JPH0252514A - Mechanical filter - Google Patents
Mechanical filterInfo
- Publication number
- JPH0252514A JPH0252514A JP20444288A JP20444288A JPH0252514A JP H0252514 A JPH0252514 A JP H0252514A JP 20444288 A JP20444288 A JP 20444288A JP 20444288 A JP20444288 A JP 20444288A JP H0252514 A JPH0252514 A JP H0252514A
- Authority
- JP
- Japan
- Prior art keywords
- vibrator
- vibration
- current
- vibrators
- mechanical filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 230000006698 induction Effects 0.000 claims abstract description 7
- 230000005284 excitation Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、シリコン基板に形成した振動梁を利用した、
メカニカルフィルターに関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention utilizes a vibrating beam formed on a silicon substrate.
This relates to mechanical filters.
〈従来の技術〉
第５図〜第７図は従来より一般に使用されている従来例
の構成説明図である。<Prior Art> FIGS. 5 to 7 are explanatory diagrams of the configuration of a conventional example that has been commonly used.
第５図は原理的構成説明図、第６図は第５図のＡ−Ａ断
面図、第７図（Ａ）、（Ｂ）は第５図を電気回路で示し
た図であり、第７図（Ｂ）はｐ形層とｎ＋形層の間に逆
バイアス電圧を印加するための電源を示している。FIG. 5 is an explanatory diagram of the principle configuration, FIG. 6 is a sectional view taken along line A-A in FIG. Figure (B) shows a power supply for applying a reverse bias voltage between the p-type layer and the n+ type layer.
これらの図において、１１は（Ｚｏｏ）面を有する、例
えば不純物濃度１０１５原子／ｃｍ’以下のρ形のシリ
コン基板である。In these figures, reference numeral 11 is a ρ-type silicon substrate having a (Zoo) plane and having an impurity concentration of 1015 atoms/cm' or less, for example.
この基板１１の表面には部分的に不純物濃度１０盲７程
度のｎ十拡散層（図では省略）が形成され、このｎ＋拡
散層の一部に振動梁１２が＜００１〉方向に形成されて
いる。なお、この振動梁１２は基板１１に形成されたｎ
十層およびｐ層をフォトリソグラフィとアンダエッチン
グの技術を用いて加工する。On the surface of this substrate 11, an n+ diffusion layer (not shown in the figure) with an impurity concentration of about 10 and 7 is partially formed, and a vibration beam 12 is formed in the <001> direction in a part of this n+ diffusion layer. There is. Note that this vibration beam 12 is formed on the substrate 11.
The ten-layer and p-layer are processed using photolithography and under-etching techniques.
１３は振動梁１２の略中央上部に振動梁１２に直交し、
かつ、非接触の状態で設けられた磁石、１４は絶縁膜と
しての５ｉ０２膜（第６図参照）である。13 is located approximately at the upper center of the vibrating beam 12 and is perpendicular to the vibrating beam 12;
Further, the magnet 14 provided in a non-contact state is a 5i02 film (see FIG. 6) as an insulating film.
１５ａ、１５ｂは例えばアルミニウム（Ａｌ）などの金
属＠極で、この金属な極１５ａの一端は振動梁１２から
延長したｎ＋層にＳｉＯ２層に設けたコンタクトホール
１６ａ、を通じて接続され、他端はリード線を介して振
動梁１２の抵抗値とほぼ等しい比較抵抗Ｒ０および増幅
器２０の一端に接続されている。15a and 15b are metal @ electrodes such as aluminum (Al), one end of this metal pole 15a is connected to the n+ layer extending from the vibration beam 12 through a contact hole 16a provided in the SiO2 layer, and the other end is connected to a lead. It is connected to a comparison resistor R0 whose resistance value is approximately equal to the resistance value of the vibrating beam 12 and one end of the amplifier 20 via a wire.
増幅器２０の出力は出力信号として取出されるとともに
分岐して一次コイルＬ１の一端に接続されている。この
コイルＬ ＋の１也端はコモンラインに接続されている
。The output of the amplifier 20 is taken out as an output signal, branched off, and connected to one end of the primary coil L1. One end of this coil L+ is connected to the common line.
一方比較抵抗Ｒ，の他端は中点がコモンラインに接続し
た２次コイルＬ２の他端に接続され、この２次コイルＬ
２の他端は振動梁１２の１１！！端に前記同様に形成さ
れた金属電極１５ｂに接続されている。On the other hand, the other end of the comparison resistor R is connected to the other end of the secondary coil L2 whose middle point is connected to the common line.
The other end of 2 is 11 of the vibrating beam 12! ! The end thereof is connected to a metal electrode 15b formed in the same manner as described above.
