JPH0263144A - Resin-sealed type semiconductor device - Google Patents
Resin-sealed type semiconductor deviceInfo
- Publication number
- JPH0263144A JPH0263144A JP21434988A JP21434988A JPH0263144A JP H0263144 A JPH0263144 A JP H0263144A JP 21434988 A JP21434988 A JP 21434988A JP 21434988 A JP21434988 A JP 21434988A JP H0263144 A JPH0263144 A JP H0263144A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor element
- protective layer
- sealed
- polyimide resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 229920001721 polyimide Polymers 0.000 claims abstract description 22
- 239000011347 resin Substances 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims abstract description 22
- 239000009719 polyimide resin Substances 0.000 claims abstract description 21
- 239000011241 protective layer Substances 0.000 claims abstract description 19
- 239000000126 substance Substances 0.000 claims 6
- 238000007789 sealing Methods 0.000 abstract description 9
- 239000002253 acid Substances 0.000 abstract description 6
- 239000002243 precursor Substances 0.000 abstract description 5
- 150000004985 diamines Chemical class 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 239000002798 polar solvent Substances 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 239000004952 Polyamide Substances 0.000 abstract 2
- 229920002647 polyamide Polymers 0.000 abstract 2
- 239000000470 constituent Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920005575 poly(amic acid) Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 125000005907 alkyl ester group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- MILSYCKGLDDVLM-UHFFFAOYSA-N 2-phenylpropan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)C1=CC=CC=C1 MILSYCKGLDDVLM-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical class C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- -1 γaminopropyl Chemical group 0.000 description 1
Landscapes
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、耐湿性、および半導体素子と封止樹脂との接
着性が改良された樹脂封止型半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a resin-sealed semiconductor device with improved moisture resistance and adhesiveness between a semiconductor element and a sealing resin.
（従来の技術）
半導体素子表面は、湿気や不純物に極めて敏感であるた
め、樹脂等で封止し保護されている。(Prior Art) Since the surface of a semiconductor element is extremely sensitive to moisture and impurities, it is sealed and protected with resin or the like.
第２図は、このような従来の樹脂封止型半導体装置の断
面図である。 同図にみるように、半導体素子１はリー
ドフレーム４に固定され、半導体素子１のポンディング
パッド２と、リードフレーム４のリード４ａ 、４ｂと
が金、アルミニウム等の金属線３によって接続されてい
る。 そして、これらはエポキシ樹脂等の封止樹脂５で
封止され全体が固定されている。FIG. 2 is a sectional view of such a conventional resin-sealed semiconductor device. As shown in the figure, the semiconductor element 1 is fixed to a lead frame 4, and the bonding pads 2 of the semiconductor element 1 and the leads 4a and 4b of the lead frame 4 are connected by metal wires 3 made of gold, aluminum, etc. There is. These are sealed with a sealing resin 5 such as epoxy resin, and the whole is fixed.
従来から、封止樹脂５が素子の表面に直接することなく
、保護コートしたポリイミド樹脂を介して樹脂封止した
樹脂封止型半導体装置が知られている。 しかし、一般
のポリイミド樹脂は、概して半導体素子との接着性が悪
く、ハーメチック封止型と違って水を吸湿しやすい樹脂
封止型半導体装置においては、耐湿性に劣ることが大き
な問題であった。 そのため、半導体素子と接着剥離を
生じないようにカップリング剤処理等をあらかじめ施す
ことは、ある程度有効である。 しかしながら、カップ
リング剤処理をしてもまだ耐湿性は十分でなく、アルミ
ニウム配線など半導体素子の腐食しやすい部分が、水分
により断線したり、吸湿時に素子のリーク電流が増大す
る等の問題があった。Conventionally, resin-sealed semiconductor devices have been known in which the sealing resin 5 does not directly contact the surface of the element, but instead is resin-sealed via a polyimide resin coated with a protective coating. However, general polyimide resin generally has poor adhesion to semiconductor elements, and a major problem with resin-sealed semiconductor devices, which tend to absorb water unlike hermetic-sealed types, is that they have poor moisture resistance. . Therefore, it is somewhat effective to apply a coupling agent treatment or the like in advance to prevent adhesive separation from the semiconductor element. However, even after treatment with a coupling agent, moisture resistance is still insufficient, and there are problems such as wire breakage in parts of semiconductor devices that are prone to corrosion, such as aluminum wiring, due to moisture, and an increase in leakage current of devices when moisture is absorbed. Ta.
