JPH0249410A - Strontium titanate semiconductor porcelain capacitor - Google Patents
Strontium titanate semiconductor porcelain capacitorInfo
- Publication number
- JPH0249410A JPH0249410A JP19884788A JP19884788A JPH0249410A JP H0249410 A JPH0249410 A JP H0249410A JP 19884788 A JP19884788 A JP 19884788A JP 19884788 A JP19884788 A JP 19884788A JP H0249410 A JPH0249410 A JP H0249410A
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- boron alloy
- strontium titanate
- tungsten
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 239000003990 capacitor Substances 0.000 title abstract description 8
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 7
- 229910000521 B alloy Inorganic materials 0.000 claims abstract description 25
- VNSXJXAATIBOBP-UHFFFAOYSA-N [Sn].[B].[Ni] Chemical compound [Sn].[B].[Ni] VNSXJXAATIBOBP-UHFFFAOYSA-N 0.000 claims abstract description 12
- IGLTYURFTAWDMX-UHFFFAOYSA-N boranylidynetungsten nickel Chemical compound [Ni].B#[W] IGLTYURFTAWDMX-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003985 ceramic capacitor Substances 0.000 claims description 14
- 238000010405 reoxidation reaction Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 abstract description 13
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 9
- 239000000174 gluconic acid Substances 0.000 abstract description 7
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- 239000003638 chemical reducing agent Substances 0.000 abstract description 4
- 150000002815 nickel Chemical class 0.000 abstract description 4
- 239000012279 sodium borohydride Substances 0.000 abstract description 4
- 229910000033 sodium borohydride Inorganic materials 0.000 abstract description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010937 tungsten Substances 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は無電解メッキ電極を有する還元再酸化型又は粒
界絶縁型チタン酸ストロンチウム系半導体磁器コンデン
サに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a reduction and reoxidation type or grain boundary insulated strontium titanate semiconductor ceramic capacitor having an electroless plated electrode.
（従来の技術）
従来より半導体磁器コンデンサの電極には、銀が専ら用
いられてきたが、銀が非オーム性を示すため半導体磁器
との間に新たな直列の容量を発生し、この直列容量によ
り、半導体磁器コンデンサとしての全体の容量を減少す
るという問題点かあった。この問題点を解決するにあた
って、特開昭５３−９６４６３号公報によれば、チタン
酸ストロンチウム系半導体磁器の表面に、オーム性接触
をする無電解ニッケルメッキ電極を対向させて付与し熱
処理を行うことが記載されている。(Prior art) Silver has traditionally been used exclusively for the electrodes of semiconductor ceramic capacitors, but since silver exhibits non-ohmic properties, a new series capacitance is generated between the semiconductor ceramic capacitor and this series capacitance. Therefore, there was a problem in that the overall capacitance of the semiconductor ceramic capacitor was reduced. In order to solve this problem, according to Japanese Patent Application Laid-open No. 53-96463, electroless nickel plated electrodes that make ohmic contact are applied to the surface of strontium titanate-based semiconductor porcelain so as to face each other, and then heat treatment is performed. is listed.
（発明が解決しようとする課題）
しかし、これらの半導体磁器の表面に無電解ニッケル電
極を有するコンデンサは、熱処理のために表面に酸化し
たニッケル層が形成されるために、リード線を直接半田
付けして接続させる場合、半田付は性の低下を来すこと
があった。このために、あらかじめニッケル電極上に銀
電極を重層付与する必要があり、製造工程が増えること
及び銀を使用するために、製造原価が高くなるという問
題点が生じた。(Problem to be solved by the invention) However, in capacitors having electroless nickel electrodes on the surface of these semiconductor ceramics, an oxidized nickel layer is formed on the surface due to heat treatment, so lead wires cannot be directly soldered. If the connection is made by using the soldering method, the soldering performance may deteriorate. For this reason, it is necessary to layer a silver electrode on a nickel electrode in advance, which increases the number of manufacturing steps and increases the manufacturing cost due to the use of silver.
一方、ニッケルの酸化を防止して半田付は性を改良した
ニッケル・ボロン合金メッキが開発され、特開昭６３−
６０５０１号公報にチタン酸バリウム系半導体磁器より
なるサーミスタへの適用が開示されている。しかしなが
ら、このニッケル・ボロン合金無電解メッキ電極メッキ
にしても、メッキ後に２００″Ｃ以上の熱処理をしなけ
れば、半導体磁器素体とメッキとの経時安定性を保持す
ることが出来ないという問題点をもっている。即ち、従
来の無電解メッキ法で半導体磁器素体に安定した電極を
形成するには、熱処理工程が不可欠で、そのための製造
設備、エネルギー、工数が、コストの増加及び歩留りの
低下を来していた。On the other hand, a nickel-boron alloy plating was developed that prevented the oxidation of nickel and improved solderability.
