JPH0263145A - Resin-sealed type semiconductor device - Google Patents
Resin-sealed type semiconductor deviceInfo
- Publication number
- JPH0263145A JPH0263145A JP21435088A JP21435088A JPH0263145A JP H0263145 A JPH0263145 A JP H0263145A JP 21435088 A JP21435088 A JP 21435088A JP 21435088 A JP21435088 A JP 21435088A JP H0263145 A JPH0263145 A JP H0263145A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor element
- protective layer
- polyimide resin
- sealed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 229920001721 polyimide Polymers 0.000 claims abstract description 26
- 239000009719 polyimide resin Substances 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 239000011241 protective layer Substances 0.000 claims abstract description 19
- 239000000470 constituent Substances 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 4
- 238000007789 sealing Methods 0.000 abstract description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002253 acid Substances 0.000 abstract description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 abstract description 4
- 150000004985 diamines Chemical class 0.000 abstract description 4
- 239000002243 precursor Substances 0.000 abstract description 4
- 239000002798 polar solvent Substances 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000004952 Polyamide Substances 0.000 abstract 2
- 229920002647 polyamide Polymers 0.000 abstract 2
- 229920006122 polyamide resin Polymers 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 229920005575 poly(amic acid) Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、耐湿性、および半導体素子と封止樹脂との接
着性が改良された樹脂封止型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a resin-sealed semiconductor device with improved moisture resistance and adhesiveness between a semiconductor element and a sealing resin.
（従来の技術）
半導体素子表面は、湿気や不純物に極めて敏感であるた
め、樹脂等で封止し保護されている。(Prior Art) Since the surface of a semiconductor element is extremely sensitive to moisture and impurities, it is sealed and protected with resin or the like.
第２図は、このような従来の樹脂封止型半導体装置の断
面図である。 同図にみるように、半導体素子１はリー
ドフレーム４に固定され、半導体素子１のポンディング
パッド２と、リードフレーム４のリード４ａ 、４ｂと
が金、アルミニウム等の金属線３によって接続されてい
る。 そして、これらはエポキシ樹脂等の封止樹脂５で
封止され全体が固定されている。FIG. 2 is a sectional view of such a conventional resin-sealed semiconductor device. As shown in the figure, the semiconductor element 1 is fixed to a lead frame 4, and the bonding pads 2 of the semiconductor element 1 and the leads 4a and 4b of the lead frame 4 are connected by metal wires 3 made of gold, aluminum, etc. There is. These are sealed with a sealing resin 5 such as epoxy resin, and the whole is fixed.
従来から、封止樹脂５が素子の表面に直接することなく
、保護コートしたポリイミド樹脂を介して樹脂封止した
樹脂封止型半導体装置が知られている。 しかし、一般
のポリイミド樹脂は、概して半導体素子との接着性が悪
く、ハーメチック封止型と違って水を吸湿しやすい樹脂
封止型半導体装置においては、耐湿性に劣ることが大き
な問題であった。 そのため、半導体素子と接着剥離を
生じないようにカップリング剤処理等をあらかじめ施す
ことは、ある程度有効である。 しかしながら、カップ
リング剤処理をしてもまだ耐湿性は十分でなく、アルミ
ニウム配線など半導体素子の腐食しやすい部分が、水分
により断線したり、吸湿時に素子のリーク電流が増大す
る等の問題があった。Conventionally, resin-sealed semiconductor devices have been known in which the sealing resin 5 does not directly contact the surface of the element, but instead is resin-sealed via a polyimide resin coated with a protective coating. However, general polyimide resin generally has poor adhesion to semiconductor elements, and a major problem with resin-sealed semiconductor devices, which tend to absorb water unlike hermetic-sealed types, is that they have poor moisture resistance. . Therefore, it is somewhat effective to apply a coupling agent treatment or the like in advance to prevent adhesive separation from the semiconductor element. However, even after treatment with a coupling agent, moisture resistance is still insufficient, and there are problems such as wire breakage in parts of semiconductor devices that are prone to corrosion, such as aluminum wiring, due to moisture, and an increase in leakage current of devices when moisture is absorbed. Ta.