（発明が解決しようとする課題）
本発明は、上記の事情に鑑みてなされたもので、半導体
素子と封止樹脂との接着性、耐湿性に優れ、耐湿試験に
おいてリーク電流が少なく、しかも、腐食、断線等の問
題が起こりにくく、さらに半導体素子の表面の保護層に
より半導体製造工程における加工落ちのない樹脂封止型
半導体装置を提供しようとするものである。(Problems to be Solved by the Invention) The present invention has been made in view of the above circumstances, and has excellent adhesiveness and moisture resistance between a semiconductor element and a sealing resin, and has low leakage current in a moisture resistance test. It is an object of the present invention to provide a resin-sealed semiconductor device that is less prone to problems such as corrosion and disconnection, and that is free from defects in processing during the semiconductor manufacturing process due to the protective layer on the surface of the semiconductor element.
［発明の構成］
（課題を解決するための手段）
本発明は、上記の目的を達成するために鋭意研究を重ね
た結果なされたもので、半導体素子表面に特定のポリイ
ミド樹脂による保護層を設けることによって、上記目的
が達成され、従来の問題点が解消されることを見いだし
、本発明を完成したものである。[Structure of the Invention] (Means for Solving the Problems) The present invention has been made as a result of intensive research to achieve the above object, and involves providing a protective layer made of a specific polyimide resin on the surface of a semiconductor element. The present invention has been completed based on the discovery that the above objects can be achieved and the conventional problems can be solved.
すなわち、本発明は（
半導体素子を樹脂封止してなる樹脂封止型半導体装置に
おいて、半導体素子表面に、一般式（但し式中、
ｎは整数を、それぞれ表す）
で示されるとともに、（Ａ）ないしくＥ）の構成要素の
モル比が
（Ａ）／（Ｂ）＝９９／１〜３０／ ７０゜（Ｃ） ／
（Ｄ ） ＝９９／１〜５０／ ５０、かつ［（Ｃ）
モ（Ｄ ） ］ ／ （Ｅ ） ＝９９／１〜７０／
３０であるポリイミド樹脂の保護層が形成され、該保護
層を介し樹脂封止してなることを特徴とする樹脂封止型
半導体装置である。That is, the present invention provides (a resin-sealed semiconductor device in which a semiconductor element is sealed with resin), which is represented by the general formula (where n represents an integer, respectively) on the surface of the semiconductor element, and (A ) or E) has a molar ratio of (A)/(B)=99/1 to 30/70°(C)/
(D) = 99/1 to 50/50, and [(C)
Mo(D) ] / (E) =99/1~70/
This is a resin-sealed semiconductor device characterized in that a protective layer of polyimide resin No. 30 is formed and resin-sealed through the protective layer.
本発明に用いるポリイミド樹脂は前記した一般式を有す
るもので、酸成分とジアミン成分とを反応させて得られ
る。 酸成分としては、Ｒ１が（Ａ）である３、３’、
４．４”−ベンゾフェノンテトラカルボン酸、その無
水物若しくは低級アルキルエステル、及びＲ１が（Ｂ）
である１、２，４．５−ベンゼンテトラカルボン酸、そ
の無水物若しくは低級アルキルエステルの混合物が用い
られる。The polyimide resin used in the present invention has the general formula described above, and is obtained by reacting an acid component and a diamine component. As the acid component, 3,3' where R1 is (A),
4.4”-benzophenonetetracarboxylic acid, its anhydride or lower alkyl ester, and R1 is (B)
A mixture of 1,2,4,5-benzenetetracarboxylic acid, its anhydride or lower alkyl ester is used.
