JPH0265135U - - Google Patents

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Publication number
JPH0265135U
JPH0265135U JP14526188U JP14526188U JPH0265135U JP H0265135 U JPH0265135 U JP H0265135U JP 14526188 U JP14526188 U JP 14526188U JP 14526188 U JP14526188 U JP 14526188U JP H0265135 U JPH0265135 U JP H0265135U
Authority
JP
Japan
Prior art keywords
wheatstone bridge
pressure sensor
diaphragm membrane
gauge resistors
bridge circuits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14526188U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14526188U priority Critical patent/JPH0265135U/ja
Publication of JPH0265135U publication Critical patent/JPH0265135U/ja
Pending legal-status Critical Current

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  • Measuring Fluid Pressure (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本考案に係る圧力センサの一実施例
におけるホイートストンブリツジの実装構造を示
す平面図である。第２図は、同ホイートストンブ
リツジの回路を示す回路構成図である。第３図は
、同実施例における信号処理回路を示すブロツク
図である。第４図Ａ，Ｂは、従来の半導体圧力セ
ンサの一例を示す平面図および縦断面図である。 １…（１１０）面型半導体基板、２…ダイヤフ
ラム膜、３…第１のホイートストンブリツジ、４
…第２のホイートストンブリツジ、５，６…差動
増幅器、７…加算器、Ｌ…膜面境界線、ａ，ｂ，
ｃ，ｄ…第１のホイートストンブリツジのゲージ
抵抗、ａ′，ｂ′，ｃ′，ｄ′…第２のホイート
ストンブリツジのゲージ抵抗、Ｖ０１，Ｖ０２…
不平衡電圧。 FIG. 1 is a plan view showing a mounting structure of a Wheatstone bridge in an embodiment of a pressure sensor according to the present invention. FIG. 2 is a circuit configuration diagram showing the circuit of the same Wheatstone bridge. FIG. 3 is a block diagram showing a signal processing circuit in the same embodiment. FIGS. 4A and 4B are a plan view and a longitudinal sectional view showing an example of a conventional semiconductor pressure sensor. DESCRIPTION OF SYMBOLS 1... (110) plane semiconductor substrate, 2... Diaphragm film, 3... First Wheatstone bridge, 4
...Second Wheatstone bridge, 5, 6...Differential amplifier, 7...Adder, L...Membrane surface boundary line, a, b,
c, d... Gauge resistance of the first Wheatstone bridge, a', b', c', d'... Gauge resistance of the second Wheatstone bridge, V 01 , V 02 ...
Unbalanced voltage.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ダイヤフラム膜上のゲージ抵抗を以て構成され
た複数のホイートストンブリツジ回路を有する圧
力センサであつて、複数のホイートストンブリツ
ジ回路の相対応する各ゲージ抵抗は該ダイヤフラ
ム膜上に近接配置されており、各ホイートストン
ブリツジ回路の不平衡電圧を加算する加算器を備
えることを特徴とする圧力センサ。 The pressure sensor has a plurality of Wheatstone bridge circuits configured with gauge resistors on a diaphragm membrane, wherein each of the corresponding gauge resistors of the plurality of Wheatstone bridge circuits is arranged close to each other on the diaphragm membrane, and each A pressure sensor comprising an adder that adds unbalanced voltages of a Wheatstone bridge circuit.
JP14526188U 1988-11-07 1988-11-07 Pending JPH0265135U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14526188U JPH0265135U (en) 1988-11-07 1988-11-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14526188U JPH0265135U (en) 1988-11-07 1988-11-07

Publications (1)

Publication Number Publication Date
JPH0265135U true JPH0265135U (en) 1990-05-16

Family

ID=31413694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14526188U Pending JPH0265135U (en) 1988-11-07 1988-11-07

Country Status (1)

Country Link
JP (1) JPH0265135U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002243567A (en) * 2001-02-22 2002-08-28 Minebea Co Ltd Semiconductor type pressure sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002243567A (en) * 2001-02-22 2002-08-28 Minebea Co Ltd Semiconductor type pressure sensor

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