（発明が解決しようとする課題）
本発明は、上記の事情に鑑みてなされたもので、半導体
素子と封止樹脂との接着性、耐湿性に優れ、耐湿試験に
おいてリーク電流が少なく、しかも、腐食、断線等の問
題が起こりにくく、さらに半導体素子の表面の保護層に
より半導体製造工程における加工落ちのない樹脂封止型
半導体装置を提供しようとするものである。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and has excellent adhesiveness and moisture resistance between a semiconductor element and a sealing resin, and has low leakage current in a moisture resistance test. It is an object of the present invention to provide a resin-sealed semiconductor device that is less prone to problems such as corrosion and disconnection, and that is free from defects in processing during the semiconductor manufacturing process due to the protective layer on the surface of the semiconductor element.
［発明の構成］
（課題を解決するための手段）
本発明は、上記の目的を達成するために鋭意研究を重ね
た結果なされたもので、半導体素子表面に特定のポリイ
ミド樹脂による保護層を設けることによって、上記目的
が達成され、従来の問題点が解消されることを見いだし
、本発明を完成したものである。[Structure of the Invention] (Means for Solving the Problems) The present invention has been made as a result of intensive research to achieve the above object, and involves providing a protective layer made of a specific polyimide resin on the surface of a semiconductor element. The present invention has been completed based on the discovery that the above objects can be achieved and the conventional problems can be solved.
すなわち、本発明は、
半導体素子を樹脂封止してなる樹脂封止型半導体装置に
おいて、半導体素子表面に、一般式（但し式中、
ｎは整数を、それぞれ表す）
で示されるとともに、（Ａ）と（Ｂ）の構成要素のモル
比が
（Ａ）／ （Ｂ）＝９９／１〜７Ｇ／ ３Ｇであるポリ
イミド樹脂の保護層が形成され、該保護層を介し樹脂封
止してなることを特徴とする樹脂封止型半導体装置であ
る。That is, the present invention provides a resin-sealed semiconductor device in which a semiconductor element is sealed with resin, which is represented by the general formula (wherein n represents an integer) and (A) on the surface of the semiconductor element. ) and (B) in a molar ratio of (A)/(B)=99/1 to 7G/3G, and the resin is sealed through the protective layer. This is a resin-sealed semiconductor device characterized by:
本発明に用いるポリイミド樹脂は前記した一般式を有す
るもので、酸成分とジアミン成分とを反応させて得られ
る。 酸成分としては、Ｒ１が３．３”、 ４．４’−
ベンゾフェノンテトラカルボン酸、その無水物若しくは
低級アルキルエステルが用いられる。The polyimide resin used in the present invention has the general formula described above, and is obtained by reacting an acid component and a diamine component. As an acid component, R1 is 3.3", 4.4'-
Benzophenonetetracarboxylic acid, its anhydride or lower alkyl ester is used.
また、ジアミン成分としては、Ｒ２が（Ａ）である４、
４′−ジアミノ−３，３′−ジエチル−５，５′−ジメ
チルジフェニルメタン、及びＲ２が（Ｂ）である１、３
−ビス（γアミノプロピル） −１，１，３，３−テト
ラメチルジシロキサンの混合物が用いられる。 そして
（Ａ）と（Ｂ）の構成要素のモル比、（Ａ）／（Ｂ）は
９９／１〜７０／ ３０の範囲内とする。 モル比が７
０／ ３０未満であると、耐熱性が低下するため半田ジ
ャブ付は等の熱衝撃において接着性が低下し、また９９
／１を超えると、半導体素子表面との接着性が低下する
ので好ましくない。In addition, as the diamine component, 4 in which R2 is (A),
4'-diamino-3,3'-diethyl-5,5'-dimethyldiphenylmethane, and 1,3 in which R2 is (B)
A mixture of -bis(γaminopropyl)-1,1,3,3-tetramethyldisiloxane is used. The molar ratio of the constituent elements (A) and (B), (A)/(B), is within the range of 99/1 to 70/30. molar ratio is 7
If it is less than 0/30, the heat resistance will decrease, and the adhesion will decrease due to thermal shock such as those with solder jabs.
If it exceeds /1, the adhesion to the surface of the semiconductor element will deteriorate, which is not preferable.
ポリイミド樹脂を製造するには、まず、前述の所定割合
に混合したジアミン成分を非プロトン系極性溶剤に溶解
し、次に前述の酸成分を加え、２０〜５０℃で１〜１０
時間反応させて、ポリイミド樹脂の前駆体であるポリア
ミド酸樹脂を得る。 これを無水酢酸、ピリジン系等に
よって化学的に脱水環化させるか１５０〜２３０℃で熱
的に環化させてポリイミド樹脂を製造する。To produce a polyimide resin, first, the diamine component mixed in the predetermined ratio described above is dissolved in an aprotic polar solvent, then the acid component described above is added, and the mixture is heated at 20 to 50°C for 1 to 10%.
