JPH0256892A - Electroluminescence panel - Google Patents
Electroluminescence panelInfo
- Publication number
- JPH0256892A JPH0256892A JP63207828A JP20782888A JPH0256892A JP H0256892 A JPH0256892 A JP H0256892A JP 63207828 A JP63207828 A JP 63207828A JP 20782888 A JP20782888 A JP 20782888A JP H0256892 A JPH0256892 A JP H0256892A
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- film
- transparent insulating
- layer
- optical interference
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005401 electroluminescence Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 22
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 42
- 239000010410 layer Substances 0.000 description 40
- 239000000463 material Substances 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 208000003464 asthenopia Diseases 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000572 ellipsometry Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、エレクトロルミネセンスパネル（以後ＥＬパ
ネルと略称する）に関し、特に表示品質が向上したＥＬ
デイスプレィパネルに関する。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an electroluminescent panel (hereinafter abbreviated as EL panel), and in particular to an EL panel with improved display quality.
Regarding display panels.
近年コンピューターの普及に伴い、デイスプレィデバイ
スの需要が高まっており特に現在量も広く使われている
ＣＲＴの厚味が大きすぎると云う欠点を改善しようと云
う動きが盛んである。平面デイスプレィ装置として現在
実用化の域に達しているものには、代表的なものを挙げ
るとＬＣＤ（液晶デイスプレィ）、ＰＤ（プラズマデイ
スプレィ）、ＥＬＤ（エレクトロルミネセントディスプ
レイ）、螢光表示管の４種類があり、ＥＬＤは中でも輝
度の高さ、応答性の良さ、コントラストの良さ及び視野
角の広さに於いて群を抜いている。With the spread of computers in recent years, the demand for display devices has increased, and in particular, there has been a growing movement to improve the drawback that the CRT, which is currently widely used, is too thick. Typical flat display devices that have reached the stage of practical use include LCDs (liquid crystal displays), PDs (plasma displays), ELDs (electroluminescent displays), and fluorescent display tubes. There are four types, and ELD stands out in terms of high brightness, good response, good contrast, and wide viewing angle.
このようなＥＬＤとして、ガラス基板上に透明電極（例
えばＩＴＯ）、発光層（例えばＺｎＳ ： Ｍｎ）、電
流制限層（例えばＭｎ０ｚ） 、背面電極（例えばＡｎ
を順次積層した構造（例えば ＧＢ２１７６３４０Ａ、
ＧＢ２１７６３４１Ａ）が知られている。Such an ELD has a transparent electrode (e.g. ITO), a light emitting layer (e.g. ZnS:Mn), a current limiting layer (e.g. Mn0z), a back electrode (e.g. An
A structure in which GB2176340A, GB2176340A,
GB2176341A) is known.
しかしながら、上記従来のＥＬデイスプレィパネルにお
いては、ＥＬ素子を構成する各層の界面からの反射光量
及びＥＬパネル前面からの反射光量が大きいため、コン
トラストが悪く、又、眼性疲労の原因となっていた。However, in the above-mentioned conventional EL display panel, the amount of light reflected from the interface of each layer that makes up the EL element and the amount of light reflected from the front of the EL panel is large, resulting in poor contrast and causing eye strain. Ta.
本発明は、上記従来の問題点を解決するためになされた
ものであって、透明絶縁基板上に、透明電極、発光層、
電流制限層および背面電極を設けたエレクトロルミネセ
ンスパネルにおいて、該透明絶縁基板と発光層との間に
、光学干渉によって、透明絶縁基板側から入射した外部
光に対して透明絶縁基板と発光層との間に存在する界面
からの合計の反射光量が減少する様な屈折率および膜厚
を有する少なくともＩＮの光学干渉膜を設けている。The present invention has been made to solve the above-mentioned conventional problems, and includes a transparent electrode, a light emitting layer,
In an electroluminescent panel provided with a current limiting layer and a back electrode, optical interference occurs between the transparent insulating substrate and the light emitting layer to prevent external light incident from the transparent insulating substrate side. An optical interference film of at least IN is provided, which has a refractive index and film thickness such that the total amount of reflected light from the interface existing between the two is reduced.
