JPH0260121A - Device for coating semiconductor substrate - Google Patents
Device for coating semiconductor substrateInfo
- Publication number
- JPH0260121A JPH0260121A JP21166888A JP21166888A JPH0260121A JP H0260121 A JPH0260121 A JP H0260121A JP 21166888 A JP21166888 A JP 21166888A JP 21166888 A JP21166888 A JP 21166888A JP H0260121 A JPH0260121 A JP H0260121A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- plate
- flat surface
- coating solution
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 title claims abstract description 31
- 239000011248 coating agent Substances 0.000 title claims abstract description 23
- 238000000576 coating method Methods 0.000 title claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 238000009987 spinning Methods 0.000 abstract 2
- 230000000452 restraining effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造において、半導体基板にホト
レジスト等を塗布する塗布装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement in a coating device for coating a semiconductor substrate with photoresist or the like in the manufacture of semiconductor devices.
従来、この種の塗布装置は第５図に示すように、半導体
基板７を吸着しこれに回転を与えるスピンナー機構１と
、該スピンナー機構１の周囲を包囲しホトレジスト等が
周囲に飛散するのを阻止する排液カッ１２とを有する。Conventionally, this type of coating apparatus, as shown in FIG. 5, includes a spinner mechanism 1 that attracts a semiconductor substrate 7 and rotates it, and a spinner mechanism 1 that surrounds the spinner mechanism 1 to prevent photoresist and the like from scattering around it. It has a drainage cup 12 for blocking the liquid.
上述した従来の塗布装置は、矩形の半導体基板に塗布を
行なう場合、第４図に示すように半導体基板７の回転方
向１１の前方より気流１０の乱れが生じ回転方向１１の
後方部に気流１０が滞留した領域１２を生じる。この滞
留領域１２において塗布液に含まれる溶剤の蒸発が他の
領域に対して遅くなるため、塗布膜厚が他の領域に対し
薄くなるという問題点があった。In the conventional coating apparatus described above, when coating a rectangular semiconductor substrate, as shown in FIG. This results in a region 12 where the particles stagnate. Since the evaporation of the solvent contained in the coating liquid in this retention area 12 is slower than in other areas, there is a problem that the coating film thickness is thinner than in other areas.
このため、例えばリソグラフィ工程においては塗布膜厚
の差によるパターンの形成状態にバラツキを生じるとい
う問題点があった。For this reason, there is a problem that, for example, in a lithography process, variations occur in the state of pattern formation due to differences in coating film thickness.
本発明の目的は前記課題を解決した塗布装置を提供する
ことにある。An object of the present invention is to provide a coating device that solves the above problems.
上述した従来の装置に対し、本発明は矩形の半導体基板
に近接させてプレートを配することにより、気流の乱れ
を抑制して塗布膜厚を安定化するという相違点を有する
。The present invention differs from the above-described conventional apparatus in that the plate is disposed close to the rectangular semiconductor substrate, thereby suppressing airflow turbulence and stabilizing the coating film thickness.
前記目的を達成するため、本発明に係る塗布装置に゛お
いては、半導体基板を吸着し、これに回転を与えるスピ
ンナー機構と、平坦な面を有するプレートと、プレート
の平坦面を半導体基板へ近接した位置に移動させる機構
とを有するものである。In order to achieve the above object, the coating apparatus according to the present invention includes a spinner mechanism that attracts a semiconductor substrate and rotates it, a plate having a flat surface, and a spinner mechanism that attaches the flat surface of the plate to the semiconductor substrate. It has a mechanism for moving it to a nearby position.
次に本発明について図面により説明する。 Next, the present invention will be explained with reference to the drawings.
（実施例１）
第１図ｆａ） 、 （ｂ） 、 （ｃ）は本発明の実施
例１を示す概略図である。平坦面４を下部に有するプレ
ート３は、プレート３を横方向及び垂直方向へ移動させ
る移動ａ構５を介して支持架６によりスピンナー機構１
の上方位置に設置されている。(Example 1) Figures 1fa), (b) and (c) are schematic diagrams showing Example 1 of the present invention. The plate 3 having a flat surface 4 at the bottom is mounted on a spinner mechanism 1 by a support rack 6 via a moving mechanism 5 that moves the plate 3 laterally and vertically.
It is installed above the .