60501 discloses application to a thermistor made of barium titanate semiconductor ceramic. However, even with this nickel-boron alloy electroless plating electrode plating, there is a problem that the stability of the semiconductor porcelain body and the plating over time cannot be maintained unless heat treatment is performed at 200"C or higher after plating. In other words, in order to form stable electrodes on semiconductor porcelain bodies using the conventional electroless plating method, a heat treatment process is essential, and the manufacturing equipment, energy, and man-hours required for this process increase costs and reduce yield. It was coming.
本発明は、熱処理工程を経なくてもコンデンサの諸性能
が従来法と同等以上の無電解メッキ電橋を有する還元再
酸化型又は粒界絶縁型チタン酸ストロンチウム系半導体
磁器コンデンサを得ることを目的とするものである。The object of the present invention is to obtain a reduction-reoxidation type or grain boundary insulated strontium titanate semiconductor ceramic capacitor having an electroless plated bridge that has capacitor performance equivalent to or higher than conventional methods without going through a heat treatment process. That is.
（課題を解決するための手段）
本発明は、ニッケル・スズ・ボロン合金又はニッケル・
タングステン・ボロン合金の無電解メッキ電極を対向付
与させた還元再酸化型又は粒界絶縁型チタン酸ストロン
チウム系半導体磁器からなるコンデンサで、メッキ後の
熱処理が不要となるという極めて優れた効果を有するも
のである。本発明により、電極とリード線の半田付けが
容易でかつその経時安定性にも優れ、又従来の無電解ニ
ッケルメッキに優るとも劣らない電気特性を有し、さら
に製造工程において占める割合の大きな熱処理工程を省
略可能にしたコンデンサを提供することが出来るように
なった。(Means for solving the problem) The present invention provides a nickel-tin-boron alloy or a nickel-tin-boron alloy.
A capacitor made of reduction/reoxidation type or grain boundary insulated strontium titanate semiconductor porcelain with opposing electroless plated electrodes of tungsten/boron alloy, which has the extremely excellent effect of eliminating the need for heat treatment after plating. It is. The present invention enables easy soldering of electrodes and lead wires, has excellent stability over time, and has electrical properties that are comparable to those of conventional electroless nickel plating. It is now possible to provide a capacitor that allows the process to be omitted.
本発明で使用するニッケル・スズ・ボロン合金メッキは
、ニッケル塩、ホウ水素化ナトリウムまたはジメチルア
ミンボランを含む水溶液に、還元剤としてスズ酸−グル
コン酸錯体を添加したものであり、還元再酸化型又は粒
界絶縁型チタン酸ストロンチウム系半導体磁器コンデン
サ素体の表面にニッケル・スズ・ボロンの三成分の合金
を析出する。The nickel-tin-boron alloy plating used in the present invention is made by adding a stannic acid-gluconic acid complex as a reducing agent to an aqueous solution containing nickel salt, sodium borohydride, or dimethylamine borane, and is a reduction-reoxidation type. Alternatively, a three-component alloy of nickel, tin, and boron is deposited on the surface of a grain-boundary insulated strontium titanate semiconductor ceramic capacitor element.
また、本発明で使用するニッケル・タングステン・ボロ
ン合金メッキは、ニッケル塩、ホウ水素化ナトリウムま
たはジメチルアミンボランを含む水溶液に、還元剤とし
てタングステン酸−グルコン酸錯体を添加したものであ
り、還元再酸化型又は粒界絶縁型チタン酸ストロンチウ
ム系半導体磁器コンデンサ素体の表面にニッケル・タン
グステン・ボロンの三成分の合金を析出する。これらの
合金の成分、析出量により、還元再酸化型又は粒界絶縁
型チタン酸ストロンチウム系半導体磁器コンデンサ素体
との密着性及びそれと関連する電気特性、さらに半田付
は性が影響を受ける。In addition, the nickel-tungsten-boron alloy plating used in the present invention is made by adding a tungstic acid-gluconic acid complex as a reducing agent to an aqueous solution containing nickel salt, sodium borohydride, or dimethylamine borane. A three-component alloy of nickel, tungsten, and boron is deposited on the surface of an oxidized or grain-boundary insulated strontium titanate semiconductor ceramic capacitor element. The components and amount of precipitation of these alloys affect the adhesion to the reduction-reoxidation type or grain boundary insulation type strontium titanate semiconductor ceramic capacitor body, the electrical properties related thereto, and the solderability.