上記構成において、ｐ形層（基板１０）とｎ＋形層（振
動梁１２）の間に逆バイアス電圧を印加して絶縁し、振
動梁１２に交流電流ｌを流すと振動梁１２の共振周波数
において電磁誘導作用により振動梁のインピーダンスが
上昇して、比較抵抗Ｒｏ−および中点をコモンラインに
接続したＬ２により構成されるブリッジにより不平衡信
号を得ることができる。この信号を増幅器２０で増幅し
、出力信号として取出す。In the above configuration, when a reverse bias voltage is applied between the p-type layer (substrate 10) and the n+-type layer (vibration beam 12) to insulate them, and an alternating current l is passed through the vibration beam 12, the resonant frequency of the vibration beam 12 The impedance of the vibrating beam increases due to electromagnetic induction, and an unbalanced signal can be obtained by the bridge formed by the comparison resistor Ro- and L2 whose midpoint is connected to the common line. This signal is amplified by an amplifier 20 and taken out as an output signal.
十記栖成において、振動梁１２のインピーダンス）ｔは
固有振動数に応じて上昇する。このインピーダンスＩ（
は、次式のように表わすことができる。In this case, the impedance (t) of the vibrating beam 12 increases according to the natural frequency. This impedance I (
can be expressed as the following equation.
トｔ −辷 （１／２２２） ・ （１／（Ｅｇ
γ ） ｌ／２ ）（ＡＩ３’ ｌ’ ／ｂｈ
２ ） ・ Ｑ十 丁（０ここで、ｌシ；弾性率
ｇ；重力加速
γ；振動子を構成している材料の密度
Ａ：振動モードによって決まる定数
Ｂ；磁束密度
！；振動梁の長さ
ｂ：振動梁の幅
ｈ；振動梁の厚さ
Ｑ；共振の鋭さ
Ｒｏ：直流抵抗値
上式によれば振動梁のＱが数百〜致方の値をとるため、
共振状態において増幅器の出力として、大きな振幅信号
を得ることができる。t - Length (1/222) ・ (1/(Eg
γ ) l/2 ) (AI3'l' /bh
2) ・Q 10 (0 where: l; modulus of elasticity g; gravitational acceleration γ; density of the material making up the vibrator A: constant B determined by the vibration mode; magnetic flux density!; length of the vibrating beam b: Width of the vibrating beam h; Thickness Q of the vibrating beam; Sharpness of resonance Ro: DC resistance value According to the above formula, the Q of the vibrating beam takes a value of several hundred to several hundred,
A large amplitude signal can be obtained as the output of the amplifier in the resonant state.
なお、振動梁の加工手段および形状は本実施例に限るも
のではなく、例えば、ｎ形シリコン基板にＢ（ボ西ン）
を４Ｘ１０”原子／ ｃ ｍ ３以上拡散して選択性エ
ツチングにより形成したものを用いてもよい。Note that the processing means and shape of the vibrating beam are not limited to those in this embodiment.
A material formed by diffusing 4×10” atoms/cm 3 or more and selective etching may also be used.
しかしながら、この様な装置においては、振動梁１２に
発生する逆起電力を交流ブリッジを用いて検出している
が、入力信号の成分を、交流ブリッジで完全に抑圧する
ことは事実上不可能であるから、ブリッジ出力には入力
成分の一部が乗ってくる。However, in such devices, although the back electromotive force generated in the vibrating beam 12 is detected using an AC bridge, it is virtually impossible to completely suppress the input signal component with an AC bridge. Therefore, a part of the input component is transferred to the bridge output.
このために、Ｓ／Ｎ比が悪く安定な出力信号が４４＞ら
れない。For this reason, the S/N ratio is poor and a stable output signal cannot be produced.
この様な問題点を解決するために、本願出願人は昭和６
２年１０月２７日出願の特願昭６２−２７１５５７号「
発明の名称；メカニカルフィルタ」を出願している。In order to solve these problems, the applicant of the present application
Patent Application No. 62-271557 filed on October 27, 2017
The title of the invention is ``Mechanical Filter''.
以上、この出願について、第８図から第１１図により説
明する。This application will now be explained with reference to FIGS. 8 to 11.
第８図は特願昭６２−２７１５５７号の一実施例の原理
的要部構成説明図である。FIG. 8 is a diagram illustrating the basic structure of an embodiment of Japanese Patent Application No. 62-271557.
図において、第５図と同一記号の構成は同一機能を表わ
す。In the figure, structures with the same symbols as in FIG. 5 represent the same functions.
以下、第５図と相違部分のみ説明する。Hereinafter, only the differences from FIG. 5 will be explained.
３０は振動子本体である。振動子本体３０は両端か基板
１１に同定され互いに平行に配置された第１振動子３１
．第２振動子３２と、第１振動子３１ 第２振動子３２
の振動の腹の部分を相互に機械的に結合する連結梁動３
３とを備える。30 is a vibrator main body. The vibrator main body 30 has first vibrators 31 located at both ends or the substrate 11 and arranged parallel to each other.
