JPH0245990A - Semiconductor laser protector - Google Patents
Semiconductor laser protectorInfo
- Publication number
- JPH0245990A JPH0245990A JP63196869A JP19686988A JPH0245990A JP H0245990 A JPH0245990 A JP H0245990A JP 63196869 A JP63196869 A JP 63196869A JP 19686988 A JP19686988 A JP 19686988A JP H0245990 A JPH0245990 A JP H0245990A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- current
- chip
- breakdown
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 230000001012 protector Effects 0.000 title 1
- 239000002887 superconductor Substances 0.000 claims abstract description 16
- 230000015556 catabolic process Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 abstract description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
Landscapes
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分腎〕
この発明は、半導体し・−ザの電気的な破壊を防ぐため
の保護回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Applications] The present invention relates to a protection circuit for preventing electrical breakdown of a semiconductor device.
第２図は、例えば従来の半導体レーザ保護装置を示す回
路図である。この図において、２１は半導体レーザ、２
２はこの半導体Ｌ・−ザ２１を駆動するレーザ駆動電源
、２３は前記半導体レーザ２１を制御する制御用トラン
ジスタ、２４は前記半導体レーザ２１に一定電圧を印加
するためのツェナーダイオード、２５．２６．２７は抵
抗体、２８はダイオード、２９はレーザ電流制御用の可
変抵抗体である。FIG. 2 is a circuit diagram showing, for example, a conventional semiconductor laser protection device. In this figure, 21 is a semiconductor laser;
2 is a laser driving power source for driving this semiconductor laser 21; 23 is a control transistor for controlling the semiconductor laser 21; 24 is a Zener diode for applying a constant voltage to the semiconductor laser 21; 25.26. 27 is a resistor, 28 is a diode, and 29 is a variable resistor for laser current control.
次に動作について説明する。Next, the operation will be explained.
半導体レーザ２１の通常の駆動時は、可変抵抗体２９を
調節することにより点Ａの電圧を変化させ、制御用ｌ・
ランジスタ２３のコレクタ電流を変化させて半導体レー
ザ２１の電流値を制御する。During normal driving of the semiconductor laser 21, the voltage at point A is changed by adjusting the variable resistor 29, and the control l.
The current value of the semiconductor laser 21 is controlled by changing the collector current of the transistor 23.
温度に対する保護に関しては、ダイオード２８がその役
割を果す。すなわち、ダイオード２８は半導体レーザ２
１に接して取り付けられており、半導体レーザ２１の、
温度が高くなるとダイオード２８の抵抗値は低くなり、
点Ａの電圧が下がって半導体レーザ２１の電流を低く抑
えるようになっている。As regards protection against temperature, the diode 28 serves this purpose. That is, the diode 28 is connected to the semiconductor laser 2
1 and is attached in contact with the semiconductor laser 21.
As the temperature increases, the resistance value of the diode 28 decreases,
The voltage at point A is lowered to keep the current of the semiconductor laser 21 low.
また、電流に対する保護に関しては、ツェナーダイオー
ド２４がその役割を果す。すなわち、半導体レーザ２１
の電流を上昇させるために可変抵抗体２９の値を変えて
点Ａの電圧を変化させても、ツェナーダイオード２４で
決まる電圧以上にはならない。従って、半導体レーザ２
１の電流もある値以上にはならないようになっている。Furthermore, regarding protection against current, the Zener diode 24 plays that role. That is, the semiconductor laser 21
Even if the voltage at point A is changed by changing the value of the variable resistor 29 in order to increase the current, the voltage at point A will not exceed the voltage determined by the Zener diode 24. Therefore, the semiconductor laser 2
1's current also does not exceed a certain value.
従来の半導体レーザ保護装置は以上のように構成されて
いるので、部品点数も多く製作が面倒であり、かつ高価
であるなどの問題点があった。Since the conventional semiconductor laser protection device is constructed as described above, it has problems such as having a large number of parts, being cumbersome to manufacture, and being expensive.
この発明は、上記のような問題点を解消するためになさ
れたもので、部品点数が少なく製作が容易であるととも
に、廉価な半導体レーザ保調装置を１与ることを目的と
する。The present invention has been made to solve the above-mentioned problems, and aims to provide a semiconductor laser conditioning device that has a small number of parts, is easy to manufacture, and is inexpensive.
この発明に係る半導体レーザ保護装置は、半導体レーザ
チップの電極またはこの電極と接続されて電流を供給す
るためのワイヤの少なくとも一方を超電導体で構成し、
その臨界温度を半導体チップの破壊温度より低く、かつ
臨界電流を半導体チップの破壊電極以下に選定したもの
である。In the semiconductor laser protection device according to the present invention, at least one of the electrode of the semiconductor laser chip or the wire connected to the electrode for supplying current is made of a superconductor,
The critical temperature is selected to be lower than the breakdown temperature of the semiconductor chip, and the critical current is selected to be lower than the breakdown electrode of the semiconductor chip.
この発明においては、熱的影響を受け、かつ電流が供給
される媒体に超電導体を用いたことから、臨界電流を越
えたり、臨界温度を越えたりすると、超電導が壊れ、電
気抵抗が急激に増して半導体レーザを保護する。In this invention, since a superconductor is used as a medium that is affected by heat and is supplied with current, when the critical current or temperature is exceeded, the superconductor breaks down and the electrical resistance rapidly increases. to protect the semiconductor laser.
以下、この発明の一実施例を第１図について説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図において、１１は半導体レーザのステム、１２は
半導体レーザチップ、１３は超電導体からなるワイヤで
ある。In FIG. 1, 11 is a stem of a semiconductor laser, 12 is a semiconductor laser chip, and 13 is a wire made of a superconductor.