本実施例は第１図（ｂ）に示すように、スピンナーａ横
１に半導体基板７を真空吸着し、ホトレジスト等の塗布
液を半導体基板７上に滴下したのち、半導体基板７に１
０００ｒｐ１程度の低速回転を与えつつ、移動機構５に
てプレート３を横方向へ移動させ引続き下方向へ移動さ
せることにより、第１之（Ｃ）に示すようにプレート３
の下部の平坦面４を半導体基板７に対して約１ ｎｍの
間隔に保持して平行に配置し、次いで高速回転を与える
ことにより半導体基板７に塗布を行なう。In this embodiment, as shown in FIG. 1(b), a semiconductor substrate 7 is vacuum-adsorbed onto a spinner A horizontally, and a coating liquid such as photoresist is dropped onto the semiconductor substrate 7.
By moving the plate 3 laterally using the moving mechanism 5 and then moving it downward while applying a low speed rotation of about 000 rpm, the plate 3 is rotated as shown in No. 1 (C).
The lower flat surface 4 of the wafer is placed parallel to the semiconductor substrate 7 with an interval of approximately 1 nm, and then the semiconductor substrate 7 is coated by applying high-speed rotation.
本発明によれば、第３図に示すように、回転する半導体
基板７に対し一定間隔をあけてプレート３の平坦面４が
平行に配置されることとなり、半導体基板７の表面上を
流れる気流の乱れが抑制され、基板表面に沿って円滑に
流れることとなり、従来のように滞留することはなく、
基板表面の塗布膜厚が安定する。According to the present invention, as shown in FIG. 3, the flat surface 4 of the plate 3 is arranged parallel to the rotating semiconductor substrate 7 at a constant interval, and the airflow flowing over the surface of the semiconductor substrate 7 is arranged parallel to the rotating semiconductor substrate 7. This suppresses the turbulence of the liquid, allowing it to flow smoothly along the substrate surface, without stagnation as in the past.
The coating film thickness on the substrate surface is stabilized.
（実施例２）
第２図（ａ） 、 （ｂ）は本発明の実施例２を示す概
略図である。(Example 2) FIGS. 2(a) and 2(b) are schematic diagrams showing Example 2 of the present invention.
第２図（ａ）に示すように本実施例はプレート３を支持
架６上に反転可能に支持させ、かつプレート３を反転さ
せるパルスモータ８を装備したものである０図中、９．
９はプレート３の反転位置を規制するストッパである。As shown in FIG. 2(a), in this embodiment, the plate 3 is reversibly supported on a support rack 6, and is equipped with a pulse motor 8 for reversing the plate 3.
Reference numeral 9 denotes a stopper for regulating the inverted position of the plate 3.
本実施例では半導体基板７をスピンナーａ横１へ真空吸
着し、塗布液を滴下した後、ＩＱＯＯｒｐｍ程度の低速
回転を与えつつ、第２図（ｂ）に示すようにプレート３
をパルスモータ８により１８０°回転させることにより
、プレート３の平坦面４を半導体基板７に対し約１止の
間隔で近接させたのち高速回転を与えるものである。In this embodiment, the semiconductor substrate 7 is vacuum-adsorbed onto the side 1 of the spinner a, and after the coating liquid is dropped, the plate 3 is rotated at a low speed of about IQOO rpm as shown in FIG. 2(b).
By rotating the plate 3 by 180 degrees by a pulse motor 8, the flat surface 4 of the plate 3 is brought close to the semiconductor substrate 7 at a distance of about one stop, and then high-speed rotation is applied.
本実施例は実施例１に比ベプレート３の動作が一方向で
あるため、機構を簡略化できるという利点を有している
。This embodiment has an advantage over the first embodiment that the mechanism can be simplified because the comparison plate 3 operates in one direction.
以上説明したように本発明は、高速回転時に半導体基板
に近接してプレートの平坦面を置くことにより、基板表
面上での気流の乱れを抑制することにより、気流の滞留
を防止して塗布膜厚を均一にすることができ、したがっ
て塗布膜厚のバラツキによって生ずる半導体装置製造に
おける問題を低減できる効果がある。As explained above, the present invention suppresses turbulence of airflow on the substrate surface by placing the flat surface of the plate close to the semiconductor substrate during high-speed rotation, thereby preventing airflow from stagnation and forming a coated film. The thickness can be made uniform, which has the effect of reducing problems in semiconductor device manufacturing caused by variations in coating film thickness.