．． The second vibrator 32, the first vibrator 31, the second vibrator 32
Connecting beam motion 3 that mechanically connects the antinodes of vibration to each other
3.
４０は振動子本体３０に直交する直流磁界を磁石】３に
より加え第１振動子３】の両端に交流電流を入カドラン
ス４１により流して磁気誘導作用により振動子本体３０
を磁界と電流に直交する方向に励振する励振手段である
。Reference numeral 40 denotes a DC magnetic field orthogonal to the vibrator body 30 by a magnet 3), and an AC current is applied to both ends of the first vibrator 3 by an inductor transformer 41, so that the vibrator body 30 is generated by magnetic induction.
This is an excitation means that excites the magnetic field in a direction perpendicular to the magnetic field and the current.
入カドランス４１は一次側が入力端子４２に接続されて
いる。二次側は第１振動子３１の両端に接続されている
。The input transformer 41 has its primary side connected to the input terminal 42 . The secondary side is connected to both ends of the first vibrator 31.
５０は他方の第２振動子３２の両端に発生する起電力を
検出する振動検出手段である。この場合は、出カドラン
ス５１が用いられている。出カドランス５１の一次側は
第２振動子３２の両端に接続され、二次側は増幅器５２
を介して出力端子５３に接続されている。Reference numeral 50 denotes vibration detection means for detecting the electromotive force generated at both ends of the other second vibrator 32. In this case, an output transformer 51 is used. The primary side of the output transformer 51 is connected to both ends of the second oscillator 32, and the secondary side is connected to the amplifier 52.
It is connected to the output terminal 53 via.
以上の構成において、励振手段４０に入力された入力信
号により振動子本体３０は励振される。In the above configuration, the vibrator main body 30 is excited by the input signal input to the excitation means 40.
振動子本体３０の振動は振動検出手段５０により検出さ
れ出力信号として取出される。The vibration of the vibrator body 30 is detected by the vibration detection means 50 and taken out as an output signal.
この結果、振動子本体３０は、励振用の第１振動子３１
と、起電力検出用の第２振動子３２に分けられ、連結梁
３３で、第１振動子３１の振動の腹の部分を結合するよ
うにされなので、電気的には分離されているが、機械的
には結合されているため、高い入力成分除去比（ＳＮ比
）が得られる。As a result, the vibrator main body 30 has the first vibrator 31 for excitation.
and a second vibrator 32 for electromotive force detection, and the antinode of the vibration of the first vibrator 31 is connected by a connecting beam 33, so they are electrically separated. Since they are mechanically coupled, a high input component rejection ratio (SN ratio) can be obtained.
第９図は振動子本体３０の実際例で、第１０図は第９図
のＢ−Ｂ断面図である。FIG. 9 shows an actual example of the vibrator main body 30, and FIG. 10 is a sectional view taken along the line BB in FIG.
第１０図において、振動子本体３０は、振動子３１．３
２のＱｆｌｉを高くするために、シェル６０で振動子本
体３０を覆い、振動子３１．３２の周面に隙間６２を設
けて真空室６１に封じ込められた状態を承す。In FIG. 10, the vibrator main body 30 includes a vibrator 31.3.
In order to increase Qfli of 2, the vibrator main body 30 is covered with a shell 60, and gaps 62 are provided around the circumferential surfaces of the vibrators 31 and 32, so that the vibrators 31 and 32 are sealed in a vacuum chamber 61.
第８図、第９図においては、分りやすくするために、シ
ェル６０は示されていない。Shell 60 is not shown in FIGS. 8 and 9 for clarity.
この様な装置は、例えば、第１１図に示す如くして作ら
れる。Such a device can be made, for example, as shown in FIG.
（１）第１１図＜Ａ＞に示すごとく、ｎ型シリコン（１
００）面にカットされた基板１１に、シリコン酸化物あ
るいはシリコン窒化物の膜１０１を形成する。膜１０１
の所要の箇所１０２をホトリソグラフィにより除去する
。(1) As shown in Figure 11 <A>, n-type silicon (1
A film 101 of silicon oxide or silicon nitride is formed on the substrate 11 cut into the 00) plane. Membrane 101
Required portions 102 of are removed by photolithography.
（２）第１１図（Ｂ ）に示すごとく、１０５０℃。(2) As shown in Figure 11 (B), 1050°C.
の水素（Ｈ２）雰囲気中で、塩化水素でエツチングを行
い、基板１１に所要箇所１０２をエツチングして膜１０
１をアンダーカットして、四部１０３を形成する。Etching is performed with hydrogen chloride in a hydrogen (H2) atmosphere to etch required portions 102 on the substrate 11 to form the film 10.