The reaction is carried out for a period of time to obtain a polyamic acid resin which is a precursor of a polyimide resin. This is chemically dehydrated and cyclized using acetic anhydride, pyridine, etc., or thermally cyclized at 150 to 230°C to produce a polyimide resin.
ポリイミド樹脂によって半導体素子表面に保護層を形成
するには、ポリイミド樹脂の前駆体であるポリアミド酸
又はポリイミド樹脂を半導体素子表面に塗布、加熱硬化
して保護層を形成する。To form a protective layer on the surface of a semiconductor element using polyimide resin, polyamic acid or polyimide resin, which is a precursor of polyimide resin, is applied to the surface of the semiconductor element and cured by heating to form the protective layer.
ポリイミド樹脂の前駆体であるポリアミド酸樹脂の樹脂
溶液を半導体素子表面に塗布する。 ここで用いる溶剤
としては、ジメチルポルムアミド、ジメチルアセトアミ
ド、Ｎ−メチル−２−ピロリド゛ン等の非プロトン系極
性溶剤が最適で、その他ジエチレングリコールジメチル
エーテル、０−クレゾール、トクレゾール、ｐ−クレゾ
ール、０−タロロフェノール、１−タロロフェノール、
ｐ−タロロフェノール等が挙げられ、これらは単独もし
くは２種以上の混合系として使用する。 この樹脂溶液
は必要に応じて無機質充填剤、顔料、カーボンブラック
、チクソ刑、消泡剤、カップリング剤等を配合すること
ができる。 こうして調製したポリアミド酸樹脂溶液を
半導体素子表面に塗布し、１２０〜３５０℃の温度で数
段階に分けて数時間焼き付けて保護層を形成する。 化
学閉環したポリイミド樹脂の場合は、ポリアミド酸樹脂
の場合と同様に樹脂溶液とし、また同様に必要に応じて
池の成分を添加配合して樹脂溶液とし、半導体素子表面
に塗布し、１００〜２００℃で数時間焼き付けて保護層
を形成する。 その後、エポキシ樹脂、ジアリルフタレ
ート樹脂、フェノール樹脂、不飽和ポリエステル樹脂、
シリコーン樹脂等の成形材料で注形、トランスファー成
形、射出成形等により ０．５〜５１１程度の厚さにモ
ールドして樹脂封止型半導体装置を製造する。A resin solution of polyamic acid resin, which is a precursor of polyimide resin, is applied to the surface of the semiconductor element. As the solvent used here, aprotic polar solvents such as dimethylpolamide, dimethylacetamide, and N-methyl-2-pyrrolidone are most suitable; in addition, diethylene glycol dimethyl ether, 0-cresol, tocresol, p-cresol, -talolophenol, 1-talolophenol,
Examples include p-talolophenol, which may be used alone or as a mixture of two or more. This resin solution may contain inorganic fillers, pigments, carbon black, thixotropic agents, antifoaming agents, coupling agents, etc., as required. The polyamic acid resin solution thus prepared is applied to the surface of the semiconductor element and baked in several stages at a temperature of 120 to 350° C. for several hours to form a protective layer. In the case of chemically ring-closed polyimide resin, make it into a resin solution in the same way as in the case of polyamic acid resin, and add and blend the same ingredients as necessary to make the resin solution, apply it to the surface of the semiconductor element, and apply it to the surface of the semiconductor element. Bake for several hours at ℃ to form a protective layer. After that, epoxy resin, diallyl phthalate resin, phenolic resin, unsaturated polyester resin,
A resin-sealed semiconductor device is manufactured by molding with a molding material such as silicone resin by casting, transfer molding, injection molding, etc. to a thickness of about 0.5 to 511 mm.
（作用）
本発明に係るポリイミド樹脂を使用したことによって半
導体素子表面とポリイミド樹脂との接着性が良くなり、
素子の周辺から湿気を吸収することがなく耐湿性が向上
し、製造工程中の信頼性も向上する。(Function) By using the polyimide resin according to the present invention, the adhesiveness between the semiconductor element surface and the polyimide resin is improved,
Moisture resistance is improved because moisture is not absorbed from the periphery of the device, and reliability during the manufacturing process is also improved.
（実施例） 次に本発明を実施例によって説明する。(Example) Next, the present invention will be explained by examples.