また、ジアミン成分としては、Ｒ２が（Ｃ）である４、
４′−ジアミノジフェニルエーテル、Ｒ２が（Ｄ）であ
る４４゛−ジアミノ−３，３′−ジエチル−５゜５′−
ジメチルジフェニルメタン、及びＲ２が（Ｅ）である１
、３−ビス（γアミノプロピル） −１，１，３，３−
テトラメチルジシロキサンの混合物が用いられる。In addition, as the diamine component, 4 in which R2 is (C),
4'-diaminodiphenyl ether, 44'-diamino-3,3'-diethyl-5'5'- where R2 is (D)
dimethyldiphenylmethane, and 1 in which R2 is (E)
, 3-bis(γaminopropyl) -1,1,3,3-
A mixture of tetramethyldisiloxanes is used.
これらの各成分の割合は次のとおりである。The proportions of each of these components are as follows.
（Ａ）／（Ｂ）のモル比は９９／１〜３０／ ７０の範
囲内とする。 モル比が３０／ ７０末溝であると半導
体素子表面や封止樹脂との接着性が低下し、また９９／
１を超えると溶剤によるエツチング性が悪化するので好
ましくない、 （Ｃ）／（Ｄ＞のモル比は９９／１
〜５０１５０とする。 モル比が５０１５０未満である
とポリイミドの耐熱性が低下し、また、９９／１を超え
ると封止樹脂との接着性が低下するので好ましくない、
さらに［（Ｃ）モ（Ｄ）］／（Ｅ）のモル比は９９／
１〜７０／ ３０とする。 モル比が７０／ ３０未満
であると耐熱性が低下するため半田ショック等の熱衝撃
において接着性が低下し、また、９９／１を超えると半
導体素子表面との接着性が低下するので好ましくない。The molar ratio of (A)/(B) is within the range of 99/1 to 30/70. If the molar ratio is 30/70, the adhesion to the semiconductor element surface or the sealing resin will decrease;
If it exceeds 1, the etching property with the solvent will deteriorate, which is undesirable.The molar ratio of (C)/(D> is 99/1.
~50150. If the molar ratio is less than 50,150, the heat resistance of the polyimide will decrease, and if it exceeds 99/1, the adhesiveness with the sealing resin will decrease, which is not preferable.
Furthermore, the molar ratio of [(C)mo(D)]/(E) is 99/
1 to 70/30. If the molar ratio is less than 70/30, the heat resistance will decrease, resulting in a decrease in adhesion in thermal shocks such as solder shock, and if it exceeds 99/1, the adhesiveness with the surface of the semiconductor element will decrease, which is not preferable. .
ポリイミド樹脂を製造するには、まず、前述の所定割合
に混合したジアミン成分を非プロトン系極性溶剤に溶解
し、次に前述の所定割合に混合した酸成分を加え、−２
０〜５０℃で１〜１０時間反応させて、ポリイミド樹脂
の前駆体であるポリアミド酸樹脂を得る。To produce polyimide resin, first, the diamine component mixed in the predetermined ratio described above is dissolved in an aprotic polar solvent, then the acid component mixed in the predetermined ratio described above is added, and -2
The reaction is carried out at 0 to 50°C for 1 to 10 hours to obtain a polyamic acid resin which is a precursor of a polyimide resin.