該光学干渉層は、透明絶縁基板と透明導電膜の間、透明
導電膜と発光層の間又はその両方等の位置に設けること
ができる。内でも透明絶縁基板と透明導電膜との間に設
けることが、ＥＬ素子駆動の電気的な弊害防止条件がな
く自由にその材料、膜層を選択できるので好ましい。The optical interference layer can be provided at a position such as between the transparent insulating substrate and the transparent conductive film, between the transparent conductive film and the light emitting layer, or both. Of these, it is preferable to provide the film between the transparent insulating substrate and the transparent conductive film, since there is no requirement to prevent electrical problems in driving the EL element and the material and film layer can be freely selected.
該光学干渉層は単層であっても複層であってもかまわな
い。しかしながら複層にすると製造コストが増加するこ
とになるので単層とすることが好ましい。The optical interference layer may be a single layer or a multilayer. However, since a multi-layer structure increases manufacturing costs, a single layer structure is preferable.
該光学干渉層としては、ＡｌｚＯｌ、Ｔｉ１２．５ｉｆ
ｔ、ＭｇＦｚ （Ｐｒ ６ｏ１１ ＋ Ｔｉ（ｈ）、Ｚ
ｒ０ｚ等の透明材料が使用される。As the optical interference layer, AlzOl, Ti12.5if
t, MgFz (Pr 6o11 + Ti(h), Z
A transparent material such as r0z is used.
基板ガラス面から見た裏面反射率Ｒｒｅｖｍは、例えば
、■透明絶縁基板と透明導電膜との間に一層の光学干渉
膜を設ける場合、設ける光学干渉膜の屈折率ｎおよび厚
さｄ、透明絶縁基板の屈折率ｎ５Ｕｌ＋％透明導電膜の
屈折率ｎｌ？。、厚さｄｌＴｏ、および消衰係数ＲＩ？
。、発光層の屈折率１２Ｎ３を用いて、■発光層と透明
導電膜との間、および透明導電膜と透明絶縁基板との間
の両方に各々１石の光学干渉膜を設ける場合、発光層と
透明導電膜との間の光学干渉膜１の屈折率ｎ１および膜
厚ｄ１、および透明導電膜と透明絶縁基板との間の光学
干渉膜２の屈折率ｎ２および膜厚ｄ２および前述の特性
を用いて、
光学干渉膜の屈折率ｎおよび厚さｄは、上記裏面反射率
Ｒｒｅｖｍが減少する様に設定される。The back surface reflectance Rrevm as seen from the substrate glass surface is determined by, for example, Refractive index of substrate n5Ul+%Refractive index of transparent conductive film nl? . , thickness dlTo, and extinction coefficient RI?
. , using a refractive index of 12N3 for the emissive layer, (1) when providing one optical interference film each between the emissive layer and the transparent conductive film and between the transparent conductive film and the transparent insulating substrate, the emissive layer and Using the refractive index n1 and film thickness d1 of the optical interference film 1 between the transparent conductive film and the refractive index n2 and film thickness d2 of the optical interference film 2 between the transparent conductive film and the transparent insulating substrate and the above-mentioned characteristics. The refractive index n and thickness d of the optical interference film are set so that the back surface reflectance Rrevm decreases.
透明絶縁基板と透明導電膜との間に光学干渉膜を設ける
場合には、前記、光学干渉層の等価屈折率としては、透
明絶縁性基板の屈折率と透明電極の屈折率との中間の値
である必要がある。仮に、透明電極の屈折率よりも大き
な値の場合は、透明絶縁性基板と光学干渉層との界面か
らの反射光量が透明絶縁性基板と透明電極との界面から
の反射光量よりも大きくなり、本発明の目的に不適な結
果となる。When an optical interference film is provided between a transparent insulating substrate and a transparent conductive film, the equivalent refractive index of the optical interference layer is a value intermediate between the refractive index of the transparent insulating substrate and the refractive index of the transparent electrode. It must be. If the refractive index is larger than the refractive index of the transparent electrode, the amount of light reflected from the interface between the transparent insulating substrate and the optical interference layer will be greater than the amount of light reflected from the interface between the transparent insulating substrate and the transparent electrode. This results in an unsuitable result for the purpose of the present invention.