第１ａ図に示すように、半導体素子１の表面にポリイミ
ド樹脂をスピンナーを用いて硬化後の膜厚が１〜１０μ
ｍとなるように塗布し、９５℃で５分間加熱後、１５０
℃で２時間加熱する。 こうして得られたポリイミド樹
脂表面に、フォトレジストを塗布し、乾燥後に保護層６
のパターンを露光する。 露光したものを現像、リンス
、乾燥し、ポンディングパッド２やその他年必要な部分
をヒドラジン等でエツチング除去する。 エツチング終
了後リンスして乾燥し、その後レジストを剥離して再度
リンス乾燥することによってポリイミド樹脂の保護層６
を形成した。 こうして得られた半導体素子を使用して
樹脂封止型半導体装置が！＠！遺される。 すなわち、
第１ｂ図に示すようにポリイミド樹脂による保護層６で
保護された半導体素子１はリードフレーム４に固定され
、半導体素子１のポンディングパッド２はリード４ａ
４ｂに金属線３によって接続されて、エポキシ樹脂５
で封止される。 ここでポンディングパッド２に樹脂を
コートしなかった理由は、金属線３を接続させるボンデ
ィング工程があることと、エポキシ樹脂５とポリイミド
樹脂層との熱膨脹係数の差に起因する事故が発生するお
それがあるからである。As shown in FIG. 1a, a polyimide resin is applied to the surface of the semiconductor element 1 using a spinner so that the film thickness after curing is 1 to 10 μm.
m, and after heating at 95℃ for 5 minutes,
Heat at ℃ for 2 hours. A photoresist is applied to the surface of the polyimide resin obtained in this way, and after drying, a protective layer 6 is applied.
pattern. The exposed material is developed, rinsed and dried, and the bonding pad 2 and other necessary parts are removed by etching with hydrazine or the like. After etching is completed, the protective layer 6 of polyimide resin is formed by rinsing and drying, then peeling off the resist and rinsing and drying again.
was formed. A resin-sealed semiconductor device is made using the semiconductor element thus obtained! @! be left behind. That is,
As shown in FIG. 1b, the semiconductor element 1 protected by a protective layer 6 made of polyimide resin is fixed to a lead frame 4, and the bonding pads 2 of the semiconductor element 1 are connected to the leads 4a.
4b connected by metal wire 3 to epoxy resin 5
is sealed. The reason why the bonding pad 2 was not coated with resin is that there is a bonding process to connect the metal wire 3, and there is a risk of an accident occurring due to the difference in coefficient of thermal expansion between the epoxy resin 5 and the polyimide resin layer. This is because there is.
このようにして製造された樹脂封止型半導体装置につい
て信頼性試験を行ったところ、耐湿性について １２５
℃の飽和水蒸気中で８００時間以上の高信頼性が得られ
、さらに装置製造工程における不良もほとんどないこと
が確認された。When a reliability test was conducted on the resin-sealed semiconductor device manufactured in this way, the moisture resistance was found to be 125.
It was confirmed that high reliability was obtained for more than 800 hours in saturated steam at ℃, and there were almost no defects in the device manufacturing process.
［発明の効果］
以上説明したように、本発明の樹脂封止型半導体装置は
、従来のものと異なり、特定のポリイミド樹脂を用いた
ことによって、半導体素子表面と保護層、及び封止樹脂
と保護層との接着性が改善され、極めて優れた耐湿性を
得ることができる。[Effects of the Invention] As explained above, unlike conventional devices, the resin-sealed semiconductor device of the present invention uses a specific polyimide resin, so that the surface of the semiconductor element, the protective layer, and the sealing resin can be bonded to each other. Adhesion with the protective layer is improved and extremely excellent moisture resistance can be obtained.
そして腐食、断線もなくなり、半導体装置の製造工程に
おける加工落ちも少なくなり、高信頼性の半導体装置を
製造することができるものである。Corrosion and disconnection are also eliminated, and defects in processing during the semiconductor device manufacturing process are reduced, making it possible to manufacture highly reliable semiconductor devices.