1 is undercut to form four parts 103.
なお、塩化水素の代りに、高温水蒸気、酸素を用いるか
、あるいは、４０℃〜１３０℃のアルカリ液による異方
性エツチングでもよい。Note that instead of hydrogen chloride, high-temperature steam or oxygen may be used, or anisotropic etching may be performed using an alkaline solution at a temperature of 40 DEG C. to 130 DEG C.
（３）第１１図（Ｃ）に示すごとく、１０５０℃の水素
（Ｈ２）雰囲気中でソースカスに塩化水素（Ｈ（１）ガ
スを混入して選択エピタキシャル成長法を行う。(3) As shown in FIG. 11(C), selective epitaxial growth is performed by mixing hydrogen chloride (H(1) gas into the source scum in a hydrogen (H2) atmosphere at 1050°C.
すなわち、
■ボロンの濃度１０”ｃｍ’のＰ形シリコンにより、隙
間部６２の下半分に相当する第１エピタキシャル層１０
４を選択エピタキシャル成長させる。That is, (1) the first epitaxial layer 10 corresponding to the lower half of the gap 62 is made of P-type silicon with a boron concentration of 10 cm';
4 is selectively epitaxially grown.
■ボロンの濃度３Ｘ１０”ｃｍ’以上のＰ形シリコンに
より、第１エピタキシャル層１０４の表面に、所要の箇
所１０２を塞ぐように、振動子本体３０に相当する第２
エピタキシャル層１０５を選択エピタキシャル成長させ
る。■ P-type silicon with a boron concentration of 3 x 10" cm or more is used to form a second epitaxial layer on the surface of the first epitaxial layer 104, which corresponds to the vibrator body 30, so as to cover the required location 102.
Epitaxial layer 105 is selectively epitaxially grown.
■ボロンの濃度１０”ｃｍ’のＰ形シリコンにより、第
２エピタキシャル層１０５の表面に、隙間部６２の上半
分に相当する第３エピタキシャル層１０６を選択エピタ
キシャル成長させる。(2) A third epitaxial layer 106 corresponding to the upper half of the gap 62 is selectively epitaxially grown on the surface of the second epitaxial layer 105 using P-type silicon with a boron concentration of 10 cm'.
■ボロンの濃度３Ｘ１０’ ” ｃｍ″２以上のＰ形シ
リコンにより、第３エピタキシャル層１０６の表面に、
シェル６０に相当する第４エピタキシャル層１０７を選
択エピタキシャル成長させる。■ P-type silicon with a boron concentration of 3 x 10'"cm"2 or more is used to coat the surface of the third epitaxial layer 106,
A fourth epitaxial layer 107 corresponding to the shell 60 is selectively epitaxially grown.
（４）第１１図（Ｄ）に示すごとく、シリコン酸化物、
あるいは、シリコン窒化物の膜１０１をフッ化水素酸（
ＨＦ’ ）でエツチングして除去し、エツチング注入口
１０８を設ける。(4) As shown in FIG. 11(D), silicon oxide,
Alternatively, the silicon nitride film 101 may be coated with hydrofluoric acid (
HF') to provide an etching inlet 108.
（５）第１１図（Ｅ）に示すごとく、第４層に対して基
板】１に正のパルスを印加して、エツチング液の注入Ｌ
ｌ １０８よりアルカリ液を注入して、第１エピタキシ
ャル層１０４と第３エピタキシャル層１０６を選択エツ
チングして除去する。(5) As shown in FIG. 11(E), apply a positive pulse to the substrate 1 for the fourth layer and inject the etching solution L.
An alkaline solution is injected through 108, and the first epitaxial layer 104 and the third epitaxial layer 106 are selectively etched and removed.
第２エピタキシヤルＲ１Ｊ１０５と第１エピタキシャル
層１０４あるいは第３エピタキシャル層１０６との間に
エツチング作用の差があるのは、ボロンの濃度が３Ｘ１
０” ｃｍ″２以上となるとエッチング作用に抑制現象
が生ずることによる。The reason for the difference in etching effect between the second epitaxial layer 105 and the first epitaxial layer 104 or the third epitaxial layer 106 is that the boron concentration is 3X1.
If the thickness exceeds 0"cm"2, the etching action will be inhibited.
このことは、例えば、［トランスデュサーズー８７ＪＦ
Ｉ本電気学会発行の１２３ベージ Ｆｉｇ８に示されて
いる。This means, for example, [Transducer Zoo 87JF
This is shown in Fig. 8, page 123, published by the Institute of Electrical Engineers of Japan.
