決するための手段］
上記目的を達成するために、本発明は、中央部分に励振
電極、該励振電極を挟んで左右に一対の反射器が夫々基
板の弾性表面波が伝搬する面に設置される弾性表面波共
振子において、前記弾性表面波が伝搬する面の反対側の
面からエツチングを行い、共振周波数を調整することを
特徴とするものである。[Means for Solving the Problems] In order to achieve the above object, the present invention has an excitation electrode in the central part, and a pair of reflectors on the left and right sides of the excitation electrode, each having a surface on which surface acoustic waves of the substrate propagate. In the surface acoustic wave resonator installed in the surface acoustic wave resonator, etching is performed from the surface opposite to the surface through which the surface acoustic waves propagate to adjust the resonant frequency.
［実施例］ 実施例について図面を参照して説明する。[Example] Examples will be described with reference to the drawings.
尚、以下の図面において、第２図と重複する部分は同一
番号を付してその説明は省略する。In the following drawings, parts that overlap with those in FIG. 2 are given the same numbers, and their explanations will be omitted.
第１図は本発明の具体的実施例を示す弾性表面波共振子
の断面構造図である。FIG. 1 is a cross-sectional structural diagram of a surface acoustic wave resonator showing a specific embodiment of the present invention.
第１図において、本発明の弾性表面波共振子Ａ、は、基
板１０の弾性表面波αが伝搬する而（ここでは表面）上
の中央部分に励振電極２を挟んで左右に一対の反射器３
が夫々設置され、共振周波数を調整するなめに、基板１
の弾性表面波が伝搬する面の反対側の血（ここでは矢印
βで示す裏面）にエツチングが施される。In FIG. 1, the surface acoustic wave resonator A of the present invention has a pair of reflectors on the left and right with an excitation electrode 2 in the center of the substrate 10 on which the surface acoustic wave α propagates (in this case, the surface). 3
are installed respectively, and in order to adjust the resonant frequency, the substrate 1
Etching is performed on the blood on the opposite side of the surface through which the surface acoustic waves propagate (in this case, the back surface indicated by arrow β).
ところで弾性表面波共振子に一般に使われているレーリ
ー波は、基板表面に振幅が集中する波動である。第２図
は本発明の説明に供する図であり、レーリー波の境界近
傍の相対振幅を示す。By the way, Rayleigh waves generally used in surface acoustic wave resonators are waves whose amplitude is concentrated on the substrate surface. FIG. 2 is a diagram for explaining the present invention, and shows the relative amplitude near the boundary of Rayleigh waves.
第２図において、横軸に相対振幅（ｚ＝０でＵ＝１００
とした場合、但しＵは伝搬方向の変位）をとり、縦軸に
波長λに対する厚み方向の位ＷＺ（Ｚ／λ）をとった時
の伝搬する表面波αのＵ。In Figure 2, the horizontal axis represents the relative amplitude (U = 100 at z = 0).
, where U is the displacement in the propagation direction), and the vertical axis is the position WZ (Z/λ) in the thickness direction with respect to the wavelength λ. U of the propagating surface wave α.
Ｗ（厚み方向の変位）の振幅特性を示す、第２図から、
波長＾の２倍程度の部分に表面波αのエネルギーが集中
していることが分る。従って、弾性表面波共振子の周波
数調整をするために、基板１０の裏面からエツチングし
て波動の振幅に影響を与えることで、表面波の伝搬速度
を変化させて、共振子の共振周波数を変化させることが
できる。From Figure 2, which shows the amplitude characteristics of W (displacement in the thickness direction),
It can be seen that the energy of the surface wave α is concentrated in a region approximately twice the wavelength ^. Therefore, in order to adjust the frequency of the surface acoustic wave resonator, etching is performed from the back surface of the substrate 10 to affect the wave amplitude, thereby changing the propagation speed of the surface wave and changing the resonant frequency of the resonator. can be done.
［発明の効果］
本発明は、以上説明したように基板の裏面からのエツチ
ングによるために、本来の弾性表面波の波動に与える影
響を小さく押えた周波数調整が可能となる上に、周波数
調整の感度が小さいので、微調整が可能となる、という
効果を奏する。[Effects of the Invention] As explained above, the present invention uses etching from the back side of the substrate, so it is possible to adjust the frequency with less influence on the original wave motion of surface acoustic waves. Since the sensitivity is low, fine adjustment is possible.
【図面の簡単な説明】
第１図は本発明の具体的実施例を示す弾性表面波共振子
の断面構造図、第２図は本発明の説明に供する図、第３
図は従来の弾性表面波共振子の構造図である。[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a cross-sectional structural diagram of a surface acoustic wave resonator showing a specific embodiment of the present invention, FIG. 2 is a diagram for explaining the present invention, and FIG.
The figure is a structural diagram of a conventional surface acoustic wave resonator.
Claims (1)
反射器が夫々基板の弾性表面波が伝搬する面に設置され
る弾性表面波共振子において、前記弾性表面波が伝搬す
る面の反対側の面からエッチングを行い、共振周波数を
調整することを特徴とする弾性表面波共振子の周波数調
整法。In a surface acoustic wave resonator in which an excitation electrode is provided at the center and a pair of reflectors on the left and right sides of the excitation electrode are installed on the surface of the substrate on which the surface acoustic waves propagate, the surfaces opposite to the surfaces on which the surface acoustic waves propagate are installed. A method for adjusting the frequency of a surface acoustic wave resonator, which is characterized by etching from the side surface and adjusting the resonance frequency.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21714988A JPH0265405A (en) | 1988-08-31 | 1988-08-31 | Frequency adjusting method for surface acoustic wave resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21714988A JPH0265405A (en) | 1988-08-31 | 1988-08-31 | Frequency adjusting method for surface acoustic wave resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0265405A true JPH0265405A (en) | 1990-03-06 |
Family
ID=16699626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21714988A Pending JPH0265405A (en) | 1988-08-31 | 1988-08-31 | Frequency adjusting method for surface acoustic wave resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0265405A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009269086A (en) * | 2008-04-08 | 2009-11-19 | Nippon Steel Corp | Apparatus and method for cooling hot rolling |
| US9061335B2 (en) | 2009-10-07 | 2015-06-23 | Nippon Steel & Sumitomo Metal Corporation | Cooling apparatus and cooling method for hot rolling |
-
1988
- 1988-08-31 JP JP21714988A patent/JPH0265405A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009269086A (en) * | 2008-04-08 | 2009-11-19 | Nippon Steel Corp | Apparatus and method for cooling hot rolling |
| US9061335B2 (en) | 2009-10-07 | 2015-06-23 | Nippon Steel & Sumitomo Metal Corporation | Cooling apparatus and cooling method for hot rolling |
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