第１ａ図は本発明に係る半導体素子の平面図、第１ｂ図
は第１ａ図の半導体素子を使用した本発明の樹脂封止型
半導体装！の一例を示す断面図、第２図は従来の樹脂封
止型半導体装置の断面図である。
１・・・半導体素子、 ２・・・ポンディングパッド、
３・・・金属線、 ４，４ａ、４ｂ・・・リードフレー
ム、５・・・封止樹脂、 ６・・・保護層（ポリイミド
樹脂）。
第１ａ図
第１ｂ図FIG. 1a is a plan view of a semiconductor element according to the present invention, and FIG. 1b is a resin-sealed semiconductor device of the present invention using the semiconductor element of FIG. 1a! FIG. 2 is a cross-sectional view of a conventional resin-sealed semiconductor device. 1... Semiconductor element, 2... Bonding pad,
3... Metal wire, 4, 4a, 4b... Lead frame, 5... Sealing resin, 6... Protective layer (polyimide resin). Figure 1a Figure 1b
Claims (1)
置において、半導体素子表面に、一般式▲数式、化学式
、表等があります▼ （但し式中、 Ｒ＾１は▲数式、化学式、表等があります▼を、 Ｒ＾２は（Ａ）▲数式、化学式、表等があります▼およ
び （Ｂ）▲数式、化学式、表等があります▼を、 ｎは整数を、それぞれ表す） で示されるとともに、（Ａ）と（Ｂ）の構成要素のモル
比が （Ａ）／（Ｂ）＝９９／１〜７０／３０ であるポリイミド樹脂の保護層が形成され、該保護層を
介し樹脂封止してなることを特徴とする樹脂封止型半導
体装置。[Claims] 1. In a resin-sealed semiconductor device in which a semiconductor element is sealed with resin, the surface of the semiconductor element has a general formula ▲a mathematical formula, a chemical formula, a table, etc.▼ (However, in the formula, R^1 is ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, R^2 is (A) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ and (B) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, n is an integer, A protective layer of polyimide resin is formed in which the molar ratio of the constituent elements of (A) and (B) is (A)/(B) = 99/1 to 70/30, respectively. A resin-sealed semiconductor device characterized by being resin-sealed through layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21435088A JPH0263145A (en) | 1988-08-29 | 1988-08-29 | Resin-sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21435088A JPH0263145A (en) | 1988-08-29 | 1988-08-29 | Resin-sealed type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263145A true JPH0263145A (en) | 1990-03-02 |
Family
ID=16654315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21435088A Pending JPH0263145A (en) | 1988-08-29 | 1988-08-29 | Resin-sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263145A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282558A (en) * | 1988-09-20 | 1990-03-23 | Toshiba Chem Corp | Resin sealed semiconductor device |
| US5476003A (en) * | 1993-10-05 | 1995-12-19 | Robert Bosch Gmbh | Measuring sensor for determining gas compositions |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59219330A (en) * | 1983-05-18 | 1984-12-10 | オーシージー マイクロエレクトロニク マテリアルズ インク． | Polyimide, manufacture and use |
| JPS61141735A (en) * | 1984-11-16 | 1986-06-28 | チバ−ガイギ− ア−ゲ− | Polyimides, its production and use, tetracarboxilic acids and their derivatives |
| JPS61236829A (en) * | 1985-04-11 | 1986-10-22 | チバ‐ガイギー アーゲー | Coated material and its utilization |
| JPS6256948A (en) * | 1985-09-04 | 1987-03-12 | チバ−ガイギ− アクチエンゲゼルシヤフト | Cover material |
| JPS6327833A (en) * | 1986-07-22 | 1988-02-05 | Asahi Chem Ind Co Ltd | Method for forming image having heat-resistance |
-
1988
- 1988-08-29 JP JP21435088A patent/JPH0263145A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59219330A (en) * | 1983-05-18 | 1984-12-10 | オーシージー マイクロエレクトロニク マテリアルズ インク． | Polyimide, manufacture and use |
| JPS61141735A (en) * | 1984-11-16 | 1986-06-28 | チバ−ガイギ− ア−ゲ− | Polyimides, its production and use, tetracarboxilic acids and their derivatives |
| JPS61236829A (en) * | 1985-04-11 | 1986-10-22 | チバ‐ガイギー アーゲー | Coated material and its utilization |
| JPS6256948A (en) * | 1985-09-04 | 1987-03-12 | チバ−ガイギ− アクチエンゲゼルシヤフト | Cover material |
| JPS6327833A (en) * | 1986-07-22 | 1988-02-05 | Asahi Chem Ind Co Ltd | Method for forming image having heat-resistance |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282558A (en) * | 1988-09-20 | 1990-03-23 | Toshiba Chem Corp | Resin sealed semiconductor device |
| US5476003A (en) * | 1993-10-05 | 1995-12-19 | Robert Bosch Gmbh | Measuring sensor for determining gas compositions |
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