本発明のＥＬ素子の透明絶縁基板の発光層に対する反対
側表面に通常のレンズに使用される様な反射防止層を設
けることは、本発明の効果と相乗効果によってより良好
な表示品質を実現できるので好ましい。Providing an antireflection layer such as that used in ordinary lenses on the surface of the transparent insulating substrate opposite to the light emitting layer of the EL element of the present invention can achieve better display quality due to the effects of the present invention and a synergistic effect. Therefore, it is preferable.
パネル前面に成膜される反射防止層としては、例えば、
低屈折材料（例えばＭｇｈ）１層からなるもの、高屈折
材料／中間屈折材料／低屈折材料（例えばＰｒ６０＋＋
＋ Ｔｉ１ｔ／＾１２２０３／ Ｍｇｈ） ３層か
ら成るもの、高屈折材料／低屈折材料／高屈折材料／低
屈折材料（ＰｒｒＯ＋ Ｉ”Ｔｉ０ｚ／ Ｍｇｈ／ Ｐ
ｒ６［＋ ｔ ＋Ｔｉ１ｔ／Ｍｇｈ） ４層から成るも
の、あるいは５層以上の全て透明誘電体薄膜によって形
成されたものであったり、薄い吸収膜を利用して、透過
率を調整させる機能を、付加した多層反射防止層であっ
ても良い。For example, the antireflection layer formed on the front surface of the panel includes:
Consisting of one layer of low refractive material (e.g. Mgh), high refractive material/intermediate refractive material/low refractive material (e.g. Pr60++)
+ Ti1t/^12203/ Mgh) consisting of three layers, high refractive material/low refractive material/high refractive material/low refractive material (PrrO+ I"Ti0z/ Mgh/ P
r6 [+ t +Ti1t/Mgh) It is composed of 4 layers or 5 or more layers all made of transparent dielectric thin films, or it is added with a function to adjust the transmittance by using a thin absorption film. It may also be a multilayer antireflection layer.
本発明によれば、透明絶縁膜と発光層との間に光学干渉
膜を設けているために、透明絶縁性基板、光学干渉膜、
透明電極、発光層のそれぞれの界面からの外部からの光
の反射光がお互いに光学的に干渉し合い、ＥＬ素子の素
子部からの光の反射が低減される。そのためコントラス
トが良くなり、眼性疲労が軽減できる。According to the present invention, since the optical interference film is provided between the transparent insulating film and the light emitting layer, the transparent insulating substrate, the optical interference film,
The reflected light from the outside from the respective interfaces of the transparent electrode and the light emitting layer optically interfere with each other, and the reflection of light from the element portion of the EL element is reduced. This improves contrast and reduces eye strain.
〔実施例〕 以下、本発明の実施例について、説明する。〔Example〕 Examples of the present invention will be described below.
〈実施例１〉
ガラス基板１上に、真空蒸着法により酸化アルミ（Ａ
１ ｚｏｏ）を膜厚が８３ｎｍとなるように成膜した。<Example 1> Aluminum oxide (A
1 zooo) was deposited to a film thickness of 83 nm.
この時のＡ ｌ ｔａｘ膜６の屈折率はエリプソメトリ
−法により測定した結果１．６７であった。次に、透明
電極２としてインジウム・すず酸化物（ＩＴＯ）を反応
性スパッタ法を用いて、５００ｎｍの厚さに成膜した。The refractive index of the Al tax film 6 at this time was 1.67 as measured by ellipsometry. Next, as the transparent electrode 2, indium tin oxide (ITO) was formed into a film with a thickness of 500 nm using a reactive sputtering method.
更に、これらのＡ （ｌ ｚＯユ膜６及びＩＴＯ膜２が
成膜された面とは反対の面に高屈折材料（ＰｒｂＯ１＋
＋Ｔｉ０ｚ膜、屈折率ｎｇ ＝２．１０）と低屈折材
料（ＭｇＦｚ、屈折率ｎＬ＝１．３８）の交互４Ｎ膜か
ら成る反射防止層７を真空蒸着法により成膜した。Furthermore, a high refractive material (PrbO1+
The antireflection layer 7 was formed by a vacuum evaporation method, consisting of alternating 4N films of +Ti0z film, refractive index ng = 2.10) and a low refractive material (MgFz, refractive index nL = 1.38).