半導体素子表面にポリイミド樹脂の保護層を形成するに
は、ポリイミド樹脂の前駆体である上記ポリアミド酸樹
脂の樹脂溶液を半導体素子表面に塗布する。 ここで用
いる溶剤としては、ジメチルホルムアミド、ジメチルア
セトアミド、Ｎ−メチル−２−ピロリドン等の非プロト
ン系極性溶剤が最適である。 そして、これらの溶剤は
単独又は２種以上の混合系として使用される。To form a protective layer of polyimide resin on the surface of a semiconductor element, a resin solution of the polyamic acid resin, which is a precursor of polyimide resin, is applied to the surface of the semiconductor element. As the solvent used here, aprotic polar solvents such as dimethylformamide, dimethylacetamide, and N-methyl-2-pyrrolidone are most suitable. These solvents may be used alone or as a mixture of two or more.
このようにして調製したポリアミド酸樹脂溶液を半導体
素子表面に塗布し、１２０〜３５０ ’Ｃの温度で、数
段階に分けて数時間焼き付けて、保護層を形成する。
その後、エポキシ樹脂、ジアリルフタレート樹脂、フェ
ノール樹脂、不飽和ポリエステル樹脂、シリコーン樹脂
等の成形材料で、常用の注形、トランスファー成形、射
出成形等により０．５〜５ ｎＩｍ程度の厚さにモール
ドして樹脂封止型半導体装置を製造する。The polyamic acid resin solution thus prepared is applied to the surface of the semiconductor element and baked in several stages for several hours at a temperature of 120 to 350'C to form a protective layer.
Thereafter, it is molded to a thickness of about 0.5 to 5 nIm using a molding material such as epoxy resin, diallyl phthalate resin, phenol resin, unsaturated polyester resin, or silicone resin by conventional casting, transfer molding, injection molding, etc. A resin-sealed semiconductor device is manufactured using the same method.
（作用）
本発明に係るポリイミド樹脂を使用したことによって、
半導体素子表面とポリイミド樹脂との接着性が良くなり
、素子の周辺から湿気を吸収することがなく耐湿性が向
上し、製造工程中の信頼性も向上する。(Function) By using the polyimide resin according to the present invention,
Adhesion between the surface of the semiconductor element and the polyimide resin is improved, moisture is not absorbed from the periphery of the element, moisture resistance is improved, and reliability during the manufacturing process is also improved.
（実施例） 次に、本発明を実施例によって説明する。(Example) Next, the present invention will be explained by examples.
第１ａ図に示すように、半導体素子１の表面にポリイミ
ド樹脂の前駆体を、スピンナーを用いて硬化後の膜厚が
１〜１０μｍとなるように塗布し、９５℃で５分間加熱
後、さらに１７０℃で６０分間加熱する。 こうして得
られた前駆体樹脂表面にはフォトレジストを塗布し、乾
燥後に保護層６のパターンを露光する。 露光したもの
を現像、リンス、乾燥し、ポンディングパッド２やその
地下必要な部分をヒドラジン等でエツチング除去する。As shown in FIG. 1a, a polyimide resin precursor is coated on the surface of the semiconductor element 1 using a spinner so that the film thickness after curing is 1 to 10 μm, and after heating at 95° C. for 5 minutes, Heat at 170°C for 60 minutes. A photoresist is applied to the surface of the precursor resin thus obtained, and after drying, the pattern of the protective layer 6 is exposed. The exposed material is developed, rinsed and dried, and the bonding pad 2 and the necessary parts underground are removed by etching with hydrazine or the like.
エツチング終了後リンスして乾燥し、その後レジスト
を剥離して再度リンス乾燥する。 こうして保護層６の
パターンを形成した素子を、さらに２５０℃で３０分間
加熱後、３０分で３００℃に昇温しそのまま３０分間保
持した後、９０分間で１５０℃まで温度を下げてポリイ
ミド樹脂の保護層６を形成した。After etching, rinse and dry, then peel off the resist and rinse and dry again. The element on which the pattern of the protective layer 6 was formed was further heated at 250°C for 30 minutes, then raised to 300°C in 30 minutes, held at that temperature for 30 minutes, and then lowered to 150°C in 90 minutes to form a polyimide resin. A protective layer 6 was formed.