第１図（ａ） 、 （ｂ） 、 （ｃ）は本発明の実施
例１を示す概略図、第２図（ａ） 、 （ｂ）は本発明
の実施例２を示す概略図、第３図は本発明の塗布装置に
よる半導体基板上部における気流を示す概略図、第４図
は従来の塗布装置における気流を示す概略図、第５図は
従来の塗布装置を示す概略図である。
１・・・スピンナーｍ構 ２・・・排液カップ３・・
・プレート ４・・・プレートの平坦面５・・
・移動ｉ構 ６・・・支持架７・・・半導体基
板 ８・・・パルスモータ９・・・ストッパ
（αノ
騙嘔
図
１ズ１！ンナー林
（α）
（ｂ）
第２図
（ｂ）
（Ｃ）
４≧
第
図
＾右
シｉＪ
図
第
図
第
図FIGS. 1(a), (b), and (c) are schematic diagrams showing Embodiment 1 of the present invention, FIGS. 2(a) and (b) are schematic diagrams illustrating Embodiment 2 of the present invention, and FIG. FIG. 4 is a schematic diagram showing the air flow above a semiconductor substrate by the coating apparatus of the present invention, FIG. 4 is a schematic diagram showing the air flow in the conventional coating apparatus, and FIG. 5 is a schematic diagram showing the conventional coating apparatus. 1...Spinner m structure 2...Drainage cup 3...
・Plate 4...Flat surface of plate 5...
・Movement structure 6...Support rack 7...Semiconductor substrate 8...Pulse motor 9...Stopper ) (C) 4≧ Figure ＾ Right side iJ Figure Figure Figure
Claims (1)
ナー機構と、平坦な面を有するプレートと、プレートの
平坦面を半導体基板へ近接した位置に移動させる機構と
を有することを特徴とする半導体基板の塗布装置。(1) A semiconductor characterized by having a spinner mechanism that attracts a semiconductor substrate and rotates it, a plate having a flat surface, and a mechanism that moves the flat surface of the plate to a position close to the semiconductor substrate. Substrate coating equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21166888A JPH0260121A (en) | 1988-08-26 | 1988-08-26 | Device for coating semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21166888A JPH0260121A (en) | 1988-08-26 | 1988-08-26 | Device for coating semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0260121A true JPH0260121A (en) | 1990-02-28 |
Family
ID=16609618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21166888A Pending JPH0260121A (en) | 1988-08-26 | 1988-08-26 | Device for coating semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0260121A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5473572A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | Spin coater |
| JPS60139364A (en) * | 1983-12-27 | 1985-07-24 | Toshiba Corp | Resist coating apparatus |
-
1988
- 1988-08-26 JP JP21166888A patent/JPH0260121A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5473572A (en) * | 1977-11-24 | 1979-06-12 | Hitachi Ltd | Spin coater |
| JPS60139364A (en) * | 1983-12-27 | 1985-07-24 | Toshiba Corp | Resist coating apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4822639A (en) | Spin coating method and device | |
| US6117486A (en) | Photoresist coating method and apparatus | |
| TWI603377B (en) | Coating method,computer storage medium and coating apparatus | |
| US6402845B1 (en) | Process liquid dispense method and apparatus | |
| US5677001A (en) | Striation-free coating method for high viscosity resist coating | |
| JPS61104623A (en) | Rotary coater | |
| US10921713B2 (en) | Developing method, computer-readable storage medium and developing apparatus | |
| KR20070059912A (en) | Method for coating photoresist material | |
| US6860945B2 (en) | Substrate coating unit and substrate coating method | |
| US6689419B2 (en) | Method for manufacturing semiconductor device | |
| JPH0260121A (en) | Device for coating semiconductor substrate | |
| US7498124B2 (en) | Sacrificial surfactanated pre-wet for defect reduction in a semiconductor photolithography developing process | |
| JP2715775B2 (en) | Semiconductor manufacturing equipment | |
| JPH02219213A (en) | Resist applying apparatus | |
| JPH0246465A (en) | Developing device | |
| JP3109800B2 (en) | Non-striation coating method for high viscosity resist coating film | |
| JP2681133B2 (en) | Processing method | |
| JP2866295B2 (en) | Method of applying coating liquid to substrate | |
| JPH05115828A (en) | Coating device | |
| JP2736769B2 (en) | Coating device | |
| JPH01218664A (en) | Rotary coating apparatus | |
| JPH04171072A (en) | Substrate coater | |
| JPH04352315A (en) | Resist coater | |
| JPH02160074A (en) | Coater | |
| JPH05259049A (en) | Spin coating on semiconductor substrate |