続いて、先に成膜されたＩＴＯ膜２をホトリソグラフィ
ー法により所定の形状にパターニングした後に、発光層
としてＭｎが０．３重量％ドープされたＺｎＳ膜３を約
１μｍの厚みに真空蒸着法により成膜した。Subsequently, after patterning the previously formed ITO film 2 into a predetermined shape by photolithography, a ZnS film 3 doped with 0.3% by weight of Mn as a light emitting layer is deposited to a thickness of about 1 μm by vacuum evaporation. The film was formed by
次に、Ｍｎ０ｚ粉末をバインダー樹脂とシンナーとの混
合液に分散させた塗料を、スプレー法により塗装、乾燥
させ膜厚が１５μｍの電流制限層４を形成した。Next, a paint in which MnOz powder was dispersed in a mixture of binder resin and thinner was applied by a spray method and dried to form a current limiting layer 4 having a thickness of 15 μm.
次に、背面電極５として、＾２を真空蒸着法で約０．５
μｍの厚みに形成した後、ダイヤモンド針ヲ用いて、Ｉ
ＴＯのパターンとは垂直にスクライブすることにより所
定の背面電極パターンを形成した。以上の様にして作製
したＥＬデイスプレィパネル（第１図）の表示面側から
分光光度計により反射率を測定した結果、従来のパネル
に比較して大幅に低減することができた。酸化アルミ膜
６および反射防止層７を持たない従来のＥＬパネルの分
光反射率を第３図に、本発明によるＥＬパネルの分光反
射率を第４図に示す。Next, as the back electrode 5, approximately 0.5
After forming it to a thickness of μm, I
A predetermined back electrode pattern was formed by scribing perpendicularly to the TO pattern. The reflectance of the EL display panel (FIG. 1) produced as described above was measured from the display surface side using a spectrophotometer, and the reflectance was found to be significantly lower than that of a conventional panel. FIG. 3 shows the spectral reflectance of a conventional EL panel without the aluminum oxide film 6 and antireflection layer 7, and FIG. 4 shows the spectral reflectance of the EL panel according to the present invention.
〈実施例２〉
ガラス基板上ｌに真空蒸着法により酸化アルミ（＾ｌ
ｚｏ：＋）を膜厚が７７ｒ＋ｍとなるように成膜した。<Example 2> Aluminum oxide (^l) was deposited on a glass substrate by vacuum evaporation method.
zo:+) was formed to have a film thickness of 77r+m.
この時のへ１２０３膜６の屈折率はエリプソメトリ−法
により測定した結果１．６７であった。次に透明電極２
としてＩＴＯを反応性スパッタ法を用いて４５０ｎｍの
厚さに成膜した。更に、これらのＡＮ、Ｑ、膜６及びＩ
ＴＯ膜２が成膜された面とは反対の面に実施例１で示し
た反射防止Ｎ７を真空蒸着法により成膜し、続いて先に
成膜されたＩＴＯ膜２をホトリソグラフィー法により所
定の形状にパターニングした後、ＩＴＯ膜２上２上Ｐｒ
、０． 、 ＋ Ｔｉ１ｔ）膜８を膜厚が３９ｎｏ＋と
なるように成膜した。The refractive index of the He1203 film 6 at this time was 1.67 as measured by ellipsometry. Next, transparent electrode 2
A film of ITO was formed to a thickness of 450 nm using a reactive sputtering method. Furthermore, these AN, Q, membrane 6 and I
The antireflection N7 shown in Example 1 was formed by vacuum evaporation on the surface opposite to the surface on which the TO film 2 was formed, and then the previously formed ITO film 2 was deposited in a predetermined position by photolithography. After patterning into the shape of Pr
,0. , +Ti1t) film 8 was formed to have a film thickness of 39no+.