超電導体からなるワイヤ１３は、臨界温度が半導体レー
ザチップイ２の破壊温度より低い材質で、かつ臨界電流
は半導体し・−ザチップ１２の破壊電流より小さくなる
ような電流通過の断面積となる太さに選んである。The wire 13 made of a superconductor is made of a material whose critical temperature is lower than the breakdown temperature of the semiconductor laser chip 2, and whose cross-sectional area is such that the critical current is smaller than the breakdown current of the semiconductor laser chip 12. I have chosen it.
このような半導体レーザにおいて、もし半導体レーザチ
ップ１２に超電導体からなるワイヤ１３の臨界電流を越
えるような電流が流れようとすると、超電導体からなる
ワイヤ１３の８Ｉ電導が壊れて常電導となり、電気抵抗
が急激に増して流れる電流を制限し、半導体レーザチッ
プ１２を破壊から保護する。In such a semiconductor laser, if a current exceeding the critical current of the wire 13 made of a superconductor is allowed to flow through the semiconductor laser chip 12, the 8I conductivity of the wire 13 made of a superconductor is broken and becomes normal conduction, causing the electric current to flow through the semiconductor laser chip 12. The resistance increases rapidly to limit the flowing current and protect the semiconductor laser chip 12 from destruction.
また、半導体レーザチップ１２の温度が上昇して超電導
体からなるワイヤ１３の臨界温度を越えても、超電導が
壊れて電気抵抗が急激に増し半導体レーザチップ１２を
破壊から保護する。Further, even if the temperature of the semiconductor laser chip 12 rises and exceeds the critical temperature of the wire 13 made of a superconductor, the superconductor is broken and the electrical resistance increases rapidly to protect the semiconductor laser chip 12 from destruction.
なお、上記実施例ではワイヤ１３を超電導体にしたが、
半導体レーザチップ１２の電極を超電導体にしてもよい
。In addition, in the above embodiment, the wire 13 was made of a superconductor, but
The electrodes of the semiconductor laser chip 12 may be made of a superconductor.
以上説明したようにこの発明は、半導体Ｌ・−ザチップ
の電極またはこの電極と接続される電流を供給するため
のワイヤの少なくとも一方を超電導体で構成し、その臨
界温度を半導体チップの破壊温度より低く、かつ臨界電
流を半導体チップの破壊電極以下に選定したので、電流
および温度に対する保護回路が信頼性高く得られ、かつ
安価に構成できる効果がある。As explained above, the present invention consists of at least one of the electrodes of the semiconductor L-the chip or the wires connected to these electrodes for supplying current made of a superconductor, and whose critical temperature is lower than the breakdown temperature of the semiconductor chip. Since the critical current is selected to be low and below the breakdown electrode of the semiconductor chip, a protection circuit against current and temperature can be obtained with high reliability and can be constructed at low cost.
第１図はこの発明の一実施例による半導体レーザ保護装
置の概略を示す側面図、第２図は従来の半導体レーザ保
護装置を示す回路図である。
図において、１１はステム、１２は半導体レーザチップ
、１３ば超電導体からなるワイヤである。
代理人 大 岩 増 雄 （外２名）第
図
１、事件の表示
特願昭６３−１９６８６９号
２、発明の名称
半導体レーザ保護装置
３、補正をする者
代表者
岐
守
哉
４、代
理
人
第
図
５、補正の対象
明細書の発明の詳細な説明の欄
６、補正の内容
明細書の第２頁３行の１一定電圧を印加するため」を、
「一定電流を流すため」と補正する。
以 上FIG. 1 is a side view schematically showing a semiconductor laser protection device according to an embodiment of the present invention, and FIG. 2 is a circuit diagram showing a conventional semiconductor laser protection device. In the figure, 11 is a stem, 12 is a semiconductor laser chip, and 13 is a wire made of a superconductor. Agent: Masuo Oiwa (2 others) Figure 1, Indication of the incident, Patent Application No. 1986-196869, 2, Name of the invention: Semiconductor laser protection device 3, Person making the amendment, Representative: Kimoriya 4, Agent No. Figure 5, Column 6 of Detailed Description of the Invention in the Specification Subject to Amendment, page 2, line 3 of the Specification of Contents of Amendment, 1 “For applying a constant voltage”
Correct it to "to flow a constant current."that's all
Claims (1)
レーザの保護装置であって、前記半導体レーザチップの
電極またはこの電極と接続され、電流を供給するための
ワイヤの少なくとも一方を超電導体で構成し、その臨界
温度を前記半導体チップの破壊温度より低く、かつ臨界
電流を前記半導体チップの破壊電極以下に選定したこと
を特徴とする半導体レーザ保護装置。A protection device for a semiconductor laser that operates when a current is supplied to the semiconductor laser chip, wherein at least one of an electrode of the semiconductor laser chip or a wire connected to the electrode for supplying current is made of a superconductor, A semiconductor laser protection device characterized in that the critical temperature is selected to be lower than the breakdown temperature of the semiconductor chip, and the critical current is selected to be lower than the breakdown electrode of the semiconductor chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63196869A JPH0245990A (en) | 1988-08-06 | 1988-08-06 | Semiconductor laser protector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63196869A JPH0245990A (en) | 1988-08-06 | 1988-08-06 | Semiconductor laser protector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0245990A true JPH0245990A (en) | 1990-02-15 |
Family
ID=16365001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63196869A Pending JPH0245990A (en) | 1988-08-06 | 1988-08-06 | Semiconductor laser protector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0245990A (en) |
-
1988
- 1988-08-06 JP JP63196869A patent/JPH0245990A/en active Pending
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