（６）第１１図（Ｆ）に示すごとく、１０５０℃の水素
（Ｈ２）中で、ｎ形シリコンのエピタキシャル成長を行
い、第２エピタキシャル層１０５と第４エピタキシャル
層１０７と基板１１の凹部１０３側の面を覆うと共に、
注入口１０８を塞ぐようにして、ｎ形シリコンからなる
第５エピタキシャル層１０９を形成し、エツチング注入
口１０８をとじる。(6) As shown in FIG. 11(F), epitaxial growth of n-type silicon is performed in hydrogen (H2) at 1050° C., and the second epitaxial layer 105, fourth epitaxial layer 107, and substrate 11 on the concave portion 103 side are grown. Along with covering the face,
A fifth epitaxial layer 109 made of n-type silicon is formed so as to cover the injection port 108, and the etching injection port 108 is closed.
〈発明が解決しようとする課題〉
しかしながら、この様な装置においては第１振動子３１
．第２振動子３２と連結梁３３との結合部分が複雑とな
り、エピタキシャル成長が結晶方位によって異なるため
、結合部分の結晶形成が綺麗に出来ない、また、シェル
６０と第１振動子３１、第２振動子３２との間の隙間６
２が狭くなる等の問題があり、製造上の歩留りを悪くす
るとの問題があった。<Problem to be solved by the invention> However, in such a device, the first vibrator 31
．． The joint part between the second vibrator 32 and the connecting beam 33 is complicated, and epitaxial growth differs depending on the crystal orientation, so crystal formation at the joint part cannot be achieved neatly. Gap 6 between child 32
2 becomes narrow, which causes a problem of poor manufacturing yield.
本発明は、この問題点を解決するものである。The present invention solves this problem.
本発明の目的は、Ｓ／Ｎ比が良好で安定な出力信号が得
られ、安価なメカニカルフィルターを提供するにある。An object of the present invention is to provide an inexpensive mechanical filter that can provide a stable output signal with a good S/N ratio.
く問題点を解決するための手段〉
この目的を達成するために、本発明は、シリコン単結晶
の基板上に設けられたシリコン単結晶材よりなる振動子
本体と、該振動子本体を励振する励振手段と、前記振動
子本体の励振された振動を検出する振動検出手段とを具
備するメカニカルフィルターにおいて、
両端が前記基板に固定され互いに平行に配置され長さと
幅と厚さがほぼ等しい第１振動子と第２振動子とを備え
る振動子本体と、該振動子本体に直交する直流磁界を加
え第１振動子の両端に交流電流を流して磁気誘導作用に
より振動子を磁界と電流に直交する方向に励振する励振
手段と、前記第２振動子の両端に発生ずる起電力を検出
する振動検出手段とを具備してなるメカニカルフィルタ
ーを構成したものである。Means for Solving the Problems In order to achieve this object, the present invention provides a vibrator body made of a silicon single crystal material provided on a silicon single crystal substrate, and a method for exciting the vibrator body. In a mechanical filter comprising an excitation means and a vibration detection means for detecting the excited vibration of the vibrator body, a first filter having both ends fixed to the substrate, arranged parallel to each other, and having substantially equal length, width, and thickness; A vibrator body comprising a vibrator and a second vibrator, a DC magnetic field perpendicular to the vibrator body, an AC current flowing across both ends of the first vibrator, and a magnetic induction effect causing the vibrator to be orthogonal to the magnetic field and current. The mechanical filter includes an excitation means that excites in the direction of the second vibrator, and a vibration detection means that detects the electromotive force generated at both ends of the second vibrator.
く作用〉
以上の構成において、
振動子には、直交するように交流磁界が掛けられている
。Effect> In the above configuration, an alternating magnetic field is applied to the vibrator so as to be perpendicular to it.
第１振動子の両端に入力交番電流を流すと、磁気誘導作
用により、磁界と電流とに直交する方向に励振される。When an input alternating current is applied to both ends of the first vibrator, the first vibrator is excited in a direction perpendicular to the magnetic field and the current due to magnetic induction.
この場合の振動周波数は、第１振動子の長さ、幅、厚さ
および張力により決まる固有振動数で励振する。In this case, the vibration frequency is excited at a natural frequency determined by the length, width, thickness, and tension of the first vibrator.
このとき、第２振動子も、同形状、同張力であると、等
しい固有振動数を持つために、励振された第１振動子の
振動ネルギーが、第１振動子の両端の壁を介して伝達し
、第２振動子も同じ振動数で振動する。At this time, if the second vibrator has the same shape and the same tension, it will have the same natural frequency, so the vibration energy of the excited first vibrator will be transmitted through the walls at both ends of the first vibrator. The second vibrator also vibrates at the same frequency.
振動子本体の振動は振動検出手段により検出され、その
周波数は出力信号として取出される。The vibration of the vibrator body is detected by the vibration detection means, and its frequency is extracted as an output signal.
以下、実施例に基づき詳細に説明する。Hereinafter, a detailed explanation will be given based on examples.