この時の（ＰｒｈＯ＋ｔ ＋Ｔｉ０ｚ）膜の屈折率は２
．１２であった。更に発光層としてＭｎが０．３重量％
ドープされたＺｎＳ膜３を約１μｍの厚みに真空蒸着法
により成膜した。次にＭｎＯ□粉末をバインダー樹脂と
シンナーの混合液に分散させた塗料をスプレー法により
塗装、乾燥させ、膜厚が１５μｍの電流制限層４を形成
した。次に背面電極５として、Ａｌを真空蒸着法で約０
．５μｍの厚味に形成した後、ダイヤモンド針を用いて
ＩＴＯのパターンとは垂直にスクライブすることにより
所定の背面電極パターンを形成した。At this time, the refractive index of the (PrhO+t +Ti0z) film is 2
．． It was 12. Furthermore, 0.3% by weight of Mn is added as a light-emitting layer.
A doped ZnS film 3 having a thickness of about 1 μm was formed by vacuum evaporation. Next, a paint in which MnO□ powder was dispersed in a mixture of binder resin and thinner was applied by a spray method and dried to form a current limiting layer 4 having a thickness of 15 μm. Next, as the back electrode 5, Al was deposited by vacuum evaporation to approximately 0.
．． After forming it to a thickness of 5 μm, a predetermined back electrode pattern was formed by scribing perpendicularly to the ITO pattern using a diamond needle.
以上の様にして作製したＥＬデイスプレィパネル（第２
図）の表示面側から分光光度計により反射率を測定した
結果、大幅な反射率の低減を達成することができた。本
実施例のＥＬパネルの分光反射率を第５図に示す。The EL display panel (second
As a result of measuring the reflectance using a spectrophotometer from the display surface side of Figure), we were able to achieve a significant reduction in reflectance. FIG. 5 shows the spectral reflectance of the EL panel of this example.
上記実施例においては、透明電極、発光層、電流制限層
および背面電極からなる基本的な混成型ＥＬ素子の構造
を用いているが、本発明は上記実施例に限らず発光層と
電流制限層との間に黒色層を設けた構造（例えばＧＢ２
１７６３４１Ａ等）等上記基本構造の変形に対しても実
施でき、同等な効果が得られる。In the above embodiments, a basic hybrid EL element structure consisting of a transparent electrode, a light emitting layer, a current limiting layer and a back electrode is used, but the present invention is not limited to the above embodiments. A structure in which a black layer is provided between the
176341A, etc.), and similar effects can be obtained.
本発明によれば、従来のＥＬデイスプレィパネルに比べ
て外部反射光を大幅に削減でき、１０００１ｕｘの光の
下で、コントラストを従来の３０：１から１００：１に
向上させることができた。又、光干渉層が、透明絶縁性
基板と透明電極との間又は透明電極と発光層の間に挿入
された構造となっているため、光干渉層が透明基板また
は透明電極から発光層へイオンが拡散するのを防ぐため
、ＥＬ素子の寿命の低下、輝度の低下等を防ぐことがで
きる。According to the present invention, external reflected light can be significantly reduced compared to conventional EL display panels, and the contrast can be improved from the conventional 30:1 to 100:1 under 10,001 ux light. In addition, since the optical interference layer has a structure inserted between the transparent insulating substrate and the transparent electrode or between the transparent electrode and the light emitting layer, the optical interference layer does not transfer ions from the transparent substrate or the transparent electrode to the light emitting layer. Since the EL element is prevented from being diffused, it is possible to prevent a decrease in the life of the EL element, a decrease in brightness, etc.
この結果、従来よりも高コントラスト、長寿命なＥＬデ
イスプレィパネルを提供することが出来る。As a result, it is possible to provide an EL display panel with higher contrast and longer life than conventional ones.