この半導体素子を使用して樹脂封止型半導体装置が製造
される。 すなわち、第１ｂ図に示すようにポリイミド
樹脂による保護層６で保護された半導体素子１はリード
フレーム４に固定され、半導体素子１のポンディングパ
ッド２はリード４ａ。A resin-sealed semiconductor device is manufactured using this semiconductor element. That is, as shown in FIG. 1b, the semiconductor element 1 protected by a protective layer 6 made of polyimide resin is fixed to a lead frame 4, and the bonding pads 2 of the semiconductor element 1 are connected to the leads 4a.
４ｂに金属線３によって接続され、エポキシ樹脂５で封
止される。 ここでポンディングパッド２に樹脂をコー
トしなかった理由は、金属線３を接続させるボンディン
グ工程があることと、エポキシ樹脂５とポリイミド樹脂
層との熱膨脹係数の差に起因する事故が発生するおそれ
があるからである。 このようにして製造された樹脂封
止型半導体装置について信頼性試験を行ったところ、耐
湿性について １２５℃の飽和水蒸気中で８００時間以
上の高信頼性が得られ、さらに装置製造工程における不
良もほとんどないことが確認された。4b by a metal wire 3 and sealed with an epoxy resin 5. The reason why the bonding pad 2 was not coated with resin is that there is a bonding process to connect the metal wire 3, and there is a risk of an accident occurring due to the difference in coefficient of thermal expansion between the epoxy resin 5 and the polyimide resin layer. This is because there is. When we conducted a reliability test on the resin-sealed semiconductor device manufactured in this way, we found that it had high reliability in moisture resistance for over 800 hours in saturated steam at 125°C, and there were no defects in the device manufacturing process. It was confirmed that there were almost no
［発明の効果］
以上説明したように、本発明の樹脂刺止型半導体装置は
、従来のものと異なり、特定のポリイミド樹脂を用いた
ことによって、半導体素子表面と保護層、及び封止樹脂
と保護層との接着性が改善され、極めて優れた耐湿性を
得ることができる。[Effects of the Invention] As explained above, unlike conventional devices, the resin-embedded semiconductor device of the present invention uses a specific polyimide resin, so that the surface of the semiconductor element, the protective layer, and the sealing resin can be bonded to each other. Adhesion with the protective layer is improved and extremely excellent moisture resistance can be obtained.
そして、腐食、断線もなくなり、半導体装置の製造工程
における加工落ちも少なくなり、高信頼性の半導体装置
を製造することができるものである。Further, there is no corrosion or wire breakage, and there are fewer defects in the manufacturing process of semiconductor devices, making it possible to manufacture highly reliable semiconductor devices.
第１ａ図は本発明に係る半導体素子の平面図、第１ｂ図
は第１ａ図の半導体素子を使用した本発明の樹脂封止型
半導体装置の一例を示す断面図、第２図は従来の樹脂封
止型半導体装置の断面図である。
１・・・半導体素子、 ２・・・ポンディングパッド、
３・・・金属線、 ４．４ａ 、４ｂ・・・リードフレ
ーム、５・・・封止樹脂、 ６・・・保護層（ポリイミ
ド樹脂）。FIG. 1a is a plan view of a semiconductor element according to the present invention, FIG. 1b is a sectional view showing an example of a resin-sealed semiconductor device of the present invention using the semiconductor element of FIG. 1a, and FIG. 2 is a conventional resin-encapsulated semiconductor device. FIG. 2 is a cross-sectional view of a sealed semiconductor device. 1... Semiconductor element, 2... Bonding pad,
3... Metal wire, 4.4a, 4b... Lead frame, 5... Sealing resin, 6... Protective layer (polyimide resin).