〈実施例〉
第１図は本発明の一実施例の要部構成説明図で、第２図
は実際の使用例、第３図は第２図のＢ−）１断面図、第
４図は第１図の動作説明図である。<Example> Fig. 1 is an explanatory diagram of the main part configuration of an embodiment of the present invention, Fig. 2 is an actual usage example, Fig. 3 is a sectional view of B-)1 in Fig. 2, and Fig. 4 is a cross-sectional view of Fig. 2. FIG. 2 is an explanatory diagram of the operation of FIG. 1;
図において、第８図と同一記号の構成は同一・機能を表
わす。In the figure, configurations with the same symbols as in FIG. 8 represent the same functions.
以下、第８図と相違部分のみ説明する。Hereinafter, only the differences from FIG. 8 will be explained.
第８図との相違は、第１振動子３］と第２振動子３２と
を連結する連結梁３３がないのみである。The only difference from FIG. 8 is that there is no connecting beam 33 connecting the first vibrator 3 and the second vibrator 32.
しかして、第１振動子３１と第２振動子３２とは近接し
て設りられ、その長さ、幅、厚さは等しく形成されてい
る。Thus, the first vibrator 31 and the second vibrator 32 are provided close to each other, and have the same length, width, and thickness.
以上の構成において、
振動子３１．３２には、直交するように交流磁界をかけ
、第１振動子３１の両端に入力交番電流を流すと、磁気
誘導作用により、磁界と電流とに直交する方向に励振す
る。In the above configuration, when an alternating magnetic field is applied to the vibrators 31 and 32 orthogonally to each other and an input alternating current is passed through both ends of the first vibrator 31, magnetic induction causes a direction perpendicular to the magnetic field and the current to flow. Excite to.
この場合の振動周波数は、第１振動子の長さ、幅、厚さ
および張力により決まる固有振動数で励振する。In this case, the vibration frequency is excited at a natural frequency determined by the length, width, thickness, and tension of the first vibrator.
このとき、第２振動子３２も、同形状、同張力であると
、等しい固有振動数を持つために、励振された第１振動
子３１の振動ネルギーか、第１振動子３１の両端の壁を
介して伝達し、第２振動子３２も同じ振動数で振動する
。At this time, if the second vibrator 32 has the same shape and the same tension, it has the same natural frequency, so the vibration energy of the excited first vibrator 31 or the walls at both ends of the first vibrator 31 The second vibrator 32 also vibrates at the same frequency.
第２振動子３２の振動は、振動検出手段により検出され
、その周波数は、出力信号として取出される。The vibration of the second vibrator 32 is detected by the vibration detection means, and its frequency is extracted as an output signal.
この結果、
（１）振動子本体３０の形状が２本の振動子３１゜３２
のみとなり、第８図従来例の様な連結梁３３が無くなっ
た為に、製造プロセスの歩留が大幅に向上する。As a result, (1) the shape of the vibrator main body 30 is the shape of two vibrators 31°32
Since the connecting beam 33 as in the conventional example shown in FIG. 8 is eliminated, the yield of the manufacturing process is greatly improved.
（２）励振電流を流す第１振動子３１と、起電力検出用
の第２振動子３２は電気的に完全に、絶縁されているた
め、高い入力成分除去比（Ｓ／Ｎ比）か得られる。(2) Since the first oscillator 31 that flows the excitation current and the second oscillator 32 that detects the electromotive force are completely electrically isolated, a high input component rejection ratio (S/N ratio) can be achieved. It will be done.
（３）振動子本体３０に、振動子３１．３２の軸に直角
方向に、第４図に示すごとき、歪みε。が加わると、従
来例の振動子本体・３０では、連結梁３３のなめに、第
４図（Ａ）の破線の様な変形を生じ、第１ｆｉ＋動子３
１．第２振動子３２の固有振動数が変化するという問題
があった。(3) Strain ε in the vibrator main body 30 in a direction perpendicular to the axis of the vibrator 31, 32 as shown in FIG. When this happens, in the vibrator main body 30 of the conventional example, deformation occurs in the connecting beam 33 as shown by the broken line in FIG.
1. There was a problem in that the natural frequency of the second vibrator 32 changed.
しかし、本発明では、第４図（Ｂ）の破線の様な変形を
生じ、誤差を生じない。However, in the present invention, deformation as shown by the broken line in FIG. 4(B) occurs and no error occurs.