第１図、第２図はそれぞれ実施例１．実施例２で示した
本発明による混成型ＥＬ素子の断面図であり、
第３図は、従来の混成型ＥＬデイスプレィパネルの分光
反射特性、
第４図は、実施例１の混成型ＥＬデイスプレィパネルの
分光反射特性、
第５図は、実施例２の混成型ＥＬデイスプレィパネルの
分光反射特性を各々示す図である。
第
図FIG. 1 and FIG. 2 show Example 1, respectively. 3 is a cross-sectional view of a hybrid EL device according to the present invention shown in Example 2, FIG. 3 is a spectral reflection characteristic of a conventional hybrid EL display panel, and FIG. Spectral Reflection Characteristics of Spray Panel FIG. 5 is a diagram showing the spectral reflection characteristics of the hybrid EL display panel of Example 2. Diagram
Claims (1)
限層および背面電極を設けたエレクトロルミネセンスパ
ネルにおいて、該透明絶縁基板と発光層との間に、光学
干渉によって、透明絶縁基板側から入射した外部光に対
して透明絶縁基板と発光層との間に存在する界面からの
合計の反射光量が減少する様な屈折率および膜厚を有す
る少なくとも１層の光学干渉膜を設けたことを特徴とす
るエレクトロルミネセンスパネル。(1) In an electroluminescent panel in which a transparent electrode, a light-emitting layer, a current limiting layer, and a back electrode are provided on a transparent insulating substrate, optical interference occurs between the transparent insulating substrate and the light-emitting layer on the transparent insulating substrate side. Provided with at least one optical interference film having a refractive index and film thickness such that the total amount of reflected light from the interface existing between the transparent insulating substrate and the light emitting layer is reduced with respect to external light incident from the transparent insulating substrate and the light emitting layer. An electroluminescent panel featuring
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63207828A JPH0256892A (en) | 1988-08-22 | 1988-08-22 | Electroluminescence panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63207828A JPH0256892A (en) | 1988-08-22 | 1988-08-22 | Electroluminescence panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0256892A true JPH0256892A (en) | 1990-02-26 |
Family
ID=16546190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63207828A Pending JPH0256892A (en) | 1988-08-22 | 1988-08-22 | Electroluminescence panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0256892A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02276191A (en) * | 1988-12-02 | 1990-11-13 | Natl Res Council Of Canada | Optical interfering el device |
| US5243822A (en) * | 1989-05-23 | 1993-09-14 | Angelo Vismara | Hydraulic rotary pump-turbine as a torque converter |
| WO2001006816A1 (en) * | 1999-07-19 | 2001-01-25 | Luxell Technologies Inc. | Optical interference layer for electroluminescent devices |
| US6548956B2 (en) | 1994-12-13 | 2003-04-15 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US6596134B2 (en) | 1994-12-13 | 2003-07-22 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
| WO2003094254A3 (en) * | 2002-05-06 | 2004-02-05 | Luxell Technologies Inc | Electroluminescent device |
| JP2005317208A (en) * | 2004-04-26 | 2005-11-10 | Nippon Sheet Glass Co Ltd | Organic electroluminescent display device |
-
1988
- 1988-08-22 JP JP63207828A patent/JPH0256892A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02276191A (en) * | 1988-12-02 | 1990-11-13 | Natl Res Council Of Canada | Optical interfering el device |
| US5243822A (en) * | 1989-05-23 | 1993-09-14 | Angelo Vismara | Hydraulic rotary pump-turbine as a torque converter |
| US6548956B2 (en) | 1994-12-13 | 2003-04-15 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US6596134B2 (en) | 1994-12-13 | 2003-07-22 | The Trustees Of Princeton University | Method of fabricating transparent contacts for organic devices |
| US7173369B2 (en) | 1994-12-13 | 2007-02-06 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| US7714504B2 (en) | 1994-12-13 | 2010-05-11 | The Trustees Of Princeton University | Multicolor organic electroluminescent device formed of vertically stacked light emitting devices |
| US8324803B2 (en) | 1994-12-13 | 2012-12-04 | The Trustees Of Princeton University | Transparent contacts for organic devices |
| WO2001006816A1 (en) * | 1999-07-19 | 2001-01-25 | Luxell Technologies Inc. | Optical interference layer for electroluminescent devices |
| WO2003094254A3 (en) * | 2002-05-06 | 2004-02-05 | Luxell Technologies Inc | Electroluminescent device |
| JP2005317208A (en) * | 2004-04-26 | 2005-11-10 | Nippon Sheet Glass Co Ltd | Organic electroluminescent display device |
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