（発明の効果）
以上のように、本発明の粒界に誘電体層を有するチタン
酸ストロンチウム系半導体磁器コンデンサは、表面にニ
ッケル・スズ・ボロン又はニッケル・タングステン・ボ
ロン合金メッキを対向付与してなることを特徴としてい
るために、メッキ析出後の熱処理が必要無くなり、製造
面において極めて優れている。又熱処理が必要な従来の
無電解ニッケル・ボロン合金メッキ法によるものと比較
して優るとも劣らない電気特性を存し、かつ電気特性と
半田付は性の経時安定性にも優れたものである。(Effects of the Invention) As described above, the strontium titanate semiconductor ceramic capacitor of the present invention having a dielectric layer at the grain boundary is provided with nickel-tin-boron or nickel-tungsten-boron alloy plating on the surface. Because of this feature, there is no need for heat treatment after plating deposition, which is extremely superior in terms of manufacturing. In addition, it has electrical properties that are comparable to those made using the conventional electroless nickel-boron alloy plating method that requires heat treatment, and it also has excellent electrical properties and solderability over time. .
（実施例） 次に実施例によって本発明をさらに具体的に説明する。(Example) Next, the present invention will be explained in more detail with reference to Examples.
５ｒＴｉ（ｈ １００モル、Ｔｉｅ、 １モル、Ｎｂｚ
Ｏｓ ０．１モル、ＭｎＯ□１モルからなる粉を、ポ
リビニールアルコール水溶液を加えて造粒し、１．Ｏｔ
／ｃｍ”の加圧で乾式プレスにより直径１０＋ｎｍφ、
厚さ０．５ ｍｍの円板状に成形した。この成形体を１
１１０°Ｃの温度で２時間焼成した後、水素１５容量％
、窒素８５容量％からなる還元性雰囲気で１４００°Ｃ
の温度で２時間熱処理して、半導体磁器を得た。次に大
気中でＢｉｚｆｈとＣｕＯからなるペーストを塗布した
後に、８００〜１２００°Ｃで２時間熱処理することに
より粒界に誘電体層を有するチタン酸ストロンチウム系
半導体磁器コンデンサ素体を製造した。次にこの半導体
磁器コンデンサ素体をフッ化水素酸と硝酸の混合水溶液
により表面エツチングし、超音波洗浄した後、塩酸酸性
第一スズ溶液からなるエンプレートセンシタイザ−４３
２（メルラックス（株）の商品名）に浸漬して撹拌し、
取り出して水洗する。5rTi (h 100 mol, Tie, 1 mol, Nbz
A powder consisting of 0.1 mol of Os and 1 mol of MnO□ was granulated by adding an aqueous polyvinyl alcohol solution, and 1. Ot
diameter 10+nmφ by dry pressing with pressure of /cm"
It was molded into a disk shape with a thickness of 0.5 mm. This molded body is 1
After calcination for 2 hours at a temperature of 110°C, 15% by volume of hydrogen
, 1400°C in a reducing atmosphere consisting of 85% nitrogen by volume.
A semiconductor ceramic was obtained by heat treatment at a temperature of 2 hours. Next, a paste consisting of Bizfh and CuO was applied in the atmosphere and then heat treated at 800 to 1200°C for 2 hours to produce a strontium titanate semiconductor ceramic capacitor body having a dielectric layer at the grain boundaries. Next, the surface of this semiconductor ceramic capacitor body was etched with a mixed aqueous solution of hydrofluoric acid and nitric acid, and after ultrasonically cleaning, an emplate sensitizer 43 made of an acidic stannous solution of hydrochloric acid was used.
2 (trade name of Merlux Co., Ltd.) and stirred,
Take it out and wash it with water.