〈発明の効果〉
以上説明したように、本発明は、シリコン単結晶の基板
上に設けられたシリコン単結晶材よりなる振動子本体と
、該振動子本体を励振する励振手段と、前記振動子本体
の励振された振動を検出する振動検出手段とを具備する
メカニカルフィルタにおいて、
両端が前記基板に固定され互いに平行に配置され長さと
幅と厚さがほぼ等しい第１振動子と第２振動子とを備え
る振動子本体と、該振動子本体に直交するＦｌ’ｌ流磁
界流加界第１振動子の両端に交流電流を流して磁気誘導
作用により振動子を磁界と電流に直交する方向に励振す
る励振手段と、前記第２振動子の両端に発生する起電力
を検出する振動検出手段とを具（＋ｔｔｉ してなるメ
カニカルフィルタを構成した。<Effects of the Invention> As explained above, the present invention provides a vibrator body made of a silicon single crystal material provided on a silicon single crystal substrate, an excitation means for exciting the vibrator body, and the vibrator body. A mechanical filter comprising vibration detection means for detecting excited vibrations of the main body, the first and second vibrators having both ends fixed to the substrate, arranged parallel to each other, and having substantially equal length, width, and thickness. An alternating current is passed through both ends of the first vibrator, which is fed with a Fl'l flow magnetic field orthogonal to the vibrator body, and the vibrator is moved in a direction perpendicular to the magnetic field and the current by magnetic induction. A mechanical filter was constructed by including an excitation means for exciting and a vibration detection means for detecting the electromotive force generated at both ends of the second vibrator.
この結果、
（１）振動子本体の形状が２木の振動子のみとなり、従
来例の様な連結梁が無くなった為に、製造プロセスの歩
留が大幅に向上する。As a result, (1) The shape of the vibrator body is reduced to a two-wood vibrator, and the connecting beams as in the conventional example are eliminated, so the yield of the manufacturing process is greatly improved.
（２）励ｒ２電流を流す第１振動子と、起電力検出用の
第２振動子は電気的に完全に、絶縁されているため、高
い入力成分除去比（Ｓ／Ｎ比）が得られる。(2) Since the first oscillator that flows the excitation r2 current and the second oscillator that detects the electromotive force are completely electrically isolated, a high input component rejection ratio (S/N ratio) can be obtained. .
＜３）！動子本体に、振動子の軸に直角方向に、歪みが
加わると、従来例の振動子本体では、連結梁の存在のな
めに、第１振動子、第２ ＪＭ動子の固有振動数が変化
するという問題があったが、本発明では、誤差を生じな
い。<3)! When strain is applied to the movable element body in a direction perpendicular to the axis of the vibrator, in the conventional vibrator body, the natural frequencies of the first and second JM vibrators will change due to the presence of the connecting beam. However, in the present invention, there is no error.
従って、本発明によれば、Ｓ／Ｎ比が良好で安定な出力
信号が得られ、安価なメカニカルフィルターを実現する
ことが出来る。Therefore, according to the present invention, a stable output signal with a good S/N ratio can be obtained, and an inexpensive mechanical filter can be realized.
第１し１は本発明の一実施例の原理的要部構成説明図、
第２図は実際使用例の要部構成説明図で、第３図は第２
図のＢ−Ｂ断面図、第４図は第１図の動作説明図、第５
図〜第７図は従来より一般に使用されている従来例の構
成説明図で、第５図は要部構成説明図、第６図は第５図
のＡ−Ａ断面図、第７図は第５図を電気回路で示した図
、第８図〜第１】図は特願昭６２−２７１５５７号の構
成説明図である。
１１・・・基板、１３・・・磁石、３０・・・振動子本
体、３１・・・第１ｆＡ動子、３２・・・第２振動子、
４０・・・励振手段、１１１・・・入カドランス、４２
・・・入力端子、５０・・・振動検出手段、５１・・・
出カドランス、５２・・・増幅器、５３・・・出力端子
、６０・・・シェル、６１・・・真空室、６２・・・隙
間。
第５図
第６図
０冒
第
ス
； ９ 四
第
図The first diagram is an explanatory diagram of the basic configuration of an embodiment of the present invention,
Figure 2 is an explanatory diagram of the main part configuration of an actual usage example, and Figure 3 is an explanatory diagram of the main part configuration of an actual usage example.
BB sectional view in the figure, Figure 4 is an explanatory diagram of the operation of Figure 1, Figure 5 is
Figures to Figures 7 are explanatory diagrams of the configuration of a conventional example that has been commonly used in the past. Figure 5 is an explanatory diagram of the main part configuration. 5 is a diagram showing an electric circuit, and FIGS. 8 to 1] are explanatory diagrams of the structure of Japanese Patent Application No. 62-271557. DESCRIPTION OF SYMBOLS 11... Substrate, 13... Magnet, 30... Vibrator body, 31... First fA actuator, 32... Second vibrator,
40... Excitation means, 111... Input cadence, 42
...Input terminal, 50...Vibration detection means, 51...