Claims (1)
置において、半導体素子表面に、一般式▲数式、化学式
、表等があります▼ （但し式中、 Ｒ＾１は（Ａ）▲数式、化学式、表等があります▼およ
び （Ｂ）▲数式、化学式、表等があります▼を、 Ｒ＾２は（Ｃ）▲数式、化学式、表等があります▼、 （Ｄ）▲数式、化学式、表等があります▼および （Ｅ）▲数式、化学式、表等があります▼を、 ｎは整数を、それぞれ表す） で示されるとともに、（Ａ）ないし（Ｅ）の構成要素の
モル比が （Ａ）／（Ｂ）＝９９／１〜３０／７０、 （Ｃ）／（Ｄ）＝９９／１〜５０／５０、かつ［（Ｃ）
＋（Ｄ）］／（Ｅ）＝９９／１〜７０／３０であるポリ
イミド樹脂の保護層が形成され、該保護層を介し樹脂封
止してなることを特徴とする樹脂封止型半導体装置。[Claims] 1. In a resin-sealed semiconductor device in which a semiconductor element is sealed with resin, the surface of the semiconductor element has a general formula ▲a mathematical formula, a chemical formula, a table, etc.▼ (However, in the formula, R^1 is (A) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ and (B) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, R^2 is (C) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼, (D) ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ and (E) ▲ There are mathematical formulas, chemical formulas, tables, etc. The molar ratio is (A)/(B) = 99/1 to 30/70, (C)/(D) = 99/1 to 50/50, and [(C)
+(D)]/(E)=99/1 to 70/30, a resin-sealed semiconductor device comprising a polyimide resin protective layer formed thereon and resin-sealed through the protective layer. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21434988A JPH0263144A (en) | 1988-08-29 | 1988-08-29 | Resin-sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21434988A JPH0263144A (en) | 1988-08-29 | 1988-08-29 | Resin-sealed type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263144A true JPH0263144A (en) | 1990-03-02 |
Family
ID=16654296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21434988A Pending JPH0263144A (en) | 1988-08-29 | 1988-08-29 | Resin-sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263144A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02101764A (en) * | 1988-10-08 | 1990-04-13 | Toshiba Chem Corp | Resin seal type semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59219330A (en) * | 1983-05-18 | 1984-12-10 | オーシージー マイクロエレクトロニク マテリアルズ インク． | Polyimide, manufacture and use |
| JPS61141735A (en) * | 1984-11-16 | 1986-06-28 | チバ−ガイギ− ア−ゲ− | Polyimides, its production and use, tetracarboxilic acids and their derivatives |
| JPS61236829A (en) * | 1985-04-11 | 1986-10-22 | チバ‐ガイギー アーゲー | Coated material and its utilization |
| JPS6256948A (en) * | 1985-09-04 | 1987-03-12 | チバ−ガイギ− アクチエンゲゼルシヤフト | Cover material |
| JPS6327833A (en) * | 1986-07-22 | 1988-02-05 | Asahi Chem Ind Co Ltd | Method for forming image having heat-resistance |
-
1988
- 1988-08-29 JP JP21434988A patent/JPH0263144A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59219330A (en) * | 1983-05-18 | 1984-12-10 | オーシージー マイクロエレクトロニク マテリアルズ インク． | Polyimide, manufacture and use |
| JPS61141735A (en) * | 1984-11-16 | 1986-06-28 | チバ−ガイギ− ア−ゲ− | Polyimides, its production and use, tetracarboxilic acids and their derivatives |
| JPS61236829A (en) * | 1985-04-11 | 1986-10-22 | チバ‐ガイギー アーゲー | Coated material and its utilization |
| JPS6256948A (en) * | 1985-09-04 | 1987-03-12 | チバ−ガイギ− アクチエンゲゼルシヤフト | Cover material |
| JPS6327833A (en) * | 1986-07-22 | 1988-02-05 | Asahi Chem Ind Co Ltd | Method for forming image having heat-resistance |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02101764A (en) * | 1988-10-08 | 1990-04-13 | Toshiba Chem Corp | Resin seal type semiconductor device |
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