次に、塩化パラジウム、水溶液からなるエンプレードア
クチベータ４４０（メルラックス（株）の商品名）に浸
漬撹拌した後、水洗する。次に無電解メッキ液であるエ
ンプレートＮｉ ４２７（メルラックス（株）の商品名
）の１００ｇ＃！に対して、５ｇ＃！のスズ酸−グルコ
ン酸錯体又はタングステン酸−グルコン酸錯体を混合し
た７０°Ｃの溶液に３０分間浸漬撹拌することにより、
半導体磁器コデンサ素体の全面にニッケル・スズ・ボロ
ン合金又はニッケル・タングステン・ボロン合金を析出
させた。分析の結果、ニッケル・スズ・ボロンの重量比
率は８８／９／１２、ニッケル・タングステン・ボロン
の重量比率は８７／１０／３であった。次に、これらの
円盤の周側面のニッケル・スズ・ボロン合金又はニッケ
ル・タングステン・ボロン合金を研磨して除去し、粒界
に誘電体層を有するチタン酸ストロンチウム系半導体磁
器コンデンサを得た。Next, it is immersed and stirred in Emplaid Activator 440 (trade name of Merlux Co., Ltd.) consisting of an aqueous solution of palladium chloride, and then washed with water. Next, 100g of electroless plating solution Enplate Ni 427 (trade name of Merlux Co., Ltd.)! Against 5g#! By immersing and stirring for 30 minutes in a 70°C solution containing a mixture of stannic acid-gluconic acid complex or tungstic acid-gluconic acid complex,
A nickel-tin-boron alloy or a nickel-tungsten-boron alloy was deposited on the entire surface of a semiconductor ceramic codenser body. As a result of the analysis, the weight ratio of nickel, tin, and boron was 88/9/12, and the weight ratio of nickel, tungsten, and boron was 87/10/3. Next, the nickel-tin-boron alloy or the nickel-tungsten-boron alloy on the peripheral surfaces of these disks was removed by polishing to obtain a strontium titanate-based semiconductor ceramic capacitor having a dielectric layer at the grain boundaries.
又、比較例は、本発明と同一の方法によって得られた半
導体磁器素体に、無電解メッキ液にスズ酸−グルコン酸
錯体又はタングステン酸−グルコン酸錯体を混合しない
ことが実施例と違うだけで、残りの作業方法は、全て実
施例と同一の方法により、粒界に誘電体層を有するチタ
ン酸ストロンチウム系半導体磁器コンデンサ素体の全面
にニッケル・スズ・ボロン合金を析出させ、次に２００
°Ｃで１時間熱処理し、最後に周側面のニッケル・スズ
・ボロン合金を研磨して除去したものを用いた。In addition, the comparative example differs from the example in that the semiconductor ceramic body obtained by the same method as the present invention is not mixed with the stannic acid-gluconic acid complex or the tungstic acid-gluconic acid complex in the electroless plating solution. The rest of the work was carried out in the same manner as in the example, in which a nickel-tin-boron alloy was deposited on the entire surface of a strontium titanate semiconductor ceramic capacitor body having a dielectric layer at the grain boundaries, and then 200%
It was heat treated at °C for 1 hour, and the nickel-tin-boron alloy on the peripheral side was finally removed by polishing.
表中の測定値は、いずれも試料３０個の平均値である。All measured values in the table are average values of 30 samples.
第１表から明らかなように、本発明のものでは、従来の
ものと変わらない電気特性及び半田付は性を有しながら
、かつそれらの経時安定性も優れていることが判明した
。As is clear from Table 1, it was found that the products of the present invention had the same electrical properties and soldering properties as the conventional products, and were also superior in their stability over time.
Claims (1)
ステン・ボロン合金の無電解メッキ電極を有することを
特徴とする還元再酸化型又は粒界絶縁型チタン酸ストロ
ンチウム系半導体磁器コンデンサ。1. A reduction and reoxidation type or grain boundary insulated strontium titanate semiconductor ceramic capacitor characterized by having an electroless plated electrode of a nickel-tin-boron alloy or a nickel-tungsten-boron alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19884788A JPH0249410A (en) | 1988-08-11 | 1988-08-11 | Strontium titanate semiconductor porcelain capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19884788A JPH0249410A (en) | 1988-08-11 | 1988-08-11 | Strontium titanate semiconductor porcelain capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0249410A true JPH0249410A (en) | 1990-02-19 |
Family
ID=16397899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19884788A Pending JPH0249410A (en) | 1988-08-11 | 1988-08-11 | Strontium titanate semiconductor porcelain capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0249410A (en) |
-
1988
- 1988-08-11 JP JP19884788A patent/JPH0249410A/en active Pending
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