Output transformer, 52...Amplifier, 53...Output terminal, 60...Shell, 61...Vacuum chamber, 62...Gap. Figure 5 Figure 6 Figure 0 beginning; 9 Figure 4
Claims (1)
材よりなる振動子本体と、該振動子本体を励振する励振
手段と、前記振動子本体の励振された振動を検出する振
動検出手段とを具備するメカニカルフィルターにおいて
、 両端が前記基板に固定され互いに平行に配置され長さと
幅と厚さがほぼ等しい第１振動子と第２振動子とを備え
る振動子本体と、該振動子本体に直交する直流磁界を加
え第１振動子の両端に交流電流を流して磁気誘導作用に
より振動子を磁界と電流に直交する方向に励振する励振
手段と、第２振動子の両端に発生する起電力を検出する
振動検出手段とを具備してなるメカニカルフィルター。[Scope of Claims] A vibrator body made of a silicon single crystal material provided on a silicon single crystal substrate, an excitation means for exciting the vibrator body, and detecting the excited vibration of the vibrator body. A mechanical filter comprising a vibration detecting means, comprising: a vibrator main body comprising a first vibrator and a second vibrator having both ends fixed to the substrate and arranged parallel to each other and having substantially equal length, width, and thickness; an excitation means for applying a DC magnetic field perpendicular to the vibrator body and flowing an alternating current to both ends of the first vibrator to excite the vibrator in a direction perpendicular to the magnetic field and the current by magnetic induction; A mechanical filter comprising vibration detection means for detecting electromotive force generated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63204442A JP2513280B2 (en) | 1988-08-17 | 1988-08-17 | Mechanical filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63204442A JP2513280B2 (en) | 1988-08-17 | 1988-08-17 | Mechanical filter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0252514A true JPH0252514A (en) | 1990-02-22 |
| JP2513280B2 JP2513280B2 (en) | 1996-07-03 |
Family
ID=16490595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63204442A Expired - Lifetime JP2513280B2 (en) | 1988-08-17 | 1988-08-17 | Mechanical filter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2513280B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005050839A1 (en) * | 2003-11-19 | 2005-06-02 | Matsushita Electric Industrial Co., Ltd. | Electromechanical filter |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5564417A (en) * | 1978-11-10 | 1980-05-15 | Seiko Instr & Electronics Ltd | Mechanical filter |
| JPS6150331U (en) * | 1984-09-05 | 1986-04-04 |
-
1988
- 1988-08-17 JP JP63204442A patent/JP2513280B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5564417A (en) * | 1978-11-10 | 1980-05-15 | Seiko Instr & Electronics Ltd | Mechanical filter |
| JPS6150331U (en) * | 1984-09-05 | 1986-04-04 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005050839A1 (en) * | 2003-11-19 | 2005-06-02 | Matsushita Electric Industrial Co., Ltd. | Electromechanical filter |
| JP2005176318A (en) * | 2003-11-19 | 2005-06-30 | Matsushita Electric Ind Co Ltd | Electric machine filter |
| US7397326B2 (en) * | 2003-11-19 | 2008-07-08 | Matsushita Electric Industrial Co., Ltd. | Electromechanical filter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2513280B2 (en) | 1996-07-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07104217B2 (en) | Vibration transducer and manufacturing method thereof | |
| US5009108A (en) | Vibrating type transducer | |
| JP2005037309A (en) | Vibration-type transducer | |
| JPH0252514A (en) | Mechanical filter | |
| JPH0238934A (en) | Vibration type semiconductor transducer | |
| JPH0756466B2 (en) | Vibration type semiconductor transducer | |
| JPH07101749B2 (en) | Vibratory Transducer Manufacturing Method | |
| JPH04297838A (en) | Vibration-type semiconductor transducer | |
| JPH01145539A (en) | Vibration type semiconductor temperature sensor | |
| JP2822598B2 (en) | Vibration type transducer | |
| JPH02232538A (en) | Vibration type semiconductor transducer | |
| JP2822594B2 (en) | Vibration type transducer | |
| JPH07101748B2 (en) | Vibratory Transducer Manufacturing Method | |
| JP2687676B2 (en) | Vibration type transducer | |
| JPH0467899B2 (en) | ||
| JPH07101750B2 (en) | Vibratory Transducer Manufacturing Method | |
| JPH0628320B2 (en) | Vibration transducer manufacturing method | |
| JPH0786443B2 (en) | Vibratory Transducer Manufacturing Method | |
| JPH02232539A (en) | Vibration type semiconductor transducer | |
| JPH05248973A (en) | Vibration type transducer and manufacture of the same | |
| JP2822596B2 (en) | Vibration type transducer | |
| JPH0769236B2 (en) | Vibratory Transducer Manufacturing Method | |
| JP2679349B2 (en) | Vibration type semiconductor transducer | |
| JPH0519089B2 (en) | ||
| JPH01114111A (en) | Mechanical filter |